CN105981145B - 具有扩散势垒区的晶体管 - Google Patents

具有扩散势垒区的晶体管 Download PDF

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Publication number
CN105981145B
CN105981145B CN201480066832.1A CN201480066832A CN105981145B CN 105981145 B CN105981145 B CN 105981145B CN 201480066832 A CN201480066832 A CN 201480066832A CN 105981145 B CN105981145 B CN 105981145B
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China
Prior art keywords
diffusion barrier
region
heavily doped
substrate
area
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CN201480066832.1A
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English (en)
Chinese (zh)
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CN105981145A (zh
Inventor
B·杨
X·李
P·齐达姆巴兰姆
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Qualcomm Inc
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Qualcomm Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
    • H10D62/299—Channel regions of field-effect devices of FETs of IGFETs having lateral doping variations
    • H10D62/307—Channel regions of field-effect devices of FETs of IGFETs having lateral doping variations the doping variations being parallel to the channel lengths
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H01L21/743—Making of internal connections, substrate contacts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H10D30/608—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs  having non-planar bodies, e.g. having recessed gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/62—Fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/751—Insulated-gate field-effect transistors [IGFET] having composition variations in the channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/791—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions
    • H10D30/797—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions being in source or drain regions, e.g. SiGe source or drain
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/01—Manufacture or treatment
    • H10D62/021—Forming source or drain recesses by etching e.g. recessing by etching and then refilling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/351—Substrate regions of field-effect devices
    • H10D62/357—Substrate regions of field-effect devices of FETs
    • H10D62/364—Substrate regions of field-effect devices of FETs of IGFETs
    • H10D62/378—Contact regions to the substrate regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H10D62/824—Heterojunctions comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
CN201480066832.1A 2013-12-09 2014-11-20 具有扩散势垒区的晶体管 Active CN105981145B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/100,760 US9263522B2 (en) 2013-12-09 2013-12-09 Transistor with a diffusion barrier
US14/100,760 2013-12-09
PCT/US2014/066676 WO2015088737A1 (en) 2013-12-09 2014-11-20 Transistor with a diffusion barrier

Publications (2)

Publication Number Publication Date
CN105981145A CN105981145A (zh) 2016-09-28
CN105981145B true CN105981145B (zh) 2019-06-04

Family

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Application Number Title Priority Date Filing Date
CN201480066832.1A Active CN105981145B (zh) 2013-12-09 2014-11-20 具有扩散势垒区的晶体管

Country Status (5)

Country Link
US (1) US9263522B2 (enExample)
EP (1) EP3080836A1 (enExample)
JP (1) JP2016539509A (enExample)
CN (1) CN105981145B (enExample)
WO (1) WO2015088737A1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9570613B2 (en) * 2015-02-13 2017-02-14 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and formation method of FinFET device
US9793403B2 (en) * 2015-04-14 2017-10-17 Samsung Electronics Co., Ltd. Multi-layer fin field effect transistor devices and methods of forming the same
US9917195B2 (en) * 2015-07-29 2018-03-13 International Business Machines Corporation High doped III-V source/drain junctions for field effect transistors
US9941363B2 (en) * 2015-12-18 2018-04-10 International Business Machines Corporation III-V transistor device with self-aligned doped bottom barrier
WO2017171873A1 (en) * 2016-04-01 2017-10-05 Intel Corporation Dopant diffusion barrier for source/drain to curb dopant atom diffusion
US10475692B2 (en) * 2017-04-07 2019-11-12 Globalfoundries Inc. Self aligned buried power rail
US11335796B2 (en) * 2017-12-30 2022-05-17 Intel Corporation Source to channel junction for III-V metal-oxide-semiconductor field effect transistors (MOSFETs)
US11742400B2 (en) * 2018-08-14 2023-08-29 Taiwan Semiconductor Manufacturing Company, Ltd. Fin field effect transistor (FinFET) device structure with deep contact structure
US11515197B2 (en) * 2019-07-11 2022-11-29 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor device and method of forming the semiconductor device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1102327A2 (en) * 1999-11-15 2001-05-23 Matsushita Electric Industrial Co., Ltd. Field effect semiconductor device
US20090242873A1 (en) * 2008-03-28 2009-10-01 Ravi Pillarisetty Semiconductor heterostructures to reduce short channel effects
CN102376715A (zh) * 2010-08-11 2012-03-14 中国科学院微电子研究所 一种无电容型动态随机访问存储器结构及其制备方法
CN102983165A (zh) * 2011-09-06 2013-03-20 台湾积体电路制造股份有限公司 控制沟道厚度的FinFET设计

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5111255A (en) * 1990-06-05 1992-05-05 At&T Bell Laboratories Buried channel heterojunction field effect transistor
JP3408762B2 (ja) * 1998-12-03 2003-05-19 シャープ株式会社 Ｓｏｉ構造の半導体装置及びその製造方法
US6426279B1 (en) 1999-08-18 2002-07-30 Advanced Micro Devices, Inc. Epitaxial delta doping for retrograde channel profile
JP4220665B2 (ja) * 1999-11-15 2009-02-04 パナソニック株式会社 半導体装置
US20020090167A1 (en) * 2001-01-08 2002-07-11 Michael Geva Electronic device having a barrier region including aluminum and a method of manufacture therefor
US20050250289A1 (en) * 2002-10-30 2005-11-10 Babcock Jeffrey A Control of dopant diffusion from buried layers in bipolar integrated circuits
JP4601263B2 (ja) 2003-04-25 2010-12-22 三菱電機株式会社 電界効果トランジスタ
US7491988B2 (en) 2004-06-28 2009-02-17 Intel Corporation Transistors with increased mobility in the channel zone and method of fabrication
US7632745B2 (en) * 2007-06-30 2009-12-15 Intel Corporation Hybrid high-k gate dielectric film
US8796777B2 (en) * 2009-09-02 2014-08-05 Qualcomm Incorporated Fin-type device system and method
US8421162B2 (en) 2009-09-30 2013-04-16 Suvolta, Inc. Advanced transistors with punch through suppression
TWI451552B (zh) * 2009-11-10 2014-09-01 Taiwan Semiconductor Mfg 積體電路結構
US8999798B2 (en) * 2009-12-17 2015-04-07 Applied Materials, Inc. Methods for forming NMOS EPI layers
US8431994B2 (en) * 2010-03-16 2013-04-30 International Business Machines Corporation Thin-BOX metal backgate extremely thin SOI device
JP5847549B2 (ja) * 2011-11-16 2016-01-27 ルネサスエレクトロニクス株式会社 半導体装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1102327A2 (en) * 1999-11-15 2001-05-23 Matsushita Electric Industrial Co., Ltd. Field effect semiconductor device
US20090242873A1 (en) * 2008-03-28 2009-10-01 Ravi Pillarisetty Semiconductor heterostructures to reduce short channel effects
CN102376715A (zh) * 2010-08-11 2012-03-14 中国科学院微电子研究所 一种无电容型动态随机访问存储器结构及其制备方法
CN102983165A (zh) * 2011-09-06 2013-03-20 台湾积体电路制造股份有限公司 控制沟道厚度的FinFET设计

Also Published As

Publication number Publication date
EP3080836A1 (en) 2016-10-19
CN105981145A (zh) 2016-09-28
WO2015088737A1 (en) 2015-06-18
JP2016539509A (ja) 2016-12-15
US20150162405A1 (en) 2015-06-11
US9263522B2 (en) 2016-02-16

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