CN105974460B - Restructural type X-ray energy spectrum detection method and detector pixel cellular construction - Google Patents

Restructural type X-ray energy spectrum detection method and detector pixel cellular construction Download PDF

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CN105974460B
CN105974460B CN201610311377.8A CN201610311377A CN105974460B CN 105974460 B CN105974460 B CN 105974460B CN 201610311377 A CN201610311377 A CN 201610311377A CN 105974460 B CN105974460 B CN 105974460B
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史再峰
孟庆振
杨浩宇
曹清洁
张嘉平
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Tianjin University
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Abstract

The present invention relates to semiconductor photo detector fields, and to solve the problems, such as that existing power spectrum CT detector energy discrimination is insufficient, the precision for promoting power spectrum CT imaging can parse to obtain the dampening information of the X-ray of multiple and different energy sections by single exposure.The technical solution adopted by the present invention is that, restructural type X-ray energy spectrum detection method and detector pixel cellular construction, substrate portions as detector body are advisable for completing the reception of X-ray and the conversion of photosignal, substrate portions size with all absorbing the x-ray photon in energy spectrum to be detected;Two surface of substrate portions is the oxide of thermal oxide growth, and the oxide realizes that substrate portions are isolated with the electrical isolation of electrode;The electrode is connected to timing control unit by plain conductor, realizes sequentially reading for charge packet;It is additionally provided with the barn door for controlling the X-ray exposure time.Present invention is mainly applied to semiconductor photo detectors to manufacture and design occasion.

Description

Restructural type X-ray energy spectrum detection method and detector pixel cellular construction
Technical field
The present invention relates to semiconductor photo detector fields, more particularly to the detection to medical X-ray power spectrum.
Background technique
The detector of conventional medical spiral CT (Computed Tomography, CT scan) is penetrated based on X The average attenuation effect of line is detected, and the image after reconstruction is serious by beam hardening effects and phase in human body cannot be distinguished Like institutional framework.Currently, power spectrum CT stronger to substance distinction increasingly becomes people with the continuous development of detector technology The focus studied.Power spectrum CT, to the difference of different photon energy absorption abilities, utilizes multiple groups X-ray energy based on tissue Attenuation characteristic carry out image reconstruction, image informations more more than conventional CT can be provided.Power spectrum CT imaging key technology be exactly The X-ray of multiple kinds of energy is obtained in the intracorporal dampening information of people, the X-ray with high-precision power spectrum analytic ability using detector Eds detector is the extremely important part power spectrum CT.
Currently, medical power spectrum CT more common X-ray detector is indirect-type detector, scintillation fluor body material is mainly utilized X-ray is converted into visible light by material, then is detected with visible-light detector.This method, can be inevitable in conversion process Ground causes X-ray energy to lose, and lower to the energy discrimination of X-ray, as more in used in Medical power spectrum CT Dual-energy detector can only high energy to X-ray and low-energy component analyze, but also it is serious by beam hardening effects, very Hardly possible meets the practical medical demand of the power spectrum CT using more energy imagings.The present invention towards medical power spectrum CT practical application area, A kind of high-precision X-ray energy spectrum detector pixel structure is proposed, and a kind of restructural X-ray is proposed based on this structure Power spectrum layered probe method can obtain the dampening information of the X-ray of multiple kinds of energy component by single exposure simultaneously, can be doctor More parameter informations are provided with power spectrum CT imaging, sufficiently meet requirement of the power spectrum CT to substance qualitative and quantitative analysis.
Summary of the invention
In order to overcome the deficiencies of the prior art, it solves the problems, such as that existing power spectrum CT detector energy discrimination is insufficient, is promoted The precision of power spectrum CT imaging, the invention proposes a kind of high-precision X-ray energy spectrum detector pixel structure and corresponding power spectrums Layered probe method.By single exposure, can parse to obtain the dampening information of the X-ray of multiple and different energy sections.Utilize this Detector pixel structure and can spectrum detecting method, higher resolution, more can be obtained while reducing patient and bearing amount of radiation High-precision clinical image.The technical solution adopted by the present invention is that restructural type X-ray energy spectrum detector pixel cellular construction, Substrate portions as detector body are for completing the reception of X-ray and the conversion of photosignal, and substrate portions size is with complete The x-ray photon that portion absorbs in energy spectrum to be detected is advisable;Substrate portions upper surface is the oxide of thermal oxide growth, described Oxide realizes that substrate portions are isolated with the electrical isolation of electrode;The electrode is made of polysilicon or metal material, and positive and negative right Answer it is discrete be arranged in substrate portions lower surface and oxide upper surface, wherein all positive electrodes are distributed in same surface, own Negative electrode be distributed in another surface;The positive electrode is divided into several layers, every layer of positive electrode number by the adjacent relationship that is arranged successively It is identical;First positive electrode of each layer all passes through same root plain conductor and is connected to timing control unit in the several layers, institute It states second positive electrode of each layer in several layers and is connected to timing control unit also through another plain conductor, its in each layer Remaining electrode and the connection of timing control unit and so on;The timing control unit passes through control adjacent electrode low and high level week The variation of phase property, realizes sequentially reading for charge packet;It is additionally provided with the barn door for controlling the X-ray exposure time, barn door is beaten It opens X-ray and enters substrate portions, barn door closing X-ray, which is blocked, not can enter substrate portions.
Three-dimensional dimension, the size of number and interelectrode spacing view probe substrate and the collection effect of photogenerated charge of electrode Depending on rate, the electrode of sequence arrangement should meet the requirement of photogenerated charge after collection exposure completely.
The constituent material of the substrate portions selects in the semiconductors such as the P-type silicon being lightly doped or cadmium-zinc-teiluride, cadmium telluride It is a kind of.
The requirement that the electrode of sequence arrangement should meet photogenerated charge after collection completely exposes specifically refers to, and terminates in X-ray After exposure, start the transfer for carrying out photogenerated charge, photogenerated charge is under the control of electrode voltage with charge packet in detector Form shifts between adjacent electrode, specific timing: at the t1 moment, the positive electrode that number is 1 is set as high level, and charge can expose It is collected between photophase in the potential well under the positive electrode;At the t2 moment, the positive electrode that number is 1 is set as 1/2 times of high level, compiles Number high level is set as 2 positive electrode, there are potential barriers between two electrodes, and the positive electrode that number is 1 in the process is collected Charge will constantly flow direction number be 2 positive electrode;At the t3 moment, the electronics under the positive electrode that number is 1 will be fully transferred to In potential well under the positive electrode that number is 2, the positive electrode that number is 3 is set as high level;The rest may be inferred, until the light that will be collected Raw charge is successively transferred to the reading circuit positioned at the extreme side.
Restructural type X-ray energy spectrum detection method realizes that steps are as follows by means of foregoing detection device pixel cell structure:
Step1: detector resets: every detection process for completing primary X-ray, all needs to reset resetting detector, to open Open X-ray beam detection next time;
Step2:X x ray exposure x: it opens x-ray shielding hood and is exposed, adjust detector orientation, make ray from detector Side edge inject detector pixel cellular construction substrate portions, meet reconstruction image requirement time after close barn door, stop The only irradiation of ray;
Step3: photogenerated charge is collected: the positive electrode that all numbers are 1 is set to high level after X-ray starts irradiation, Negative electrode is all set to amplitude negative level identical with the high level, the collection of photogenerated charge is realized during exposure, is hidden Charge-trapping process terminates after tabula rasa is closed;
Step4: photogenerated charge transfer.After X-ray terminates exposure, start the transfer for carrying out photogenerated charge, in detector Interior photogenerated charge is shifted between adjacent electrode in the form of charge packet under the control of electrode voltage, specific timing: at the t1 moment, The positive electrode that number is 1 is set as high level, and charge can be collected into the potential well under the positive electrode during exposure;In t2 Carve, the positive electrode that number is 1 is set as 1/2 times of high level, and the positive electrode that number is 2 is set as high level, two electrodes it Between there are potential barrier, charge that the positive electrode that number is 1 in the process is collected will constantly flow direction number be 2 positive electrode;In t3 Moment, the electronics under the positive electrode that number is 1 will be fully transferred in the potential well under the positive electrode that number is 2, and number is 3 just Electrode is set as high level;The rest may be inferred, until the photogenerated charge of collection to be successively transferred to the reading circuit positioned at the extreme side;
Step5-1: photogenerated charge packet transaction: being directed to power spectrum resolving, after electric charge transfer reading, accords in order to obtain Desired power spectrum analysis result is closed, the photogenerated charge generated in the semiconductor of different depth needs to be grouped cumulative, charge point The form of group depends on the absorbing state of the spectral fragmentation situation and ray of X-ray to be resolved in the semiconductors;
Step5-2: photogenerated charge reconstruct grouping: optimal power spectrum analysis result in order to obtain, if the restructural charge of n kind point Group scheme is grouped scheme according to the n kind being previously set on the basis of Step5.1 is to charge processing, adjusts electric under each electrode The Packet State of pocket, the i.e. group of charge packet subordinate time change in each group and each group charge add up again after the total amount of charge, and point Respective accumulation result is not stored.After all n kind reconfiguration schemes are all carried out, terminate this charge reconstruct packet transaction step Suddenly;
Step6: power spectrum parsing: scheme is grouped according to n kind and retrodicts by the total amount of each group photogenerated charge and parses each area Between internal X-ray power spectrum dampening information, select optimal parsing result reconstruction image.
Segmentation power spectrum to be resolved has several, i.e., the photogenerated charge sequence in semiconductor combines several groups, charge grouping Position is fully absorbed in the semiconductor thickness with the X-ray of corresponding energy section to be advisable.
The features of the present invention and beneficial effect are:
The invention proposes a kind of high-precision X-ray energy spectrum detector pixel structures, and propose a kind of this knot of utilization The method of structure reconstruct detection X-ray energy spectrum information, realizes the layered probe of X-ray energy spectrum.By single exposure, can parse Obtain the X-ray energy spectrum dampening information of a variety of segmentations;And it can be wanted for different radiographic sources and different power spectrum parsing precision It asks, adjusts to dynamic reconfigurable the grouping of charge.This detection method not only reduces the dose of radiation of patient's receiving, more improves The quality of power spectrum CT imaging, the detection of the multi-power spectrum component suitable for medical X-ray.
Detailed description of the invention:
The voxel structure of X-ray energy spectrum detector Fig. 1 proposed by the invention.
The flow chart of Fig. 2 X-ray energy spectrum detection method.
Fig. 3 charge-trapping transfer timing figure.
Fig. 4 dot structure plan view.
Charge Dynamic Packet schematic diagram in Fig. 5 semiconductor.
Specific embodiment
When compound X-ray passes through semiconductor, the effects of due to photoelectric effect, Compton effect and pair effect, X-ray (i.e. incident photon) will be absorbed in the semiconductors and generate photogenerated charge, and the X-ray intensity of different-energy follows exponential damping The X-ray of rule, low energy will be first absorbed, and the X-ray absorption of high energy is slower.The present invention is based on the absorption of above-mentioned X-ray rule Rule, proposes a kind of marginal incident type X-ray energy spectrum detector pixel structure, and proposes a kind of this dot structure of utilization detection The method of X-ray segmentation spectral information.
Detector pixel structure specific embodiment proposed by the present invention is as follows:
Basic three dimension detector dot structure is as shown in Figure 1,101 be wherein probe substrate part, substrate material can To select the P-type silicon being lightly doped, it is also possible to the semiconductors such as cadmium-zinc-teiluride, the cadmium telluride of other suitable dimensions, is used as detector Main body mainly complete the reception of X-ray and the conversion of photosignal, substrate dimension is all to absorb in energy spectrums to be detected X-ray photon be advisable;102 parts are the oxide of the suitable thickness of thermal oxide growth in figure, main to realize substrate and electrode Electrical isolation isolation;103 parts are the electrode of polysilicon or metal material in figure, and discrete arrangement mode is as shown, each Electrode all passes through plain conductor and is connected to timing control unit 105, and timing control unit passes through control adjacent electrode low and high level Sequentially reading for charge packet is realized in cyclically-varying.Three-dimensional dimension, number and the interelectrode spacing of electrode regard probe substrate Size and photogenerated charge collection efficiency depending on, the electrode of sequence arrangement should meet collect exposure completely after photogenerated charge want It asks;104 parts are rear electrode, and size and distribution situation can refer to 103 electrode sections;106 structures are barn door, main function It is the time for exposure for controlling X-ray.The above are the spies suitable for restructural X-ray energy spectrum detection method proposed by the invention Survey device dot structure.
Based on above-mentioned detector pixel structure, the process of X-ray energy spectrum detection method proposed by the present invention as shown in Fig. 2, Specific embodiment is as follows:
Step1: detector resets.Every detection process for completing primary X-ray all needs to reset resetting detector, to open Open X-ray beam detection next time.It can be used and reset the mode of whole electrode potential zero setting, but be not limited only to such method.
Step2:X x ray exposure x.It opens x-ray shielding hood to be exposed, adjusts detector orientation, make ray from detector Side edge inject 101 part of probe substrate, as shown in Figure 1, meet reconstruction image requirement time after close barn door, stop The only irradiation of ray.
Step3: photogenerated charge is collected.All number is set to high level (this for the electrode of V1 after X-ray starts irradiation Place takes high level be 5v for, but be not limited only to this level standard), rear electrode Vss is all set to -5v and (but is not limited only to This level standard), the collection of photogenerated charge is realized during exposure, charge-trapping process terminates after barn door closing.
Step4: photogenerated charge transfer.After X-ray terminates exposure, start the transfer for carrying out photogenerated charge, in detector Interior photogenerated charge is mainly shifted between adjacent electrode in the form of charge packet under the control of electrode voltage.This sentences three-phase transfer For logic (but the electric charge transfer mode for being not limited only to this logic), specific timing is as shown in Figure 2: at the t1 moment, v1 electrode is set It is set to high level, charge can be collected into the potential well under v1 during exposure;At the t2 moment, v1 is set as 1/2 times of high level, V2 electrode is set as high level, and there are potential barriers between two electrodes, and the charge that v1 is collected in the process will constantly flow to v2;? T3 moment, the electronics under v1 electrode will be fully transferred in the potential well under v2 electrode, and v3 is set as high level;T4 moment, v2 electricity Charge under extremely is constantly shifted to v3, until t5 moment v2 charge is fully transferred in v3 electrode potential well.So far it completes primary complete Three whole phase control charge transfer processes.This step is repeated, the photogenerated charge of collection can be successively transferred to the reading of right end Circuit.
Step5-1: photogenerated charge packet transaction.It is accorded in order to obtain after electric charge transfer reading for power spectrum resolving Desired power spectrum analysis result is closed, the photogenerated charge generated in the semiconductor of different depth needs to be grouped cumulative.Charge point The form of group depends on the absorbing state of the spectral fragmentation situation and ray of X-ray to be resolved in the semiconductors.Ordinary circumstance Under, segmentation power spectrum to be resolved has several, i.e., the photogenerated charge sequence in semiconductor combine several groups, the position of charge grouping with The X-ray of corresponding energy section fully absorbs in the semiconductor thickness to be advisable.
Step5-2: photogenerated charge reconstruct grouping.Optimal power spectrum analysis result in order to obtain, the present invention is for detected The restructural charge grouping scheme that n kind is adapted therewith has been provided in advance in the radiation absorption characteristic of object.In Step5.1 to electricity On the basis of lotus processing, is grouped scheme according to the n kind being previously set, adjusts the Packet State of charge packet under each electrode, i.e., it is electric The group time of pocket subordinate changes and each group charge adds up again after the total amount of charge in each group and stores respective cumulative knot respectively Fruit.After all n kind reconfiguration schemes are all carried out, terminate this charge reconstruct packet transaction step;
After x ray exposure x, for the photogenerated charge packet in each potential well, sequential packet, benefit are carried out according to n kind presupposed solution One section of ray energy spectrum is solved with the charge under continuous multiple electrodes in potential well, the difference of every group of charge packet quantity is also just anticipated Taste solve energy spectral coverage have differences.
Step6: power spectrum parsing.Scheme is grouped according to n kind to retrodict by the total amount of each group photogenerated charge and parse each area Between internal X-ray power spectrum dampening information, select optimal parsing result reconstruction image.
By above six step, medical X-ray can be completed using detector pixel structure proposed by the invention and be segmented energy The reconstruct of spectrum information detects.
X-ray energy spectrum CT detector pixel structural plan structure proposed by the invention is as shown in figure 4, optimum implementation By taking length is the Si semiconductor of 5cm as an example, thickness TH and width Width take 0.5mm, thereon deposited oxide 0.005mm SiO2, last etches polycrystalline silicon and complete electrode interconnection, wherein polysilicon electrode with a thickness of 0.01mm, electrode length is 0.4mm, electrode width 0.1mm are divided into 0.001mm between adjacent electrode.Detector pixel structure reduces table using buried channel technique The dark current that face trap or defect generate.If X-ray energy magnitude to be detected is more than 100Kev, the length of detector should be more than 5cm.Panel detector structure proposed by the present invention is not limited in such substrate material and distribution of electrodes scheme, can also using CZT, Other semiconductor materials such as CdTe.
Described in X-ray energy spectrum detection process six step as above based on this structure, mainly include pixel-reset, X-ray exposure, Photogenerated charge is collected, photogenerated charge shifts, charge reconstructs packet transaction and power spectrum parses etc..This sentences three sections of continuous energy to be resolved For spectrum information 0-20Kev, 20-40Kev, 40-60Kev, after X-ray exposure, the difference of the ray of different-energy in semiconductor Depth generates the different photogenerated charge of quantity, the collection of each layer charge is completed by the potential well under electrode, and according to as shown in Figure 3 Electric charge transfer timing realizes that the layering of charge is read;It, will referring to X-ray segmentation spectral information and radiation absorption rule to be resolved Photogenerated charge in semiconductor is divided into three groups in order, as shown in figure 5, three groups are respectively 0-0.5cm, 0.5-2.0cm, 2.0- Photogenerated charge sum in each section of 3.5cm.It, can also be according still further to preset according to precision and image quality that power spectrum parses 5 kinds of grouping schemes, dynamic adjust the Packet State (i.e. the group time of adjustment charge packet subordinate) of charge packet under 5 sub-electrodes, adjust every time All the charge in each group is added up and stored after whole.After 5 kinds of all reconfiguration schemes are all carried out, terminate this process, most The segmentation spectral information of X-ray is retrodicted out by the photogenerated charge sum in the semiconductor of optimal thickness afterwards.It is provided by the invention Eds detector dot structure and the energy spectrum detecting method adaptable with it can provide more multi-component X-ray energy decaying letter Breath, can be applied to medical power spectrum CT imaging field.

Claims (5)

1. a kind of restructural type X-ray energy spectrum detector pixel cellular construction, characterized in that the substrate portion as detector body Divide for completing the reception of X-ray and the conversion of photosignal, substrate portions are sized to all absorb energy to be detected X-ray photon in spectral limit;Substrate portions upper surface is the oxide of thermal oxide growth, and the oxide realizes substrate portions It is isolated with the electrical isolation of electrode;The electrode is made of polysilicon or metal material, and positive and negative correspondence is discrete is arranged in substrate portion Divide lower surface and oxide upper surface, wherein all positive electrodes are distributed in same surface, all negative electrodes are distributed in another Surface;The positive electrode is divided into several layers by the adjacent relationship that is arranged successively, and every layer of positive electrode number is identical;It is each in the several layers First positive electrode of layer all passes through same root plain conductor and is connected to timing control unit, the second of each layer in the several layers A positive electrode is connected to timing control unit also through another plain conductor, remaining electrode and timing control unit in each layer Connection and so on;The timing control unit realizes charge packet by control adjacent electrode low and high level cyclically-varying Sequentially read;It is additionally provided with the barn door for controlling the X-ray exposure time, barn door opens X-ray and enters substrate portions, Barn door closing X-ray, which is blocked, not can enter substrate portions;The electrode of sequence arrangement should meet photoproduction after collection exposure completely The requirement of charge specifically refers to, and after X-ray terminates exposure, starts the transfer for carrying out photogenerated charge, the photoproduction electricity in detector Lotus is shifted between adjacent electrode in the form of charge packet under the control of electrode voltage, specific timing: at the t1 moment, number 1 Positive electrode be set as high level, charge can be collected into the potential well under the positive electrode during exposure;At the t2 moment, number is 1 positive electrode is set as 1/2 times of high level, and the positive electrode that number is 2 is set as high level, and there are gesture between two electrodes It builds, the positive electrode that continuous flow direction number is 2 by the charge that the positive electrode that number is 1 in the process is collected;At the t3 moment, number It will be fully transferred in the potential well under the positive electrode that number is 2 for the electronics under 1 positive electrode, the positive electrode setting that number is 3 For high level;The rest may be inferred, until the photogenerated charge of collection to be successively transferred to the reading circuit positioned at the extreme side.
2. restructural type X-ray energy spectrum detector pixel cellular construction as described in claim 1, characterized in that the three of electrode Size, number and interelectrode spacing are tieed up depending on the size of probe substrate and the collection efficiency of photogenerated charge, sequence is arranged Electrode should meet completely collect exposure after photogenerated charge requirement.
3. restructural type X-ray energy spectrum detector pixel cellular construction as described in claim 1, characterized in that the substrate Partial constituent material selects one of P-type silicon, cadmium-zinc-teiluride or the cadmium telluride semiconductor being lightly doped.
4. a kind of restructural type X-ray energy spectrum detection method, characterized in that by means of detector pixel list described in claim 1 Meta structure realizes that steps are as follows:
Step1: detector resets: every detection process for completing primary X-ray, all needs to reset resetting detector, to open down Primary X-ray beam detection;
Step2:X x ray exposure x: it opens x-ray shielding hood and is exposed, adjust detector orientation, make side of the ray from detector Detector pixel cellular construction substrate portions are injected at edge, are closed barn door after meeting the time of reconstruction image requirement, are stopped penetrating The irradiation of line;
Step3: photogenerated charge is collected: the positive electrode that all numbers are 1 being set to high level after X-ray starts irradiation, will be born Electrode is all set to amplitude negative level identical with the high level, and the collection of photogenerated charge, barn door are realized during exposure Charge-trapping process terminates after closing;
Step4: photogenerated charge transfer: after X-ray terminates exposure, start the transfer for carrying out photogenerated charge, the light in detector Raw charge is shifted between adjacent electrode in the form of charge packet under the control of electrode voltage, specific timing: at the t1 moment, number It is set as high level for 1 positive electrode, charge can be collected into the potential well under the positive electrode during exposure;At the t2 moment, compile Number it is set as 1/2 times of high level for 1 positive electrode, the positive electrode that number is 2 is set as high level, exists between two electrodes Potential barrier, the positive electrode that continuous flow direction number is 2 by the charge that the positive electrode that number is 1 in the process is collected;At the t3 moment, compile Number for 1 positive electrode under electronics will be fully transferred to number be 2 positive electrode under potential well in, the positive electrode that number is 3 is set It is set to high level;The rest may be inferred, until the photogenerated charge of collection to be successively transferred to the reading circuit positioned at the extreme side;
Step5-1: photogenerated charge packet transaction: being directed to power spectrum resolving, after electric charge transfer reading, conforms in order to obtain The power spectrum analysis result asked, the photogenerated charge generated in the semiconductor of different depth need to be grouped it is cumulative, charge grouping Form depends on the absorbing state of the spectral fragmentation situation and ray of X-ray to be resolved in the semiconductors;
Step5-2: photogenerated charge reconstruct grouping: optimal power spectrum analysis result in order to obtain, if the restructural charge grouping side of n kind Case is grouped scheme according to the n kind being previously set, adjusts charge packet under each electrode on the basis of Step5-1 is to charge processing Packet State, i.e. the group of charge packet subordinate time changes in each group and each group charge adds up again after the total amount of charge, and deposit respectively Respective accumulation result is stored up, after all n kind reconfiguration schemes are all carried out, terminates this charge reconstruct packet transaction step;
Step6: power spectrum parsing: scheme is grouped according to n kind and retrodicts by the total amount of each group photogenerated charge and parses X in each section The power spectrum dampening information of ray selects optimal parsing result reconstruction image.
5. restructural type X-ray energy spectrum detection method as claimed in claim 4, characterized in that segmentation power spectrum to be resolved has It is several, i.e., several groups the photogenerated charge sequence in semiconductor are combined, the X of corresponding energy section is made by the position of design charge grouping Ray fully absorbs in the semiconductor thickness.
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* Cited by examiner, † Cited by third party
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CN107884806B (en) * 2017-10-19 2020-05-08 天津大学 Dual-energy CT imaging-oriented X-ray energy spectrum detection and reconstruction analysis method
WO2019084702A1 (en) * 2017-10-30 2019-05-09 Shenzhen Genorivision Technology Co. Ltd. A lidar detector with high time resolution
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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1076546A (en) * 1993-03-18 1993-09-22 清华大学 Gas-ionization high energy x.r radiation imageable array detecting device
CN102903721A (en) * 2011-07-25 2013-01-30 群康科技(深圳)有限公司 X-ray image sensing element and sensing module
CN104024889A (en) * 2011-12-13 2014-09-03 皇家飞利浦有限公司 Radiation detector

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102216808B (en) * 2008-11-13 2014-04-02 皇家飞利浦电子股份有限公司 Radiation detector with an array of electrodes
JP6104004B2 (en) * 2013-03-21 2017-03-29 キヤノン株式会社 Radiation imaging system, computer and program

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1076546A (en) * 1993-03-18 1993-09-22 清华大学 Gas-ionization high energy x.r radiation imageable array detecting device
CN102903721A (en) * 2011-07-25 2013-01-30 群康科技(深圳)有限公司 X-ray image sensing element and sensing module
CN104024889A (en) * 2011-12-13 2014-09-03 皇家飞利浦有限公司 Radiation detector

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