CN105954322B - 一种基于有机薄膜晶体管的生物/化学传感器 - Google Patents
一种基于有机薄膜晶体管的生物/化学传感器 Download PDFInfo
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- CN105954322B CN105954322B CN201610341745.3A CN201610341745A CN105954322B CN 105954322 B CN105954322 B CN 105954322B CN 201610341745 A CN201610341745 A CN 201610341745A CN 105954322 B CN105954322 B CN 105954322B
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- film transistors
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- 239000000126 substance Substances 0.000 title claims abstract description 26
- 239000010409 thin film Substances 0.000 title claims abstract description 24
- 238000009413 insulation Methods 0.000 claims abstract description 25
- 239000004065 semiconductor Substances 0.000 claims abstract description 22
- 230000035945 sensitivity Effects 0.000 claims abstract description 11
- 239000012528 membrane Substances 0.000 claims abstract description 10
- 230000007547 defect Effects 0.000 claims abstract description 9
- 239000000203 mixture Substances 0.000 claims abstract description 5
- 239000000758 substrate Substances 0.000 claims abstract description 4
- 230000004044 response Effects 0.000 claims description 3
- 230000008859 change Effects 0.000 claims description 2
- 230000005611 electricity Effects 0.000 claims description 2
- 230000004048 modification Effects 0.000 claims description 2
- 238000012986 modification Methods 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 238000001514 detection method Methods 0.000 abstract description 2
- 230000036541 health Effects 0.000 abstract description 2
- 238000012544 monitoring process Methods 0.000 abstract description 2
- 238000002360 preparation method Methods 0.000 abstract description 2
- 239000000463 material Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005518 electrochemistry Effects 0.000 description 1
- 239000008151 electrolyte solution Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/403—Cells and electrode assemblies
- G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/403—Cells and electrode assemblies
- G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
- G01N27/4145—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS specially adapted for biomolecules, e.g. gate electrode with immobilised receptors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/80—Constructional details
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- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Engineering & Computer Science (AREA)
- Immunology (AREA)
- Molecular Biology (AREA)
- Biochemistry (AREA)
- Analytical Chemistry (AREA)
- Pathology (AREA)
- Electrochemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Health & Medical Sciences (AREA)
- Power Engineering (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims (6)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610341745.3A CN105954322B (zh) | 2016-05-20 | 2016-05-20 | 一种基于有机薄膜晶体管的生物/化学传感器 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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CN201610341745.3A CN105954322B (zh) | 2016-05-20 | 2016-05-20 | 一种基于有机薄膜晶体管的生物/化学传感器 |
Publications (2)
Publication Number | Publication Date |
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CN105954322A CN105954322A (zh) | 2016-09-21 |
CN105954322B true CN105954322B (zh) | 2018-06-19 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN201610341745.3A Active CN105954322B (zh) | 2016-05-20 | 2016-05-20 | 一种基于有机薄膜晶体管的生物/化学传感器 |
Country Status (1)
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CN (1) | CN105954322B (zh) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108847424B (zh) * | 2018-04-24 | 2021-09-03 | 京东方科技集团股份有限公司 | 薄膜晶体管、传感器、生物检测装置和方法 |
CN110579525B (zh) * | 2018-06-08 | 2023-08-18 | 天马日本株式会社 | 传感器装置 |
CN109580736A (zh) * | 2018-11-09 | 2019-04-05 | 中山大学 | 基于双栅结构氧化物薄膜晶体管的传感器件及其制备方法 |
CN109752423B (zh) * | 2019-01-21 | 2022-03-11 | 上海交通大学 | 一种基于有机薄膜晶体管阵列的尿酸传感器及控制方法 |
CN109946349B (zh) * | 2019-04-02 | 2021-10-29 | 武汉轻工大学 | 有机场效应晶体管及其制备方法以及生物胺气敏传感器 |
CN110006966A (zh) * | 2019-04-26 | 2019-07-12 | 上海交通大学 | 一种检测多巴胺的非侵入式柔性传感器 |
CN110137203B (zh) * | 2019-05-06 | 2021-03-30 | 上海交通大学 | 像素传感结构、传感装置及像素传感结构的形成方法 |
GB2584898B (en) * | 2019-06-20 | 2024-05-08 | Flexenable Tech Limited | Semiconductor devices |
CN115096965B (zh) * | 2022-05-31 | 2023-09-08 | 上海交通大学 | 薄膜晶体管型生化传感微阵列芯片及其制备方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2014154699A1 (en) * | 2013-03-26 | 2014-10-02 | Novaled Gmbh | Method of manufacturing an organic electronic device and organic electronic device |
CN104641482A (zh) * | 2012-09-04 | 2015-05-20 | 默克专利股份有限公司 | 有机电子器件中介电结构的表面改性方法 |
CN105552226A (zh) * | 2016-01-20 | 2016-05-04 | 上海交通大学 | 一种基于有机薄膜晶体管的温度传感器 |
-
2016
- 2016-05-20 CN CN201610341745.3A patent/CN105954322B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104641482A (zh) * | 2012-09-04 | 2015-05-20 | 默克专利股份有限公司 | 有机电子器件中介电结构的表面改性方法 |
WO2014154699A1 (en) * | 2013-03-26 | 2014-10-02 | Novaled Gmbh | Method of manufacturing an organic electronic device and organic electronic device |
CN105552226A (zh) * | 2016-01-20 | 2016-05-04 | 上海交通大学 | 一种基于有机薄膜晶体管的温度传感器 |
Non-Patent Citations (1)
Title |
---|
Dual Threshold Voltage Organic Thin-Film Transistor Technology;Ivan Nausieda等;《IEEE TRANSACTIONS ON ELECTRON DEVICES》;20101130;第57卷(第11期);3027-3032 * |
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CN105954322A (zh) | 2016-09-21 |
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Effective date of registration: 20220726 Address after: 200240 No. 800, Dongchuan Road, Shanghai, Minhang District Patentee after: Guo Xiaojun Address before: 200240 No. 800, Dongchuan Road, Shanghai, Minhang District Patentee before: SHANGHAI JIAO TONG University |
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Effective date of registration: 20220901 Address after: Room 4008, Building 4, European and American Financial City, Cangqian Street, Yuhang District, Hangzhou City, Zhejiang Province, 311100 Patentee after: Hangzhou Lingzhi Technology Co.,Ltd. Address before: 200240 No. 800, Dongchuan Road, Shanghai, Minhang District Patentee before: Guo Xiaojun |
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