CN105983898A - Grinding method for oxide layer on surface of wafer - Google Patents
Grinding method for oxide layer on surface of wafer Download PDFInfo
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- CN105983898A CN105983898A CN201510080427.1A CN201510080427A CN105983898A CN 105983898 A CN105983898 A CN 105983898A CN 201510080427 A CN201510080427 A CN 201510080427A CN 105983898 A CN105983898 A CN 105983898A
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- grinding
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Abstract
The invention provides a grinding method for an oxide layer on the surface of a wafer. The wafer with the oxide layer formed on the surface is arranged on a grinding head; certain pressure is applied to the grinding head to enable the surface of the wafer to be tightly pressed on a grinding pad which is provided with a plurality of concentric annular grooves; grinding fluid is injected into the grinding pad according to the thickness of the oxide layer to be grinded away; ammonium hydroxide with the corresponding rate of flow is injected into the annular grooves, formed in positions with different distances to the center of the grinding pad, of the grinding pad; and the rotation speed of the grinding head and the rotation speed of a turntable bearing the grinding pad are set so as to grind the oxide layer on the surface of the wafer. The factors affecting the grinding evenness are reasonably set, so that grinding for the oxide layer on the surface of the wafer is achieved, the ground surface of the oxide layer is level, the thickness of the oxide layer ground away is even, and the yield of products is improved.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, particularly to the grinding side of a kind of wafer surface oxidation layer
Method.
Background technology
In semiconductor fabrication process, along with Highgrade integration and the miniaturization of semiconductor device, to wafer table
The flatening process in face requires also more and more higher, generally uses cmp to realize putting down wafer
Smooth metallization processes, cmp is also highly important one procedure in fabrication of semiconductor device, logical
Cross the oxide layer of lapping liquid corrosion crystal column surface and unnecessary metal, reach the treatment effect of surface planarisation.
Fig. 1 show the top view of the basic structure of chemical-mechanical grinding device.This CMP tool mainly includes
Grinding plate (not shown), it is placed in the grinding pad (Pad) 140 above grinding plate, grinding head (Polishing
Head) 130, slurry transporter (Slurry delivery) 120 and polishing pad adjusting device (Pad
Conditioner)110.When carrying out CMP (cmp), it would be desirable to the wafer that planarization processes
It is placed in grinding head 130, under the effect of the certain pressure (Down force) of grinding head 130, makes to wait to put down
The crystal column surface of smoothization is pressed onto on grinding pad 140；Then, grinding plate is at the drive backspin of power set
Turning, grinding head 130 is also carried out rotating Vortex (being such as rotation counterclockwise), thus makees while slurry
Cmp is realized under with.
But, in actual process of lapping, find that the problem of wafer surface oxidation layer grinding thickness inequality compares
Significantly, can see that from microscope the obvious colourity of crystal column surface is uneven and over worn sign, this kind of lack
Fall into the yield that have impact on product to a certain extent.
Summary of the invention
It is an object of the invention to provide the Ginding process of a kind of wafer surface oxidation layer, to solve crystal column surface
Oxide layer occurs the problem that grinding thickness is uneven in actual process of lapping.
For solving above-mentioned technical problem, the present invention provides the Ginding process of a kind of wafer surface oxidation layer, described
The Ginding process of wafer surface oxidation layer comprises the steps:
The wafer that one surface is formed oxide layer is placed on grinding head, and described grinding head applies certain pressure to be made
The surface of described wafer is pressed onto on grinding pad, and described grinding pad has multiple concentric annular groove；
According to the thickness of oxide layer to be ground away, inject lapping liquid to described grinding pad, simultaneously selected described
On grinding pad, the groove of distance grinding pad center diverse location injects the ammonia of corresponding discharge, and sets grinding head
Rotating speed and carry the rotating speed of rotating disk of described grinding pad, be ground with the oxide layer to described crystal column surface.
Optionally, in the Ginding process of described wafer surface oxidation layer, to distance grinding pad center
When the most remote groove injects ammonia, the volume of the ammonia of injection is the biggest.
Optionally, in the Ginding process of described wafer surface oxidation layer, selected distance grinding pad center
During the 5th groove, injecting 0.5ml～1.5ml ammonia, the rotating speed of grinding head is 25rpm/min～30rpm/min,
The rotating speed of rotating disk is 50rpm/min～60rpm/min.
Optionally, in the Ginding process of described wafer surface oxidation layer, selected distance grinding pad center
During the 7th groove, injecting 1.5ml～2.5ml ammonia, the rotating speed of grinding head is 25rpm/min～30rpm/min,
Set the rotating speed of rotating disk as 50rpm/min～60rpm/min.
Optionally, in the Ginding process of described wafer surface oxidation layer, selected distance grinding pad center
During the 9th groove, injecting 2.5ml～3.5ml ammonia, the rotating speed of grinding head is 25rpm/min～30rpm/min,
Set the rotating speed of rotating disk as 50rpm/min～60rpm/min.
Optionally, in the Ginding process of described wafer surface oxidation layer, selected distance grinding pad center
During the 11st groove, injecting 3.5ml～4.5ml ammonia, the rotating speed of grinding head is
25rpm/min～30rpm/min, sets the rotating speed of rotating disk as 50rpm/min～60rpm/min.
Optionally, in the Ginding process of described wafer surface oxidation layer, the pressure that described grinding head applies
For 4psi～6psi.
Optionally, in the Ginding process of described wafer surface oxidation layer, dissolved with SeO in described lapping liquid2。
Optionally, in the Ginding process of described wafer surface oxidation layer, the concentration of described ammonia is
5%～15%.
In the Ginding process of wafer surface oxidation layer provided by the present invention, a surface is formed with oxide layer
Wafer be placed on grinding head, described grinding head apply certain pressure makes the surface of described wafer be pressed onto grinding
On pad, described grinding pad has multiple concentric annular groove；According to the thickness of oxide layer to be ground away,
Inject lapping liquid to described grinding pad, select distance grinding pad center diverse location on described grinding pad simultaneously
Groove inject corresponding discharge ammonia, and set grinding head rotating speed and carry described grinding pad rotating disk turn
Speed, is ground with the oxide layer to described crystal column surface, and the uniformity is ground in the relatively reasonable impact that sets
Factor realizes the grinding to wafer surface oxidation layer, and the oxide layer surface after grinding is the most smooth, grinds away
Thickness is more uniform, improves the yield of product.
Accompanying drawing explanation
Fig. 1 is the top view of the basic structure of chemical-mechanical grinding device；
Fig. 2 is the flow chart of the Ginding process of wafer surface oxidation layer in one embodiment of the invention.
Detailed description of the invention
Below in conjunction with the drawings and specific embodiments, the Ginding process of the wafer surface oxidation layer that the present invention proposes is made
Further describe.According to following explanation and claims, advantages and features of the invention will be apparent from.
It should be noted that, accompanying drawing all uses the form simplified very much and all uses non-ratio accurately, only in order to convenient,
Aid in illustrating the purpose of the embodiment of the present invention lucidly.
Refer to Fig. 1 and Fig. 2, Fig. 2 is the Ginding process of wafer surface oxidation layer in one embodiment of the invention
Flow chart, as in figure 2 it is shown, the Ginding process of described wafer surface oxidation layer comprises the following steps:
First, performing step S1, the wafer that a surface is formed oxide layer is placed on grinding head 130, institute
State grinding head 130 to apply certain pressure and make the surface of described wafer be pressed onto on grinding pad 140, described grinding
On pad 140, there is multiple concentric annular groove.Specifically understand please continue to refer to Fig. 1.Wherein, institute
The pressure stating grinding head 130 applying is 4psi～6psi.
Then, step S2 is performed, according to the thickness of oxide layer to be ground away, to described grinding pad 140 note
Enter lapping liquid, select the groove note of distance grinding pad 140 center diverse location on described grinding pad 140 simultaneously
Enter the ammonia of corresponding discharge, and set the rotating speed of grinding head 130 and carry the rotating disk of described grinding pad 140
Rotating speed, is ground with the oxide layer to described crystal column surface.
It is also preferred that the left the concentration of described ammonia is 5%～15%.It has been investigated that grinding effect is by the shadow of pH value
Ring, and the purpose injecting ammonia while injecting lapping liquid is to change the pH value of process of lapping, makes wafer exist
It is ground under preferably PH, thus obtains preferable grinding effect.
Further, described lapping liquid is dissolved with SeO2。
Further, when the groove the most remote to distance grinding pad 140 center injects ammonia, the ammonia of injection
The volume of water is the biggest.
It is further appreciated by step S2 below in conjunction with 4 embodiments and form 1.
Table 1 includes that two use existing Ginding process to its relevant ginseng after the grinding of wafer surface oxidation layer
The Ginding process of number and the employing present invention is to the feelings of relevant parameter after the grinding of the two wafer surface oxidation layer
Condition.Reference table 1, the wherein situation after corresponding two the existing Ginding process of employing of label #1-BL and #2-BL,
RR represents grinding rate, and Nu represents the uniformity of crystal column surface, and the flatness after the least explanation of Nu is ground is the best,
PD quantity represent grinding after the residual particles amount ground away on wafer surface oxidation layer.
| Label | RR | Nu% | PD quantity |
| (#1)-BL | 1728.982 | 15.79% | -5 |
| (#2)-BL | 1600.896 | 22.86% | -13 |
| (#3)-1 | 1929.382 | 15.55% | -10 |
| (#4)-1 | 2214.37 | 10.05% | -6 |
| (#5)-2 | 2110.866 | 10.30% | -81 |
| (#6)-2 | 2209.468 | 12.01% | 99 |
| (#7)-3 | 2166.688 | 10.95% | -1 |
| (#8)-3 | 2252.36 | 8.29% | -7 |
| (#9)-4 | 2186.248 | 7.32% | -86 |
| (#10)-4 | 2336.636 | 6.17% | -56 |
Table 1
Embodiment one:
Refer to table 1 is numbered (#3)-1, (#4)-1 liang of row, the most corresponding label of the parameter of this two row
(#1)-BL, the wafer that (#2)-BL is corresponding.Table 1 is numbered (#3)-1, and the parameter of (#4)-1 liang of row is selected
When the 5th groove at grinding pad 140 center, inject 0.5ml～1.5ml ammonia, turning of grinding head 130
Speed is 25rpm/min～30rpm/min, the rotating speed of rotating disk by being obtained after 50rpm/min～60rpm/min,
From date comprision in table, within the unit interval, grinding rate improves, and Nu% is by original 15.79%
Being decreased to 15.55%, illustrate that flatness has promoted, PD quantity also increased.
Embodiment two:
Refer to table 1 is numbered (#5)-2, (#6)-2 liang of row, the most corresponding label of the parameter of this two row
(#1)-BL, the wafer that (#2)-BL is corresponding.Table 1 is numbered (#5)-2, and the parameter of (#6)-2 liang of row is selected
When the 7th groove at grinding pad 140 center, inject 1.5ml～2.5ml ammonia, turning of grinding head 130
Speed is 25rpm/min～30rpm/min, sets the rotating speed of rotating disk as 50rpm/min～60rpm/min.
Embodiment three:
Refer to table 1 is numbered (#7)-3, (#8)-3 liang of row, the most corresponding label of the parameter of this two row
(#1)-BL, the wafer that (#2)-BL is corresponding.Table 1 is numbered (#7)-3, and the parameter of (#8)-3 liang of row is selected
When the 9th groove at grinding pad 140 center, inject 2.5ml～3.5ml ammonia, turning of grinding head 130
Speed is 25rpm/min～30rpm/min, sets the rotating speed of rotating disk as 50rpm/min～60rpm/min.
Embodiment four:
Refer to table 1 is numbered (#9)-4, (#10)-4 liang of row, the most corresponding label of the parameter of this two row
(#1)-BL, the wafer that (#2)-BL is corresponding.Table 1 is numbered (#9)-4, and the parameter of (#10)-4 liang of row is selected
When the 11st groove at grinding pad 140 center, inject 3.5ml～4.5ml ammonia, grinding head 130
Rotating speed is 25rpm/min～30rpm/min, sets the rotating speed of rotating disk as 50rpm/min～60rpm/min.
Aforementioned four embodiment is only four kinds of situations of the application, certainly for select inject ammonia position,
The arranging including, but not limited to above-mentioned several situations, only of rotating speed about grinding head 130 rotating speed and rotating disk
Meet the actual grinding demand for wafer surface oxidation layer.
To sum up, in the Ginding process of wafer surface oxidation layer provided by the present invention, a surface is formed
The wafer of oxide layer is placed on grinding head, and described grinding head applies certain pressure makes the surface of described wafer press
On grinding pad, described grinding pad has multiple concentric annular groove；According to oxide layer to be ground away
Thickness, inject lapping liquid to described grinding pad, select on described grinding pad distance grinding pad center not simultaneously
The groove of co-located injects the ammonia of corresponding discharge, and sets the rotating speed of grinding head and carry described grinding pad
The rotating speed of rotating disk, is ground with the oxide layer to described crystal column surface, and relatively reasonable setting impact is ground
The factor of the uniformity realizes the grinding to wafer surface oxidation layer, and the oxide layer surface after grinding is the most smooth,
The thickness ground away is more uniform, improves the yield of product.
Foregoing description is only the description to present pre-ferred embodiments, not any restriction to the scope of the invention,
Any change that the those of ordinary skill in field of the present invention does according to the disclosure above content, modification, belong to power
The protection domain of profit claim.
Claims (9)
1. the Ginding process of a wafer surface oxidation layer, it is characterised in that comprise the following steps:
The wafer that one surface is formed oxide layer is placed on grinding head, and described grinding head applies certain pressure to be made
The surface of described wafer is pressed onto on grinding pad, and described grinding pad has multiple concentric annular groove；
According to the thickness of oxide layer to be ground away, inject lapping liquid to described grinding pad, simultaneously selected described
On grinding pad, the groove of distance grinding pad center diverse location injects the ammonia of corresponding discharge, and sets grinding head
Rotating speed and carry the rotating speed of rotating disk of described grinding pad, be ground with the oxide layer to described crystal column surface.
2. the Ginding process of wafer surface oxidation layer as claimed in claim 1, it is characterised in that to distance
When the most remote groove in grinding pad center injects ammonia, the volume of the ammonia of injection is the biggest.
3. the Ginding process of wafer surface oxidation layer as claimed in claim 2, it is characterised in that selected away from
When the 5th groove at grinding pad center, injecting 0.5ml～1.5ml ammonia, the rotating speed of grinding head is
25rpm/min～30rpm/min, the rotating speed of rotating disk is 50rpm/min～60rpm/min.
4. the Ginding process of wafer surface oxidation layer as claimed in claim 2, it is characterised in that selected away from
When the 7th groove at grinding pad center, injecting 1.5ml～2.5ml ammonia, the rotating speed of grinding head is
25rpm/min～30rpm/min, sets the rotating speed of rotating disk as 50rpm/min～60rpm/min.
5. the Ginding process of wafer surface oxidation layer as claimed in claim 2, it is characterised in that selected away from
When the 9th groove at grinding pad center, injecting 2.5ml～3.5ml ammonia, the rotating speed of grinding head is
25rpm/min～30rpm/min, sets the rotating speed of rotating disk as 50rpm/min～60rpm/min.
6. the Ginding process of wafer surface oxidation layer as claimed in claim 2, it is characterised in that selected away from
When the 11st groove at grinding pad center, injecting 3.5ml～4.5ml ammonia, the rotating speed of grinding head is
25rpm/min～30rpm/min, sets the rotating speed of rotating disk as 50rpm/min～60rpm/min.
7. the Ginding process of the wafer surface oxidation layer as according to any one of claim 1-6, its feature exists
In, the pressure that described grinding head applies is 4psi～6psi.
8. the Ginding process of the wafer surface oxidation layer as according to any one of claim 1-6, its feature exists
In, dissolved with SeO in described lapping liquid2。
9. the Ginding process of the wafer surface oxidation layer as according to any one of claim 1-6, its feature exists
In, the concentration of described ammonia is 5%～15%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510080427.1A CN105983898A (en) | 2015-02-13 | 2015-02-13 | Grinding method for oxide layer on surface of wafer |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510080427.1A CN105983898A (en) | 2015-02-13 | 2015-02-13 | Grinding method for oxide layer on surface of wafer |
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| CN105983898A true CN105983898A (en) | 2016-10-05 |
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000173959A (en) * | 1998-12-03 | 2000-06-23 | Nec Corp | Manufacture of semiconductor device |
| US6319833B1 (en) * | 1998-12-07 | 2001-11-20 | Advanced Micro Devices, Inc. | Chemically preventing copper dendrite formation and growth by spraying |
| CN202462207U (en) * | 2011-12-31 | 2012-10-03 | 中芯国际集成电路制造(上海)有限公司 | Grinding pad and grinding device |
| CN103972049A (en) * | 2014-04-22 | 2014-08-06 | 上海华力微电子有限公司 | Wafer recycling method |
| CN104022014A (en) * | 2013-03-01 | 2014-09-03 | 中芯国际集成电路制造(上海)有限公司 | Wet cleaning method |
| CN104681414A (en) * | 2015-02-28 | 2015-06-03 | 上海华虹宏力半导体制造有限公司 | Cleaning method of polycrystalline silicon processed by chemical mechanical polishing |
| CN104742007A (en) * | 2013-12-30 | 2015-07-01 | 中芯国际集成电路制造(北京)有限公司 | Chemical mechanical grinding device and chemical mechanical grinding method |
-
2015
- 2015-02-13 CN CN201510080427.1A patent/CN105983898A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000173959A (en) * | 1998-12-03 | 2000-06-23 | Nec Corp | Manufacture of semiconductor device |
| US6319833B1 (en) * | 1998-12-07 | 2001-11-20 | Advanced Micro Devices, Inc. | Chemically preventing copper dendrite formation and growth by spraying |
| CN202462207U (en) * | 2011-12-31 | 2012-10-03 | 中芯国际集成电路制造(上海)有限公司 | Grinding pad and grinding device |
| CN104022014A (en) * | 2013-03-01 | 2014-09-03 | 中芯国际集成电路制造(上海)有限公司 | Wet cleaning method |
| CN104742007A (en) * | 2013-12-30 | 2015-07-01 | 中芯国际集成电路制造(北京)有限公司 | Chemical mechanical grinding device and chemical mechanical grinding method |
| CN103972049A (en) * | 2014-04-22 | 2014-08-06 | 上海华力微电子有限公司 | Wafer recycling method |
| CN104681414A (en) * | 2015-02-28 | 2015-06-03 | 上海华虹宏力半导体制造有限公司 | Cleaning method of polycrystalline silicon processed by chemical mechanical polishing |
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Application publication date: 20161005 |