CN105932068A - Thin film transistor, display panel and display device - Google Patents
Thin film transistor, display panel and display device Download PDFInfo
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- CN105932068A CN105932068A CN201610507318.8A CN201610507318A CN105932068A CN 105932068 A CN105932068 A CN 105932068A CN 201610507318 A CN201610507318 A CN 201610507318A CN 105932068 A CN105932068 A CN 105932068A
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- 239000010409 thin film Substances 0.000 title claims abstract description 146
- 239000000758 substrate Substances 0.000 claims abstract description 49
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 6
- 238000009413 insulation Methods 0.000 claims description 4
- 229920005591 polysilicon Polymers 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 208000034699 Vitreous floaters Diseases 0.000 claims 2
- 238000005286 illumination Methods 0.000 description 13
- 238000000034 method Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- 239000010408 film Substances 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000005611 electricity Effects 0.000 description 2
- 230000003447 ipsilateral effect Effects 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001579 optical reflectometry Methods 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/7866—Non-monocrystalline silicon transistors
- H01L29/78672—Polycrystalline or microcrystalline silicon transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/7866—Non-monocrystalline silicon transistors
- H01L29/78672—Polycrystalline or microcrystalline silicon transistor
- H01L29/78675—Polycrystalline or microcrystalline silicon transistor with normal-type structure, e.g. with top gate
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Health & Medical Sciences (AREA)
- Electromagnetism (AREA)
- Toxicology (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
Abstract
Embodiments of the invention disclose a thin film transistor, a display panel and a display device. The thin film transistor comprises a substrate, a light shield layer, an active layer, a source electrode and a drain electrode, wherein the light shield layer is arranged on the substrate; the active layer is arranged at one side of the light shield layer, which departs from the substrate, and is insulated with the light shield layer, and the active layer comprises a channel region; the current of the thin film transistor is transmitted between the source electrode and the drain electrode, a current direction of the thin film transistor is a first direction, and a second direction is vertical to the first direction; a distance between the edge of any side of the light shield layer and the edge of the channel region at the same side is greater than or equal to a first preset distance in the first direction; and a distance between the edge of any side of the light shield layer and the edge of the channel region at the same side is greater than or equal to a second preset distance in the second direction. According to the thin film transistor, the display panel and the display device, the leakage current of the thin film transistor, which is caused by the reflected light, is effectively reduced, so that the power consumption of the display panel based on the thin film transistor is reduced, and the low-frequency drive of the display panel and the display device is realized.
Description
Technical field
The present embodiments relate to display floater technology, particularly relate to a kind of thin film transistor (TFT) and to comprise this thin
The display floater of film transistor and display device.
Background technology
Along with the whole world low-carbon (LC) life requirement get more and more, people require the power consumption of existing electronic equipment the lowest more
Good, and electronic equipment also needs to ensure excellent flying power, it can thus be appreciated that each portion in electronic equipment
The power consumption of part all should reduce to ensure that overall power consumption is low accordingly.For the electronic equipment such as mobile phone, panel computer,
It is also the lowest more good to the power consumption requirements of display screen.
The power consumption of display screen shows that with it driving frequency is proportional, existing display screen many employings about 60Hz
Display driving frequency, causes power consumption high.
Existing display screen based on LTPS (low temperature poly-silicon, LTPS), LTPS shows
The leakage current of screen is relatively large, and when light is irradiated to the channel region of transistor, can produce photoproduction current-carrying
Son so that leakage current increases further.
To sum up, the leakage current of existing LTPS display screen is big and display driving frequency is high, causes power consumption big,
Low frequency driving cannot be realized.
Summary of the invention
The embodiment of the present invention provides a kind of thin film transistor (TFT), display floater and display device, to solve existing base
Relatively big in the display floater leakage current of LTPS thin film transistor (TFT), power consumption is big, it is impossible to realize asking of low frequency driving
Topic.
The one side of the embodiment of the present invention provides a kind of thin film transistor (TFT), and this thin film transistor (TFT) includes:
Underlay substrate；
It is positioned at the light shield layer on described underlay substrate；
Be positioned at described light shield layer deviate from described underlay substrate side and with described light shield layer insulation arrange active
Layer, described active layer includes channel region；
Described thin film transistor (TFT) also includes: source electrode and drain electrode, and the electric current of described thin film transistor (TFT) is at described source electrode
And transmitting between described drain electrode, wherein, the sense of current of described thin film transistor (TFT) is first direction, second party
To being perpendicular to described first direction；
In said first direction, the limit of the described channel region of the either side edge of described light shield layer and the same side
Distance between edge is more than or equal to the first predeterminable range；In this second direction, described light shield layer
Distance between the edge of the described channel region of either side edge and the same side more than or equal to second preset away from
From.
The another aspect of the embodiment of the present invention additionally provides a kind of display floater, and this display floater includes above-mentioned
Thin film transistor (TFT).
The another aspect of the embodiment of the present invention additionally provides a kind of display device, and this display device includes above-mentioned
Display floater.
Thin film transistor (TFT), display floater and display device in the embodiment of the present invention, wherein, thin film transistor (TFT)
On the first direction of electric current transmission, between the edge of the either side edge of light shield layer and the channel region of the same side
Distance more than or equal to the first predeterminable range, in the second direction being perpendicular to the sense of current, light shield layer
Either side edge and the same side channel region edge between distance more than or equal to second preset away from
From.In the embodiment of the present invention, the either side edge of light shield layer is beyond the edge of channel region so that from light shield layer side
The edge away from channel region of the light within thin film transistor (TFT) is injected at edge, anti-produced by this light accordingly
Penetrate light and be not easily accessed channel region, it is to avoid light irradiates channel region and produces photo-generated carrier, effectively reduces
The leakage current that reflection light causes；Compared with prior art, the embodiment of the present invention effectively reduces film crystal
Pipe is by reflecting the leakage current that light causes so that the leakage current of thin film transistor (TFT) reduces, such that it is able to reduce based on
The power consumption of the display floater of above-mentioned thin film transistor (TFT), it is achieved display floater and the low frequency driving of display device.
Accompanying drawing explanation
For the technical scheme being illustrated more clearly that in the embodiment of the present invention, institute in embodiment being described below
Need the accompanying drawing used to do one to introduce simply, it should be apparent that, the accompanying drawing in describing below is the present invention
Some embodiments, for those of ordinary skill in the art, on the premise of not paying creative work,
Other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 is the top view of a kind of thin film transistor (TFT) that the embodiment of the present invention provides；
Fig. 2 is the Fig. 1 sectional view along A-A'；
Fig. 3 is the Fig. 1 sectional view along B-B'；
Fig. 4 is the schematic diagram of another thin film transistor (TFT) that the embodiment of the present invention provides；
Fig. 5 A is the schematic diagram of the another kind of thin film transistor (TFT) that the embodiment of the present invention provides；
Fig. 5 B is the schematic diagram of another thin film transistor (TFT) that the embodiment of the present invention provides；
Fig. 6 is the schematic diagram of a kind of display device that the embodiment of the present invention provides.
Detailed description of the invention
For making the object, technical solutions and advantages of the present invention clearer, hereinafter with reference to the embodiment of the present invention
In accompanying drawing, technical scheme is clearly and completely described, it is clear that described by embodiment
Embodiment be a part of embodiment of the present invention rather than whole embodiments.Based on the enforcement in the present invention
Example, the every other enforcement that those of ordinary skill in the art are obtained under not making creative work premise
Example, broadly falls into the scope of protection of the invention.
As it is shown in figure 1, the top view of a kind of thin film transistor (TFT) provided for the embodiment of the present invention, Fig. 2 is figure
1 along the sectional view of A-A', and Fig. 3 is the Fig. 1 sectional view along B-B'.The thin film transistor (TFT) that the present embodiment provides
Specifically include: underlay substrate 101；The light shield layer 102 being positioned on underlay substrate 101；It is positioned at light shield layer 102
Away from substrate substrate 101 side and the active layer 103 arranged with light shield layer 102 insulation, active layer 103 wraps
Include channel region 103a；Thin film transistor (TFT) also includes source electrode 104 and drain electrode 105, and the electric current of thin film transistor (TFT) exists
Transmitting between source electrode 104 and drain electrode 105, wherein, the sense of current of thin film transistor (TFT) is first direction, the
Two directions are perpendicular to first direction；In a first direction, the either side edge of light shield layer 102 and the same side
Distance between the edge of channel region 103a is more than or equal to the first predeterminable range M；In a second direction,
Distance between the edge of the either side edge of light shield layer 102 and the channel region 103a of the same side more than or etc.
In the second predeterminable range K.
The most optional underlay substrate 101 is glass substrate, the most optional substrate
Substrate is other materials, does not specifically limit underlay substrate, and any one can be used in
The underlay substrate of thin film transistor (TFT) each falls within protection scope of the present invention.Light shield layer 102 in the present embodiment
On underlay substrate 101, the material of optional light shield layer 102 is metal, its function be to shut out the light in case
Only light enters channel region 103a, but does not specifically limit the material of light shield layer, arbitrarily
A kind of light screening material that can be used in thin film transistor (TFT) each falls within protection scope of the present invention.
Active layer 103 is positioned at light shield layer 102 away from substrate substrate 101 side and and shading in the present embodiment
Layer 102 insulation is arranged, and active layer 103 includes that channel region 103a, the two ends of active layer 103 are source-drain region.
This thin film transistor (TFT) also includes source electrode 104 and drain electrode 105, concrete, source electrode 104 and a source-drain region electricity
Connect, and drain electrode 105 electrically connects with another source-drain region.The electric current of thin film transistor (TFT) source electrode 104 with
Transmit between drain electrode 105, i.e. the electric current of thin film transistor (TFT) transmits through conducting channel district 103a from source electrode 104
To drain electrode 105, or, the electric current of thin film transistor (TFT) from drain electrode 105 through conducting channel district 103a transmission to
Source electrode 104.The sense of current defining thin film transistor (TFT) in the present embodiment is first direction, i.e. A-A' direction
Parallel with the sense of current, the direction being perpendicular to the sense of current is second direction, i.e. B-B' direction and second direction
Parallel, first direction is vertical with second direction.
It should be noted that it is said that in general, display floater includes multi-strip scanning line and vertical with scan line
A plurality of data lines, scan line arranged in a crossed manner and data wire limit multiple pixel cells, and pixel cell includes
Pixel electrode and the thin film transistor (TFT) electrically connected with pixel electrode, the optional application of thin film transistor (TFT) of the present embodiment
In above-mentioned display floater, but the most described thin film transistor (TFT) is not limited to apply at above-mentioned display floater
In.Concrete, the drain electrode of thin film transistor (TFT) electrically connects with pixel electrode, the source electrode of thin film transistor (TFT) and data
Line electrically connects；Or, the source electrode of thin film transistor (TFT) electrically connects with pixel electrode, the drain electrode of thin film transistor (TFT) with
Data wire electrically connects.As shown in FIG. 1 to 3, data wire 210 is electrically connected with the source electrode 104 of this thin film transistor (TFT)
Connecing, thin film transistor (TFT) also includes that grid 220, grid 220 electrically connect with scan line.
It is it should be noted that the source electrode of thin film transistor (TFT) and the definition of drain electrode, different because the flowing of electric current is different,
Here being referred to as source electrode be connected with data wire, be connected with pixel electrode is referred to as drain electrode.But this not structure
Becoming limitation of the present invention, be referred to as drain electrode by be connected with data wire, be connected with pixel electrode is referred to as source electrode
The most within the scope of the present invention.
As in figure 2 it is shown, in a first direction, the either side edge of light shield layer 102 and the channel region of the same side
Distance between the edge of 103a be more than or equal to the first predeterminable range M, it is clear that M > 0.Work as light
Line by underlay substrate 101 enter thin film transistor (TFT) time, a part of light directly penetrate light shield layer 102 towards
Underlay substrate 101 side, some light is injected in thin film transistor (TFT) from the lateral edges of light shield layer 102
Portion.Directly penetrate light shield layer 102 towards the light of underlay substrate 101 side be blocked layer 102 block and not
Channel region 103a can be entered, the most also will not be irradiated channel region 103a by light so that channel region 103a light
The density of raw carrier increases and causes leakage current.Inject in thin film transistor (TFT) from the lateral edges of light shield layer 102
The light in portion can be penetrated at source electrode 104 (be chosen as in other embodiments draining 105) towards underlay substrate 101
Side, then light may produce reflection on the source electrode 104 of nontransparent conductive material, due to light shield layer 102
Either side edge beyond the ipsilateral penumbra of channel region 103a, and there is certain distance, be therefore incident on source electrode
Light on 104 is away from channel region 103a, and the reflection light after light shield layer 102 reflects is the most accordingly
Easily inject in channel region 103a, thus effectively reduce the leakage current caused by reflection light.
As it is shown on figure 3, in a second direction, the either side edge of light shield layer 102 and the channel region of the same side
Distance between the edge of 103a be more than or equal to the second predeterminable range K, it is clear that K > 0.Work as light
Line by underlay substrate 101 enter thin film transistor (TFT) time, a part of light directly penetrate light shield layer 102 towards
The side of underlay substrate 101, some light injects thin film transistor (TFT) from the lateral edges of light shield layer 102
Internal.Directly penetrate light shield layer 102 towards the light of underlay substrate 101 side be blocked layer 102 block and
Channel region 103a will not be entered, the most also will not be caused leakage current by illumination.Side from light shield layer 102
Edge is injected the light within thin film transistor (TFT) and can be penetrated at grid 220 towards the side of underlay substrate 101, then light
Line may produce reflection on grid 220, owing to the either side edge of light shield layer 102 is beyond channel region 103a
Ipsilateral penumbra, the light being therefore incident on grid 220 away from channel region 103a, corresponding produce anti-
Penetrate light to be also not easy to inject in channel region 103a, thus effectively reduce the leakage current caused by reflection light.
The thin film transistor (TFT) that the present embodiment provides, on the first direction of electric current transmission, the either side of light shield layer
Distance between the edge of the channel region of edge and the same side is more than or equal to the first predeterminable range, vertically
In the second direction of the sense of current, between the edge of the either side edge of light shield layer and the channel region of the same side
Distance more than or equal to the second predeterminable range.In the present embodiment, the either side edge of light shield layer exceeds raceway groove
The edge in district so that inject the edge away from channel region of the light within thin film transistor (TFT) from light shield layer lateral edges,
This light corresponding produced reflection light is not easily accessed channel region, effectively reduces the leakage that reflection light causes
Electric current, compared with prior art, effectively reduces thin film transistor (TFT) by reflecting the leakage that light causes in the present embodiment
Electric current so that the leakage current of thin film transistor (TFT) reduces, such that it is able to reduce based on above-mentioned thin film transistor (TFT) aobvious
Show the power consumption of panel, it is achieved the low frequency driving of display floater.
Exemplary, on the basis of technique scheme, it should be noted that as shown in Figure 2, thin
Film transistor also includes: in a first direction, and be positioned at channel region 103a both sides is lightly doped district 103b, and
It is positioned at and district 103b is respectively lightly doped deviates from the heavily doped region 103c of channel region 103a side, wherein, district is lightly doped
The size N scope of 103b is 0.5 μm～2.5 μm.The setting that district 103b is lightly doped can effectively prevent short ditch
Channel effect, additionally it is possible to effectively reduce the channel leakage stream effect between source electrode 104 and drain electrode 105, this area
Those of skill will appreciate that to arrange in thin film transistor (TFT) and district and the technique of heavily doped region and function are lightly doped,
This repeats no more.The most optional size N scope that district 103b is lightly doped is 0.5 μm～2.5 μm,
It will be understood by those skilled in the art that the thin film transistor (TFT) based on different structure and application, thin film transistor (TFT) is light
The size of doped region may be different, and the size that thin film transistor (TFT) is not lightly doped district has
Body limits.
Exemplary, in the present embodiment, optional in a first direction, light shield layer 102 is being perpendicular to substrate base
Projection on plate 101 direction covers and district 103b is lightly doped in the projection being perpendicular on underlay substrate 101 direction.
The most in a first direction, the either side edge of light shield layer 102 is not only beyond the raceway groove of the same side
The edge of district 103a, but also beyond the edge that district 103b is lightly doped of the same side, then from light shield layer 102
Lateral edges inject light within thin film transistor (TFT) and away from channel region 103a and district 103b be lightly doped, accordingly
The reflection light produced is not easy to inject in channel region 103a.The setting of light shield layer 102 can effectively reduce photograph
Be mapped to the reflection light of channel region 103a, and then reduce the leakage current of thin film transistor (TFT), such that it is able to reduce based on
The power consumption of the display floater of above-mentioned thin film transistor (TFT), it is achieved the low frequency driving of display floater.
In other embodiments, optionally, as shown in Figure 4, in a first direction, light shield layer 102 is hanging down
Straight projection covering on underlay substrate 101 direction is lightly doped district 103b and is being perpendicular to underlay substrate 101 direction
On projection, and the imbricate that district 103b is lightly doped of the either side edge of light shield layer 102 and the same side.
Thus the lateral edges from light shield layer 102 injects the light within thin film transistor (TFT) away from channel region 103a, accordingly
The reflection light of generation be not easy to inject in channel region 103a.The setting of light shield layer 102 can effectively reduce
It is irradiated to the reflection light of channel region 103a, and then the leakage current of reduction thin film transistor (TFT), such that it is able to reduce base
Power consumption in the display floater of above-mentioned thin film transistor (TFT), it is achieved the low frequency driving of display floater.
Exemplary, in the present embodiment, it should be noted that thin film transistor (TFT) also includes: grid 220,
The grid 220 projection on the direction being perpendicular to underlay substrate 101 covers channel region 103a and is being perpendicular to substrate
Projection on the direction of substrate 101.Grid 220 is being perpendicular to the side of underlay substrate 101 in a first direction
Projection upwards is equal to channel region 103a projection on the direction being perpendicular to underlay substrate 101.Concrete,
In the second direction being perpendicular to the sense of current of thin film transistor (TFT), grid 220 is being perpendicular to underlay substrate 101
Direction on projection cover channel region 103a projection；In a first direction, grid 220 is being perpendicular to lining
Projection on the direction of substrate 101 is overlapping with the projection of channel region 103a.Grid is not entered
Row is concrete to be limited.
Exemplary, on the basis of technique scheme, the most optional thin film transistor (TFT) is top
Grid structure, in top gate structure, grid is positioned at the side of active layer away from substrate substrate, and grid can be coated with
The channel region of active layer, it is to avoid channel region is irradiated by extraneous light, produces extra leakage current.But ability
Field technique personnel, it is understood that this is only an example, are not intended that limitation of the present invention, the present invention
It is equally applicable to the thin-film transistor structure of bottom gate mode.
Exemplary, on the basis of technique scheme, the most optional thin film transistor (TFT) is double
Grid structure, specially L-type double-gate structure.Show it is understood by one of ordinary skill in the art that this is only one
Example, is not intended that limitation of the present invention, present disclosure applies equally to the thin film transistor (TFT) of single grid structure, with
And two kinds of U-shaped double-gate structures shown in the thin film transistor (TFT) of other grid structures, such as Fig. 5 A and Fig. 5 B are thin
Film transistor, is spaced two channel regions so that electricity between its source electrode of the thin film transistor (TFT) of double-gate structure and drain electrode
Resistance increases, and leakage current reduces further, is advantageously implemented the low of display floater based on above-mentioned thin film transistor (TFT)
Frequency drives.
Exemplary, on the basis of technique scheme, the most optional thin film transistor (TFT) is low
Temperature polycrystalline SiTFT, active layer 103 is low-temperature polysilicon silicon active layer.Affect low-temperature polysilicon film
The illumination of transistor includes transmission light, scattered light and reflection light etc., in order to drop low light reflectivity further to thin film
The impact of transistor drain current, arranges the either side edge of light shield layer 102 beyond the same side in the present embodiment
The edge of channel region 103a, thus reduce the leakage current of low-temperature polysilicon film transistor, base can be reduced
Power consumption in the display floater of above-mentioned thin film transistor (TFT), it is achieved the low frequency driving of display floater.
Exemplary, the most optional first predeterminable range M is in the range of 2.5 μm～6 μm.This reality
Execute that the thin film transistor (TFT) shown in example is optional to be applied in display floater, high pixel based on display floater, thin film
The size of transistor is less, size based on thin film transistor (TFT) and the size of light shield layer 102 in the present embodiment,
Optional first predeterminable range M is in the range of more than or equal to 2.5 μm and less than or equal to 6 μm.This area skill
Art personnel are appreciated that the first predeterminable range includes but not limited to above restriction, based on thin film transistor (TFT) not
With structure and application, designer can the most rationally arrange thin film transistor (TFT) according to required thin film transistor (TFT)
First predeterminable range, the most specifically limits the first predeterminable range in the present invention.
First predeterminable range M is in the range of 2.5 μm～6 μm in the present embodiment, and district 103b is lightly doped
Size N scope be 0.5 μm～2.5 μm, then the light shield layer 102 of thin film transistor (TFT) in a first direction appoint
One lateral edges exceeds or the edge that district 103b is lightly doped of overlapping the same side, it is possible to effectively reduce what illumination caused
Leakage current, thus realize the low frequency driving of display floater based on above-mentioned thin film transistor (TFT) and reduce power consumption.Show
Example, on the basis of technique scheme, the most preferably first predeterminable range M is 3 μm.
Exemplary, optional second predeterminable range K is in the range of 2 μm～6 μm.Thin film shown in the present embodiment
Transistor is optional to be applied in display floater, and high pixel based on display floater, the size of thin film transistor (TFT) is relatively
Little, size based on thin film transistor (TFT) and the size of light shield layer 102 in the present embodiment, optional second preset away from
From K in the range of more than or equal to 2 μm and less than or equal to 6 μm.It will be understood by those skilled in the art that
Second predeterminable range includes but not limited to above restriction, different structure based on thin film transistor (TFT) and application, if
Meter personnel according to required thin film transistor (TFT), can the most rationally arrange the second predeterminable range of thin film transistor (TFT),
Second predeterminable range is the most specifically limited by the present invention.The most preferably second predeterminable range K
Being 3 μm, the light shield layer 102 of thin film transistor (TFT) either side edge in a second direction exceeds channel region 103a
Edge, the same side, the power consumption of display floater based on above-mentioned thin film transistor (TFT) can be reduced, it is achieved display surface
The low frequency driving of plate.
It should be noted that the first predeterminable range M is in the range of 2.5 μm～6 μm, shading in a first direction
Layer 102 both sides the first predeterminable range M can equal can also be unequal.And the second predeterminable range K
Scope is 2 μm～6 μm, in a second direction the second predeterminable range K of light shield layer 102 both sides can equal also
Can be unequal.
On the other hand the embodiment of the present invention also provides for a kind of display floater, and this display floater includes as above
Thin film transistor (TFT), above-mentioned thin film transistor (TFT) for controlling being turned on and off of pixel cell in display floater, from
And determine whether pixel cell has voltage supply, realize deflection for liquid crystal molecule corresponding to pixel cell, obtain
Display effect needed for.It addition, the display floater that the present embodiment is provided, can be display panels,
Can also be organic electroluminescence display panel, it is also possible to for other kinds of display floater, the present embodiment is to this not
Make particular determination.
In the present embodiment as a example by the display floater of 5.3FHD, setting capacitance C as 8*e^-14, this shows
The driving voltage showing panel is 4V.Concrete, the relevant parameter of a kind of display floater that the present embodiment provides is such as
Shown in table 1 below～table 3.
Table 1
| f | I | t | Q' | U | C | Q | Ut | ΔU | Conservation rate |
| 60Hz | 1.00E-13 | 0.016657986 | 1.67E-15 | 4 | 8.00E-14 | 3.20E-13 | 3.98E+00 | 0.021 | 99.48% |
| 30Hz | 1.00E-13 | 0.033324653 | 3.33E-15 | 4 | 8.00E-14 | 3.20E-13 | 3.96E+00 | 0.042 | 98.96% |
| 15Hz | 1.00E-13 | 0.066657986 | 6.67E-15 | 4 | 8.00E-14 | 3.20E-13 | 3.92E+00 | 0.083 | 97.92% |
| 5Hz | 1.00E-13 | 0.199991319 | 2.00E-14 | 4 | 8.00E-14 | 3.20E-13 | 3.75E+00 | 0.250 | 93.75% |
Table 2
| f | I | t | Q' | U | C | Q | Ut | ΔU | Conservation rate |
| 60Hz | 5.00E-13 | 0.016657986 | 8.33E-15 | 4 | 8.00E-14 | 3.20E-13 | 3.90E+00 | 0.104 | 97.40% |
| 30Hz | 5.00E-13 | 0.033324653 | 1.67E-14 | 4 | 8.00E-14 | 3.20E-13 | 3.79E+00 | 0.208 | 94.79% |
| 15Hz | 5.00E-13 | 0.066657986 | 3.33E-14 | 4 | 8.00E-14 | 3.20E-13 | 3.58E+00 | 0.417 | 89.58% |
| 5Hz | 5.00E-13 | 0.199991319 | 1.00E-13 | 4 | 8.00E-14 | 3.20E-13 | 2.75E+00 | 1.250 | 68.75% |
Table 3
| f | I | t | Q' | U | C | Q | Ut | ΔU | Conservation rate |
| 60Hz | 1.00E-12 | 0.016657986 | 1.67E-14 | 4 | 8.00E-14 | 3.20E-13 | 3.79E+00 | 0.208 | 94.79% |
| 30Hz | 1.00E-12 | 0.033324653 | 3.33E-14 | 4 | 8.00E-14 | 3.20E-13 | 3.58E+00 | 0.417 | 89.59% |
| 15Hz | 1.00E-12 | 0.066657986 | 6.67E-14 | 4 | 8.00E-14 | 3.20E-13 | 3.17E+00 | 0.833 | 79.17% |
| 5Hz | 1.00E-12 | 0.199991319 | 2.00E-13 | 4 | 8.00E-14 | 3.20E-13 | 1.50E+00 | 2.500 | 37.50% |
Wherein, f is display driving frequency, and I is leakage current, and t is time and t=(1/f)-(1/60/ scanning resolution),
Q' is loss of charge and Q'=It in the t time, and U is pixel initial potential and U=Q/C, and C is capacitance, Q
For initial charge amount, Ut is the pixel potential after the t time and Ut=(Q-Q')/C, and Δ U is pixel in the t time
The variable quantity of current potential and Δ U=U-Ut, conservation rate is the pixel voltage conservation rate of display floater.
From table 1～table 3, in order to realize low frequency driving, and occur without abnormal (the pixel voltage holding of display
Rate more than 95%), then need the leakage current of the thin film transistor (TFT) in display floater to be maintained at below 1*E13.This
Skilled person is appreciated that above-mentioned example and is expressed as the display floater of 5.3FHD, and other are different
The parameter of display floater may be different, the most do not carry out concrete example and restriction.
In the present embodiment in order to reduce the photogenerated leakage current caused by luminous reflectance of thin film transistor (TFT), optional
One predeterminable range M in the range of 2.5 μm～6 μm and the second predeterminable range K in the range of 2 μm～6 μm.
Device widths W=4 μm of optional thin film transistor (TFT) and device length L=3 μm at this, backlight illumination is
8000cd/m2, when the first predeterminable range M and the second predeterminable range K is different value, low temperature polycrystalline silicon is thin
The leakage current Id of film transistor is different.
Concrete, if the standoff voltage of above-mentioned thin film transistor (TFT) is-2V, research worker is drawn by repeatedly research,
During unglazed photograph, the leakage current of thin film transistor (TFT) is minimum；There is illumination without the leakage current of thin film transistor (TFT) during light shield layer
High and higher than 1*E-12；Order, have the thin film transistor (TFT) of illumination and M=K=0, have illumination and M=1 and
The thin film transistor (TFT) of K=0, has the thin film transistor (TFT) of illumination and M=0 and K=1, has illumination and M=K=1
Thin film transistor (TFT), has the thin film transistor (TFT) of illumination and M=K=2, has the thin film transistor (TFT) of illumination and M=K=3,
There is the thin film transistor (TFT) of illumination and M=K=4, have the thin film transistor (TFT) of illumination and M=5 and K=4, its electric leakage
Stream order reduces；And when M >=3 of thin film transistor (TFT) and K >=3, leakage current is less than 1*E-13.
To sum up, the first predeterminable range M of the thin film transistor (TFT) in this display floater is preferably greater than or equal to 3 μm
And second predeterminable range K be preferably greater than or equal to 3 μm.
The another aspect of the embodiment of the present invention also provides for a kind of display device, including above-mentioned display floater.
It is the schematic diagram of a kind of display device that the embodiment of the present invention provides with reference to Fig. 6, Fig. 6, wherein, aobvious
Showing device 20 includes that display floater 10, display floater 10 are the display surface described in any of the above-described embodiment
Plate, display floater 10 includes the thin film transistor (TFT) described in any of the above-described embodiment.It addition, the present embodiment
In, display device 20 can be the display devices such as mobile phone, wrist-watch, computer, TV, and the present embodiment is to this also
It is not particularly limited.
By foregoing description, thin film transistor (TFT), display floater and the display device in the embodiment of the present invention,
Wherein, thin film transistor (TFT) on the first direction that electric current transmits, the either side edge of light shield layer and the same side
Distance between the edge of channel region is more than or equal to the first predeterminable range, is being perpendicular to the of the sense of current
On two directions, the distance between the edge of the either side edge of light shield layer and the channel region of the same side more than or
Equal to the second predeterminable range.In the embodiment of the present invention, the either side edge of light shield layer is beyond the edge of channel region,
Make to inject the edge away from channel region of the light within thin film transistor (TFT) from light shield layer lateral edges, accordingly should
Light produced reflection light is not easily accessed channel region, it is to avoid light irradiates channel region and produces photoproduction current-carrying
Son, effectively reduces the leakage current that reflection light causes；Compared with prior art, in the embodiment of the present invention effectively
Reduce thin film transistor (TFT) by reflecting the leakage current that light causes so that the leakage current of thin film transistor (TFT) reduces, from
And the power consumption of display floater based on above-mentioned thin film transistor (TFT) can be reduced, it is achieved display floater and display device
Low frequency driving.
Note, above are only presently preferred embodiments of the present invention and institute's application technology principle.Those skilled in the art
It will be appreciated that the invention is not restricted to specific embodiment described here, can enter for a person skilled in the art
Row various obvious changes, readjust and substitute without departing from protection scope of the present invention.Therefore, though
So by above example, the present invention is described in further detail, but the present invention be not limited only to
Upper embodiment, without departing from the inventive concept, it is also possible to include other Equivalent embodiments more,
And the scope of the present invention is determined by scope of the appended claims.
Claims (14)
1. a thin film transistor (TFT), it is characterised in that including:
Underlay substrate；
It is positioned at the light shield layer on described underlay substrate；
Be positioned at described light shield layer deviate from described underlay substrate side and with described light shield layer insulation arrange active
Layer, described active layer includes channel region；
Described thin film transistor (TFT) also includes: source electrode and drain electrode, and the electric current of described thin film transistor (TFT) is at described source electrode
And transmitting between described drain electrode, wherein, the sense of current of described thin film transistor (TFT) is first direction, second party
To being perpendicular to described first direction；
In said first direction, the limit of the described channel region of the either side edge of described light shield layer and the same side
Distance between edge is more than or equal to the first predeterminable range；In this second direction, described light shield layer
Distance between the edge of the described channel region of either side edge and the same side more than or equal to second preset away from
From.
Thin film transistor (TFT) the most according to claim 1, it is characterised in that described thin film transistor (TFT) also wraps
Include: in said first direction, be positioned at the district that is lightly doped of described channel region both sides, and be positioned at each described gently
Doped region deviates from the heavily doped region of described channel region side, described in the size range in district be lightly doped be
0.5 μm～2.5 μm.
Thin film transistor (TFT) the most according to claim 2, it is characterised in that in said first direction,
Described light shield layer is lightly doped district being perpendicular to described in covering in the projection being perpendicular on described underlay substrate direction
State the projection on underlay substrate direction.
Thin film transistor (TFT) the most according to claim 1, it is characterised in that described thin film transistor (TFT) also wraps
Including: grid, the projection on the direction being perpendicular to described underlay substrate of the described grid covers described channel region and exists
It is perpendicular to the projection on the direction of described underlay substrate.
Thin film transistor (TFT) the most according to claim 4, it is characterised in that in said first direction,
The projection on the direction being perpendicular to described underlay substrate of the described grid equal to described channel region be perpendicular to described
Projection on the direction of underlay substrate.
Thin film transistor (TFT) the most according to claim 4, it is characterised in that described thin film transistor (TFT) is top
Grid structure.
Thin film transistor (TFT) the most according to claim 4, it is characterised in that described thin film transistor (TFT) is double
Grid structure.
Thin film transistor (TFT) the most according to claim 1, it is characterised in that described thin film transistor (TFT) is low
Temperature polycrystalline SiTFT, described active layer is low-temperature polysilicon silicon active layer.
Thin film transistor (TFT) the most according to claim 1, it is characterised in that described first predeterminable range
Scope is 2.5 μm～6 μm.
Thin film transistor (TFT) the most according to claim 9, it is characterised in that described first predeterminable range
It is 3 μm.
11. thin film transistor (TFT)s according to claim 1, it is characterised in that described second predeterminable range
In the range of 2 μm～6 μm.
12. thin film transistor (TFT)s according to claim 11, it is characterised in that described second predeterminable range
It is 3 μm.
13. 1 kinds of display floaters, it is characterised in that include the thin film as described in any one of claim 1-12
Transistor.
14. 1 kinds of display devices, it is characterised in that include the display floater described in claim 13.
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