CN105953928A - Pyroelectric infrared detector - Google Patents
Pyroelectric infrared detector Download PDFInfo
- Publication number
- CN105953928A CN105953928A CN201610496476.8A CN201610496476A CN105953928A CN 105953928 A CN105953928 A CN 105953928A CN 201610496476 A CN201610496476 A CN 201610496476A CN 105953928 A CN105953928 A CN 105953928A
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- China
- Prior art keywords
- pyroelectric
- layer
- infrared detector
- crystal layer
- bottom electrode
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- 239000013078 crystal Substances 0.000 claims abstract description 39
- 238000001704 evaporation Methods 0.000 claims abstract description 7
- 239000000463 material Substances 0.000 claims description 15
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 claims description 7
- 230000005616 pyroelectricity Effects 0.000 claims description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- 230000008020 evaporation Effects 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 claims description 3
- 229910052744 lithium Inorganic materials 0.000 claims description 3
- 229910001120 nichrome Inorganic materials 0.000 claims description 3
- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 claims description 3
- 239000000523 sample Substances 0.000 claims description 3
- 230000005855 radiation Effects 0.000 abstract description 11
- 238000001514 detection method Methods 0.000 abstract description 5
- 239000007769 metal material Substances 0.000 abstract description 4
- 230000035945 sensitivity Effects 0.000 abstract description 4
- 229910052751 metal Inorganic materials 0.000 abstract description 3
- 239000002184 metal Substances 0.000 abstract description 3
- 238000000034 method Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 238000002835 absorbance Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- CWYNVVGOOAEACU-UHFFFAOYSA-N Fe2+ Chemical compound [Fe+2] CWYNVVGOOAEACU-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 240000008042 Zea mays Species 0.000 description 1
- 235000005824 Zea mays ssp. parviglumis Nutrition 0.000 description 1
- 235000002017 Zea mays subsp mays Nutrition 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 235000005822 corn Nutrition 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000002329 infrared spectrum Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 235000013372 meat Nutrition 0.000 description 1
- 239000013528 metallic particle Substances 0.000 description 1
- 230000004297 night vision Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000005057 refrigeration Methods 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Radiation Pyrometers (AREA)
Abstract
The invention discloses a pyroelectric infrared detector, which belongs to the electronic technical field of pyroelectric detectors. The pyroelectric infrared detector comprises a detection unit, wherein the detection unit comprises a black metal layer (1), a pyroelectric crystal layer (2) and a bottom electrode layer (3), wherein the pyroelectric crystal layer (2) comprises a top surface and a bottom surface opposite to the top surface; the black metal layer (1) is of a porous structure, and is deposited on the top surface of the pyroelectric crystal layer (2) by adopting a resistance evaporation method; and the bottom electrode layer (3) is deposited on the bottom surface of the pyroelectric crystal layer (2). The pyroelectric infrared detector adopts black metal materials, can absorb more infrared radiation and terahertz radiation since the black metal materials have high radiation absorptivity and small thermal capacity in visible light band and infrared band ranges, has small heat loss, allows pyroelectric crystals to utilize radiation energy to a great extent, and can achieve the purpose of improving performances such as device response speed and sensitivity.
Description
Technical field
The present invention relates to pyroelectric detector electronic technology field, be specifically related to a kind of pyroelectric infrared detector.
Background technology
Infrared Detectors causes for infra-red radiation and to obtain temperature-responsive by measuring sensing unit and detect.Wherein, heat is released
Electric explorer is that a kind of thermosensitive type that the effect that a kind of spontaneous polarization strength utilizing pyroelectricity material changes with temperature is made is infrared
Detector.The effect of pyroelectric infrared detector mainly detection receives infra-red radiation and is converted into faint voltage signal.
And the performance of pyroelectric infrared detector is mainly characterized by response speed and sensitivity, the sensitivity obtained in the range of broadband
Property, it is desirable to the absorbed layer of detector is high to infrared ray absorbing rate, and fast response time just requires that the thermal capacitance of absorbed layer is little.1958
R.A.Smith etc. study discovery, and gold is black can reach best trade-off between high-absorbility and low heat capacity.
Research finds: the metal material using method of evaporating to prepare in nitrogen atmosphere has porous character, and meat under visible light
Eye is observed and is presented black, has the high-selenium corn effect from visible ray to infrared light spectral coverage.Therefore, ferrous metal material it is referred to as.
Dark fund coating be low-density amorphous gold formation of deposits, its electromagnetic spectrum visible light wave range and infrared band present black,
In the range of this, dark fund has the highest absorbance for radiation.Therefore, ferrous material especially dark fund, as infrared and
The absorbed layer of other band detectors is studied widely.And, because dark fund has many empty shape structures, therefore have less
Thermal capacitance.
Dark fund material has loose structure, low heat capacity and high IR assimilation effect and makes it be integrated in non-refrigeration infrared detector tool
There are good business and Military Application.Such as, the Infrared Detectors of integrated dark fund absorbed layer is at night vision, medical treatment, warning and space
In can carry out infrared spectrum detection, have that volume is little, wide range detecting band, lightweight, fast response time and a non-cause simultaneously
The clear advantage such as cold.
Summary of the invention
The present invention provides a kind of pyroelectric detector, and its infrared detecting unit has the advantage that absorbance is high, thus improves heat and release
The performance of electric explorer.
The present invention technical scheme as follows:
A kind of pyroelectric infrared detector, it is characterised in that its pyroelectricity probe unit includes from top to bottom: dark fund layer,
Pyroelectric crystal layer, bottom electrode layer；Described pyroelectric crystal layer includes end face and the bottom surface relative with end face, and described dark fund layer has
Having a loose structure, and be deposited on the end face of pyroelectric crystal layer by reactive evaporation, it is brilliant that described bottom electrode layer is deposited on pyroelectricity
The bottom surface of body layer.
Wherein, described pyroelectric crystal layer material can be conventional pyroelectric crystal, as lithium tantalate, lithium columbate crystal,
Lead titanates crystal, lead germanium oxide crystal, preferably lithium tantalate；The material of described bottom electrode layer is titanium or nichrome.
Wherein, the thickness of described dark fund layer is 8～10nm；The thickness of described bottom electrode layer is 28～32nm.
In the pyroelectric infrared detector of the present invention, described dark fund layer is deposited on described in nitrogen environment by thermal resistance evaporation method
The end face of pyroelectric crystal layer；Described bottom electrode layer can be deposited on the bottom surface of pyroelectric crystal layer by any suitable method,
The present invention uses radio-frequency magnetron sputter method.
In the present invention, dark fund layer causes temperature to raise after absorbing infra-red radiation, and in sensing unit, pyroelectric crystal layer experiences temperature change
Change, discharge the signal of telecommunication, be located at pyroelectric crystal layer end face and the dark fund layer of bottom surface and bottom electrode layer draws the signal of telecommunication, wherein, black
Layer gold serves not only as metal level exporting telecommunication number, and simultaneously as absorbed layer, dark fund material is high to the absorption efficiency of infra-red radiation, with
Time, owing to dark fund layer has the structure of porous, there is bigger porosity, therefore pyroconductivity is relatively low, can reduce heat loss；
Fine and close dark fund metallic particles can effectively reduce lithium tantalate surface roughness.
Compared to prior art, the device have the advantages that as follows:
The pyroelectric detector of the present invention uses dark fund material, because of its visible light wave range and in the range of infrared band for radiation
There is the highest absorbance and there is less thermal capacitance, thus realizing the raising of the performances such as response device speed and sensitivity；This
The bright film plating process that have employed rf magnetron sputtering, preparation technology is simple, workable, can realize production in enormous quantities.
Accompanying drawing explanation
Fig. 1 is the structural representation of pyroelectric infrared detector of the present invention；Wherein, 1 is dark fund layer, and 2 is pyroelectric crystal layer,
3 is bottom electrode layer.
Detailed description of the invention
Describe principle and the feature of the present invention in detail below in conjunction with accompanying drawing, example is served only for explaining the present invention, is not intended to
Limit the present invention.
As it is shown in figure 1, one releases electricity Infrared Detectors, its pyroelectricity probe unit includes from top to bottom: dark fund layer 1,
Pyroelectric crystal layer 2, bottom electrode layer 3；Described pyroelectric crystal layer 2 includes end face and the bottom surface relative with end face, described dark fund
Layer 1 has a loose structure, and is deposited on the end face of pyroelectric crystal layer 2 by reactive evaporation, and described bottom electrode layer 3 deposits
Bottom surface at pyroelectric crystal layer.
Wherein, described pyroelectric crystal layer 2 material can be conventional pyroelectric crystal, as lithium tantalate, lithium columbate crystal,
Lead titanates crystal, lead germanium oxide crystal, preferably lithium tantalate；The material of described bottom electrode layer 3 is titanium or nichrome.
Wherein, the thickness of described dark fund layer is 8～10nm；The thickness of described bottom electrode layer is 28～32nm.
In one embodiment of the invention, the material of described pyroelectric crystal layer 2 is lithium tantalate.
In one embodiment of the invention, the material of described bottom electrode layer 2 is titanium, and its thickness is 30 nanometers.
In one embodiment of the invention, described dark fund layer 1 material is gold, and its thickness is 9 nanometers.
In embodiments of the invention, dark fund layer 1 is deposited on pyroelectric crystal layer by reactive evaporation in higher nitrogen atmosphere
2 surfaces, and hearth electrode 3 can control thickness by magnetron sputtering technique and be deposited on the bottom surface of pyroelectric crystal layer 2.
The pyroelectric detector of the embodiment of the present invention can be more absorption infra-red radiation and terahertz emission, there is less heat waste
Lose, thus emittance can be utilized by pyroelectric crystal largely, therefore improve the electric property of device so that detection
Utensil has the performance of excellence.
Describe the present invention above by specific embodiment, but the present invention is not limited to these specific embodiments.This
Skilled person should be understood that, it is also possible to the present invention makes various amendment, equivalent, change etc., if these conversion
Without departing from the spirit of the present invention, all should be within protection scope of the present invention.
Claims (5)
1. a pyroelectric infrared detector, it is characterised in that its pyroelectricity probe unit includes from top to bottom: dark fund layer
(1), pyroelectric crystal layer (2), bottom electrode layer (3)；Described pyroelectric crystal layer (2) includes end face and relative with end face
Bottom surface, described dark fund layer (1) has a loose structure, and is deposited on the end face of pyroelectric crystal layer (2) by reactive evaporation,
Described bottom electrode layer (3) is deposited on the bottom surface of pyroelectric crystal layer (3).
A kind of pyroelectric infrared detector the most according to claim 1, it is characterised in that described pyroelectric crystal layer (2)
Material be lithium tantalate, lithium columbate crystal, lead titanates crystal, lead germanium oxide crystal.
A kind of pyroelectric infrared detector the most according to claim 1, it is characterised in that the material of described bottom electrode layer (3)
Material is titanium or nichrome.
A kind of pyroelectric infrared detector the most according to claim 1, it is characterised in that the thickness of described dark fund layer (1)
It is 8～10nm.
A kind of pyroelectric infrared detector the most according to claim 1, it is characterised in that the thickness of described bottom electrode layer (3)
Degree is 28～32nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610496476.8A CN105953928A (en) | 2016-06-29 | 2016-06-29 | Pyroelectric infrared detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610496476.8A CN105953928A (en) | 2016-06-29 | 2016-06-29 | Pyroelectric infrared detector |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105953928A true CN105953928A (en) | 2016-09-21 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610496476.8A Pending CN105953928A (en) | 2016-06-29 | 2016-06-29 | Pyroelectric infrared detector |
Country Status (1)
| Country | Link |
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| CN (1) | CN105953928A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106356445A (en) * | 2016-10-28 | 2017-01-25 | 电子科技大学 | Pyroelectric detector adsorbing layer and preparation method of pyramid array structure on surface of pyroelectric detector adsorbing layer |
| CN108831988A (en) * | 2018-06-12 | 2018-11-16 | 中国科学院上海技术物理研究所 | A kind of adjustable non-refrigeration type terahertz detector of working frequency |
| CN109900368A (en) * | 2018-12-29 | 2019-06-18 | 哈尔滨理工大学 | A kind of pyroelectric detector and preparation method thereof of phosphorus alkene infrared absorption layer modification |
| CN112786772A (en) * | 2021-01-08 | 2021-05-11 | 有研工程技术研究院有限公司 | Infrared-enhanced absorption metal nano material and preparation method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04357888A (en) * | 1991-06-04 | 1992-12-10 | Ube Ind Ltd | Pyroelectric infrared ray detecting element |
| CN1693858A (en) * | 2005-05-20 | 2005-11-09 | 中国科学院上海技术物理研究所 | Absorbed layer of room-temp. ferroelectric film infrared focal plane probe and preparation method |
| CN102359821A (en) * | 2011-08-23 | 2012-02-22 | 郑州炜盛电子科技有限公司 | Pyroelectric infrared-sensitive element and pyroelectric infrared detector |
| CN103076098A (en) * | 2013-01-11 | 2013-05-01 | 四川汇源科技发展股份有限公司 | Dielectric breakdown regulating and controlling method for BST (Barium Strontium Titanate) pyroelectric infrared detector |
-
2016
- 2016-06-29 CN CN201610496476.8A patent/CN105953928A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04357888A (en) * | 1991-06-04 | 1992-12-10 | Ube Ind Ltd | Pyroelectric infrared ray detecting element |
| CN1693858A (en) * | 2005-05-20 | 2005-11-09 | 中国科学院上海技术物理研究所 | Absorbed layer of room-temp. ferroelectric film infrared focal plane probe and preparation method |
| CN102359821A (en) * | 2011-08-23 | 2012-02-22 | 郑州炜盛电子科技有限公司 | Pyroelectric infrared-sensitive element and pyroelectric infrared detector |
| CN103076098A (en) * | 2013-01-11 | 2013-05-01 | 四川汇源科技发展股份有限公司 | Dielectric breakdown regulating and controlling method for BST (Barium Strontium Titanate) pyroelectric infrared detector |
Non-Patent Citations (2)
| Title |
|---|
| 刘卫国和金娜: "《集成非制冷热成像探测阵列》", 30 June 2004, 国防工业出版社 * |
| 普朝光等: "《非制冷红外探测材料技术》", 30 September 2011, 国防工业出版社 * |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106356445A (en) * | 2016-10-28 | 2017-01-25 | 电子科技大学 | Pyroelectric detector adsorbing layer and preparation method of pyramid array structure on surface of pyroelectric detector adsorbing layer |
| CN106356445B (en) * | 2016-10-28 | 2019-08-09 | 电子科技大学 | A kind of pyroelectric detector absorbs the preparation method of layer surface pyramid array structure |
| CN108831988A (en) * | 2018-06-12 | 2018-11-16 | 中国科学院上海技术物理研究所 | A kind of adjustable non-refrigeration type terahertz detector of working frequency |
| CN109900368A (en) * | 2018-12-29 | 2019-06-18 | 哈尔滨理工大学 | A kind of pyroelectric detector and preparation method thereof of phosphorus alkene infrared absorption layer modification |
| CN112786772A (en) * | 2021-01-08 | 2021-05-11 | 有研工程技术研究院有限公司 | Infrared-enhanced absorption metal nano material and preparation method thereof |
| CN112786772B (en) * | 2021-01-08 | 2023-12-19 | 有研工程技术研究院有限公司 | Infrared enhanced absorption metal nano material and preparation method thereof |
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Application publication date: 20160921 |