CN105957869A - Bearing substrate and manufacturing method therefor - Google Patents
Bearing substrate and manufacturing method therefor Download PDFInfo
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- CN105957869A CN105957869A CN201610459080.6A CN201610459080A CN105957869A CN 105957869 A CN105957869 A CN 105957869A CN 201610459080 A CN201610459080 A CN 201610459080A CN 105957869 A CN105957869 A CN 105957869A
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- layer
- driven comb
- static driven
- substrate
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- 239000000758 substrate Substances 0.000 title claims abstract description 121
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 28
- 239000006185 dispersion Substances 0.000 claims abstract description 44
- 239000010410 layer Substances 0.000 claims description 90
- 238000000034 method Methods 0.000 claims description 23
- 230000004888 barrier function Effects 0.000 claims description 21
- 239000011241 protective layer Substances 0.000 claims description 21
- 230000005611 electricity Effects 0.000 claims description 9
- 230000001154 acute effect Effects 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 239000004020 conductor Substances 0.000 claims description 6
- 238000009413 insulation Methods 0.000 claims 1
- 230000003068 static effect Effects 0.000 abstract description 9
- 239000010408 film Substances 0.000 description 10
- 239000000463 material Substances 0.000 description 5
- 238000009825 accumulation Methods 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000004952 Polyamide Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- GRPQBOKWXNIQMF-UHFFFAOYSA-N indium(3+) oxygen(2-) tin(4+) Chemical compound [Sn+4].[O-2].[In+3] GRPQBOKWXNIQMF-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
Abstract
The invention provides a bearing substrate used for bearing an array substrate. The bearing substrate comprises a base substrate, wherein the base substrate comprises a middle region corresponding to a display region of the array substrate, and an edge region which surrounds the middle region, wherein the bearing substrate also comprises a static dispersion layer arranged on the base substrate; and the static dispersion layer is used for at least dispersing the static in the middle region to the edge region. Correspondingly, the invention also provides a manufacturing method for the bearing substrate. Static damage to the array substrate in the manufacturing process can be reduced.
Description
Technical field
The present invention relates to the making field of display device, be specifically related to a kind of bearing substrate and
Manufacture method.
Background technology
The organic material film layer that the substrate of flexible array substrate is the most flexible, e.g., polyamides is sub-
Amine (PI) film, in the manufacturing process of flexible array substrate, in order to fix flexible substrate,
As it is shown in figure 1, generally flexible substrate 1 to be produced on bearing substrate 2 (usually glass substrate)
On, in flexible substrate 1, form thin film transistor (TFT) array, holding wire, pixel electrode etc. afterwards
Structure, separates flexible substrate 1 with bearing substrate the most again.In manufacturing process, owing to holding
The friction of the base station of carried base board 2 and the described bearing substrate 2 of support or other reasons, easily produce
Electrostatic, when buildup of static electricity to a certain extent time, electric discharge phenomena will be occurred to make dielectric breakdown,
And electric discharge phenomena typically take place in the place that holding wire intersects, thus it is easily caused holding wire
Short-circuit or short-circuit, thus affect product quality.
Summary of the invention
It is contemplated that at least solve one of technical problem present in prior art, it is proposed that
A kind of bearing substrate and preparation method thereof, to reduce Electro-static Driven Comb pair in array base palte manufacturing process
The damage of product.
In order to solve one of above-mentioned technical problem, the present invention provides a kind of bearing substrate, is used for
Carrying array base palte, described bearing substrate includes that underlay substrate, described underlay substrate include and institute
State mesozone corresponding to the viewing area of array base palte and around the marginal zone of described mesozone, described
Bearing substrate also includes the electrostatic dispersion layer being arranged on described underlay substrate, described electrostatic dispersion
Layer is for the electrostatic dispersion of mesozone described in major general to described marginal zone.
Preferably, described electrostatic dispersion layer is the transparent conductive film layer covering described underlay substrate.
Preferably, described bearing substrate also includes the insulating barrier being arranged on described electrostatic dispersion layer
With the Electro-static Driven Comb layer being arranged on described insulating barrier, described Electro-static Driven Comb layer is for by described
Between the Electro-static Driven Comb in district to described marginal zone.
Preferably, the thickness of described insulating barrier existsBetween.
Preferably, described Electro-static Driven Comb layer includes the first Electro-static Driven Comb portion and is positioned at described edge
The second Electro-static Driven Comb portion in district, described first Electro-static Driven Comb portion includes multiple for release electrostatic
Electric discharge tip, multiple electric discharge tips are arranged around described mesozone, and the court of described electric discharge tip
It is acute angle to the one end in described second Electro-static Driven Comb portion.
Preferably, described first Electro-static Driven Comb portion also includes annular body, described electric discharge tip
Being formed in described annular body, described second Electro-static Driven Comb portion is ring-type.
Preferably, described bearing substrate also includes the protection being arranged on described Electro-static Driven Comb layer
Layer, described protective layer is made up of insulant.
Preferably, the thickness of described protective layer existsBetween.
Correspondingly, the present invention also provides for the manufacture method of a kind of bearing substrate, described carrying base
Plate is used for carrying array base palte, and described manufacture method includes:
Thering is provided underlay substrate, described underlay substrate includes corresponding with the viewing area of described array base palte
Mesozone and around the marginal zone of described mesozone；
Forming electrostatic dispersion layer on described underlay substrate, described electrostatic dispersion layer is at least
By the electrostatic dispersion of described mesozone to described marginal zone.
Preferably, described electrostatic dispersion layer is the transparent conductive film layer covering described underlay substrate.
Preferably, described manufacture method is additionally included in step laggard forming electrostatic dispersion layer
Row:
Form insulating barrier；
Forming Electro-static Driven Comb layer, described Electro-static Driven Comb layer is for releasing the electrostatic of described mesozone
Put to described marginal zone.
Preferably, the thickness of described insulating barrier existsBetween.
Preferably, the step of described formation Electro-static Driven Comb layer includes:
Form conductive material layer；
Described conductive material layer is patterned technique, includes the first Electro-static Driven Comb portion to be formed
With the figure in the second Electro-static Driven Comb portion being positioned at described marginal zone, described first Electro-static Driven Comb portion bag
Including multiple electric discharge tip for release electrostatic, multiple electric discharge tips set around described mesozone
Put, and one end towards described second Electro-static Driven Comb portion of described electric discharge tip is acute angle.
Preferably, described first Electro-static Driven Comb portion also includes annular body, described electric discharge tip
Being formed in described annular body, described second Electro-static Driven Comb portion is ring-type.
Preferably, described manufacture method is additionally included in step laggard forming Electro-static Driven Comb layer
Row:
Forming protective layer, described protective layer is made up of insulant.
Preferably, the thickness of described protective layer existsBetween.
Owing to being provided with electrostatic dispersion layer on the underlay substrate of the bearing substrate of present invention offer,
Electrostatic dispersion on underlay substrate can be opened by this electrostatic dispersion layer, thus reduces array base palte
There is breakdown probability in viewing area；Further, Electro-static Driven Comb layer is additionally provided with Electro-static Driven Comb layer,
Can accumulation of static electricity to a certain extent time, discharge in the marginal zone of bearing substrate, to release
Exoergic is enough, thus reduces the damage of the viewing area of array substrate.
Accompanying drawing explanation
Accompanying drawing is used to provide a further understanding of the present invention, and constitutes the one of description
Part, is used for explaining the present invention together with detailed description below, but is not intended that this
The restriction of invention.In the accompanying drawings:
Fig. 1 is the structural representation of the existing bearing substrate carrying flexible substrate；
Fig. 2 is the structural representation of the bearing substrate provided in embodiments of the invention；
Shape when Fig. 3 is to be partially formed with electrostatic on the underlay substrate in embodiments of the invention
State schematic diagram；
Fig. 4 is that after arranging electrostatic dispersion layer in embodiments of the invention, the dispersity of electrostatic is shown
It is intended to；
Fig. 5 is the top view of Electro-static Driven Comb layer in embodiments of the invention；
Fig. 6 be the bearing substrate of the present invention manufacturing process in form the knot after electrostatic dispersion layer
Structure schematic diagram；
Fig. 7 is the structural representation forming insulating barrier on the electrostatic dispersion layer of Fig. 6；
Fig. 8 is the top view after forming Electro-static Driven Comb layer on the insulating barrier of Fig. 7；
Fig. 9 is the AA sectional view of Fig. 8.
Wherein, reference is:
1, flexible substrate；2, bearing substrate of the prior art；10, underlay substrate；20、
Electrostatic dispersion layer；30, insulating barrier；40, Electro-static Driven Comb layer；41, the first Electro-static Driven Comb portion；
41a, electric discharge tip；41b, annular body；42, the second Electro-static Driven Comb portion；50, protective layer.
Detailed description of the invention
Below in conjunction with accompanying drawing, the detailed description of the invention of the present invention is described in detail.Should manage
Solving, detailed description of the invention described herein is merely to illustrate and explains the present invention, not
For limiting the present invention.
As an aspect of of the present present invention, it is provided that a kind of bearing substrate, it is used for carrying array base palte,
As in figure 2 it is shown, described bearing substrate includes underlay substrate 10 and is arranged on underlay substrate 10
Electrostatic dispersion layer 20, underlay substrate 10 include corresponding with the viewing area of described array base palte in
Between district and the marginal zone around described mesozone, electrostatic dispersion layer 20 is in the middle of described in major general
The electrostatic dispersion in district is to described marginal zone.
Described bearing substrate is particularly suited for carrying in the manufacturing process of flexible array substrate soft
Property array base palte, i.e. make flexible array substrate time, flexible substrate is formed at carrying base
On plate, make the structure such as thin film transistor (TFT) array, holding wire the most on flexible substrates, work as battle array
When row substrate manufacture is complete, flexible substrates is separated with bearing substrate.
In the manufacturing process of array base palte, long-pending in mesozone due to friction when bearing substrate
During tired electrostatic, these electrostatic are easy to the dielectric of the viewing area so that corresponding array base palte
Puncture, thus affect product quality.And in the present invention, electrostatic dispersion layer 20 at least can
Enough by the electrostatic dispersion of mesozone to marginal zone, thus reduce the electromotive force of mesozone and marginal zone
Difference, lowers the probability of mesozone electric discharge, and then reduces owing to electrostatic breakdown array substrate shows
The impact of the thin film transistor (TFT) array in district, improves product quality.
Wherein, underlay substrate 10 and electrostatic dispersion layer 20 all can use transparent material, with
It is easy to flexible substrates be separated with bearing substrate follow-up.Specifically, underlay substrate 10 is
Glass substrate, electrostatic dispersion layer 20 is the transparent conductive film layer covering described underlay substrate, e.g.,
Indium oxide tin film layer.The film layer that electrostatic dispersion layer 20 is set to flood can simplify processing technology,
And when on bearing substrate, the accumulation of a certain position has electrostatic (stain in such as Fig. 3), electrostatic divides
Dissipating layer 20 uses the film layer of flood can more uniformly be scatter by the electrostatic of this position (such as figure
Shown in 4).Certainly, electrostatic dispersion layer 20 can also use other structures, such as, uses net
The structure of shape.
Further, as in figure 2 it is shown, described bearing substrate also includes being arranged on electrostatic dispersion layer
Insulating barrier 30 on 20 and the Electro-static Driven Comb layer 40 being arranged on insulating barrier 30, Electro-static Driven Comb layer
40 for discharging the electrostatic of mesozone to marginal zone.Therefore, quiet when on underlay substrate 10
When electricity is accumulated to a certain extent, electrostatic is discharged by Electro-static Driven Comb layer 40 in described marginal zone, thus
The thin film transistor (TFT) array preventing array base palte viewing area is destroyed.
Wherein, the material of insulating barrier 30 can include the nitride of silicon, the thickness of insulating barrier 30
SpendBetween, to reduce the breakdown strength between insulating barrier 30, so that
During proper generation Electro-static Driven Comb, preferentially puncture at insulating barrier 30, without at array base
Insulating barrier on plate punctures.
Specifically, as it is shown in figure 5, Electro-static Driven Comb layer 40 includes the first Electro-static Driven Comb portion 41
Be positioned at the second Electro-static Driven Comb portion 42 of described marginal zone, the first Electro-static Driven Comb portion 41 includes many
The individual electric discharge tip 41a for release electrostatic, multiple electric discharge tip 41a are around described mesozone
Arrange, and one end towards the second Electro-static Driven Comb portion 42 of electric discharge tip 41a is acute angle.Cause
This, when the buildup of static electricity on underlay substrate 10 to a certain extent time, electric discharge tip 41a can court
Discharge to the second Electro-static Driven Comb portion 42 (that is, point discharge), carry out energy release, reduce
The damage of the viewing area of array substrate.Wherein, the material of Electro-static Driven Comb layer 40 can include
Metal, it is also possible to include transparent conductive film layer.
Wherein, the first Electro-static Driven Comb portion 41 also includes annular body 41b, and discharge tip 41a
Being formed in annular body 41b, the second Electro-static Driven Comb portion 42 is ring-type, thus in accumulation
When electrostatic is more, electrostatic can be discharged to described edge by the first Electro-static Driven Comb portion 41 equably
District.
Further, as in figure 2 it is shown, described bearing substrate also includes being arranged on Electro-static Driven Comb
Protective layer 50 on layer 40, protective layer 50 is made up of insulant, such as, protective layer 50
Material can include the nitride of silicon, wherein, the thickness of protective layer 50 existsBetween, to form even curface.When making flexible array substrate, soft
Property array base palte flexible substrate can be formed on protective layer 50, on flexible array substrate make
When flexible substrate being peeled off from bearing substrate after completing, protective layer 50 plays protection electrostatic
Releasing layer used, and it is easy to follow-up cleaning.
As another aspect of the present invention, it is provided that the manufacture method of a kind of bearing substrate, described
Bearing substrate is used for carrying array base palte, and described manufacture method includes:
S1, offer underlay substrate 10, underlay substrate 10 includes and the display of described array base palte
Mesozone that district is corresponding and the marginal zone around described mesozone.
S2, on underlay substrate 10 formed electrostatic dispersion layer 20, electrostatic dispersion layer 20 is used for
To the electrostatic dispersion of mesozone described in major general to described marginal zone, as shown in Figure 6.Preferably,
Electrostatic dispersion layer 20 is the transparent conductive film layer covering underlay substrate 10 such that it is able to by electrostatic
More uniformly it scatter.
Described manufacture method is carried out after being additionally included in step S2:
S3, formation insulating barrier 30, as shown in Figure 7.Wherein, the material of insulating barrier 30 is permissible
Including the nitride of silicon, its thickness can beBetween.
S4, formation Electro-static Driven Comb layer 40, as shown in Figure 8, Electro-static Driven Comb layer 40 is in inciting somebody to action
Between the release in district to described marginal zone.When buildup of static electricity to a certain extent time, Electro-static Driven Comb layer
40 can discharge to marginal zone, to release energy, reduce electrostatic array substrate viewing area
Impact.
Specifically, step S4 includes:
S41, formation conductive material layer.
S42, described conductive material layer is patterned technique, includes that the first electrostatic is released to be formed
The figure in the second Electro-static Driven Comb portion 42 putting portion 41 and be positioned at described marginal zone, as it is shown in figure 9,
First Electro-static Driven Comb portion 41 includes multiple electric discharge tip 41a, Duo Gefang for release electrostatic
Electricity tip 41a is arranged around described mesozone, and electric discharge the releasing towards the second electrostatic of tip 41a
The one end putting portion 42 is acute angle.Wherein, the first Electro-static Driven Comb portion 41 also includes annular body
41b, electric discharge tip 41a are formed in annular body 41b, and the second Electro-static Driven Comb portion 42 is ring
Shape.
Further, carry out after described manufacture method is additionally included in step S4:
S5, formation protective layer 50, obtain the bearing substrate shown in Fig. 2.Protective layer 50 is by absolutely
Edge material is made, and the thickness of protective layer 50 can beBetween, thus can
So that the surface of bearing substrate is the most smooth, and by flexible liner after having made array base palte
When the end peels off from bearing substrate, protective layer 50 can play the work of protection Electro-static Driven Comb layer 40
With.
It can be seen that it is quiet owing to being provided with on the underlay substrate of the bearing substrate of present invention offer
Electrodispersion layer, the electrostatic dispersion on underlay substrate can be opened, thus reduced by this electrostatic dispersion layer
Electric potential difference between zones of different on underlay substrate, reduces the probability of Electro-static Driven Comb；Further, quiet
Electricity releasing layer on be additionally provided with Electro-static Driven Comb layer, it is possible to accumulation of static electricity to a certain extent time,
Discharge in the marginal zone of bearing substrate, with release can, thus reduce the aobvious of array substrate
Show the damage in district.
It is understood that the principle that is intended to be merely illustrative of the present of embodiment of above and
The illustrative embodiments used, but the invention is not limited in this.For in this area
For those of ordinary skill, without departing from the spirit and substance in the present invention, can do
Going out various modification and improvement, these modification and improvement are also considered as protection scope of the present invention.
Claims (16)
1. a bearing substrate, is used for carrying array base palte, and described bearing substrate includes substrate
Substrate, described underlay substrate includes the mesozone corresponding with the viewing area of described array base palte and ring
Marginal zone around described mesozone, it is characterised in that described bearing substrate also includes being arranged on institute
Stating the electrostatic dispersion layer on underlay substrate, described electrostatic dispersion layer is for mesozone described in major general
Electrostatic dispersion to described marginal zone.
Bearing substrate the most according to claim 1, it is characterised in that described electrostatic divides
Scattered layer is the transparent conductive film layer covering described underlay substrate.
Bearing substrate the most according to claim 1, it is characterised in that described carrying base
Plate also includes the insulating barrier being arranged on described electrostatic dispersion layer and is arranged on described insulating barrier
Electro-static Driven Comb layer, described Electro-static Driven Comb layer is for by the Electro-static Driven Comb of described mesozone to described limit
Edge district.
Bearing substrate the most according to claim 3, it is characterised in that described insulating barrier
Thickness existBetween.
Bearing substrate the most according to claim 3, it is characterised in that described electrostatic is released
Put layer include the first Electro-static Driven Comb portion and be positioned at the second Electro-static Driven Comb portion of described marginal zone, described
First Electro-static Driven Comb portion includes multiple electric discharge tip for release electrostatic, multiple electric discharge tips ring
Arrange around described mesozone, and described electric discharge tip towards the one of described second Electro-static Driven Comb portion
End is acute angle.
Bearing substrate the most according to claim 5, it is characterised in that described first quiet
Electricity release portion also includes that annular body, described electric discharge tip are formed in described annular body, institute
The second Electro-static Driven Comb portion that states is ring-type.
Bearing substrate the most according to claim 3, it is characterised in that described carrying base
Plate also includes the protective layer being arranged on described Electro-static Driven Comb layer, and described protective layer is by insulant
Make.
Bearing substrate the most according to claim 7, it is characterised in that described protective layer
Thickness existBetween.
9. a manufacture method for bearing substrate, described bearing substrate is used for carrying array base palte,
It is characterized in that, described manufacture method includes:
Thering is provided underlay substrate, described underlay substrate includes corresponding with the viewing area of described array base palte
Mesozone and around the marginal zone of described mesozone；
Forming electrostatic dispersion layer on described underlay substrate, described electrostatic dispersion layer is at least
By the electrostatic dispersion of described mesozone to described marginal zone.
Manufacture method the most according to claim 9, it is characterised in that described electrostatic
Dispersion layer is the transparent conductive film layer covering described underlay substrate.
11. manufacture methods according to claim 9, it is characterised in that described making
Method is carried out after being additionally included in the step forming electrostatic dispersion layer:
Form insulating barrier；
Forming Electro-static Driven Comb layer, described Electro-static Driven Comb layer is for releasing the electrostatic of described mesozone
Put to described marginal zone.
12. manufacture methods according to claim 11, it is characterised in that described insulation
The thickness of layer existsBetween.
13. manufacture methods according to claim 11, it is characterised in that described formation
The step of Electro-static Driven Comb layer includes:
Form conductive material layer；
Described conductive material layer is patterned technique, includes the first Electro-static Driven Comb portion to be formed
With the figure in the second Electro-static Driven Comb portion being positioned at described marginal zone, described first Electro-static Driven Comb portion bag
Including multiple electric discharge tip for release electrostatic, multiple electric discharge tips set around described mesozone
Put, and one end towards described second Electro-static Driven Comb portion of described electric discharge tip is acute angle.
14. manufacture methods according to claim 13, it is characterised in that described first
Electro-static Driven Comb portion also includes that annular body, described electric discharge tip are formed in described annular body,
Described second Electro-static Driven Comb portion is ring-type.
15. manufacture methods according to claim 11, it is characterised in that described making
Method is carried out after being additionally included in the step forming Electro-static Driven Comb layer:
Forming protective layer, described protective layer is made up of insulant.
16. manufacture methods according to claim 15, it is characterised in that described protection
The thickness of layer existsBetween.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610459080.6A CN105957869B (en) | 2016-06-22 | 2016-06-22 | Bearing substrate and preparation method thereof |
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| CN201610459080.6A CN105957869B (en) | 2016-06-22 | 2016-06-22 | Bearing substrate and preparation method thereof |
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| CN103513459A (en) * | 2013-10-14 | 2014-01-15 | 北京京东方光电科技有限公司 | Array substrate and preparing method thereof, display device and preparing method thereof |
| CN103682148A (en) * | 2012-08-31 | 2014-03-26 | 三星显示有限公司 | Organic light emitting device and manufacturing method thereof |
| US20150024220A1 (en) * | 2013-07-18 | 2015-01-22 | Samsung Display Co., Ltd. | Flexible substrate, method of manufacturing flexible substrate, flexible display device, and method of flexible display device |
| CN104656293A (en) * | 2015-03-18 | 2015-05-27 | 合肥京东方光电科技有限公司 | Liquid crystal display panel, manufacturing method of liquid crystal display panel, as well as display device |
| CN105070712A (en) * | 2015-07-10 | 2015-11-18 | 合肥鑫晟光电科技有限公司 | Display substrate, manufacturing method thereof, display panel and display device |
-
2016
- 2016-06-22 CN CN201610459080.6A patent/CN105957869B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103682148A (en) * | 2012-08-31 | 2014-03-26 | 三星显示有限公司 | Organic light emitting device and manufacturing method thereof |
| US20150024220A1 (en) * | 2013-07-18 | 2015-01-22 | Samsung Display Co., Ltd. | Flexible substrate, method of manufacturing flexible substrate, flexible display device, and method of flexible display device |
| CN103513459A (en) * | 2013-10-14 | 2014-01-15 | 北京京东方光电科技有限公司 | Array substrate and preparing method thereof, display device and preparing method thereof |
| CN104656293A (en) * | 2015-03-18 | 2015-05-27 | 合肥京东方光电科技有限公司 | Liquid crystal display panel, manufacturing method of liquid crystal display panel, as well as display device |
| CN105070712A (en) * | 2015-07-10 | 2015-11-18 | 合肥鑫晟光电科技有限公司 | Display substrate, manufacturing method thereof, display panel and display device |
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| Publication number | Publication date |
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| CN105957869B (en) | 2018-09-04 |
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