CN105932141A - Fluorescent powder component and white light-emitting device employing same - Google Patents
Fluorescent powder component and white light-emitting device employing same Download PDFInfo
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- CN105932141A CN105932141A CN201610316702.XA CN201610316702A CN105932141A CN 105932141 A CN105932141 A CN 105932141A CN 201610316702 A CN201610316702 A CN 201610316702A CN 105932141 A CN105932141 A CN 105932141A
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- 239000000843 powder Substances 0.000 title claims abstract description 59
- 229910017464 nitrogen compound Inorganic materials 0.000 claims abstract description 38
- 150000002830 nitrogen compounds Chemical class 0.000 claims abstract description 19
- -1 calcium aluminum silicon Chemical compound 0.000 claims abstract description 14
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 10
- 239000001301 oxygen Substances 0.000 claims abstract description 10
- RWLIDFDVLWSKTE-UHFFFAOYSA-N [Si].[N].[La] Chemical compound [Si].[N].[La] RWLIDFDVLWSKTE-UHFFFAOYSA-N 0.000 claims abstract description 9
- 239000000463 material Substances 0.000 claims description 98
- 239000000203 mixture Substances 0.000 claims description 41
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 7
- 239000012790 adhesive layer Substances 0.000 claims description 6
- 150000004767 nitrides Chemical class 0.000 claims description 5
- 238000001228 spectrum Methods 0.000 description 10
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 6
- 239000004411 aluminium Substances 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 239000002223 garnet Substances 0.000 description 5
- 229920006395 saturated elastomer Polymers 0.000 description 5
- 229910052727 yttrium Inorganic materials 0.000 description 5
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 229910003564 SiAlON Inorganic materials 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910052693 Europium Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000004575 stone Substances 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 241001062009 Indigofera Species 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- TVGGZXXPVMJCCL-UHFFFAOYSA-N [Si].[La] Chemical compound [Si].[La] TVGGZXXPVMJCCL-UHFFFAOYSA-N 0.000 description 1
- PSNPEOOEWZZFPJ-UHFFFAOYSA-N alumane;yttrium Chemical compound [AlH3].[Y] PSNPEOOEWZZFPJ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical compound [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/59—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing silicon
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/64—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing aluminium
- C09K11/646—Silicates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
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- Chemical & Material Sciences (AREA)
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- Inorganic Chemistry (AREA)
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- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Luminescent Compositions (AREA)
Abstract
The invention provides a fluorescent powder component and a white light-emitting device employing the same, so as to solve the above known problems and achieve a high-quality white light source. The device comprises a blue light-emitting diode and the fluorescent powder component disposed on the blue light-emitting diode. The fluorescent powder component comprises a yellow lanthanum silicon nitrogen compound, a yellow beta-silicon aluminum oxygen nitrogen compound and a red calcium aluminum silicon compound, wherein the ratio of the weight percentages of the yellow lanthanum silicon nitrogen compound, the yellow beta-silicon aluminum oxygen nitrogen compound and the red calcium aluminum silicon compound is 1: 1: 0.3-0.45.
Description
The application is to apply on August 2nd, 2011, and Application No. 201110218861.3 is invention entitled
The division of the application for a patent for invention of " white light emitting device that fluorescent material forms and uses this fluorescent material to form "
Application
Technical field
The invention relates to a kind of fluorescent material composition and the white light emitting device using this fluorescent material to form, and
In particular to a kind of, there is preferable light type, the fluorescent material composition of thermally-stabilised and noenergy saturation problem and white
Color light-emitting device.
Background technology
Based on carbon reduction and the environmental consciousness of Sustainable Development, advanced person various countries of the current world are all phased out height
The traditional lighting of power consumption, and then select white light-emitting diode.The advantage of white light-emitting diode is that volume is little,
Can adjust with fit applications equipment, its response speed is fast, is therefore especially suitable for high-frequency operation.White luminous
The power consumption of diode is low, only the 1/8 to 1/10 of conventional bulb, the 1/2 of daylight lamp, and its life-span is long,
Up to more than 100,000 hours, the problem that incandescent lamp bulb highly energy-consuming can be solved, its can as new illumination with
And display light source, and have power saving and environmental protection concept concurrently, therefore it is called green illumination light source.
The technology of white light-emitting diode was suggested in generation nineteen ninety, and it is by blue light-emitting diode (blue
LED) excite by yttrium aluminium garnet fluorescent powder (Ce-doped YAG phosphor) the generation gold-tinted of doped with cerium, glimmering
The gold-tinted that light powder is sent produces white light with remaining blue light.But, yttrium aluminium garnet fluorescent powder uses
The problem having energy saturated (power saturation) in white light technology, i.e. after the luminance raising of excitation source,
Yttrium aluminium garnet fluorescent powder absorbs excitation source and sends the brightness of gold-tinted after the degree of arrival, can increase again
The brightness added just is restricted.
Therefore, after 2000, propose white based on yellow silicate fluorescent powder (silicate phosphor) and send out
Optical diode is as the another kind of selection of white light technology.Although silicate fluorescent powder does not has the problem that energy is saturated,
But but face the puzzlement of thermally-stabilised (heat stability), i.e. silicate fluorescent powder and be in luminous two for a long time
In the produced high thermal environment of pole pipe, its gold-tinted brightness can gradually decay (decay), causes the fall of white brightness
Low and the skew of colour temperature, and moisture-sensitive and decompose.Therefore develop a kind of new, the problems referred to above can be avoided
Fluorescent material forms, and is one important problem of current industrial circle.
Summary of the invention
The present invention provides a kind of fluorescent material composition and the white light emitting device using this fluorescent material to form, in order to solve
The most above-mentioned known problem also realizes high-quality white radiant.
The present invention provides a kind of white light emitting device, has emission wavelength range including one and contains 440-470nm
Light emitting diode and be arranged on this blue light-emitting diode fluorescent material composition, wherein this fluorescent material group
Becoming to include one first yellow fluorescent powder, peak luminous wavelength is 535-545nm；One second yellow fluorescent powder,
Peak luminous wavelength is 545-555nm；And a red fluorescence powder, peak luminous wavelength is 645-655nm,
Wherein the chromaticity coordinate scope of white light is CIE x:0.25-0.3 and CIE y:022-0.28.
In an embodiment of the present invention, this first yellow fluorescent powder, this second yellow fluorescent powder and this redness are glimmering
The percentage by weight of light powder is 1:1:0.3～0.45.
In an embodiment of the present invention, the ratio of this red fluorescence powder is 0.4.
In an embodiment of the present invention, this first yellow fluorescent powder includes lanthanum silicon-nitrogen compound.
In an embodiment of the present invention, this first yellow fluorescent powder includes La3Si6N11:Ce3+。
In an embodiment of the present invention, this second yellow fluorescent powder includes β-silicon aluminum oxygen nitrogen compound
(β-SiAlON)。
In an embodiment of the present invention, this second yellow fluorescent powder includes Si6-zAlzNzO8-z:Eu2+,0<z<4.2。
In an embodiment of the present invention, this red fluorescence powder includes calcium aluminum silicon-nitrogen compound.
In an embodiment of the present invention, this red fluorescence powder includes CaAlSiN3:Eu2+。
In an embodiment of the present invention, this light emitting diode has peak luminous wavelength 450-460nm.
The present invention provides a kind of white light emitting device, is arranged in this blue light including a blue light-emitting diode and one
Fluorescent material composition on light emitting diode, this fluorescent material composition includes a yellow lanthanum silicon-nitrogen compound, a yellow
β-silicon aluminum oxygen nitrogen compound and a red calcium aluminum silicon-nitrogen compound, wherein this yellow lanthanum silicon-nitrogen compound, this Huang
The percentage by weight of color β-silicon aluminum oxygen nitrogen compound and this redness calcium aluminum silicon-nitrogen compound is 1:1:0.3～0.45.
In an embodiment of the present invention, the ratio of this redness calcium aluminum silicon-nitrogen compound is 0.4.
In an embodiment of the present invention, this yellow lanthanum silicon-nitrogen compound includes La3Si6N11:Ce3+。
In an embodiment of the present invention, this yellow β-silicon aluminum oxygen nitrogen compound includes Si6-zAlzNzO8-z:Eu2+,
0<z<4.2。
In an embodiment of the present invention, this redness calcium aluminum silicon-nitrogen compound includes CaAlSiN3:Eu2+。
The present invention provides a kind of white light emitting device, is arranged in this blue light including a blue light-emitting diode and one
Fluorescent material composition on light emitting diode, this fluorescent material composition include one first nitrogen compound fluorescent material, one the
Nitride compound fluorescent material and one the 3rd nitrogen compound fluorescent material, wherein this second nitrogen compound fluorescent material send out
Optical wavelength peak value between this first nitrogen compound fluorescent material and the 3rd nitrogen compound emission wavelength peak value it
Between.
In an embodiment of the present invention, this first Nitride phosphor includes lanthanum silicon-nitrogen compound, this second nitrogen
Compound fluorescent material includes β-silicon aluminum oxygen nitrogen compound, and the 3rd nitrogen compound fluorescent material includes calcium aluminum silicon nitrification
Thing.
In an embodiment of the present invention, this second nitrogen compound fluorescent material includes Si6-zAlzNzO8-z:Eu2+,
0<z<4.2。
In an embodiment of the present invention, this first Nitride phosphor, this second Nitride phosphor and this
The percentage by weight of three nitrogen compound fluorescent material is 1:1:0.3～0.45.
In an embodiment of the present invention, the ratio of the 3rd nitrogen compound fluorescent material is 0.4.
The present invention provides a kind of fluorescent material composition, including one first fluorescent material, one second fluorescent material and one the 3rd
Fluorescent material, wherein this first fluorescent material includes a lanthanum silicon-nitrogen compound, and this second fluorescent material includes one β-sial
Oxynitrides, the 3rd fluorescent material includes a calcium aluminum silicon-nitrogen compound, and wherein this fluorescent material composition has
The blue light source of emission wavelength peak value 450-460nm excites down, and mixed light produces a white light, the NTSC of this white light
Color saturation is more than 70%.
In an embodiment of the present invention, this first fluorescent material includes La3Si6N11:Ce3+。
In an embodiment of the present invention, this first fluorescent material, the second fluorescent material and the 3rd fluorescent material weight
Percentage ratio is 1:1:0.3～0.45.
In an embodiment of the present invention, the ratio of the 3rd fluorescent material is 0.4.
In an embodiment of the present invention, this second fluorescent material includes Si6-zAlzNzO8-z:Eu2+,0<z<4.2。
In an embodiment of the present invention, the 3rd fluorescent material includes CaAlSiN3:Eu2+。
The white light emitting device of the present invention and the fluorescent material composition that used thereof are to thermally-stabilised and noenergy is saturated
And the problem decomposed of making moist, the fluorescent material composition disclosed by white light emitting device of the present invention can replace known yttrium
Aluminum stone gold-plating stone fluorescent material and silicate fluorescent powder, therefore for for lighting source and display light source, Ke Yiti
White light source for higher quality.
Accompanying drawing explanation
For the above-mentioned purpose of the present invention, feature and advantage can be become apparent, below in conjunction with accompanying drawing to this
Bright detailed description of the invention elaborates, wherein:
Fig. 1 illustrates the generalized section of the white light emitting device of one embodiment of the invention.
Fig. 2 illustrate respectively fluorescent material out of the ordinary in embodiment of the present invention fluorescent material composition luminescent spectrum curve chart
Fig. 3 illustrates the luminescent spectrum curve chart of white light emitting device according to an embodiment of the invention.
Fig. 4 illustrates the white light of white light emitting device according to embodiments of the present invention in cie color coordinate diagram
Coordinate range.
Main element symbol description:
100: white light emitting device
101: blue light-emitting diode
103: reflection housing
105: conducting bracket
107: bonding wire
109: adhesive layer
111: fluorescent material forms
Detailed description of the invention
Fig. 1 illustrates the generalized section of the white light emitting device of one embodiment of the invention.Refer to Fig. 1, in vain
Light light-emitting device 100 includes blue light-emitting diode 101, reflection housing 103 and a conducting bracket 105,
Within blue light-emitting diode 101 is arranged at reflection housing 103, and by bonding wire 107 and conducting bracket electricity
Property connect.One adhesive layer 109 is inserted in reflection housing 103 and encapsulates blue light-emitting diode 101, and one is glimmering
Light powder composition 111 is mixed in adhesive layer 109 and is positioned on blue light-emitting diode 101, and fluorescent material forms
111 include the first yellow fluorescent powder, the second yellow fluorescent powder and red fluorescence powder, in order to by blue light emitting two
A part for the blue light that wavelength that pole pipe 101 is sent is shorter is converted into the visible ray of longer wavelength, afterwards with
Remaining blue light and form white light.
In above-mentioned white light emitting device 100, for producing the white light of good chromaticity coordinate, fluorescent material is formed
The first yellow fluorescent powder, the second yellow fluorescent powder and red fluorescence powder in 111 mix in the proper ratio,
Fluorescent material composition 111 emission wavelength range (range of emission wavelength) about from 480nm to
730nm, is the gold-tinted of about 540nm, peak wavelength including peak wavelength (peak wavelength)
Gold-tinted and peak wavelength for about 550nm are the HONGGUANG of about 650nm, and blue light-emitting diode 101
Luminous wave-length coverage is about from 410nm to 480nm, and its peak wavelength is about 450nm-460nm.
Fluorescent material in the invention described above embodiment forms in 111, and the first yellow fluorescent powder includes doped with cerium
Lanthanum silicon-nitrogen compound, its peak luminous wavelength is about 540 ± 5nm, half-wave width (FWHM, full width at
Half maximum) it is 80-100nm, its molecular formula e.g. La3Si6N11:Ce3+, it is available from Mitsubishi Chemical
Company (MCC), model is BY201A.Second yellow fluorescent powder includes with the β-silicon aluminum oxygen nitrogen of europium activation
Compound (Eu-activated β-SiAlON), its peak luminous wavelength is about 550 ± 5nm, a width of 80-100 of half-wave
Nm, its molecular formula e.g. Si6-zAlzNzO8-z:Eu2+, 0 < z < 4.2, it is available from electrochemical (Denka
Chemicals), model is GR230LW.Red fluorescence powder includes with the calcium aluminum silicon-nitrogen compound of europium activation
(Eu-activated CaAlSiN), its peak luminous wavelength is about 650 ± 5nm, a width of 80-110nm of half-wave,
Its molecular formula e.g. CaAlSiN3:Eu2+, it being available from Mitsubishi Chemical Ind, model is BR101D.
Fig. 2 illustrate respectively fluorescent material out of the ordinary in embodiment of the present invention fluorescent material composition 111 luminescent spectrum bent
Line chart.Refer to Fig. 2, the first yellow fluorescent powder is La3Si6N11:Ce3+, under blue light excites, it is luminous
Peak wavelength is about 540nm；Second yellow fluorescent powder is Si6-zAlzNzO8-z:Eu2+,
0 < z < 4.2. (β-SiAlON), under blue light excites, its peak luminous wavelength is about 550nm；Red fluorescence powder
For CaAlSiN3:Eu2+, under blue light excites, its peak luminous wavelength is about 650nm.Reference Fig. 1,
In white light emitting device 100 of the present invention, the assorted fluorescent material shown in Fig. 2 can be mixed in the proper ratio
Close and form fluorescent material composition 111, and after mix with printing opacity sealing, insert formation sealing in reflection housing 103
Layer 109, whereby encapsulation blue light-emitting diode 101.
The luminescent spectrum curve of white light emitting device according to an embodiment of the invention is illustrated with reference to Fig. 3, Fig. 3
Figure.By the first yellow fluorescent powder " La depicted in Fig. 23Si6N11:Ce3+", the second yellow fluorescent powder
“Si6-zAlzNzO8-z:Eu2+, 0 < z < 4.2 " and red fluorescence powder " CaAlSiN3:Eu2+" mix according to a specific ratio
Close and obtain a fluorescent material composition, this luminescent powder composition is put on there is the indigo plant that peak wavelength is 450-460nm
On light-emitting diode, and obtain the luminescent spectrum curve of the white light emitting device such as Fig. 3 embodiment of the present invention
Figure, wherein in fluorescent material composition, the ratio of assorted fluorescent material is respectively the first yellow: the second yellow: red=1:
1:0.3～0.45 (w/w, weight ratio), and more preferably ratio is the first yellow: the second yellow: redness=1:1:
0.4(w/w)。
As it is shown on figure 3, the luminescent spectrum of the white light emitting device of the present embodiment has about 460nm and 545
The peak value of about nm, and whole luminescent spectrum is distributed in comparatively wide wave-length coverage (400nm-730nm)
In, the luminescent spectrum of the present embodiment shows the white mixed light with good colourity coordinate characteristic, and its NTSC
The demand of the LCD backlight such as TV or dynamic display can be particularly well suited for more than 72%.It addition, value
Obtain one to be mentioned that, in above-mentioned fluorescent material forms, add 5-15% (w/w) and size D50For 1-10 μm
Diffusant (diffuser), will can increase the luminosity of whole white light emitting device, above-mentioned diffusant example
As included zinc oxide (ZnO2), silicon oxide (SiO2), titanium oxide (TiO2), aluminium oxide (Al2O3) or a combination thereof.
Fig. 4 illustrates the white light of white light emitting device according to embodiments of the present invention in cie color coordinate diagram
Coordinate range.With reference to Fig. 4, by the first yellow fluorescent powder changed in the invention described above fluorescent material composition,
Second yellow fluorescent powder and the mixed proportion of red fluorescence powder, can obtain in chromaticity coordinate in the range from
CIE x:0.25-0.3 and the white light of CIE y:022-0.28, adjust white-light emitting dress by visual actual demand
The luminous characteristic put, it is achieved the white light of high-quality, therefore it is particularly suitable for the backlight such as TV or dynamic display
Demand.
Furthermore, in embodiment of the present invention fluorescent material forms, lanthanum silicon nitride fluorescent material (yellow) contained therein,
β-silicon aluminum oxygen nitrogen compound fluorescent material (yellow) and calcium aluminum silicon-nitrogen compound (red) are the most steady for the reaction of heat
Fixed, even if being in for a long time in high thermal environment produced by illuminating source, asking of brightness decay can't occur
Topic, is not easy to decompose because making moist, or the problem saturated just like known yttrium aluminium garnet fluorescent powder energy.
It is noted that for increasing the light emitting diode 101 launching efficiency for fluorescent material composition 111,
Fluorescent material composition 111 concentration can also by adhesive layer 109 surface gradually to light emitting diode 101 surface by
Cumulative add, or, can be covered on light emitting diode 101 by conformal fluorescent material composition 111 simultaneously,
And conformal fluorescent material composition 111 can by spraying, mold, the mode such as printing formed.Meanwhile, fluorescence
Powder composition 111 is not limited to need to directly be covered on light emitting diode 101, and fluorescent material composition 111 also can be borrowed
Excited by light emitting diode 101 by the mode away from light emitting diode 101, such as in display or in
In lighting module, fluorescent material composition 111 can form fluorescent material template or a light guide plate with mixed with resin,
Or the top of resin template or light guide plate can be coated, the most also can promote the light uniformity, increase glimmering
Light powder composition 111 is for the toleration of high temperature produced by light emitting diode 101.
In sum, the fluorescent material composition that the white light emitting device of the present invention is used does not has known fluorescent material heat
The problem that instability, moisture-sensitive and energy are saturated, it addition, by suitably changing the invention described above fluorescent material group
The ratio of each fluorescent material in one-tenth, is dynamically adapted the spectrum kenel (spectrum of the white light emitting device of the present invention
Pattern) to meet the demand of reality, the fluorescent material composition disclosed by white light emitting device the most of the present invention is permissible
Effectively replace existing yttrium aluminium garnet fluorescent powder or silicate fluorescent powder, therefore for supplying lighting source and showing
Show device light source, it is provided that the white light source of higher quality.
Although the present invention discloses as above with preferred embodiment, so it is not limited to the present invention, Ren Heben
Skilled person, without departing from the spirit and scope of the present invention, when making a little amendment and perfect,
Therefore protection scope of the present invention is when with being as the criterion that claims are defined.
Claims (19)
1. a white light emitting device, including:
One blue light-emitting diode, has emission wavelength range and contains 440-470nm；And
One fluorescent material composition, is arranged on this blue light-emitting diode, and this fluorescent material composition includes:
One first yellow fluorescent powder, peak luminous wavelength is 535-545nm；
One second yellow fluorescent powder, peak luminous wavelength is 545-555nm；And
One red fluorescence powder, peak luminous wavelength is 645-655nm,
Wherein the concentration of fluorescent material composition is increased and this white light to blue light-emitting diode surface by adhesive layer
NTSC color saturation is more than 70%.
2. white light emitting device as claimed in claim 1, it is characterised in that the wherein chromaticity coordinate of white light
Scope is CIE x < 0.3 and CIE y < 0.28.
3. white light emitting device as claimed in claim 1, it is characterised in that the wherein chromaticity coordinate of white light
Scope is CIE x:0.25-0.3 and CIE y:022-0.28.
4. white light emitting device as claimed in claim 1, it is characterised in that this first yellow fluorescent powder bag
Include lanthanum silicon-nitrogen compound.
5. white light emitting device as claimed in claim 4, it is characterised in that this first yellow fluorescent powder bag
Include La3Si6N11:Ce3+。
6. white light emitting device as claimed in claim 1, it is characterised in that this second yellow fluorescent powder bag
Include β-silicon aluminum oxygen nitrogen compound.
7. white light emitting device as claimed in claim 6, it is characterised in that this second yellow fluorescent powder bag
Include Si6-zAlzNzO8-z:Eu2+,0<z<4.2。
8. white light emitting device as claimed in claim 1, it is characterised in that this red fluorescence powder includes calcium
Aluminum silicon-nitrogen compound.
9. white light emitting device as claimed in claim 8, it is characterised in that this red fluorescence powder includes
CaAlSiN3:Eu2+。
10. a white light emitting device, including:
One blue light-emitting diode, has emission wavelength range and contains 440-470nm；And
One fluorescent material composition, is arranged on this blue light-emitting diode, and this fluorescent material composition includes:
One first fluorescent material, has one first emission wavelength peak value；
One second fluorescent material, has one second emission wavelength peak value；
One second fluorescent material, has one the 3rd emission wavelength peak value；And
Wherein the two the second emission wavelength peak values are between the first emission wavelength peak value and the 3rd emission wavelength peak value
Between, and the light emitting region of this fluorescent material composition is from 480nm to 730nm, wherein fluorescent material composition is dense
Spend and increased to blue light-emitting diode surface by adhesive layer.
11. white light emitting devices as claimed in claim 10, it is characterised in that wherein the colourity of white light is sat
Mark scope is CIE x:0.25-0.3 and CIE y:022-0.28.
12. white light emitting devices as claimed in claim 10, it is characterised in that this first fluorescent material,
Two fluorescent material and the 3rd fluorescent material at least include a kind of Nitride phosphor.
13. white light emitting devices as claimed in claim 10, it is characterised in that this first fluorescent material,
Two fluorescent material and the 3rd fluorescent material are all Nitride phosphor.
14. white light emitting devices as claimed in claim 13, it is characterised in that this first fluorescent material includes
La3Si6N11:Ce3+。
15. white light emitting devices as claimed in claim 13, it is characterised in that the ratio of the 3rd fluorescent material
Value is 0.4.
16. white light emitting devices as claimed in claim 13, it is characterised in that this second fluorescent material includes
Si6-zAlzNzO8-z:Eu2+,0<z<4.2。
17. white light emitting devices as claimed in claim 13, it is characterised in that the 3rd fluorescent material includes
CaAlSiN3:Eu2+。
18. white light emitting devices as claimed in claim 10, it is characterised in that wherein this first fluorescent material,
Second fluorescent material and the 3rd fluorescent material percentage by weight be 1:1:0.3～0.45.
19. white light emitting devices as claimed in claim 10, it is characterised in that the NTSC color of this white light
Color saturation is more than 70%.
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| CN201610316702.XA CN105932141A (en) | 2011-08-02 | 2011-08-02 | Fluorescent powder component and white light-emitting device employing same |
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| CN201610316702.XA CN105932141A (en) | 2011-08-02 | 2011-08-02 | Fluorescent powder component and white light-emitting device employing same |
| CN201110218861.3A CN102916113B (en) | 2011-08-02 | 2011-08-02 | The white luminous device that fluorescent material forms and uses this fluorescent material to form |
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| CN103980891A (en) * | 2013-02-07 | 2014-08-13 | 亿光电子工业股份有限公司 | Phosphor composition and light emitting diode element |
| CN105892145B (en) * | 2016-04-05 | 2020-07-03 | 武汉华星光电技术有限公司 | Display and display module thereof |
| JP6718991B2 (en) * | 2016-06-30 | 2020-07-08 | 有研稀土新材料股▲フン▼有限公司 | Lutetium nitride fluorescent powder and light emitting device having the fluorescent powder |
| CN109285937B (en) * | 2018-08-16 | 2020-03-20 | 佛山市国星光电股份有限公司 | LED white light device, preparation method thereof and LED backlight module |
| CN115513358B (en) * | 2022-11-21 | 2023-06-23 | 四川世纪和光科技发展有限公司 | Fluorescent composition, fluorescent film and light source |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060208262A1 (en) * | 2005-03-18 | 2006-09-21 | Fujikura Ltd., Independent Administrative Institution | Light emitting device and illumination apparatus |
| US20070252513A1 (en) * | 2004-07-05 | 2007-11-01 | Koninklijke Philips Electronics, N.V. | Illumination System Comprising a Radiation Source and a Fluorescent Material |
| WO2008043519A1 (en) * | 2006-10-10 | 2008-04-17 | Lexedis Lighting Gmbh | Phosphor-converted light emitting diode |
| US20110031874A1 (en) * | 2008-01-21 | 2011-02-10 | Nichia Corporation | Light emitting apparatus |
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| JP4072632B2 (en) * | 2002-11-29 | 2008-04-09 | 豊田合成株式会社 | Light emitting device and light emitting method |
| JPWO2009028657A1 (en) * | 2007-08-30 | 2010-12-02 | 日亜化学工業株式会社 | Light emitting device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070252513A1 (en) * | 2004-07-05 | 2007-11-01 | Koninklijke Philips Electronics, N.V. | Illumination System Comprising a Radiation Source and a Fluorescent Material |
| US20060208262A1 (en) * | 2005-03-18 | 2006-09-21 | Fujikura Ltd., Independent Administrative Institution | Light emitting device and illumination apparatus |
| WO2008043519A1 (en) * | 2006-10-10 | 2008-04-17 | Lexedis Lighting Gmbh | Phosphor-converted light emitting diode |
| US20110031874A1 (en) * | 2008-01-21 | 2011-02-10 | Nichia Corporation | Light emitting apparatus |
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| CN102916113A (en) | 2013-02-06 |
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