CN105895541B - The forming method of encapsulating structure - Google Patents

The forming method of encapsulating structure Download PDF

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Publication number
CN105895541B
CN105895541B CN201610422656.1A CN201610422656A CN105895541B CN 105895541 B CN105895541 B CN 105895541B CN 201610422656 A CN201610422656 A CN 201610422656A CN 105895541 B CN105895541 B CN 105895541B
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connecting key
plastic packaging
packaging layer
chip
key
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CN105895541A (en
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高国华
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Tongfu Microelectronics Co Ltd
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Tongfu Microelectronics Co Ltd
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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  • Physics & Mathematics (AREA)
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  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

A kind of forming method of encapsulating structure, including：The substrate core layer with opposite first surface and second surface is formed, substrate core layer includes plastic package structure and the connection bond structure in plastic package structure；The first chip is coated in plastic package structure, the first chip has functional surfaces, and functional surfaces are arranged towards first surface；It includes the first connecting key and the second connecting key being electrically connected to connect bond structure, the distance of second connecting key to first surface is more than the first connecting key to the distance of first surface, the distance of second connecting key to the first chip is more than the distance of the first connecting key to the first chip, and the first connecting key is electrically connected with the functional surfaces；The second chip is fixed in second surface, the second chip and the first chip are located at the same side of connection bond structure；Bond wire line is formed using routing technique, one end of bond wire line is electrically connected with the second connecting key, and the other end of bond wire line is electrically connected with the second chip.The method improves the reliability of encapsulating structure.

Description

The forming method of encapsulating structure
Technical field
The present invention relates to technical field of manufacturing semiconductors more particularly to a kind of forming methods of encapsulating structure.
Background technology
Wafer-level packaging (Wafer Level Packaging, abbreviation WLP) technology is to be packaged test to full wafer wafer It cuts to obtain the technology of single finished product chip again afterwards.With ceramic leadless chip carrier (Ceramic Leadless Chip Carrier) or organic leadless chip carrier (Organic Leadless Chip Carrier) isotype is compared, wafer scale Encapsulation technology has many advantages, such as lighter, smaller, shorter, thinner and more cheap.Wafer level packaging be can by IC design, The technology that wafer manufacture, packaging and testing, substrate manufacture integrate, thus as the hot spot in current encapsulation field and the following hair The trend of exhibition.
Fan-out wafer encapsulation is one kind of wafer-level packaging.Fan-out wafer packaging method comprises the following steps that：It is carrying Body surface face forms stripping film, and forms first medium layer in stripping film surface, and the first graph layer, institute are formed on first medium layer The first graph layer is stated with the first opening；The first metal electrode for being connect with edge of substrate is formed in the first opening, the One figure layer surface forms interconnection metal layer again；In the first surface of metal electrode, again wiring metal layer surface and first medium Layer surface forms second dielectric layer, and forms second graph layer in second medium layer surface, and the second graph layer has second Opening；The second metal electrode for being connect with die terminals is formed in the second opening；By flip-chip to the second metal electrode Afterwards, plastic packaging layer is formed in second dielectric layer and chip surface, the plastic packaging layer surrounds the chip, forms encapsulating structure；It will carry Body and stripping film are detached with encapsulating structure；Ball reflux is planted, soldered ball is formed；Monolithic cutting forms fan-out chip packaging structure.
However, the reliability for the encapsulating structure that existing Wafer level packaging is formed is poor.
Invention content
Problems solved by the invention is to provide a kind of forming method of encapsulating structure, to improve the reliability of encapsulating structure.
To solve the above problems, the present invention provides a kind of forming method of encapsulating structure, including：Substrate core layer is formed, The substrate core layer have opposite first surface and second surface, substrate core layer include plastic package structure and be located at plastic packaging knot Connection bond structure in structure；The first chip is coated in the plastic package structure, first chip has functional surfaces, and the work( It can be arranged facing towards first surface；The connection bond structure includes the first connecting key and the second connecting key being electrically connected, and second The distance of connecting key to first surface is more than the first connecting key to the distance of first surface, second connecting key to the first chip Distance be more than the distance of the first connecting key to the first chip, first connecting key is electrically connected with the functional surfaces；Institute It states second surface and fixes the second chip, second chip and the first chip are located at the same side of connection bond structure；Using routing Technique forms bond wire line, and one end and the second connecting key of the bond wire line be electrically connected, bond wire line it is another End is electrically connected with the second chip.
Optionally, the plastic package structure includes the first plastic packaging layer and intermediate plastic packaging layer；Form the side of the substrate core layer Method includes：Support plate and the first chip are provided, first chip has functional surfaces；The first chip is fixed on the support plate surface, The functional surfaces are arranged towards support plate surface；The first plastic packaging layer is formed on the support plate surface and through the first of the first plastic packaging layer Connecting key, the first plastic packaging layer surround the first chip, and there is the first connecting key first end, first end to be arranged towards support plate surface； Intermediate plastic packaging layer is formed on the surface and the first chip of the first plastic packaging layer and the first connecting key and is located at intermediate plastic packaging layer In the second connecting key, the intermediate plastic packaging layer exposes the surface of the second connecting key；Form intermediate plastic packaging layer and the second connection After key, the support plate is removed, to expose the first end surfaces of functional surfaces and the first connecting key；After removing the support plate, shape At bottom connecting key, the bottom connecting key is connect with functional surfaces and the first end surfaces respectively.
Optionally, the connection bond structure further includes intermediate connecting key, and first connecting key and the second connecting key pass through Intermediate connecting key is electrically connected；The intermediate plastic packaging layer includes being located at the second plastic packaging layer of the first plastic packaging layer surface and being located at The third plastic packaging layer of second plastic packaging layer and intermediate connection key surface；The intermediate connecting key run through the second plastic packaging layer, described second Connecting key is located in third plastic packaging layer.
Optionally, first connecting key also has the second end opposite with first end；Form the intermediate connecting key, The method of two connecting keys and intermediate plastic packaging layer includes：On the surface and the first core of the first plastic packaging layer and the first connecting key On piece forms the second plastic packaging layer and the intermediate connecting key through the second plastic packaging layer, and the intermediate connecting key is with opposite the One connecting pin and second connection end, the distance of the first connecting pin to the first chip be less than second connection end to the first chip away from From the first connecting pin is connect with second end；The surface of the second plastic packaging layer and intermediate connecting key formed third plastic packaging layer and Through the second connecting key of third plastic packaging layer, there is second connection end opposite third end and the 4th end, third end to connect with second End connection is connect, the third plastic packaging layer exposes the 4th end surfaces.
Optionally, the material of the first connecting key, the second connecting key and intermediate connecting key is copper, tungsten, aluminium, gold or silver.
Optionally, the plastic package structure further includes the 4th plastic packaging layer；The method for forming the substrate core layer further includes： It is formed after intermediate plastic packaging layer and the second connecting key, and before the removal support plate, in the second connecting key and intermediate plastic packaging layer Surface forms the first pad and surrounds the 4th plastic packaging layer of the first pad, and first pad has opposite first face of weld and the Two faces of weld, first face of weld connect key connection with second, and the 4th plastic packaging layer exposes second face of weld；The bond wire line One end is connect with second face of weld.
Optionally, the plastic package structure further includes the 5th plastic packaging layer and the 6th plastic packaging layer；The bottom connecting key includes the Two pads and multiple third connecting keys, second pad pass through multiple third connecting keys first end with the first connecting key respectively Surface and functional surfaces connection, the third connecting key run through the 5th plastic packaging layer, and second pad runs through the 6th plastic packaging layer.
Optionally, the method for the 5th plastic packaging layer of formation, the 6th plastic packaging layer and bottom connecting key includes：Remove the support plate Afterwards, the 5th plastic packaging layer and multiple third connecting keys are formed on the surface and functional surfaces of the first plastic packaging layer and first end, the Three connecting keys run through the 5th plastic packaging layer, and third connecting key is connected to the first end surfaces and functional surfaces；In the 5th plastic packaging The surface of layer and third connecting key forms the 6th plastic packaging layer and the second pad through the 6th plastic packaging layer, second pad It is connect respectively with the first end surfaces and functional surfaces by multiple third connecting keys.
Optionally, the functional surfaces include functional areas；After removing the support plate, surface and the first end of functional areas are exposed Surface；The bottom connecting key is connect with the surface of functional areas and the first end surfaces respectively.
Optionally, further include：Soldered ball is formed on the surface of the bottom connecting key.
Optionally, the material of the bond wire line is copper, tungsten, aluminium, gold or silver.
Optionally, further include：Form the protective layer for covering second chip, bond wire line and second surface.
Optionally, the surface of second chip has lead end；The other end of the bond wire line and the lead End connection.
Optionally, passive device is also wrapped up in the plastic package structure, the passive device is electrically connected with the first connecting key； First connecting key is between the passive device and the first chip.
Compared with prior art, technical scheme of the present invention has the following advantages：
The forming method of encapsulating structure provided by the invention, since the connection bond structure of formation includes the first connecting key and the Two connecting keys, the distance of the second connecting key to the first chip are more than the distance of the first connecting key to the first chip, and the second chip It is located at the same side of connection bond structure with the first chip, connects so that the distance of the second connecting key to the second chip is more than first Connect key to the second chip distance.It is the bond wire line since the distance of the second connecting key to the second chip is larger Provide enough spaces so that bond wire line is easy to be formed.Therefore the reliability of bond wire line improves, to improve The reliability of encapsulating structure.
Description of the drawings
Fig. 1 is a kind of schematic diagram of encapsulating structure；
Fig. 2 to Figure 12 is the structural schematic diagram of the forming process of encapsulating structure provided by the invention.
Specific implementation mode
As described in background, the reliability for the encapsulating structure that the prior art is formed is to be improved.
Fig. 1 is a kind of cross-sectional view of encapsulating structure, and encapsulating structure includes：First chip 100, first core Piece 100 has functional surfaces；Plastic packaging layer 130, the plastic packaging layer 130 have opposite first surface and second surface, the plastic packaging Layer 130 surrounds first chip 100, and the functional surfaces of first chip 100 are arranged towards first surface；Conductive plunger 120, In plastic packaging layer 130, the conductive plunger 120 has opposite first total end face and second total end face, first total end face court It is arranged to first surface, first total end face is electrically connected with functional surfaces；Second chip 160 is located at second surface, second core Piece 160 and the first chip 100 are located at the same side of conductive plunger 120；Bond wire line 170, the one of the bond wire line 170 End is electrically connected with second total end face, and the other end of the bond wire line 170 is electrically connected with the second chip 160.
The bond wire line 170 is formed using routing technique.
However, the reliability of above-mentioned encapsulating structure is poor, reason is：
With the continuous reduction of characteristic size, the distance of the 120 to the second chip of conductive plunger 160 constantly reduces, and leads to The distance of two total end faces to the second chip 160 reduces.In addition, first total end face of conductive plunger 120 to the first chip 100 away from With a distance from second total end face to the first chip 100 equal to conductive plunger 120.When the second chip 160 is in the throwing of second surface Shadow area is more than the first chip 100 in the projected area of second surface, and the distance of second total end face to the second chip 160 subtracts It is small.
Since the distance of second total end face to the second chip 160 reduces, cause to be supplied to the space of bond wire line 170 compared with Small, resulting in bond wire line 170 cannot be normally carried out using routing technique, influence the formation of bond wire line 170.To The reliability of encapsulating structure is caused to reduce.
On this basis, the present invention provides a kind of forming method of encapsulating structure, including：Substrate core layer is formed, it is described There is substrate core layer opposite first surface and second surface, substrate core layer to include plastic package structure and be located in plastic package structure Connection bond structure；The first chip is coated in the plastic package structure, first chip has functional surfaces, and the functional surfaces It is arranged towards first surface；The connection bond structure includes the first connecting key and the second connecting key being electrically connected, the second connection Key to first surface distance be more than the first connecting key to first surface distance, second connecting key to the first chip away from With a distance from more than the first connecting key to the first chip, first connecting key is electrically connected with the functional surfaces；Described The second chip is fixed on two surfaces, and second chip and the first chip are located at the same side of connection bond structure；Using routing technique Form bond wire line, one end and the second connecting key of the bond wire line be electrically connected, the other end of bond wire line and Second chip is electrically connected.
Since connection bond structure includes the first connecting key and the second connecting key, the distance of the second connecting key to the first chip is big In the first connecting key to the distance of the first chip, and the second chip and the first chip are located at the same side of connection bond structure, therefore So that the distance of the second connecting key to the second chip is more than the distance of the first connecting key to the second chip.So that the second connecting key arrives The distance of second chip is larger, and enough spaces are provided for the bond wire line so that and bond wire line is easy to be formed, because The reliability of this bond wire line improves.To improve the reliability of encapsulating structure.
To make the above purposes, features and advantages of the invention more obvious and understandable, below in conjunction with the accompanying drawings to the present invention Specific embodiment be described in detail.
Fig. 2 to Figure 12 is the structural schematic diagram of the forming process of encapsulating structure provided by the invention.
With reference to figure 2, support plate 200 and the first chip 210 are provided, first chip 210 has functional surfaces 211.
The support plate 200 provides workbench for subsequent technique, the part plastic packaging for carrying the first chip, being subsequently formed Structure and the part connection bond structure being subsequently formed.
The support plate 200 has opposite the 5th surface 201 and the 6th surface 202.
In the present embodiment, the support plate 200 is rigid substrate, and the rigid substrate is PCB substrate, glass substrate, gold Belong to substrate, semiconductor substrate or polymeric substrates.The rigid substrate has higher hardness, deformation is not susceptible to, follow-up Enough support forces are provided in technique.
In other embodiments, the support plate can also be flexible base plate.
First chip 210 can be sensor chip, logic circuit chip, storage chip etc..The functional surfaces 211 Functional areas in can have transistor, passive device (such as resistance, capacitance and inductance etc.), memory device, sensor, electricity mutually Link one or more of structure.
First chip 210 has opposite functional surfaces 211 and non-functional surface 212.
The forming step of first chip 210 includes：Substrate is provided, the substrate has several chip regions, the lining Bottom includes opposite the first initial surface and the second initial surface, has work(in the chip region of the second initial surface of the substrate It can area；The substrate is cut, several chip regions is made to be separated from each other, forms independent first chip 210.
With continued reference to Fig. 2, the first chip 210 is fixed on 200 surface of the support plate, the functional surfaces 211 are towards support plate 200 Surface is arranged.
Specifically, fixing the first chip 210, the work(of first chip 210 on the 5th surface 201 of the support plate 200 Energy face 211 is arranged towards the 5th surface 201.
The functional surfaces 211 include functional areas.
In the present embodiment, the functional areas surface of first chip 210 exposes initial pad；The initial pad table There is convex block 213, the convex block 213 to protrude from the functional surfaces 211 of first chip 210, the work(of first chip 210 in face The bottom surface of energy area surface, that is, convex block 213.
The material of the convex block 213 includes copper, gold or tin, and the convex block 213 has preset thickness.213 energy of the convex block Enough circuit or device realizations in functional areas are electrically connected.The convex block 213 is used to carry out with the connection bond structure being subsequently arranged Electrical connection, the second chip and passive device and external circuit to realize the functional areas of the first chip 210 and be subsequently formed Between electrical connection.
The functional surfaces 211 of first chip 210 are fixed on the 5th table of the support plate 200 by adhesive layer (not shown) Face 201.
In the present embodiment, the material of the adhesive layer is UV glue, and UV glue viscosity after ultraviolet light irradiates reduces, so as to Subsequently support plate 200 is removed from encapsulating structure.The material of the adhesive layer can also be other cohesive materials.
In one embodiment, adhesive layer is adhered in the functional surfaces 211 of first chip 210, then by the adhesive layer It is adhered to the 5th surface 201 of support plate 200, to realize the bonding between the first chip 210 and support plate 200.In another implementation In example, the corresponding position for needing to fix the first chip on the 5th surface of the support plate forms adhesive layer, then by the first chip Functional surfaces are adhered to the tie layer surface, and first chip is made to be fixed on the 5th surface of support plate.
In the present embodiment, the 5th surface 201 of the support plate 200 is global covers the adhesive layer.
In the present embodiment, further include：Passive device 220 is fixed on the 5th surface 201 of the support plate 200.It is described passive Device 220 is fixed on the 5th surface 201 of the support plate 200 by the adhesive layer.
The passive device 220 has opposite third surface and the 4th surface, the third surface and the 5th surface 201 It is fixed.
The passive device 220 can be resistance, capacitance, inductance, converter, taper, resonator, filtering net, mixing Device or switch.
With reference to figure 3, forms the first plastic packaging layer 230 on 200 surface of the support plate and connect through the first of the first plastic packaging layer 230 Connect key 240, the first plastic packaging layer 230 surrounds the first chip 210, and the first connecting key 240 has a first end, and first end is towards support plate 200 surfaces are arranged.
Specifically, forming the first plastic packaging layer 230 on the 5th surface 201 and connecting through the first of the first plastic packaging layer 230 Key 240 is connect, first end is arranged towards the 5th surface 201.
In the present embodiment, the first plastic packaging layer 230 also covers the passive device 220.
First connecting key 240 connects a part for bond structure for subsequently constituting.The material of first connecting key 240 Material is conductive material, and the conductive material is copper, tungsten, aluminium, gold or silver.
The first plastic packaging layer 230 is photosensitive dry film, non-photo-sensing dry film or capsulation material film.
In one embodiment, the first plastic packaging layer 230 is photosensitive dry film, the formation process of the first plastic packaging layer 230 For vacuum film coating process.In another implementation, the material of the first plastic packaging layer 230 is capsulation material, the capsulation material packet Include epoxy resin, polyimide resin, benzocyclobutane olefine resin, polybenzoxazoles resin, polybutylene terephthalate, poly- carbon Acid esters, polyethylene, polypropylene, polyolefin, polyurethane, polyolefin, polyether sulfone, polyamide, gathers polyethylene terephthalate Polyurethane, ethylene-vinyl acetate copolymer, polyvinyl alcohol or other suitable polymer materials.In other embodiments, described First plastic packaging layer, 230 material may be other insulating materials.
In the present embodiment, the first plastic packaging layer 230 is formed on the 5th surface 201, the first plastic packaging layer 230 surrounds institute It states the first chip 210 and exposes the non-functional surface 212, the first plastic packaging layer 230 also covers the passive device 220, There is the first opening (not shown), first opening to expose the 5th surface of support plate 200 in the first plastic packaging layer 230 201；First connecting key 240 is formed in first opening using electroplating technology or sputtering technology.
There is first connecting key 240 opposite first end and second end, first end to be arranged towards the 5th surface 201, First plastic packaging layer 230 exposes the second end of the first connecting key 240.The intermediate connecting key and the first connecting key 240 being subsequently formed Second end connection.
Specifically, the step of forming the first plastic packaging layer 230 includes：Covering described first is formed on the 5th surface 201 First plastic packaging film of chip 210 and passive device 220；First plastic packaging film is polished, until exposing described first The non-functional surface 212 of chip 210；Then the graphical initial plastic packaging layer, to form the first plastic packaging layer 230, the first plastic packaging There is the first opening in layer 230.
In other embodiments, the first plastic packaging layer can also cover the non-functional surface.Correspondingly, forming the first modeling The step of sealing is：The first plastic packaging film for covering first chip and passive device is formed in first sublist face；Figure Change first plastic packaging film, to form the first plastic packaging layer, there is the first opening in the first plastic packaging layer.
The formation process of first plastic packaging film includes Shooting Technique (injection molding), turns modeling technique (transfer molding) or silk-screen printing technique.
Forming the Shooting Technique that the first plastic packaging film uses includes：Mold is provided；Capsulation material is filled in the mold, is made The capsulation material coats first chip 210 and passive device 220；Elevated cure is carried out to the capsulation material, is formed First plastic packaging film.
In other embodiments, Ke Yishi：The first connecting key is fixed on the 5th surface around first chip, described There is first connecting key opposite first end and second end, the first end to be fixed with the 5th surface, first connecting key The second end is flushed higher than non-functional surface or with the non-functional surface；It is formed on the 5th surface and surrounds first chip The first plastic packaging layer, the first plastic packaging layer exposes second end.
Specifically, the first end of first connecting key is fixed on the 5th surface by the adhesive layer.
Then, intermediate plastic packaging layer is formed on the surface and the first chip of the first plastic packaging layer and the first connecting key With the second connecting key in intermediate plastic packaging layer, the intermediate plastic packaging layer exposes the surface of the second connecting key, and described second Connecting key is electrically connected with the first connecting key, and the second connecting key is more than the first connecting key and the first chip at a distance from the first chip Distance.
The plastic package structure includes the first plastic packaging layer and intermediate plastic packaging layer.The intermediate plastic packaging layer includes being located at the first plastic packaging Second plastic packaging layer of layer surface and the third plastic packaging layer that key surface is connected positioned at the second plastic packaging layer and centre.
The detailed process to form intermediate plastic packaging layer and the second connecting key is described below.
With reference to figure 4, the shape on the surface and the first chip 210 of the first plastic packaging layer 230 and the first connecting key 240 At the second plastic packaging layer 250 and through the intermediate connecting key 260 of the second plastic packaging layer 250, the intermediate connecting key 260 and first Connecting key 240 connects.
Material of the material of the second plastic packaging layer 250 with reference to the first plastic packaging layer 230；The material of the intermediate connecting key 260 Material is no longer described in detail with reference to the material of the first connecting key 240.
The intermediate connecting key 260 connects a part for bond structure for subsequently constituting.
First connecting key 240 second connect key connection by intermediate connecting key 260 with what is be subsequently formed, to realize First connecting key 240 and the second connecting key for being subsequently formed are electrically connected.
The intermediate connecting key 260 has the first opposite connecting pin and second connection end, the first connecting pin to the first core The distance of piece 210 is less than second connection end to the distance of the first chip 210, and the first connecting pin is connect with the first connecting key 240, the Two connecting pins second connect key connection with what is be subsequently formed.
Specifically, the first connecting pin of the intermediate connecting key 260 is connect with the second end of the first connecting key 240.
In the present embodiment, on the surface and the first chip 210 of the first plastic packaging layer 230 and the first connecting key 240 The second plastic packaging layer 250 is formed, there is the second opening for exposing the first connecting key 240 (not scheme in the second plastic packaging layer 250 Show), specifically, second opening exposes 240 second end of the first connecting key；Using electroplating technology or sputtering technology in institute It states and forms intermediate connecting key 260 in the second opening.
Specifically, the forming step of the second plastic packaging layer 250 includes：It is connected in the first plastic packaging layer 230 and first The second plastic packaging film is formed on the surface of key 240 and the first chip 210；Second plastic packaging film is patterned, forms the Two plastic packaging layers 250, and there is the second opening in the second plastic packaging layer 250.
In other embodiments, Ke Yishi：It is first on the surface of first connecting key and the surface of part the first plastic packaging layer Form intermediate connecting key；Then it is formed on the surface of the first plastic packaging layer and the first chip and surrounds the intermediate connecting key Second plastic packaging layer, the second plastic packaging layer expose the surface of intermediate connecting key.
With reference to figure 5, forms third plastic packaging layer 270 on the surface of the second plastic packaging layer 250 and intermediate connecting key 260 and pass through The second connecting key 280 of third plastic packaging layer 270 is worn, the second connecting key 280 is connect with intermediate connecting key 260.
The material of the third plastic packaging layer 270 is with reference to the material of the first plastic packaging layer 230, the material ginseng of the second connecting key 280 According to the material of the first connecting key 240, no longer it is described in detail.
Second connecting key 280 has opposite third end and the 4th end.
Specifically, the third end of the second connecting key 280 is connect with the second connection end of intermediate connecting key 260.The third Plastic packaging layer 270 exposes the 4th end surfaces.
Second connecting key 280 connects a part for bond structure for subsequently constituting.
Since the distance of second connection end to the first chip 210 is more than the distance of the first connecting pin to the first chip 210, the One connecting key 240 is connect with the first connecting pin, and the second connecting key 280 is connect with second connection end, so that being parallel to On the direction in one sublist face 201, the distance of second the 280 to the first chip of connecting key 210 is more than first the 240 to the first core of connecting key The distance of piece 210.
In the present embodiment, third plastic packaging layer 270 is formed on the surface of the second plastic packaging layer 250 and intermediate connecting key 260, There is the third opening (not shown) for exposing intermediate connecting key 260, specifically, the third in the third plastic packaging layer 270 Opening exposes second connection end；Second connecting key is formed in third opening using electroplating technology or sputtering technology 280。
Specifically, the forming step of the third plastic packaging layer 270 includes：In the second plastic packaging layer 250 and intermediate connection The surface of key 260 forms third plastic packaging film；The third plastic packaging film is patterned, forms third plastic packaging layer 270, and described There is third opening in third plastic packaging layer 270.
In other embodiments, Ke Yishi：It is fixedly connected with the second connecting key in the second connection end；Later, described The surface of second plastic packaging layer and intermediate connecting key forms the third plastic packaging layer for surrounding second connecting key, the third plastic packaging layer Expose the surface of the second connecting key.
First connecting key 240,260 and second connecting key 280 of intermediate connecting key constitute connection bond structure.
In the present embodiment, further include：With reference to figure 6, after forming intermediate plastic packaging layer and the second connecting key 280, second The surface of connecting key 280 and intermediate plastic packaging layer forms the first pad 300 and surrounds the 4th plastic packaging layer 290 of the first pad 300, institute Stating the first pad 300 has opposite first face of weld and second face of weld, and first face of weld connect with the second connecting key 280, and described the Four plastic packaging layers 290 expose second face of weld.
The plastic package structure further includes the 4th plastic packaging layer 290.
Specifically, after forming intermediate plastic packaging layer and the second connecting key 280, in the second connecting key 280 and third plastic packaging The surface of layer 270 forms the first pad 300 and surrounds the 4th plastic packaging layer 290 of the first pad 300.
The material of first pad 300 is metal, such as copper, tungsten, aluminium, gold or silver.
Specifically, first face of weld is connect with the 4th end, second face of weld is connect with the bond wire line being subsequently formed.
In the present embodiment, it is initially formed the first pad 300, the first pad 300 is located at 280 surface of the second connecting key and part The surface of three plastic packaging layers 270；Then it is formed on the surface of the third plastic packaging layer 270 and surrounds the 4th of first pad 300 Plastic packaging layer 290, the 4th plastic packaging layer 290 expose second face of weld of the first pad 300.
The technique for forming the 4th plastic packaging layer 290 is silk-screen printing technique, such as silk-screen printing green oil technique.
In the present embodiment, second face of weld of the 4th plastic packaging layer 290 also the first pad of covering part 300.
In other embodiments, Ke Yishi：It is initially formed the 4th plastic packaging layer, has in the 4th plastic packaging layer and exposes second The 4th opening for connecting key surface forms the first pad in the 4th opening.
With reference to figure 7, after forming the first pad 300 and the 4th plastic packaging layer 290, support plate 200 (with reference to figure 6) is removed, to sudden and violent Expose the first end surfaces of functional surfaces 211 and the first connecting key 240.
Specifically, after removal support plate 200, the surface of functional areas is exposed.
In the present embodiment, after removing support plate 200, the third surface of passive device 220 is also exposed.
In the present embodiment, the adhesive layer, the bonding are covered since the 5th surface of the support plate 200 201 is global Layer material be UV glue, first chip 210, the first connecting key 240 and passive device 220 by the adhesive layer with it is described 5th surface 201 of support plate 200 is fixed, and the first plastic packaging layer 230 is formed in the tie layer surface, therefore can be passed through Ultraviolet light is carried out to the adhesive layer, so that the viscosity of adhesive layer is reduced, then by the support plate 200 from first chip 230 sur-face peeling of 210 functional surfaces 211, the first end of the first connecting key 240 and the first plastic packaging layer, to expose the first core The third surface of the functional surfaces of piece 210, the first end surfaces of the first connecting key 240 and passive device 220.
After removing the support plate 200, cleaning is used to remove remaining adhesive layer.
In other embodiments, additionally it is possible to which the support plate 200 is removed by etching technics or CMP process.
After removing the support plate, formed bottom connecting key, the bottom connecting key respectively with functional surfaces and the first end surfaces Connection.
The plastic package structure further includes the 5th plastic packaging layer and the 6th plastic packaging layer；The bottom connecting key include the second pad and Multiple third connecting keys, second pad by multiple third connecting keys respectively with the first end surfaces of the first connecting key and Functional surfaces connect, and the third connecting key runs through the 5th plastic packaging layer, and second pad runs through the 6th plastic packaging layer.
Lower mask body introduces the forming process to form the 5th plastic packaging layer, the 6th plastic packaging layer and bottom connecting key.
With reference to figure 8, after removing the support plate 200, in the first end of the first plastic packaging layer 230 and the first connecting key 240 Surface and functional surfaces 211 form the 5th plastic packaging layer 310 and multiple third connecting keys 320, the third connecting key 320 run through The 5th plastic packaging layer 310, the third connecting key 320 are connected to the first end surfaces and function of the first connecting key 240 Face 211.
Specifically, the third connecting key 320 is connected to the surface of functional areas.
In the present embodiment, the third surface of the passive device 220 is also connected with third connecting key 320.
Specifically, the first end surfaces of the first plastic packaging layer 230 and the first connecting key 240, passive device 220 Three surfaces and functional surfaces 211 form the 5th plastic packaging layer 310, have multiple 5th openings in the 5th plastic packaging layer 310 (not Diagram), the first end surfaces of the first connecting key 240, the third surface of passive device 220 and functional surfaces 211 are corresponding with the Five openings；Third connecting key 320 is formed in the 5th opening using electroplating technology or sputtering technology.
In other embodiments, third connecting key 320 is individually fixed in the first end surfaces, the nothing of the first connecting key 240 The third surface of source device 220 and functional surfaces 211；Later, in the surface of the first plastic packaging layer 230,211 and of functional surfaces The third surface of passive device 220 forms the 5th plastic packaging layer 310 for surrounding the third connecting key 320, the 5th plastic packaging layer 310 expose the surface of third connecting key 320.
With reference to figure 9, forms the 6th plastic packaging layer 330 on the surface of the 5th plastic packaging layer 310 and third connecting key 320 and pass through Wear the second pad 340 of the 6th plastic packaging layer 330, second pad 340 is by multiple third connecting keys 320 respectively with The first end surfaces and functional surfaces of one connecting key 240 connect.
The surface of the functional areas is connected with third connecting key 320, second pad 340 pass through functional areas surface Three connecting keys 320 are connect with functional areas.
Material of the material of second pad 340 with reference to the first pad 300.
In the present embodiment, second pad 340 also connects with the third connecting key 320 on the third surface of passive device 220 It connects.
Specifically, the 6th plastic packaging layer 330 is formed on the surface of the 5th plastic packaging layer 310 and third connecting key 320, it is described Have multiple six to be open (not shown) in 6th plastic packaging layer 330, the 6th opening exposes the third connecting key 320； Second pad 340 is formed in the 6th opening using electroplating technology or sputtering technology.
In other embodiments, the second pad 340 is fixed on 310 surface of third connecting key 320 and the 5th plastic packaging layer；It Afterwards, it is formed on 310 surface of the 5th plastic packaging layer and surrounds the 6th plastic packaging layer 330 of second pad 340, the 6th plastic packaging Layer 330 exposes the surface of the second pad 340.
Wherein, the first plastic packaging layer 230, the second plastic packaging layer 250, third plastic packaging layer 270, the 4th plastic packaging layer the 290, the 5th Plastic packaging layer 310 and the 6th plastic packaging layer 330 constitute plastic package structure；First connecting key 240,260 and second connecting key of intermediate connecting key 280 constitute connection bond structure.
The plastic package structure, connection bond structure, the first pad 300, third connecting key 320 and the second pad 340 constitute base Plate core layer.
The substrate core layer has opposite first surface and second surface.
The second surface corresponds to second face of weld on the surface and the first pad 300 of the 4th plastic packaging layer exposed.
With reference to figure 10, the second chip 350,350 He of the second chip are formed in the second surface of the substrate core layer First chip 210 is located at the same side of connection bond structure.
Second chip 350 can be sensor chip, logic circuit chip, storage chip etc..
Second chip 350 is fixed on second surface by main binder (not shown).The material of the main binder With reference to the material of the binder, no longer it is described in detail.
Since the second connecting key 280 is more than the first connecting key 240 and the first chip 210 at a distance from the first chip 210 Distance, and the second chip 350 and the first chip 210 are located at the same side of connection bond structure so that the second connecting key 280 with The distance of second chip 350 is more than the first connecting key 240 at a distance from the second chip 400.
Continue to refer to figure 10, bond wire line 360 formed using routing technique, one end of the bond wire line 360 with First pad 300 connects, and the other end of the bond wire line 360 is connect with the second chip 350.
The material of the bond wire line 360 is metal, such as copper, tungsten, aluminium, gold or silver.
In the present embodiment, second face of weld of one end connection of the bond wire line 360, the one of the bond wire line 360 End is electrically connected by the first pad 300 with the second connecting key 280.Second chip, 350 surface has lead end, the key The other end for closing metal wire 360 is connect with the lead end.
In the present embodiment, the routing technological requirement bond wire line 360 has certain radian, it is therefore desirable to the first weldering The distance between the routing point on 300 surface of disk and the routing point on 350 surface of the second chip cannot be too small, if 300 table of the first pad The distance between the routing point in face and the routing point on 350 surface of the second chip are too small, then cause routing technique that cannot be normally carried out, So that the reliability of encapsulating structure reduces.
When the area that the second chip 350 is projected in second surface is more than the first chip 210 and is projected in the area of second surface When, if connection bond structure is equal to connection bond structure far from the second table close to one end of second surface at a distance from the second chip 350 The one end in face at a distance from the second chip 350, cause to connect bond structure close to one end of second surface and the second chip 350 away from From too small, it cannot be that bond wire line 360 provide enough spaces, influence the formation of bond wire line 360.
In the present embodiment, since the second connecting key 280 is more than the first connecting key 240 and the at a distance from the second chip 350 The distance of two chips 350 so that the second connecting key 280 is larger at a distance from the second chip 350, to form 360 line of bond wire Provide enough spaces so that routing technique can be normally carried out, to improve the reliability of encapsulating structure.
With reference to figure 11, the protective layer 370 for covering second chip 350, bond wire line 360 and second surface is formed.
The protective layer 370 covers the first pad 300 and the 4th plastic packaging layer 290.
The material of the protective layer 370 is insulating materials, and the insulating materials is organic insulating material or inorganic insulation material Material.
In one embodiment, when the material of the protective layer 370 is organic insulating material, the organic insulating material includes Polyvinyl chloride or resin；The resin includes epoxy resin, polyimide resin, benzocyclobutane olefine resin or polybenzoxazoles tree Fat.Correspondingly, the formation process of the protective layer 370 can be spraying process or Shooting Technique.
In another embodiment, the material of the protective layer 370 is inorganic insulating material, and the inorganic insulating material includes It is one or more in silica, silicon nitride and silicon oxynitride.Correspondingly, the formation process of the protective layer 370 being capable of chemistry Gas-phase deposition, physical gas-phase deposition, atom layer deposition process.
With reference to figure 12, after forming protective layer 370, soldered ball 380 is formed on 340 surface of the second pad.
The material of the soldered ball 380 includes tin.
In the present embodiment, the forming step of the soldered ball 380 includes：In the surface printing tin cream of second pad 340； High temperature reflux is carried out to the tin cream, under surface tension effects, forms soldered ball 380.In another embodiment, additionally it is possible to first exist The surface printing scaling powder and soldered ball particle of second pad, then high temperature reflux form soldered ball.In another embodiment, described The electroplating surface tin column of two pads, then high temperature reflux form soldered ball.
Between second pad 340 and the soldered ball 380, moreover it is possible to be formed with (the Under Ball of metal structure under ball Metal, abbreviation UBM).Metal structure can include the metal layer of single metal layer or multiple-layer overlapped under the ball；The single layer The material of metal layer or more metal layers includes one or more combinations in copper, aluminium, nickel, cobalt, titanium, tantalum.
Although present disclosure is as above, present invention is not limited to this.Any those skilled in the art are not departing from this It in the spirit and scope of invention, can make various changes or modifications, therefore protection scope of the present invention should be with claim institute Subject to the range of restriction.

Claims (14)

1. a kind of forming method of encapsulating structure, which is characterized in that including：
Substrate core layer is formed, the substrate core layer includes with opposite first surface and second surface, substrate core layer Plastic package structure and the connection bond structure in plastic package structure；
The first chip is coated in the plastic package structure, first chip has functional surfaces, and functional surfaces direction first Surface is arranged；
The connection bond structure includes the first connecting key and the second connecting key being electrically connected, the second connecting key to first surface Distance is more than the first connecting key to the distance of first surface, and the distance of second connecting key to the first chip is more than the first connection To the distance of the first chip, first connecting key is electrically connected key with the functional surfaces；
The second chip is fixed in the second surface, second chip and the first chip are located at the same side of connection bond structure；
Bond wire line is formed using routing technique, one end and the second connecting key of the bond wire line are electrically connected, and are bonded The other end of metal wire is electrically connected with the second chip.
2. the forming method of encapsulating structure according to claim 1, which is characterized in that the plastic package structure includes the first modeling Sealing and intermediate plastic packaging layer；
The method for forming the substrate core layer includes：
Support plate and the first chip are provided, first chip has functional surfaces；
The first chip is fixed on the support plate surface, the functional surfaces are arranged towards support plate surface；
The first plastic packaging layer is formed on the support plate surface and through the first connecting key of the first plastic packaging layer, the first plastic packaging layer surrounds the There is first end, first end to be arranged towards support plate surface for one chip, the first connecting key；
Intermediate plastic packaging layer is formed on the surface and the first chip of the first plastic packaging layer and the first connecting key and positioned at centre The second connecting key in plastic packaging layer, the intermediate plastic packaging layer expose the surface of the second connecting key；
After forming intermediate plastic packaging layer and the second connecting key, the support plate is removed, to expose functional surfaces and the first connecting key First end surfaces；
After removing the support plate, bottom connecting key is formed, the bottom connecting key is connect with functional surfaces and the first end surfaces respectively.
3. the forming method of encapsulating structure according to claim 2, which is characterized in that during the connection bond structure further includes Between connecting key, first connecting key and the second connecting key are electrically connected by intermediate connecting key；The intermediate plastic packaging layer includes The second plastic packaging layer positioned at the first plastic packaging layer surface and the third plastic packaging positioned at the second plastic packaging layer and intermediate connection key surface Layer；The intermediate connecting key runs through the second plastic packaging layer, and second connecting key is located in third plastic packaging layer.
4. the forming method of encapsulating structure according to claim 3, which is characterized in that first connecting key also have with The opposite second end of first end；
The method for forming the intermediate connecting key, the second connecting key and intermediate plastic packaging layer includes：
The second plastic packaging layer is formed on the surface and the first chip of the first plastic packaging layer and the first connecting key and through described The intermediate connecting key of second plastic packaging layer, the intermediate connecting key have the first opposite connecting pin and second connection end, and first connects The distance for connecing end to the first chip is less than second connection end to the distance of the first chip, and the first connecting pin is connect with second end；
Third plastic packaging layer is formed on the surface of the second plastic packaging layer and intermediate connecting key and is connected through the second of third plastic packaging layer Key is connect, there is second connection end opposite third end and the 4th end, third end to be connect with second connection end, the third plastic packaging layer Expose the 4th end surfaces.
5. the forming method of encapsulating structure according to claim 3, which is characterized in that the first connecting key, the second connecting key Material with intermediate connecting key is copper, tungsten, aluminium, gold or silver.
6. the forming method of encapsulating structure according to claim 2, which is characterized in that the plastic package structure further includes the 4th Plastic packaging layer；
The method for forming the substrate core layer further includes：
After forming intermediate plastic packaging layer and the second connecting key, and before the removal support plate, moulded in the second connecting key and centre The surface of sealing forms the first pad and surrounds the 4th plastic packaging layer of the first pad, and first pad has the first opposite weldering Face and second face of weld, first face of weld connect key connection with second, and the 4th plastic packaging layer exposes second face of weld；
One end of the bond wire line is connect with second face of weld.
7. the forming method of encapsulating structure according to claim 2, which is characterized in that the plastic package structure further includes the 5th Plastic packaging layer and the 6th plastic packaging layer；The bottom connecting key includes the second pad and multiple third connecting keys, and second pad is logical It crosses multiple third connecting keys to connect with the first end surfaces and functional surfaces of the first connecting key respectively, the third connecting key runs through 5th plastic packaging layer, second pad run through the 6th plastic packaging layer.
8. the forming method of encapsulating structure according to claim 7, which is characterized in that form the 5th plastic packaging layer, the 6th modeling The method of sealing and bottom connecting key includes：
After removing the support plate, the surface of the first plastic packaging layer and first end and functional surfaces formed the 5th plastic packaging layer and Multiple third connecting keys, third connecting key run through the 5th plastic packaging layer, and third connecting key is connected to the first end surfaces and function Face；
The 6th plastic packaging layer is formed on the surface of the 5th plastic packaging layer and third connecting key and through the of the 6th plastic packaging layer Two pads, second pad are connect with the first end surfaces and functional surfaces respectively by multiple third connecting keys.
9. the forming method of encapsulating structure according to claim 2, which is characterized in that the functional surfaces include functional areas； After removing the support plate, surface and the first end surfaces of functional areas are exposed；The bottom connecting key respectively with the table of functional areas Face is connected with the first end surfaces.
10. the forming method of encapsulating structure according to claim 2, which is characterized in that further include：It is connected in the bottom The surface of key forms soldered ball.
11. the forming method of encapsulating structure according to claim 1, which is characterized in that the material of the bond wire line For copper, tungsten, aluminium, gold or silver.
12. the forming method of encapsulating structure according to claim 1, which is characterized in that further include：Form covering described the The protective layer of two chips, bond wire line and second surface.
13. the forming method of encapsulating structure according to claim 1, which is characterized in that the surface of second chip has Leaded end；The other end of the bond wire line is connect with the lead end.
14. the forming method of encapsulating structure according to claim 1, which is characterized in that also wrapped up in the plastic package structure Passive device, the passive device are electrically connected with the first connecting key；First connecting key is located at the passive device and Between one chip.
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