CN105945424B - A kind of semiconductor laser light resource for narrow gap welding - Google Patents
A kind of semiconductor laser light resource for narrow gap welding Download PDFInfo
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- CN105945424B CN105945424B CN201610524670.2A CN201610524670A CN105945424B CN 105945424 B CN105945424 B CN 105945424B CN 201610524670 A CN201610524670 A CN 201610524670A CN 105945424 B CN105945424 B CN 105945424B
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- China
- Prior art keywords
- semiconductor laser
- laser
- narrow gap
- light
- gap welding
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/073—Shaping the laser spot
- B23K26/0738—Shaping the laser spot into a linear shape
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/20—Bonding
- B23K26/21—Bonding by welding
- B23K26/24—Seam welding
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- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Laser Beam Processing (AREA)
Abstract
The present invention proposes a kind of method of narrow gap welding and the semiconductor laser light resource for narrow gap welding, and the semiconductor laser light resource includes semiconductor laser and collimation microscope group；After the collimated microscope group shaping of laser beam, fast axis divergence angle<5 degree, slow axis divergence is between 5 ~ 60 degree so that laser beam approximation blade-like, the limit of beam quality is close on quick shaft direction, is highly suitable to be applied for narrow gap welding.Compared with existing narrow gap laser photocoagulation scheme, the solution of the present invention has lower cost, there is higher promotional value in actual applications.
Description
Technical field
The invention belongs to technical field of laser processing, is related to a kind of semiconductor laser light resource, especially a kind of to be used for narrow
The semiconductor laser light resource of gap welding.
Background technology
With the rapid development of industrial technology, thick plates in fields such as heavy-duty machinery, ship, the energy, railways, get over by application
Come more extensive.The thickness range of thick plates is very big, has many applications from 20mm to 250mm, at present to thick plates
The requirement more and more higher of welding quality and welding efficiency.Narrow gap welding is so that its groove is narrow, wlding consumption is few, welding efficiency
Height, the advantage that deformation is low with residual stress, joint has higher intensity and impact property, have become in modern industrial production
The one preferred technique of thick plate structure welding, its technology and economic advantages determine that it is the main side of thick plates technology development from now on
One of to.
Narrow gap laser photocoagulation with the advantage such as its heat input is small, welding deformation is small, narrow gap welding field progressively by
Pay attention to.But the molten wide of laser welding is limited, when gap widths were larger, it may appear that side wall does not merge defect, the laser of limitation
The throat thickness of welding.
In view of the above-mentioned problems, Chinese patent CN102059452B proposes three beam laser narrow gap welding methods, the U.S.
Patent US5155323 proposes dual-beam laser welding method, can reduce the weld defect of side wall.But these methods are adopted
It is that circular and ellipse laser beam is completed to be applied to narrow gap welding after focusing on interface, light beam is in three-dimensional cone shape.
On the one hand, because the depth-to-width ratio of narrow gap welding is very big, if the very deep very narrow weld seam of welding, the Rayleigh range of corresponding laser will
It is very big, the outlet diameter of such laser beam will very little, export the power density increase of eyeglass, and export apart from weld seam
Distance also corresponding increase, corresponding laser beam quality require high, and the cost of final equipment is higher；On the other hand it is general at present
All over use solid state laser, CO2Laser and optical fiber laser need to be carried as LASER Light Source, the welding efficiency of these light sources
Height, and cost is higher.
The content of the invention
In order to solve the above problems, the present invention proposes a kind of method of narrow gap welding, and for narrow gap welding
Semiconductor laser light resource, a kind of laser beam of approximate blade-like can be provided, on quick shaft direction be close to beam quality
The limit, be highly suitable to be applied for narrow gap welding.
A kind of method of narrow gap welding is：Narrow gap is carried out using the semiconductor laser light resource after collimation as welding light source
Welding, wherein, the fast axis divergence angle of laser<5 degree, and slow axis divergence is between 5 ~ 60 degree so that laser beam is complete in the form of sheets
It is whole into narrow gap region to be welded.
A kind of semiconductor laser light resource for narrow gap welding, including semiconductor laser, collimate microscope group；It is described partly to lead
Body laser is used to launch laser beam；The collimation microscope group, the light direction of semiconductor laser is arranged at, for compressing
Penetrate the angle of divergence of laser so that the fast axis divergence angle of above-mentioned laser<5 degree, and slow axis divergence is between 5 ~ 60 degree so that laser
Light beam in the form of sheets and completely enters in narrow gap region to be welded.
The semiconductor laser is single bar of semiconductor laser, or multiple single bar of semiconductor laser is along its fast axle side
Formed to stacking, for sending a plurality of laser beam being parallel to each other.
Such scheme can further optimize：The semiconductor laser light resource for narrow gap welding also includes light combination mirror
Group, it is the Optical devices equal with single bar of semiconductor laser number, is arranged on the light direction of semiconductor laser, is used for
It is beam of laser that multiple laser light beam after multiple single bar of semiconductor lasers are collimated, which closes beam,.
The Optical devices are combinations one or more kinds of in completely reflecting mirror, semi-transparent semi-reflecting lens and polarizer.
The Optical devices are connected with driving part so that Optical devices produce in the same direction or anti-in the exit direction of laser
To displacement.
The driving part is motor, or manual driving device.
The collimation microscope group includes fast axis collimation mirror and/or slow axis collimating mirror.
The semiconductor laser light resource for narrow gap welding also includes convergence apparatus, for by the laser light after collimation
The secondary convergences of Shu Jinhang so that sheet beam is converted into the high hot spot of energy density.Convergence apparatus is specially condenser lens, such as
Convex lens.
The present invention has the advantage that：
1）The beam quality of semiconductor laser fast and slow axis, slow axis divergence is big, but can be connect on quick shaft direction
The limit of dipped beam beam quality, final operation light spot is approximate rectangular, the distribution of class Gauss is presented on quick shaft direction, in slow axis side
The distribution of class flat-top is presented upwards, compared with other lasers, there is higher welding efficiency and welding in narrow gap welding
Effect, in addition, optical shaping scheme of the present invention compares existing scheme, there is lower cost, in actual applications
There is higher promotional value.
2）Translation can occur for the position of the light combination mirror group in the present invention, so as to change the width of output beam and energy point
Cloth, it is possible to achieve the motionless swing welding of laser head, while the high energy distribution demand of sidewall weld can be realized, have higher
Reliability and application.
Brief description of the drawings
Fig. 1-1 is the fast axle light path principle figure of semiconductor laser light resource one embodiment of the present invention.
Fig. 1-2 is the slow axis light path principle figure of semiconductor laser light resource one embodiment of the present invention.
Fig. 2 is the schematic diagram for the embodiment that multiple semiconductor lasers are used in combination.
Fig. 3 is the displacement embodiment one of the Optical devices in light combination mirror group.
Fig. 4 is the displacement embodiment two of the Optical devices in light combination mirror group.
Drawing reference numeral explanation：1- semiconductor lasers, 2- fast axis collimation mirrors, 3- slow axis collimating mirrors, 4- light combination mirror groups, 5- meetings
Poly- device, 6- energy profiles, 7- slab workpiece.
Embodiment
The invention provides a kind of semiconductor laser light resource for narrow gap welding, including semiconductor laser and collimation
Microscope group.Fig. 1-1 and Fig. 1-2 is that its semiconductor laser 1 is multiple single bar of semiconductor laser edges based on embodiments of the invention
Its quick shaft direction stacks the semiconductor laser stacks formed, and collimation microscope group includes fast axis collimation mirror 2 and slow axis collimating mirror 3, accurate
The dispersion angle of laser beam quick shaft direction after straight<5 degree, while the angle of divergence of slow-axis direction is between 5 ~ 60 degree, and pass through
Light combination mirror group 4 closes beam and make it that laser beam is approximately blade-like.Light beam can straight cutting enter narrow gap bottom and focus on form class rectangle
Hot spot, narrow gap welding is completed with higher efficiency and welding quality.
Fig. 1-1 is light path of the above-mentioned semiconductor laser light resource in quick shaft direction, and the multi beam that semiconductor laser 1 is sent is parallel
For laser beam after fast axis collimation mirror 2, slow axis collimating mirror 3 collimate, it is 1 beam laser beam to close beam by light combination mirror group 4.Light combination mirror group
Including the Optical devices equal with single bar of semiconductor laser number, it is arranged on the light direction of semiconductor laser, finally
Energy distribution of the obtained laser in fast axle is Gaussian Profile.
In practical engineering application, beam is closed typically using multi-wavelength coupling, the conjunction beam mode of polarization coupled；Corresponding optics
Device is completely reflecting mirror, polarising means, semi-transparent semi-reflecting lens etc..In Fig. 1-1, Optical devices are respectively arranged at corresponding single bar half
On the light direction of conductor laser, and it is in 45 degree with laser beam, by multiple single bars half by way of transmiting, reflect combination
The laser beam of conductor laser is combined into 1 beam.In general, Optical devices a is completely reflecting mirror, and Optical devices b is semi-transparent semi-reflecting
Lens or the lens for selecting to pass through to wavelength.
The above-mentioned semiconductor laser light resources of Fig. 1-2 due to collimation microscope group and close beam in slow axis light path in the light path of slow-axis direction
The not easy-to-use two dimension view expression of microscope group, therefore eliminate the structure.The light spot energy point that laser beam finally gives in slow-axis direction
Cloth is flat-top distribution.
In order to improve power output, the present invention, which can further be optimized for using, to be made combining for multiple semiconductor lasers
With.Fig. 2 is the embodiment being used in combination of 3 groups of semiconductor lasers, and 3 groups of semiconductor lasers are arranged successively along its slow-axis direction
Row, to obtain the blade-like light beam in the larger width of slow-axis direction, the light beam completely can enter in narrow gap weld seam.This
Outside, the present embodiment increase convergence apparatus 5, the laser beam of 3 groups of semiconductor lasers is finally converted into the point of high power density
Hot spot, improve welding efficiency.
The defects of in order to further optimize narrow gap welding side wall incomplete fusion, the present invention propose to translate along Laser output direction
The method of light combination mirror group, the Energy distribution of narrow gap side wall can be controlled, so that it is guaranteed that welding quality.
Fig. 3 is the displacement embodiment one of the Optical devices in light combination mirror group, and along the light direction of laser, part translation closes beam
Optical devices in microscope group（Double-head arrow in Fig. 3 is the moveable direction of Optical devices）, pool size can be increased.Such as will
Optical devices c is moved along laser emitting direction, while Optical devices d is reversed into movement to Optical devices c direction of displacement.
Fig. 4 is the displacement embodiment two of the Optical devices in light combination mirror group, and along the light direction of laser, light combination mirror group is made
Translated, can be adjusted according to weld width for an entirety, the translation reference of three light combination mirror groups 4 is denoted in Fig. 4
Position, light combination mirror group 4 can indicate the dotted line position that direction is moved to Fig. 4 according to double-head arrow, realize the motionless swing of laser head
Welding, while the high energy distribution demand of sidewall weld can be realized.
The Optical devices of above-mentioned light combination mirror group are connected with external drive device, to realize translational motion, external drive device
Can be motor, can also manual actuation.
Claims (5)
- A kind of 1. semiconductor laser light resource for narrow gap welding, it is characterised in that：Including semiconductor laser, microscope group is collimated And light combination mirror group；The semiconductor laser is used to launch laser beam, and specially multiple single bar of semiconductor lasers are along its quick shaft direction heap It is folded to form；The collimation microscope group, the light direction of semiconductor laser is arranged at, for compressing the angle of divergence of shoot laser so that on State the fast axis divergence angle of laser<5 degree, and slow axis divergence is between 5 ~ 60 degree；The light combination mirror group is the Optical devices equal with single bar of semiconductor laser number, is arranged at going out for semiconductor laser On light direction, it is beam of laser to close beam for the multiple laser light beam after multiple single bar of semiconductor lasers are collimated, and closes Shu Ji Energy distribution of the light in fast axle is Gaussian Profile, and flat-top distribution is distributed as on slow axis energy；The Optical devices are connected with driving part so that Optical devices produce in the same direction or reverse in the exit direction of laser Displacement.
- A kind of 2. semiconductor laser light resource for narrow gap welding according to claim 1, it is characterised in that：The light Device is combinations one or more kinds of in completely reflecting mirror, semi-transparent semi-reflecting lens and polarizer.
- A kind of 3. semiconductor laser light resource for narrow gap welding according to claim 1, it is characterised in that：The drive Dynamic component is motor, or manual driving device.
- A kind of 4. semiconductor laser light resource for narrow gap welding according to claim 1, it is characterised in that：The standard Straight microscope group includes fast axis collimation mirror and slow axis collimating mirror.
- A kind of 5. semiconductor laser light resource for narrow gap welding according to claim 1, it is characterised in that：Also include Convergence apparatus, for the laser beam after collimation to be carried out into secondary convergence.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201610524670.2A CN105945424B (en) | 2016-07-06 | 2016-07-06 | A kind of semiconductor laser light resource for narrow gap welding |
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| CN201610524670.2A CN105945424B (en) | 2016-07-06 | 2016-07-06 | A kind of semiconductor laser light resource for narrow gap welding |
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| CN105945424A CN105945424A (en) | 2016-09-21 |
| CN105945424B true CN105945424B (en) | 2018-02-09 |
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Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106808087B (en) * | 2017-02-13 | 2018-12-21 | 江苏华博数控设备有限公司 | A kind of method of workpiece deformation quantity after reduction laser melting coating |
| CN114406462A (en) * | 2022-02-18 | 2022-04-29 | 江苏星链激光科技有限责任公司 | Laser welding system and light spot track control method thereof |
Citations (5)
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| CN101943802A (en) * | 2010-08-26 | 2011-01-12 | 中国科学院长春光学精密机械与物理研究所 | Optical device for hardening steel rail by using high-power semiconductor laser in running of train |
| CN102324699A (en) * | 2011-09-22 | 2012-01-18 | 西安炬光科技有限公司 | A kind of high-power semiconductor laser light-source system that is used for laser processing |
| CN105149786A (en) * | 2015-10-19 | 2015-12-16 | 哈尔滨工业大学 | Narrow-gap laser-scanning multi-layer self-melting welding method based on prefabricated welding materials |
| CN205141362U (en) * | 2015-11-17 | 2016-04-06 | 山东圣达激光科技有限公司 | Adopt semiconductor laser's of bi -polar fiber optic coupling output laser system |
| CN205834485U (en) * | 2016-07-06 | 2016-12-28 | 西安炬光科技股份有限公司 | A kind of semiconductor laser light resource for narrow gap welding |
Family Cites Families (2)
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| US6770546B2 (en) * | 2001-07-30 | 2004-08-03 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing semiconductor device |
| CA2358201A1 (en) * | 2001-10-03 | 2003-04-03 | Creo Products Inc. | Method and apparatus for illuminating a spatial light modulator |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101943802A (en) * | 2010-08-26 | 2011-01-12 | 中国科学院长春光学精密机械与物理研究所 | Optical device for hardening steel rail by using high-power semiconductor laser in running of train |
| CN102324699A (en) * | 2011-09-22 | 2012-01-18 | 西安炬光科技有限公司 | A kind of high-power semiconductor laser light-source system that is used for laser processing |
| CN105149786A (en) * | 2015-10-19 | 2015-12-16 | 哈尔滨工业大学 | Narrow-gap laser-scanning multi-layer self-melting welding method based on prefabricated welding materials |
| CN205141362U (en) * | 2015-11-17 | 2016-04-06 | 山东圣达激光科技有限公司 | Adopt semiconductor laser's of bi -polar fiber optic coupling output laser system |
| CN205834485U (en) * | 2016-07-06 | 2016-12-28 | 西安炬光科技股份有限公司 | A kind of semiconductor laser light resource for narrow gap welding |
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