CN105958162A - Microwave low-pass filter with semi-circular-arc groove structure - Google Patents
Microwave low-pass filter with semi-circular-arc groove structure Download PDFInfo
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- CN105958162A CN105958162A CN201610420528.3A CN201610420528A CN105958162A CN 105958162 A CN105958162 A CN 105958162A CN 201610420528 A CN201610420528 A CN 201610420528A CN 105958162 A CN105958162 A CN 105958162A
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- semi arch
- arch groove
- pass filter
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/2002—Dielectric waveguide filters
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Abstract
The invention discloses a microwave low-pass filter with a semi-circular-arc groove structure. The microwave low-pass filter comprises a dielectric plate (1), wherein a metal microstrip (2) is arranged on one surface of the dielectric plate (1) while a metal ground (3) is arranged on the other surface; the metal microstrip (2) comprises a microwave waveguide section (4); the microwave waveguide section (4) is connected with an artificial surface plasmon section (6) through a transitional section (5); an index type curve (9) is arranged on the upper edge of the microwave waveguide section (4); the index type curve (9) is connected with the upper edge of the transitional section (5); and semi-circular-arc grooves (7) are formed in the artificial surface plasmon section (6). The microwave low-pass filter has the advantages of low transmission loss, capability of avoiding electromagnetic intense reflection, and high anti-electromagnetic interface capability.
Description
Technical field
The present invention relates to the wave filter of a kind of communication field, a kind of microwave with semi arch groove structure is low
Bandpass filter.
Background technology
Current big data age, along with the demand of information is explosive growth, field of mobile communication requires to manufacture
Go out the higher microwave device of integrated level, however as constantly reducing of high-frequency integrated circuit size, technically occur in that a series of
Problem, such as little to certain degree, the electromagnetic interference noise of device when the size of microwave device, RC delay etc. reaches capacity and leads
Causing device job insecurity, the most existing microwave device does not the most adapt to the development of current extensive microwave integrated circuit.
Summary of the invention
It is an object of the invention to, it is provided that a kind of microwave low-pass filter with semi arch groove structure.The present invention has
There is low transmission loss, avoid electromagnetic field strong reflection and the strong feature of anti-electromagnetic interference capability.
Technical scheme: a kind of microwave low-pass filter with semi arch groove structure, including dielectric-slab, is situated between
One surface of scutum is provided with metal micro-strip, and another surface is provided with metal ground；Described metal micro-strip includes micro-strip ripple
The section of leading, micro-strip waveguide segment is connected with artificial surface phasmon section through changeover portion；The top edge of described micro-strip waveguide segment is for referring to
Number type curve, exponential type curve is connected with the top edge of changeover portion；Semicircle is distributed in described artificial surface phasmon section
Arc fluting.
In the aforesaid microwave low-pass filter with semi arch groove structure, the width of rebate of described semi arch groove
The value of w1 is 3～8mm, and the value of degree of depth w2 of semi arch groove is 1.5～4mm, and the grooved period p of semi arch groove is 3
～8mm.
In the aforesaid microwave low-pass filter with semi arch groove structure, described exponential type curve meets equation y
=u1+u* (exp (k*x/ (l1+l2))-1)/(exp (k)-1), wherein u1 is exponential curve position parameter, its value be 1～
10mm, u, k are form factor, and the value of u is 0.5～4mm, and the value of k is 2～30mm.
In the aforesaid microwave low-pass filter with semi arch groove structure, the top edge on described metal ground is oval
Curve, elliptic curve meets equationWherein a is the short axle of elliptic curve half
Footpath, its value is 1～12mm；B1 is the vertical coordinate at top edge elliptic curve center, and its value is 0.1～15mm；W is oval bent
Line position coefficient, its value is 5～15mm；l1For the length of micro-strip waveguide segment, its value is 5～15mm, l2Length for changeover portion
Degree, its value is 15～35mm, l3For the length of artificial surface phasmon section, its value is 60～75mm.
In the aforesaid microwave low-pass filter with semi arch groove structure, the lower limb on described metal ground is oval
Curve, elliptic curve meets equationB is lower limb elliptic curve center
Vertical coordinate, its value is 0.1～5mm.
In the aforesaid microwave low-pass filter with semi arch groove structure, described changeover portion is provided with degree of depth gradual change
Semi arch groove.
Compared with prior art, the top edge of micro-strip waveguide segment is set to exponential type curve by the present invention, by this structure, real
Show micro-strip waveguide segment to be connected with the good of changeover portion, effectively prevent electromagnetic resistivity sudden change, and then be substantially reduced to go out because of sudden change
The strongest microwave electric field reflection, it is to avoid deep fades occurs in outfan electromagnetic field, and the transmission that reduce further electromagnetic field is damaged
Consumption.The present invention is also provided with the semi arch groove of degree of depth gradual change on changeover portion, by this structure, realize further Quasi-TEM mode to
The transition of SSPPs pattern, reduces microwave electric field reflection.In addition, the top edge on metal ground is set to meet equation by the present inventionElliptic curve, lower limb meets equation
By this structure, it is possible to realize impedance and the pattern match of electromagnetic field, it is substantially reduced because electromagnetic field mode and impedance mismatch go out
The strongest microwave electric field reflection.Applicant is found by great many of experiments, when in the curve of elliptic equation, a is 1～12mm, b1 are
0.1～15mm, w be 5～15mm, l1It is 5～15mm, l2It is 15～35mm, l3Being 60～75mm, when b is 0.1～5mm, it is micro-
The reflection of ripple electric field is minimum.
The present invention is by arranging a series of semi arch groove in artificial surface phasmon section；By this structure, make
Electromagnetic field is bound in semi arch groove vicinity when transmission, thus when greatly reducing plurality of transmission lines transmission because of spacing too
Little and the electromagnetic interference that occurs so that capacity of resisting disturbance is greatly enhanced, and also enhances the work of high density microwave integrated circuit simultaneously
Time stability, moreover, because anti-electromagnetic interference capability is greatly enhanced, the present invention can also reduce the metal of microwave integrated circuit
Spacing between micro-strip is to realize the miniaturization of device, thus can better adapt to the development of current extensive microwave integrated circuit.
The present invention can also regulate and control cut-off frequency and the magnetic distribution of microwave transmission line by the physical dimension of regulation semi arch groove,
Adjusting the constraint effect of electromagnetic wave, applicant finds after carrying out lot of experiments simultaneously, when w1 be 3～8mm, w2 be 1.5～
When 4mm, p are 3～8mm, electromagnetic field is had and well fetters effect by semi arch groove.
In order to preferably prove beneficial effects of the present invention, application has carried out following experiment: applicant designs one to be had
The microwave low-pass filter sample of semi arch groove structure, the parameter of sample such as table 1.
Table 1 microwave filter sample each several part parameter (unit: mm)
The dielectric-slab of this sample uses dielectric constant to be the substrate of 2.65, has the filtering curve of this sample through time domain
Limiting Difference Calculation as it is shown on figure 3, S11 is filter reflection coefficients in Fig. 3, S21 is filter transfer coefficient, and this sample is low pass
Filtering, its mid frequency is 6.377GHz, and at this, insertion loss is 0.9dB, and its-3dB passband is that direct current is to 12.663GHz, sample
Product are at whole passband reflection coefficient less than-10.0dB, and ripple shake is less than 0.68dB.
Design one without changeover portion l2Contrast wave filter, the dielectric constant of its dielectric-slab is all 2.65, other structures
Parameter is with reference to table 1；Calculating the coverage diagram of this contrast wave filter through Fdtd Method, result of calculation is as shown in Figure 4.
Being learnt by Fig. 4, the loss of this filter transfer is big compared with the sample having changeover portion, and in passband, after 6GHz, reflection coefficient starts greatly
Exceed greatly-10dB.Being contrasted from Fig. 3 and Fig. 4, the changeover portion of the semi arch groove arranging degree of depth gradual change can be effectively improved sample
Transmission and reflection characteristic.
Fig. 5 be sample when 6GHz band operation, the distribution map of the electric field of semi arch groove vicinity normal direction, can by figure
Seeing, its electric field is mainly bound by semi arch groove vicinity, spreads the least.
Accompanying drawing explanation
Fig. 1 is the Facad structure schematic diagram of the present invention；
Fig. 2 is the structure schematic diagram of the present invention；
Fig. 3 is the S parameter curve chart of sample；
Fig. 4 is the S parameter curve chart of the wave filter not using changeover portion；
Fig. 5 is the wave filter sample semi arch groove surrounding normal direction distribution map of the electric field when 6GHz band operation.
Being labeled as in accompanying drawing: 1-dielectric-slab, 2-metal micro-strip, 3-metal ground, 4-micro-strip waveguide segment, 5-changeover portion, 6-
Artificial surface phasmon section, 7-semi arch groove, 8-elliptic curve, 9-exponential type curve.
Detailed description of the invention
The present invention is further illustrated with embodiment below in conjunction with the accompanying drawings, but is not intended as depending on restriction of the present invention
According to.
Embodiment.A kind of microwave low-pass filter with semi arch groove structure, is constituted as illustrated in fig. 1 and 2, including being situated between
Scutum 1, a surface of dielectric-slab 1 is provided with metal micro-strip 2, and another surface is provided with metal ground 3；Described metal micro-strip
2 include micro-strip waveguide segment 4, and micro-strip waveguide segment 4 is connected with artificial surface phasmon section 6 through changeover portion 5；Described micro-strip waveguide
The top edge of section 4 is exponential type curve 9, and exponential type curve 9 is connected with the top edge of changeover portion 5；Described artificial surface etc. from
Semi arch groove 7 is distributed in excimer section 6.
In the aforesaid microwave low-pass filter with semi arch groove structure, the slot opening of described semi arch groove 7
The value of degree w1 is 3～8mm, and the value of degree of depth w2 of semi arch groove 7 is 1.5～4mm, the grooved period p of semi arch groove 7
It is 3～8mm.
Aforesaid exponential type curve 9 meets equation y=u1+u* (exp (k*x/ (l1+l2))-1)/(exp (k)-1), wherein
U1 is exponential curve position parameter, and its value is 1～10mm, and u, k are form factor, and the value of u is 0.5～4mm, and k takes
Value is 2～30mm.
The top edge on aforesaid metal ground 3 is elliptic curve 8, and elliptic curve 8 meets equation
Wherein a is elliptic curve 8 minor axis radius, and its value is 1～12mm；B1 is the vertical coordinate at top edge elliptic curve center, and it takes
Value is 0.1～15mm；W is elliptic curve 8 position parameter, and its value is 5～15mm；l1For the length of micro-strip waveguide segment, it takes
Value is 5～15mm, l2For the length of changeover portion 5, its value is 15～35mm, l3For the length of artificial surface phasmon section 6,
Its value is 60～75mm.
The lower limb on aforesaid metal ground 3 is elliptic curve 8, and elliptic curve 8 meets equation
B is the vertical coordinate at lower limb elliptic curve center, and its value is 0.1～5mm.
Aforesaid changeover portion 5 is provided with the semi arch groove 7 of degree of depth gradual change.
The operation principle of the present invention: the electromagnetic field of Quasi-TEM mode is transferred to changeover portion 5 by the micro-strip waveguide segment 4 on the left side,
Changeover portion 5 gradually fades to the electromagnetic field of SSPPs pattern, and Quasi-TEM mode and the electromagnetism of SSPPs pattern in changeover portion 5
Field coexists, and when electromagnetic field arrives artificial surface phasmon section 6, is fully converted to the electromagnetic field of SSPPs pattern, and manually
Surface phasmon section 6 is transmitted, and after transmission, SSPPs pattern electromagnetic field converts, through the changeover portion on the right, the TEM mould that is as the criterion again
The electromagnetic field of formula is exported by the micro-strip waveguide segment on the right.When electromagnetic field is propagated at micro-strip waveguide segment 4, the pattern of electromagnetic field in this section
For Quasi-TEM mode, this pattern electromagnetic field is bound in the dielectric-slab between micro-strip waveguide segment 4 and metal ground 3；Pass at changeover portion 5
Sowing time, in this section, Quasi-TEM mode coexists with SSPPs pattern, and wherein Quasi-TEM mode electromagnetic field is bound in changeover portion 5 and metal
In dielectric-slab between ground 3, SSPPs pattern electromagnetic field is bound in around semi arch groove 7；At l3When propagating, in this section
For SSPPs pattern, this pattern electromagnetic field is bound in around semi arch groove 7.
Claims (6)
1. a microwave low-pass filter with semi arch groove structure, it is characterised in that: include dielectric-slab (1), dielectric-slab
(1) a surface is provided with metal micro-strip (2), another surface with being provided with metal (3)；Described metal micro-strip (2) bag
Including micro-strip waveguide segment (4), micro-strip waveguide segment (4) is connected with artificial surface phasmon section (6) through changeover portion (5)；Described is micro-
The top edge of band waveguide segment (4) is exponential type curve (9), and exponential type curve (9) is connected with the top edge of changeover portion (5)；Described
Artificial surface phasmon section (6) on semi arch groove (7) is distributed.
The microwave low-pass filter with semi arch groove structure the most according to claim 1, it is characterised in that: described
The value of the width of rebate w1 of semi arch groove (7) is 3～8mm, the value of degree of depth w2 of semi arch groove (7) be 1.5～
4mm, the grooved period p of semi arch groove (7) is 3～8mm.
The microwave low-pass filter with semi arch groove structure the most according to claim 1 and 2, it is characterised in that: institute
The exponential type curve (9) stated meets equation y=u1+u* (exp (k*x/ (l1+l2))-1)/(exp (k)-1), wherein u1 is index
Curve location coefficient, its value is 1～10mm, and u, k are form factor, and the value of u is 0.5～4mm, the value of k be 2～
30mm。
The microwave low-pass filter with semi arch groove structure the most according to claim 1 and 2, it is characterised in that: described
The top edge of metal ground (3) is elliptic curve (8), and elliptic curve (8) meets equation
Wherein a is elliptic curve (8) minor axis radius, and its value is 1～12mm；B1 is the vertical coordinate at top edge elliptic curve center, its
Value is 0.1～15mm；W is elliptic curve (8) position parameter, and its value is 5～15mm；l1For the length of micro-strip waveguide segment,
Its value is 5～15mm, l2For the length of changeover portion (5), its value is 15～35mm, l3For artificial surface phasmon section (6)
Length, its value is 60～75mm.
The microwave low-pass filter with semi arch groove structure the most according to claim 4, it is characterised in that: described metal
The lower limb on ground (3) is elliptic curve (8), and elliptic curve (8) meets equation
B is the vertical coordinate at lower limb elliptic curve center, and its value is 0.1～5mm.
The microwave low-pass filter with semi arch groove structure the most according to claim 1 and 2, it is characterised in that: institute
The changeover portion (5) stated is provided with the semi arch groove (7) of degree of depth gradual change.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610420528.3A CN105958162B (en) | 2016-06-15 | 2016-06-15 | A kind of microwave low-pass filter with semi arch groove structure |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610420528.3A CN105958162B (en) | 2016-06-15 | 2016-06-15 | A kind of microwave low-pass filter with semi arch groove structure |
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| Publication Number | Publication Date |
|---|---|
| CN105958162A true CN105958162A (en) | 2016-09-21 |
| CN105958162B CN105958162B (en) | 2018-11-09 |
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| CN201610420528.3A Expired - Fee Related CN105958162B (en) | 2016-06-15 | 2016-06-15 | A kind of microwave low-pass filter with semi arch groove structure |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106374176A (en) * | 2016-09-27 | 2017-02-01 | 东南大学 | Basic transmission line for transmitting artificial surface plasma polaritons and multi-layer transmission circuit and multi-functional device thereof |
| CN106785264A (en) * | 2017-01-04 | 2017-05-31 | 梧州学院 | A kind of sawtooth grooves microwave band-pass filter |
| CN106785260A (en) * | 2017-01-04 | 2017-05-31 | 梧州学院 | A kind of wide-band microwave bandpass filter |
| CN106785267A (en) * | 2017-01-04 | 2017-05-31 | 梧州学院 | A kind of bandwidth adjustable microwave wave filter with elliptic arc tongue structure |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103022601A (en) * | 2012-12-24 | 2013-04-03 | 中国计量学院 | Arc-groove THz-wave filter |
| CN104810578A (en) * | 2015-05-12 | 2015-07-29 | 中国矿业大学 | U-shaped slot type artificial surface plasmonband elimination filter |
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2016
- 2016-06-15 CN CN201610420528.3A patent/CN105958162B/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103022601A (en) * | 2012-12-24 | 2013-04-03 | 中国计量学院 | Arc-groove THz-wave filter |
| CN104810578A (en) * | 2015-05-12 | 2015-07-29 | 中国矿业大学 | U-shaped slot type artificial surface plasmonband elimination filter |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106374176A (en) * | 2016-09-27 | 2017-02-01 | 东南大学 | Basic transmission line for transmitting artificial surface plasma polaritons and multi-layer transmission circuit and multi-functional device thereof |
| CN106374176B (en) * | 2016-09-27 | 2019-06-04 | 东南大学 | The double-deck transmission circuit and multifunction device of artificial surface plasmon |
| CN106785264A (en) * | 2017-01-04 | 2017-05-31 | 梧州学院 | A kind of sawtooth grooves microwave band-pass filter |
| CN106785260A (en) * | 2017-01-04 | 2017-05-31 | 梧州学院 | A kind of wide-band microwave bandpass filter |
| CN106785267A (en) * | 2017-01-04 | 2017-05-31 | 梧州学院 | A kind of bandwidth adjustable microwave wave filter with elliptic arc tongue structure |
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| CN105958162B (en) | 2018-11-09 |
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