CN105912812A - Method and device for determining shed parameters of post insulator - Google Patents
Method and device for determining shed parameters of post insulator Download PDFInfo
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Abstract
The embodiment of the invention discloses a method and a device for determining shed parameters of a post insulator, relates to the field of power transmission, and aims to solve the problems of high manufacturing cost and long consumed time caused by experimental research by using a post insulator test sample in the prior art. The method comprises the following steps: acquiring structural parameters of a post insulator, establishing a simulation model of the post insulator based on the structural parameters of the post insulator, and establishing an air field so that the simulation model is positioned in the air field; obtaining the values of N groups of shed parameters of the post insulator; adding a water film on the umbrella skirt of the simulation model aiming at the simulation model with each group of umbrella skirt parameter values, and simulating the simulation model added with the water film to obtain the average field intensity of an air gap in the umbrella skirt; and determining the optimal values of M umbrella skirt parameters from the values of the N groups of umbrella skirt parameters according to the average field intensity of the same air gap of the N simulation models.
Description
Technical field
The present invention relates to electrical distribution field, especially relate to a kind of full skirt parameter determining support insulator method and
Device.
Background technology
Support insulator (such as composite post insulator) is requisite element in power transmission engineering.Along with voltage
Improving constantly of grade, composite insulating material is used widely in China at present because of the resistance to Flashover Characteristics of its excellence.But it is compound
Support insulator has that volume is big, beveled structure is various, high cost feature.
Prior art purely relies on substantial amounts of composite post insulator test product research experiment, with from these test products
Obtain the preferable test product of resistance to Flashover Characteristics, in order to produce according to the parameter of this test product.But, the most not only cost high but also
Time-consuming long.
Summary of the invention
Embodiments of the invention provide the method and apparatus of a kind of full skirt parameter determining support insulator, existing in order to solve
Have in technology by support insulator test product research experiment, cause that cost is high, the problem of time-consuming length.
For reaching above-mentioned purpose, embodiments of the invention adopt the following technical scheme that
First aspect, the method for a kind of full skirt parameter determining support insulator of the embodiment of the present invention, including: obtain pillar
The structural parameters of insulator, and structural parameters based on described support insulator set up the phantom of described support insulator,
And set up air field so that described phantom is in air field；Obtain the value of the N group full skirt parameter of described support insulator,
Often organizing described full skirt parameter and include that M is individual for characterizing the full skirt parameter of umbrella skirt construction, described N is more than or equal to 2, and described M is more than
Or equal to 1；For having the phantom of the value often organizing described full skirt parameter, the full skirt of this phantom adds moisture film,
And the phantom after adding moisture film is emulated, to obtain the average field-strength of a air gap in this full skirt；According to N number of
The average field-strength of the same the air gap of phantom, determines M described full skirt parameter from the value of described N group full skirt parameter
Preferred value.
Optionally, the full skirt of described support insulator at least includes arranging successively the first gamp, umbellule, the second gamp；
Often organize described full skirt parameter include described first gamp stretch out parameter, described first gamp and described umbellule stretch out poor and
Described first gamp and the umbrella spacing of described second gamp.
Optionally, the value of described acquisition N group full skirt parameter includes: obtain the S of each full skirt parameter in M full skirt parameter individual
Value, in described M full skirt parameter, S value of each full skirt parameter includes: described first gamp stretches out the S of parameter and takes
Value, described first gamp stretch out S poor value and described first gamp and the umbrella of described second gamp with described umbellule
S value of spacing, described S is more than or equal to 2；For S value of each full skirt parameter in described M full skirt parameter, press
Orthogonal test table obtains the value of N group full skirt parameter.
Optionally, the average field-strength of the described same the air gap according to N number of phantom, from described N group full skirt parameter
Value in determine that the preferred value of M described full skirt parameter includes: for S value of each full skirt parameter, obtain each
The fiducial value of value, the fiducial value of described each value is the average of each phantom corresponding to this value of this full skirt parameter
The meansigma methods of field intensity；Determine minimum fiducial value in S fiducial value of described full skirt parameter；Determine that described minimum fiducial value is corresponding
The value of full skirt parameter, as the preferred value of this full skirt parameter.
Optionally, in described S the value for each full skirt parameter, also wrap after obtaining the fiducial value of each value
Include: calculate the extreme difference of each full skirt parameter, in S the fiducial value that extreme difference is this full skirt parameter of described full skirt parameter, high specific
Relatively value and the difference of minimum fiducial value.
Optionally, in described S the value for each full skirt parameter, also wrap after obtaining the fiducial value of each value
Include: calculate the variance of S fiducial value of each full skirt parameter.
Optionally, described method also includes: set up far field unit in the outside of described air field.
Second aspect, embodiments provides the device of a kind of full skirt parameter determining support insulator, including:
MBM, for obtaining the structural parameters of support insulator, and structural parameters based on described support insulator
Set up the phantom of described support insulator, and set up air field so that described phantom is in air field；
Full skirt parameter acquisition module, for obtaining the value of the N group full skirt parameter of described support insulator, often organizes described full skirt
Parameter includes M, and for characterizing the full skirt parameter of umbrella skirt construction, described N is more than or equal to 2, and described M is more than or equal to 1；
Field intensity acquisition module, is used for for the phantom with the value often organizing described full skirt parameter, at this phantom
Full skirt on add moisture film, and emulate adding the phantom after moisture film, to obtain a air gap in this full skirt
Average field-strength；
Full skirt parameter selecting module, for the average field-strength of the same the air gap according to N number of phantom, from described N
The value of group full skirt parameter is determined the preferred value of M described full skirt parameter.
Optionally, the full skirt of described support insulator at least includes arranging successively the first gamp, umbellule, the second gamp；
Often organize described full skirt parameter include described first gamp stretch out parameter, described first gamp and described umbellule stretch out poor and
Described first gamp and the umbrella spacing of described second gamp.
Optionally, full skirt parameter acquisition module takes specifically for S that obtains each full skirt parameter in M full skirt parameter
Value, in described M full skirt parameter, S value of each full skirt parameter includes: described first gamp stretch out parameter S value,
Described first gamp stretches out S poor value and described first gamp and the umbrella spacing of described second gamp with described umbellule
S value, described S be more than or equal to 2；And for S value of each full skirt parameter in described M full skirt parameter, by just
Test table is handed over to obtain the value of N group full skirt parameter.
The method and device of a kind of full skirt parameter determining support insulator that the embodiment of the present invention provides, imitative owing to using
True means carry out the optimization of full skirt parameter, thus reduce research cost, and also the Selection and Design for external insulation provides early stage
Theories integration.
Accompanying drawing explanation
In order to be illustrated more clearly that the technical scheme of the embodiment of the present invention, below will be in embodiment or description of the prior art
The required accompanying drawing used is briefly described, it should be apparent that, the accompanying drawing in describing below is only some realities of the present invention
Execute example, for those of ordinary skill in the art, on the premise of not paying creative work, it is also possible to according to these accompanying drawings
Obtain other accompanying drawing.
The flow chart of the method for a kind of full skirt parameter determining support insulator that Fig. 1 provides for the embodiment of the present invention；
The support insulator structural representation that Fig. 2 provides for the embodiment of the present invention；
The modeling schematic diagram that Fig. 3 provides for the embodiment of the present invention；
The umbrella skirt construction schematic diagram treating moisture film that Fig. 4 provides for the embodiment of the present invention；
The block diagram of the device of a kind of full skirt parameter determining support insulator that Fig. 5 provides for the embodiment of the present invention.
Detailed description of the invention
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Describe, it is clear that described embodiment is only a part of embodiment of the present invention rather than whole embodiments wholely.Based on
Embodiment in the present invention, it is every other that those of ordinary skill in the art are obtained under not making creative work premise
Embodiment, broadly falls into the scope of protection of the invention.
Term "and/or" in the embodiment of the present invention, a kind of incidence relation describing affiliated partner, expression can be deposited
In three kinds of relations, such as, A and/or B, can represent: individualism A, there is A and B, individualism B these three situation simultaneously.
It addition, character "/" in the embodiment of the present invention, typically represent the forward-backward correlation relation to liking a kind of "or".
For the ease of clearly describing the technical scheme of the embodiment of the present invention, in an embodiment of the present invention, have employed " the
One ", the printed words such as " second " to function with act on essentially identical identical entry or similar item makes a distinction, those skilled in the art can
To understand that quantity and execution order are not defined by the printed words such as " first ", " second ".
Embodiment one
A kind of method embodiments providing full skirt parameter determining support insulator, the executive agent of the method
Can determine that the device of the full skirt parameter of support insulator, this device can be software, and such as this software may include that limited
Unit simulation software ANSYS etc., it is also possible to be hardware, such as can be with a certain in computer equipment or computer equipment or some is hard
Part module.
As it is shown in figure 1, the method may comprise steps of:
S101, obtain the structural parameters of support insulator, and structural parameters based on this support insulator set up this pillar
The phantom of insulator, and set up air field so that this phantom is in air field.
Support insulator can only have a joint, it is also possible to is that more piece is formed by connecting.As in figure 2 it is shown, support insulator is main
Being made up of plug, full skirt, its structural parameters include plug parameter and full skirt parameter.Wherein, plug parameter may include that plug is straight
Footpath, plug height.Full skirt parameter includes: full skirt top rade θ, full skirt angle of declination α, if full skirt includes at least one big umbellule list
Unit, a big umbellule unit includes a gamp and a umbellule, then full skirt parameter can also include: gamp stretches out parameter P1、
Big umbellule stretches out poor P2.Further, if full skirt includes multiple (at least two) big umbellule unit, then full skirt parameter can also be wrapped
Include: umbrella spacing P between adjacent gamp3。
The most in this step, optionally, emulation mould can be set up according to the structural parameters that a support insulator is actual
Type, example, the embodiment of the present invention be with cloud wide ± composite post insulator (5 that puts into operation of 800kV extra-high voltage direct-current transmission engineering
Save short string series connection) structural parameters set up full-scale phantom, it is also possible to just for therein one joint set up phantom.
In this example, as a example by setting up full-scale phantom, now, subsequent step can be studied only for wherein one joint,
Such as owing to substantially concentrating on the first segment insulator of high-pressure side along high field area, face, therefore can be for being positioned at the of high-pressure side
One joint insulator determines its Electric Field Distribution according to subsequent step.
It should be noted that due in subsequent step, the P of phantom1、P2、P3Also can change, thus, in this step
Acquired structural parameters can not include these parameters (P1、P2、P3), such as: when modeling, these parameters can be write from memory
Recognize and be set to 0, or arbitrary value.
Optionally, with reference to Fig. 2, the full skirt of the present embodiment B-C post insulator at least includes the first gamp arranged successively
11, umbellule the 12, second gamp 13.
With reference to the modeling schematic diagram shown in Fig. 3, this step can be that finite element emulation software ANSYS is according to above-mentioned pillar
The structural parameters of insulator establish the phantom of support insulator, and set up air field so that this phantom is in air
In Chang.For example, it is possible to reference to Fig. 3, in the side of support insulator, set up a semicircle region representation air field.
Further, in order to closer to the environment residing for actual support insulator, this step also may be used in the present embodiment
To include: set up far field unit in the outside of air field.Example, with reference to Fig. 3, represent in the semi-annular areas of air side outside the venue
Far field unit.In fact to set up area also possible much larger than the electric field unit of air field the outside in air field, but due to
When utilizing finite element model for solving Electric Field Distribution, the necessary bounded in domain, and electric field region is unbalanced field, therefore in the present embodiment
Far field unit is added when preferably setting up phantom.
S102, obtaining the value of N group full skirt parameter of support insulator, often group full skirt parameter includes that M is individual for characterizing full skirt
The full skirt parameter of structure, described N is more than or equal to 2, and described M is more than or equal to 1.
If M is 1, then in the present embodiment only using this full skirt parameter as object of study, constant at other structural parameters
In the case of, choose the preferred value of this full skirt parameter.
If M is more than or equal to 2, then in the present embodiment using multiple full skirt parameters as object of study, at other structural parameters
In the case of constant, choose the preferred value of these multiple full skirt parameters.At this point it is possible to simultaneously take account of the friendship of multiple full skirt parameter
Impact mutually.
Preferably, as in figure 2 it is shown, often organize full skirt parameter to include 3 full skirt parameters, particularly as follows: the first gamp stretches out parameter
P1, the first gamp and described umbellule stretch out poor P2, and the first gamp and umbrella spacing P of described second gamp3。
Based on this preferred version, this step may include that
(1) S value of each full skirt parameter in M full skirt parameter is obtained, each full skirt ginseng in described M full skirt parameter
S value of number includes: described first gamp stretches out S value of parameter, described first gamp stretches out difference with described umbellule
S value and S the value of umbrella spacing of described first gamp and described second gamp, described S is more than or equal to 2.
Example, the present embodiment obtains 3 values of each full skirt parameter in 3 full skirt parameters, as shown in table 1, these are 3 years old
In individual full skirt parameter, 3 values of each full skirt parameter include: P13 values, P23 values and P33 values.
Table 1
| Number of levels | P1(mm) | P2(mm) | P3(mm) |
| 1 | 66 | 16 | 105 |
| 2 | 72 | 20 | 108 |
| 3 | 78 | 25 | 115 |
(2) for S value of full skirt parameter each in M full skirt parameter, N group full skirt parameter is obtained by orthogonal test table
Value.
Example, for 3 values of full skirt parameter each in 3 full skirt parameters in the present embodiment, by L9 (33) orthogonal
Test table obtains the value of 9 groups of (9 tested numbers in corresponding table 2) full skirt parameters.Wherein, L9 (33) orthogonal test table such as table 2 institute
Show:
Table 2 orthogonal test table
If not using orthogonal experiment, then can obtain 27 combinations according to table 1, if each combination to be carried out emulation examination
Testing, the time shared by whole method that inevitably results in lengthens.9 can be only chosen owing to the present embodiment have employed orthogonal experiment
Individual combination, such that it is able to reduce the follow-up test number (TN) carrying out and emulating such that it is able to saves execution the present embodiment method and is used
Time.
S103, for having the phantom of value of often group full skirt parameter, the full skirt of this phantom adds moisture film,
And the phantom after adding moisture film is emulated, to obtain the average field-strength of a air gap in this full skirt.
Example, according to the value of 9 groups of full skirt parameters of gained in table 2, initially can imitate what step S101 was set up respectively
9 composite post insulator models are obtained on the basis of true mode.With reference to Fig. 4, adding uniform thickness on full skirt surface is 1mm's
Moisture film, simulation is drenched with rain state, emulates 9 the insulator models set up, and obtains simulation result (namely the electric field of insulator
Distribution).Further, the air gap average field-strength being calculated between full skirt according to simulation result, specifically, can ask for
The electric field integration to path, the air gap, then ask for the ratio of integrated value and the air gap size, i.e. obtain the air gap
Average field-strength.Concrete algorithm is referred to the computing formula of average field-strength in prior art, is not added with at this repeating.
Between full skirt, the air gap is chosen and is seen accompanying drawing 4, and wherein, L1 represents the umbellule of the first gamp 11 edge cascade and band moisture film
The air gap between 12 edges, L2 represents between the air between umbellule 12 edge cascade and the second gamp 13 edge of band moisture film
Gap, L3 represents the air gap between the first gamp 11 edge cascade and the second gamp 13 edge of band moisture film.
Example, this step can obtain through emulation the average field-strength of L1, L2 and L3, more arbitrarily choose one
The average field-strength of individual the air gap (L1, L2 or L3) is applied to subsequent step.It is of course also possible to only obtain wherein one through emulation
The average field-strength of individual the air gap, and this value is applied to subsequent step.Preferably, the present embodiment is by the average field-strength E of L3i
(i is the tested number in table 2 orthogonal test table, EiRepresent the average field-strength of L3 in the phantom corresponding to tested number i) application
In subsequent step, to determine the preferred value of 3 full skirt parameters in subsequent step.
S104, average field-strength (E according to the same the air gap of N number of phantom1～EN), from this N group full skirt parameter
Value is determined the preferred value of M full skirt parameter.
Preferably, the present embodiment is the average field-strength (E of the L3 according to 9 phantoms1～E9), from these 9 groups of full skirt parameters
Value in determine P1、P2、P3Preferred value.
Preferably, this step may include that
(1) for S (such as S is 3) the individual value of each full skirt parameter, the fiducial value of each value, each value are obtained
The meansigma methods of average field-strength of each phantom corresponding to this value that fiducial value is this full skirt parameter, can joining of example
Examine table 3.
Table 3
| P1 | P2 | P3 | |
| Fiducial value | W1 | Q1 | T1 |
| Fiducial value | W2 | Q2 | T2 |
| Fiducial value | W3 | Q3 | T3 |
Wherein, in conjunction with table 1, P1The value of number of levels 1 be 66mm, the fiducial value of this value is designated as W1, the like,
To P1The fiducial value W of other values2、W3。P2The value of number of levels 1 be 16mm, the fiducial value of this value is designated as Q1, successively
Analogize, obtain P1The fiducial value Q of other values2、Q3。P3The value of number of levels 1 be 105mm, the fiducial value note of this value
For T1, the like, obtain P1The fiducial value T of other values2、T3。
Example, in the present embodiment, such as, obtain P13 fiducial value W1、W2、W3, Wherein, K1Represent P1Number of levels 1 corresponding to each put down
All field intensity sums, in like manner, K2、K3Represent P respectively1Number of levels 2, each average field-strength sum corresponding to number of levels 3.k1、k2、
k3Represent P respectively1The number of times that occurs in the value of 9 groups of full skirt parameters of the value of same level number.
In like manner, P is obtained23 fiducial value Q1、Q2、Q3: Wherein, K1Represent P2Each average field-strength sum corresponding to number of levels 1, in like manner, K2、K3
Represent P respectively2Number of levels 2, each average field-strength sum corresponding to number of levels 3.k1、k2、k3Represent P respectively2Same water
The number of times that the value of flat number occurs in the value of 9 groups of full skirt parameters.
Same, obtain P33 fiducial value T1、T2、T3: Wherein, K1Represent P3Each average field-strength sum corresponding to number of levels 1, in like manner, K2、K3
Represent P respectively3Number of levels 2, each average field-strength sum corresponding to number of levels 3.k1、k2、k3Represent P respectively3Same water
The number of times that the value of flat number occurs in the value of 9 groups of full skirt parameters.
(2) minimum fiducial value in 3 fiducial values of each full skirt parameter is determined.
Example, in the present embodiment, P1、P2、P3The computing formula of minimum fiducial value be respectively as follows: G1=min{W1,W2,
W3}、G2=min{Q1,Q2,Q3}、G3=min{T1,T2,T3}。
(3) value of full skirt parameter that described minimum fiducial value is corresponding is determined, as the preferred value of this full skirt parameter.
Example, if P1Minimum fiducial value be W2, then this P1Preferred value be P1The 2nd corresponding the taking of number of levels
Value 72mm.If P2Minimum fiducial value be Q1, then this P2Preferred value be P2Value 16mm corresponding to the 1st number of levels.As
Really P3Minimum fiducial value be T3, then this P3Preferred value be P3Value 115mm corresponding to the 3rd number of levels.
The method of a kind of full skirt parameter determining support insulator that the embodiment of the present invention provides, owing to using simulation means
Carry out the optimization of full skirt parameter, thus reduce research cost, also provide early stage theory for the Selection and Design of external insulation and prop up
Hold.
Further alternative, as it is shown in figure 1, the embodiment of the present invention can also comprise the following steps:
S105, calculating the extreme difference of each full skirt parameter, the extreme difference of this full skirt parameter is S fiducial value of this full skirt parameter
In, maximum fiducial value and the difference of minimum fiducial value.
It should be noted that this step can perform after the step (1) of above-mentioned S104.
Example, in the present embodiment, P1、P2、P3Calculate extreme difference formula be respectively as follows:
R1=max{W1, W2, W3}-min{W1, W2, W3}
R2=max{Q1, Q2, Q3}-min{Q1, Q2, Q3}
R3=max{T1, T2, T3}-min{T1, T2, T3}
Further, P is compared1、P2、P3Extreme difference R1、R2、R3Size, the extreme difference of which full skirt parameter is big, indicates that
This full skirt parameter is big on the impact of support insulator Electric Field Distribution, i.e. the impact on the resistance to Flashover Characteristics of this support insulator is big.
Can further preferred value and extreme difference according to each full skirt parameter this preferred value to be finely adjusted.
Further alternative, as it is shown in figure 1, the method for the embodiment of the present invention can also include:
S105 ', S value for each full skirt parameter, after obtaining the fiducial value of each value, calculate each full skirt
The variance of S fiducial value of parameter.
It should be noted that this step can perform after the step (1) of above-mentioned S104.
First, the meansigma methods of N number of average field-strength is obtainedComputing formula isSecondly, P1、P2、P3Calculating
The formula of variance is respectively as follows:
Wherein f1For P1Value number (S), it is also possible to
Being S-1, preferably taking S-1, S in the present embodiment is 3；k1、k2、k3Represent P respectively1The value of same level number at 9 groups of full skirts
The number of times occurred in the value of parameter, the present embodiment is 3.
Wherein f2For P2Value number (S), it is possible to
To be S-1, preferably taking S-1, S in the present embodiment is 3；k1、k2、k3Represent P respectively2The value of same level number at 9 groups of umbrellas
The number of times occurred in the value of skirt parameter, the present embodiment is 3.
Wherein f3For P3Value number (S), it is also possible to
Being S-1, preferably taking S-1, S in the present embodiment is 3；k1、k2、k3Represent P respectively3The value of same level number at 9 groups of full skirts
The number of times occurred in the value of parameter, the present embodiment is 3.
Further, P is being obtained1、P2、P3Variance V1、V2、V3Afterwards, F-distribution numerical tabular can be inquired about and obtain correspondence
Significance (sig), thus carry out significance test.Relatively P1、P2、P3Sig, the sig of which full skirt parameter big, indicate that
This full skirt parameter is big on the impact of support insulator Electric Field Distribution, i.e. the impact on the resistance to Flashover Characteristics of this support insulator is big.
Embodiment two
Embodiments providing the device of a kind of full skirt parameter determining support insulator, this device can be software
Or hardware, wherein the realization of each functional module is referred to above-described embodiment, does not repeats them here.As it is shown in figure 5, this device
Including:
MBM 51, for obtaining the structural parameters of support insulator, and structure based on described support insulator ginseng
Number sets up the phantom of described support insulator, and sets up air field so that described phantom is in air field；
Full skirt parameter acquisition module 52, for obtaining the value of the N group full skirt parameter of described support insulator, often organizes described umbrella
Skirt parameter includes M, and for characterizing the full skirt parameter of umbrella skirt construction, described N is more than or equal to 2, and described M is more than or equal to 1；
Field intensity acquisition module 53, is used for for the phantom with the value often organizing described full skirt parameter, at this emulation mould
Add moisture film on the full skirt of type, and emulate adding the phantom after moisture film, to obtain in this full skirt between an air
The average field-strength of gap；
Full skirt parameter selecting module 54, for the average field-strength of the same the air gap according to N number of phantom, from described
The value of N group full skirt parameter is determined the preferred value of M described full skirt parameter.
Optionally, the full skirt of described support insulator at least includes arranging successively the first gamp, umbellule, the second gamp；
Often organize described full skirt parameter include described first gamp stretch out parameter, described first gamp and described umbellule stretch out poor and
Described first gamp and the umbrella spacing of described second gamp.
Optionally, full skirt parameter acquisition module 52 takes specifically for S that obtains each full skirt parameter in M full skirt parameter
Value, in described M full skirt parameter, S value of each full skirt parameter includes: described first gamp stretch out parameter S value,
Described first gamp stretches out S poor value and described first gamp and the umbrella spacing of described second gamp with described umbellule
S value, described S be more than or equal to 2；And for S value of each full skirt parameter in described M full skirt parameter, by just
Test table is handed over to obtain the value of N group full skirt parameter.
Optionally, full skirt parameter selecting module 54, specifically for S the value for each full skirt parameter, obtains each taking
The fiducial value of value, the fiducial value of described each value is the mean field of each phantom corresponding to this value of this full skirt parameter
Strong meansigma methods；Determine minimum fiducial value in S fiducial value of described full skirt parameter；Determine the umbrella that described minimum fiducial value is corresponding
The value of skirt parameter, as the preferred value of this full skirt parameter.
Optionally, this device can also include: calculates extreme difference unit 55, calculates extreme difference unit 55 and is used for calculating each full skirt
The extreme difference of parameter, in S the fiducial value that extreme difference is this full skirt parameter of described full skirt parameter, maximum fiducial value and minimum fiducial value
Difference.
Optionally, this device can also include: calculates variance unit 56, calculates variance unit 56 specifically at described pin
S the value to each full skirt parameter, after obtaining the fiducial value of each value, calculates S fiducial value of each full skirt parameter
Variance.
Optionally, MBM 51 can be also used for setting up far field unit in the outside of described air field.
The device of a kind of full skirt parameter determining support insulator that the embodiment of the present invention provides, owing to using simulation means
Carry out the optimization of full skirt parameter, thus reduce research cost, also provide early stage theory for the Selection and Design of external insulation and prop up
Hold.
In several embodiments provided herein, it should be understood that disclosed system, apparatus and method are permissible
Realize by another way.Such as, device embodiment described above is only schematically, such as, and described unit
Dividing, be only a kind of logic function and divide, actual can have other dividing mode, the most multiple unit or assembly when realizing
Can in conjunction with or be desirably integrated into another system, or some features can be ignored, or does not performs.Another point, shown or
The coupling each other discussed or direct-coupling or communication connection can be the indirect couplings by some interfaces, device or unit
Close or communication connection, can be electrical, machinery or other form.
The described unit illustrated as separating component can be or may not be physically separate, shows as unit
The parts shown can be or may not be physical location, i.e. may be located at a place, or can also be distributed to multiple
On NE.Some or all of unit therein can be selected according to the actual needs to realize the mesh of the present embodiment scheme
's.
It addition, each functional unit in each embodiment of the present invention can be integrated in a processing unit, it is also possible to
It is that the independent physics of unit includes, it is also possible to two or more unit are integrated in a unit.Above-mentioned integrated list
Unit both can realize to use the form of hardware, it would however also be possible to employ hardware adds the form of SFU software functional unit and realizes.
The above-mentioned integrated unit realized with the form of SFU software functional unit, can be stored in an embodied on computer readable and deposit
In storage media.Above-mentioned SFU software functional unit is stored in a storage medium, including some instructions with so that a computer
Equipment (can be personal computer, server, or the network equipment etc.) performs the portion of method described in each embodiment of the present invention
Step by step.And aforesaid storage medium includes: (Read-Only Memory is called for short for USB flash disk, portable hard drive, read only memory
ROM), random access memory (Random Access Memory is called for short RAM), magnetic disc or CD etc. are various can store
The medium of program code.
Last it is noted that above example is only in order to illustrate technical scheme, it is not intended to limit；Although
With reference to previous embodiment, the present invention is described in detail, it will be understood by those within the art that: it still may be used
So that the technical scheme described in foregoing embodiments to be modified, or wherein portion of techniques feature is carried out equivalent；
And these amendment or replace, do not make appropriate technical solution essence depart from various embodiments of the present invention technical scheme spirit and
Scope.
Claims (10)
1. the method for the full skirt parameter determining support insulator, it is characterised in that including:
Obtain the structural parameters of support insulator, and structural parameters based on described support insulator set up described support insulator
Phantom, and set up air field so that described phantom is in air field；
Obtain the value of the N group full skirt parameter of described support insulator, often organize described full skirt parameter and include M for characterizing full skirt knot
The full skirt parameter of structure, described N is more than or equal to 2, and described M is more than or equal to 1；
For having the phantom of the value often organizing described full skirt parameter, the full skirt of this phantom adds moisture film, and right
Add the phantom after moisture film to emulate, to obtain the average field-strength of a air gap in this full skirt；
The average field-strength of the same the air gap according to N number of phantom, determines M from the value of described N group full skirt parameter
The preferred value of described full skirt parameter.
Method the most according to claim 1, it is characterised in that the full skirt of described support insulator at least includes arranging successively
The first gamp, umbellule, the second gamp；Often organize described full skirt parameter and include that described first gamp stretches out parameter, described first big
Umbrella stretches out poor and described first gamp and the umbrella spacing of described second gamp with described umbellule.
Method the most according to claim 2, it is characterised in that the value of described acquisition N group full skirt parameter includes:
Obtaining S value of each full skirt parameter in M full skirt parameter, in described M full skirt parameter, the S of each full skirt parameter is individual
Value includes: described first gamp stretches out S value of parameter, the stretching out poor S and take of described first gamp and described umbellule
S value of the umbrella spacing of value and described first gamp and described second gamp, described S is more than or equal to 2；
For S value of each full skirt parameter in described M full skirt parameter, obtain N group full skirt parameter by orthogonal test table
Value.
Method the most according to claim 3, it is characterised in that the described same the air gap according to N number of phantom
Average field-strength, determines that from the value of described N group full skirt parameter the preferred value of M described full skirt parameter includes:
For S value of each full skirt parameter, obtaining the fiducial value of each value, the fiducial value of described each value is this umbrella
The meansigma methods of the average field-strength of each phantom that this value of skirt parameter is corresponding；
Determine minimum fiducial value in S fiducial value of described full skirt parameter；
Determine the value of the full skirt parameter that described minimum fiducial value is corresponding, as the preferred value of this full skirt parameter.
Method the most according to claim 4, it is characterised in that in described S the value for each full skirt parameter, obtains
Also include after the fiducial value of each value:
Calculate the extreme difference of each full skirt parameter, in S the fiducial value that extreme difference is this full skirt parameter of described full skirt parameter, high specific
Relatively value and the difference of minimum fiducial value.
Method the most according to claim 4, it is characterised in that in described S the value for each full skirt parameter, obtains
Also include after the fiducial value of each value:
Calculate the variance of S fiducial value of each full skirt parameter.
7. according to the method described in any one of claim 1-6, it is characterised in that described method also includes: in described air field
Outside set up far field unit.
8. the device of the full skirt parameter determining support insulator, it is characterised in that including:
MBM, for obtaining the structural parameters of support insulator, and structural parameters based on described support insulator are set up
The phantom of described support insulator, and set up air field so that described phantom is in air field；
Full skirt parameter acquisition module, for obtaining the value of the N group full skirt parameter of described support insulator, often organizes described full skirt parameter
Including M for characterizing the full skirt parameter of umbrella skirt construction, described N is more than or equal to 2, and described M is more than or equal to 1；
Field intensity acquisition module, is used for for the phantom with the value often organizing described full skirt parameter, at the umbrella of this phantom
Add moisture film on skirt, and emulate adding the phantom after moisture film, to obtain the flat of a air gap in this full skirt
All field intensity；
Full skirt parameter selecting module, for the average field-strength of the same the air gap according to N number of phantom, from described N group umbrella
The value of skirt parameter is determined the preferred value of M described full skirt parameter.
Device the most according to claim 8, it is characterised in that the full skirt of described support insulator at least includes arranging successively
The first gamp, umbellule, the second gamp；Often organize described full skirt parameter and include that described first gamp stretches out parameter, described first big
Umbrella stretches out poor and described first gamp and the umbrella spacing of described second gamp with described umbellule.
Method the most according to claim 9, it is characterised in that full skirt parameter acquisition module is specifically for obtaining M full skirt
S value of each full skirt parameter in parameter, in described M full skirt parameter, S value of each full skirt parameter includes: described
One gamp stretch out S value of parameter, described first gamp and described umbellule stretch out S poor value and described first big
S value of the umbrella spacing of umbrella and described second gamp, described S is more than or equal to 2；And for every in described M full skirt parameter
S value of individual full skirt parameter, is obtained the value of N group full skirt parameter by orthogonal test table.
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