CN105845699B - To reduce the negatively charged layer of iconic memory effect - Google Patents
To reduce the negatively charged layer of iconic memory effect Download PDFInfo
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- CN105845699B CN105845699B CN201610319934.0A CN201610319934A CN105845699B CN 105845699 B CN105845699 B CN 105845699B CN 201610319934 A CN201610319934 A CN 201610319934A CN 105845699 B CN105845699 B CN 105845699B
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN homojunction type
Abstract
The present invention relates to reducing the negatively charged layer of iconic memory effect.A kind of image sensor pixel includes the photodiode region with the first polarity doping type being placed in semiconductor layer.Pinned surface layer with the second polarity doping type is placed in above the photodiode region in the semiconductor layer.Second polarity is opposite with first polarity.First polarity charge layer is disposed close to the pinned surface layer above the photodiode region.Contact etch-stop layer is placed in close to the first polarity charge layer above the photodiode region.The first polarity charge layer is placed between the pinned surface layer and the contact etch-stop layer so that the counteracting of the first polarity charge layer incuded in the contact etch-stop layer has the second polar charge.Passivation layer is also placed in above the photodiode region between the pinned surface layer and the contact etch-stop layer.
Description
The relevant information of divisional application
This case is divisional application.The female case of the division be the applying date be August in 2013 7, application No. is
The invention patent application case of 201310340938.3, entitled " to reduce the negatively charged layer of iconic memory effect ".
Technical field
The present invention relates generally to imagings.More specifically, example of the invention is related to being based on complementary metal oxide
The imaging sensor of semiconductor.
Background technology
The electricity for falling on the image with high brightness levels on complementary metal oxide semiconductor (CMOS) imaging sensor is special
Sign can keep being embedded in the electrical feature of the image then obtained then read.Keep previously being felt in the image sensor
The electrical feature of the image of survey has been referred to as " ghost image illusion " or " memory effect ".This undesirable effect can be because of still image, outstanding
It is that high intensity image or bright image aggravate to the repeated exposure of imaging sensor.The reservation expression of ghost image makes then to obtain
The image taken is fuzzy and reduces signal-to-noise ratio and may lead to fuzzy noise in the case where there is the movement being just imaged.
It has been found that using advanced manufacturing technology, particularly using make the maximized measure of metal interconnecting piece density that
It is particularly present memory effect problem in the cmos image sensor that a little technologies make.For instance, it has been found that using so-called " non-boundary
Those of contact " manufacturing technology is associated with the basic reason of this problem.
Invention content
One embodiment of the present of invention provides a kind of image sensor pixel comprising：Photodiode region has the
One polarity doping type, is placed in semiconductor layer；Pinned surface layer has the second polarity doping type, is placed in
Above the photodiode region in the semiconductor layer, wherein second polarity is opposite with first polarity；First
Polarity charge layer, close to the photodiode region above the pinned surface layer and dispose；Contact etch-stop layer,
It is placed in above the photodiode region close to the first polarity charge layer, wherein the first polarity charge layer disposes
Between the pinned surface layer and the contact etch-stop layer so that the first polarity charge layer is offset in the contact etch
What is incuded in stop-layer has the second polar charge；And passivation layer, it is placed in above the photodiode region described
Between pinned surface layer and the contact etch-stop layer.
One embodiment of the present of invention provides a kind of equipment comprising：Pel array is arranged in semiconductor layer,
Described in each of the pixel of pel array include：Photodiode region has the first polarity doping type,
It is placed in the semiconductor layer；And pinned surface layer, there is the second polarity doping type, be placed in the semiconductor layer
In the photodiode region above, wherein second polarity is opposite with first polarity；First polarity charge layer,
The pinned surface layer of each of the pixel close to the pel array and be placed in above the pel array；
Contact etch-stop layer is placed in above the pel array close to the first polarity charge layer, wherein described first
Polarity charge layer is placed in the pinned surface layer of each of described pixel of the pel array and the contact is lost
It carves between stop-layer so that it is second polar that the first polarity charge layer offsets having of incuding in the contact etch-stop layer
Charge；And passivation layer, it is placed in the institute in each of the pixel of the pel array above the pel array
It states between pinned surface layer and the contact etch-stop layer.
One embodiment of the present of invention provides a kind of imaging system comprising：Pel array is arranged in semiconductor layer
In, wherein each of the pixel of the pel array includes：There is the first polarity to adulterate class for photodiode region
Type is placed in the semiconductor layer；Pinned surface layer has the second polarity doping type, is placed in and described partly leads
Above the photodiode region in body layer, wherein second polarity is opposite with first polarity；First polarity charge
Layer, close to the photodiode region above the pinned surface layer and dispose；Contact etch-stop layer, described in
First polarity charge layer and be placed in above the pel array, wherein the first polarity charge layer is placed in the pinning table
Between face layer and the contact etch-stop layer so that the counteracting of the first polarity charge layer incudes in the contact etch-stop layer
Have the second polar charge；And passivation layer, it is placed in the picture in the pel array above the pel array
Between the pinned surface layer and the contact etch-stop layer of each of element；Control circuit is coupled to the picture
Pixel array is to control the operation of the pel array；And reading circuit, it is coupled to the pel array with from the pixel battle array
Row read image data.
Description of the drawings
The non-limiting and non-exhaustive embodiments for referring to the following figures the description present invention, wherein similar in all views
Ref. No. refers to similar component, unless otherwise prescribed.
Fig. 1 is the example that teaching according to the present invention illustrates the imaging system comprising example image sensor
Diagram.
Fig. 2 teachings according to the present invention illustrate the vertical view of an example of example pixel array.
Fig. 3 A illustrate the imaging sensor being placed in the semiconductor layer without negatively charged layer for using up irradiation
The cross-sectional view of one example of pixel.
Fig. 3 B illustrate the negatively charged layer that do not have being placed in after having used up irradiation in light conditions
The cross-sectional view of one example of the image sensor pixel in semiconductor layer.
Fig. 4 A teaching diagram illustratings according to the present invention are contained in an example of the imaging sensor for using up irradiation
The cross-sectional view of one example of the image sensor pixel with negatively charged layer.
Fig. 4 B teaching diagram illustratings according to the present invention are contained in an example of the imaging sensor for using up irradiation
The cross-sectional view of another example of image sensor pixel with negatively charged layer.
Fig. 4 C teaching diagram illustratings according to the present invention are contained in an example of the imaging sensor for using up irradiation
The cross-sectional view of the yet another embodiment of image sensor pixel with negatively charged layer.
Fig. 4 D teachings according to the present invention illustrate the figure being contained in after having used up irradiation in light conditions
As sensor an example in the image sensor pixel with negatively charged layer an example cross-sectional view.
The example for the original image that Fig. 5 A displayings are obtained by imaging system.
The example for the image that Fig. 5 B shows are obtained by the imaging system without negatively charged layer, displaying memory effect
Symptom.
The example for the image that Fig. 5 C teaching displayings according to the present invention are obtained by the imaging system comprising negatively charged layer.
In all several views of schema, the corresponding corresponding component of reference character instruction.Those skilled in the art will
Understand, the element in figure is to be illustrated for the sake of simple and is clear, and be not necessarily drawn to scale.For example, it is
Help to improve the understanding to various embodiments of the present invention, the sizes of some elements in element in figure may be relative to
Other element amplifications.In addition, not describing usually useful or required common and well-known in commercially viable embodiment
Element so as to promote to the present invention this various embodiment more unobstructed observation.
Specific implementation mode
In the following description, numerous specific details be set forth to provide a thorough understanding of embodiments.However, fields
Technical staff will become apparent from, put into practice the present invention without the specific detail.In other examples, to avoid making the present invention
It is fuzzy, well-known material or method are not described in detail.
" one embodiment ", " embodiment ", " example " or " example " is referred to throughout this manual
Mean that a particular feature, structure, or characteristic in conjunction with described in the embodiment or example is contained at least one implementation of the present invention
In example.Therefore, each local the phrase " in one embodiment ", " in one embodiment ", " a reality throughout this manual
Example " or the appearance of " example " are not necessarily all referring to the same embodiment or example.In addition, a particular feature, structure, or characteristic
It can be combined in one or more embodiments or example with any suitable combination and/or sub-portfolio.Special characteristic, structure
Or characteristic may be included in integrated circuit, electronic circuit, combinational logic circuit or offer and want in functional other suitable components.
Additionally it should be appreciated that with figure provided herein be for the purpose and schema explained to those skilled in the art may not by than
Example is drawn.
The memory in complementary metal oxide semiconductor (CMOS) imaging sensor is solved according to the example of teachings of this disclosure
Factor and offer is facilitated to reduce or eliminate the cmos image sensing comprising contact etch-stop layer in the basic reason of effect
The solution of memory effect in device.Stopped comprising contact etch according to the example cmos image sensor of teachings of this disclosure
Layer makes the non-boundary contact element in reduction or without memory effect cmos image sensor becomes can
Energy.Following article will be discussed in more detail, teaching according to the present invention, in the contact etch-stop layer and light of cmos image sensor
Extra band charge layer is formed between the pinning layer of electric diode.For example, teaching according to the present invention is added in an example
Add the negative electrical charge of charge layer that will be sequestered in the contact etch-stop layer of imaging sensor to underlie on photodiode to incude
The undesirable effect of positive charge, this reduces the ghost image illusion or memory effect in imaging sensor.
Fig. 1 is the reality that teaching according to the present invention illustrates the imaging system 100 comprising example pixel array 102
The diagram of example, pel array 102 include the additional charge layer formed close to contact etch-stop layer, the additional charge layer masking
The undesirable effect of the positive charge incuded in the contact etch-stop layer.It is shown, is imaged in example as depicted
System 100 includes to be coupled to the pel array 102 of control circuit 108 and be coupled to the reading circuit 104 of function logic 106.
In an example, pel array 102 is the two dimension of imaging sensor or pixel (for example, pixel P1, P2 ..., Pn)
(2D) array.In an example, each pixel is cmos imaging pixel.As illustrated, each pixel is arranged to one
To obtain the image data of people, place, object etc. in row (for example, row R1 to Ry) and a row (for example, row C1 to Cx), then may be used
Use the image of people, place, object etc. described in described image data reproduction.
In an example, after each pixel has obtained its image data or image charge, described image data by
Reading circuit 104 reads and is then transferred to function logic 106.In various examples, reading circuit 104 may include amplification electricity
Road, analog/digital (ADC) conversion circuit or other.Function logic 106 can only store described image data or even by scheming after application
As effect (for example, cut out, rotate, removes blood-shot eye illness, adjust brightness, adjust contrast or other) manipulates described image data.
In an example, reading circuit 104 can once read a line image data (illustrated) along alignment is read or can make
Image datas are read with a variety of other technologies (not illustrating), such as series read-out or read to full parellel all pictures simultaneously
Element.
In an example, control circuit 108 is coupled to pel array 102 to control the operating characteristic of pel array 102.
For example, control circuit 108 can generate the shutter signal for controlling image acquisition.In an example, the shutter letter
Number for for simultaneously enable all pixels in pel array 102 with individually obtain window during and meanwhile capture its respective image number
According to global shutter signal.In another example, shutter signal is rolling shutter signal so that during continuously acquiring window sequentially
Enable each pixel column, each pixel column or each pixel group.
Fig. 2 teachings according to the present invention illustrate an example of the semiconductor substrate 210 of example pixel array 202
Vertical view.It will be appreciated that in an example, pel array 202 is the increased details for the example pixel array 102 for providing Fig. 1
Diagram.Shown in example as depicted in Figure 2, pel array 202 comprising be wherein disposed with pixel (for example, P1, P2,
P3, P4, P5, P6, P7, P8, P9 ...) semiconductor layer 210 of array.As shown in the example, each pixel (such as Fig. 2
In illustrated example pixel P5) include the photodiode 212 being arranged in pel array 202 in semiconductor layer 210
And it is coupled to the associated pixel circuit 214 of photodiode 212.In an example, pixel circuit 214 may include pixel
Circuit element, such as, but not limited to transfer transistor and floating diffusion portion.In an example, one or more pixels are also
It may include or share charge-voltage conversion floating diode and amplifier transistor.
It discusses in detail as discussed further below, in an example, forms electrically charged layer also above pel array 202
And contact etch-stop layer.In an example, the electrically charged layer is the nail for the photodiode for being formed in each pixel
Prick the negatively charged layer above superficial layer.The making for being deposited as to utilize when providing non-boundary contact of contact etch-stop layer
Technology, the non-boundary contact can be used for increasing the metal interconnecting piece density in pel array 202.In an example, according to
Teachings of the present invention, the negative electrical charge counteracting being contained in negatively charged layer can be in contact etch-stop layer due to strong illumination
The effect of the positive charge of induction, this reduces the ghost image illusion or memory effect in pel array 202.
In order to illustrate, Fig. 3 A teaching displayings according to the present invention are contained in the cmos image without electrically charged layer and pass
The cross-sectional view of example semiconductor layer 310 in the example pixel array 302 of sensor.Note that in an example, pel array
302 correspond to the cross-sectional view along line A-A' of the pel array 202 of Fig. 2.It is shown in example as depicted, pixel battle array
Row 302 include the semiconductor layer 310 for being wherein disposed with multiple photodiode regions 312, in an example, semiconductor layer 310
Including P-type silicon.In the illustration being described, each of multiple photodiode regions 312 are contained in the independent picture of pel array 302
In element.In an example, each photodiode region 312 includes the N doped regions being formed in the P-type silicon of semiconductor layer 310.
It is shown in example as depicted, there are the shallow trench isolations in the adjacent photodiode area 312 in separate semiconductor layer 310
(STI) 318th area and therefore it defines the boundary between the pixel of pel array 302.
Illustrated example is also showed that in the presence of the pinning table being placed at the surface of photodiode region 312 in Fig. 3 A
Face layer 313.In an example, pinned surface layer 313 includes that the P of covering photosensitive regions of pixels adulterates pinned region, is extended to
318 insulation boundaries of STI and overlie N doping photodiode region 312 on, as shown in the figure.Fig. 3 A are also according to teachings of the present invention
Displaying passivation layer 320 is deposited on the pinned surface layer of each pixel in the semiconductor layer 310 for being arranged in example pixel array 302
313 tops.In an example, passivation layer 320 may include insulating materials, such as the dielectric layer etc. based on silica.
Illustrated example illustrates contact etch-stop layer 322 also according to teachings of the present invention and deposits in Fig. 3 A
Above passivation layer 320, passivation layer 320 is deposited on 313 top of pinned surface layer being contained in example pixel array 302, such as
Shown in figure.In an example, contact etch-stop layer 322 will be used to help provide to stay in pel array 302 and make
The contact etch-stop layer of non-boundary contact.In this way, contact etch-stop layer 322 will be used to open will be used to form contact later
Protect the structure that underlies without damage during the dry etch process of mouth.Therefore, contact etch-stop layer 322 has than (for example)
The slow etch-rate of dielectric layer based on silica.
In an example, contact etch-stop layer 322 may include the dielectric based on silicon nitride, for example, include
Silicon oxynitride, silicon carbide etc..In an example, plasma reinforced chemical vapour deposition (PECVD) can be used to carry out deposited contact
Etching stopping layer 322, this deposition decompose such as silane (SiH using electrically driven (operated) plasma4), ammonia (NH4) and oxygen (O2)
Etc. source gases form the silicon nitride and/or silicon oxynitride of contact etch-stop layer 322 to provide silicon, nitrogen and oxygen source.
In an example, therefore, the feature of gained contact etch-stop layer 322 can be to include the mobile electricity of significant quantity
Lotus, this is because the crystallization bond of the residual hydrogen or bad formation between atom, such as Si-Si bond or Si -- H bond.In a reality
Example in, gained contact etch-stop layer 322 be further characterized in that with selected by selected deposition process parameters or reaction gas
The associated residual mechanical stresses of relative populations.
Dislocation charge in the PECVD silicon nitrides and/or silicon oxynitride of contact etch-stop layer 322 can by electric power (for example,
The electric field placed across contact etch-stop layer 322) it is mobile, this can lead to semiconductor region (such as photodiode region 312 nearby
And/or be contained in the pixel circuit in the pixel of pel array 302) in undesirable effect.For example, contact etch stops
Only the dislocation charge in the overlying PECVD silicon nitrides of layer 322 can be underlied by change be lightly doped source electrode or drain region exhaust spy
Property and influence to be contained in the source electrode of transistor included in the pixel circuit in the pixel of pel array 302 to drain resistance.
Additionally, it is noted that the PECVD silicon nitrides and/or silicon oxynitride of contact etch-stop layer 322 and other films such as silicon dioxide film
Between interface can charge usually be kept with scission of link between the various atoms of the interface.
Furthermore, it is noted that can be used by the visible light of contact etch-stop layer 322, especially in imaging because being exposed to
In the PECVD silicon nitrides and/or nitrogen of contact etch-stop layer 322 when the photodiode region 312 of bright light exposure pel array 302
Net positive charge is directly induced in silica.In particular, energy associated with the phonon modes of Si-Si and Si-H crystal structures
Amount may participate in the optical excitation of electric carrier.Therefore, photodiode region 312 (for example) is being overlie under strong illumination
On contact etch-stop layer 322 SiON films in generate positive charge lead to memory effect.
In order to illustrate, the light 315 of Fig. 3 A displaying irradiations photodiode region 312, therefore it irradiates and passes through contact
Etching stopping layer 322, as shown in the figure.This can occur in the positive capture images in photodiode region.Due to this carried out with light 315
Irradiation, the induced positive 317 in contact etch-stop layer 322 incude electronics at the surface of photodiode region 312
319, as shown in the figure.
Fig. 3 B shows no longer there is light 315 and photodiode region 312 with light 315 irradiate after and catching
Obtain make dark Scenery Imaging after image or in light conditions after, being incuded at the surface of photodiode region 312
Electronics 319 is injected into photodiode region 312, so as to cause undesirable memory effect.In other words, when including photoelectricity
When the pixel of diode region 312 makes dark Scenery Imaging, at the surface of photodiode region 312 as the image previously captured
The incuded electronics 319 of result be injected into photodiode region 312, this generates localization dark current, to cause elder generation
Undesirable " ghost image " of the image of preceding capture is apparent in as memory effect in pel array 302.
Related with memory effect in order to solve the problems, such as, Fig. 4 A teaching displayings according to the present invention are contained in cmos image biography
The cross-sectional view of example semiconductor layer 410 in the example pixel array 402 of sensor.Note that in an example, pel array
402 correspond to the cross-sectional view along line A-A' of the pel array 202 of Fig. 2.In the illustrated example, for explanation
Purpose and pel array 402 is shown as frontside illuminated formula pel array.In another example, it should be understood that according to the present invention
Teaching, pel array 402 can be configured to backside illuminated formula pel array.Note that the pel array 402 of Fig. 4 A and Fig. 3 A and 3B
Pel array 302 shares some similitudes.For example, being shown in example as depicted in fig. 4a, pel array 402 includes it
In be disposed with the semiconductor layers 410 of multiple photodiode regions 412, include that semiconductor layer 410 includes P-type silicon in an example.
In the illustration being described, each of multiple photodiode regions 412 are contained in the independent pixel of pel array 402.One
In a example, each photodiode region 412 includes the N doped regions being formed in the P-type silicon of semiconductor layer 410.As depicted
Example in shown, there are 418th areas STI in the adjacent photodiode area 412 in separate semiconductor layer 410 and therefore its
Define the boundary between the pixel of pel array 402.Pinned surface layer 413 is placed at the surface of photodiode region 412.?
In one example, pinned surface layer 413 includes that the P of covering photosensitive regions of pixels adulterates pinned region, extends to the insulation of STI 418
Boundary and overlie N doping photodiode region 412 on, as shown in the figure.
Teaching according to the present invention, a difference between the pel array 402 and the pel array 302 of Fig. 3 A and 3B of Fig. 4 A
Different to be, the pel array 402 of Fig. 4 A includes the electrically charged layer 421 disposed close to pinned surface layer 413, as shown in the figure.At one
In example, electrically charged layer 421 is negatively charged layer and therefore includes fixed negative charge 423, as shown in the figure.In various examples,
Electrically charged layer 421 can be by hafnium oxide (HfOx), aluminium oxide (Al2O3), zirconium oxide (ZrO2), tantalum oxide (Ta2O5) and/or titanium oxide
(TiO2) constitute.It, can be by chemical vapor deposition (CVD), sputter and/or atomic layer deposition (ALD) come shape in various examples
At electrically charged layer 421.Note that ALD provides good film quality and reduces interface state.
Discribed example teaching according to the present invention shows contact etch-stop layer 422 close to electrically charged layer in Fig. 4 A
421 and be placed in the top of photodiode region 412, as shown in the figure.In addition, Fig. 4 A show passivation layer 420 also in photodiode
Between 412 top pinned surface layer 413 of area and contact etch-stop layer 422, as shown in the figure.In an example, contact etch
Stop-layer 422 may include the dielectric based on silicon nitride, for example, include silicon oxynitride, silicon carbide etc..In an example
In, passivation layer 420 may include insulating materials, such as the dielectric layer etc. based on silica.Illustrated spy in Figure 4 A
Determine in example, passivation layer 420 be placed in 412 upper belt charge layer 421 of photodiode region and contact etch-stop layer 420 it
Between, as shown in the figure.
In the illustrated example, Fig. 4 A teaching displaying metal interconnecting layers 424 according to the present invention are then placed in
422 top of contact etch-stop layer.In an example, metal interconnecting layer 424 is the metal for including multiple metal interconnecting pieces 426
Stack layer, metal interconnecting piece 426 provide the electrical connection to the pixel circuit in pel array 402.In an example, according to this
The teaching of invention, metal interconnecting piece 426 include one or more non-boundary contacts.In another example, according to the present invention
Teaching, any one of metal interconnecting piece 426 be non-boundary contact.
Fig. 4 B teaching diagram illustratings according to the present invention are contained in an example of the imaging sensor for using up irradiation
The cross-sectional view of another example of image sensor pixel with negatively charged layer.It will be appreciated that the example shown in Fig. 4 B
The example cross-sectional view of the example image sensor pixel shown in cross-sectional view and Fig. 4 A shares many similitudes.For example,
In the example cross-sectional view of image sensor pixel in figure 4b, both electrically charged layer 421 and passivation layer 420 are placed in photoelectricity
412 top of diode region is between pinned surface layer 413 and contact etch-stop layer 422.However, a difference is, in Fig. 4 B
In in illustrated particular instance, passivation layer 420 be placed in 412 top of photodiode region pinned surface layer 413 with
Between electrically charged layer 421, as shown in the figure.
Fig. 4 C teaching diagram illustratings according to the present invention are contained in an example of the imaging sensor for using up irradiation
The cross-sectional view of the yet another embodiment of image sensor pixel with negatively charged layer.It will be appreciated that the example shown in Fig. 4 C
The reality shown in the example cross-sectional view and Fig. 4 B of the example image sensor pixel shown in cross-sectional view and Fig. 4 A
Example also shares many similitudes.For example, in the example cross-sectional view of image sensor pixel in figure 4 c, electrically charged layer 421
412 top of photodiode region is placed between pinned surface layer 413 and contact etch-stop layer 422.However, a difference
For, in figure 4 c in illustrated example, exist be placed in 412 top of photodiode region pinned surface layer 413 with
At least two passivation layers between contact etch-stop layer 422.For example, in figure 4 c in illustrated particular instance, one
A passivation layer 420B is placed in 412 top of photodiode region between pinned surface layer 413 and electrically charged layer 421, as schemed institute
Show.In addition, another passivation 420A is placed in 412 top of photodiode region in electrically charged layer 421 and contact etch-stop layer
Between 422, as shown in the figure.
In all examples illustrated in Fig. 4 A, Fig. 4 B and/or Fig. 4 C, light 415 passes through contact etch-stop layer 422
Photodiode region 412 is irradiated, this occurs in 402 capture images of pel array.However, in such as Fig. 4 A, Fig. 4 B and/or Fig. 4 C
Between middle shown contact etch-stop layer 422 and pinned surface layer 413 there are electrically charged layer 421 in the case of, electrically charged layer
Fixed negative charge 423 in 421 offsets the positive charge 417 incuded in contact etch-stop layer 422 in response to light 415.It changes
Sentence is talked about, teaching according to the present invention, and the fixed negative charge 423 in electrically charged layer 421 prevents in contact etch-stop layer 422
Institute's induced positive 417 incudes negative electrical charge in photodiode region 412.In addition, teaching according to the present invention, electrically charged layer
Fixed negative charge 423 in 421 helps to maintain the presence of positive charge 425 or can even be accumulated in the hole of pinned surface layer 413
Incude extra holes in tired layer.
In order to illustrate, Fig. 4 D teachings according to the present invention, which are illustrated in no longer, has light 415 and photodiode region 412
After being irradiated with light 415 and after capture images make dark Scenery Imaging or in light conditions after figure
The example cross-sectional view shown in 4A, the positive charge 417 previously incuded in contact etch-stop layer 422 is due to electrically charged layer
There are fixed negative charges 423 without incuding negative electrical charge in photodiode region 412 in 421.In addition, as depicted in fig. 4b
It is shown in example, teaching according to the present invention, maintains the positive charge 425 in the hole accumulation layer of pinned surface layer 413.Cause
This, there is the contact etch-stop layer 422 being formed in imaging sensor 402 and pinning layer 420 in teaching according to the present invention
Between electrically charged layer 421 in the case of, generally eliminate memory effect.
Fig. 5 A to 5C are that teaching according to the present invention helps to illustrate memory effect in pel array and comprising electrification
The example image of the reduction of memory effect in the pel array of lotus layer.In particular, Fig. 5 A displayings are obtained by imaging system
The example of original image 530.It the example of image 535 of Fig. 5 B shows from the imaging system without electrically charged layer and therefore opens up
Show the symptom of memory effect.Fig. 5 C teaching displayings according to the present invention include the image 540 in the imaging system of electrically charged layer
Example.As shown in Fig. 5 C, memory effect is not present in the image 540 according to teachings of this disclosure.
Including the above description of the illustrated example of the present invention of content described in abstract of invention is not intended to be
It is exhaustive or be limited to revealed precise forms.Although the specific reality of the present invention is described herein for illustrative purpose
Example and example are applied, but various equivalent modifications can be made without departing substantially from the relatively broader spirit and range of the present invention.It is practical
On, it should be understood that particular instance voltage, electric current, frequency, power range values, time etc. provide for task of explanation, and also
Can according in the other embodiments of teachings of this disclosure and example use other values.
Claims (7)
1. a kind of image sensor pixel comprising：
Photodiode region has the first polarity doping type, is placed in semiconductor layer；
Pinned surface layer has the second polarity doping type, the photodiode being placed in the semiconductor layer
Above area, wherein second polarity is opposite with first polarity；
First polarity charge layer, close to the photodiode region above the pinned surface layer and dispose；
Contact etch-stop layer is placed in close to the first polarity charge layer above the photodiode region, wherein
The first polarity charge layer is placed between the pinned surface layer and the contact etch-stop layer so that the first polarity electricity
What lotus layer counteracting incuded in the contact etch-stop layer has the second polar charge；
Stacked laminations of metal, it includes multiple metal interconnecting pieces, the multiple metal interconnecting piece is directly placed in the contact etch
To provide electrical connection on stop-layer, wherein the contact etch-stop layer is felt in response to the light across the stacked laminations of metal
There should be the described second polar charge；And
Passivation layer, be placed in above the photodiode region the pinned surface layer and the contact etch-stop layer it
Between, wherein the passivation layer includes insulating materials, wherein the passivation layer includes being placed in above the photodiode region
Multiple passivation layers, wherein the one in the multiple passivation layer is placed in the pinned surface layer and first polarity charge
The two between layer, and in wherein the multiple passivation layer is placed in the first polarity charge layer and stops with the contact etch
Only between layer.
2. image sensor pixel according to claim 1, wherein the contact etch-stop layer includes silicon nitride and nitrogen
One of silica.
3. image sensor pixel according to claim 1, wherein the first polarity charge layer includes hafnium oxide, oxidation
One of aluminium, zirconium oxide, tantalum oxide and titanium oxide.
4. image sensor pixel according to claim 1 loses wherein being placed in the pinned surface layer with the contact
That carves that the first polarity charge layer between stop-layer prevents from incuding in the contact etch-stop layer has described second
The polar charge incudes in the photodiode region has the first polar charge.
5. image sensor pixel according to claim 1, wherein the passivation layer includes silica.
6. image sensor pixel according to claim 1, wherein first polarity is negative, and second polarity
It is positive.
7. image sensor pixel according to claim 1, wherein the semiconductor layer includes silicon.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
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| US13/660,774 | 2012-10-25 | ||
| US13/660,774 US8816462B2 (en) | 2012-10-25 | 2012-10-25 | Negatively charged layer to reduce image memory effect |
| CN201310340938.3A CN103779366B (en) | 2012-10-25 | 2013-08-07 | In order to reduce the electronegative layer of iconic memory effect |
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| CN201610318158.2A Active CN105932033B (en) | 2012-10-25 | 2013-08-07 | To reduce the negatively charged layer of iconic memory effect |
| CN201310340938.3A Active CN103779366B (en) | 2012-10-25 | 2013-08-07 | In order to reduce the electronegative layer of iconic memory effect |
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| US8816462B2 (en) * | 2012-10-25 | 2014-08-26 | Omnivision Technologies, Inc. | Negatively charged layer to reduce image memory effect |
| US9224881B2 (en) * | 2013-04-04 | 2015-12-29 | Omnivision Technologies, Inc. | Layers for increasing performance in image sensors |
| TWI709235B (en) * | 2013-11-29 | 2020-11-01 | 日商索尼半導體解決方案公司 | Solid-state imaging element, its manufacturing method and electronic equipment |
| JP2016100347A (en) * | 2014-11-18 | 2016-05-30 | ソニー株式会社 | Solid-state imaging device, method of manufacturing the same, and electronic apparatus |
| WO2017047422A1 (en) * | 2015-09-17 | 2017-03-23 | ソニーセミコンダクタソリューションズ株式会社 | Solid-state imaging element, electronic device and method for manufacturing solid-state imaging element |
| JP2017139286A (en) * | 2016-02-02 | 2017-08-10 | ソニー株式会社 | Imaging element and camera system |
| CN107994044A (en) * | 2017-12-15 | 2018-05-04 | 上海华力微电子有限公司 | Cmos image sensor and preparation method thereof |
| CN108428712A (en) * | 2018-05-14 | 2018-08-21 | 德淮半导体有限公司 | Imaging sensor and its manufacturing method |
| CN110473888A (en) * | 2019-08-26 | 2019-11-19 | 上海华力集成电路制造有限公司 | The forming method and aluminum oxide film of aluminum oxide film in BSI structure image sensor |
| CN110444556B (en) * | 2019-08-30 | 2021-12-03 | 上海华力微电子有限公司 | CMOS sensor and method for forming CMOS sensor |
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| Publication number | Publication date |
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| CN105932033B (en) | 2018-02-16 |
| TW201417252A (en) | 2014-05-01 |
| US20140327102A1 (en) | 2014-11-06 |
| CN105845699A (en) | 2016-08-10 |
| US9147776B2 (en) | 2015-09-29 |
| TWI518888B (en) | 2016-01-21 |
| US20140117485A1 (en) | 2014-05-01 |
| CN105932033A (en) | 2016-09-07 |
| HK1194856A1 (en) | 2014-10-24 |
| US20140319639A1 (en) | 2014-10-30 |
| CN103779366A (en) | 2014-05-07 |
| CN103779366B (en) | 2016-05-18 |
| US8816462B2 (en) | 2014-08-26 |
| US9105767B2 (en) | 2015-08-11 |
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