CN105846412A - Surge protection device - Google Patents
Surge protection device Download PDFInfo
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- CN105846412A CN105846412A CN201510013098.9A CN201510013098A CN105846412A CN 105846412 A CN105846412 A CN 105846412A CN 201510013098 A CN201510013098 A CN 201510013098A CN 105846412 A CN105846412 A CN 105846412A
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- transistor
- zener diode
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- anode
- resistance
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- 230000015556 catabolic process Effects 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 230000005611 electricity Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000005034 decoration Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Abstract
The invention provides a surge protection device. Whether there is a generated surge or not is detected through a first Zener diode and a second Zener diode. When no surge is generated, only the first Zener diode is collapsed and connected, and then a first transistor is controlled to be connected. A power input end can directly supply power to a load connected to a power output end. When the surge is generated, the second Zener diode is collapsed and connected, and then the first transistor is controlled not to be connected. The power input end cannot supply power to the load, so as to protect the load from being damaged by the surge. Through the control of the connection of the first transistor, the device achieves a purpose of protecting the load from being damaged by the surge. Moreover, there is no need of a surge protection unit for bearing a large voltage, so as to reduce the manufacture cost.
Description
Technical field
The present invention relates to a kind of surge protection means, a kind of effective isolation surge voltage enters the surging of load end and protects
Protection unit.
Background technology
Refer to shown in Fig. 3, existing surge protection means 30 have a power input Vin, an earth terminal GND,
One commutation diode D, Zener diode ZD, a resistance R, a transistor Q, a positive output end 31, are negative defeated
Go out end 32 and a surging protected location 33.
The anode of this commutation diode D is connected to this power input Vin, and the negative electrode of this commutation diode D is connected to
This positive output end 31.This surging protected location 33 has a positive pole and a negative pole, the positive pole of this surging protected location 33 with
And the negative electrode of this Zener diode ZD is all connected to the negative electrode of this commutation diode D.The negative pole of this surging protected location 33
It is connected to this earth terminal GND.The anode of this Zener diode ZD is connected to this earth terminal GND by this resistance R.
This surging protected location 33 detects the voltage difference between its positive and negative electrode, and when voltage difference is more than a conducting voltage, order should
Turn between positive and negative electrode, and the electric energy flowed through is converted into heat energy release.
The grid of this transistor Q is connected to the anode of this Zener diode ZD, and its source electrode is connected to this earth terminal GND,
Its source electrode is connected to this negative output terminal 32.
Under normal use, this positive output end 31 is connected to a load with this negative output terminal 32, to provide this electric energy loaded,
This load normal power-up is made to use.For example, this load is a light emitting diode (LED) device 40.
When this power input Vin regular supply power supply, the magnitude of voltage of this power supply collapses more than this Zener diode ZD's
Routed voltage, but less than the conducting voltage of this surging protected location 33, therefore this Zener diode ZD turns on and this surging
Protected location 33 is not turned on.Turn on because of this Zener diode ZD collapse, make this resistance R have electric current to flow through and produce
Cross-pressure, and then cause that there is between the gate-to-source of this transistor Q the cross-pressure that this resistance R produces, make this transistor Q
Conducting, the electric energy making this power input Vin provide directly feeds this LED matrix 40, and by this transistor Q's
Drain electrode and source electrode and form loop, make this LED matrix 40 normal power-up and luminous.
Refer to shown in Fig. 4, but when this power input Vin produces surging, because the magnitude of voltage of this surging is much larger than
The magnitude of voltage of the power supply of regular supply, and more than the conducting voltage of this surging protected location 33, make this surging protected location
33 conductings, make this surging be got rid of to this earth terminal via this surging protected location 33, it is to avoid surging damages this LED
Device 40, and converted electrical energy into by this surging protected location 33 and become heat energy and discharged.
But the design of existing surge protection means 30 is got rid of surging by this surging protected location 33, protects this LED
Device 40, therefore this surging protected location 33 certainly will the high voltage of surging to be born, could effectively protect this LED to fill
Put 40.When the maximum of this surging protected location 33 pressure the highest time, its cost of manufacture is the highest, so draw high this dash forward
The integral manufacturing cost of ripple protection device 30, therefore the surge protection means 30 of prior art certainly will further be changed
Good.
Summary of the invention
In view of this, present invention is primarily targeted at the surge protection means after a kind of improvement is provided, to reduce its system
Make cost.
To achieve the above object of the invention, technical way of the present invention is to make this surge protection means comprise
Have:
One commutation diode, its anode is connected to a power input；
One first Zener diode, its negative electrode is connected to the negative electrode of this commutation diode；
One second Zener diode, its negative electrode is connected to the negative electrode of this commutation diode；
One the first transistor, has a drain electrode, a grid and a source electrode, and this drain electrode is connected to a power output end, should
Source electrode is connected to the negative electrode of this commutation diode；
One first resistance, is connected between the grid of this first transistor and source electrode；
One transistor seconds, has a collector, a base stage and an emitter-base bandgap grading, and its collector is connected to the grid of this first transistor
Pole, its emitter-base bandgap grading is connected to an earth terminal；
One third transistor, has a collector, a base stage and an emitter-base bandgap grading, and its collector is connected to the base of this transistor seconds
Pole, its emitter-base bandgap grading is connected to this earth terminal；
One first partial pressure unit, is connected between the anode of this first Zener diode and this earth terminal, and by this first
The anode voltage of Zener diode exports the base stage to this transistor seconds after carrying out dividing potential drop；
One second partial pressure unit, is connected between the anode of this second Zener diode and this earth terminal, and by this second
The anode voltage of Zener diode exports the base stage to this third transistor after carrying out dividing potential drop；
Wherein the breakdown voltage of this first Zener diode is less than the breakdown voltage of this second Zener diode.
When normal power supply, the voltage of this power input, more than the breakdown voltage of this first Zener diode, therefore should
First Zener diode collapses and turns on, and produces dividing potential drop offer to this transistor seconds by this first partial pressure unit
Base stage.The emitter grounding of this transistor seconds, and its base stage obtain this first partial pressure unit provide dividing potential drop, cause this
Turn between collector and the emitter-base bandgap grading of transistor seconds, make electric current that this power input inputs can by this first resistance,
And flow through the collector of this transistor seconds and emitter-base bandgap grading and ground connection to form current loop.
Now, having pressure reduction because of the cross-pressure of this first electricity group between the Source-Gate of this first transistor, order should
Turning between source electrode and the drain electrode of the first transistor, the electric energy making this power input provide can be by this first transistor
Source electrode and drain conduction to this power output end, be connected to the load of this power output end with supply of electrical energy to.
When surging produces, the voltage of this power input can be drawn high suddenly, thus exceedes this second Zener diode
Breakdown voltage, causes this second Zener diode also to collapse and turn on, and is carried by this second partial pressure unit generation dividing potential drop
It is supplied to the base stage of this third transistor.The emitter grounding of this third transistor, and its base stage obtains this second partial pressure unit
The dividing potential drop provided, causes and turns between the collector of this third transistor and emitter-base bandgap grading.And the base stage of this electricity two-transistor connects
To the collector of this third transistor, and because turning between collector and the emitter-base bandgap grading of this third transistor, make this second crystal
The base stage of pipe, by this third transistor ground connection, causes the base stage of this transistor seconds not pressed with emitter-base bandgap grading all ground connection
Difference, makes to be not turned between the collector of this transistor seconds and emitter-base bandgap grading.
And then cause this first resistance not have electric current to flow through, make not have between the source electrode of this first transistor and grid pressure reduction
And be not turned on, therefore open a way between this power input and this power output end, to avoid surging to enter this power output end
The load being connected to this power output end is caused to damage because of Tu Bo.
By this circuit design, i.e. can reach the function of surging protection, when surging produces, it is to avoid surging conducts extremely
Load, to protect load end not damaged by surging.By the conducting of this second Zener diode, control further this
It is not turned between drain electrode and the source electrode of one transistor, makes the surging entered by this this power input cannot be transferred to this electricity
Source output terminal, to guarantee that this load will not be damaged by this surging.The present invention need not be provided with to be needed to bear big voltage
Surging protected location, is only reached the function of surging protection, to reduce cost of manufacture by several simple electronic components
Purpose.
Accompanying drawing explanation
Fig. 1 is the current direction schematic diagram when circuit of present pre-ferred embodiments and normal use.
Fig. 2 is current direction schematic diagram during circuit and the surging generation of present pre-ferred embodiments.
Fig. 3 is the current direction schematic diagram when circuit of existing surge protection means and normal use.
Fig. 4 is current direction schematic diagram during circuit and the surging generation of existing surge protection means.
Drawing reference numeral
10 surge protection means
11 first partial pressure unit 12 second partial pressure unit
30 surge protection means
31 positive output end 32 negative output terminals
33 surging protected locations
40 LED matrix
Detailed description of the invention
Hereinafter coordinate accompanying drawing and present pre-ferred embodiments, the present invention is expanded on further and is adopted by reaching predetermined goal of the invention
The technological means taken.
Referring to shown in Fig. 1, surge protection means 10 of the present invention includes a commutation diode D1, one first Zener two
Pole pipe ZD1, one second Zener diode ZD2, a first transistor Q1, a transistor seconds Q2, one the 3rd crystal
Pipe Q3, one first resistance R1, one first partial pressure unit 11,1 second partial pressure unit 12, power input Vin,
An one power output end Vout and earth terminal GND.The breakdown voltage of this first Zener diode ZD1 is second neat less than this
Receive the breakdown voltage of diode ZD2.
The anode of this commutation diode D1 is connected to this power input Vin, the negative electrode of this first Zener diode ZD1
With the negative electrode that the negative electrode of this second Zener diode ZD2 is all connected to this commutation diode D1.
This first transistor Q1 has a drain electrode, a grid and a source electrode, and this drain electrode is connected to this power output end
Vout, this source electrode is connected to the negative electrode of this commutation diode D1, and this first resistance R1 is connected to this first transistor
Between grid and the source electrode of Q1.
This transistor seconds Q2 and this third transistor Q3 are respectively provided with a collector, a base stage and an emitter-base bandgap grading.This is second years old
The collector of transistor Q2 is connected to the grid of this first transistor Q1, and the emitter-base bandgap grading of this transistor seconds Q2 is connected to this
Earth terminal GND.The collector of this third transistor Q3 is connected to the base stage of this transistor seconds Q2, and the 3rd crystal
The emitter-base bandgap grading of pipe Q3 is connected to this earth terminal GND.
This first partial pressure unit 11 is connected between anode and this earth terminal GND of this first Zener diode ZD1, with
The base stage to this transistor seconds Q2 is exported after the anode voltage of this first Zener diode ZD1 is carried out dividing potential drop.
This second partial pressure unit 12 is then connected between anode and this earth terminal GND of this second Zener diode ZD2,
The base stage to this thirdly transistor Q3 is exported after carrying out dividing potential drop with the anode voltage by this second Zener diode ZD2.
When normal power supply, the voltage of this power input Vin can be more than the collapse electricity of this first Zener diode ZD1
Pressure, causes this first Zener diode ZD1 collapse to turn on.And this first partial pressure unit 11 is by this first Zener two pole
The anode voltage of pipe ZD1 provides the base stage to this transistor seconds Q2 after carrying out dividing potential drop.This transistor seconds Q2 penetrates
Pole ground connection, and its base stage receive this first partial pressure unit 11 provide voltage, the therefore collector of this transistor seconds Q2
And turning between emitter-base bandgap grading, the electric current allowing this power input Vin input can flow through this first resistance R1 and this second crystalline substance
Ground connection after the collector of body pipe Q2 and emitter-base bandgap grading, to form current loop.
Because this first resistance R1 has electric current to flow through, make the two ends of this first resistance R1 have cross-pressure, make this first brilliant
There is between source electrode and the grid of body pipe Q1 pressure reduction, thus make to turn between the source electrode of this first transistor Q1 and drain electrode,
Make electric energy that this power input Vin provides by this first transistor Q1 conduction to this power output end Vout, for
A load 20 being connected to this power output end Vout is caused to electric energy.
Referring to shown in Fig. 2, when surging produces, the voltage of this power input Vin can be drawn high suddenly, thus exceedes
The breakdown voltage of this second Zener diode ZD2, makes this second Zener diode ZD2 collapse turn on.This second point
Pressure unit 12 provides the base stage to this third transistor Q3 after the anode voltage dividing potential drop of this second Zener diode ZD2.
The emitter grounding of this third transistor Q3, and its base stage receive this second partial pressure unit 12 provide voltage, therefore should
Turn between collector and the emitter-base bandgap grading of third transistor Q3, make the base stage of this transistor seconds Q2 by this third transistor
The collector of Q3 and emitter-base bandgap grading are connected to this earth terminal GND.
Because the base earth of this transistor seconds Q2, and its emitter grounding so that the collector of this transistor seconds Q2
And it is not turned between emitter-base bandgap grading.And this power input Vin input electric current also cannot flow through this first resistance R1 and
Ground connection after the collector of this transistor seconds Q2 and emitter-base bandgap grading, it is impossible to form current loop.This first resistance R1 does not have electricity
Stream flows through, and cross-pressure also would not be had to produce.Therefore do not have between source electrode and the grid of this first transistor Q1
Pressure reduction, therefore be not turned between the source electrode of this first transistor Q1 and drain electrode.The electricity that this power input Vin provides is the most just
Can not be conducted to this power output end Vout by this first transistor Q1, thus reach the protection when surging produces and be somebody's turn to do
The function that load 20 is not damaged by surging.
Surge protection means of the present invention can not only reach, when surging produces, the merit that protection load 20 is not damaged by surging
Can, and when surging produces, by the conducting of this second Zener diode ZD2, control this first transistor further
It is not turned between drain electrode and the source electrode of Q1, makes the surging entered by this this power input Vin cannot be transferred to this power supply
Output end vo ut, to guarantee that this load 20 will not be damaged by this surging.Therefore the present invention need not be provided with needs and bear greatly
The surging protected location of voltage, by arranging whether this second Zener diode ZD2 judges the generation of surging, goes forward side by side
One step controls whether to supply power to load 20, is only reached the function of surging protection by several simple electronic components, therefore really energy
Effectively reduce cost of manufacture.
Furthermore, this first partial pressure unit 11 is made up of the electric three resistance R3 series connection of one second resistance R2 and,
The contact of connecting of this second resistance R2 and the 3rd resistance R3 is connected to the base stage of this transistor seconds Q2, this second electricity
Resistance R2 is connected between anode and the base stage of this transistor seconds Q2 of this first Zener diode ZD1, and the 3rd
Resistance R3 is connected between the base stage of this transistor seconds Q2 and this earth terminal GND.
This second partial pressure unit 12 is connected by one the 4th resistance R4 and one the 5th resistance R5 and is constituted, the 4th resistance R4
With the base stage that the contact of connecting of the 5th resistance R5 is connected to this third transistor Q3, the 4th resistance R4 is connected to this
Between anode and the base stage of this third transistor Q3 of the second Zener diode ZD2, and the 5th resistance R5 is connected to
Between the base stage of this third transistor Q3 and this earth terminal GND.
The above is only presently preferred embodiments of the present invention, and the present invention not does any pro forma restriction, though
So the present invention is disclosed above with preferred embodiment, but is not limited to the present invention, relevant technical staff in the field,
In the range of without departing from technical solution of the present invention, when the technology contents of available the disclosure above makes a little change or repaiies
Decorations are the Equivalent embodiments of equivalent variations, as long as being the content without departing from technical solution of the present invention, according to the skill of the present invention
Any simple modification, equivalent variations and the modification that above example is made by art essence, all still falls within the technology of the present invention side
In the range of case.
Claims (3)
1. a surge protection means, it is characterised in that described surge protection means includes:
One commutation diode, its anode is connected to a power input；
One first Zener diode, its negative electrode is connected to the negative electrode of described commutation diode；
One second Zener diode, its negative electrode is connected to the negative electrode of described commutation diode；
One the first transistor, has a drain electrode, a grid and a source electrode, and described drain electrode is connected to a power output end,
Described source electrode is connected to the negative electrode of described commutation diode；
One first resistance, is connected between grid and the source electrode of described the first transistor；
One transistor seconds, has a collector, a base stage and an emitter-base bandgap grading, and its collector is connected to described the first transistor
Grid, its emitter-base bandgap grading is connected to an earth terminal；
One third transistor, has a collector, a base stage and an emitter-base bandgap grading, and its collector is connected to described transistor seconds
Base stage, its emitter-base bandgap grading is connected to described earth terminal；
One first partial pressure unit, is connected between anode and the described earth terminal of described first Zener diode, and by institute
State the anode voltage of the first Zener diode and carry out output after dividing potential drop to the base stage of described transistor seconds；
One second partial pressure unit, is connected between anode and the described earth terminal of described second Zener diode, and by institute
State the anode voltage of the second Zener diode and carry out output after dividing potential drop to the base stage of described third transistor；
The breakdown voltage of wherein said first Zener diode is less than the breakdown voltage of described second Zener diode.
Surge protection means the most according to claim 1, it is characterised in that described first partial pressure unit includes:
One second resistance, is connected between anode and the base stage of described transistor seconds of described first Zener diode；
One the 3rd resistance, is connected between the base stage of described transistor seconds and described earth terminal.
Surge protection means the most according to claim 1 and 2, it is characterised in that described second partial pressure unit bag
Contain:
One the 4th resistance, is connected between anode and the base stage of described third transistor of described second Zener diode；
One the 5th resistance, is connected between the base stage of described third transistor and described earth terminal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510013098.9A CN105846412B (en) | 2015-01-12 | 2015-01-12 | Surge protection means |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510013098.9A CN105846412B (en) | 2015-01-12 | 2015-01-12 | Surge protection means |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105846412A true CN105846412A (en) | 2016-08-10 |
| CN105846412B CN105846412B (en) | 2018-07-24 |
Family
ID=57177949
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510013098.9A Expired - Fee Related CN105846412B (en) | 2015-01-12 | 2015-01-12 | Surge protection means |
Country Status (1)
| Country | Link |
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| CN (1) | CN105846412B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110474309A (en) * | 2019-08-20 | 2019-11-19 | 广东浪潮大数据研究有限公司 | Inhibit the circuit of electric current of surging |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101242090A (en) * | 2007-02-08 | 2008-08-13 | 鸿富锦精密工业（深圳）有限公司 | Over-voltage protector |
| CN101562327A (en) * | 2008-04-17 | 2009-10-21 | 德信智能手机技术（北京）有限公司 | Overvoltage protective device in wireless fixed phone charging mode |
| CN102270839A (en) * | 2010-06-07 | 2011-12-07 | 飞利浦建兴数位科技股份有限公司 | Electronic device with protective circuit |
| CN203301144U (en) * | 2013-05-28 | 2013-11-20 | 湖北天运汽车电器系统有限公司 | Vehicle-mounted power supply surge protection circuit |
-
2015
- 2015-01-12 CN CN201510013098.9A patent/CN105846412B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101242090A (en) * | 2007-02-08 | 2008-08-13 | 鸿富锦精密工业（深圳）有限公司 | Over-voltage protector |
| CN101562327A (en) * | 2008-04-17 | 2009-10-21 | 德信智能手机技术（北京）有限公司 | Overvoltage protective device in wireless fixed phone charging mode |
| CN102270839A (en) * | 2010-06-07 | 2011-12-07 | 飞利浦建兴数位科技股份有限公司 | Electronic device with protective circuit |
| CN203301144U (en) * | 2013-05-28 | 2013-11-20 | 湖北天运汽车电器系统有限公司 | Vehicle-mounted power supply surge protection circuit |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110474309A (en) * | 2019-08-20 | 2019-11-19 | 广东浪潮大数据研究有限公司 | Inhibit the circuit of electric current of surging |
| CN110474309B (en) * | 2019-08-20 | 2021-10-15 | 广东浪潮大数据研究有限公司 | Circuit for restraining surge current |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105846412B (en) | 2018-07-24 |
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Granted publication date: 20180724 |