CN105866983A - Germanium-silver composite and application thereof in photoelectric devices - Google Patents
Germanium-silver composite and application thereof in photoelectric devices Download PDFInfo
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- CN105866983A CN105866983A CN201610216678.2A CN201610216678A CN105866983A CN 105866983 A CN105866983 A CN 105866983A CN 201610216678 A CN201610216678 A CN 201610216678A CN 105866983 A CN105866983 A CN 105866983A
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- 239000002131 composite material Substances 0.000 title claims abstract description 51
- BPYMJIZUWGOKJS-UHFFFAOYSA-N [Ge].[Ag] Chemical compound [Ge].[Ag] BPYMJIZUWGOKJS-UHFFFAOYSA-N 0.000 title claims abstract description 50
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 78
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims abstract description 77
- 229910052709 silver Inorganic materials 0.000 claims abstract description 61
- 239000004332 silver Substances 0.000 claims abstract description 60
- 239000002105 nanoparticle Substances 0.000 claims abstract description 27
- 230000008878 coupling Effects 0.000 claims abstract description 12
- 238000010168 coupling process Methods 0.000 claims abstract description 12
- 238000005859 coupling reaction Methods 0.000 claims abstract description 12
- FOIXSVOLVBLSDH-UHFFFAOYSA-N Silver ion Chemical compound [Ag+] FOIXSVOLVBLSDH-UHFFFAOYSA-N 0.000 claims abstract description 10
- 238000000137 annealing Methods 0.000 claims abstract description 9
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 61
- 230000005693 optoelectronics Effects 0.000 claims description 15
- 238000005468 ion implantation Methods 0.000 claims description 11
- 239000002245 particle Substances 0.000 claims description 8
- 230000003993 interaction Effects 0.000 claims description 7
- 230000033228 biological regulation Effects 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- 239000011261 inert gas Substances 0.000 claims description 3
- 230000005622 photoelectricity Effects 0.000 claims description 2
- 230000004044 response Effects 0.000 abstract description 5
- 230000003595 spectral effect Effects 0.000 abstract description 5
- 150000002500 ions Chemical class 0.000 abstract description 3
- -1 silver ions Chemical class 0.000 abstract description 3
- 238000002347 injection Methods 0.000 abstract description 2
- 239000007924 injection Substances 0.000 abstract description 2
- 230000001276 controlling effect Effects 0.000 abstract 1
- 230000002708 enhancing effect Effects 0.000 abstract 1
- 230000001105 regulatory effect Effects 0.000 abstract 1
- 230000008033 biological extinction Effects 0.000 description 15
- 239000002077 nanosphere Substances 0.000 description 14
- 230000005684 electric field Effects 0.000 description 12
- 238000001228 spectrum Methods 0.000 description 12
- 230000000694 effects Effects 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000004377 microelectronic Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 241000209094 Oryza Species 0.000 description 2
- 235000007164 Oryza sativa Nutrition 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000003574 free electron Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 235000009566 rice Nutrition 0.000 description 2
- 241000196324 Embryophyta Species 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 235000013339 cereals Nutrition 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000002082 metal nanoparticle Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
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- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
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- 230000005855 radiation Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
- G02F1/0151—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction modulating the refractive index
- G02F1/0154—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction modulating the refractive index using electro-optic effects, e.g. linear electro optic [LEO], Pockels, quadratic electro optical [QEO] or Kerr effect
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Abstract
The invention provides a germanium-silver composite and application thereof in photoelectric devices. The germanium-silver composite comprises intrinsic germanium and silver nanoparticles buried in the intrinsic germanium. The germanium-silver composite can be made by injecting silver ions the intrinsic germanium by ion injection and annealing. Through local surface plasma resonance enhancement of the silver nanoparticles and resonance coupling and repulsion of surface plasma between the nanoparticles, the frequency of resonance enhancement peaks can be regulated to near-infrared band, thereby enhancing photoelectric response of germanium in near-infrared band. By controlling the density of silver nanoparticles in the intrinsic germanium, photoelectric response spectral range of enhanced germanium can be effectively controlled from visible light to near-infrared.
Description
Technical field
The invention belongs to optoelectronic areas, relate to a kind of germanium silver composite material and application in the opto-electronic device thereof.
Background technology
Germanium, as the important semi-conducting material of microelectronic, has higher carrier mobility and less taboo for silicon
Bandwidth, therefore has the performance being better than silicon in terms of microelectronics, it could even be possible to substituted for silicon becomes the main flow of microelectronic industry.But
It is that HpGe monocrystalline has high refraction coefficient, to infrared ray transparent, is not through visible ray and ultraviolet.Therefore, germanium is limited
Application at optoelectronic areas.
Local surface plasma resonance (LSPR) is that metal nanoparticle surface free electron collective oscillation is formed with incident photon
Coupling.Owing to it is under resonant wavelength so that local field intensity is very strong, can effectively strengthen the absorption to light.And
Its resonant frequency is mainly affected by electron density, effective electron mass, the size of particle, shape and the surrounding medium of metal.Cause
This, a lot of unique optical properties can realize by changing particle size, the medium of surrounding and structure.Lead at photoelectron
There is important Research Significance in territory.
LSPR is applied on germanium, both advantages can be effectively combined, improve the germanium photoelectric respone near infrared band,
Thus widen the germanium range of application at optoelectronic areas, structure germanium base photoelectric device is had highly important directive significance.
Summary of the invention
The shortcoming of prior art in view of the above, it is an object of the invention to provide a kind of germanium silver composite material and at phototube
Application in part, for solving the problem that germanium in prior art is restricted in the application of optoelectronic areas.
For achieving the above object and other relevant purposes, the present invention provides a kind of germanium silver composite material, described germanium silver composite material bag
Include intrinsic germanium and be embedded in the silver nano-grain in described intrinsic germanium.
Alternatively, described germanium silver composite material be by ion implantation by silver ion implantation to intrinsic germanium and anneal obtain.
Alternatively, the atmosphere of described annealing is inert gas, and annealing region is 700-900 degree Celsius.
Alternatively, the average particle size range of described silver nano-grain is 1～50nm.
Alternatively, in described germanium silver composite material, the atom accounting of silver is less than 5%.
The present invention also provides for the application in the opto-electronic device of a kind of germanium silver composite material, and this germanium silver composite material uses above-mentioned any one
Plant germanium silver composite material.
Alternatively, described application is the local surface plasma resonance humidification utilizing silver nano-grain, strengthens germanium the reddest
The photoelectric respone of outer wave band.
Alternatively, described application is local surface plasma resonance humidification and the silver nano-grain utilizing silver nano-grain
Between surface plasma body resonant vibration coupling repulsive interaction, regulation and control resonant check peak position frequency near infrared band.
Alternatively, described application is as the intrinsic layer material of PIN photodiode using germanium silver composite material.
Alternatively, described PIN photodiode includes p-type heavily doped layer and N-type heavily doped layer；Described intrinsic layer is formed at institute
State between p-type heavily doped layer and N-type heavily doped layer；Described p-type heavily doped layer surface is formed with anti-reflection film and the first electrode, institute
State N-type heavily doped layer surface and be formed with the second electrode.
Alternatively, the thickness of described intrinsic layer is more than described p-type heavily doped layer or the thickness of N-type heavily doped layer.
As it has been described above, the germanium silver composite material of the present invention and application in the opto-electronic device thereof, have the advantages that this
Bright germanium silver composite material includes intrinsic germanium and is embedded in the silver nano-grain in described intrinsic germanium, and wherein, silver nano-grain can pass through
Ion implantation by silver ion implantation to intrinsic germanium and anneal obtain.The present invention can utilize the local surface etc. of silver nano-grain
Gas ions resonant check effect, and surface plasma body resonant vibration coupling repulsive interaction between nano particle, regulate and control resonant check peak
Bit frequency is near infrared band, thus strengthens the germanium photoelectric respone near infrared band.By controlling nano-Ag particles at intrinsic germanium
In density, can effectively control strengthen germanium photoelectric respone spectral range from visible ray to near-infrared.
Accompanying drawing explanation
Fig. 1 is shown as the structural representation of the germanium silver composite material of the present invention.
Fig. 2 is shown as the schematic diagram being applied in PIN photodiode by the germanium silver composite material of the present invention.
Fig. 3 is shown as the simple model that single isolated Ag nanosphere is placed in germanium.
Fig. 4 is shown as the simple model that two isolated Ag nanospheres are positioned in germanium at a distance of d.
Fig. 5 is shown as the simple model that three Ag nanospheres are positioned in germanium with right angled triangle.
Fig. 6 is shown as the simple model that three Ag nanospheres are positioned in germanium with isosceles triangle.
Fig. 7 is shown as pure germanium, radius be 10nm Single Ag nanosphere in atmosphere, radius be that 10nm Single Ag nanosphere is at germanium
In delustring collection of illustrative plates.
Fig. 8 is shown as the electric field sectional view in Fig. 7 corresponding to peak position I.
Fig. 9 is shown as silver and the real part of permittivity of germanium and the silver real part of permittivity song plus the germanium real part of permittivity of twice
Line.
It is the delustring collection of illustrative plates during silver nanoparticle sphere gap 2nm of 10nm that Figure 10 is shown as two radiuses under y and z direction polarizes.
Figure 11 is shown as the electric field sectional view in Figure 10 corresponding to peak position II.
Figure 12 is shown as the electric field sectional view in Figure 10 corresponding to peak position III.
Figure 13 is shown as two silver nanoparticle balls delustring collection of illustrative plates under different spacing.
Figure 14 is shown as in germanium, and radius is that three silver nanoparticle balls of 10nm become triangular arranged and spacing d=0nm,
Delustring collection of illustrative plates under y and z polarization.
Figure 15 is shown as in germanium, and radius is that three silver nanoparticle balls of 10nm become isosceles right triangle to arrange, y-polarisation,
Delustring collection of illustrative plates under different spacing.
Figure 16 is shown as in germanium, and radius is that three silver nanoparticle balls of 10nm become triangular arranged, in y-polarisation, difference
Delustring collection of illustrative plates under spacing.
Figure 17 is shown as in germanium, radius be three silver nanoparticle sphere gaps of 10nm be 0nm, become triangular arranged and etc.
Extinction spectra contrast under waist right angled triangle two kinds of situations of arrangement, under y-polarisation.
Figure 18 is shown as the electric field sectional view in Figure 17 corresponding to peak position IV.
Figure 19 is shown as the electric field sectional view in Figure 17 corresponding to peak position V.
Figure 20 is shown as in germanium, and radius is that three silver nanoparticle balls of 10nm become triangular arranged and spacing d=0nm, as
Under situation shown in Fig. 6, three nanosphere central points about the z axis are rotated 0 ° and 30 ° of extinction spectras obtained.
Element numbers explanation
1 intrinsic germanium
2 silver nano-grains
3 p-type heavily doped layers
4 N-type heavily doped layers
5 intrinsic layers
6 anti-reflection films
7 first electrodes
8 second electrodes
Detailed description of the invention
Below by way of specific instantiation, embodiments of the present invention being described, those skilled in the art can be by disclosed by this specification
Content understand other advantages and effect of the present invention easily.The present invention can also be added by the most different detailed description of the invention
To implement or application, the every details in this specification can also be based on different viewpoints and application, in the essence without departing from the present invention
Various modification or change is carried out under god.
Refer to 1 to Figure 20.It should be noted that the diagram provided in the present embodiment illustrates the present invention's the most in a schematic way
Basic conception, the most graphic in component count time only display with relevant assembly in the present invention rather than is implemented according to reality, shape and
Size is drawn, and during its actual enforcement, the kenel of each assembly, quantity and ratio can be a kind of random change, and its assembly layout type
State is likely to increasingly complex.
Embodiment one
The present invention provides a kind of germanium silver composite material, refers to Fig. 1, is shown as the simplification structural representation of described germanium silver composite material
Figure, including intrinsic germanium 1 and be embedded in the silver nano-grain 2 in described intrinsic germanium 1.In the germanium silver composite material of the present invention, silver with
Germanium not bonding, but define a kind of composite construction.
Concrete, intrinsic germanium refers to be entirely free of impurity and the pure germanium without lattice defect.
As example, described germanium silver composite material be by ion implantation by silver ion implantation to intrinsic germanium and anneal obtain.
Owing to simple silver ion does not have local surface plasma resonance characteristic, in the present invention, the effect of annealing is the silver making injection
Ion cluster is polymerized to silver nano-grain, and silver nano-grain possesses local surface plasma resonance characteristic.
As example, the atmosphere of described annealing is inert gas, such as nitrogen or argon gas；The temperature range of described annealing is 700-900
DEG C, anneal duration is 1-5min.
In the present embodiment, the average particle size range of described silver nano-grain is 1～50nm, preferably about 10nm.
It is pointed out that in described germanium silver composite material, the density of silver nano-grain can pass through silver ion implantation dosage, constituency
Inject and control, but the density of silver nano-grain should be far less that germanium atom density, in order to avoid destroying the intrinsic properties of germanium.This reality
Executing in example, the silver atoms accounting in described germanium silver composite material is preferably less than 5%.
Embodiment two
The present invention also provides for the application in the opto-electronic device of a kind of germanium silver composite material, and this germanium silver composite material uses in embodiment one
Any one described germanium silver composite material.
Concrete, described application is the local surface plasma resonance humidification utilizing silver nano-grain, strengthens germanium the reddest
The photoelectric respone of outer wave band.Or described application be utilize silver nano-grain local surface plasma resonance humidification and
Surface plasma body resonant vibration coupling repulsive interaction between silver nano-grain, regulation and control resonant check peak position frequency is near infrared band.
As example, described application is as the intrinsic layer material of PIN photodiode using germanium silver composite material.
PIN photodiode is also referred to as PIN junction diode or PIN diode, and it presss from both sides between P-type semiconductor and N-type semiconductor
One layer of intrinsic semiconductor (Intrinsic layer, or title I layer), absorb light radiation and produce photoelectric current, can be as a kind of light detection
Device.PIN photodiode has that junction capacity is little, the transition time is short, sensitivity advantages of higher.Because intrinsic layer is relative to P district
Being high resistance area with N district, the internal electric field of PN junction concentrates in I layer the most entirely.In PIN photodiode, I layer is thicker,
Almost occupy whole depletion region.The incident light of the overwhelming majority is absorbed in I layer and is produced substantial amounts of electron-hole pair.At I
Layer both sides are that the p-type and N-type semiconductor that doping content is the highest, P layer and N layer are the thinnest, and the ratio absorbing incident light is the least.Cause
And light produces drift component in electric current and account for leading position, this is just greatly accelerated response speed.
In the present embodiment, using germanium silver composite material as the intrinsic layer material of PIN photodiode, include silver nano-grain
Intrinsic germanium is operated at depletion layer.
As example, as in figure 2 it is shown, described PIN photodiode includes p-type heavily doped layer 3 and N-type heavily doped layer 4；
Described intrinsic layer 5 is formed between described p-type heavily doped layer 3 and N-type heavily doped layer 4；Described p-type heavily doped layer 3 surface
Being formed with anti-reflection film 6 and the first electrode 7, described N-type heavily doped layer 4 surface is formed with the second electrode 8.As example, Fig. 2
In also show a kind of light beam incident direction.In the present embodiment, the thickness of described intrinsic layer 5 is more than described p-type heavily doped layer 3
Or the thickness of N-type heavily doped layer 4.
These are only example, in other embodiments, described germanium silver composite material can also be applied in other photoelectric device, makees
With being the local surface plasma resonance humidification utilizing silver nano-grain equally, strengthen germanium and ring at the photoelectricity of near infrared band
Should, should too not limit the scope of the invention.
Embodiment three
The present embodiment calculated by theory verify the germanium silver composite material of the present invention can strengthen the spectral range of germanium photoelectric respone from
Visible ray is to near-infrared.
The photoelectric respone process of germanium is that photon transfers energy to electronics and becomes free electron.Therefore by studying the delustring of germanium
Collection of illustrative plates (absorption of light and scattering, two kinds of processes all have the exchange of energy with electronics) can effectively reflect the photoelectric response characteristic of germanium.
The present embodiment use Finite-Difference Time-Domain Method (FDTD) simulate calculating extinction spectra.
In order to probe into the nano particle basic LSPR Extinction Characteristic in germanium, the present embodiment uses silver nanoparticle ball simplified model
Calculate.The numerical simulator of the present invention as seen in figures 3-6, wherein, represents the radius of Ag nanosphere with r, and d represents ball
And the distance between ball.With Represent the direction of propagation of incident light and the polarization direction of electric field respectively.Fig. 3 represents single isolated
Ag nanosphere be placed in germanium；Fig. 4 represents that two isolated Ag nanospheres are placed at a distance of d；Fig. 5 and Fig. 6 represents three respectively
Individual Ag nanosphere is placed with isosceles right triangle and equilateral triangle.
It is pointed out that the situation studying two and three silver nanoparticle balls is due to uncontrollability during experiment, and inquire into silver
Nano particle spacing is to consider to inject the impact on delustring collection of illustrative plates of the silver nano-grain density.
Referring to Fig. 7 to Fig. 9, wherein, show the extinction spectra of pure germanium in Fig. 7, radius is that 10nm Single Ag nanosphere exists
Extinction spectra in air and silver nanoparticle ball extinction spectra in germanium.Fig. 8 is shown as the electric field in Fig. 7 corresponding to peak position I
Sectional view.Fig. 9 is shown as silver and the real part of permittivity of germanium and the silver real part of permittivity germanium real part of permittivity plus twice
Curve.
The extinction spectra of three kinds of situations in comparison diagram 7, silver nanoparticle ball can strengthen germanium at visible ray and the reddest in germanium effectively
The delustring response of outer wave band.And strengthen the most very near infrared band, and there is new delustring peak position in near-infrared.The appearance of peak position
It is because what local surface plasma resonance caused.Theoretical and the quasistatic approximation according to mie: be V for a volume,
Dielectric constant is ε=ε1+iε2Nanosphere be ε at dielectric constantmUniform dielectric in, its Extinction Cross has table below to show:
According to the above-mentioned equation of equation, want Extinction Cross and reach peak value, it is necessary to [ε1+2εm]2Take minimum of a value, i.e.
[real(εAg)+2real(εGe)]2(real (.) represents and takes real part) takes minimum of a value.By the dielectric constant of Ge and Ag (such as Fig. 9 institute
Show), meet the position taking minimum of a value at about 950nm (as shown in dotted line and solid line intersection point), it is contemplated that error, well
Explain local surface plasma and can effectively strengthen the germanium phenomenon at the extinction spectra of near infrared band.
Referring to Figure 10 to Figure 13, wherein, it is the Yin Na of 10nm that Figure 10 is shown as two radiuses under y and z direction polarizes
Delustring collection of illustrative plates during rice sphere gap 2nm.Figure 11 is shown as the electric field sectional view in Figure 10 corresponding to peak position II.Figure 12 shows
Electric field sectional view corresponding to peak position III in Figure 10.Figure 13 is shown as two silver nanoparticle balls delustring collection of illustrative plates under different spacing.
This it appears that under z polarizes, between silver nanoparticle ball, surface plasma body resonant vibration does not couple.And under y-polarisation,
Substantially coupling occurs, and its resonance peak is due to coupling repulsive interaction red shift.Along with the spacing of two balls reduces, coupling increases
By force, peak position gets over red shift, strengthens and covers broader wave band.
Referring to Figure 14 to Figure 20 again, wherein, Figure 14 is shown as in germanium, and radius is three silver nanoparticle ball one-tenth etc. of 10nm
Limit rounded projections arranged and spacing d=0nm, the delustring collection of illustrative plates under y and z polarizes.Figure 15 is shown as in germanium, and radius is 10nm
Three silver nanoparticle balls become isosceles right triangle to arrange, the delustring collection of illustrative plates under y-polarisation, different spacing.Figure 16 is shown as
In germanium, radius is that three silver nanoparticle balls of 10nm become triangular arranged, the delustring collection of illustrative plates under y-polarisation, different spacing.
Figure 17 is shown as in germanium, radius be three silver nanoparticle sphere gaps of 10nm be 0nm, become triangular arranged and isosceles straight
Extinction spectra contrast under two kinds of situations of angle rounded projections arranged, under y-polarisation.Figure 18 is shown as in Figure 17 corresponding to peak position IV
Electric field sectional view.Figure 19 is shown as the electric field sectional view in Figure 17 corresponding to peak position V.Figure 20 is shown as in germanium, and half
Footpath is that three silver nanoparticle balls of 10nm become triangular arranged and spacing d=0nm, as shown in Figure 6 under situation, receives three
Rice ball central point about the z axis rotates 0 ° and 30 ° of extinction spectras obtained.
It can be seen that similar with conclusion before, under z polarizes, nanosphere surface plasma body resonant vibration does not couple.And
Under y-polarisation, substantially coupling occurs, and its resonance peak is due to coupling repulsive interaction red shift.And can according to Figure 17 and Figure 20
To find, extinction spectra is insensitive with the relative position of silver nanoparticle ball.This influence factor that can reduce during experiment, contributes to reality
Test realization.
Contrasting all results, the principal element affecting extinction spectra is that the spacing between silver nanoparticle ball (can be led in actual applications
The density crossing control silver nano-grain realizes).In actual applications, by controlling the density of particle, can effectively control
Strengthen the spectral range of germanium photoelectric respone from visible ray to near-infrared.
In sum, the germanium silver composite material of the present invention includes intrinsic germanium and is embedded in the silver nano-grain in described intrinsic germanium, wherein,
Silver nano-grain can by ion implantation by silver ion implantation to intrinsic germanium and annealing obtain.The present invention can utilize silver nanoparticle
The local surface plasma resonance humidification of particle, and surface plasma body resonant vibration coupling repulsive interaction between nano particle,
Regulation and control resonant check peak position frequency is near infrared band, thus strengthens the germanium photoelectric respone near infrared band.By controlling nanometer
Argent grain density in intrinsic germanium, can effectively control to strengthen the spectral range of germanium photoelectric respone from visible ray to near-infrared.
So, the present invention effectively overcomes various shortcoming of the prior art and has high industrial utilization.
The principle of above-described embodiment only illustrative present invention and effect thereof, not for limiting the present invention.Any it is familiar with this skill
Above-described embodiment all can be modified under the spirit and the scope of the present invention or change by the personage of art.Therefore, such as
All that in art, tool usually intellectual is completed under without departing from disclosed spirit and technological thought etc.
Effect is modified or changes, and must be contained by the claim of the present invention.
Claims (11)
1. a germanium silver composite material, it is characterised in that: described germanium silver composite material includes intrinsic germanium and is embedded in the silver in described intrinsic germanium
Nano particle.
Germanium silver composite material the most according to claim 1, it is characterised in that: described germanium silver composite material is to pass through ion implantation
By in silver ion implantation to intrinsic germanium and anneal obtain.
Germanium silver composite material the most according to claim 2, it is characterised in that: the atmosphere of described annealing is inert gas, annealing temperature
Degree scope is 700-900 degree Celsius.
Germanium silver composite material the most according to claim 1, it is characterised in that: the average particle size range of described silver nano-grain is
1～50nm.
Germanium silver composite material the most according to claim 1, it is characterised in that: in described germanium silver composite material, the atom accounting of silver
Less than 5%.
6. germanium silver composite material application in the opto-electronic device, it is characterised in that: described germanium silver composite material uses such as claim
Germanium silver composite material described in 1～5 any one.
Germanium silver composite material the most according to claim 6 application in the opto-electronic device, it is characterised in that: described application is to utilize
The local surface plasma resonance humidification of silver nano-grain, strengthens the germanium photoelectric respone near infrared band.
Germanium silver composite material the most according to claim 6 application in the opto-electronic device, it is characterised in that: described application is to utilize
Surface plasma body resonant vibration coupling between local surface plasma resonance humidification and the silver nano-grain of silver nano-grain
Closing repulsive interaction, regulation and control resonant check peak position frequency is near infrared band.
Germanium silver composite material the most according to claim 6 application in the opto-electronic device, it is characterised in that: described application is by germanium
Silver composite material is as the intrinsic layer material of PIN photodiode.
Germanium silver composite material the most according to claim 9 application in the opto-electronic device, it is characterised in that: described PIN photoelectricity
Diode includes p-type heavily doped layer and N-type heavily doped layer；Described intrinsic layer is formed at described p-type heavily doped layer and N-type
Between heavily doped layer；Described p-type heavily doped layer surface is formed with anti-reflection film and the first electrode, described N-type heavily doped layer table
Face is formed with the second electrode.
The application in the opto-electronic device of 11. germanium silver composite materials according to claim 10, it is characterised in that: described intrinsic layer
Thickness is more than described p-type heavily doped layer or the thickness of N-type heavily doped layer.
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