CN105908180A - Preparation device of terahertz absorption layer and preparation method - Google Patents
Preparation device of terahertz absorption layer and preparation method Download PDFInfo
- Publication number
- CN105908180A CN105908180A CN201610347374.XA CN201610347374A CN105908180A CN 105908180 A CN105908180 A CN 105908180A CN 201610347374 A CN201610347374 A CN 201610347374A CN 105908180 A CN105908180 A CN 105908180A
- Authority
- CN
- China
- Prior art keywords
- absorbed layer
- microsyringe
- terahertz
- voltage power
- power supply
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C24/00—Coating starting from inorganic powder
- C23C24/02—Coating starting from inorganic powder by application of pressure only
- C23C24/04—Impact or kinetic deposition of particles
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Infusion, Injection, And Reservoir Apparatuses (AREA)
Abstract
The invention discloses a preparation device of a terahertz absorption layer and a preparation method. The preparation device of the terahertz absorption layer comprises a high-voltage power supply, a micro sample feeder, a micro injection pump and a metal collecting plate; a positive pole of the high-voltage power supply is connected with a positive pole of a needle of the micro sample feeder, and a negative pole is connected with the metal collecting plate; a few amount of prepared carbon nanotube solution is injected in the micro sample feeder; the size of droplets on the needle of the micro sample feeder is controlled by the micro sample feeder; and by using an electric spraying principle, the carbon nanotube solution on the needle of the micro sample feeder is formed to aerosol under the effect of high-voltage electric field to uniformly deposit on a terahertz detector sensitive element plated with a metal electrode. The preparation device has the following beneficial effects: the manufactured terahertz absorption layer is enough uniform and compact, is excellent in adhesiveness, high in absorptivity, controllable in thickness and not easy to age and fall, and preferably satisfies the requirements of a terahertz detector absorption layer.
Description
Technical field
The present invention relates to the preparation technology field of Terahertz absorbed layer, a kind of electron spray prepares carbon
The method of nanotube CNT absorbed layer.
Background technology
Terahertz detection technology from generation, the most just by the military of various countries great attention terahertz detector in recent years
Militarily obtain quick development, be especially widely used in human lives's intelligence at aerospace field
Changing and also have huge potentiality in the development of Wearable device, the monitoring to surrounding environment change, on airport or important
The civilian aspects such as the safety inspection medical science human body imaging circumstances monitoring fabric construction research geologic prospect archaeology of occasion also have
There is great scientific value
For the development and application of terahertz detector, one of most important condition is the detection of terahertz signal but terahertz
Hereby photon energy is the lowest, and it is the faintest for inciding the terahertz emission on detector, in order to just improve the responsiveness of device
The absorption to terahertz emission of the detector sensitivity unit must be increased, the most just require to do one in terahertz detector sensitivity unit
The layer preferable absorbed layer of Terahertz absorbed layer not only to have higher absorbance to improve the sound of detector to terahertz emission
Should rate, and require that absorbed layer adhesiveness is good, also to have the thermal conductance that relatively low thermal capacitance is higher obtain faster the speed of response this
Just require that Terahertz absorbed layer wants enough even compacts and more Bao Yuehao.
Although the black resins such as the most conventional Terahertz absorbing material organic black matrix dark fund and Ni-Cr have reflection
The low advantage of rate but its thin film is thicker, thermal capacitance is big, although and the Summoning absorbed layer generally reported is to terahertz emission
There is higher absorbance, but its complicated process of preparation and the most aging such as China's utility model that comes off of tack difference are special
Profit 201110332644.7 discloses a kind of nuclear track porous surface and prepares what method the method for silver-colored black nano-particle was prepared
The cellular black film absorption layer of silver has the highest absorbance really to Terahertz, but its technique is the most complicated, and manufacturing cycle is the longest,
Yield rate relatively low and also this silver-colored black thin film is the most aging comes off;E.Theocharous et al. use laser evaporization method be prepared for based on
The infrared absorption layer of CNT, but its preparation process is complex, and absorbed layer thin film tack is very poor, and thickness is difficult to
Control the most how to prepare in terahertz detector sensitivity unit the good dense uniform of tack and the high Terahertz of absorbance is inhaled
Receiving layer is problem demanding prompt solution.
Summary of the invention
The present invention provides preparation facilities and the preparation method of a kind of Terahertz absorbed layer, and it utilizes the system of Terahertz absorbed layer
Standby device uses CNT Terahertz absorbed layer not only enough even compacts prepared by the method for electron spray, and tack is non-
Chang Hao, absorbance is high, and thickness is controlled, is difficult to aging coming off, well meets the requirement of terahertz detector absorbed layer
For solving above-mentioned technical problem, the present invention by the following technical solutions:
The preparation facilities of a kind of Terahertz absorbed layer, it includes high voltage power supply microsyringe micro-injection pump and metal collection
Plate, described microsyringe is arranged on micro-injection pump, and the positive pole of described high voltage power supply is connected with the syringe needle of microsyringe,
The negative pole of high voltage power supply is connected with metal collection plate
The method that the preparation facilities of a kind of Terahertz absorbed layer prepares Terahertz absorbed layer, step is as follows:
(1) carbon nano-tube solution prepared is sucked in microsyringe, and microsyringe is placed in micro-injection pump
In;
(2) then micro-injection pump fixing device is fixed, and adjust syringe needle and the metal collection plate of microsyringe
Distance;
(3) then the syringe needle of high-voltage power cathode outfan with microsyringe is connected, high voltage power supply cathode output end and gold
Belong to collecting board to connect;
(4) then sensitive unit wafer to be sprayed is placed on metal collection plate;
(5) then beating the on and off switch of high voltage power supply, the voltage of regulation high voltage power supply reaches the voltage needed for electron spray;
(6) then opening micro-injection pump on and off switch, the motive force of regulation micro-injection pump makes to export microsyringe
The drop uniform, controllable of syringe needle;
(7) finally the sensitive unit wafer of the CNT absorbed layer sprayed is put into baking in baking oven
Further, the capacity of the microsyringe in described step (1) is 10-25ul, the suction volume of carbon nano-tube solution
For 4-6ul, the mass percent concentration of described carbon nano-tube solution is 5%-10%
Further, the syringe needle of microsyringe in described step (2) and the distance of metal collection plate are 3-5cm
Further, in described step (4), adjust the position of sensitive unit to be sprayed wafer so that the pin of microsyringe
The centre being projected in sensitive unit to be sprayed wafer of head
Further, the voltage of described step (5) mesohigh power supply is at 5000-20000V, and electric current is at 1-20uA
Further, described step (6) drop controls as 2-3uL/min from the syringe needle rate of outflow
Further, in described step (7), baking temperature is 120-150 DEG C, and the time is 20-30min
Compared with prior art, the invention has the beneficial effects as follows: the preparation facilities of Terahertz absorbed layer of the present invention is mainly by high pressure
Power supply microsyringe micro-injection pump and metal collection plate composition are by the positive pole of high voltage power supply and microsyringe syringe needle
Positive pole is connected, and negative pole is connected with metal collection plate, injects the carbon nano-tube solution prepared on a small quantity micro-in microsyringe
On amount injector syringe needle, the size of drop is by microsyringe control, utilizes electron spray principle, the carbon on microsyringe syringe needle
It is sensitive at the terahertz detector having plated metal electrode that nanotube solution forms aerosol uniform deposition under high voltage electric field effect
On unit's wafer, the method is relative to the traditional method such as spot printing and gas blowout, electric field force suffered during mist droplet deposition during electron spray
Can the adhesiveness of reinforcing carbon nanotube and sensitivity unit wafer, the droplet simultaneously fully refined considerably increases CNT and absorbs
The uniformity of layer, improves the Terahertz absorbed layer of the making of the absorbance this method to Terahertz to 1T-20T terahertz wave band
Having well absorption, absorbance has reached more than 80%, and Terahertz frequency has not been had selectivity, and this well meets too
The requirement of hertz thermal detector.
Accompanying drawing explanation
With detailed description of the invention, the present invention is described in further detail below in conjunction with the accompanying drawings.
Fig. 1 is the preparation facilities structural representation of Terahertz absorbed layer of the present invention.
Fig. 2 is that to the absorption spectrum figure of THz wave, (vertical coordinate represents Terahertz to the Terahertz absorbed layer that makes of the present invention
The absorbance of ripple, abscissa represents the frequency of THz wave).
Being numbered in figure: 1 micro-injection pump;2 micro-injection pump on and off switch;3 micro-injection pump regulation drop streams
The knob of amount;4 micro-injection pump droplet flow display screens;5 microsyringes;The syringe needle of 6 microsyringes;7 carbon nanometers
Pipe solution;8 high voltage power supplies;The on and off switch of 9 high voltage power supplies;10 high-voltage power voltage size adjustment knobs;11 high-tension electricities
Source voltage and current display screen;12 high-voltage power cathode outfans;13 high voltage power supply cathode output ends;14 high voltage power supplies connect
Ground end;15 metal collection plates;16 sensitive unit wafers;Taylor cone formed in 17 electron spray processes.
Detailed description of the invention
The present invention is further illustrated below in conjunction with the accompanying drawings, and embodiments of the present invention include but not limited to following reality
Execute example.
[embodiment 1]
The preparation facilities of a kind of Terahertz absorbed layer as shown in Figure 1 and preparation method, the preparation of described Terahertz absorbed layer
Device, it includes high voltage power supply microsyringe micro-injection pump and metal collection plate, and described microsyringe is arranged on micro-
On amount syringe pump, the positive pole of described high voltage power supply is connected with the syringe needle of microsyringe, the negative pole of high voltage power supply and metal collection
Plate is connected.
The preparation facilities utilizing Terahertz absorbed layer prepares the method for Terahertz absorbed layer, and step is as follows:
(1) carbon nano-tube solution 7 prepared is sucked in microsyringe 5, and microsyringe 5 is placed in micro-injection
In pump 1, wherein the capacity of microsyringe 5 is 10ul, and the suction volume of carbon nano-tube solution 7 is 4ul, and described CNT is molten
The mass percentage concentration of liquid 7 is 5%;
(2) then micro-injection pump 1 is fixed by fixing device, and adjust syringe needle and the metal collection of microsyringe 5
The distance of plate 15 so that the syringe needle 6 of microsyringe is 3cm with the distance of metal collection plate 15;
(3) then the syringe needle 6 of high-voltage power cathode outfan 12 with microsyringe is connected, high voltage power supply cathode output end 13
Connect with metal collection plate 15;
(4) then sensitive unit wafer 16 to be sprayed is placed on metal collection plate 15 so that the throwing of the syringe needle 6 of microsyringe
Shadow is in the centre of sensitive unit to be sprayed wafer 16;
(5) then beating the on and off switch 9 of high voltage power supply, the voltage of regulation high voltage power supply 8 reaches the voltage needed for electron spray,
The voltage of high voltage power supply is at 5000V, and electric current is at 1uA;
(6) then opening micro-injection pump on and off switch 2, the motive force of regulation micro-injection pump 1 makes to export microsyringe
The drop uniform, controllable of syringe needle 6, control drop and control as 2uL/min from the syringe needle rate of outflow, it can be seen that droplet is at electricity
Substrate is flown under field force effect;
(7) finally the sensitive unit wafer 16 of the CNT absorbed layer sprayed being put into baking in baking oven, baking temperature is 120
DEG C, the time is 20min.
[embodiment 2]
The preparation facilities of a kind of Terahertz absorbed layer as shown in Figure 1 and preparation method, the preparation of described Terahertz absorbed layer
Device, it includes high voltage power supply microsyringe micro-injection pump and metal collection plate, and described microsyringe is arranged on micro-
On amount syringe pump, the positive pole of described high voltage power supply is connected with the syringe needle of microsyringe, the negative pole of high voltage power supply and metal collection
Plate is connected.
The preparation facilities utilizing Terahertz absorbed layer prepares the method for Terahertz absorbed layer, and step is as follows:
(1) carbon nano-tube solution 7 prepared is sucked in microsyringe 5, and microsyringe 5 is placed in micro-injection
In pump 1, wherein the capacity of microsyringe 5 is 25ul, and the suction volume of carbon nano-tube solution 7 is 6ul, and described CNT is molten
The mass percentage concentration of liquid 7 is 10%;
(2) then micro-injection pump 1 is fixed by fixing device, and adjust syringe needle and the metal collection of microsyringe 5
The distance of plate 15 so that the syringe needle 6 of microsyringe is 5cm with the distance of metal collection plate 15;
(3) then the syringe needle 6 of high-voltage power cathode outfan 12 with microsyringe is connected, high voltage power supply cathode output end 13
Connect with metal collection plate 15;
(4) then sensitive unit wafer 16 to be sprayed is placed on metal collection plate 15 so that the throwing of the syringe needle 6 of microsyringe
Shadow is in the centre of sensitive unit to be sprayed wafer 16;
(5) then beating the on and off switch 9 of high voltage power supply, the voltage of regulation high voltage power supply 8 reaches the voltage needed for electron spray,
The voltage of high voltage power supply is at 20000V, and electric current is at 20uA;
(6) then opening micro-injection pump on and off switch 2, the motive force of regulation micro-injection pump 1 makes to export microsyringe
The drop uniform, controllable of syringe needle 6, control drop and control as 3uL/min from the syringe needle rate of outflow, it can be seen that droplet is at electricity
Substrate is flown under field force effect;
(7) finally the sensitive unit wafer 16 of the CNT absorbed layer sprayed being put into baking in baking oven, baking temperature is 150
DEG C, the time is 30min.
[embodiment 3]
The preparation facilities of a kind of Terahertz absorbed layer as shown in Figure 1 and preparation method, the preparation of described Terahertz absorbed layer
Device, it includes high voltage power supply microsyringe micro-injection pump and metal collection plate, and described microsyringe is arranged on micro-
On amount syringe pump, the positive pole of described high voltage power supply is connected with the syringe needle of microsyringe, the negative pole of high voltage power supply and metal collection
Plate is connected
The preparation facilities utilizing Terahertz absorbed layer prepares the method for Terahertz absorbed layer, and step is as follows:
(1) carbon nano-tube solution 7 prepared is sucked in microsyringe 5, and microsyringe 5 is placed in micro-injection
In pump 1, wherein the capacity of microsyringe 5 is 17ul, and the suction volume of carbon nano-tube solution 7 is 5ul, and described CNT is molten
The mass percentage concentration of liquid 7 is 7.5%;
(2) then micro-injection pump 1 is fixed by fixing device, and adjust syringe needle and the metal collection of microsyringe 5
The distance of plate 15 so that the syringe needle 6 of microsyringe is 4cm with the distance of metal collection plate 15;
(3) then the syringe needle 6 of high-voltage power cathode outfan 12 with microsyringe is connected, high voltage power supply cathode output end 13
Connect with metal collection plate 15;
(4) then sensitive unit wafer 16 to be sprayed is placed on metal collection plate 15 so that the throwing of the syringe needle 6 of microsyringe
Shadow is in the centre of sensitive unit to be sprayed wafer 16;
(5) then beating the on and off switch 9 of high voltage power supply, the voltage of regulation high voltage power supply 8 reaches the voltage needed for electron spray,
The voltage of high voltage power supply is at 12500V, and electric current is at 10uA;
(6) then opening micro-injection pump on and off switch 2, the motive force of regulation micro-injection pump 1 makes to export microsyringe
The drop uniform, controllable of syringe needle 6, control drop and control as 2.5uL/min from the syringe needle rate of outflow, it can be seen that droplet exists
Substrate is flown under electric field force effect;
(7) finally the sensitive unit wafer 16 of the CNT absorbed layer sprayed being put into baking in baking oven, baking temperature is 135
DEG C, the time is 25min
[embodiment 4]
The preparation facilities of a kind of Terahertz absorbed layer as shown in Figure 1 and preparation method, the preparation of described Terahertz absorbed layer
Device, it includes high voltage power supply microsyringe micro-injection pump and metal collection plate, and described microsyringe is arranged on micro-
On amount syringe pump, the positive pole of described high voltage power supply is connected with the syringe needle of microsyringe, the negative pole of high voltage power supply and metal collection
Plate is connected
The preparation facilities utilizing Terahertz absorbed layer prepares the method for Terahertz absorbed layer, and step is as follows:
(1) carbon nano-tube solution 7 prepared is sucked in microsyringe 5, and microsyringe 5 is placed in micro-injection
In pump 1, wherein the capacity of microsyringe 5 is 11ul, and the suction volume of carbon nano-tube solution 7 is 4.2ul, described CNT
The mass percentage concentration of solution 7 is 5.5%;
(2) then micro-injection pump 1 is fixed by fixing device, and adjust syringe needle and the metal collection of microsyringe 5
The distance of plate 15 so that the syringe needle 6 of microsyringe is 3.1cm with the distance of metal collection plate 15;
(3) then the syringe needle 6 of high-voltage power cathode outfan 12 with microsyringe is connected, high voltage power supply cathode output end 13
Connect with metal collection plate 15;
(4) then sensitive unit wafer 16 to be sprayed is placed on metal collection plate 15 so that the throwing of the syringe needle 6 of microsyringe
Shadow is in the centre of sensitive unit to be sprayed wafer 16;
(5) then beating the on and off switch 9 of high voltage power supply, the voltage of regulation high voltage power supply 8 reaches the voltage needed for electron spray,
The voltage of high voltage power supply is at 6000V, and electric current is at 2uA;
(6) then opening micro-injection pump on and off switch 2, the motive force of regulation micro-injection pump 1 makes to export microsyringe
The drop uniform, controllable of syringe needle 6, control drop and control as 2.1uL/min from the syringe needle rate of outflow, it can be seen that droplet exists
Substrate is flown under electric field force effect;
(7) finally the sensitive unit wafer 16 of the CNT absorbed layer sprayed being put into baking in baking oven, baking temperature is 122
DEG C, the time is 21min
[embodiment 5]
The preparation facilities of a kind of Terahertz absorbed layer as shown in Figure 1 and preparation method, the preparation of described Terahertz absorbed layer
Device, it includes high voltage power supply microsyringe micro-injection pump and metal collection plate, and described microsyringe is arranged on micro-
On amount syringe pump, the positive pole of described high voltage power supply is connected with the syringe needle of microsyringe, the negative pole of high voltage power supply and metal collection
Plate is connected
The preparation facilities utilizing Terahertz absorbed layer prepares the method for Terahertz absorbed layer, and step is as follows:
(1) carbon nano-tube solution 7 prepared is sucked in microsyringe 5, and microsyringe 5 is placed in micro-injection
In pump 1, wherein the capacity of microsyringe 5 is 24ul, and the suction volume of carbon nano-tube solution 7 is 5.8ul, described CNT
The mass percentage concentration of solution 7 is 9%;
(2) then micro-injection pump 1 is fixed by fixing device, and adjust syringe needle and the metal collection of microsyringe 5
The distance of plate 15 so that the syringe needle 6 of microsyringe is 4.8cm with the distance of metal collection plate 15;
(3) then the syringe needle 6 of high-voltage power cathode outfan 12 with microsyringe is connected, high voltage power supply cathode output end 13
Connect with metal collection plate 15;
(4) then sensitive unit wafer 16 to be sprayed is placed on metal collection plate 15 so that the throwing of the syringe needle 6 of microsyringe
Shadow is in the centre of sensitive unit to be sprayed wafer 16;
(5) then beating the on and off switch 9 of high voltage power supply, the voltage of regulation high voltage power supply 8 reaches the voltage needed for electron spray,
The voltage of high voltage power supply is at 19000V, and electric current is at 9.5uA;
(6) then opening micro-injection pump on and off switch 2, the motive force of regulation micro-injection pump 1 makes to export microsyringe
The drop uniform, controllable of syringe needle 6, control drop and control as 2.9uL/min from the syringe needle rate of outflow, it can be seen that droplet exists
Substrate is flown under electric field force effect;
(7) finally the sensitive unit wafer 16 of the CNT absorbed layer sprayed being put into baking in baking oven, baking temperature is 148
DEG C, the time is 29min
Being the embodiments of the invention present invention as mentioned above and be not limited to above-mentioned embodiment, anyone should learn at this
The structure change made under the enlightenment of invention, every have same or like technical scheme with the present invention, each falls within the present invention
Protection domain within.
Claims (8)
1. the preparation facilities of a Terahertz absorbed layer, it is characterised in that: it includes that high voltage power supply, microsyringe, trace are noted
Penetrating pump and metal collection plate, described microsyringe is arranged on micro-injection pump, and the positive pole of described high voltage power supply enters with trace
The syringe needle of sample device is connected, and the negative pole of high voltage power supply is connected with metal collection plate.
2. utilize the method that the preparation facilities of the Terahertz absorbed layer described in claim 1 prepares Terahertz absorbed layer, its
It is characterised by: step is as follows:
(1) carbon nano-tube solution prepared is sucked in microsyringe, and microsyringe is placed in micro-injection pump
In；
(2) then micro-injection pump fixing device is fixed, and adjust syringe needle and the metal collection plate of microsyringe
Distance；
(3) then the syringe needle of high-voltage power cathode outfan with microsyringe is connected, high voltage power supply cathode output end and gold
Belong to collecting board to connect；
(4) then sensitive unit wafer to be sprayed is placed on metal collection plate；
(5) then beating the on and off switch of high voltage power supply, the voltage of regulation high voltage power supply reaches the voltage needed for electron spray；
(6) then opening micro-injection pump on and off switch, the motive force of regulation micro-injection pump makes to export microsyringe
The drop uniform, controllable of syringe needle；
(7) finally the sensitive unit wafer of the CNT absorbed layer sprayed is put into baking in baking oven.
A kind of preparation facilities utilizing Terahertz absorbed layer the most according to claim 2 prepares the side of Terahertz absorbed layer
Method, it is characterised in that: the capacity of the microsyringe in described step (1) is 10-25ul, and the suction volume of carbon nano-tube solution is
4-6ul, the mass percentage concentration of described carbon nano-tube solution is 5%-10%.
A kind of preparation facilities utilizing Terahertz absorbed layer the most according to claim 2 prepares the side of Terahertz absorbed layer
Method, it is characterised in that: the syringe needle of the microsyringe in described step (2) and the distance of metal collection plate are 3-5cm.
A kind of preparation facilities utilizing Terahertz absorbed layer the most according to claim 2 prepares the side of Terahertz absorbed layer
Method, it is characterised in that: in described step (4), adjust the position of sensitive unit to be sprayed wafer so that the syringe needle of microsyringe
The centre being projected in sensitive unit to be sprayed wafer.
A kind of preparation facilities utilizing Terahertz absorbed layer the most according to claim 2 prepares the side of Terahertz absorbed layer
Method, it is characterised in that: the voltage of described step (5) mesohigh power supply is 5000-20000V, and electric current is 1-20uA.
A kind of preparation facilities utilizing Terahertz absorbed layer the most according to claim 2 prepares the side of Terahertz absorbed layer
Method, it is characterised in that: described step (6) drop controls as 2-3uL/min from the syringe needle rate of outflow.
A kind of preparation facilities utilizing Terahertz absorbed layer the most according to claim 2 prepares the side of Terahertz absorbed layer
Method, it is characterised in that: in described step (7), baking temperature is 120-150 DEG C, and the time is 20-30min.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610347374.XA CN105908180A (en) | 2016-05-23 | 2016-05-23 | Preparation device of terahertz absorption layer and preparation method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610347374.XA CN105908180A (en) | 2016-05-23 | 2016-05-23 | Preparation device of terahertz absorption layer and preparation method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105908180A true CN105908180A (en) | 2016-08-31 |
Family
ID=56741445
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610347374.XA Pending CN105908180A (en) | 2016-05-23 | 2016-05-23 | Preparation device of terahertz absorption layer and preparation method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105908180A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106832766A (en) * | 2016-12-19 | 2017-06-13 | 西北大学 | Array carbon nano tube polymer composites, preparation method and applications |
| CN108728846A (en) * | 2017-04-21 | 2018-11-02 | 中国航发商用航空发动机有限责任公司 | The thermal protection coating preparation facilities and thermal protection coating preparation method of hot-end component |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103489943A (en) * | 2013-10-16 | 2014-01-01 | 电子科技大学 | Terahertz absorption layer of carbon nano tube and metamaterial composite structure and preparation method of terahertz absorption layer |
-
2016
- 2016-05-23 CN CN201610347374.XA patent/CN105908180A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103489943A (en) * | 2013-10-16 | 2014-01-01 | 电子科技大学 | Terahertz absorption layer of carbon nano tube and metamaterial composite structure and preparation method of terahertz absorption layer |
Non-Patent Citations (2)
| Title |
|---|
| 张宇: "太赫兹器件用碳纳米管阵列阴极的研究", 《中国优秀硕士学位论文全文数据库 工程科技I辑》 * |
| 苏妤: "静电喷雾法制备PVDF薄膜及气敏特性研究", 《中国优秀硕士学位论文全文数据库 基础科学辑》 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106832766A (en) * | 2016-12-19 | 2017-06-13 | 西北大学 | Array carbon nano tube polymer composites, preparation method and applications |
| CN106832766B (en) * | 2016-12-19 | 2019-06-04 | 西北大学 | Array carbon nano tube polymer composites, preparation method and applications |
| CN108728846A (en) * | 2017-04-21 | 2018-11-02 | 中国航发商用航空发动机有限责任公司 | The thermal protection coating preparation facilities and thermal protection coating preparation method of hot-end component |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103489943B (en) | The Terahertz absorption layer of carbon nanotube and metamaterial composite structure and preparation method | |
| CN105908180A (en) | Preparation device of terahertz absorption layer and preparation method | |
| CN110530931B (en) | Preparation method of graphene oxide humidity sensor by laser transfer printing | |
| CN107221641B (en) | A kind of lignin is the MoS of carbon source2The preparation method of@C combination electrode material | |
| CN105645408A (en) | Process using date pits to prepare nitrogen-doped porous carbon material and preparation method of super-capacitor electrode | |
| CN104977343B (en) | A kind of high performance biosensors based on graphene/mesoporous carbon nano-composite material and preparation method thereof | |
| CN102206878A (en) | Device for electrospinning three-dimensional controlled structure of nanofibers | |
| CN104075811B (en) | TCR high absorbs the THz detecting structures and preparation method of sensitive laminated film | |
| ZHANG et al. | Advances in ambient ionization for mass spectrometry | |
| CN109742242A (en) | A kind of wide spectrum nano-array detector and preparation method thereof | |
| CN112254630A (en) | Flexible wearable sensor with high sensitivity and high deformation range and preparation method thereof | |
| CN105575752B (en) | A kind of difunctional uniform internal diameter skin liquid spectrum nozzle needle and preparation method | |
| CN207340433U (en) | Absorbing material structure is used in ventilation | |
| CN210646954U (en) | Multilayer coating device | |
| CN203578051U (en) | Two-stage electric field structure electrostatic spraying system and array | |
| CN109540970A (en) | One kind being based on novel ZnO nano column/SnO2Thin film detector and preparation method | |
| CN109130168B (en) | Preparation method of direct-writing high-flexibility organic electrode | |
| CN112254848A (en) | Multi-channel flexible pressure sensor based on ink-jet printing preparation | |
| CN206192944U (en) | A single pixel solid -phase extraction array panel for sample pretreatment in mass spectrum formation of image and formation of image analytic system thereof | |
| CN109647359A (en) | A kind of preparation and its application of ion liquid functionalization polyacrylonitrile nanofiber film | |
| CN209387570U (en) | One kind being based on novel ZnO nano column/SnO2Thin film detector | |
| CN103746135A (en) | Biological fuel cell and preparation method thereof | |
| CN109192808A (en) | A kind of infrared detector and preparation method thereof | |
| CN208738282U (en) | A kind of infrared detector | |
| CN103236502B (en) | Preparation method for activated layer of polymer solar battery |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20160831 |
|
| RJ01 | Rejection of invention patent application after publication |