CN105845757A - Bendable solar chip capable of optimizing thickness and conversion efficiency - Google Patents
Bendable solar chip capable of optimizing thickness and conversion efficiency Download PDFInfo
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- CN105845757A CN105845757A CN201510018011.7A CN201510018011A CN105845757A CN 105845757 A CN105845757 A CN 105845757A CN 201510018011 A CN201510018011 A CN 201510018011A CN 105845757 A CN105845757 A CN 105845757A
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- solar chip
- thickness
- nanostructured
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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Abstract
The invention discloses a bendable solar chip capable of optimizing thickness and conversion efficiency, and the chip is provided with a solar chip body which is provided with a top surface, a bottom surface and four sides; and a nano structure which is located at the sides. The thickness of the solar chip body is within the range from 50 microns to 120 microns, or within the range from 120 microns to 140 microns, or within the range from 140 microns to 160 microns. Moreover, the depth of the nano structure is within the range from 2 microns to 8 microns.
Description
Technical field
The invention relates to solar chip, especially with regard to optimizing thickness and energy conversion efficiency
Flexible solar chip.
Background technology
Being made up of fragile material owing to solar chip is usually, solar chip is manufacturing or was transporting
The Cheng Zhongnai easily embrittlement because of External Force Acting.For avoiding solar chip impaired, known some have been used to protect
Protect measure-such as protective bag.But, a tradition solar chip still may be subject to because of regional area stress
Damage.
In a typical manufacturing facility, embrittlement problem the solar chip loss caused may be up to
5-10%.At solar chip, this problem is required that slimming as far as possible is to reduce the situation of material cost
Lower meeting more deteriorates.
For solving this problem, the practice known in be use thin-film material to manufacture solar chip, and its
Related art scheme is found in US6,887,650 (relating to the manufacture method of film apparatus), US
6,682,990 (relating to the manufacture method of thin film single crystal silicon solar chip), US 6,452,091 (are
Be related to the manufacture method of thin film single crystal device and solar energy module), US 5,000,816 (relates to
Divest the technical scheme of a thin film from a substrate) and US 4,855,012 (relate in order to from one
Substrate divests drawing high (pull-raising) parts and drawing high (pull-raising) unit of a thin film).
But, the solar chip owing to being made up of thin-film material cannot provide high energy conversion effect
Rate, it is only applicable in some specific application.
Another practice is to make a thin substrate be sandwiched in two flexible Plastic Package layers to provide elastic, its
Technical scheme such as US 8,450,184 is taken off (to be related to utilize the stripping effect manufacture caused by stress
The method of film substrate).But, owing to the method must use extra material layer and multiple pastes step,
Its manufacturing cost will thus increase.
It addition, refer to Fig. 1, it illustrates the rupture stress (failure stress) of tradition solar chip
A scatter chart to thickness.As it is shown in figure 1, rupture stress at thickness equal to having near 200 μm
One peak value, and precipitous decline after thickness diminishes.Also, refer to Fig. 2, it illustrates tradition solar energy
The energy conversion efficiency of a chip scatter chart to thickness.As in figure 2 it is shown, energy conversion efficiency
Can precipitous decline after thickness is less than 50 μm.
If from the foregoing, one tradition solar chip thickness be reduced near 50 μm, its by because of
Rupture stress becomes fairly small and easy embrittlement.Therefore, would become hard to obtain according to the known practice and have simultaneously
There is the slim solar chip of high rupture stress and high-energy conversion efficiency.
For solving the problems referred to above, need the solar chip structure of a novelty badly.
Summary of the invention
One purpose of the present invention be to provide a kind of optimize thickness and conversion efficiency flexible too
Sun can chip, to improve defect present in known technology.
For achieving the above object, the present invention provides optimized thickness and energy conversion efficiency flexible
Solar chip, it has:
One solar chip body, it has an end face, a bottom surface and four sides；And
One layer of nanostructured, it is positioned on described side, wherein this solar chip body have between
Thickness between 50 μm to 120 μm, and this layer of nanostructured have between 2 μm to 8 μm
The degree of depth.
In one embodiment, this solar chip body uses an amorphous phase (amorphous) base material.
In one embodiment, this solar chip body uses monocrystalline phase (single-crystal) base material.
In one embodiment, this solar chip body uses crystalline phase more than (polycrystalline) base material.
In one embodiment, this solar chip body use material be by glass, silicon, germanium, carbon,
Aluminum, gallium nitride, GaAs, gallium phosphide, aluminium nitride, sapphire, spinelle, aluminium oxide, carbonization
A kind of material selected by group that silicon, zinc oxide, magnesium oxide, aluminium oxide lithium and gallium oxide lithium are formed
Material.
In one embodiment, described nanostructured is to be formed by an electrochemical etching process.
In one embodiment, described nanostructured is to be formed by a depositing operation.
The present invention also provides for a kind of flexible solar energy core optimizing thickness and energy conversion efficiency
Sheet, it has:
One solar chip body, it has an end face, a bottom surface and four sides；And
One layer of nanostructured, it is positioned on described side, wherein this solar chip body have between
Thickness between 120 μm to 140 μm, and this layer of nanostructured have between 2 μm to 8 μm
The degree of depth.
The present invention also provides for a kind of flexible solar energy core optimizing thickness and energy conversion efficiency
Sheet, it has:
One solar chip body, it has an end face, a bottom surface and four sides；And
One layer of nanostructured, it is positioned on described side, wherein this solar chip body have between
Thickness between 140 μm to 160 μm, and this layer of nanostructured have between 2 μm to 8 μm
The degree of depth.
The solar chip of the present invention, can avoid stress concentration at a regional area.
The solar chip of the present invention, it has a thin thickness and has high bending strength and height simultaneously
Energy conversion efficiency.
The solar chip of the present invention, can improve the yield of solar chip.
Accompanying drawing explanation
For the structure of the present invention, feature and purpose thereof can be further appreciated that, in conjunction with accompanying drawing and the most concrete
Embodiment elaborates.Wherein:
Fig. 1 illustrates the rupture stress of a tradition solar chip scatter chart to thickness.
Fig. 2 illustrates the energy conversion efficiency of a tradition solar chip scatter chart to thickness.
Fig. 3 illustrates the structure chart of solar chip one embodiment of the present invention.
Fig. 4 illustrates the solar chip with nanostructured and the solar chip without nanostructured
Energy conversion efficiency comparison diagram.
Fig. 5 illustrates two I-V curve, and wherein one is derived from a solar energy core with nanostructured
Sheet, and another is derived from a solar chip without nanostructured.
Fig. 6 illustrates a bending strength test knot of the solar chip of the nanostructured with different depth
Really.
Fig. 7 illustrates a design window (design window) proposed by the invention, is by between about
The garden sheet thickness of 50 μm to about 120 μm and between the nanostructured degree of depth institute of about 2 μm to about 8 μm
Define.
It is strong that Fig. 8 illustrates the bending under the different nanostructured degree of depth of two kinds of various sizes of solar chips
Degree test result.
Detailed description of the invention
Refer to Fig. 3, it illustrates the structure chart of solar chip one embodiment of the present invention.Such as Fig. 3 institute
Showing, this solar chip includes a solar chip body 100 and one layer of nanostructured 110.
For reducing material cost, the thickness of solar chip body 100 is between about 50 μm the most extremely
About 120 μm.In this thickness range, the energy conversion efficiency of solar chip can remain within one
Near peak value (as in figure 2 it is shown, this peak value is about 30%).
As it is shown on figure 3, solar chip body 100 have end face 101, bottom surface 102 and
Four sides 103, wherein end face 101 is to receive incident illumination and provide a plurality of first electrically to connect
Point, and bottom surface 102 is provided for a plurality of second electric terminal.
When light is radiated on end face 101, this solar chip can be via described first electric terminal
Electric power is provided with described second electric terminal.Solar chip body 100 can use an amorphous phase base material,
One monocrystalline phase base material or crystalline phase base material more than.It addition, the base material of solar chip body 100 can be
By glass (SiO2), silicon (Si), germanium (Ge), carbon (C), aluminum (Al), gallium nitride (GaN), GaAs (GaAs),
Gallium phosphide (GaP), aluminium nitride (AlN), sapphire, spinelle, aluminium oxide (Al2O3), carborundum (SiC),
Zinc oxide (ZnO), magnesium oxide (MgO), aluminium oxide lithium (LiAlO2) and gallium oxide lithium (LiGaO2) institute
A kind of material selected by group of composition.
Additionally, solar chip body 100 can have a p-type semiconductor layer and in this p-type semiconductor
A n-type semiconductor layer above Ceng is to provide a p-n junction so that photon is changed into electric power.
This layer of nanostructured 110, preferably has the degree of depth between 2 μm to 8 μm, is shape
To strengthen the rupture stress bearing value of solar chip body 100 on side 103 described in Cheng Yu, thus
Solar chip body 100 is made to become flexible.Its principle is, when an active force is applied to the sun
On energy chip body 100, owing to the nanostructured 110 on each described side 103 has this work of absorption
Ability firmly, this active force is to be dispersed to each described side 103, thus significantly strengthens the sun
The bending strength (ability of opposing bending stress) of energy chip body 100.
This layer of nanostructured 110 can be formed by an electrochemical etching process or a depositing operation, and at this
Before electrochemical etching process, can first use mononitride to remove program and (utilize H3PO4At 160 DEG C
Act on 30 minutes), a pyramid structure (pyramid texture) remove program (utilize HNA effect 7
Minute) and an autoxidation (native oxide) deposition procedure (utilize H2SO4Act at 85 DEG C
10 minutes) process solar chip body 100.
The degree of depth of this layer of nanostructured 110 can be by changing described electrochemical etching process or described deposition work
Process time of skill and adjusted.It is said that in general, this layer around solar chip body 100 is received
Solar chip body 100 can be made to have when the degree of depth of rice structure 110 is between 2 μm to 8 μm prominent
The powerful bending strength gone out.
It addition, the formation process of this layer of nanostructured 110 can be prior to or subsequent to solar chip body
Solar chip formation process on 100.That is, this layer of nanostructured 110 can be at solar chip
A base material of solar chip body 100 is formed at after being constructed described side 103 again
On, or be i.e. formed at before solar chip is constructed the most on the substrate on described side 103.
Refer to Fig. 4, it illustrates has the solar chip of nanostructured and does not have nanostructured
The energy conversion efficiency comparison diagram of solar chip.As seen from Figure 4, there is the sun of nanostructured
Can the energy conversion efficiency of chip and not there is the energy conversion efficiency of solar chip of nanostructured
Almost identical.That is, there is the solar chip of nanostructured when providing powerful bending strength not
Energy conversion efficiency can be sacrificed.
Refer to Fig. 5, it illustrates two I-V (current-voltage) curves, and wherein one is derived from a tool
There is the solar chip of nanostructured, and another is derived from a solar energy core without nanostructured
Sheet.As seen from Figure 5, there is the I-V curve of the solar chip of nanostructured and not there is nanometer
The I-V curve of the solar chip of structure is almost identical.That is, there is the solar energy core of nanostructured
Sheet can't sacrifice I-V characteristic when providing powerful bending strength.
Refer to Fig. 6, it illustrates the bending of solar chip of the nanostructured with different depth
Strength test results.As seen from Figure 6, the most do not have nanostructured solar chip (that is,
Its nanostructured degree of depth is 0 μm) bending strength be about 0.17GPa, and solar chip is in its nanometer
Constructional depth be bending strength when 2 μm, 4 μm, 6 μm respectively may be about 0.23GPa, 0.29GPa,
And 0.32GPa, far above the bending strength of the solar chip the most without nanostructured.Additionally,
Owing to the bending strength of solar chip can tend to saturated when the nanostructured degree of depth is more than 6 μm, therefore this
Invention is to be located between 2 μm to 8 μm by preferably depth bounds.
That is, when the degree of depth of nanostructured layers is between about 2 μm to about 8 μm, there is cost benefit
It can make a thin solar chip (its thickness is between about 50 μm to about 120 μm) have powerful simultaneously
Bending strength and high-energy conversion efficiency.
So far, the present invention has pointed out a design window and selects thickness and the side thereof of a garden sheet for maker
On nanostructured layer depth so that a slim solar chip have simultaneously powerful bending strength and
High-energy conversion efficiency.The design window concept of the present invention can become apparent from after with reference to Fig. 7.
Fig. 7 illustrates a design window proposed by the invention, its be by between about 50 μm to about 120 μm
Garden sheet thickness and defined to the nanostructured degree of depth of about 8 μm between about 2 μm.Can be seen by Fig. 7
Going out, the solar chip manufactured by design window represents powerful bending strength simultaneously and (is more than according to this
0.23GPa) and high-energy conversion efficiency (about 30%).
Referring again to Fig. 8, it is deep in different nanostructureds that it illustrates two kinds of various sizes of solar chips
Bending strength test result under Du.As seen from Figure 8, two groups of solar chip (chis of one of which
Very little be 15 centimetres and take advantage of 15 centimetres and another group is 6 centimetres and takes advantage of 2 centimetres) bending strength relative to nanometer
The change of constructional depth represents identical trend.That is, the most not there is the solar energy core of nanostructured
The bending strength of sheet (that is, its nanostructured degree of depth is 0 μm) is about 0.17GPa, and solar energy core
Sheet its nanostructured degree of depth be bending strength when 2 μm, 4 μm, 6 μm respectively may be about 0.23GPa,
0.29GPa and 0.32GPa is strong far above the bending of the solar chip the most without nanostructured
Degree.
According to above-mentioned design, the present invention has following effect:
1, the solar chip of the present invention can avoid stress concentration at a regional area.
2, the solar chip of the present invention can have a thin thickness and have simultaneously high bending strength and
High-energy conversion efficiency.
3, the solar chip of the present invention can improve the yield of himself.
Disclosed is preferred embodiment, such as local change or modification and come from the present invention
Technological thought and be prone to deduce by those skilled in the art, such as, by the thickness of solar chip
Degree changes between about 120 μm to about 140 μm, or between about 140 μm to about 160 μm,
All claim categories not taking off the present invention.
Claims (8)
1. can optimize a flexible solar chip for thickness and energy conversion efficiency, it has:
One solar chip body, it has an end face, a bottom surface and four sides；And
One layer of nanostructured, it is positioned on described side, wherein this solar chip body have between
Thickness between 50 μm to 120 μm, and this layer of nanostructured have between 2 μm to 8 μm
The degree of depth.
The flexible sun of thickness and energy conversion efficiency can be optimized the most according to claim 1
Energy chip, wherein, this solar chip body uses an amorphous phase base material.
The flexible sun of thickness and energy conversion efficiency can be optimized the most according to claim 1
Energy chip, wherein, this solar chip body uses monocrystalline phase base material or a crystalline phase base material more than.
The flexible sun of thickness and energy conversion efficiency can be optimized the most according to claim 1
Can chip, wherein, this solar chip body use material be by glass, silicon, germanium, carbon, aluminum,
Gallium nitride, GaAs, gallium phosphide, aluminium nitride, sapphire, spinelle, aluminium oxide, carborundum,
A kind of material selected by group that zinc oxide, magnesium oxide, aluminium oxide lithium and gallium oxide lithium are formed.
The flexible sun of thickness and energy conversion efficiency can be optimized the most according to claim 1
Energy chip, wherein, described nanostructured is to be formed by an electrochemical etching process.
The flexible sun of thickness and energy conversion efficiency can be optimized the most according to claim 1
Energy chip, wherein, described nanostructured is to be formed by a depositing operation.
7. can optimize a flexible solar chip for thickness and energy conversion efficiency, it has:
One solar chip body, it has an end face, a bottom surface and four sides；And
One layer of nanostructured, it is to be positioned on described side, and wherein this solar chip body has Jie
Thickness between 120 μm to 140 μm, and this layer of nanostructured have between 2 μm to 8 μm it
Between the degree of depth.
8. can optimize a flexible solar chip for thickness and energy conversion efficiency, it has:
One solar chip body, it has an end face, a bottom surface and four sides；And
One layer of nanostructured, it is to be positioned on described side, and wherein this solar chip body has Jie
Thickness between 140 μm to 160 μm, and this layer of nanostructured have between 2 μm to 8 μm it
Between the degree of depth.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510018011.7A CN105845757A (en) | 2015-01-14 | 2015-01-14 | Bendable solar chip capable of optimizing thickness and conversion efficiency |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510018011.7A CN105845757A (en) | 2015-01-14 | 2015-01-14 | Bendable solar chip capable of optimizing thickness and conversion efficiency |
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| Publication Number | Publication Date |
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| CN105845757A true CN105845757A (en) | 2016-08-10 |
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| CN201510018011.7A Pending CN105845757A (en) | 2015-01-14 | 2015-01-14 | Bendable solar chip capable of optimizing thickness and conversion efficiency |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080176290A1 (en) * | 2007-01-22 | 2008-07-24 | Victor Joseph | Apparatus for high throughput chemical reactions |
| CN103021830A (en) * | 2011-09-21 | 2013-04-03 | 昆山中辰矽晶有限公司 | Wafer processing method |
| CN103011066A (en) * | 2011-09-21 | 2013-04-03 | 叶哲良 | Chip |
-
2015
- 2015-01-14 CN CN201510018011.7A patent/CN105845757A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080176290A1 (en) * | 2007-01-22 | 2008-07-24 | Victor Joseph | Apparatus for high throughput chemical reactions |
| CN103021830A (en) * | 2011-09-21 | 2013-04-03 | 昆山中辰矽晶有限公司 | Wafer processing method |
| CN103011066A (en) * | 2011-09-21 | 2013-04-03 | 叶哲良 | Chip |
Non-Patent Citations (1)
| Title |
|---|
| 刘家敬等: "超薄晶体硅天阳能电池关键工艺及产业化研究", 《第12届中国光伏打会暨国际光伏展览会论文》 * |
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Application publication date: 20160810 |
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