CN105912812B - A kind of method and apparatus of the full skirt parameter of determining support insulator - Google Patents
A kind of method and apparatus of the full skirt parameter of determining support insulator Download PDFInfo
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- CN105912812B CN105912812B CN201610286422.9A CN201610286422A CN105912812B CN 105912812 B CN105912812 B CN 105912812B CN 201610286422 A CN201610286422 A CN 201610286422A CN 105912812 B CN105912812 B CN 105912812B
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F30/00—Computer-aided design [CAD]
- G06F30/30—Circuit design
- G06F30/36—Circuit design at the analogue level
- G06F30/367—Design verification, e.g. using simulation, simulation program with integrated circuit emphasis [SPICE], direct methods or relaxation methods
Abstract
The embodiment of the invention discloses a kind of method and apparatus of the full skirt parameter of determining support insulator, are related to electrical distribution field, to solve the problem of that carrying out experimental study with support insulator test product in the prior art leads to that cost is high, time-consuming.This method comprises: obtaining the structural parameters of support insulator, and the structural parameters based on the support insulator establish the simulation model of the support insulator, and establish air field so that the simulation model is in air field；Obtain the value of the N group full skirt parameter of the support insulator；For the simulation model of the value with full skirt parameter described in every group, moisture film is added on the full skirt of the simulation model, and the simulation model after addition moisture film is emulated, to obtain the average field-strength of a air gap in the full skirt；According to the average field-strength of the same the air gap of N number of simulation model, the preferred value of the M full skirt parameters is determined from the value of the N group full skirt parameter.
Description
Technical field
The present invention relates to electrical distribution field, method more particularly, to a kind of full skirt parameter of determining support insulator and
Device.
Background technique
Support insulator (such as composite post insulator) is essential element in power Transmission engineering.With voltage
The continuous improvement of grade, composite insulating material are used widely in China at present because of its excellent resistance to Flashover Characteristics.But it is compound
Support insulator has the characteristics that volume is big, beveled structure is various, high cost.
Experimental study purely is carried out by a large amount of composite post insulator test product in the prior art, from these test products
The preferable test product of resistance to Flashover Characteristics is obtained, to be produced according to the parameter of the test product.But so not only cost it is high but also
Time-consuming.
Summary of the invention
The embodiment of the present invention provides a kind of method and apparatus of the full skirt parameter of determining support insulator, existing to solve
Have in technology and carry out experimental study with support insulator test product, leads to the problem of cost is high, time-consuming.
In order to achieve the above objectives, the embodiment of the present invention adopts the following technical scheme that
In a first aspect, a kind of method of the full skirt parameter of determining support insulator of the embodiment of the present invention, comprising: obtain pillar
The structural parameters of insulator, and the structural parameters based on the support insulator establish the simulation model of the support insulator,
And air field is established so that the simulation model is in air field；The value of the N group full skirt parameter of the support insulator is obtained,
Full skirt parameter described in every group includes M for characterizing the full skirt parameter of umbrella skirt construction, and the N is greater than or equal to 2, and the M is greater than
Or it is equal to 1；For the simulation model of the value with full skirt parameter described in every group, moisture film is added on the full skirt of the simulation model,
And the simulation model after addition moisture film is emulated, to obtain the average field-strength of a air gap in the full skirt；According to N number of
The average field-strength of the same the air gap of simulation model determines the M full skirt parameters from the value of the N group full skirt parameter
Preferred value.
Optionally, the full skirt of the support insulator includes at least the first gamp, umbellule, the second gamp successively arranged；
Full skirt parameter described in every group include first gamp stretch out parameter, first gamp and the umbellule stretching it is poor and
The umbrella spacing of first gamp and second gamp.
Optionally, the value for obtaining N group full skirt parameter includes: S for obtaining each full skirt parameter in M full skirt parameter
Value, S value of each full skirt parameter includes: that first gamp stretches out S of parameter and takes in the M full skirt parameter
S value of the stretching difference of value, first gamp and the umbellule and the umbrella of first gamp and second gamp
S value of spacing, the S are greater than or equal to 2；For S value of each full skirt parameter in the M full skirt parameter, press
Orthogonal test table obtains the value of N group full skirt parameter.
Optionally, the average field-strength of the same the air gap according to N number of simulation model, from the N group full skirt parameter
Value in determine that the preferred value of M full skirt parameters includes: the S value for each full skirt parameter, obtain each
The fiducial value of value, the fiducial value of each value are being averaged for the corresponding each simulation model of the value of the full skirt parameter
The average value of field strength；Determine minimum fiducial value in S fiducial value of the full skirt parameter；Determine that the minimum fiducial value is corresponding
The value of full skirt parameter, the preferred value as the full skirt parameter.
Optionally, in the S value for each full skirt parameter, the fiducial value for obtaining each value also wraps later
It includes: calculating the very poor of each full skirt parameter, in the very poor S fiducial value for the full skirt parameter of the full skirt parameter, high specific
Compared with the difference of value and minimum fiducial value.
Optionally, in the S value for each full skirt parameter, the fiducial value for obtaining each value also wraps later
It includes: calculating the variance of S fiducial value of each full skirt parameter.
Optionally, the method also includes: on the outside of the air field establish far field unit.
Second aspect, the embodiment of the invention provides a kind of devices of the full skirt parameter of determining support insulator, comprising:
Modeling module, for obtaining the structural parameters of support insulator, and the structural parameters based on the support insulator
The simulation model of the support insulator is established, and establishes air field so that the simulation model is in air field；
Full skirt parameter acquisition module, the value of the N group full skirt parameter for obtaining the support insulator, full skirt described in every group
Parameter includes M for characterizing the full skirt parameter of umbrella skirt construction, and the N is greater than or equal to 2, and the M is greater than or equal to 1；
Field strength obtains module, for the simulation model for the value with full skirt parameter described in every group, in the simulation model
Full skirt on add moisture film, and the simulation model after addition moisture film is emulated, to obtain a air gap in the full skirt
Average field-strength；
Full skirt parameter selecting module, for the average field-strength according to the same the air gap of N number of simulation model, from the N
The preferred value of the M full skirt parameters is determined in the value of group full skirt parameter.
Optionally, the full skirt of the support insulator includes at least the first gamp, umbellule, the second gamp successively arranged；
Full skirt parameter described in every group include first gamp stretch out parameter, first gamp and the umbellule stretching it is poor and
The umbrella spacing of first gamp and second gamp.
Optionally, full skirt parameter acquisition module takes specifically for obtaining S of each full skirt parameter in M full skirt parameter
Value, in the M full skirt parameter S value of each full skirt parameter include: the first gamp stretching parameter S value,
S value of the stretching difference of first gamp and the umbellule and the umbrella spacing of first gamp and second gamp
S value, the S be greater than or equal to 2；And for S value of each full skirt parameter in the M full skirt parameter, by just
Test table is handed over to obtain the value of N group full skirt parameter.
The method and device of the full skirt parameter of a kind of determining support insulator provided in an embodiment of the present invention, due to using imitative
True means carry out the optimization of full skirt parameter, to reduce research cost, also provide early period for the Selection and Design of external insulation
Theories integration.
Detailed description of the invention
In order to illustrate the technical solution of the embodiments of the present invention more clearly, below will be in embodiment or description of the prior art
Required attached drawing is briefly described, it should be apparent that, the accompanying drawings in the following description is only some realities of the invention
Example is applied, it for those of ordinary skill in the art, without creative efforts, can also be according to these attached drawings
Obtain other attached drawings.
Fig. 1 is a kind of flow chart of the method for the full skirt parameter of determining support insulator provided in an embodiment of the present invention；
Fig. 2 is support insulator structural schematic diagram provided in an embodiment of the present invention；
Fig. 3 is modeling schematic diagram provided in an embodiment of the present invention；
Fig. 4 is the umbrella skirt construction schematic diagram provided in an embodiment of the present invention to moisture film；
Fig. 5 is a kind of block diagram of the device of the full skirt parameter of determining support insulator provided in an embodiment of the present invention.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
Term "and/or" in the embodiment of the present invention, only a kind of incidence relation for describing affiliated partner, expression can deposit
In three kinds of relationships, for example, A and/or B, can indicate: individualism A exists simultaneously A and B, these three situations of individualism B.
In addition, character "/" in the embodiment of the present invention, typicallys represent the relationship that forward-backward correlation object is a kind of "or".
For the ease of clearly describing the technical solution of the embodiment of the present invention, in an embodiment of the present invention, use " the
One ", the printed words such as " second " distinguish function and the essentially identical identical entry of effect or similar item, and those skilled in the art can
To understand that the printed words such as " first ", " second " are not defined quantity and execution order.
Embodiment one
The embodiment of the invention provides a kind of method of the full skirt parameter of determining support insulator, the executing subjects of this method
It can be the device of the full skirt parameter of determining support insulator, which can be software, such as the software may include: limited
First simulation software ANSYS etc. can also be hardware, such as can be with a certain or certain hard in computer equipment or computer equipment
Part module.
As shown in Figure 1, this method may comprise steps of:
S101, the structural parameters for obtaining support insulator, and the structural parameters based on the support insulator establish the pillar
The simulation model of insulator, and air field is established so that the simulation model is in air field.
Support insulator can only have a section, be also possible to more piece and be formed by connecting.As shown in Fig. 2, support insulator is main
It is made of plug, full skirt, structural parameters include plug parameter and full skirt parameter.Wherein, plug parameter may include: that plug is straight
Diameter, plug height.Full skirt parameter includes: full skirt top rade θ, full skirt angle of declination α, if full skirt includes at least one big umbellule list
Member, one big umbellule unit include a gamp and a umbellule, then full skirt parameter can also include: that gamp stretches out parameter P1、
Big umbellule stretches out difference P2.Further, if full skirt includes multiple (at least two) big umbellule units, full skirt parameter can also be wrapped
It includes: the umbrella spacing P between adjacent gamp3。
Specifically in this step, optionally, emulation mould can be established according to the actual structural parameters of a support insulator
Type, exemplary, the embodiment of the present invention is the composite post insulator (5 to be put into operation with the wide ± 800kV extra-high voltage direct-current transmission engineering of cloud
Save it is short string series connection) structural parameters establish full-scale simulation model, simulation model can also be established just for a section therein.
In this example, for establishing full-scale simulation model, at this point, can be studied only for a wherein section in subsequent step,
Such as the first segment insulator due to concentrating on high-voltage end substantially along face high field area, it can be for positioned at the of high-voltage end
One section insulator determines its field distribution according to subsequent step.
It should be noted that due in the next steps, the P of simulation model1、P2、P3Can also it change, thus, in this step
It can not include these parameters (P in acquired structural parameters1、P2、P3), such as: these parameters can be write from memory in modeling
Recognize and is set as 0 or arbitrary value.
Optionally, with reference to Fig. 2, the full skirt of support insulator includes at least the first gamp successively arranged in the present embodiment
11, umbellule 12, the second gamp 13.
With reference to modeling schematic diagram shown in Fig. 3, this step can be finite element emulation software ANSYS according to above-mentioned pillar
The structural parameters of insulator establish the simulation model of support insulator, and establish air field so that the simulation model is in air
In.For example, Fig. 3 can be referred to, in the side of support insulator, establishing a half-circle area indicates air field.
Further, in the present embodiment in order to may be used also in this step closer to environment locating for practical support insulator
To include: to establish far field unit on the outside of air field.It is exemplary, with reference to Fig. 3, indicated in the semi-annular areas of the over-the-counter side of air
Far field unit.In fact it is also possible much larger than the electric field unit of air field that area is established on the outside of air field, but due to
When using finite element model for solving field distribution, the necessary bounded in domain, and electric field region is unbalanced field, therefore in the present embodiment
Far field unit is added when preferably establishing simulation model.
The value of the N group full skirt parameter of S102, acquisition support insulator, every group of full skirt parameter include M for characterizing full skirt
The full skirt parameter of structure, the N are greater than or equal to 2, and the M is greater than or equal to 1.
If M is 1, only using this full skirt parameter as research object in the present embodiment, in other structures parameter constant
In the case where, choose the preferred value of this full skirt parameter.
If M is more than or equal to 2, using multiple full skirt parameters as research object in the present embodiment, in other structures parameter
In the case where constant, the preferred value of this multiple full skirt parameter is chosen.At this point it is possible to consider the friendship of multiple full skirt parameters simultaneously
Mutually influence.
Preferably, as shown in Fig. 2, every group of full skirt parameter includes 3 full skirt parameters, specifically: the first gamp stretches out parameter
P1, the first gamp and the umbellule stretching difference P2And first gamp and second gamp umbrella spacing P3。
Based on this preferred embodiment, this step may include:
(1) S value of each full skirt parameter in M full skirt parameter, each full skirt ginseng in the M full skirt parameter are obtained
S several values includes: that stretch out S value of parameter, the stretching of first gamp and the umbellule poor for first gamp
S value and first gamp and second gamp umbrella spacing S value, the S be greater than or equal to 2.
It is exemplary, 3 values of each full skirt parameter in 3 full skirt parameters are obtained in the present embodiment, as shown in table 1, this 3
3 values of each full skirt parameter include: P in a full skirt parameter13 values, P23 values and P33 values.
Table 1
| Number of levels | P1(mm) | P2(mm) | P3(mm) |
| 1 | 66 | 16 | 105 |
| 2 | 72 | 20 | 108 |
| 3 | 78 | 25 | 115 |
(2) for S value of each full skirt parameter in M full skirt parameter, N group full skirt parameter is obtained by orthogonal test table
Value.
It is exemplary, for 3 values of each full skirt parameter in 3 full skirt parameters in the present embodiment, by L9 (33) orthogonal
Test table obtains the value of 9 groups of (9 tested numbers in corresponding table 2) full skirt parameters.Wherein, (3 L93) orthogonal test table such as 2 institute of table
Show:
2 orthogonal test table of table
If not using orthogonal experiment, combined according to 1 available 27, table, if carrying out emulation examination to each combination
It tests, inevitably results in the occupied time lengthening of entire method.9 can be only chosen by using orthogonal experiment in this present embodiment
A combination is used so as to reduce the subsequent test number (TN) emulated so as to save execution the present embodiment method
Time.
S103, for the simulation model of the value with every group of full skirt parameter, add moisture film on the full skirt of the simulation model,
And the simulation model after addition moisture film is emulated, to obtain the average field-strength of a air gap in the full skirt.
Exemplary, the value of 9 groups of full skirt parameters according to obtained in table 2 can be established initial imitative in step S101 respectively
9 composite post insulator models are obtained on the basis of true mode.With reference to Fig. 4, on full skirt surface, addition uniform thickness is 1mm's
Moisture film, simulation are drenched with rain state, are emulated to 9 insulation submodels of foundation, and simulation result (namely the electric field of insulator is obtained
Distribution).Further, the air gap average field-strength between full skirt is calculated according to simulation result, specifically, can seek
Electric field is to the integral in the air gap path, then seeks the ratio of integrated value and the air gap size to get the air gap has been arrived
Average field-strength.Specific algorithm can be not added herein and repeat with reference to the calculation formula of average field-strength in the prior art.
The air gap, which is chosen, between full skirt sees attached drawing 4, wherein L1 indicates 11 edge cascade of the first gamp and the umbellule with moisture film
The air gap between 12 edges, L2 are indicated between the air between 12 edge cascade of umbellule and 13 edge of the second gamp with moisture film
Gap, L3 indicate the air gap between 11 edge cascade of the first gamp and 13 edge of the second gamp with moisture film.
It is exemplary, the average field-strength of L1, L2 and L3 can be obtained through emulation in this step, then arbitrarily choose one
The average field-strength of a the air gap (L1, L2 or L3) is applied to subsequent step.It is of course also possible to only obtain wherein one through emulation
The average field-strength of a the air gap, and the value is applied to subsequent step.Preferably, the present embodiment is by the average field-strength E of L3i
(i is the tested number in 2 orthogonal test table of table, EiIndicate the average field-strength of L3 in simulation model corresponding to tested number i) application
In subsequent step, to determine the preferred value of 3 full skirt parameters in the next steps.
S104, the average field-strength (E according to the same the air gap of N number of simulation model1~EN), from the N group full skirt parameter
The preferred value of M full skirt parameter is determined in value.
Preferably, the present embodiment is the average field-strength (E according to the L3 of 9 simulation models1~E9), from 9 groups of full skirt parameters
Value in determine P1、P2、P3Preferred value.
Preferably, this step may include:
(1) for the S of each full skirt parameter (such as S is 3) a value, the fiducial value of each value, each value are obtained
Fiducial value be the full skirt parameter the corresponding each simulation model of the value average field-strength average value, it is exemplary to join
Examine table 3.
Table 3
| P1 | P2 | P3 | |
| Fiducial value | W1 | Q1 | T1 |
| Fiducial value | W2 | Q2 | T2 |
| Fiducial value | W3 | Q3 | T3 |
Wherein, in conjunction with table 1, P1The value of number of levels 1 be 66mm, the fiducial value of the value is denoted as W1, and so on, it obtains
To P1Other values fiducial value W2、W3。P2The value of number of levels 1 be 16mm, the fiducial value of the value is denoted as Q1, successively
Analogize, obtains P1Other values fiducial value Q2、Q3。P3The value of number of levels 1 be 105mm, the fiducial value of the value is remembered
For T1, and so on, obtain P1Other values fiducial value T2、T3。
It is exemplary, in the present embodiment, such as obtain P13 fiducial value W1、W2、W3,Wherein, K1Indicate P1
Number of levels 1 corresponding to the sum of each average field-strength, similarly, K2、K3Respectively indicate P1Number of levels 2, corresponding to number of levels 3
The sum of each average field-strength.k1、k2、k3Respectively indicate P1The value of same level number occur in the value of 9 groups of full skirt parameters
Number.
Similarly, P is obtained23 fiducial value Q1、Q2、Q3: Wherein, K1Indicate P2Number of levels 1 corresponding to it is each flat
The sum of equal field strength, similarly, K2、K3Respectively indicate P2Number of levels 2, the sum of each average field-strength corresponding to number of levels 3.k1、k2、
k3Respectively indicate P2Same level number the number that occurs in the value of 9 groups of full skirt parameters of value.
Likewise, obtaining P33 fiducial value T1、T2、T3: Wherein, K1Indicate P3Number of levels 1 corresponding to it is each flat
The sum of equal field strength, similarly, K2、K3Respectively indicate P3Number of levels 2, the sum of each average field-strength corresponding to number of levels 3.k1、k2、
k3Respectively indicate P3Same level number the number that occurs in the value of 9 groups of full skirt parameters of value.
(2) minimum fiducial value in 3 fiducial values of each full skirt parameter is determined.
It is exemplary, in the present embodiment, P1、P2、P3The calculation formula of minimum fiducial value be respectively as follows: G1=min { W1,W2,
W3}、G2=min { Q1,Q2,Q3}、G3=min { T1,T2,T3}。
(3) value of the corresponding full skirt parameter of the minimum fiducial value, the preferred value as the full skirt parameter are determined.
It is exemplary, if P1Minimum fiducial value be W2, then the P1Preferred value be P1The 2nd number of levels corresponding take
Value 72mm.If P2Minimum fiducial value be Q1, then the P2Preferred value be P2The corresponding value 16mm of the 1st number of levels.Such as
Fruit P3Minimum fiducial value be T3, then the P3Preferred value be P3The corresponding value 115mm of the 3rd number of levels.
The method of the full skirt parameter of a kind of determining support insulator provided in an embodiment of the present invention, due to using simulation means
The optimization of full skirt parameter is carried out, to reduce research cost, also provides theory branch early period for the Selection and Design of external insulation
It holds.
It is further alternative, as shown in Figure 1, the embodiment of the present invention can with the following steps are included:
S105, very poor, the very poor S fiducial value for the full skirt parameter of the full skirt parameter for calculating each full skirt parameter
In, the difference of maximum fiducial value and minimum fiducial value.
It should be noted that this step can be executed the above-mentioned S104 the step of after (1).
It is exemplary, in the present embodiment, P1、P2、P3The very poor formula of calculating be respectively as follows:
R1=max { W1, W2, W3}-min{W1, W2, W3}
R2=max { Q1, Q2, Q3}-min{Q1, Q2, Q3}
R3=max { T1, T2, T3}-min{T1, T2, T3}
Further, compare P1、P2、P3Very poor R1、R2、R3Size, which full skirt parameter it is very poor big, indicate that
The influence of the full skirt parameter to support insulator field distribution is big, i.e., the influence to the resistance to Flashover Characteristics of the support insulator is big.
So as to further very poor be finely adjusted according to the preferred value of each full skirt parameter and to the preferred value.
It is further alternative, as shown in Figure 1, the method for the embodiment of the present invention can also include:
S105 ', for S value of each full skirt parameter, after the fiducial value for obtaining each value, calculate each full skirt
The variance of S fiducial value of parameter.
It should be noted that this step can be executed the above-mentioned S104 the step of after (1).
Firstly, obtaining the average value of N number of average field-strengthCalculation formula isSecondly, P1、P2、P3Calculating
The formula of variance is respectively as follows:
Wherein f1For P1Value number (S), can also be with
It is S-1, S-1, S 3 is preferably taken in the present embodiment；k1、k2、k3Respectively indicate P1Same level number value in 9 groups of full skirts
The number occurred in the value of parameter, the present embodiment are 3.
Wherein f2For P2Value number (S), can also
To be S-1, S-1, S 3 are preferably taken in the present embodiment；k1、k2、k3Respectively indicate P2Same level number value in 9 groups of umbrellas
The number occurred in the value of skirt parameter, the present embodiment are 3.
Wherein f3For P3Value number (S), can also be with
It is S-1, S-1, S 3 is preferably taken in the present embodiment；k1、k2、k3Respectively indicate P3Same level number value in 9 groups of full skirts
The number occurred in the value of parameter, the present embodiment are 3.
Further, P is being obtained1、P2、P3Variance V1、V2、V3Later, can inquire F distribution values table obtain it is corresponding
Conspicuousness (sig), to carry out significance test.Compare P1、P2、P3Sig, the sig of which full skirt parameter is big, indicates that
The influence of the full skirt parameter to support insulator field distribution is big, i.e., the influence to the resistance to Flashover Characteristics of the support insulator is big.
Embodiment two
The embodiment of the invention provides a kind of device of the full skirt parameter of determining support insulator, which can be software
Or hardware, wherein the realization of each functional module can refer to above-described embodiment, details are not described herein.As shown in figure 5, the device
Include:
Modeling module 51 is joined for obtaining the structural parameters of support insulator, and based on the structure of the support insulator
Number establishes the simulation model of the support insulator, and establishes air field so that the simulation model is in air field；
Full skirt parameter acquisition module 52, the value of the N group full skirt parameter for obtaining the support insulator, umbrella described in every group
Skirt parameter includes M for characterizing the full skirt parameter of umbrella skirt construction, and the N is greater than or equal to 2, and the M is greater than or equal to 1；
Field strength obtains module 53, for the simulation model for the value with full skirt parameter described in every group, in the emulation mould
Moisture film is added on the full skirt of type, and the simulation model after addition moisture film is emulated, to obtain in the full skirt between an air
The average field-strength of gap；
Full skirt parameter selecting module 54, for the average field-strength according to the same the air gap of N number of simulation model, from described
The preferred value of the M full skirt parameters is determined in the value of N group full skirt parameter.
Optionally, the full skirt of the support insulator includes at least the first gamp, umbellule, the second gamp successively arranged；
Full skirt parameter described in every group include first gamp stretch out parameter, first gamp and the umbellule stretching it is poor and
The umbrella spacing of first gamp and second gamp.
Optionally, full skirt parameter acquisition module 52 takes specifically for obtaining S of each full skirt parameter in M full skirt parameter
Value, in the M full skirt parameter S value of each full skirt parameter include: the first gamp stretching parameter S value,
S value of the stretching difference of first gamp and the umbellule and the umbrella spacing of first gamp and second gamp
S value, the S be greater than or equal to 2；And for S value of each full skirt parameter in the M full skirt parameter, by just
Test table is handed over to obtain the value of N group full skirt parameter.
Optionally, full skirt parameter selecting module 54 is specifically used for the S value for each full skirt parameter, and acquisition each takes
The fiducial value of value, the fiducial value of each value are the mean field of the corresponding each simulation model of the value of the full skirt parameter
Strong average value；Determine minimum fiducial value in S fiducial value of the full skirt parameter；Determine the corresponding umbrella of the minimum fiducial value
The value of skirt parameter, the preferred value as the full skirt parameter.
Optionally, which can also include: to calculate very poor unit 55, calculate very poor unit 55 for calculating each full skirt
Parameter it is very poor, in the very poor S fiducial value for the full skirt parameter of the full skirt parameter, maximum fiducial value and minimum fiducial value
Difference.
Optionally, which can also include: to calculate variance unit 56, calculate variance unit 56 and be specifically used in the needle
To S value of each full skirt parameter, after the fiducial value for obtaining each value, S fiducial value of each full skirt parameter is calculated
Variance.
Optionally, modeling module 51 can be also used for establishing far field unit on the outside of the air field.
The device of the full skirt parameter of a kind of determining support insulator provided in an embodiment of the present invention, due to using simulation means
The optimization of full skirt parameter is carried out, to reduce research cost, also provides theory branch early period for the Selection and Design of external insulation
It holds.
In several embodiments provided herein, it should be understood that disclosed system, device and method can be with
It realizes by another way.For example, the apparatus embodiments described above are merely exemplary, for example, the unit
It divides, only a kind of logical function partition, there may be another division manner in actual implementation, such as multiple units or components
It can be combined or can be integrated into another system, or some features can be ignored or not executed.Another point, it is shown or
The mutual coupling, direct-coupling or communication connection discussed can be through some interfaces, the indirect coupling of device or unit
It closes or communicates to connect, can be electrical property, mechanical or other forms.
The unit as illustrated by the separation member may or may not be physically separated, aobvious as unit
The component shown may or may not be physical unit, it can and it is in one place, or may be distributed over multiple
In network unit.It can select some or all of unit therein according to the actual needs to realize the mesh of this embodiment scheme
's.
It, can also be in addition, the functional units in various embodiments of the present invention may be integrated into one processing unit
It is that the independent physics of each unit includes, can also be integrated in one unit with two or more units.Above-mentioned integrated list
Member both can take the form of hardware realization, can also realize in the form of hardware adds SFU software functional unit.
The above-mentioned integrated unit being realized in the form of SFU software functional unit can store and computer-readable deposit at one
In storage media.Above-mentioned SFU software functional unit is stored in a storage medium, including some instructions are used so that a computer
Equipment (can be personal computer, server or the network equipment etc.) executes the portion of each embodiment the method for the present invention
Step by step.And storage medium above-mentioned includes: USB flash disk, mobile hard disk, read-only memory (Read-Only Memory, abbreviation
ROM), random access memory (Random Access Memory, abbreviation RAM), magnetic or disk etc. are various can store
The medium of program code.
Finally, it should be noted that the above embodiments are merely illustrative of the technical solutions of the present invention, rather than its limitations；Although
Present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that: it still may be used
To modify the technical solutions described in the foregoing embodiments or equivalent replacement of some of the technical features；
And these are modified or replaceed, technical solution of various embodiments of the present invention that it does not separate the essence of the corresponding technical solution spirit and
Range.
Claims (5)
1. a kind of method of the full skirt parameter of determining support insulator characterized by comprising
The structural parameters of support insulator are obtained, and the structural parameters based on the support insulator establish the support insulator
Simulation model, and establish air field so that the simulation model is in air field；
The value of the N group full skirt parameter of the support insulator is obtained, full skirt parameter described in every group includes M for characterizing full skirt knot
The full skirt parameter of structure, the N are greater than or equal to 2, and the M is greater than or equal to 1；
For the simulation model of the value with full skirt parameter described in every group, moisture film is added on the full skirt of the simulation model, and right
Simulation model after addition moisture film is emulated, to obtain the average field-strength of a air gap in the full skirt；
According to the average field-strength of the same the air gap of N number of simulation model, M are determined from the value of the N group full skirt parameter
The preferred value of the full skirt parameter；
The full skirt of the support insulator includes at least the first gamp, umbellule, the second gamp successively arranged；Full skirt described in every group
Parameter include first gamp stretch out parameter, first gamp and the umbellule stretching is poor and first gamp
With the umbrella spacing of second gamp；
It is described obtain N group full skirt parameter value include:
S value of each full skirt parameter in M full skirt parameter is obtained, S of each full skirt parameter in the M full skirt parameter
Value include: first gamp stretch out S value of parameter, first gamp and the umbellule stretch out that poor S is a to be taken
S value of value and the umbrella spacing of first gamp and second gamp, the S are greater than or equal to 2；
For S value of each full skirt parameter in the M full skirt parameter, N group full skirt parameter is obtained by orthogonal test table
Value；
The average field-strength of the same the air gap according to N number of simulation model is determined from the value of the N group full skirt parameter
The preferred value of M full skirt parameters includes:
For S value of each full skirt parameter, the fiducial value of each value is obtained, the fiducial value of each value is the umbrella
The average value of the average field-strength of the corresponding each simulation model of the value of skirt parameter；
Determine minimum fiducial value in S fiducial value of the full skirt parameter；
Determine the value of the corresponding full skirt parameter of the minimum fiducial value, the preferred value as the full skirt parameter.
2. the method according to claim 1, wherein being obtained in the S value for each full skirt parameter
After the fiducial value of each value further include:
Calculate the very poor of each full skirt parameter, in the very poor S fiducial value for the full skirt parameter of the full skirt parameter, high specific
Compared with the difference of value and minimum fiducial value.
3. the method according to claim 1, wherein being obtained in the S value for each full skirt parameter
After the fiducial value of each value further include:
Calculate the variance of S fiducial value of each full skirt parameter.
4. method according to claim 1-3, which is characterized in that the method also includes: in the air field
Outside establish far field unit.
5. a kind of device of the full skirt parameter of determining support insulator characterized by comprising
Modeling module is established for obtaining the structural parameters of support insulator, and based on the structural parameters of the support insulator
The simulation model of the support insulator, and air field is established so that the simulation model is in air field；
Full skirt parameter acquisition module, the value of the N group full skirt parameter for obtaining the support insulator, full skirt parameter described in every group
Including M for characterizing the full skirt parameter of umbrella skirt construction, the N is greater than or equal to 2, and the M is greater than or equal to 1；
Field strength obtains module, for the simulation model for the value with full skirt parameter described in every group, in the umbrella of the simulation model
It adds moisture film on skirt, and the simulation model after addition moisture film is emulated, to obtain in the full skirt the flat of a air gap
Equal field strength；
Full skirt parameter selecting module, for the average field-strength according to the same the air gap of N number of simulation model, from the N group umbrella
The preferred value of the M full skirt parameters is determined in the value of skirt parameter；
The full skirt of the support insulator includes at least the first gamp, umbellule, the second gamp successively arranged；Full skirt described in every group
Parameter include first gamp stretch out parameter, first gamp and the umbellule stretching is poor and first gamp
With the umbrella spacing of second gamp；
Full skirt parameter acquisition module is specifically used for obtaining S value of each full skirt parameter in M full skirt parameter, the M umbrella
S value of each full skirt parameter includes: that first gamp stretches out S value of parameter, first gamp in skirt parameter
With S value of the umbrella spacing of the S value and first gamp and second gamp of the stretching difference of the umbellule, institute
S is stated more than or equal to 2；And for S value of each full skirt parameter in the M full skirt parameter, N is obtained by orthogonal test table
The value of group full skirt parameter.
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| CN106446415B (en) * | 2016-09-27 | 2019-03-08 | 国网湖北省电力公司检修公司 | A kind of substation's support insulator center line extraction method based on point cloud data |
| CN108984944B (en) * | 2018-08-02 | 2023-05-02 | 南方电网科学研究院有限责任公司 | Method and device for selecting parameters of umbrella skirt of transformer sleeve |
| CN109598065A (en) * | 2018-12-05 | 2019-04-09 | 西南交通大学 | The acquisition methods of insulator charged contamination distribution under a kind of flow fields environment |
| CN111553062B (en) * | 2020-04-17 | 2023-06-27 | 中国南方电网有限责任公司超高压输电公司检修试验中心 | Method and system for judging whether insulator ball head is separated |
| CN112560304B (en) * | 2020-12-02 | 2023-05-09 | 中国地质大学（北京） | Umbrella skirt micro-parameter design method for post insulator based on rain-flash characteristics |
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| CN102694352A (en) * | 2012-06-07 | 2012-09-26 | 甘肃省电力公司电力科学研究院 | Method for improving insulator potential distribution in overhead power transmission line |
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| CN102694352A (en) * | 2012-06-07 | 2012-09-26 | 甘肃省电力公司电力科学研究院 | Method for improving insulator potential distribution in overhead power transmission line |
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Effective date of registration: 20210804 Address after: 510663 3 building, 3, 4, 5 and J1 building, 11 building, No. 11, Ke Xiang Road, Luogang District Science City, Guangzhou, Guangdong. Patentee after: China Southern Power Grid Research Institute Co.,Ltd. Patentee after: SOUTH CHINA University OF TECHNOLOGY Address before: 510080 West Tower, Yuedian building, No.8 shuijungang, Dongfeng East Road, Yuexiu District, Guangzhou City, Guangdong Province Patentee before: China Southern Power Grid Research Institute Co.,Ltd. Patentee before: SOUTH CHINA University OF TECHNOLOGY Patentee before: CSG POWER GRID TECHNOLOGY RESEARCH CENTER |