CN105958162B - A kind of microwave low-pass filter with semi arch groove structure - Google Patents
A kind of microwave low-pass filter with semi arch groove structure Download PDFInfo
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- CN105958162B CN105958162B CN201610420528.3A CN201610420528A CN105958162B CN 105958162 B CN105958162 B CN 105958162B CN 201610420528 A CN201610420528 A CN 201610420528A CN 105958162 B CN105958162 B CN 105958162B
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- semi arch
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/2002—Dielectric waveguide filters
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Abstract
The invention discloses a kind of microwave low-pass filters with semi arch groove structure.Including dielectric-slab (1), a surface of dielectric-slab (1) is equipped with metal micro-strip (2), another surface is equipped with metal (3)；The metal micro-strip (2) includes micro-strip waveguide segment (4), and micro-strip waveguide segment (4) is connect through changeover portion (5) with artificial surface phasmon section (6)；The top edge of the micro-strip waveguide segment (4) is exponential type curve (9), and exponential type curve (9) is connect with the top edge of changeover portion (5)；Semicircle arc fluting (7) is distributed in the artificial surface phasmon section (6).The present invention has the characteristics that low transmission loss, avoids electromagnetic field strong reflection and anti-electromagnetic interference capability strong.
Description
Technical field
The present invention relates to a kind of filter of communication field, especially a kind of microwave with semi arch groove structure is low
Bandpass filter.
Background technology
In the current big data epoch, as the demand of information is in explosive growth, field of mobile communication requires to manufacture
Go out the higher microwave device of integrated level, however as the continuous diminution of high-frequency integrated circuit size, technically occurs a series of
Problem, such as certain degree is arrived when the size of microwave device is small, the electromagnetic interference noise of device, RC retardation ratio etc., which reaches capacity, to be led
Device job insecurity is caused, therefore existing microwave device has not adapted to the development of current extensive microwave integrated circuit.
Invention content
The object of the present invention is to provide a kind of microwave low-pass filters with semi arch groove structure.The present invention has
There is low transmission loss, avoid electromagnetic field strong reflection and anti-electromagnetic interference capability strong.
Technical scheme of the present invention：A kind of microwave low-pass filter with semi arch groove structure, including dielectric-slab are situated between
One surface of scutum is equipped with metal micro-strip, another surface is equipped with metal；The metal micro-strip includes micro-strip wave
Section is led, micro-strip waveguide segment is connect through changeover portion with artificial surface phasmon section；The top edge of the micro-strip waveguide segment is to refer to
The top edge of number type curve, exponential type curve and changeover portion connects；Semicircle is distributed in the artificial surface phasmon section
Arc fluting.
In microwave low-pass filter above-mentioned with semi arch groove structure, the width of rebate of the semicircle arc fluting
The value of w1 is 3~8mm, and the value of the depth w2 of semicircle arc fluting is 1.5~4mm, and the grooved cycle p of semicircle arc fluting is 3
~8mm.
In microwave low-pass filter above-mentioned with semi arch groove structure, the exponential type curve meet equation y=
u1+u*(exp(k*x/(l1+l2)) -1)/(exp (k) -1), wherein u1 is exponential curve position parameter, and value is 1 ~ 10mm,
U, k are form factor, and the value of u is 0.5 ~ 4mm, and the value of k is 2 ~ 30mm；l1And l2Micro-strip waveguide segment length is indicated respectively
And transition section length.
In microwave low-pass filter above-mentioned with semi arch groove structure, the top edge on metal ground is ellipse
Curve, elliptic curve meet equation；Wherein a is elliptic curve short axle half
Diameter, value are 1~12mm；B1 is the ordinate at top edge elliptic curve center, and value is 0.1~15mm；W is oval bent
Line position coefficient, value are 5~15mm；l1For the length of micro-strip waveguide segment, value is 5~15mm, l2For the length of changeover portion
Degree, value are 15~35mm, l3For the length of artificial surface phasmon section, value is 60~75mm.
In microwave low-pass filter above-mentioned with semi arch groove structure, the lower edge on metal ground is ellipse
Curve, elliptic curve meet equation, b is lower edge elliptic curve center
Ordinate, value are 0.1~5mm.
In microwave low-pass filter above-mentioned with semi arch groove structure, the changeover portion（5）It is equipped with depth
The semicircle arc fluting gradually deepened（7）.
Compared with prior art, the present invention sets the top edge of micro-strip waveguide segment to exponential type curve, with this configuration,
It realizes micro-strip waveguide segment with the good of changeover portion to be connected, effectively prevents electromagnetic resistivity mutation, and then be substantially reduced because of mutation
And there is strong microwave electric field reflection, avoiding output end electromagnetic field there are deep fades, further reduced electromagnetic field
Transmission loss.Present invention semicircle arc fluting equipped with depth gradual change also on changeover portion further realizes standard with this configuration
Transition of the TEM mode to SSPPs patterns reduces microwave electric field reflection.In addition to this, the present invention sets the top edge on metal ground to
Meet equationElliptic curve, lower edge meets equation；With this configuration, impedance and the pattern match that can realize electromagnetic field, fill
Divide and reduces because strong microwave electric field reflection occur in electromagnetic field mode and impedance mismatch.Applicant had found by many experiments,
When a is 1~12mm, b1 is 0.1~15mm, w is 5~15mm, l in the curve of elliptic equation1For 5~15mm, l2For 15~
35mm, l3For 60~75mm, when b is 0.1~5mm, the reflection of microwave electric field is minimum.
Semicircle arc fluting is distributed in the artificial surface phasmon section of the present invention；With this configuration so that electromagnetic field exists
It is bound in semi arch groove vicinity when transmission, occurs because spacing is too small when thus greatly reducing plurality of transmission lines transmission
Electromagnetic interference so that anti-interference ability greatly enhances, while also enhancing the stability when work of high density microwave integrated circuit,
Moreover, because anti-electromagnetic interference capability greatly enhances, between the present invention can also reduce between the metal micro-strip of microwave integrated circuit
Away to realize the miniaturization of device, thus the development of current extensive microwave integrated circuit can be better adapted to.The present invention can also
Regulate and control the cutoff frequency and magnetic distribution of microwave transmission line by adjusting the geometric dimension of semicircle arc fluting, while adjusting electricity
The constraint effect of magnetic wave, applicant have found after carrying out a large number of experiments, when w1 is 3~8mm, w2 is 1.5~4mm, p is 3~8mm
When, semicircle arc fluting has constraint effect well to electromagnetic field.
In order to preferably prove that beneficial effects of the present invention, application have carried out following experiment：Applicant, which designs one, to be had
The microwave low-pass filter sample of semi arch groove structure, the parameter such as table 1 of sample.
1 microwave filter sample each section parameter (unit of table：mm)
The dielectric-slab of the sample uses dielectric constant for 2.65 substrate, has through time domain to the filtering curve of the sample
Difference Calculation is limited as shown in figure 3, S1 in Fig. 3,1 is filter reflection coefficients, and S2,1 is filter transfer coefficient, which is low
Pass filter, centre frequency 6.377GHz, insertion loss is 0.9dB at this, and -3dB passbands are direct current to 12.663GHz,
Sample is less than -10.0dB in entire passband reflection coefficient, and ripple shake is less than 0.68dB.
Design one is free of changeover portion l2Comparison filter, the dielectric constant of dielectric-slab is all 2.65, other structures
Parameter is with reference to table 1；The coverage diagram of the comparison filter is calculated through Fdtd Method, result of calculation is as shown in Figure 4.
It is learnt by Fig. 4, the transmission loss of sample of the transmission loss than changeover portion is arranged of the comparison filter is big, and in passband
Reflectance factor starts to substantially exceed -10dB after 6GHz.By Fig. 3 and Fig. 4 comparisons it is found that the semicircle arc fluting of setting depth gradual change
Changeover portion can effectively improve transmission and the reflection characteristic of sample.
Fig. 5 be sample in 6GHz band operations, the distribution map of the electric field of semi arch groove vicinity normal direction can by figure
See, electric field is mainly bound by semi arch groove vicinity, spreads very little.
Description of the drawings
Fig. 1 is the positive structure schematic of the present invention；
Fig. 2 is the structure schematic diagram of the present invention；
Fig. 3 is the S parameter curve graph of sample；
Fig. 4 is the S parameter curve graph for the filter for not using changeover portion；
Fig. 5 is semicircle arc fluting surrounding normal direction distribution map of the electric field of the filter sample in 6GHz band operations.
Label in attached drawing be：1- dielectric-slabs, 2- metal micro-strips, 3- metals, 4- micro-strip waveguide segments, 5- changeover portions, 6-
Artificial surface phasmon section, 7- semicircle arc flutings, 8- elliptic curves, 9- exponential type curves.
Specific implementation mode
The present invention is further illustrated with reference to the accompanying drawings and examples, but be not intended as to the present invention limit according to
According to.
Embodiment.A kind of microwave low-pass filter with semi arch groove structure is constituted as illustrated in fig. 1 and 2, including is situated between
Scutum 1, a surface of dielectric-slab 1 are equipped with metal micro-strip 2, another surface equipped with metal 3；The metal micro-strip
2 include micro-strip waveguide segment 4, and micro-strip waveguide segment 4 is connect through changeover portion 5 with artificial surface phasmon section 6；The micro-strip waveguide
The top edge of section 4 is exponential type curve 9, and exponential type curve 9 is connect with the top edge of changeover portion 5；Described artificial surface etc. from
Semicircle arc fluting 7 is distributed in excimer section 6.
In microwave low-pass filter above-mentioned with semi arch groove structure, the slot opening of the semicircle arc fluting 7
The value for spending w1 is 3~8mm, and the value of the depth w2 of semicircle arc fluting 7 is 1.5~4mm, the grooved cycle p of semicircle arc fluting 7
For 3~8mm.
Exponential type curve 9 above-mentioned meets equation y=u1+u* (exp (k*x/ (l1+l2)) -1)/(exp (k) -1), wherein u1
For exponential curve position parameter, value is 1 ~ 10mm, and u, k are form factor, and the value of u is 0.5 ~ 4mm, and the value of k is 2
~30mm；l1And l2Micro-strip waveguide segment length and transition section length are indicated respectively.
Metal above-mentioned 3 top edge be elliptic curve 8, elliptic curve 8 meets equation；Wherein a is 8 minor axis radius of elliptic curve, and value is 1~12mm；b1
For the ordinate at top edge elliptic curve center, value is 0.1~15mm；W is 8 position parameter of elliptic curve, value 5
~15mm；l1For the length of micro-strip waveguide segment, value is 5~15mm, l2For the length of changeover portion 5, value is 15~
35mm, l3For the length of artificial surface phasmon section 6, value is 60~75mm.
Metal above-mentioned 3 lower edge be elliptic curve 8, elliptic curve 8 meets equation, b be lower edge elliptic curve center ordinate, value be 0.1~
5mm。
Changeover portion 5 above-mentioned is equipped with the semicircle arc fluting 7 that depth gradually deepens.
The operation principle of the present invention：The electromagnetic field of Quasi-TEM mode is transferred to changeover portion 5 by the micro-strip waveguide segment 4 on the left side,
Gradually fade to the electromagnetic field of SSPPs patterns in changeover portion 5, and in changeover portion 5 Quasi-TEM mode and SSPPs patterns electromagnetism
Field coexists, and when electromagnetic field reaches artificial surface phasmon section 6, is fully converted to the electromagnetic field of SSPPs patterns, and artificial
Surface phasmon section 6 is transmitted, and SSPPs patterns electromagnetic field passes through TEM moulds subject to the changeover portion conversion on the right again after transmission
The electromagnetic field of formula is exported by the micro-strip waveguide segment on the right.When the pattern of electromagnetic field electromagnetic field in the propagation of micro-strip waveguide segment 4, this section
For Quasi-TEM mode, the pattern electromagnetic field is with being bound in micro-strip waveguide segment 4 and metal in the dielectric-slab between 3；It is passed in changeover portion 5
Sowing time, Quasi-TEM mode coexists with SSPPs patterns in the section, and wherein Quasi-TEM mode electromagnetic field is bound in changeover portion 5 and metal
In dielectric-slab between ground 3, SSPPs pattern electromagnetic fields are bound in around semicircle arc fluting 7；In l3When being propagated, in the section
For SSPPs patterns, which is bound in around semicircle arc fluting 7.
Claims (6)
1. a kind of microwave low-pass filter with semi arch groove structure, it is characterised in that：Including dielectric-slab（1）, dielectric-slab
（1）A surface be equipped with metal micro-strip（2）, another surface is equipped with metal（3）；The metal micro-strip（2）Packet
Include micro-strip waveguide segment（4）, micro-strip waveguide segment（4）Through changeover portion（5）With artificial surface phasmon section（6）Connection；Described is micro-
Band waveguide segment（4）Top edge be exponential type curve（9）, exponential type curve（9）With changeover portion（5）Top edge connection；It is described
Artificial surface phasmon section（6）On semicircle arc fluting is distributed with（7）.
2. the microwave low-pass filter according to claim 1 with semi arch groove structure, it is characterised in that：Described
Semicircle arc fluting（7）Width of rebate w1 value be 3~8mm, semicircle arc fluting（7）Depth w2 value be 1.5~
4mm, semicircle arc fluting（7）Grooved cycle p be 3~8mm.
3. the microwave low-pass filter according to claim 1 or 2 with semi arch groove structure, it is characterised in that：Institute
The exponential type curve stated（9）Meet equation y=u1+u* (exp (k*x/ (l1+l2)) -1)/(exp (k) -1), wherein u1 is that index is bent
Line position coefficient, value are 1 ~ 10mm, and u, k are form factor, and the value of u is 0.5 ~ 4mm, and the value of k is 2 ~ 30mm；l1
And l2Micro-strip waveguide segment length and transition section length are indicated respectively.
4. the microwave low-pass filter according to claim 1 or 2 with semi arch groove structure, it is characterised in that：Institute
The metal stated（3）Top edge be elliptic curve（8）, elliptic curve（8）Meet equation；Wherein a is elliptic curve（8）Minor axis radius, value are 1~12mm；b1
For the ordinate at top edge elliptic curve center, value is 0.1~15mm；W is elliptic curve（8）Position parameter, value
For 5~15mm；l1For the length of micro-strip waveguide segment, value is 5~15mm, l2For changeover portion（5）Length, value 15
~35mm, l3For artificial surface phasmon section（6）Length, value be 60~75mm.
5. the microwave low-pass filter according to claim 4 with semi arch groove structure, it is characterised in that：Described
Metal（3）Lower edge be elliptic curve（8）, elliptic curve（8）Meet equation, b be lower edge elliptic curve center ordinate, value be 0.1~
5mm。
6. the microwave low-pass filter according to claim 1 or 2 with semi arch groove structure, it is characterised in that：Institute
The changeover portion stated（5）It is equipped with the semicircle arc fluting that depth gradually deepens（7）.
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| CN201610420528.3A CN105958162B (en) | 2016-06-15 | 2016-06-15 | A kind of microwave low-pass filter with semi arch groove structure |
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| CN105958162B true CN105958162B (en) | 2018-11-09 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106374176B (en) * | 2016-09-27 | 2019-06-04 | 东南大学 | The double-deck transmission circuit and multifunction device of artificial surface plasmon |
| CN106785267A (en) * | 2017-01-04 | 2017-05-31 | 梧州学院 | A kind of bandwidth adjustable microwave wave filter with elliptic arc tongue structure |
| CN106785260A (en) * | 2017-01-04 | 2017-05-31 | 梧州学院 | A kind of wide-band microwave bandpass filter |
| CN106785264A (en) * | 2017-01-04 | 2017-05-31 | 梧州学院 | A kind of sawtooth grooves microwave band-pass filter |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103022601A (en) * | 2012-12-24 | 2013-04-03 | 中国计量学院 | Arc-groove THz-wave filter |
| CN104810578A (en) * | 2015-05-12 | 2015-07-29 | 中国矿业大学 | U-shaped slot type artificial surface plasmonband elimination filter |
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2016
- 2016-06-15 CN CN201610420528.3A patent/CN105958162B/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103022601A (en) * | 2012-12-24 | 2013-04-03 | 中国计量学院 | Arc-groove THz-wave filter |
| CN104810578A (en) * | 2015-05-12 | 2015-07-29 | 中国矿业大学 | U-shaped slot type artificial surface plasmonband elimination filter |
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Granted publication date: 20181109 Termination date: 20200615 |