CN105870322A - Aluminum-based thin film memristor having self-studying function and fabrication method of aluminum-based thin film memristor - Google Patents
Aluminum-based thin film memristor having self-studying function and fabrication method of aluminum-based thin film memristor Download PDFInfo
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- CN105870322A CN105870322A CN201610256599.4A CN201610256599A CN105870322A CN 105870322 A CN105870322 A CN 105870322A CN 201610256599 A CN201610256599 A CN 201610256599A CN 105870322 A CN105870322 A CN 105870322A
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- self
- memristor
- thin film
- aluminum
- learning function
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/884—Other compounds of groups 13-15, e.g. elemental or compound semiconductors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of the switching material, e.g. layer deposition
- H10N70/026—Formation of the switching material, e.g. layer deposition by physical vapor deposition, e.g. sputtering
Abstract
The invention discloses an aluminum-based thin film memristor having a self-studying function and a fabrication method of the aluminum-based thin film memristor. A metal bottom electrode is sequentially deposited on a silicon wafer or other substrates (quartz or plastics); during I-V or V-I scanning test, the memristor displays different resistance states and can cope with different memory stages; and during pulse voltage test, the resistance value of the memristor is gradually reduced with the increase of a pulse voltage and is basically maintained unchanged in a specific resistance state, and thus, the self-studying function is shown. The aluminum-based thin film memristor possesses the stable self-studying function and can stably run for 30 years in 85 DEG C, and the current industrial demand is satisfied.
Description
[technical field]
The invention belongs to field of semiconductor devices, be specifically related to a kind of aluminum based film memristor with self-learning function
And preparation method thereof.
[background technology]
The embodiment of self-learning function is that this device can realize the change in resistance of correspondence along with executing alive change.
Realizing of this function is significant for the research work of memristor simulating human nerve synapse function.?
Early propose the people of memristor concept, be scientist Cai Shaotang of Chinese origin, taught at that time in the Berkeley university of the U.S..
Time is 1971, when studying electric charge, electric current, relation between voltage and magnetic flux, teaches in California
Professor Cai of university's Berkeley infers outside resistance, electric capacity and inducer, it should also have a kind of assembly,
Represent the relation between electric charge and magnetic flux.The effect of this assembly, it is simply that its resistance can be along with passing through
The magnitude of current and change, even and if electric current stopped, its resistance still can rest on before value, until connect
By reverse electric current, it just can be pushed back.Memristor is a kind of nonlinear resistance having memory function.Pass through
The change controlling electric current can change its resistance, if high value is defined as " 1 ", low resistance is defined as " 0 ",
The most this resistance just can realize storing the function of data.It is actually a non-linear electricity having memory function
Resistance device.Owing to memristor size is little, energy consumption is low, so can store well and process information.One memristor
Workload, be equivalent to the effectiveness that in one piece of cpu chip, ten several transistors produce jointly.Research worker claims,
Memristor can allow mobile phone without charging after using several weeks or more long time, it is possible to makes notebook computer at battery electricity
Amount for a long time remains to preservation information after exhausting.Memristor is also expected to challenge the flash memory commonly used in digital equipment, because of
Stored ability still can be protected after there is closedown power supply for it.Utilize the chip that this new discovery is made, will compare
Flash memory preserves information quickly, consumes less electric power, takies less space.
[summary of the invention]
It is an object of the invention to the shortcoming overcoming above-mentioned prior art, it is provided that a kind of aluminum base with self-learning function
Thin film memristor and preparation method thereof.
For reaching above-mentioned purpose, the present invention is achieved by the following technical solutions:
A kind of aluminum based film memristor with self-learning function, including substrate, substrate sets gradually metal bottom electricity
Pole and metallic top electrode, be provided with active layer between metallic bottom electrode and metallic top electrode.
The present invention is further improved by:
Described substrate is quartz substrate, PET substrate or silicon chip substrate.
The thickness of described metallic bottom electrode is 300～500nm.
The material of described metallic bottom electrode uses Ti, Al, Cu, Ti, Ni or Ag.
Described active layer is the AlO being deposited in metallic bottom electrodexNyThin film or AlN thin film, AlOxNyThin film
Or the thickness of AlN thin film is 10～30nm, wherein x:y is (0.5～2): 1.
The thickness of described metallic top electrode is 300～500nm.
The material of described metallic top electrode uses Ti, Al, Cu, Ti, Ni or Ag.
The preparation method of a kind of aluminum based film memristor with self-learning function, comprises the following steps:
1) in quartz substrate, PET substrate or silicon chip substrate, depositing a layer thickness with ion beam evaporation methods is
The metallic bottom electrode of 300～500nm；
2) magnetron sputtering technique is utilized to deposit the AlO that a layer thickness is 10～30nm in metallic bottom electrodexNy
Thin film or AlN thin film；
3) at AlOxNyUtilize ion beam evaporation methods and mask to deposit a layer thickness on thin film or AlN thin film to be
The metallic top electrode of 500nm.
The present invention is further improved by:
Described step 1) and 3) in, the material of metallic bottom electrode and metallic top electrode all use Ti, Al, Cu,
Ti, Ni or Ag.
Described step 2) in, in the corresponding chambers of magnetron sputtering coater, being passed through volume ratio is 45:15sccm
Argon and the mixed gas of nitrogen, set vacuum 10～6Torr, plated film stablizes air pressure 0.5～1Pa；Target
The aluminum target selecting purity to be 99.99%.
Compared with prior art, the method have the advantages that
The present invention is sequentially depositing metallic bottom electrode, when carrying out I-V on silicon chip or other substrates (quartz, plastics)
Or during V-I sweep test, this memristor demonstrates different resistance value state, it is possible to corresponding different memory stage.
And when carrying out pulse voltage test, the resistance of this memristor progressively reduces and spy with the increase of pulse voltage
It is held essentially constant in fixed resistance state, thus demonstrates self-learning function.The present invention possesses stable self-learning function,
Stable operation current industrial demand can have been met in 30 years at 85 DEG C.
[accompanying drawing explanation]
Fig. 1 is the overall structure schematic diagram of the present invention；
Fig. 2 is that the present invention presents many resistance characteristics figure in I-V tests；
Fig. 3 is that the present invention presents many resistance characteristics figure in V-I tests；
Fig. 4 be the present invention under pulsed voltage excitation from high-impedance state to low resistance state transition diagram；
Fig. 5 is the resistance stability test figure that the present invention completes at a room temperature and a high temperature more than 100 circulations；
Fig. 6 is the test figure that the present invention keeps resistance stability for a long time.
Wherein: 1-substrate；2-metallic bottom electrode；3-metallic top electrode.
[detailed description of the invention]
Below in conjunction with the accompanying drawings the present invention is described in further detail:
Seeing Fig. 1, the present invention includes that substrate 1, substrate 1 are quartz substrate, PET substrate or silicon chip substrate.
Metallic bottom electrode 2, depositing Al O in metallic bottom electrode 2 is deposited on substrate 1xNyThin film or AlN thin film, AlOxNy
Metallic top electrode 3 is deposited on thin film or AlN thin film.The thickness of metallic bottom electrode 2 is 300～500nm, AlOxNy
The thickness of thin film or AlN thin film is 10～30nm, and the thickness of metallic top electrode 3 is 300～500nm, metal
The material of hearth electrode 2 and metallic top electrode 3 all uses Ti, Al, Cu, Ti, Ni or Ag.
The invention also discloses the preparation method of a kind of aluminum based film memristor with self-learning function, including following
Step:
1) in quartz substrate, PET substrate or silicon chip substrate, depositing a layer thickness with ion beam evaporation methods is
The metallic bottom electrode of 300～500nm；
2) magnetron sputtering technique is utilized to deposit the AlO that a layer thickness is 10～30nm in metallic bottom electrodexNy
Thin film or AlN thin film；In the corresponding chambers of magnetron sputtering coater, being passed through volume ratio is 45:15sccm
Argon and the mixed gas of nitrogen, set vacuum 10～6Torr, plated film stablizes air pressure 0.5～1Pa；Target
The aluminum target selecting purity to be 99.99%.
3) at AlOxNyUtilize ion beam evaporation methods and mask to deposit a layer thickness on thin film or AlN thin film to be
The metallic top electrode of 500nm.
As in figure 2 it is shown, in I-V tests, along with the increase of voltage, memristor experienced by be forgotten and remembers
Stage.Different resistances represents different memory stages.Time initial, device is positioned at before low resistance state class is similar to
The memory stage of phase, along with the increase of scanning voltage, device changes to high value from low resistance, early stage storage
Information loss is similar to " forgeing " function of the mankind；When scanning voltage continues to increase, and resistance gradually reduces, its
Process is similar to information write, the process i.e. " learnt ".In this course, device can reach different
Resistance A, the corresponding different memory stage of B, C.
As it is shown on figure 3, it is possible to locate that the memristor of correspondence is in along with the increase measuring electric current in V-I tests
Different resistance value state, i.e. device can change self resistance according to the difference of applying electric current and correspondence is different
Memory stage.
As shown in Figure 4, in pulse test, along with the increase resistance of pulse voltage reduces, memristor resistance is also
Changed different memory stages i.e. corresponding, this resistance with pulse voltage change the process that reduces be referred to as from
Process.
As it is shown in figure 5, this resistance-variable storing device good stability, all can protect when low temperature or 100 DEG C of high temperature
Hold each resistance state constant, it is seen that the holding of its resistance state and change are not the processes of a completely random, but controlled
's.
As shown in Figure 6, test the failure time of device at different temperatures, can be from device shown in figure
Stable operation 30 years at 85 DEG C, have fully met industrial requirements.
Above content is only the technological thought that the present invention is described, it is impossible to limit protection scope of the present invention with this, all
It is the technological thought proposed according to the present invention, any change done on the basis of technical scheme, each fall within this
Within the protection domain of bright claims.
Claims (10)
1. an aluminum based film memristor with self-learning function, it is characterised in that include substrate (1), substrate
(1) metallic bottom electrode (2) and metallic top electrode (3), metallic bottom electrode (2) and metal are set gradually on
Top electrode is provided with active layer between (3).
The aluminum based film memristor with self-learning function the most according to claim 1, it is characterised in that institute
Stating substrate (1) is quartz substrate, PET substrate or silicon chip substrate.
The aluminum based film memristor with self-learning function the most according to claim 1 and 2, it is characterised in that
The thickness of described metallic bottom electrode (2) is 300～500nm.
The aluminum based film memristor with self-learning function the most according to claim 3, it is characterised in that institute
The material stating metallic bottom electrode (2) uses Ti, Al, Cu, Ti, Ni or Ag.
The aluminum based film memristor with self-learning function the most according to claim 1 and 2, it is characterised in that
Described active layer is the AlO being deposited in metallic bottom electrode (2)xNyThin film or AlN thin film, AlOxNyThin
The thickness of film or AlN thin film is 10～30nm, and wherein x:y is (0.5～2): 1.
The aluminum based film memristor with self-learning function the most according to claim 1 and 2, it is characterised in that
The thickness of described metallic top electrode (3) is 300～500nm.
The aluminum based film memristor with self-learning function the most according to claim 6, it is characterised in that institute
The material stating metallic top electrode (3) uses Ti, Al, Cu, Ti, Ni or Ag.
8. the preparation method of an aluminum based film memristor with self-learning function, it is characterised in that include following
Step:
1) in quartz substrate, PET substrate or silicon chip substrate, depositing a layer thickness with ion beam evaporation methods is
The metallic bottom electrode of 300～500nm；
2) magnetron sputtering technique is utilized to deposit the AlO that a layer thickness is 10～30nm in metallic bottom electrodexNy
Thin film or AlN thin film；
3) at AlOxNyUtilize ion beam evaporation methods and mask to deposit a layer thickness on thin film or AlN thin film to be
The metallic top electrode of 500nm.
The preparation method of the aluminum based film memristor with self-learning function the most according to claim 8, it is special
Levy and be, described step 1) and 3) in, the material of metallic bottom electrode (1) and metallic top electrode (3) is equal
Use Ti, Al, Cu, Ti, Ni or Ag.
The preparation method of the aluminum based film memristor with self-learning function the most according to claim 8, its
It is characterised by, described step 2) in, in the corresponding chambers of magnetron sputtering coater, being passed through volume ratio is 45:
The argon of 15sccm and the mixed gas of nitrogen, set vacuum 10～6Torr, and plated film stablizes air pressure 0.5～1Pa；
The aluminum target that target selects purity to be 99.99%.
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010085227A1 (en) * | 2009-01-26 | 2010-07-29 | Hewlett-Packard Company, L.P. | Semiconductor memristor devices |
| CN103797573A (en) * | 2011-08-03 | 2014-05-14 | 惠普发展公司，有限责任合伙企业 | Nitride-based memristors |
| US8872246B1 (en) * | 2012-01-26 | 2014-10-28 | Sandia Corporation | Memristor using a transition metal nitride insulator |
-
2016
- 2016-04-22 CN CN201610256599.4A patent/CN105870322A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010085227A1 (en) * | 2009-01-26 | 2010-07-29 | Hewlett-Packard Company, L.P. | Semiconductor memristor devices |
| CN103797573A (en) * | 2011-08-03 | 2014-05-14 | 惠普发展公司，有限责任合伙企业 | Nitride-based memristors |
| TWI520393B (en) * | 2011-08-03 | 2016-02-01 | 惠普研發公司 | Nitride-based memristors |
| US8872246B1 (en) * | 2012-01-26 | 2014-10-28 | Sandia Corporation | Memristor using a transition metal nitride insulator |
Non-Patent Citations (4)
| Title |
|---|
| BYUNG JOON CHOI,ET AL: "Nitride memristors", 《APPL PHYS A》 * |
| CHEN C,ET AL: "Bipolar resistive switching in Cu/AlN/Pt nonvolatile memory device", 《APPLIED PHYSICS LETTERS》 * |
| ZHANG JIAN,ET AL: "Bipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition", 《APPLIED SURFACE SCIENCE》 * |
| ZHU W,ET AL: "Al Content-Dependent Resistive Switching in Al-Rich AlO<sub>x</sub>N<sub>y</sub> Thin films", 《NANOSCIENCE AND NANOTECHNOLOGY LETTERS》 * |
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