CN105866983B - Germanium silver composite material and its application in the opto-electronic device - Google Patents
Germanium silver composite material and its application in the opto-electronic device Download PDFInfo
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- CN105866983B CN105866983B CN201610216678.2A CN201610216678A CN105866983B CN 105866983 B CN105866983 B CN 105866983B CN 201610216678 A CN201610216678 A CN 201610216678A CN 105866983 B CN105866983 B CN 105866983B
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- BPYMJIZUWGOKJS-UHFFFAOYSA-N [Ge].[Ag] Chemical compound [Ge].[Ag] BPYMJIZUWGOKJS-UHFFFAOYSA-N 0.000 title claims abstract description 47
- 239000002131 composite material Substances 0.000 title claims abstract description 47
- 230000005693 optoelectronics Effects 0.000 title claims abstract description 16
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 77
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims abstract description 76
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 58
- 229910052709 silver Inorganic materials 0.000 claims abstract description 58
- 239000004332 silver Substances 0.000 claims abstract description 57
- 238000005468 ion implantation Methods 0.000 claims abstract description 13
- FOIXSVOLVBLSDH-UHFFFAOYSA-N Silver ion Chemical compound [Ag+] FOIXSVOLVBLSDH-UHFFFAOYSA-N 0.000 claims abstract description 9
- 239000002245 particle Substances 0.000 claims abstract description 9
- 230000003993 interaction Effects 0.000 claims abstract description 8
- 238000000137 annealing Methods 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 6
- 230000008901 benefit Effects 0.000 claims description 5
- 239000011261 inert gas Substances 0.000 claims description 3
- 239000002105 nanoparticle Substances 0.000 abstract description 29
- 230000002708 enhancing effect Effects 0.000 abstract description 7
- 230000003595 spectral effect Effects 0.000 abstract description 5
- 230000008033 biological extinction Effects 0.000 description 15
- 238000001228 spectrum Methods 0.000 description 13
- 230000005684 electric field Effects 0.000 description 11
- 239000002077 nanosphere Substances 0.000 description 11
- 230000008878 coupling Effects 0.000 description 6
- 238000010168 coupling process Methods 0.000 description 6
- 238000005859 coupling reaction Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 230000010287 polarization Effects 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 235000013339 cereals Nutrition 0.000 description 3
- 238000004377 microelectronic Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 230000005622 photoelectricity Effects 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 241000209094 Oryza Species 0.000 description 2
- 235000007164 Oryza sativa Nutrition 0.000 description 2
- 230000033228 biological regulation Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000003574 free electron Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 235000009566 rice Nutrition 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- VGRFVJMYCCLWPQ-UHFFFAOYSA-N germanium Chemical compound [Ge].[Ge] VGRFVJMYCCLWPQ-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000002082 metal nanoparticle Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
- G02F1/0151—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction modulating the refractive index
- G02F1/0154—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction modulating the refractive index using electro-optic effects, e.g. linear electro optic [LEO], Pockels, quadratic electro optical [QEO] or Kerr effect
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Abstract
The present invention provides a kind of germanium silver composite material and its application in the opto-electronic device, and the germanium silver composite material includes intrinsic germanium and the silver nano-grain that is embedded in the intrinsic germanium.The germanium silver composite material can by ion implantation by silver ion implantation into intrinsic germanium and anneal obtain.The present invention can use the local surface plasma resonance humidification of silver nano-grain, and surface plasma body resonant vibration couples repulsive interaction between nano particle, regulate and control resonant check peak position frequency near infrared band, to enhance germanium in the photoelectric respone of near infrared band.By density of the control nano-Ag particles in intrinsic germanium, the spectral range of enhancing germanium photoelectric respone can be effectively controlled from visible light to near-infrared.
Description
Technical field
The invention belongs to optoelectronic areas, it is related to a kind of germanium silver composite material and its application in the opto-electronic device.
Background technique
The germanium semiconductor material important as microelectronic field has higher carrier mobility and more for silicon
Small forbidden bandwidth, therefore have in terms of microelectronics the performance better than silicon, it could even be possible to substituted for silicon becomes microelectronic industry
Mainstream.But there is high-purity germanium single crystal high refraction coefficient to be not through visible light and ultraviolet light to infrared ray transparent.Therefore, it limits
Germanium has been made in the application of optoelectronic areas.
Local surface plasma resonance (LSPR) is metal nanoparticle surface free electron collective oscillation and incident light
The coupling that son is formed.Since it is under resonant wavelength, so that local field strength is very strong, it can effectively enhance the suction to light
It receives.And its resonant frequency is mainly by the electron density of metal, effective electron mass, the size of particle, shape and surrounding medium shadow
It rings.Therefore, many unique optical properties can be realized by changing particle size, the medium of surrounding and structure.In light
Electronic field has important research significance.
LSPR is applied on germanium, the advantage of the two can be effectively combined, the photoelectricity for improving germanium near infrared band is rung
It answers, to widen germanium in the application range of optoelectronic areas, there is highly important directive significance to construction germanium base photoelectric device.
Summary of the invention
In view of the foregoing deficiencies of prior art, the purpose of the present invention is to provide a kind of germanium silver composite material and its
Application in photoelectric device, for solving the problems, such as that germanium in the prior art is restricted in the application of optoelectronic areas.
In order to achieve the above objects and other related objects, the present invention provides a kind of germanium silver composite material, and the germanium silver is compound
Material includes intrinsic germanium and the silver nano-grain that is embedded in the intrinsic germanium.
Optionally, the germanium silver composite material is that silver ion implantation into intrinsic germanium and is annealed by ion implantation
It arrives.
Optionally, the atmosphere of the annealing is inert gas, and annealing region is 700-900 degrees Celsius.
Optionally, the average particle size range of the silver nano-grain is 1~50nm.
Optionally, in the germanium silver composite material, silver-colored atom accounting is less than 5%.
The present invention also provides a kind of application of germanium silver composite material in the opto-electronic device, the germanium silver composite material is using above-mentioned
Any one germanium silver composite material.
Optionally, the application is the local surface plasma resonance humidification using silver nano-grain, enhances germanium
In the photoelectric respone of near infrared band.
Optionally, the application is received using the local surface plasma resonance humidification and silver of silver nano-grain
Surface plasma body resonant vibration couples repulsive interaction between rice grain, regulates and controls resonant check peak position frequency near infrared band.
Optionally, the application is using germanium silver composite material as the intrinsic layer material of PIN photodiode.
Optionally, the PIN photodiode includes p-type heavily doped layer and N-type heavily doped layer；The intrinsic layer is formed in
Between the p-type heavily doped layer and N-type heavily doped layer；P-type heavily doped layer surface is formed with anti-reflection film and first electrode, institute
It states N-type heavily doped layer surface and is formed with second electrode.
Optionally, the thickness of the intrinsic layer is greater than the thickness of the p-type heavily doped layer or N-type heavily doped layer.
As described above, germanium silver composite material of the invention and its application in the opto-electronic device, have the advantages that
Germanium silver composite material of the invention includes intrinsic germanium and the silver nano-grain that is embedded in the intrinsic germanium, wherein silver nano-grain
Can by ion implantation by silver ion implantation into intrinsic germanium and anneal obtain.The present invention can use the office of silver nano-grain
Surface plasma body resonant vibration couples repulsive interaction, regulation between field surface plasma resonance humidification and nano particle
Resonant check peak position frequency is near infrared band, to enhance germanium in the photoelectric respone of near infrared band.By controlling nano silver
Density of the particle in intrinsic germanium can effectively control the spectral range of enhancing germanium photoelectric respone from visible light to near-infrared.
Detailed description of the invention
Fig. 1 is shown as the structural schematic diagram of germanium silver composite material of the invention.
Fig. 2 is shown as the schematic diagram being applied to germanium silver composite material of the invention in PIN photodiode.
The Ag nanosphere that Fig. 3 is shown as individually isolating is placed on the simple model in germanium.
Fig. 4 is shown as the simple model that two isolated Ag nanospheres are placed in germanium at a distance of d.
Fig. 5 is shown as the simple model that three Ag nanospheres are placed in germanium with right angled triangle.
Fig. 6 is shown as the simple model that three Ag nanospheres are placed in germanium with isosceles triangle.
Fig. 7 is shown as pure germanium, radius be the single silver nanoparticle ball of 10nm in air, radius be that the single silver nanoparticle ball of 10nm exists
Delustring map in germanium.
Fig. 8 is shown as in Fig. 7 electric field sectional view corresponding to peak position I.
Fig. 9 is shown as silver-colored and germanium real part of permittivity and silver-colored real part of permittivity is real plus twice of germanium dielectric constant
The curve in portion.
Figure 10 is shown as the delustring figure when two radiuses are the silver nanoparticle ball spacing 2nm of 10nm under the direction y and z polarizes
Spectrum.
Figure 11 is shown as in Figure 10 electric field sectional view corresponding to peak position II.
Figure 12 is shown as in Figure 10 electric field sectional view corresponding to peak position III.
Figure 13 is shown as delustring map of two silver nanoparticle balls under different spacing.
Figure 14 is shown as in germanium, and radius is three silver nanoparticle balls of 10nm into triangular arranged and spacing d=
0nm, the delustring map under y and z polarization.
Figure 15 is shown as in germanium, and radius is that three silver nanoparticle balls of 10nm are arranged at isosceles right triangle, inclined in y
Delustring map under vibration, different spacing.
Figure 16 is shown as in germanium, and radius is three silver nanoparticle balls of 10nm into triangular arranged, in y-polarisation, no
With the delustring map under spacing.
Figure 17 is shown as in germanium, and three silver nanoparticle ball spacing that radius is 10nm are 0nm, at triangular arranged and
Isosceles right triangle arranges under two kinds of situations, the extinction spectra comparison under y-polarisation.
Figure 18 is shown as in Figure 17 electric field sectional view corresponding to peak position IV.
Figure 19 is shown as in Figure 17 electric field sectional view corresponding to peak position V.
Figure 20 is shown as in germanium, and radius is three silver nanoparticle balls of 10nm into triangular arranged and spacing d=
0nm, under situation as shown in Figure 6, by three nanospheres, central point rotates 0 ° and 30 ° of obtained extinction spectras about the z axis.
Component label instructions
1 intrinsic germanium
2 silver nano-grains
3 p-type heavily doped layers
4 N-type heavily doped layers
5 intrinsic layers
6 anti-reflection films
7 first electrodes
8 second electrodes
Specific embodiment
Illustrate embodiments of the present invention below by way of specific specific example, those skilled in the art can be by this specification
Other advantages and efficacy of the present invention can be easily understood for disclosed content.The present invention can also pass through in addition different specific realities
The mode of applying is embodied or practiced, the various details in this specification can also based on different viewpoints and application, without departing from
Various modifications or alterations are carried out under spirit of the invention.
1 is please referred to Figure 20.It should be noted that diagram provided in the present embodiment only illustrates this hair in a schematic way
Bright basic conception, only shown in schema then with related component in the present invention rather than component count when according to actual implementation,
Shape and size are drawn, when actual implementation kenel, quantity and the ratio of each component can arbitrarily change for one kind, and its component
Being laid out kenel may also be increasingly complex.
Embodiment one
The present invention provides a kind of germanium silver composite material, referring to Fig. 1, being shown as the simplification structure of the germanium silver composite material
Schematic diagram, including intrinsic germanium 1 and the silver nano-grain 2 being embedded in the intrinsic germanium 1.In germanium silver composite material of the invention, silver
With germanium not bonding, but a kind of composite construction is formd.
Specifically, intrinsic germanium, which refers to, is entirely free of impurity and the pure germanium without lattice defect.
As an example, the germanium silver composite material is that silver ion implantation into intrinsic germanium and is annealed by ion implantation
It obtains.Due to simple silver ion do not have local surface plasma resonance characteristic, the present invention in, the effect of annealing is to make to infuse
The silver ion entered is agglomerated into silver nano-grain, and silver nano-grain has local surface plasma resonance characteristic.
As an example, the atmosphere of the annealing is inert gas, such as nitrogen or argon gas；The temperature range of the annealing is
700-900 DEG C, anneal duration is 1-5min.
In the present embodiment, the average particle size range of the silver nano-grain is 1~50nm, preferably 10nm or so.
It should be pointed out that in the germanium silver composite material, the density of silver nano-grain can by silver ion implantation dosage,
Constituency injection control, but the density of silver nano-grain should be far less that germanium atom density, in order to avoid destroy the intrinsic properties of germanium.
In the present embodiment, the silver atoms accounting in the germanium silver composite material is preferably less than 5%.
Embodiment two
The present invention also provides a kind of application of germanium silver composite material in the opto-electronic device, and the germanium silver composite material is using implementation
Any one germanium silver composite material described in example one.
Specifically, the application is the local surface plasma resonance humidification using silver nano-grain, enhance germanium
In the photoelectric respone of near infrared band.Or the application is enhanced using the local surface plasma resonance of silver nano-grain
Surface plasma body resonant vibration couples repulsive interaction between effect and silver nano-grain, and regulation resonant check peak position frequency is close red
Wave section.
As an example, the application is using germanium silver composite material as the intrinsic layer material of PIN photodiode.
PIN photodiode is also referred to as PIN junction diode or PIN diode, between P-type semiconductor and N-type semiconductor
It clips one layer of intrinsic semiconductor (Intrinsic layers or I layers), absorbs light radiation and generate photoelectric current, can be used as a kind of light inspection
Survey device.PIN photodiode has many advantages, such as that junction capacity is small, the transition time is short, high sensitivity.Because intrinsic layer is relative to the area P
It is high resistance area with the area N, the internal electric field of PN junction just substantially concentrates in I layers entirely.It is I layers thicker in PIN photodiode, almost
Occupy entire depletion region.The incident light of the overwhelming majority is absorbed in I layers and generates a large amount of electron-hole pair.In I layer two
Side is the very high p-type of doping concentration and N-type semiconductor, P layers and N layers very thin, absorbs the ratio very little of incident light.Thus light generates
Drift component accounts for leading position in electric current, this just greatly accelerates response speed.
It include silver nanoparticle using germanium silver composite material as the intrinsic layer material of PIN photodiode in the present embodiment
The intrinsic germanium of grain works in depletion layer.
As an example, as shown in Fig. 2, the PIN photodiode includes p-type heavily doped layer 3 and N-type heavily doped layer 4；Institute
Intrinsic layer 5 is stated to be formed between the p-type heavily doped layer 3 and N-type heavily doped layer 4；3 surface of p-type heavily doped layer is formed with
Anti-reflection film 6 and first electrode 7,4 surface of N-type heavily doped layer are formed with second electrode 8.As an example, being also shown in Fig. 2
A kind of light beam incident direction.In the present embodiment, the thickness of the intrinsic layer 5 is greater than the p-type heavily doped layer 3 or N-type heavy doping
The thickness of layer 4.
The above is only examples, and in other embodiments, the germanium silver composite material also can be applied to other photoelectric devices
In, effect is equally the local surface plasma resonance humidification using silver nano-grain, enhances germanium near infrared band
Photoelectric respone, should not excessively limit the scope of the invention herein.
Embodiment three
The present embodiment, which verifies germanium silver composite material of the invention by theoretical calculation, can enhance the frequency of germanium photoelectric respone
Spectral limit is from visible light to near-infrared.
The photoelectric respone process of germanium is that photon transfers energy to electronics and becomes free electron.Therefore pass through research germanium
Delustring map (absorption and scattering of light, two kinds of processes all have exchanging for energy with electronics) can effectively reflect the photoelectricity of germanium
Response characteristic.Calculating extinction spectra is simulated using Finite-Difference Time-Domain Method (FDTD) in the present embodiment.
In order to probe into basic LSPR Extinction Characteristic of the nano particle in germanium, simplified in the present embodiment using silver nanoparticle ball
Model calculates.Numerical simulator of the invention is as seen in figures 3-6, wherein indicates that the radius of Ag nanosphere, d indicate ball with r
The distance between ball.With Respectively represent the direction of propagation of incident light and the polarization direction of electric field.Fig. 3 indicates single isolated
Ag nanosphere be placed in germanium；Fig. 4 indicates that two isolated Ag nanospheres are placed at a distance of d；Fig. 5 and Fig. 6 respectively indicates three Ag
Nanosphere is placed with isosceles right triangle and equilateral triangle.
It should be pointed out that the uncontrollability when situation of two and three silver nanoparticle balls of research is due to experiment, and
Inquiring into silver nano-grain spacing is the influence for considering injection silver nano-grain density to delustring map.
Fig. 7 is please referred to Fig. 9, wherein show that the extinction spectra of pure germanium, radius are the single silver nanoparticle ball of 10nm in Fig. 7
The extinction spectra of aerial extinction spectra and silver nanoparticle ball in germanium.Fig. 8 is shown as electricity corresponding to peak position I in Fig. 7
Field sectional view.Fig. 9 is shown as silver-colored and germanium real part of permittivity and silver-colored real part of permittivity plus twice of germanium dielectric constant
The curve of real part.
The extinction spectra of three kinds of situations in comparison diagram 7, silver nanoparticle ball can effectively enhance in germanium germanium visible light with
And the delustring response of near infrared band.And enhance most very near infrared band, and new delustring peak position occurs in near-infrared.Peak position
Appearance be because local surface plasma resonance caused by.According to mie theory and quasistatic approximation: for a volume
For V, dielectric constant is ε=ε1+iε2Nanosphere dielectric constant be εmUniform dielectric in, Extinction Cross has following table
Show:
According to the above-mentioned equation of equation, reach peak value to Extinction Cross, it is necessary to [ε1+2εm]2It is minimized, i.e. [real
(εAg)+2real(εGe)]2(real () representative takes real part) is minimized.It is full by the dielectric constant (as shown in Figure 9) of Ge and Ag
The position being minimized enough is at 950nm or so (as shown in dotted line and solid line intersection point), it is contemplated that error explains local well
Surface plasma can effectively enhance germanium the extinction spectra of near infrared band the phenomenon that.
Figure 10 is please referred to Figure 13, wherein Figure 10 is shown as the Yin Na that two radiuses are 10nm in the case where the direction y and z polarizes
Delustring map when rice ball spacing 2nm.Figure 11 is shown as in Figure 10 electric field sectional view corresponding to peak position II.Figure 12 is shown as figure
Electric field sectional view corresponding to peak position III in 10.Figure 13 is shown as delustring map of two silver nanoparticle balls under different spacing.
This it appears that surface plasma body resonant vibration does not couple between silver nanoparticle ball under z polarization.And in y-polarisation
Under, there is obvious coupling, and its resonance peak is due to coupling repulsive interaction red shift.As distance reduces between two balls, coupling is made
With enhancing, peak position gets over red shift, and enhancing covers broader wave band.
Figure 14 is please referred to again to Figure 20, wherein Figure 14 is shown as in germanium, radius be 10nm three silver nanoparticle balls at etc.
Side rounded projections arranged and spacing d=0nm, the delustring map under y and z polarization.Figure 15 is shown as in germanium, and radius is 10nm's
Three silver nanoparticle balls are arranged at isosceles right triangle, the delustring map under y-polarisation, different spacing.Figure 16 is shown as in germanium
In, delustring map of three silver nanoparticle balls that radius is 10nm at triangular arranged, under y-polarisation, different spacing.Figure 17
It is shown as in germanium, three silver nanoparticle ball spacing that radius is 10nm are 0nm, at triangular arranged and isosceles right angle trigonometry
Shape arranges under two kinds of situations, the extinction spectra comparison under y-polarisation.Figure 18 is shown as electric field corresponding to peak position IV in Figure 17 and cuts
Face figure.Figure 19 is shown as in Figure 17 electric field sectional view corresponding to peak position V.Figure 20 is shown as in germanium, and radius is the three of 10nm
A silver nanoparticle ball is at triangular arranged and spacing d=0nm, under situation as shown in Figure 6, by three nanospheres center about the z axis
Point rotation 0 ° and 30 ° of obtained extinction spectras.
As can be seen that similar with conclusion before, under z polarization, nanosphere surface plasma body resonant vibration is not coupled.And
Under y-polarisation, there is obvious coupling, and its resonance peak is due to coupling repulsive interaction red shift.And it can according to Figure 17 and Figure 20
With discovery, the relative position of extinction spectra and silver nanoparticle ball is insensitive.This can reduce influence factor when experiment, facilitate reality
Test realization.
Compare it is all as a result, the principal element for influencing extinction spectra be spacing between silver nanoparticle ball (in practical applications
It can be realized by controlling the density of silver nano-grain).It in practical applications, can be effective by controlling the density of particle
Control enhancing germanium photoelectric respone spectral range-from visible light to near-infrared.
In conclusion germanium silver composite material of the invention includes intrinsic germanium and the silver nanoparticle that is embedded in the intrinsic germanium
Grain, wherein silver nano-grain can by ion implantation by silver ion implantation into intrinsic germanium and anneal obtain.The present invention can be with
Utilize surface plasma body resonant vibration between the local surface plasma resonance humidification and nano particle of silver nano-grain
Repulsive interaction is coupled, regulates and controls resonant check peak position frequency near infrared band, so that the photoelectricity for enhancing germanium near infrared band is rung
It answers.By density of the control nano-Ag particles in intrinsic germanium, the spectral range of enhancing germanium photoelectric respone can be effectively controlled
From visible light to near-infrared.So the present invention effectively overcomes various shortcoming in the prior art and has high industrial exploitation value
Value.
The above-described embodiments merely illustrate the principles and effects of the present invention, and is not intended to limit the present invention.It is any ripe
The personage for knowing this technology all without departing from the spirit and scope of the present invention, carries out modifications and changes to above-described embodiment.Cause
This, institute is complete without departing from the spirit and technical ideas disclosed in the present invention by those of ordinary skill in the art such as
At all equivalent modifications or change, should be covered by the claims of the present invention.
Claims (8)
1. a kind of germanium silver composite material, it is characterised in that: the germanium silver composite material includes intrinsic germanium and is embedded in the intrinsic germanium
In silver nano-grain, the germanium silver composite material is that silver ion implantation into intrinsic germanium and is annealed by ion implantation
It arrives, to utilize surface plasma between the local surface plasma resonance humidification and silver nano-grain of silver nano-grain
Resonance body couples repulsive interaction, regulates and controls resonant check peak position frequency near infrared band, wherein the silver nano-grain is averaged
Particle size range is 1~50nm.
2. germanium silver composite material according to claim 1, it is characterised in that: the atmosphere of the annealing is inert gas, is moved back
Fiery temperature range is 700-900 degrees Celsius.
3. germanium silver composite material according to claim 1, it is characterised in that: in the germanium silver composite material, silver-colored atom
Accounting is less than 5%.
4. a kind of application of germanium silver composite material in the opto-electronic device, it is characterised in that: the germanium silver composite material is used as weighed
Benefit requires germanium silver composite material described in 1~3 any one.
5. the application of germanium silver composite material according to claim 4 in the opto-electronic device, it is characterised in that: the application is
Using the local surface plasma resonance humidification of silver nano-grain, enhance germanium in the photoelectric respone of near infrared band.
6. the application of germanium silver composite material according to claim 4 in the opto-electronic device, it is characterised in that: the application is
Using germanium silver composite material as the intrinsic layer material of PIN photodiode.
7. the application of germanium silver composite material according to claim 6 in the opto-electronic device, it is characterised in that: the PIN light
Electric diode includes p-type heavily doped layer and N-type heavily doped layer；The intrinsic layer is formed in the p-type heavily doped layer and N-type is heavily doped
Between diamicton；P-type heavily doped layer surface is formed with anti-reflection film and first electrode, and N-type heavily doped layer surface is formed with
Second electrode.
8. the application of germanium silver composite material according to claim 7 in the opto-electronic device, it is characterised in that: the intrinsic layer
Thickness be greater than the thickness of the p-type heavily doped layer or N-type heavily doped layer.
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| CN101740722A (en) * | 2009-12-25 | 2010-06-16 | 中国科学院光电技术研究所 | Almost perfect absorbing structure for wide wave band |
| CN104157741A (en) * | 2014-09-10 | 2014-11-19 | 中国科学院上海微系统与信息技术研究所 | Preparation method of photoelectric detector |
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| CN101740722A (en) * | 2009-12-25 | 2010-06-16 | 中国科学院光电技术研究所 | Almost perfect absorbing structure for wide wave band |
| CN104157741A (en) * | 2014-09-10 | 2014-11-19 | 中国科学院上海微系统与信息技术研究所 | Preparation method of photoelectric detector |
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