CN105974460A - Reconstructible X ray power spectrum detection method and pixel unit structure of reconstructible X ray power spectrum detector - Google Patents
Reconstructible X ray power spectrum detection method and pixel unit structure of reconstructible X ray power spectrum detector Download PDFInfo
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Abstract
The invention relates to a reconstructible X ray power spectrum detection method and a pixel unit structure of a reconstructible X ray power spectrum detector, belongs to the field of semiconductor photoelectric detectors, and aims at solving the problem that a present power energy CT detector is insufficient in the energy distinguishing degree and improving the precision of power spectrum CT imaging. Attenuation information of X rays of different energy segments can be obtained via once exposure. The pixel unit structure, as a substrate part of a detector body, is used to receive X rays and convert photoelectric signals, and the substrate part is in a size in which all photons of X rays within a to-be-detected energy spectrum range are absorbed two surfaces of the substrate part include oxides of thermal oxide growth, and the substrate part is electrically insulated and isolated from electrodes via the oxides; the electrodes are connected to a time sequence control unit via metal leads, and charge packets are read out sequentially; and a light shield plate which is used to control exposure time of the X rays is provided. The detection method and pixel unit structure are mainly applied to design and manufacture of the semiconductor photoelectric detector.
Description
Technical field
The present invention relates to semiconductor photo detector field, particularly relate to the detection to medical X-ray power spectrum.
Background technology
The detector of conventional medical spiral CT (Computed Tomography, CT scan) is penetrated based on X
The average attenuation effect of line detects, and the image after reconstruction seriously be cannot be distinguished by human body internal phase by beam hardening effects
Like organizational structure.At present, along with the development of detector technology, power spectrum CT that material distinction is higher is increasingly becomed people
The focus studied.Power spectrum CT, based on the tissue difference to different photon energy absorption abilities, utilizes and organizes X-ray energy more
Attenuation characteristic carry out image reconstruction, be provided that image information more more than conventional CT.The key technology of power spectrum CT imaging is exactly
Utilize detector to obtain the X-ray of multiple kinds of energy dampening information in human body, there is the X-ray of high accuracy power spectrum analytic ability
Eds detector is the extremely important part of power spectrum CT.
At present, the medical treatment more common X-ray detector of power spectrum CT is indirect-type detector, mainly utilizes scintillation fluor body material
Material is converted into visible ray X-ray, then detects with visible-light detector.The method, can be inevitable in transformation process
Cause X-ray energy to lose, and the energy range of X-ray is indexed relatively low, as more in Medical power spectrum CT uses
The high energy of X-ray and low-energy component can only be analyzed by dual-energy detector, but also serious by beam hardening effects, very
The difficult practical medical demand meeting power spectrum CT utilizing multi-energy imaging.The present invention towards medical power spectrum CT practical application area,
Propose a kind of high-precision X-ray energy spectrum detector pixel structure, and propose a kind of reconfigurable X-ray based on this structure
Power spectrum layered probe method, can obtain the dampening information of the X-ray of multiple kinds of energy component by single exposure simultaneously, can be doctor
There is provided more parameter information with the imaging of power spectrum CT, fully meet the requirement to material qualitative and quantitative analysis of power spectrum CT.
Summary of the invention
For overcoming the deficiencies in the prior art, solve the problem that existing power spectrum CT detector energy discrimination is not enough, promote
The precision of power spectrum CT imaging, the present invention proposes a kind of high-precision X-ray energy spectrum detector pixel structure and corresponding power spectrum
Layered probe method.By single exposure, the dampening information of the X-ray obtaining multiple different-energy section can be resolved.Utilizing should
Detector pixel structure and can spectrum detecting method, it is possible to obtain higher resolution, more while patient bears amount of radiation reducing
High-precision clinical image.The technical solution used in the present invention is, restructural type X-ray energy spectrum detector pixel cellular construction,
Substrate portions as detector body has been used for the reception of X-ray and the conversion of photosignal, and substrate portions size is with entirely
The x-ray photon that portion absorbs in energy spectrum to be detected is advisable；Substrate portions upper surface is the oxide of thermal oxide growth, described
Oxide realizes the electric insulation isolation of substrate portions and electrode；Described electrode is polysilicon or metal material is made, and positive and negative right
Discrete should be arranged in substrate portions lower surface and oxide upper surface, the most all of anelectrode is distributed in same surface, all
Negative electrode be distributed in another surface；Described anelectrode is divided into some layers, every layer of anelectrode number by the adjacent relation that is arranged in order
Identical；If in described dried layer, first anelectrode of each layer is all connected to timing control unit by same plain conductor, institute
If second anelectrode stating each layer in dried layer is connected to timing control unit also through another root plain conductor, in each layer its
The connection of remaining electrode and timing control unit is by that analogy；Described timing control unit is by controlling adjacent electrode low and high level week
Phase property changes, it is achieved sequentially reading of charge packet；Being additionally provided with the dark slide for controlling the X-ray exposure time, dark slide is beaten
Opening X-ray and enter substrate portions, dark slide closedown X-ray is blocked and can not enter substrate portions.
The three-dimensional dimension of electrode, number and interelectrode spacing regard the size of probe substrate and the collection effect of photogenerated charge
Depending on rate, the requirement of photogenerated charge after sequentially the electrode of arrangement should meet collection exposure completely.
The constituent material of described substrate portions selects in lightly doped P-type silicon, or the quasiconductor such as cadmium-zinc-teiluride, cadmium telluride
A kind of.
After sequentially the electrode of arrangement should meet collection exposure completely, the requirement of photogenerated charge specifically refers to, and terminates in X-ray
After exposure, proceed by the transfer of photogenerated charge, in detector photogenerated charge under the control of electrode voltage with charge packet
Form shifts between adjacent electrode, concrete sequential: in the t1 moment, and the anelectrode of numbered 1 is set to high level, and electric charge can expose
Collect during light in the potential well under this anelectrode；In the t2 moment, the anelectrode of numbered 1 is set to the high level of 1/2 times, compiles
Number be 2 anelectrode be set to high level, there is potential barrier between two electrodes, the anelectrode of the most numbered 1 is collected
Electric charge will constantly flow to the anelectrode of numbered 2；Electronics under t3 moment, the anelectrode of numbered 1 will be fully transferred to
In potential well under the anelectrode of numbered 2, the anelectrode of numbered 3 is set to high level；The rest may be inferred, until the light that will collect
Raw electric charge transfers to be positioned at the reading circuit on limit successively.
Restructural type X-ray energy spectrum detection method, realizes by means of foregoing detection device pixel cell structure, and step is as follows:
Step1: detector resets: often complete the detection process of primary X-ray, and all needing resets resets detector, in order to open
Open X-ray beam detection next time；
Step2:X x ray exposure x: open x-ray shielding hood and be exposed, adjusts detector orientation, makes ray from detector
Lateral edges inject detector pixel cellular construction substrate portions, meet rebuild image request time after close dark slide, stop
The only irradiation of ray；
Step3: photogenerated charge is collected: after X-ray starts to irradiate, all anelectrodes of numbered 1 are set to high level,
Negative electrode is all set to the negative level that amplitude is identical with described high level, during exposing, realizes the collection of photogenerated charge, hide
After tabula rasa is closed, charge-trapping process terminates；
Step4: photogenerated charge shifts.After X-ray terminates exposure, proceed by the transfer of photogenerated charge, at detector
Interior photogenerated charge form with charge packet under the control of electrode voltage shifts between adjacent electrode, concrete sequential: in the t1 moment,
The anelectrode of numbered 1 is set to high level, and electric charge can be collected in the potential well under this anelectrode during exposing；When t2
Carving, the anelectrode of numbered 1 is set to the high level of 1/2 times, and the anelectrode of numbered 2 is set to high level, two electrodes it
Between there is potential barrier, the electric charge that the anelectrode of the most numbered 1 is collected will constantly flow to the anelectrode of numbered 2；At t3
In the moment, in the potential well that the electronics under the anelectrode of numbered 1 will be fully transferred under the anelectrode of numbered 2, numbered 3 just
Electrode is set to high level；The rest may be inferred, until the photogenerated charge of collection is transferred to be positioned at reading circuit on limit successively；
Step5-1: photogenerated charge packet transaction: for power spectrum resolving, after electric charge transfer reads, in order to be accorded with
It is cumulative that the photogenerated charge produced in closing the power spectrum analysis result required, the quasiconductor of different depth needs to carry out packet, and electric charge divides
The form of group depends on spectral fragmentation situation and the ray absorbing state in the semiconductors of X-ray to be resolved；
Step5-2: photogenerated charge reconstruct packet: in order to obtain the power spectrum analysis result of optimum, if n kind restructural electric charge divides
Prescription case, on the basis of electric charge is processed by Step5.1, according to the n kind packet scheme being previously set, adjusts electricity under each electrode
The group of the Packet State of pocket, i.e. charge packet subordinate time, changes in each group and is added up by each group of electric charge after the total amount of electric charge again, and point
Do not store respective accumulation result.After all of n kind reconfiguration scheme is all carried out, terminate this electric charge reconstruct packet transaction step
Suddenly；
Step6: power spectrum resolves: is grouped scheme according to n kind, by the total amount of each group of photogenerated charge, retrodicts and parse each district
Between the power spectrum dampening information of internal X-ray, select optimum analysis result to rebuild image.
Segmentation power spectrum to be resolved has several, will several groups of photogenerated charge sequential combination in quasiconductor, electric charge packet
Position fully absorbs in this semiconductor thickness with the X-ray of corresponding energy section and is advisable.
The feature of the present invention and providing the benefit that:
The present invention proposes a kind of high-precision X-ray energy spectrum detector pixel structure, and proposes one and utilize this to tie
The method of structure reconstruct detection X-ray energy spectrum information, it is achieved that the layered probe of X-ray energy spectrum.Through single exposure, can resolve
Obtain the X-ray energy spectrum dampening information of multiple segmentation；And precision can be resolved for different radiographic sources and different power spectrums to want
Asking, dynamic reconfigurable ground adjusts the packet of electric charge.This detection method not only reduces the radiation dose that patient bears, and more improves
The quality of power spectrum CT imaging, it is adaptable to the detection of the multi-power spectrum component of medical X-ray.
Accompanying drawing illustrates:
The voxel structure of X-ray energy spectrum detector proposed by the invention for Fig. 1.
The flow chart of Fig. 2 X-ray energy spectrum detection method.
Fig. 3 charge-trapping transfer timing figure.
Fig. 4 dot structure plane graph.
Electric charge Dynamic Packet schematic diagram in Fig. 5 quasiconductor.
Detailed description of the invention
When compound X-ray is through quasiconductor, owing to photoelectric effect, Compton effect and pair effect etc. act on, X-ray
(i.e. incident photon) will be absorbed and be produced photogenerated charge in the semiconductors, and the X-ray intensity of different-energy follows exponential damping
Rule, the X-ray of mental retardation will first be absorbed, and the X-ray absorption of high energy is slower.Present invention absorption based on above-mentioned X-ray is advised
Rule, it is proposed that a kind of marginal incident type X-ray energy spectrum detector pixel structure, and propose one and utilize this dot structure to detect
The method of X-ray segmentation spectral information.
The detector pixel structure specific embodiments that the present invention proposes is as follows:
Basic three dimension detector dot structure is as it is shown in figure 1,101 be wherein probe substrate part, and backing material can
To select lightly doped P-type silicon, it is also possible to being the quasiconductors such as the cadmium-zinc-teiluride of other suitable dimensions, cadmium telluride, it is as detector
Main body mainly complete the reception of X-ray and the conversion of photosignal, substrate dimension is all to absorb in energy spectrum to be detected
X-ray photon be advisable；In figure, 102 parts are the oxide of the suitable thickness of thermal oxide growth, mainly realize substrate and electrode
Electric insulation isolation；In figure, 103 parts are the electrode of polysilicon or metal material, and its discrete arrangement mode is as it can be seen, each
Electrode is all connected to timing control unit 105 by plain conductor, and timing control unit is by controlling adjacent electrode low and high level
Cyclically-varying, it is achieved sequentially reading of charge packet.The three-dimensional dimension of electrode, number and interelectrode spacing regard probe substrate
Size and photogenerated charge collection efficiency depending on, order arrangement electrode should meet completely collect exposure after photogenerated charge want
Ask；104 parts are that backplate, size and distribution situation refer to 103 electrode parts；106 structures are dark slide, Main Function
It it is the time of exposure controlling X-ray.More than for the proposed by the invention spy being applicable to reconfigurable X-ray energy spectrum detection method
Survey device dot structure.
Based on above-mentioned detector pixel structure, the flow process of the X-ray energy spectrum detection method that the present invention proposes as in figure 2 it is shown,
Specific embodiments is as follows:
Step1: detector resets.Often completing the detection process of primary X-ray, all needing resets resets detector, in order to open
Open X-ray beam detection next time.The mode by whole electrode potential zero setting can be used to reset, but be not limited only to this kind of method.
Step2:X x ray exposure x.Open x-ray shielding hood to be exposed, adjust detector orientation, make ray from detector
Lateral edges inject probe substrate 101 part, as it is shown in figure 1, meet rebuild image request time after close dark slide, stop
The only irradiation of ray.
Step3: photogenerated charge is collected.After X-ray starts to irradiate, the electrode of all numbered V1 is set to high level (this
Place takes as a example by high level is 5v, but is not limited only to this level standard), backplate Vss is all set to-5v and (but is not limited only to
This level standard), during exposing, realize the collection of photogenerated charge, after dark slide is closed, charge-trapping process terminates.
Step4: photogenerated charge shifts.After X-ray terminates exposure, proceed by the transfer of photogenerated charge, at detector
Interior photogenerated charge mainly under the control of electrode voltage form with charge packet shift between adjacent electrode.This sentences three-phase transfer
As a example by logic (but being not limited only to the electric charge branch mode of this logic), concrete sequential as shown in Figure 2: in the t1 moment, v1 electrode sets
Being set to high level, electric charge can be collected in the potential well under v1 during exposing；In the t2 moment, v1 is set to the high level of 1/2 times,
V2 electrode is set to high level, there is potential barrier between two electrodes, and the electric charge that v1 collects in the process will constantly flow to v2；?
In the t3 moment, in the potential well that the electronics under v1 electrode will be fully transferred under v2 electrode, v3 is set to high level；The t4 moment, v2 electricity
Electric charge under extremely constantly shifts to v3, is fully transferred in v3 electrode potential well to t5 moment v2 electric charge.So far complete the completeest
Three whole phase control charge transfer processes.Repeat this step, the photogenerated charge of collection can be transferred to the reading of low order end successively
Circuit.
Step5-1: photogenerated charge packet transaction.For power spectrum resolving, after electric charge transfer reads, in order to be accorded with
It is cumulative that the photogenerated charge produced in closing the power spectrum analysis result required, the quasiconductor of different depth needs to carry out packet.Electric charge divides
The form of group depends on spectral fragmentation situation and the ray absorbing state in the semiconductors of X-ray to be resolved.Ordinary circumstance
Under, segmentation power spectrum to be resolved has several, will several groups of photogenerated charge sequential combination in quasiconductor, the position of electric charge packet with
The X-ray of corresponding energy section fully absorbs in this semiconductor thickness is advisable.
The reconstruct packet of Step5-2: photogenerated charge.In order to obtain the power spectrum analysis result of optimum, the present invention is directed to be detected
The radiation absorption characteristic of object, has been provided in advance the restructural electric charge packet scheme that n kind adapts therewith.At Step5.1 to electricity
On the basis of lotus processes, according to the n kind packet scheme being previously set, adjust the Packet State of charge packet under each electrode, i.e. electricity
The group of pocket subordinate time, changes and is added up by each group of electric charge after the total amount of electric charge in each group again and store respective cumulative knot respectively
Really.After all of n kind reconfiguration scheme is all carried out, terminate this electric charge reconstruct packet transaction step；
After x ray exposure x, for the photogenerated charge bag in each potential well, carry out sequential packet according to n kind presupposed solution, profit
Solve one section of ray energy spectrum with the electric charge in potential well under the multiple electrode of continuous print, often organize the difference of charge packet quantity, also just anticipate
Taste the energy spectral coverage solved and be there are differences.
Step6: power spectrum resolves.It is grouped scheme according to n kind, by the total amount of each group of photogenerated charge, retrodicts and parse each district
Between the power spectrum dampening information of internal X-ray, select optimum analysis result to rebuild image.
By above six steps, just may utilize detector pixel structure proposed by the invention and complete medical X-ray segmentation energy
The reconstruct detection of spectrum information.
X-ray energy spectrum CT detector pixel structural plan structure proposed by the invention as shown in Figure 4, optimum implementation
As a example by the Si quasiconductor of a length of 5cm, thickness TH and width Width all takes 0.5mm, deposited oxide 0.005mm on it
SiO2, last etches polycrystalline silicon and complete electrode interconnection, wherein the thickness of polysilicon electrode is 0.01mm, and electrode length is
0.4mm, electrode width is 0.1mm, and adjacent electrode is spaced apart 0.001mm.Detector pixel structure utilizes buried channel technique reduction table
The dark current that face trap or defect produce.If X-ray energy value to be detected should exceed more than 100Kev, the length of detector
5cm.The panel detector structure that the present invention proposes is not limited to that kind of backing material and distribution of electrodes scheme, it is also possible to employing CZT,
Other semi-conducting materials such as CdTe.
Described in X-ray energy spectrum detection process as above six steps based on this structure, mainly include pixel-reset, X-ray exposure,
Photogenerated charge is collected, photogenerated charge shifts, electric charge reconstruct packet transaction and power spectrum parsing etc..This sentences three sections of continuous energy to be resolved
Spectrum information 0-20Kev, as a example by 20-40Kev, 40-60Kev, after X-ray exposure, the ray of different-energy is in the difference of quasiconductor
The degree of depth produces the photogenerated charge that differs of quantity, the potential well under electrode complete the collection of each layer charge, and according to as shown in Figure 3
Electric charge transfer timing realizes the layering of electric charge and reads；With reference to X-ray segmentation spectral information to be resolved and radiation absorption rule, will
Photogenerated charge in quasiconductor is divided into three groups in order, as it is shown in figure 5, three groups are respectively 0-0.5cm, 0.5-2.0cm, 2.0-
Each section of interior photogenerated charge sum of 3.5cm.The precision resolved according to power spectrum and image quality, it is also possible to according still further to set in advance
5 kinds of packet schemes, dynamically adjust the Packet State (i.e. adjusting the group time of charge packet subordinate) of charge packet under 5 sub-electrodes, adjust every time
All the electric charge in each group added up after whole and store.After all of 5 kinds of reconfiguration schemes are all carried out, terminate this process,
The segmentation spectral information of X-ray of being retrodicted out by the photogenerated charge sum in the quasiconductor of optimal thickness afterwards.The present invention provides
Eds detector dot structure and the energy spectrum detecting method adapted with it, be provided that more multi-component X-ray energy decay letter
Breath, can be applied to medical power spectrum CT imaging field.
Claims (6)
1. a restructural type X-ray energy spectrum detector pixel cellular construction, is characterized in that, as the substrate portion of detector body
Demultiplexing is in the conversion of the reception and photosignal completing X-ray, and substrate portions size is all to absorb in energy spectrum to be detected
X-ray photon be advisable；Substrate portions upper surface is the oxide of thermal oxide growth, and described oxide realizes substrate portions and electricity
The electric insulation isolation of pole；Described electrode is polysilicon or metal material is made, and positive and negative correspondence is discrete is arranged under substrate portions
Surface and oxide upper surface, the most all of anelectrode is distributed in same surface, and all of negative electrode is distributed in another surface；
Described anelectrode is divided into some layers by the adjacent relation that is arranged in order, and every layer of anelectrode number is identical；If each layer in described dried layer
First anelectrode is all connected to timing control unit by same plain conductor, if in described dried layer second of each layer just
Electrode is connected to timing control unit also through another root plain conductor, remaining electrode and the company of timing control unit in each layer
Connect by that analogy；Described timing control unit is by controlling adjacent electrode low and high level cyclically-varying, it is achieved charge packet suitable
Sequence reads；Being additionally provided with the dark slide for controlling the X-ray exposure time, dark slide is opened X-ray and is entered substrate portions, shading
Plate closedown X-ray is blocked and can not enter substrate portions.
2. restructural type X-ray energy spectrum detector pixel cellular construction as claimed in claim 1, is characterized in that, the three of electrode
Dimension size, number and interelectrode spacing are depending on the size of probe substrate and the collection efficiency of photogenerated charge, and order is arranged
Electrode should meet and collect the requirement of photogenerated charge after exposure completely.
3. restructural type X-ray energy spectrum detector pixel cellular construction as claimed in claim 1, is characterized in that, described substrate
The constituent material of part selects the one in lightly doped P-type silicon, cadmium-zinc-teiluride or cadmium telluride quasiconductor.
4. restructural type X-ray energy spectrum detector pixel cellular construction as claimed in claim 1, is characterized in that, order arrangement
Electrode should meet collect exposure completely after the requirement of photogenerated charge specifically refer to, after X-ray terminates exposure, proceed by light
The transfer of raw electric charge, in detector, photogenerated charge form with charge packet under the control of electrode voltage turns between adjacent electrode
Moving, concrete sequential: in the t1 moment, the anelectrode of numbered 1 is set to high level, and electric charge can collect this positive electricity during exposing
In potential well under extremely；In the t2 moment, the anelectrode of numbered 1 is set to the high level of 1/2 times, and the anelectrode of numbered 2 is arranged
For high level, there is potential barrier between two electrodes, the electric charge that the anelectrode of the most numbered 1 is collected will constantly flow to compile
It number it is the anelectrode of 2；Electronics under t3 moment, the anelectrode of numbered 1 will be fully transferred under the anelectrode of numbered 2
In potential well, the anelectrode of numbered 3 is set to high level；The rest may be inferred, puts in place until being shifted successively by the photogenerated charge of collection
Reading circuit on limit.
5. a restructural type X-ray energy spectrum detection method, is characterized in that, by means of detector pixel list described in claim 1
Meta structure realizes, and step is as follows:
Step1: detector resets: often complete the detection process of primary X-ray, and all needing resets resets detector, in order under unlatching
X-ray beam detection once；
Step2:X x ray exposure x: open x-ray shielding hood and be exposed, adjusts detector orientation, makes the ray side from detector
Detector pixel cellular construction substrate portions is injected at edge, closes dark slide, stop penetrating after meeting the time rebuilding image request
The irradiation of line；
Step3: photogenerated charge is collected: all anelectrodes of numbered 1 are set to after X-ray starts to irradiate high level, will be negative
Electrode is all set to the negative level that amplitude is identical with described high level, realizes the collection of photogenerated charge, dark slide during exposing
After closedown, charge-trapping process terminates；
Step4: photogenerated charge shifts.After X-ray terminates exposure, proceed by the transfer of photogenerated charge, light in detector
Give birth to the electric charge form with charge packet under the control of electrode voltage to shift between adjacent electrode, concrete sequential: in the t1 moment, numbering
Be 1 anelectrode be set to high level, electric charge can be collected in the potential well under this anelectrode during exposing；In the t2 moment, compile
Number be 1 anelectrode be set to the high level of 1/2 times, the anelectrode of numbered 2 is set to high level, exists between two electrodes
Potential barrier, the electric charge that the anelectrode of the most numbered 1 is collected will constantly flow to the anelectrode of numbered 2；In the t3 moment, compile
In the potential well that number to be electronics under the anelectrode of 1 will be fully transferred under the anelectrode of numbered 2, the anelectrode of numbered 3 sets
It is set to high level；The rest may be inferred, until the photogenerated charge of collection is transferred to be positioned at reading circuit on limit successively；
Step5-1: photogenerated charge packet transaction: for power spectrum resolving, after electric charge transfer reads, in order to be conformed to
The power spectrum analysis result asked, it is cumulative that the photogenerated charge produced in the quasiconductor of different depth needs to carry out packet, electric charge packet
Form depends on spectral fragmentation situation and the ray absorbing state in the semiconductors of X-ray to be resolved；
Step5-2: photogenerated charge reconstruct packet: in order to obtain the power spectrum analysis result of optimum, if n kind restructural electric charge packet side
Case, on the basis of electric charge is processed by Step5-1, according to the n kind packet scheme being previously set, adjusts charge packet under each electrode
Packet State, i.e. the group time of charge packet subordinate, changes in each group and is added up by each group of electric charge after the total amount of electric charge again, and deposit respectively
Store up respective accumulation result, after all of n kind reconfiguration scheme is all carried out, terminate this electric charge reconstruct packet transaction step；
Step6: power spectrum resolves: is grouped scheme according to n kind, by the total amount of each group of photogenerated charge, retrodicts and parse X in each interval
The power spectrum dampening information of ray, selects optimum analysis result to rebuild image.
6. restructural type X-ray energy spectrum detection method as claimed in claim 5, is characterized in that, segmentation power spectrum to be resolved has
Several, will several groups of photogenerated charge sequential combination in quasiconductor, the position of electric charge packet with the X-ray of corresponding energy section at this
Fully absorb in semiconductor thickness and be advisable.
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107765291A (en) * | 2017-09-11 | 2018-03-06 | 天津大学 | The signal read-out device and method of X-ray detector |
| CN107884806A (en) * | 2017-10-19 | 2018-04-06 | 天津大学 | X-ray energy spectrum detection and reconstruct analytic method towards dual intensity CT imagings |
| CN109044386A (en) * | 2018-06-13 | 2018-12-21 | 苏州西奇狄材料科技有限公司 | The purposes of radiation detector based on tellurium-zincium-cadmium crystal |
| CN109490944A (en) * | 2018-11-22 | 2019-03-19 | 天津大学 | The energy resolved method of x-ray eds detector |
| WO2019084702A1 (en) * | 2017-10-30 | 2019-05-09 | Shenzhen Genorivision Technology Co. Ltd. | A lidar detector with high time resolution |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1076546A (en) * | 1993-03-18 | 1993-09-22 | 清华大学 | Gas-ionization high energy x.r radiation imageable array detecting device |
| WO2010055457A2 (en) * | 2008-11-13 | 2010-05-20 | Koninklijke Philips Electronics N.V. | Radiation detector with an array of electrodes |
| CN102903721A (en) * | 2011-07-25 | 2013-01-30 | 群康科技(深圳)有限公司 | X-ray image sensing element and sensing module |
| CN104024889A (en) * | 2011-12-13 | 2014-09-03 | 皇家飞利浦有限公司 | Radiation detector |
| US20140284491A1 (en) * | 2013-03-21 | 2014-09-25 | Canon Kabushiki Kaisha | Radiation image pickup system |
-
2016
- 2016-05-11 CN CN201610311377.8A patent/CN105974460B/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1076546A (en) * | 1993-03-18 | 1993-09-22 | 清华大学 | Gas-ionization high energy x.r radiation imageable array detecting device |
| WO2010055457A2 (en) * | 2008-11-13 | 2010-05-20 | Koninklijke Philips Electronics N.V. | Radiation detector with an array of electrodes |
| CN102903721A (en) * | 2011-07-25 | 2013-01-30 | 群康科技(深圳)有限公司 | X-ray image sensing element and sensing module |
| CN104024889A (en) * | 2011-12-13 | 2014-09-03 | 皇家飞利浦有限公司 | Radiation detector |
| US20140284491A1 (en) * | 2013-03-21 | 2014-09-25 | Canon Kabushiki Kaisha | Radiation image pickup system |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107765291A (en) * | 2017-09-11 | 2018-03-06 | 天津大学 | The signal read-out device and method of X-ray detector |
| CN107884806A (en) * | 2017-10-19 | 2018-04-06 | 天津大学 | X-ray energy spectrum detection and reconstruct analytic method towards dual intensity CT imagings |
| CN107884806B (en) * | 2017-10-19 | 2020-05-08 | 天津大学 | Dual-energy CT imaging-oriented X-ray energy spectrum detection and reconstruction analysis method |
| WO2019084702A1 (en) * | 2017-10-30 | 2019-05-09 | Shenzhen Genorivision Technology Co. Ltd. | A lidar detector with high time resolution |
| US11002852B2 (en) | 2017-10-30 | 2021-05-11 | Shenzhen Genorivision Technology Co., Ltd. | LIDAR detector with high time resolution |
| CN109044386A (en) * | 2018-06-13 | 2018-12-21 | 苏州西奇狄材料科技有限公司 | The purposes of radiation detector based on tellurium-zincium-cadmium crystal |
| CN109490944A (en) * | 2018-11-22 | 2019-03-19 | 天津大学 | The energy resolved method of x-ray eds detector |
| CN109490944B (en) * | 2018-11-22 | 2022-11-04 | 天津大学 | Energy analysis method of x-ray energy spectrum detector |
| CN115020531A (en) * | 2022-06-02 | 2022-09-06 | 上海奕瑞光电子科技股份有限公司 | Silicon drift detector |
| CN115020531B (en) * | 2022-06-02 | 2023-12-01 | 上海奕瑞光电子科技股份有限公司 | Silicon drift detector |
| CN116934837A (en) * | 2023-09-13 | 2023-10-24 | 上海超群检测科技股份有限公司 | Object detection processing method, device, system, electronic equipment and storage medium |
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