CN105981105B - 用于垂直磁性隧道结的具有非晶盖层的双界面自由层 - Google Patents

用于垂直磁性隧道结的具有非晶盖层的双界面自由层 Download PDF

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CN105981105B
CN105981105B CN201480075336.2A CN201480075336A CN105981105B CN 105981105 B CN105981105 B CN 105981105B CN 201480075336 A CN201480075336 A CN 201480075336A CN 105981105 B CN105981105 B CN 105981105B
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layer
amorphous
mtj
barrier layer
barrier
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CN105981105A (zh
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C·朴
K·李
S·H·康
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Qualcomm Inc
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Qualcomm Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Materials of the active region
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
CN201480075336.2A 2014-02-12 2014-12-18 用于垂直磁性隧道结的具有非晶盖层的双界面自由层 Active CN105981105B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/179,502 US9601687B2 (en) 2014-02-12 2014-02-12 Dual interface free layer with amorphous cap layer for perpendicular magnetic tunnel junction
US14/179,502 2014-02-12
PCT/US2014/071258 WO2015122963A1 (en) 2014-02-12 2014-12-18 Dual interface free layer with amorphous cap layer for perpendicular magnetic tunnel junction

Publications (2)

Publication Number Publication Date
CN105981105A CN105981105A (zh) 2016-09-28
CN105981105B true CN105981105B (zh) 2018-12-11

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CN201480075336.2A Active CN105981105B (zh) 2014-02-12 2014-12-18 用于垂直磁性隧道结的具有非晶盖层的双界面自由层

Country Status (5)

Country Link
US (1) US9601687B2 (enExample)
EP (1) EP3105760B1 (enExample)
JP (1) JP6173610B2 (enExample)
CN (1) CN105981105B (enExample)
WO (1) WO2015122963A1 (enExample)

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KR20180035846A (ko) 2015-07-30 2018-04-06 쓰리엠 이노베이티브 프로퍼티즈 캄파니 부분적으로 매립된 필라멘트를 갖는 접착제 층을 구비한 웨브
US9412935B1 (en) * 2015-09-07 2016-08-09 Yeu-Chung LIN Method for fabricating magnetic tunnel junction and 3-D magnetic tunnel junction array
US9963780B2 (en) * 2015-12-03 2018-05-08 International Business Machines Corporation Growth of metal on a dielectric
KR102611463B1 (ko) 2016-08-02 2023-12-08 삼성전자주식회사 자기 기억 소자 및 그 제조방법
US9935261B1 (en) * 2017-04-05 2018-04-03 Headway Technologies, Inc. Dielectric encapsulation layer for magnetic tunnel junction (MTJ) devices using radio frequency (RF) sputtering
US10347824B2 (en) 2017-06-02 2019-07-09 Sandisk Technologies Llc Composite free layer for magnetoresistive random access memory
US10347310B2 (en) 2017-06-02 2019-07-09 Sandisk Technologies Llc Composite free layer for magnetoresistive random access memory
DE112018004229T5 (de) * 2017-11-21 2020-07-02 Sandisk Technologies Llc Freie verbundschicht für magnetoresistiven direktzugriffsspeicher
US10636964B2 (en) * 2018-03-30 2020-04-28 Applied Materials, Inc. Magnetic tunnel junctions with tunable high perpendicular magnetic anisotropy
US10541269B2 (en) 2018-06-26 2020-01-21 Taiwan Semiconductor Manufacturing Co., Ltd. Magnetic random access memory and manufacturing method thereof
US11009570B2 (en) * 2018-11-16 2021-05-18 Samsung Electronics Co., Ltd. Hybrid oxide/metal cap layer for boron-free free layer
US11456411B2 (en) 2019-07-02 2022-09-27 HeFeChip Corporation Limited Method for fabricating magnetic tunneling junction element with a composite capping layer
US12108684B2 (en) 2019-07-21 2024-10-01 HeFeChip Corporation Limited Magnetic tunneling junction element with a composite capping layer and magnetoresistive random access memory device using the same
CN114641868A (zh) * 2019-10-31 2022-06-17 国立大学法人东北大学 隧道结层叠膜、磁存储元件和磁存储器
US11251366B2 (en) 2019-11-22 2022-02-15 Samsung Electronics Co., Ltd. Oxide interlayers containing glass-forming agents
US11005034B1 (en) 2019-11-22 2021-05-11 Western Digital Technologies, Inc. Magnetoresistive memory device including a high dielectric constant capping layer and methods of making the same
US11839162B2 (en) 2019-11-22 2023-12-05 Western Digital Technologies, Inc. Magnetoresistive memory device including a plurality of reference layers
US10991407B1 (en) * 2019-11-22 2021-04-27 Western Digital Technologies, Inc. Magnetoresistive memory device including a high dielectric constant capping layer and methods of making the same
US12225828B2 (en) 2019-11-22 2025-02-11 SanDisk Technologies, Inc. Voltage controlled magnetic anisotropy (VCMA) memory devices including platinum containing layer in contact with free layer
US11404632B2 (en) 2019-11-22 2022-08-02 Western Digital Technologies, Inc. Magnetoresistive memory device including a magnesium containing dust layer
US11361805B2 (en) 2019-11-22 2022-06-14 Western Digital Technologies, Inc. Magnetoresistive memory device including a reference layer side dielectric spacer layer
WO2021101585A1 (en) * 2019-11-22 2021-05-27 Western Digital Technologies, Inc. Magnetoresistive memory device including a high dielectric constant capping layer and methods of making the same
US11056640B2 (en) * 2019-11-22 2021-07-06 Western Digital Technologies, Inc. Magnetoresistive memory device including a high dielectric constant capping layer and methods of making the same
US11871679B2 (en) 2021-06-07 2024-01-09 Western Digital Technologies, Inc. Voltage-controlled magnetic anisotropy memory device including an anisotropy-enhancing dust layer and methods for forming the same
US11404193B2 (en) 2019-11-22 2022-08-02 Western Digital Technologies, Inc. Magnetoresistive memory device including a magnesium containing dust layer
CN112928203B (zh) * 2019-12-05 2023-04-07 上海磁宇信息科技有限公司 多层覆盖层的磁性隧道结结构及磁性随机存储器
EP3879543B1 (en) 2020-03-11 2024-11-27 Allegro MicroSystems, LLC Method for manufacturing a magnetoresistive sensor element for sensing a two-dimensional magnetic field with low high-field error
CN114613904A (zh) * 2020-12-09 2022-06-10 浙江驰拓科技有限公司 磁性隧道结器件及其制造方法
US11889702B2 (en) 2021-06-07 2024-01-30 Western Digital Technologies, Inc. Voltage-controlled magnetic anisotropy memory device including an anisotropy-enhancing dust layer and methods for forming the same
US11887640B2 (en) 2021-06-07 2024-01-30 Western Digital Technologies, Inc. Voltage-controlled magnetic anisotropy memory device including an anisotropy-enhancing dust layer and methods for forming the same
US12402538B2 (en) * 2022-08-15 2025-08-26 United Microelectronics Corp. Magnetic memory device and fabrication method thereof

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CN103250263A (zh) * 2010-12-22 2013-08-14 株式会社爱发科 穿隧磁阻元件的制造方法

Also Published As

Publication number Publication date
US9601687B2 (en) 2017-03-21
WO2015122963A1 (en) 2015-08-20
US20150228891A1 (en) 2015-08-13
EP3105760A1 (en) 2016-12-21
JP2017505544A (ja) 2017-02-16
EP3105760B1 (en) 2022-09-14
CN105981105A (zh) 2016-09-28
JP6173610B2 (ja) 2017-08-02

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