CN105914187B - A kind of semiconductor equipment and preparation method thereof - Google Patents
A kind of semiconductor equipment and preparation method thereof Download PDFInfo
- Publication number
- CN105914187B CN105914187B CN201610462387.1A CN201610462387A CN105914187B CN 105914187 B CN105914187 B CN 105914187B CN 201610462387 A CN201610462387 A CN 201610462387A CN 105914187 B CN105914187 B CN 105914187B
- Authority
- CN
- China
- Prior art keywords
- glass
- fluorine
- semiconductor equipment
- passivation layer
- alumina silicate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Abstract
A kind of semiconductor devices, in particular by using aluminosilicate as the passivation semiconductor devices of basis, such as lead oxide alumina silicate glass, metal oxide glass protective layer is suitable for high-voltage applications.In order to increase reliability of the semiconductor devices under reverse biased and high temperature thermal stress, which usually contains concentration in 100ppm(mol, mole percent) arrive 1000ppm(mol, mole percent) fluorine.
Description
Technical field
Present invention is applicable generally to semiconductor equipments, in particular by using aluminosilicate as the passivation semiconductor of basis
Equipment, such as aoxidizes leadaluminosilicate, and metal oxide protective layer is suitable for high-voltage applications.More specifically, it relates to highly reliable
Property device, especially under reverse biased and high temperature stress.
Background technique
It is well known that because semiconductor equipment parameter is tired near PN junction for the impurity contamination on surface and removable charge
Long-pending hypersensitivity, in high request application environment, the surface passivation technique of semiconductor equipment is the primary hand for obtaining high reliability
One of section.Among various passivation design and method, it is known that the prior art, technology for passivating glass, such as October nineteen sixty-five
19, United States Patent (USP) 3212921 provided good chemistry, mechanical, electric property passivating film for semiconductor equipment.For into
One step improve passivation glass environment, machinery, electric property, on March 26th, 2003 publication Chinese patent CN1298029C or
The Chinese patent CN100589234C that person issues on July 5th, 2006 proposes to constitute glass component progress suitable control.
In the prior art, there are also the known schemes for characteristics such as machinery, optics, the dielectrics of improvement glass.To spy
Different optical glass application, the United States Patent (USP) 2642633 and the beauty on May 8th, 1984 in the technology that has powerful connections such as March 4 nineteen forty-six
State's patent 44475450；To the silicon dioxide layer of semiconductor equipment, there are also the U.S. in background technique on January 20th, 1 is special
The U.S. Patent application 2009/0114990 in sharp on May 7th, 3933530 and 2009, introduces fluorine by Halogenation process respectively, comes
Enhance the stability of the threshold voltage of MOS transistor.
According to the glass passivation layer of above-mentioned background technique preparation usually good protection can be provided to semiconductor equipment.But
Contamination of the passivation layer to being likely to occur, the alkali metal ion such as quickly spread is very sensitive, especially sodium ion, and subsequent
In manufacturing process, including metal contact to be formed in addition encapsulation process in contamination.Stain bring the result is that: in BT-stress
Under the conditions of, such as under the high temperature caused by reverse bias and strong electrical field, sodium ion finally accumulates the reverse-biased electricity in semiconductor equipment
Near polar region, conductive channel is formed in device surface, this electrical characteristics that will lead to semiconductor equipment is degenerated, or even is generated permanent
Failure.
Therefore, it is necessary to further increase to technology for passivating glass, slow down even being eliminated glassivation described above and partly lead
The degeneration of body device characteristics.
Summary of the invention
The present invention is based on above-mentioned technical problems to provide a kind of semiconductor equipment.
A kind of semiconductor equipment, including alumina silicate glass passivation layer, it is characterised in that: the alumina silicate glass passivation
Layer containing concentration in 100ppm(mol, mole percent) arrive 1000ppm(mol, mole percent) fluorine.
The present invention also provides the production methods of above-mentioned semiconductor device, it is characterised in that: fluorine passes through at 150 DEG C -400 DEG C
At a temperature of, it is directly fluorinated, is introduced in the alumina silicate glass passivation layer.
Preferably, gaseous fluorine is introduced in the alumina silicate glass passivation layer, in the sintering process of glass powder, institute
State the surface that glass powder is deposited on the semiconductor equipment.
Preferably, fluorine by 150 DEG C -400 DEG C at a temperature of, directly be fluorinated, be introduced in dispersibility from 10nm to
The nanoscale passivation glass powder of 100nm.
Preferably, fluorine is introduced in the aluminosilicate as the additive of the other components in original glass batch
Glass passivation layer, the original glass batch include Al2O3, SiO2And PbO.
Mixed in the alumina silicate glass it is a certain number of there is high electronegative fluorine ion, may reduce in principle
The movement of other alkaline impurities quickly spread, especially sodium ion.Therefore, the positive charge near semiconductor equipment PN junction
Accumulation also reduce therewith.Correspondingly, it under BT-stress test condition, at least within the scope of specified strain temperature, partly leads
The electrical characteristics degradation of body equipment reduces.
Detailed description of the invention
Fig. 1 prior art and the present invention are formed by the polarization curve of the volume resistivity of passivation glass layer.
Specific embodiment
Embodiments of the present invention are described in detail below in conjunction with attached drawing.
One kind is using aluminosilicate as basis, comprising such as lead oxide (PbO) or zinc oxide (ZnO) aluminosilicate, glass
Glass is passivated semiconductor equipment.In order to increase reliability of the semiconductor equipment under reverse biased and high temperature thermal stress, the aluminium silicon
Silicate glass passivation layer contains concentration in 100ppm(mol, molar concentration) arrive 1000ppm(mol, molar concentration) fluorine.
It is observed that in lead oxide (PbO)-alumina silicate glass passivation layer, such as: the glass from Japanese NEG company
The resistivity (being measured using ASTM D-257) of GP-200, glass passivation layer are compared to the 2*10 of the prior art11 Ω·cm -
3*10114*10 has been arrived in cm range, promotion14 Ω·cm - 2*1015 Ω·cm。
After observing that glassivation layer resistivity is different, we, it is also observed that semiconductor equipment of the invention glass
For glass passivation layer under the conditions of BT-stress, the deterioration of electrical characteristics is more bad than the glass passivation layer of the semiconductor equipment of the prior art
Change smaller: 10 times can be reduced significantly.That is before BT-Stress test (150 DEG C, 168 hours, 1000V) and after test, instead
It is no more than 10% to the variation of leakage current.It is worth noting that, the semiconductor devices glassivation made according to the embodiment of the present invention
Layer is compared to the glass passivation layer of prior art production under up to 150 DEG C -175 °C of temperature environment, has higher flat
The equal out-of-service time (for the 100%-150% of the prior art).
However for corresponding mechanism, we none explicitly explain.It is likely to be in alumina silicate glass and mixes
It is a certain number of that there is the reason of high electronegative fluorine ion.In principle, other alkali metal ions quickly spread are resulted in
Therefore the reduction of the mobility of contamination, especially sodium ion cause the accumulation of the positive charge near semiconductor equipment PN junction to subtract
It is few.Correspondingly, under the conditions of BT-stress (at least within the scope of specified strain temperature), electrical characteristics degradation obviously drops
It is low.
A kind of production method of semiconductor equipment of the invention are as follows:
It is introduced on lead oxide-aluminosilicate (Japanese NEG Products: GP-200) glassivation surface of semiconductor crystal wafer
Fluorine:
Firstly, wafer is at a temperature of 200 DEG C, F2+N2(2% F2, 5L/min) and it handles 60 minutes in atmosphere；Secondly, wafer
At a temperature of 200 DEG C, N2It anneals 360 minutes in atmosphere.
The production and technology for passivating glass of other preliminary processes and subsequent technique referring to existing high-voltage semi-conductor equipment
It carries out.
It should be noted that fluorine is introduced there are many method.Such as draw in certain process and/or in glass component
Enter, for example, original glass powder can be converted into the glass powder of the high BET factor (nano measurement value is in 10nm by being directly fluorinated
To between 100nm).Or fluorine can be with a suitable fluoride form (such as PbF2Or AlF3) cooperate as original glass
The additive of material is introduced into, and is either introduced into the existing known chemistry skillfully grasped or physical method.Therefore the present invention
Basic scheme be simply included in semiconductor device surface glassy layer introduce concentration in 100ppm(mol, mole percent)
To 1000ppm(mol, mole percent) between fluorine.
Claims (2)
1. a kind of semiconductor equipment, the PN junction with surface termination, including Zn- or Pb- alumina silicate glass passivation layer, feature
Be: the alumina silicate glass passivation layer contains mole percent in the fluorine of 100ppm to 1000ppm；The fluorine by
It at a temperature of 150 DEG C -400 DEG C, is directly fluorinated, is introduced in dispersibility in the nanoscale passivation glass powder of 10nm to 100nm.
2. a kind of semiconductor equipment as described in claim 1, it is characterised in that: fluorine is as other in original glass batch
The additive of component is introduced in the alumina silicate glass passivation layer, and the original glass batch includes Al2O3, SiO2With
PbO；The fluorine is introduced into the form of the fluoride of glass forming constituents, and the fluoride includes PbF2Or AlF3。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610462387.1A CN105914187B (en) | 2016-06-23 | 2016-06-23 | A kind of semiconductor equipment and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610462387.1A CN105914187B (en) | 2016-06-23 | 2016-06-23 | A kind of semiconductor equipment and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105914187A CN105914187A (en) | 2016-08-31 |
| CN105914187B true CN105914187B (en) | 2019-02-05 |
Family
ID=56758436
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610462387.1A Active CN105914187B (en) | 2016-06-23 | 2016-06-23 | A kind of semiconductor equipment and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105914187B (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101337770A (en) * | 2008-08-18 | 2009-01-07 | 苏州新吴硝子科技有限公司 | High strength aluminosilicate glass and chemically toughening process thereof |
| CN101685835A (en) * | 2008-07-31 | 2010-03-31 | 株式会社半导体能源研究所 | Semiconductor device and method for manufacturing the same |
| CN103730430A (en) * | 2013-12-16 | 2014-04-16 | 启东吉莱电子有限公司 | Multilayer composite membrane passivation structure of table top high-power semiconductor device and manufacturing technology of multilayer composite membrane passivation structure of table top high-power semiconductor device |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090197048A1 (en) * | 2008-02-05 | 2009-08-06 | Jaymin Amin | Damage resistant glass article for use as a cover plate in electronic devices |
| EP2480508B1 (en) * | 2009-09-25 | 2014-11-05 | Schott AG | Aluminosilicate glass having high thermal stability and low processing temperature |
-
2016
- 2016-06-23 CN CN201610462387.1A patent/CN105914187B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101685835A (en) * | 2008-07-31 | 2010-03-31 | 株式会社半导体能源研究所 | Semiconductor device and method for manufacturing the same |
| CN101337770A (en) * | 2008-08-18 | 2009-01-07 | 苏州新吴硝子科技有限公司 | High strength aluminosilicate glass and chemically toughening process thereof |
| CN103730430A (en) * | 2013-12-16 | 2014-04-16 | 启东吉莱电子有限公司 | Multilayer composite membrane passivation structure of table top high-power semiconductor device and manufacturing technology of multilayer composite membrane passivation structure of table top high-power semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105914187A (en) | 2016-08-31 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI493628B (en) | Method of semiconductor integrated circuit fabrication | |
| Ragnarsson et al. | Molecular-beam-deposited yttrium-oxide dielectrics in aluminum-gated metal–oxide–semiconductor field-effect transistors: Effective electron mobility | |
| TWI388528B (en) | Method for producing an electronic component passivated by lead free glass | |
| WO2014208520A1 (en) | Thin film transistor and method for manufacturing same | |
| US9006113B2 (en) | Glass composition for protecting semiconductor junction, method of manufacturing semiconductor device and semiconductor device | |
| US9570408B2 (en) | Resin-sealed semiconductor device and method of manufacturing resin-sealed semiconductor device | |
| WO2016052597A1 (en) | Bonded substrate and method for manufacturing same, and support substrate for bonding | |
| US20140353851A1 (en) | Glass composition for protecting semiconductor junction, method of manufacturing semiconductor device and semiconductor device | |
| JPWO2012160704A1 (en) | Semiconductor junction protecting glass composition, semiconductor device manufacturing method, and semiconductor device | |
| US10186425B2 (en) | Method of manufacturing semiconductor device and resist glass | |
| US11705328B2 (en) | Semiconductor-on-insulator (SOI) substrate and method for forming | |
| Liu et al. | High-mobility SiC MOSFET with low density of interface traps using high pressure microwave plasma oxidation | |
| CN105914187B (en) | A kind of semiconductor equipment and preparation method thereof | |
| KR20180116857A (en) | Electrostatic Chuck sealed with Sealant and method for preparing the same | |
| TWI615370B (en) | Semiconductor component coated glass | |
| JP6618944B2 (en) | Semiconductor device and electric device | |
| CN106129019B (en) | A kind of semiconductor devices and preparation method thereof | |
| US6667232B2 (en) | Thin dielectric layers and non-thermal formation thereof | |
| WO2013168238A1 (en) | Glass composition for semiconductor junction protection, method for producing semiconductor device, and semiconductor device | |
| WO2012160962A1 (en) | Semiconductor device production method and semiconductor device | |
| JP6877507B2 (en) | Semiconductor equipment and electrical equipment | |
| CN106186725B (en) | A kind of glassivation semiconductor devices and preparation method thereof | |
| TW201434777A (en) | Quartz element for plasma processing chamber and plasma processing equipment | |
| Schwab et al. | Investigation of electric field induced ion migration in semiconductor encapsulation materials without the interference of electron conductivity | |
| JPWO2012160962A1 (en) | Semiconductor device manufacturing method and semiconductor device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |