CN105891879A - Integral circuit-based frequency correction type high-frequency detection system - Google Patents
Integral circuit-based frequency correction type high-frequency detection system Download PDFInfo
- Publication number
- CN105891879A CN105891879A CN201610369601.9A CN201610369601A CN105891879A CN 105891879 A CN105891879 A CN 105891879A CN 201610369601 A CN201610369601 A CN 201610369601A CN 105891879 A CN105891879 A CN 105891879A
- Authority
- CN
- China
- Prior art keywords
- pole
- audion
- resistance
- electric capacity
- diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01V—GEOPHYSICS; GRAVITATIONAL MEASUREMENTS; DETECTING MASSES OR OBJECTS; TAGS
- G01V1/00—Seismology; Seismic or acoustic prospecting or detecting
- G01V1/16—Receiving elements for seismic signals; Arrangements or adaptations of receiving elements
- G01V1/18—Receiving elements, e.g. seismometer, geophone or torque detectors, for localised single point measurements
- G01V1/181—Geophones
Landscapes
- Engineering & Computer Science (AREA)
- Remote Sensing (AREA)
- Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Acoustics & Sound (AREA)
- Environmental & Geological Engineering (AREA)
- Geology (AREA)
- General Life Sciences & Earth Sciences (AREA)
- General Physics & Mathematics (AREA)
- Geophysics (AREA)
- Amplifiers (AREA)
Abstract
The invention discloses an integral circuit-based frequency correction type high-frequency detection system. The integral circuit-based frequency correction type high-frequency detection system is characterized in that the integral circuit-based frequency correction type high-frequency detection system is composed of a processing chip U, a band-pass filtering circuit, a resistor R6 which is connected in series between the band-pass filtering circuit and the IN pin of the processing chip U, a capacitor C3, a capacitor C4, a frequency correction circuit, and the like; the frequency correction circuit is connected in series between the band-pass filtering circuit and the negative pole of the capacitor C3; after passing a resistor R7, the positive pole of the capacitor C3 is connected with the C1 pin of the processing chip U; the negative pole of the capacitor C3 is connected with the GND pin of the processing chip U; the positive pole of the capacitor C4 is connected with the C2 pin of the processing chip U; and the negative pole of the capacitor C4 is connected with the GND pin of the processing chip U. The integral circuit-based frequency correction type high-frequency detection system can eliminate fluctuating high-frequency signals which exist after processing, so as to improve the stability of output high-frequency signals.
Description
Technical field
The present invention relates to a kind of demodulation system, specifically refer to a kind of frequency correction type high frequency based on integrating circuit
Demodulation system.
Background technology
Cymoscope can detect certain useful information in fluctuation signal, its be for identify oscillator signal exist or
The device of change is it can also be used to extract the information entrained by the external world.Cymoscope is widely used in ground at present
Noise etc. when matter exploration and engineering survey or the equipment of measurement run, it has brought the biggest facility.
But, the demodulation system that cymoscope the most on the market is used cannot identify high-frequency signal accurately,
Have a strong impact on the exploration result of cymoscope.
Summary of the invention
It is an object of the invention to overcome existing demodulation system cannot identify lacking of high-frequency signal accurately
Fall into, it is provided that a kind of frequency correction type high frequency demodulation system based on integrating circuit.
The purpose of the present invention is achieved through the following technical solutions: a kind of frequency correction type based on integrating circuit is high
Frequently demodulation system, mainly by processing chip U, bandwidth-limited circuit, is serially connected in bandwidth-limited circuit and process
Resistance R6 between the IN pin of chip U, positive pole after resistance R7 with process chip U C1 pin phase
Connect, negative pole meets the electric capacity C3 being connected respectively with the GND pin processing chip U, positive pole and process core
The electric capacity C4 that the C2 pin of sheet U is connected, negative pole is connected with the GND pin of process chip U, with
And it is serially connected in the deaccentuator between the negative pole of bandwidth-limited circuit and electric capacity C3, P pole and process chip
The C3 pin of U is connected, the diode D5 of N pole ground connection, and positive pole is connected with the F0 pin processing chip U
Connect, electric capacity C7, the N pole that negative pole is connected with the N pole of diode D5 and the VCC processing chip U manage
Foot is connected, P pole meets the diode D4 of power supply, and negative pole P with diode D4 after resistance R8 is extremely connected
Connect, electric capacity C5 that positive pole is then connected with bandwidth-limited circuit, be connected with the OUT pin processing chip U
The linear amplifier circuit connect, and it is serially connected in the integrating circuit between negative pole and the linear amplifier circuit of electric capacity C7
Composition；The GND pin ground connection of described process chip U.
Further, described integrating circuit by audion VT6, audion VT7, diode D9, one end with
The P pole of diode D9 is connected, the other end is then as the resistance R18 of input of this integrating circuit, positive pole
After resistance R19, the P pole with diode D9 is connected, negative pole is connected with the base stage of audion VT6
Electric capacity C12, N pole is connected with the colelctor electrode of audion VT7, P pole after resistance R21 with diode D9
The diode D11 that is connected of N pole, negative pole is connected with the base stage of audion VT7, positive pole is through resistance
Electric capacity C13, the P pole being connected with the N pole of diode D9 after R20 is connected with the N pole of diode D9,
The diode D10 that N pole then colelctor electrode with audion VT6 is connected, is serially connected in the current collection of audion VT6
Resistance R22 between the base stage of pole and audion VT7, positive pole is connected with the N pole of diode D9, bears
The electric capacity C11 of pole ground connection, positive pole is connected with the emitter stage of audion VT7, the electric capacity C14 of minus earth,
And one end is connected with the N pole of diode D11, the other end is as the resistance of the outfan of this integrating circuit
R23 forms；The grounded emitter of described audion VT6；The positive pole of described electric capacity C13 and diode D11
P pole be connected；The input of described integrating circuit is connected with the negative pole of electric capacity C7, its outfan then with
Linear amplifier circuit is connected.
Described deaccentuator is by audion VT4, audion VT5, field effect transistor MOS1, field effect
Pipe MOS2, is serially connected in resistance R12, the P pole between base stage and the colelctor electrode of audion VT4 and audion
The diode D6 that the base stage of VT4 is connected, N pole then emitter stage with audion VT4 is connected, negative pole with
The emitter stage of audion VT4 is connected, positive pole grid with field effect transistor MOS2 after resistance R13 is connected
The electric capacity C9 connect, resistance R14, the P pole being serially connected between base stage and the emitter stage of audion VT5 and three poles
The base stage of pipe VT5 is connected, N pole is connected with the grid of field effect transistor MOS1 after resistance R16 two
Pole pipe D7, N pole is connected with the grid of field effect transistor MOS2, the colelctor electrode phase of P pole and audion VT5
The diode D8 connected, is serially connected between the source electrode of field effect transistor MOS2 and the source electrode of field effect transistor MOS1
Resistance R17, and positive pole is connected with the drain electrode of field effect transistor MOS1, negative pole after resistance R15 with
The electric capacity C10 composition that the emitter stage of audion VT5 is connected；The base stage of described audion VT4 is as this frequency
The input of rate correcting circuit and be connected with bandwidth-limited circuit, its grounded collector；Described audion VT5
Emitter stage be connected with the colelctor electrode of audion VT4；The drain electrode of described field effect transistor MOS2 is as this frequency
The outfan of rate correcting circuit is also connected with the negative pole of electric capacity C3.
Described bandwidth-limited circuit is by amplifier P1, audion VT1, audion VT2, N pole and amplifier
The positive pole of P1 is connected, P pole then as the diode D1 of input of this bandwidth-limited circuit, is serially connected in and puts
Resistance R2 between positive pole and the outfan of big device P1, positive pole is connected with the outfan of amplifier P1, bears
The electric capacity C1 of pole ground connection, the resistance R1, P being serially connected between the negative pole of amplifier P1 and the negative pole of electric capacity C1
Voltage stabilizing two pole that pole is connected with the outfan of amplifier P1, N pole then base stage with audion VT1 is connected
Pipe D2, P pole is connected with the emitter stage of audion VT2, N pole after resistance R3 with the negative pole of electric capacity C1
The diode D3 being connected, is serially connected between audion VT1 emitter stage and the input of deaccentuator
Resistance R4, negative pole is connected with the colelctor electrode of audion VT1, the electric capacity C2 of plus earth, and concatenation
Resistance R5 composition between the colelctor electrode and the positive pole of electric capacity C2 of audion VT2；Described audion VT2
Base stage be connected with the colelctor electrode of audion VT1, its emitter stage after resistance R6 with process chip U
IN pin is connected；The positive pole of described electric capacity C2 is connected with the positive pole of electric capacity C5.
Described linear amplifier circuit is by amplifier P2, amplifier P3, audion VT3, positive pole and process chip
The electric capacity C6 that the OUT pin of U is connected, negative pole then negative pole with amplifier P3 is connected, is serially connected in and puts
Resistance R11 between negative pole and the outfan of amplifier P3 of big device P2, is serially connected in the output of amplifier P2
Resistance R10 between end and the positive pole of amplifier P3, one end is connected with the positive pole of amplifier P2, another
End ground connection resistance R9, and positive pole is connected with the outfan of amplifier P2, negative pole then with audion VT3
Colelctor electrode be connected electric capacity C8 composition；The base stage of described audion VT3 and the outfan of amplifier P3
Be connected, its grounded emitter；The outfan of described amplifier P2 then defeated as damned linear amplifier circuit
Go out end；The outfan of described amplifier P3 is also connected with the outfan of integrating circuit.
Described process chip U is the integrated chip of CX20106A.
The present invention compared with the prior art, has the following advantages and beneficial effect:
(1) present invention uses the integrated chip of CX20106A to combine with novel peripheral circuit, can be effective
The detection signal of input is processed, and well the high-frequency signal in detection signal is identified, from
And make the present invention can identify the high-frequency signal in detection signal accurately, greatly improve cymoscope
Exploration precision.
(2) frequency of high-frequency signal can be corrected by the present invention, so that the present invention can be the most right
High-frequency signal is identified.
(3) fluctuation high-frequency signal existing after processing can be eliminated by the present invention, thus improves defeated
Go out the stability of high-frequency signal.
Accompanying drawing explanation
Fig. 1 is the overall structure schematic diagram of the present invention.
Fig. 2 is the structure chart of the deaccentuator of the present invention.
Fig. 3 is the structure chart of the integrating circuit of the present invention.
Detailed description of the invention
Below in conjunction with embodiment, the present invention is described in further detail, but embodiments of the present invention are not
It is limited to this.
Embodiment
As it is shown in figure 1, the frequency correction type high frequency demodulation system based on integrating circuit of the present invention, mainly by
Process chip U, bandwidth-limited circuit, resistance R6, electric capacity C5, resistance R8, diode D4, frequency school
Positive circuit, resistance R7, electric capacity C3, electric capacity C4, electric capacity C7, diode D5, integrating circuit and line
Property amplifying circuit composition.
Wherein, resistance R6 is serially connected between bandwidth-limited circuit and the IN pin processing chip U.Electric capacity C3
Positive pole after resistance R7 with process chip U C1 pin be connected, its negative pole connects and processes chip U's
GND pin is connected.Deaccentuator is then serially connected between the negative pole of bandwidth-limited circuit and electric capacity C3.
The positive pole of electric capacity C4 with process chip U C2 pin be connected, its negative pole with process chip U GND
Pin is connected.The P pole of diode D5 is connected with the C3 pin processing chip U, its N pole ground connection.
The positive pole of electric capacity C7 is connected with the F0 pin processing chip U, the N pole phase of its negative pole and diode D5
Connect.The N pole of diode D4 is connected with the VCC pin processing chip U, its P pole connects power supply.Electricity
The negative pole P pole with diode D4 after resistance R8 holding C5 is connected, its positive pole then with bandpass filtering electricity
Road is connected.Linear amplifier circuit is then connected with the OUT pin processing chip U.Described process chip U
GND pin ground connection.In order to preferably implement the present invention, the described process preferred CX20106A of chip U
Integrated chip realizes.
This bandwidth-limited circuit is by amplifier P1, audion VT1, audion VT2, resistance R1, resistance
R2, resistance R3, resistance R4, resistance R5, diode D1, diode D2, diode D3, electric capacity
C1 and electric capacity C2 composition.
During connection, the N pole of diode D1 is connected with the positive pole of amplifier P1, its P pole is then as this band
The input of bandpass filter circuit is also connected with outside signal collecting device.Resistance R2 is serially connected in amplifier
Between positive pole and the outfan of P1.The positive pole of electric capacity C1 is connected with the outfan of amplifier P1, its negative pole
Ground connection.Resistance R1 is serially connected between the negative pole of amplifier P1 and the negative pole of electric capacity C1.Zener diode D2
P pole be connected with the outfan of amplifier P1, its N pole then base stage with audion VT1 is connected.
The P pole of diode D3 is connected with the emitter stage of audion VT2, its N pole after resistance R3 with electric capacity
The negative pole of C1 is connected.Resistance R4 is serially connected in audion VT1 emitter stage and the input of deaccentuator
Between.The negative pole of electric capacity C2 is connected with the colelctor electrode of audion VT1, its plus earth.Resistance R5 goes here and there
It is connected between the colelctor electrode of audion VT2 and the positive pole of electric capacity C2.
Meanwhile, the base stage of described audion VT2 be connected with the colelctor electrode of audion VT1, its emitter stage warp
It is connected with the IN pin processing chip U after resistance R6.The positive pole of described electric capacity C2 is with electric capacity C5 just
Pole is connected.
It addition, this linear amplifier circuit is by amplifier P2, amplifier P3, audion VT3, resistance R9,
Resistance R10, resistance R11, electric capacity C6 and electric capacity C8 form.
During connection, the positive pole of electric capacity C6 with process chip U OUT pin be connected, its negative pole then with put
The negative pole of big device P3 is connected.Resistance R11 is serially connected in negative pole and the outfan of amplifier P3 of amplifier P2
Between.Resistance R10 is serially connected between the outfan of amplifier P2 and the positive pole of amplifier P3.Resistance R9
One end be connected with the positive pole of amplifier P2, its other end ground connection.The positive pole of electric capacity C8 and amplifier P2
Outfan be connected, its negative pole then colelctor electrode with audion VT3 is connected.Described audion VT3's
Base stage is connected with the outfan of amplifier P3, its grounded emitter.The outfan of described amplifier P2 is then
As the outfan of damned linear amplifier circuit and it is connected with external display device.Described amplifier P3's is defeated
Go out end to be also connected with the outfan of integrating circuit.
As in figure 2 it is shown, this deaccentuator is by audion VT4, audion VT5, field effect transistor MOS1,
Field effect transistor MOS2, resistance R12, resistance R13, resistance R14, resistance R15, resistance R16, resistance
R17, diode D6, diode D7, diode D8, electric capacity C9 and electric capacity C10 form.
During connection, resistance R12 is serially connected between base stage and the colelctor electrode of audion VT4.Diode D6's
P pole is connected with the base stage of audion VT4, its N pole then emitter stage with audion VT4 is connected.Electricity
Hold C9 negative pole be connected with the emitter stage of audion VT4, its positive pole after resistance R13 with field effect transistor
The grid of MOS2 is connected.Resistance R14 is serially connected between base stage and the emitter stage of audion VT5.Two poles
The P pole of pipe D7 is connected with the base stage of audion VT5, its N pole after resistance R16 with field effect transistor
The grid of MOS1 is connected.The N pole of diode D8 is connected with the grid of field effect transistor MOS2, its P
Pole is connected with the colelctor electrode of audion VT5.Resistance R17 is serially connected in source electrode and the field of field effect transistor MOS2
Between the source electrode of effect pipe MOS1.The positive pole of electric capacity C10 is connected with the drain electrode of field effect transistor MOS1,
Its negative pole emitter stage with audion VT5 after resistance R15 is connected.
Meanwhile, the base stage of described audion VT4 is as the input of this deaccentuator and through resistance R4
Afterwards the emitter stage with audion VT1 be connected, its grounded collector.The emitter stage of described audion VT5 with
The colelctor electrode of audion VT4 is connected.The drain electrode of described field effect transistor MOS2 is as this deaccentuator
Outfan and be connected with the negative pole of electric capacity C3.
As it is shown on figure 3, this integrating circuit is by audion VT6, audion VT7, resistance R18, resistance R19,
Resistance R20, resistance R21, resistance R22, resistance R23, diode D9, diode D10, diode
D11, electric capacity C11, electric capacity C12, electric capacity C13 and electric capacity C14 form.
During connection, one end of resistance R18 is connected with the P pole of diode D9, the then conduct of its other end should
The input of integrating circuit is also connected with the negative pole of electric capacity C7.The positive pole of electric capacity C12 is after resistance R19
Be connected with the P pole of diode D9, its negative pole is connected with the base stage of audion VT6.Diode D11
N pole be connected with the colelctor electrode of audion VT7, its P pole after resistance R21 with the N of diode D9
Pole is connected.The negative pole of electric capacity C13 is connected with the base stage of audion VT7, its positive pole is after resistance R20
It is connected with the N pole of diode D9.The P pole of diode D10 is connected with the N pole of diode D9,
Its N pole then colelctor electrode with audion VT6 is connected.Resistance R22 is serially connected in the current collection of audion VT6
Between the base stage of pole and audion VT7.The positive pole of electric capacity C11 is connected with the N pole of diode D9, it
Minus earth.The positive pole of electric capacity C14 is connected with the emitter stage of audion VT7, its minus earth.Resistance
One end of R23 is connected with the N pole of diode D11, its other end as this integrating circuit outfan also
It is connected with the outfan of amplifier P3.Meanwhile, the grounded emitter of described audion VT6；Described electric capacity
The positive pole of C13 is connected with the P pole of diode D11.
Interference signal in detection signal is isolated after being input to the present invention by detection signal by the present invention, and
The frequency of detection signal is corrected, and identifies high-frequency detection signal, the most again to high-frequency detection signal
After being amplified, outside display device is given in output；Meanwhile, the present invention can also be to ripple existing after processing
Dynamic high-frequency signal eliminates, thus improves the stability of output high-frequency signal；Such then can be accurately
Identify the high-frequency signal in detection signal, greatly improve the exploration precision of cymoscope.
As it has been described above, just can well implement the present invention.
Claims (6)
1. a frequency correction type high frequency demodulation system based on integrating circuit, it is characterised in that: mainly by
Reason chip U, bandwidth-limited circuit, it is serially connected between bandwidth-limited circuit and the IN pin processing chip U
Resistance R6, positive pole after resistance R7 with process chip U C1 pin be connected, negative pole connect respectively with place
The electric capacity C3 that is connected of GND pin of reason chip U, positive pole is connected with the C2 pin of process chip U,
Negative pole and the electric capacity C4 that is connected of GND pin processing chip U, and be serially connected in bandwidth-limited circuit and
Deaccentuator between the negative pole of electric capacity C3, P pole is connected with the C3 pin processing chip U, N
The diode D5 of pole ground connection, positive pole is connected with the F0 pin processing chip U, negative pole and diode D5
Electric capacity C7, the N pole that is connected, N pole be connected with the VCC pin processing chip U, P pole connects power supply
Diode D4, negative pole P pole with diode D4 after resistance R8 is connected, positive pole then with bandpass filtering
The electric capacity C5 that circuit is connected, the linear amplifier circuit being connected with the OUT pin processing chip U, with
And the integrating circuit composition being serially connected between negative pole and the linear amplifier circuit of electric capacity C7；Described process chip U
GND pin ground connection.
A kind of frequency correction type high frequency demodulation system based on integrating circuit the most according to claim 1,
It is characterized in that: described integrating circuit is by audion VT6, audion VT7, diode D9, one end and two
The P pole of pole pipe D9 is connected, the other end is then as the resistance R18 of input of this integrating circuit, positive pole warp
The electricity that after resistance R19, the P pole with diode D9 is connected, negative pole is connected with the base stage of audion VT6
Hold C12, N pole be connected with the colelctor electrode of audion VT7, P pole after resistance R21 with diode D9
The diode D11 that is connected of N pole, negative pole is connected with the base stage of audion VT7, positive pole is through resistance
Electric capacity C13, the P pole being connected with the N pole of diode D9 after R20 is connected with the N pole of diode D9,
The diode D10 that N pole then colelctor electrode with audion VT6 is connected, is serially connected in the current collection of audion VT6
Resistance R22 between the base stage of pole and audion VT7, positive pole is connected with the N pole of diode D9, bears
The electric capacity C11 of pole ground connection, positive pole is connected with the emitter stage of audion VT7, the electric capacity C14 of minus earth,
And one end is connected with the N pole of diode D11, the other end is as the resistance of the outfan of this integrating circuit
R23 forms；The grounded emitter of described audion VT6；The positive pole of described electric capacity C13 and diode D11
P pole be connected；The input of described integrating circuit is connected with the negative pole of electric capacity C7, its outfan then with
Linear amplifier circuit is connected.
A kind of frequency correction type high frequency demodulation system based on integrating circuit the most according to claim 2,
It is characterized in that: described deaccentuator by audion VT4, audion VT5, field effect transistor MOS1,
Field effect transistor MOS2, resistance R12, the P pole being serially connected between base stage and the colelctor electrode of audion VT4 with
The diode D6 that the base stage of audion VT4 is connected, N pole then emitter stage with audion VT4 is connected,
Negative pole is connected with the emitter stage of audion VT4, positive pole after resistance R13 with the grid of field effect transistor MOS2
The electric capacity C9 that pole is connected, resistance R14, the P pole being serially connected between base stage and the emitter stage of audion VT5
Be connected with the base stage of audion VT5, N pole grid with field effect transistor MOS1 after resistance R16 is connected
Diode D7, the N pole connect is connected with the grid of field effect transistor MOS2, the collection of P pole and audion VT5
The diode D8 that electrode is connected, is serially connected in the source electrode of field effect transistor MOS2 and the source of field effect transistor MOS1
Resistance R17 between pole, and positive pole is connected with the drain electrode of field effect transistor MOS1, negative pole is through resistance R15
The electric capacity C10 composition that emitter stage with audion VT5 is connected afterwards；The base stage conduct of described audion VT4
The input of this deaccentuator and be connected with bandwidth-limited circuit, its grounded collector；Described three poles
The emitter stage of pipe VT5 is connected with the colelctor electrode of audion VT4；The drain electrode of described field effect transistor MOS2 is made
For the outfan of this deaccentuator and it is connected with the negative pole of electric capacity C3.
A kind of frequency correction type high frequency demodulation system based on integrating circuit the most according to claim 3,
It is characterized in that: described bandwidth-limited circuit is by amplifier P1, audion VT1, audion VT2, N pole
Be connected with the positive pole of amplifier P1, P pole then as the diode D1 of input of this bandwidth-limited circuit,
It is serially connected in the resistance R2 between positive pole and the outfan of amplifier P1, the outfan phase of positive pole and amplifier P1
Connection, the electric capacity C1 of minus earth, be serially connected in the electricity between the negative pole of amplifier P1 and the negative pole of electric capacity C1
Resistance R1, P pole is connected with the outfan of amplifier P1, N pole then base stage with audion VT1 is connected
Zener diode D2, P pole be connected with the emitter stage of audion VT2, N pole after resistance R3 with electricity
Hold the diode D3 that is connected of negative pole of C1, be serially connected in audion VT1 emitter stage and deaccentuator
Resistance R4 between input, negative pole is connected with the colelctor electrode of audion VT1, the electric capacity of plus earth
C2, and the resistance R5 composition being serially connected between the colelctor electrode of audion VT2 and the positive pole of electric capacity C2；Institute
The colelctor electrode of the base stage and audion VT1 of stating audion VT2 is connected, its emitter stage after resistance R6 with
The IN pin processing chip U is connected；The positive pole of described electric capacity C2 is connected with the positive pole of electric capacity C5.
A kind of frequency correction type high frequency demodulation system based on integrating circuit the most according to claim 4,
It is characterized in that: described linear amplifier circuit by amplifier P2, amplifier P3, audion VT3, positive pole with
Process the electric capacity C6 that OUT pin is connected, negative pole then negative pole with amplifier P3 is connected of chip U,
The resistance R11 being serially connected between the negative pole of amplifier P2 and the outfan of amplifier P3, is serially connected in amplifier
Resistance R10 between outfan and the positive pole of amplifier P3 of P2, one end is connected with the positive pole of amplifier P2
Connect, the resistance R9 of other end ground connection, and positive pole is connected with the outfan of amplifier P2, negative pole then with
The electric capacity C8 composition that the colelctor electrode of audion VT3 is connected；The base stage of described audion VT3 and amplifier
The outfan of P3 is connected, its grounded emitter；The outfan of described amplifier P2 is then linearly put as damned
The outfan of big circuit；The outfan of described amplifier P3 is also connected with the outfan of integrating circuit.
A kind of frequency correction type high frequency demodulation system based on integrating circuit the most according to claim 5,
It is characterized in that: described process chip U is the integrated chip of CX20106A.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610369601.9A CN105891879A (en) | 2016-05-28 | 2016-05-28 | Integral circuit-based frequency correction type high-frequency detection system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610369601.9A CN105891879A (en) | 2016-05-28 | 2016-05-28 | Integral circuit-based frequency correction type high-frequency detection system |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105891879A true CN105891879A (en) | 2016-08-24 |
Family
ID=56709121
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610369601.9A Pending CN105891879A (en) | 2016-05-28 | 2016-05-28 | Integral circuit-based frequency correction type high-frequency detection system |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105891879A (en) |
-
2016
- 2016-05-28 CN CN201610369601.9A patent/CN105891879A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104410942A (en) | Phase shift type audio processing system by low-pass filtering and amplification | |
| CN106253868A (en) | Blowdown net monitoring device differential amplification type signal processing systems based on big data | |
| CN105974958A (en) | High-precision signal acquisition and processing system for digital temperature controller | |
| CN104506141A (en) | Band-pass filtering oscillating system based on linear driving | |
| CN105891879A (en) | Integral circuit-based frequency correction type high-frequency detection system | |
| CN105891880A (en) | High-frequency detection system | |
| CN105953913A (en) | High-frequency detection system based on frequency correction circuit | |
| CN105954794A (en) | Voltage-controlled oscillation type high frequency demodulation system based on integrating circuit | |
| CN205754253U (en) | A kind of mixing tuner-type signal processing system based on signal frequency correcting circuit | |
| CN106301374A (en) | Blowdown net monitoring device anti-interference type signal processing systems based on big data | |
| CN105871355A (en) | High-frequency detection system based on integral circuit | |
| CN105954793A (en) | High frequency demodulation system based on voltage-controlled oscillation circuit | |
| CN104464748A (en) | Filter-frequency-adjustable audio processing system based on linear driving | |
| CN105847716A (en) | Signal amplification type high-definition image signal processing system based on current-constant source circuit | |
| CN106253857A (en) | Blowdown net monitoring device Bandwidth adjustment type signal processing systems based on big data | |
| CN105547940A (en) | Shaping type intelligent monitoring system based on signal adjusting circuit and used for air purifier | |
| CN104967330A (en) | High-frequency conversion demodulation system based on surge current limiting type low heat | |
| CN104683659A (en) | Audion common emitter amplifying circuit-based high-precision image processing system | |
| CN105974959A (en) | Electronic temperature controller signal processing system based on low pass filter circuit | |
| CN106385237A (en) | Highly-stable signal processing system for sewage discharging network monitoring device based on big data | |
| CN204332357U (en) | Based on the adjustable frequency filtering audio frequency processing system of Linear Driving | |
| CN204316736U (en) | A kind of phase shift low-pass filtering amplifies audio frequency processing system | |
| CN105342612A (en) | Meridian and collateral detector data acquisition system based on signal differential amplification circuit | |
| CN105872412A (en) | Constant-current high-definition image signal processing system based on electromagnetic noise reducing circuit | |
| CN105872417A (en) | Signal amplification type high-definition image signal processing system based on electromagnetic noise reduction circuit |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20160824 |