CN105945293A - High-hardness high-conductivity CuCr25 contact material and preparation method and application thereof - Google Patents
High-hardness high-conductivity CuCr25 contact material and preparation method and application thereof Download PDFInfo
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- 239000000463 material Substances 0.000 title claims description 43
- 238000002360 preparation method Methods 0.000 title abstract description 15
- 239000000843 powder Substances 0.000 claims abstract description 91
- 238000005245 sintering Methods 0.000 claims abstract description 79
- 239000000956 alloy Substances 0.000 claims abstract description 43
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 40
- 238000000034 method Methods 0.000 claims abstract description 35
- 238000000498 ball milling Methods 0.000 claims abstract description 23
- 239000011812 mixed powder Substances 0.000 claims abstract description 11
- 238000001291 vacuum drying Methods 0.000 claims abstract description 8
- 238000000227 grinding Methods 0.000 claims description 24
- 239000000203 mixture Substances 0.000 claims description 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 9
- 229910002804 graphite Inorganic materials 0.000 claims description 9
- 239000010439 graphite Substances 0.000 claims description 9
- 238000010438 heat treatment Methods 0.000 claims description 9
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 8
- 229960000935 dehydrated alcohol Drugs 0.000 claims description 8
- 229910000831 Steel Inorganic materials 0.000 claims description 7
- 238000009413 insulation Methods 0.000 claims description 7
- 239000010959 steel Substances 0.000 claims description 7
- 238000010792 warming Methods 0.000 claims description 7
- 238000001035 drying Methods 0.000 claims description 2
- 230000005611 electricity Effects 0.000 claims description 2
- 238000005498 polishing Methods 0.000 claims description 2
- 230000000630 rising effect Effects 0.000 claims description 2
- 238000005070 sampling Methods 0.000 claims description 2
- 238000005516 engineering process Methods 0.000 abstract description 8
- 239000002994 raw material Substances 0.000 abstract description 8
- 230000008901 benefit Effects 0.000 abstract description 6
- 238000005265 energy consumption Methods 0.000 abstract description 3
- 238000002490 spark plasma sintering Methods 0.000 abstract 5
- 239000010949 copper Substances 0.000 description 27
- 230000008569 process Effects 0.000 description 6
- 238000001816 cooling Methods 0.000 description 5
- 238000000643 oven drying Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000001764 infiltration Methods 0.000 description 3
- 230000008595 infiltration Effects 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 238000003912 environmental pollution Methods 0.000 description 2
- 230000004927 fusion Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- -1 1000 DEG C) Chemical compound 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 238000001994 activation Methods 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000003701 mechanical milling Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000000678 plasma activation Methods 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/10—Sintering only
- B22F3/105—Sintering only by using electric current other than for infrared radiant energy, laser radiation or plasma ; by ultrasonic bonding
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/02—Compacting only
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F9/00—Making metallic powder or suspensions thereof
- B22F9/02—Making metallic powder or suspensions thereof using physical processes
- B22F9/04—Making metallic powder or suspensions thereof using physical processes starting from solid material, e.g. by crushing, grinding or milling
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/04—Making non-ferrous alloys by powder metallurgy
- C22C1/0425—Copper-based alloys
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H11/00—Apparatus or processes specially adapted for the manufacture of electric switches
- H01H11/04—Apparatus or processes specially adapted for the manufacture of electric switches of switch contacts
- H01H11/048—Apparatus or processes specially adapted for the manufacture of electric switches of switch contacts by powder-metallurgical processes
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F9/00—Making metallic powder or suspensions thereof
- B22F9/02—Making metallic powder or suspensions thereof using physical processes
- B22F9/04—Making metallic powder or suspensions thereof using physical processes starting from solid material, e.g. by crushing, grinding or milling
- B22F2009/043—Making metallic powder or suspensions thereof using physical processes starting from solid material, e.g. by crushing, grinding or milling by ball milling
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Abstract
The invention discloses a high-pressure low-temperature spark plasma sintering (SPS) quick preparation method of high-hardness high-conductivity CuCr25 alloy. The method comprises the steps that CuCr alloy powder is prepared through a mechanical ball milling method, and the raw material powder Cu and the raw material powder Cr are put into a ball milling tank with the mass ratio being 3:1; vacuumizing is conducted till the pressure is 0.1 Pa, ball milling is conducted, the ball milling rotating speed is 60-100 r/min, and the ball milling time is 5-6 h; the alloy powder is subjected to vacuum drying and then subjected to SPS, the sintering pressure is 100-300 MPa, the sintering temperature is 500-600 DEG C, and heat is preserved for 5-10 min at the highest temperature; and after a sample is cooled to the room temperature and milled slightly, the finished product is obtained. According to the high-pressure low-temperature SPS quick preparation method of the high-hardness high-conductivity CuCr25 alloy, the CuCr25 alloy mixed powder is prepared through the mechanical ball milling method, and ultralow-temperature ultrahigh-pressure sintering of the CuCr25 alloy is achieved through the SPS technology; by means of the high-pressure low-temperature SPS quick preparation method, the CuCr alloy which is high in compactness and excellent in mechanical property can be prepared; and compared with existing methods, the preparation method has the advantages of being simple in preparation process, capable of reducing energy consumption and environment pollution and superior in performance.
Description
Technical field
The invention belongs to field of alloy material preparation, be specifically related to a kind of high rigidity high conductivity CuCr25 alloy high pressure low temperature SPS
(discharge plasma sintering) fast preparation method.
Background technology
CuCr alloy is widely used in contact material due to its excellent electric conductivity and superior economy.The conductivity of Cu is high,
Electric property is good, and the hardness of Cr is high, and mechanical property is good, and what CuCr contact material leaned on is solid solubility extremely low between two elements,
Form equally distributed biphase pseudo-alloy, be effectively compounded with the superiority of Cu, Cr each constituent element.It has and has high point
Cutting capacity, the fusion welding resisting ability of relatively low dam value and excellence, have high intensity and hardness, good electrical and thermal conductivity simultaneously
Deng many advantages.In recent years, along with device for switching is to Large Copacity, the development in high voltage direction, it is desirable to contact material has higher
Electric conductivity and mechanical property.
The traditional method preparing CuCr contact material at present mainly has powder metallurgic method, infiltration method and fusion casting three kinds.Improve CuCr
The method of alloy property mainly has: (1) adds third phase element；(2) technological parameter or the invention of new technology are improved.Conventional heat
The sintering temperature of pressure sintering and melting infiltration sintering generally carries out liquid-phase sintering near the fusing point of copper (i.e. 1000 DEG C), and the time generally needs
Wanting 1.5h, sintering time is long, the problems such as big, the component segregation of crystal grain easily occurs.
Mechanical attrition method is a kind of method of effective preparation micropowder.The method is mainly by high in mechanical grinding process
Speed run hard ball and abrasive body between mutually collide, along with the continuity of mechanical milling process, powder particle is repeated clinkering,
Fracture, clinkering again, the defect concentration of particle surface increases, and crystal grain gradually refines.Mechanical attrition method helps so that CuCr powder
End mix homogeneously, metal dust refines, plays the effect of dispersion-strengtherning.Powder activity prepared by mechanical attrition method is big, it is easy to burn
Knot, and the multicomponent doping of metal dust can be realized.
Discharge plasma sintering (SPS) technology is to make to be sintered each granule in internal portion by the plasma discharging of instantaneous generation
Heating and particle surface activation equably, thus there is the highest thermal efficiency and can make to be sintered body within the extremely short time
Reach fine and close feature.Discharge plasma sintering technique melts plasma activation, hot pressing, resistance are heated to be one, thus has liter
Speed is fast, sintering time is short for temperature, homogeneous grain size, beneficially the control fine structure of sintered body, the material density of acquisition
The advantages such as height, performance are good.Utilize this technology to sinter CuCr alloy powder material, can realize high-quality and efficient, low consumption low cost
The preparation process of CuCr alloy material.
Summary of the invention
It is an object of the invention to provide CuCr25 contact material and fast preparation method, the party of a kind of high rigidity high conductivity
Method has that preparation technology is simple, reduce energy consumption, reduce environmental pollution, the advantage of superior performance.
The technical scheme that the present invention provides is specific as follows:
A kind of quick method preparing CuCr25 contact material, comprises the following steps:
(1) by Cu powder that mass ratio is 3:1 and Cr powder mix homogeneously, mixed powder is formed；Mixed powder is placed in ball grinder,
The weight ratio of mixed powder and abrading-ball is 1:7-10；Then 10%～15% interpolation dehydrated alcohol of mixed powder gross mass, ball sealer are pressed
Grinding jar, is evacuated to 0.1Pa；Set rotational speed of ball-mill as 100r/min, Ball-milling Time as 5～6h, carry out ball milling and mix powder, obtain
Cu powder and the alloy powder of Cr powder；
(2) alloy powder that step (1) obtains is placed in vacuum drying oven, sets drying temperature and be less than 80 DEG C, dry
5h；
(3) product that step (2) obtains is put in the SiC mould of a diameter of 10～20mm and suppress, SiC mould inner surface
Wrap one layer of graphite paper, SiC mould is placed in discharge plasma equipment, first evacuation, after vacuum reaches 0.1～1Pa,
It is warming up to sintering temperature with the heating rate of 50～100 DEG C/min, sintering pressure, heat-insulation pressure keeping when rising to sintering temperature, will be risen to
5min～10min, is then cooled to less than 200 DEG C, then takes out SiC mould, naturally cools to room temperature, sampling；Wherein,
Sintering temperature is 500～600 DEG C, and sintering pressure is 100～300Mpa；
(4) sample outer surface polishing step (3) obtained, i.e. obtains CuCr25 contact material.
Described Cu powder and the purity of Cr powder are all higher than 99.5%.
Described Cu powder and the granularity of Cr powder are respectively less than 200 mesh.
The material of described abrading-ball is rustless steel, a diameter of 10mm of abrading-ball.
A kind of CuCr25 contact material, is prepared by the method for the above-mentioned quick CuCr25 of preparation contact material.
Above-mentioned CuCr25 contact material is in the application of electricity field.
Further illustrating as such scheme, in step (1), ratio of grinding media to material should be between 7～10, and the ball milling of raw material powder is thin
Change effect and the effect guarantee of mix homogeneously；Dehydrated alcohol accounts for the 10%～15% of mixed powder quality, both can reduce powder ball
Pollution during mill, can preferably refine again powder, makes alloy powder mixing more uniform；Rotational speed of ball-mill is less than 100r/min,
Ball-milling Time is less than 6h, and rotating speed is the highest, and Ball-milling Time is oversize, and the reunion between powder can be caused serious, and spherical tank direct collision is excessively
Fierceness can introduce impurity.
The product that step (2) obtains is put into discharge plasma sintering in the SiC mould of a diameter of 10mm；This is because electric discharge
The graphite jig used in plasma agglomeration, at most can only bear the pressure of 50MPa, causes the sample consistency after sintering inadequate
Height, affects the performance of material, also cannot show the superiority of discharge plasma sintering.SiC mould inner surface wraps one layer of graphite
Paper, this is to separate taking-up for the ease of sintered specimen with grinding tool, also can improve its electric conductivity simultaneously, be conducive to the stability of sintering.
In step (3), heating rate is 50 DEG C～100 DEG C/min, in temperature-rise period, does not apply external pressure；Rise to maximum temperature
Time sintering pressure is risen to sintering pressure；Sintering temperature is the highest, and sintering pressure improves the most accordingly, and just can reach close to 600 DEG C
To 300MPa；Sample so can be effectively prevented to be deformed in sintering process and ftracture；Discharge plasma sintering temperature is not
More than 600 DEG C, and sintering time is less than 10min, but remains to obtain the sintered products that consistency is high, grain size is little；Can not only
Enough prepare the CuCr alloy of function admirable, and be capable of ultralow temperature ultra-high pressure condition compacted under, the time-consuming and energy.
Compared with prior art, the present invention has the following advantages that and beneficial effect:
The present invention prepares CuCr25 mixed powder for alloy by mechanical attrition method and uses discharge plasma sintering technology to realize
The ultralow temperature ultra-high pressure sintering of CuCr25 alloy, by this method, can prepare high fine and close, the CuCr of excellent mechanical performance
Alloy, compared with the conventional method, the method also has that preparation technology is simple, reduce energy consumption, reduce environmental pollution, superior performance
Advantage.
Detailed description of the invention
The present invention is expanded on further below by embodiment.
Embodiment 1
(1) raw material Cu powder and Cr powder (granularity of Cu powder and Cr powder is both less than 200 mesh) are placed in ball by 3:1 in mass ratio
In grinding jar, Material quality of grinding balls is rustless steel, a diameter of 10mm of ball, ratio of grinding media to material 8:1, and presses Cu powder and Cr powder gross mass
10wt%～15wt% adds dehydrated alcohol, ball sealer grinding jar, is evacuated to 0.1Pa, and rotational speed of ball-mill is 100r/min, Ball-milling Time
Carry out ball milling for 5h and mix powder, obtain Cu powder and the alloy powder of Cr powder；
(2) alloy powder that step (1) obtains is placed in vacuum drying oven drying 5h, sets and dry temperature less than 80 DEG C；
(3) being put into by the product that step (2) obtains in the SiC mould of a diameter of 10mm and suppress, SiC mould inner surface is wrapped up in
Cover one layer of graphite paper, SiC mould is placed in discharge plasma equipment sintering；First evacuation during discharge plasma sintering,
After vacuum reaches 0.1Pa, it is warming up to sintering temperature with 100 DEG C/min of heating rate, rises to during sintering temperature, be forced into sintering pressure
Power, wherein, sintering pressure 100MPa, sintering temperature 600 DEG C；At sintering temperature heat-insulation pressure keeping 5min, it is subsequently cooled to 200 DEG C
Hereinafter take out SiC mould afterwards, sample after naturally cooling to room temperature；
(4) the sample outer surface that step (3) obtains slightly is polished, i.e. obtain CuCr25 contact material.
Embodiment 2
(1) raw material Cu powder and Cr powder (granularity of Cu powder and Cr powder is both less than 200 mesh) are placed in ball by 3:1 in mass ratio
In grinding jar, Material quality of grinding balls is rustless steel, a diameter of 10mm of ball, ratio of grinding media to material 8:1, and presses Cu powder and Cr powder gross mass
10wt%～15wt% adds dehydrated alcohol, ball sealer grinding jar, is evacuated to 0.1Pa, and rotational speed of ball-mill is 100r/min, Ball-milling Time
Carry out ball milling for 5h and mix powder, obtain Cu powder and the alloy powder of Cr powder；
(2) alloy powder that step (1) obtains is placed in vacuum drying oven drying 5h, sets and dry temperature less than 80 DEG C；
(3) being put into by the product that step (2) obtains in the SiC mould of a diameter of 10mm and suppress, SiC mould inner surface is wrapped up in
Cover one layer of graphite paper, SiC mould is placed in discharge plasma equipment sintering；First evacuation during discharge plasma sintering,
After vacuum reaches 0.1Pa, it is warming up to sintering temperature with 100 DEG C/min of heating rate, rises to during sintering temperature, be forced into sintering pressure
Power, wherein, sintering pressure 150MPa, sintering temperature 600 DEG C；At sintering temperature heat-insulation pressure keeping 5min, it is subsequently cooled to 200 DEG C
Hereinafter take out SiC mould afterwards, sample after naturally cooling to room temperature；
(4) the sample outer surface that step (3) obtains slightly is polished, i.e. obtain CuCr25 contact material.
Embodiment 3
(1) raw material Cu powder and Cr powder are put (granularity of Cu powder and Cr powder is both less than 200 mesh) in ball by 3:1 in mass ratio
In grinding jar, Material quality of grinding balls is rustless steel, a diameter of 10mm of ball, and ball material is 8:1, and presses Cu powder and Cr powder gross mass
10wt%～15wt% adds dehydrated alcohol, ball sealer grinding jar, is evacuated to 0.1Pa, when setting rotational speed of ball-mill 100r/min, ball milling
Between carry out ball milling for 5h and mix powder, obtain Cu powder and the alloy powder of Cr powder；
(2) alloy powder that step (1) obtains is placed in vacuum drying oven drying 5h, sets and dry temperature less than 80 DEG C；
(3) being put into by the product that step (2) obtains in the SiC mould of a diameter of 10mm and suppress, SiC mould inner surface is wrapped up in
Cover one layer of graphite paper, SiC mould is placed in discharge plasma equipment sintering；First evacuation during discharge plasma sintering,
After vacuum reaches 0.1Pa, it is warming up to sintering temperature with 100 DEG C/min of heating rate, rises to during sintering temperature, be forced into sintering pressure
Power, wherein, sintering pressure 200MPa, sintering temperature 600 DEG C；At sintering temperature heat-insulation pressure keeping 5min, it is subsequently cooled to 200 DEG C
Hereinafter take out SiC mould afterwards, sample after naturally cooling to room temperature；
(4) the sample outer surface that step (3) obtains slightly is polished, i.e. obtain CuCr25 contact material.
Embodiment 4
(1) raw material Cu powder and Cr powder (granularity of Cu powder and Cr powder is both less than 200 mesh) are placed in ball by 3:1 in mass ratio
In grinding jar, Material quality of grinding balls is rustless steel, a diameter of 10mm of ball, ratio of grinding media to material 8:1, and presses Cu powder and Cr powder gross mass
10wt%～15wt% adds dehydrated alcohol, ball sealer grinding jar, is evacuated to 0.1Pa, when setting rotational speed of ball-mill 100r/min, ball milling
Between carry out ball milling for 5h and mix powder, obtain Cu powder and the alloy powder of Cr powder；
(2) alloy powder that step (1) obtains is placed in vacuum drying oven drying 5h, sets and dry temperature less than 80 DEG C；
(3) being put into by the product that step (2) obtains in the SiC mould of a diameter of 10mm and suppress, SiC mould inner surface is wrapped up in
Cover one layer of graphite paper, SiC mould is placed in discharge plasma equipment sintering；First evacuation during discharge plasma sintering,
After vacuum reaches 0.1Pa, it is warming up to sintering temperature with 100 DEG C/min of heating rate, rises to during sintering temperature, be forced into sintering pressure
Power, wherein, sintering pressure 250MPa, sintering temperature 600 DEG C；At sintering temperature heat-insulation pressure keeping 5min, it is subsequently cooled to 200 DEG C
Hereinafter take out SiC mould afterwards, sample after naturally cooling to room temperature；
(4) the sample outer surface that step (3) obtains slightly is polished, i.e. obtain CuCr25 contact material.
Embodiment 5
(1) raw material Cu powder and Cr powder (granularity of Cu powder and Cr powder is both less than 200 mesh) are placed in ball by 3:1 in mass ratio
In grinding jar, Material quality of grinding balls is rustless steel, a diameter of 10mm of ball, and ratio of grinding media to material is 8:1, and presses Cu powder and Cr powder gross mass
10wt%～15wt% adds dehydrated alcohol, ball sealer grinding jar, is evacuated to 0.1Pa, sets rotational speed of ball-mill as 100r/min, ball milling
Time is that 5h carries out ball milling and mixes powder, obtains Cu powder and the alloy powder of Cr powder；
(2) alloy powder that step (1) obtains is placed in vacuum drying oven drying 5h, sets and dry temperature less than 80 DEG C；
(3) being put into by the product that step (2) obtains in the SiC mould of a diameter of 10mm and suppress, SiC mould inner surface is wrapped up in
Cover one layer of graphite paper, SiC mould is placed in discharge plasma equipment sintering；First evacuation during discharge plasma sintering,
After vacuum reaches 0.1Pa, it is warming up to sintering temperature with 100 DEG C/min of heating rate, rises to during sintering temperature, be forced into sintering pressure
Power, wherein, sintering pressure 300MPa, sintering temperature 600 DEG C；At sintering temperature heat-insulation pressure keeping 5min, it is subsequently cooled to 200 DEG C
Hereinafter take out SiC mould afterwards, sample after naturally cooling to room temperature；
(4) the sample outer surface that step (3) obtains slightly is polished, i.e. obtain CuCr25 contact material.
Measure electrical conductivity with eddy current device, measure consistency with drainage, measure Vickers hardness at microhardness testers (load),
Data result is shown in Table 1.
Contrast test: under normal circumstances, the hardness of CuCr50 alloy and consistency are outstanding than CuCr25 alloy.600 DEG C,
The CuCr25 alloy series sample that the SPS sintering process of 300Mpa obtains and the main power of CuCr50 alloy prepared by other method
Learn and the comparison of physical property, be shown in Table 2.
According to the data in table 1 it can be seen that along with the increase of sintering pressure, consistency and the electrical conductivity of alloy have had significantly
Improving, the raising of consistency and electrical conductivity is proportionate with the increase of pressure.More than 200MPa pressure sintering time the most available
Consistency is up to the dense alloy of more than 99%.
Data from table 2 can be seen that the CuCr25 alloy material obtained after cryogenic high pressure SPS sinters is a kind of performance
Outstanding CuCr25 contact material.According in table 2 data contrast it can be seen that by this process (600 DEG C, 300MPa
Lower SPS sinters) consistency of CuCr25 contact material prepared and hardness and conventional fabrication process infiltration method and hot pressed sintering
The CuCr50 that method obtains is on close level, and the CuCr25 alloy rigidity (100HV) comparing conventional method prepared improves 34.5%,
But its electrical conductivity is 2.0 times of common process the most respectively.
The performance of CuCr25 alloy sample under different pressures at 1 600 DEG C of table
| Performance | 100Mpa | 150Mpa | 200Mpa | 250Mpa | 300Mpa |
| Consistency/% | 96.9 | 98.3 | 98.4 | 99.5 | 99.6 |
| Conductance/MS m-1 | 32.0 | 33.1 | 33.7 | 35.0 | 35.6 |
| Hardness/HV | 121.0 | 126.5 | 130.0 | 130.5 | 134.5 |
The performance of the CuCr alloy sample that table 2 distinct methods prepares
Above in association with specific embodiment, embodiments of the present invention are explained in detail, but the present invention is not limited to described enforcement
Mode, can be in the ken that possessed of one skilled in the relevant art, it is also possible in the premise without departing from present inventive concept
Under make a variety of changes.
Claims (6)
1. the quick method preparing CuCr25 contact material, it is characterised in that comprise the following steps:
(1) by Cu powder that mass ratio is 3:1 and Cr powder mix homogeneously, mixed powder is formed；Mixed powder is placed in ball grinder,
The weight ratio of mixed powder and abrading-ball is 1:7-10；Then 10%～15% interpolation dehydrated alcohol of mixed powder gross mass, ball sealer are pressed
Grinding jar, is evacuated to 0.1Pa；Set rotational speed of ball-mill as 100r/min, Ball-milling Time as 5～6h, carry out ball milling and mix powder, obtain
Cu powder and the alloy powder of Cr powder；
(2) alloy powder that step (1) obtains is placed in vacuum drying oven, sets drying temperature and be less than 80 DEG C, dry
5h；
(3) product that step (2) obtains is put in the SiC mould of a diameter of 10～20mm and suppress, SiC mould inner surface
Wrap one layer of graphite paper, SiC mould is placed in discharge plasma equipment, first evacuation, after vacuum reaches 0.1～1Pa,
It is warming up to sintering temperature with the heating rate of 50～100 DEG C/min, sintering pressure, heat-insulation pressure keeping when rising to sintering temperature, will be risen to
5min～10min, is then cooled to less than 200 DEG C, then takes out SiC mould, naturally cools to room temperature, sampling；Wherein,
Sintering temperature is 500～600 DEG C, and sintering pressure is 100～300Mpa；
(4) sample outer surface polishing step (3) obtained, i.e. obtains CuCr25 contact material.
The quick method preparing CuCr25 contact material the most according to claim 1, it is characterised in that: described Cu
The purity of powder and Cr powder is all higher than 99.5%.
The quick method preparing CuCr25 contact material the most according to claim 1, it is characterised in that: described Cu
The granularity of powder and Cr powder is respectively less than 200 mesh.
The quick method preparing CuCr25 contact material the most according to claim 1, it is characterised in that: described abrading-ball
Material is rustless steel, a diameter of 10mm of abrading-ball.
5. a CuCr25 contact material, it is characterised in that: by quickly preparing CuCr25 described in any one of claim 1-4
The method of contact material prepares.
6. the CuCr25 contact material described in claim 5 is in the application of electricity field.
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| JP7524675B2 (en) | 2020-08-26 | 2024-07-30 | 住友金属鉱山株式会社 | Manufacturing method of rare earth iron garnet sintered body |
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| CN114628178A (en) * | 2022-03-16 | 2022-06-14 | 桂林金格电工电子材料科技有限公司 | Preparation method of copper-chromium contact consumable electrode |
| CN114628178B (en) * | 2022-03-16 | 2024-03-19 | 桂林金格电工电子材料科技有限公司 | Preparation method of consumable electrode of copper-chromium contact |
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Application publication date: 20160921 |