CN105885850A - Etchant Composition And Method Of Forming A Transparant Electrode - Google Patents
Etchant Composition And Method Of Forming A Transparant Electrode Download PDFInfo
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- CN105885850A CN105885850A CN201610079608.7A CN201610079608A CN105885850A CN 105885850 A CN105885850 A CN 105885850A CN 201610079608 A CN201610079608 A CN 201610079608A CN 105885850 A CN105885850 A CN 105885850A
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- Prior art keywords
- sulfonic acid
- acid chloride
- compounds
- compound
- chloride
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- 239000000203 mixture Substances 0.000 title claims abstract description 19
- 238000000034 method Methods 0.000 title claims abstract description 18
- 238000005530 etching Methods 0.000 claims abstract description 61
- 229910003437 indium oxide Inorganic materials 0.000 claims abstract description 29
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims abstract description 29
- 150000001875 compounds Chemical class 0.000 claims abstract description 18
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 11
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910017604 nitric acid Inorganic materials 0.000 claims abstract description 9
- -1 sulfonic acid chloride compounds Chemical class 0.000 claims description 61
- 239000003795 chemical substances by application Substances 0.000 claims description 30
- 239000002131 composite material Substances 0.000 claims description 28
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 20
- 229910052801 chlorine Inorganic materials 0.000 claims description 20
- 239000000460 chlorine Substances 0.000 claims description 20
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 claims description 14
- 150000003851 azoles Chemical class 0.000 claims description 14
- 239000000126 substance Substances 0.000 claims description 14
- 229920002120 photoresistant polymer Polymers 0.000 claims description 11
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 8
- KMVZDSQHLDGKGV-UHFFFAOYSA-N 2-chlorobenzenesulfonyl chloride Chemical compound ClC1=CC=CC=C1S(Cl)(=O)=O KMVZDSQHLDGKGV-UHFFFAOYSA-N 0.000 claims description 6
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 claims description 6
- 150000003852 triazoles Chemical class 0.000 claims description 6
- 125000001340 2-chloroethyl group Chemical class [H]C([H])(Cl)C([H])([H])* 0.000 claims description 5
- 150000001338 aliphatic hydrocarbons Chemical class 0.000 claims description 5
- 150000004945 aromatic hydrocarbons Chemical class 0.000 claims description 5
- FRYHCSODNHYDPU-UHFFFAOYSA-N ethanesulfonyl chloride Chemical compound CCS(Cl)(=O)=O FRYHCSODNHYDPU-UHFFFAOYSA-N 0.000 claims description 5
- 150000002545 isoxazoles Chemical class 0.000 claims description 5
- 229910044991 metal oxide Inorganic materials 0.000 claims description 5
- 150000004706 metal oxides Chemical class 0.000 claims description 5
- OAHKWDDSKCRNFE-UHFFFAOYSA-N phenylmethanesulfonyl chloride Chemical compound ClS(=O)(=O)CC1=CC=CC=C1 OAHKWDDSKCRNFE-UHFFFAOYSA-N 0.000 claims description 5
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 5
- PQODWTNHDKDHIW-UHFFFAOYSA-N 2,3-dichlorobenzenesulfonyl chloride Chemical compound ClC1=CC=CC(S(Cl)(=O)=O)=C1Cl PQODWTNHDKDHIW-UHFFFAOYSA-N 0.000 claims description 4
- QARBMVPHQWIHKH-UHFFFAOYSA-N methanesulfonyl chloride Chemical compound CS(Cl)(=O)=O QARBMVPHQWIHKH-UHFFFAOYSA-N 0.000 claims description 4
- DRINJBFRTLBHNF-UHFFFAOYSA-N propane-2-sulfonyl chloride Chemical compound CC(C)S(Cl)(=O)=O DRINJBFRTLBHNF-UHFFFAOYSA-N 0.000 claims description 4
- 239000012359 Methanesulfonyl chloride Substances 0.000 claims description 3
- FZWLAAWBMGSTSO-UHFFFAOYSA-N Thiazole Chemical compound C1=CSC=N1 FZWLAAWBMGSTSO-UHFFFAOYSA-N 0.000 claims 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical group [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- NJWNEWQMQCGRDO-UHFFFAOYSA-N indium zinc Chemical compound [Zn].[In] NJWNEWQMQCGRDO-UHFFFAOYSA-N 0.000 claims 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 150000003557 thiazoles Chemical class 0.000 claims 1
- YBBRCQOCSYXUOC-UHFFFAOYSA-N sulfuryl dichloride Chemical class ClS(Cl)(=O)=O YBBRCQOCSYXUOC-UHFFFAOYSA-N 0.000 abstract 1
- 230000000052 comparative effect Effects 0.000 description 7
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 6
- 230000003628 erosive effect Effects 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000002253 acid Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- ULRPISSMEBPJLN-UHFFFAOYSA-N 2h-tetrazol-5-amine Chemical compound NC1=NN=NN1 ULRPISSMEBPJLN-UHFFFAOYSA-N 0.000 description 2
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 2
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical compound C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 235000006408 oxalic acid Nutrition 0.000 description 2
- FGIUAXJPYTZDNR-UHFFFAOYSA-N potassium nitrate Chemical compound [K+].[O-][N+]([O-])=O FGIUAXJPYTZDNR-UHFFFAOYSA-N 0.000 description 2
- XZGLNCKSNVGDNX-UHFFFAOYSA-N 5-methyl-2h-tetrazole Chemical compound CC=1N=NNN=1 XZGLNCKSNVGDNX-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 239000005864 Sulphur Substances 0.000 description 1
- 208000027418 Wounds and injury Diseases 0.000 description 1
- 238000003915 air pollution Methods 0.000 description 1
- 238000006701 autoxidation reaction Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000005470 impregnation Methods 0.000 description 1
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 208000014674 injury Diseases 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- XJPANWOKBWZVHC-UHFFFAOYSA-N tetrazol-2-amine Chemical compound NN1N=CN=N1 XJPANWOKBWZVHC-UHFFFAOYSA-N 0.000 description 1
- 229930192474 thiophene Natural products 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
- H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Weting (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Manufacturing Of Electric Cables (AREA)
Abstract
The invention discloses an etchant composition for etching an indium oxide layer and a method for forming a transparant electrode. The etchant composition comprises 5-10wt% of nitric acid, 0.5-5wt% of sulfonyl chloride compounds, 0.1-5wt% of cyclammonium compounds, and balance being water. A thick indium oxide layer is etched for forming a transparent electrode layer with a low resistance, and the etchant composition can sufficiently improve etching rate without residue, and can increase the process efficiency.
Description
Technical field
The present invention relates to etching agent composite and use its method forming transparency electrode.
Background technology
Indium oxide layer, particularly indium zinc oxide (IZO) layer or tin indium oxide (ITO) layer, with
Formed on the circuit board of any electronic unit and accordingly act as transparency electrode.IZO or transparent
Electrode generally uses sputtering technology etc. to be formed on insulated substrate, then coats with photoresist,
It is followed by exposed and developed, therefore forms photoresist pattern, use photoresist figure afterwards
Case etching indium oxide layer.
Owing to the chemical resistance of indium oxide layer is good, it is difficult to etching.In order to etch indium oxide layer, Korea Spro
State's patent application publication number 1997-0065685 discloses and includes hydrochloric acid and appointing in weak acid and alcohol
What etchant of one, and Korean Patent Publication No 2000-0017470 disclose mainly by
The etchant that oxalic acid and salt or aluminium chloride thereof form.Although the etchant including oxalic acid is conducive to etching,
But it has low solubility at low temperatures, undesirably causes deposition.Further, including hydrogen
The etchant changing iodine (HI) has high etch-rate and low lateral erosion, but expensive, and toxicity is high,
High with corrosivity.Therefore, the application of real process is limited by this type of etchant.
Further, traditional etchant has high chemism and may cause during etching and have difference
Chemical-resistant adjacent metal such as molybdenum (Mo), aluminium (Al), or the corrosion of chromium (Cr) etc..
Also it is such when etching includes the sandwich construction of any of the above-described metal.And, containing the erosion of hydrochloric acid
It is inflammable for carving agent, undesirably causes air pollution problems inherent due to smog, thus causes high throwing
Money cost also causes unsafe working environment.
The etching agent composite needing exploitation to have etching performance makes to prevent when etching indium oxide layer
Produce residue and prevent the corrosion (lower floor is damaged) of adjacent metal, and making etch-rate quilt
Fully improve.
[reference listing]
[patent document]
Patent document 1: Korean Patent Publication No 1997-0065685
Patent document 2: Korean Patent Publication No 2000-0017470
Summary of the invention
Therefore, the purpose of the present invention is for providing etching agent composite, wherein when etching indium oxide layer,
Do not produce residue and can fully improve etch-rate, (big when the thick indium oxide layer of etching especially
In being equal to) time its can fully improve etch-rate do not produce residue with formed have low
The transparent electrode layer of resistance.
In order to achieve the above object, the present invention is provided to etch the etching agent composite of indium oxide layer,
Including: the nitric acid of 5-10wt%, the sulfonic acid chloride compounds of 0.5-5wt%, the cycloamination of 0.1-5wt%
Compound, and the water of remainder.
In embodiments of the present invention, sulfonic acid chloride compounds can be to have by formula 1 below
The compound of the structure represented:
[chemical formula 1]
In chemical formula 1, R is the C1-C6 aliphatic hydrocarbon not replaced by chlorine or being replaced by chlorine, or not by
The C6-C10 aromatic hydrocarbons that chlorine replaces or replaced by chlorine.
In another embodiment of the present invention, sulfonic acid chloride compounds can include selecting free first sulphur
Acyl chlorides, ethyl sulfonic chloride, chlorobenzenesulfonyl chloride, benzyl sulfonic acid chloride, chloroethanes sulfonic acid chloride, isopropyl sulphur
Acyl chlorides, at least one in the third sulfonic acid chloride, and the group of dichlorobenzene sulfonic acid chloride composition.
In a further embodiment of the present invention, cyclic amine compound can include selecting free pyroles
Compound, pyrazole compound, glyoxaline compound, triazole class compounds, tetrazole compound,
Five azole compounds, azole compounds, isoxazole compounds, thiazole compound, and different
At least one in the group of thiazole compound composition.
In the further embodiment of the present invention, indium oxide layer can be indium zinc oxide (IZO) layer or
Tin indium oxide (ITO) layer.
Additionally, the present invention provides the method forming transparency electrode, including: formed on substrate and include
The transparent electrode layer of metal oxide；Transparent electrode layer is formed photoresist pattern；With make
Use the nitric acid including 5-10wt%, the sulfonic acid chloride of 0.5-5wt% as mask with photic Resist patterns
The etching agent composite erosion of compounds, the cyclic amine compound of 0.1-5wt%, and the water of remainder
The transparent electrode layer of metal oxide is included described in quarter.
In an embodiment of the present invention, sulfonic acid chloride compounds can be to have by formula 1 below table
The compound of the structure shown:
[chemical formula 1]
In chemical formula 1, R is the C1-C6 aliphatic hydrocarbon not replaced by chlorine or being replaced by chlorine, or not
The C6-C10 aromatic hydrocarbons replaced by chlorine or replaced by chlorine.
In another embodiment of the invention, sulfonic acid chloride compounds can include selecting free methylsulfonyl
Chlorine, ethyl sulfonic chloride, chlorobenzenesulfonyl chloride, benzyl sulfonic acid chloride, chloroethanes sulfonic acid chloride, isopropyl sulphonyl
Chlorine, at least one in the third sulfonic acid chloride, and the group of dichlorobenzene sulfonic acid chloride composition.
In one more embodiment of the present invention, cyclic amine compound can include selecting free pyroles chemical combination
Thing, pyrazole compound, glyoxaline compound, triazole class compounds, tetrazole compound, five
Azole compounds, azole compounds, isoxazole compounds, thiazole compound, and different thiophene
At least one in the group of azole compounds composition.
In yet another embodiment of the present invention, transparent electrode layer can include indium zinc oxide or oxidation
Indium tin.
According to the present invention, when the thick indium oxide layer of etching (is more than or equal to) time, etchant group
Compound can fully increase etch-rate and be prevented from the generation of residue with formed have low-resistance
Transparent electrode layer, therefore improves working (machining) efficiency.
Accompanying drawing explanation
From describe in detail below in conjunction with accompanying drawing, the above and other purpose of the present invention, feature and excellent
Point will be more clearly understood, wherein:
Fig. 1 illustrates the residue test result and to lower floor when using the etching agent composite of embodiment 1
Infringement；
Fig. 2 illustrates the residue test result and to lower floor when using the etching agent composite of embodiment 2
Infringement；
Fig. 3 illustrates the residue test result and to lower floor when using the etching agent composite of comparative example 1
Infringement；
Fig. 4 illustrates the residue test result and to lower floor when using the etching agent composite of comparative example 2
Infringement.
Detailed description of the invention
The present invention relates to the etching agent composite for etching indium oxide layer, including the nitre of 5-10wt%
Acid, the sulfonic acid chloride compounds of 0.5-5wt%, the cyclic amine compound of 0.1-5wt%, and remainder
Water, and it is directed to use with its method forming transparency electrode.
The etching agent composite of the present invention comprises sulfonic acid chloride compounds, thereby increases etching oxidation
The speed of indium layer also controls the generation of residue.
Hereinafter, the detailed description of the present invention will be provided.
The present invention proposes the etching agent composite for etching indium oxide layer, including the nitre of 5-10wt%
Acid, the sulfonic acid chloride compounds of 0.5-5wt%, the cyclic amine compound of 0.1-5wt%, and remainder
Water.
In the present invention, nitric acid is the main one-tenth of the composition for etching the indium oxide layer including indium
Point, for oxidation and therefore wet etching indium oxide layer and be used for increase be included in etching agent composite
The activity of sulfonic acid chloride compounds.Here, nitric acid is preferably used based on etching agent composite total
Amount is the amount of 5-10wt%.If the amount of nitric acid is less than 5wt%, etch capabilities is deteriorated, and may
Do not occur fully to etch or etch-rate may be substantially reduced.On the other hand, if its amount exceedes
9wt%, photoresist may split, and undesirably causes short circuit in pattern and to lower metal
The infringement of line.
In the present invention, sulfonic acid chloride compounds is used for increasing indium oxide layer etch-rate and removing erosion
Carve residue the indium oxide layer of etching thickness the most effectively.Sulfonic acid chloride compounds is preferably used based on erosion
Carve the amount that total amount is 0.5-5wt% of agent composition.If the amount of sulfonic acid chloride compounds is less than
During 0.5wt%, the speed of etching indium oxide may be reduced, and therefore may produce during the process time
The residue of autoxidation indium layer from birth.On the other hand, if its amount is more than 5wt%, possible over etching
Indium oxide layer, maybe may infringement lower metal layer.
Sulfonic acid chloride compounds can be the compound with the structure represented by formula 1 below:
[chemical formula 1]
In chemical formula 1, R is the C1-C6 aliphatic hydrocarbon not replaced by chlorine or being replaced by chlorine, or not by
The C6-C10 aromatic hydrocarbons that chlorine replaces or replaced by chlorine.
Such as, sulfonic acid chloride compounds can include selecting free mesyl chloride, ethyl sulfonic chloride, chloro
Benzene sulfonyl chloride, benzyl sulfonic acid chloride, chloroethanes sulfonic acid chloride, isopropyl sulphonyl chloride, the third sulfonic acid chloride, and two
At least one in the group of chlorobenzenesulfonyl chloride composition.
In the present invention, it is made up of Cu, Al, Mo, or Ti when being provided with under layer to be etched
During lower floor, cyclic amine compound can reduce due to the etchant infringement to lower floor.Cyclic amine compound is preferred
The amount using total amount based on etching agent composite to be 0.1-5wt%.If the amount of cyclic amine compound is few
When 0.1wt%, it is difficult to reduce the injury to lower floor.On the other hand, if its amount is more than 5wt%,
The activity of sulfonic acid chloride compounds, and the therefore possible etch capabilities deteriorating indium oxide layer may be reduced,
Undesirably increase the generation of residue after etching indium oxide layer and reduce etch-rate.
Cyclic amine compound can include selecting free azoles, pyrazole compound, imidazoles
Compound, triazole class compounds, tetrazole compound, five azole compounds, azole compounds,
Isoxazole compounds, in thiazole compound, and the group of different thiazoles compound composition at least
A kind of.Preferably, triazole class compounds is as a example by BTA, and tetrazole compound includes
Selected from 5-Aminotetrazole, 3-Aminotetrazole, 5-methyl tetrazolium, and at least one in 5-Aminotetrazole.
It is especially useful that BTA.
According to etching agent composite of the present invention, the preferred deionized water of water, it is suitable for use in
In semiconductor machining, there is 18M Ω/cm or higher.The water yield used makes the total amount of composition to be
100wt%.
Further it is proposed that the method forming transparency electrode, it is included on substrate formation and includes gold
Belong to the transparent electrode layer of oxide, transparent electrode layer is formed photoresist pattern, and uses
Photoresist pattern uses the nitric acid including 5-10wt% as mask, the sulfonic acid chloride class of 0.5-5wt%
The etching agent composite etching of compound, the cyclic amine compound of 0.1-5wt%, and the water of remainder
The described transparent electrode layer including metal oxide.
In the present invention, transparency electrode can serve as the pixel electrode of ordinary electrode or display device,
And transparent electrode layer can be formed by any material (as long as material is conductible), and preferably
Including indium zinc oxide or tin indium oxide.
The formation of transparent electrode layer can be completed by any technique known in this field any,
Etching agent composite in etching step can use spray technology, impregnation technology etc. to be employed.
The present invention is described by following example, comparative example and test case, and it is merely illustrative
The present invention, but the invention is not restricted to described embodiment, comparative example and test case, and may be various
Modifications and changes.
Embodiment 1-4 and the preparation of comparative example 1-6: etching agent composite
The amount using the component shown in table 1 below prepares etching agent composite.
Table 1
Test case: etching performance is assessed
Indium oxide layer is applied on substrate, be engraved on substrate formation by light and there is predetermined pattern
Photoresist, then each composition etching of use table 1 includes the substrate of indium oxide layer.
In etching process, use injection etching machine (ETCHER (TFT), SEMES manufacture),
And the temperature of etching agent composite is set to about 40 DEG C.Etching period about 120s.Make electricity consumption
The indium oxide of etching in etching process observed by sub-microscope (SU-8010 is manufactured by HITACHI)
The profile of layer.
(1) test of etch-rate
Measure etch-rate by by the thickness of indium oxide layer divided by completing lateral etches until expose the end
The cycle of portion's required time determines.Result is as shown in the following Table 2.
<evaluation criteria>
Outstanding: to be more than or equal to
Good:To being less than
Difference: be less than
(2) test of residue
Indium oxide layer whether is had to be left on the position that photoresist is had not yet been formed after having tested etching
The bottom put.Result is as shown in table 2 below and Fig. 1-4.
(3) assessment to lower floor's infringement
Assessment uses the etching agent composite etching of each embodiment 1-4 and comparative example 1-6 to be used as lower floor
Aluminium base, and assess the infringement to substrate.Result is as shown in table 2 below and Fig. 1-4.
Table 2
From table 2 with Fig. 1-4 it is evident that compared with comparative example 1-6, embodiment 1-4 does not stays residue, right
Lower floor does not causes infringement, and shows the etch-rate of excellence.
Although disclosed the preferred embodiments of the present invention are for illustration purposes, but those skilled in the art
It should be understood that repair without departing substantially from the various of the scope and spirit of the present invention as disclosed in claims
It is possible for changing, adding and replacing.
Claims (10)
1. for etching the etching agent composite of indium oxide layer, including:
The nitric acid of 5-10wt%,
The sulfonic acid chloride compounds of 0.5-5wt%,
The cyclic amine compound of 0.1-5wt%, and
The water of remainder.
Etching agent composite the most according to claim 1, wherein, described sulfonic acid chloride class chemical combination
Thing is the compound with the structure represented by formula 1 below:
In chemical formula 1, R is the C1-C6 aliphatic hydrocarbon not replaced by chlorine or being replaced by chlorine, or not
The C6-C10 aromatic hydrocarbons replaced by chlorine or replaced by chlorine.
Etching agent composite the most according to claim 1, wherein, described sulfonic acid chloride class chemical combination
Thing includes selecting free mesyl chloride, ethyl sulfonic chloride, chlorobenzenesulfonyl chloride, benzyl sulfonic acid chloride, chloroethanes
Sulfonic acid chloride, isopropyl sulphonyl chloride, in the third sulfonic acid chloride, and the group of dichlorobenzene sulfonic acid chloride composition extremely
Few one.
Etching agent composite the most according to claim 1, wherein, described cyclic amine compound bag
Include and select free azoles, pyrazole compound, glyoxaline compound, triazole class compounds,
Tetrazole compound, five azole compounds, azole compounds, isoxazole compounds, thiazole
At least one in compounds, and the group of different thiazoles compound composition.
Etching agent composite the most according to claim 1, wherein, described indium oxide layer is oxygen
Change indium zinc layers or indium tin oxide layer.
6. the method forming transparency electrode, including:
Substrate is formed the transparent electrode layer including metal oxide；
Described transparent electrode layer is formed photoresist pattern；With
Photoresist pattern is used to use the nitric acid including 5-10wt%, 0.5-5wt% as mask
Sulfonic acid chloride compounds, the cyclic amine compound of 0.1-5wt%, and the etchant of the water of remainder
The transparent electrode layer of metal oxide is included described in composition etching.
Method the most according to claim 6, wherein, described sulfonic acid chloride compounds is for having
The compound of the structure represented by formula 1 below:
In chemical formula 1, R is the C1-C6 aliphatic hydrocarbon not replaced by chlorine or being replaced by chlorine, or not
The C6-C10 aromatic hydrocarbons replaced by chlorine or replaced by chlorine.
Method the most according to claim 6, wherein, described sulfonic acid chloride compounds includes choosing
Free mesyl chloride, ethyl sulfonic chloride, chlorobenzenesulfonyl chloride, benzyl sulfonic acid chloride, chloroethanes sulfonic acid chloride,
Isopropyl sulphonyl chloride, at least one in the third sulfonic acid chloride, and the group of dichlorobenzene sulfonic acid chloride composition.
Method the most according to claim 6, wherein, described cyclic amine compound includes that choosing is freely
Azoles, pyrazole compound, glyoxaline compound, triazole class compounds, four azoles
Compound, five azole compounds, azole compounds, isoxazole compounds, thiazoles chemical combination
At least one in thing, and the group of different thiazoles compound composition.
Method the most according to claim 6, wherein, described transparent electrode layer includes indium oxide
Zinc or tin indium oxide.
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| KR10-2015-0023184 | 2015-02-16 | ||
| KR1020150023184A KR102245555B1 (en) | 2015-02-16 | 2015-02-16 | Etchant composition and method of forming a transparant electrode |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| KR970065685A (en) | 1996-03-29 | 1997-10-13 | 구자홍 | Composition for ITO etching |
| KR20000017470A (en) | 1998-08-18 | 2000-03-25 | 이기원 | ITO etchant composition |
| KR101702129B1 (en) * | 2010-05-20 | 2017-02-06 | 동우 화인켐 주식회사 | Manufacturing method of an array substrate for liquid crystal display |
| KR101728553B1 (en) * | 2010-12-21 | 2017-04-20 | 동우 화인켐 주식회사 | Etching solution composition for ohmic contact layer |
| KR101394133B1 (en) * | 2012-08-22 | 2014-05-15 | 주식회사 이엔에프테크놀로지 | Etchant composition for molybdenum alloy layer and indium oxide layer |
| TW201410917A (en) * | 2012-09-03 | 2014-03-16 | Dongwoo Fine Chem Co Ltd | Echtant and method for manufacturing display device using the same |
| KR101527117B1 (en) * | 2013-06-27 | 2015-06-09 | 삼성디스플레이 주식회사 | Etchant and manufacturing method of metal wiring and thin film transistor substrate using the same |
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| KR102245555B1 (en) | 2021-04-28 |
| TW201634667A (en) | 2016-10-01 |
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Application publication date: 20160824 |