CN105845436A - SrFeO2.5 magnetic thin film and preparation method therefor - Google Patents
SrFeO2.5 magnetic thin film and preparation method therefor Download PDFInfo
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- CN105845436A CN105845436A CN201610202051.1A CN201610202051A CN105845436A CN 105845436 A CN105845436 A CN 105845436A CN 201610202051 A CN201610202051 A CN 201610202051A CN 105845436 A CN105845436 A CN 105845436A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
- H01F41/24—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates from liquids
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- H—ELECTRICITY
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- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
- H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
- H01F10/18—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
- H01F41/22—Heat treatment; Thermal decomposition; Chemical vapour deposition
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Abstract
The invention provides an SrFeO2.5 magnetic thin film and a preparation method therefor. Sr(NO3)2 and Fe(NO3)3.H2O are dissolved into a mixed liquid of ethylene glycol and acetic anhydride to be stirred uniformly to obtain an SrFeO2.5 precursor liquid; and then the SrFeO2.5 magnetic thin film is prepared on a substrate through a spin-coating method and a layer-by-layer annealing process. The magnetic thin film is low in equipment requirement, the experimental conditions can be achieved easily, and the chemical components are accurate and controllable; the prepared SrFeO2.5 magnetic thin film is relatively high in uniformity, and has an orthorhombic structure; when the test frequency is 1kHz, the dielectric constant of the thin film is 425; when the electric filed is 100kV/cm, the leakage current density of the thin film is 1.07*10<-4>A/cm<2>; and at the room temperature, the saturation magnetization value of the thin film is 5.4emu/cm<3>, and the residual magnetization value is 0.45emu/cm<3>.
Description
Technical field
The invention belongs to field of functional materials, be specifically related to a kind of SrFeO2.5Thin magnetic film and preparation method thereof.
Background technology
Perovskite structure compound has much excellent physics, chemical property, and such as Quantum Transport, oxygen transports, make it
There is broader development prospect in the application such as spin electric device, oxygen fuel cell, therefore suffered from the extensive concern of people.It leads to
Formula is ABC3, A, B be usually metal cation, and C ion can be cation, it is also possible to for halogen ion.And must
Following condition must be met: (1) A ratio of ionic radii B ionic radius is big；(2) octahedral coordination is suitable to than ionic radius；(3)A、
The electricity price sum of B ion is equal to 3 times of C ion electricity price.
SrFeO3-δIt is a member in perovskite structure compound, owing to its oxygen content excursion is wide, makes it have four kinds of crystalline substances
Type, is cubic perovskite, four directions perovskite, orthogonal perovskite and brown capillose respectively.Meanwhile, oxygen content and Fe4+/Fe3+Ion
Ratio affect magnetic structure and the character of thin film the most to a great extent.Therefore, SrFeO3-δThin film can be as a kind of novel
Oxygen sensor material.
At present, the preparation method of strontium ferrite thin film mainly chemistry or laser deposition and pressed powder sintering process etc..Employing colloidal sol-
Gel method prepares SrFeO3-δThin film is a kind of more novel method, has the widest development prospect.
Summary of the invention
It is an object of the invention to provide a kind of SrFeO2.5Thin magnetic film and preparation method thereof, the method can prepare have orthogonal
Structure and certain ferromagnetic SrFeO2.5Thin film.
To achieve these goals, the present invention adopts the following technical scheme that
A kind of SrFeO2.5Thin magnetic film, the structural formula of this thin film is SrFeO2.5, this thin film belongs to ICMM space group, has
Orthohormbic structure, cell parameter a=5.5280, b=15.5579, c=5.4424.
Under 1kHz test frequency, the dielectric constant of this thin film is 425；Under 100kV/cm electric field, the leakage current of this thin film
Density is 1.07 × 10-4A/cm2；Under room temperature, the saturation magnetisation value of this thin film is 5.4emu/cm3, remanent magnetization value is 0.45
emu/cm3。
A kind of SrFeO2.5The preparation method of thin magnetic film, comprises the following steps:
Step 1: by Sr (NO3)2With Fe (NO3)3·H2O is dissolved in solvent for 1:1 in molar ratio, obtains SrFeO after stirring2.5
Precursor liquid；Wherein solvent is the mixture of ethylene glycol and acetic anhydride；
Step 2: use spin-coating method spin coating SrFeO on substrate2.5Precursor liquid, obtains SrFeO2.5Wet film, SrFeO2.5Wet film is through even
At 200～300 DEG C, toast to obtain dry film after glue, anneal in atmosphere at 580～620 DEG C, obtain crystalline state SrFeO2.5Thin film；
Step 3: treat crystalline state SrFeO2.5After film cooling, in crystalline state SrFeO2.5Step 2 is repeated, until it reaches required on thin film
Thickness, i.e. obtains SrFeO2.5Thin magnetic film.
In described solvent, the volume ratio of ethylene glycol and acetic anhydride is (2.5～3.5): 1, SrFeO2.5In precursor liquid, the concentration of Sr ion is
0.05～0.25mol/L.
Required time that stirs in described step 1 is 2～3h.
Substrate surface, before carrying out, is first cleaned up by described step 2, the most under ultraviolet light treatment with irradiation, makes substrate surface reach
To atomic cleanliness degree.
In described step 2, spin coating rotating speed during spin coating is 3500～4500r/min, and spin coating time is 10～15s.
In described step 2, the baking time after spin coating is 6～10min.
Annealing time in described step 2 is 20～40min.
Described SrFeO2.5Thin magnetic film is by 6～16 layer crystal states SrFeO2.5Thin film is constituted.
Relative to prior art, the method have the advantages that
1, the method being currently used for preparing thin film is a lot, such as chemical vapour deposition technique (CVD), magnetron sputtering method (rf magnetron
Sputtering), deposition of metal organic method (MOD), metal-organic chemical vapor deposition equipment method (MOCVD), liquid phase deposition
(LPD), molecular beam epitaxy (MBE), pulsed laser deposition (PLD) etc..Compare additive method, sol-gel process (Sol-Gel)
Having equipment requirements simple, experiment condition easily reaches, and reaction is easily carried out, and reaction temperature is relatively low, easily operates, suitably big
Preparing thin film on surface and surface in irregular shape, easily realize the Uniform Doped on molecular level, the uniformity of film of preparation is preferable,
And the advantage such as chemical constituent controllable precise.The present invention uses sol-gel process, because not having machine in sol-gel process preparation process
Tool mixes, and is not easily introduced impurity, and product purity is high, and stoichiometric proportion is easily controlled, and sintering temperature is low, and utilizes the method can
To realize the mixing of molecular level, therefore system uniformity is good, is more prone to prepare the SrFeO of excellent performance2.5Thin magnetic film.
The present invention uses sol-gal process, is first mixed in proportion strontium nitrate and ferric nitrate, is configured to SrFeO2.5Precursor liquid, then use spin coating
It is high that method and the technique successively annealed prepare consistency on substrate, the SrFeO of even grain size2.5Thin magnetic film, and prepare
SrFeO2.5Thin magnetic film is orthohormbic structure, and has certain magnetic.
2, the SrFeO that the present invention provides2.5Thin magnetic film surfacing, crystallite dimension is less, and this thin film belongs to ICMM spatial point
Group, has orthohormbic structure, its cell parameter a=5.5280, b=15.5579, c=5.4424, and this thin film has certain magnetic.
Further, the SrFeO that the present invention provides2.5Thin magnetic film, when testing frequency and being 1kHz, its dielectric constant is 425；
When testing electric field and being 100kV/cm, its leakage current density is 1.07 × 10-4A/cm2, under room temperature, its saturation magnetisation value is 5.4
emu/cm3, remanent magnetization value is 0.45emu/cm3。
Accompanying drawing explanation
Fig. 1 is SrFeO prepared by the present invention2.5The XRD refine figure of thin magnetic film；
Fig. 2 is SrFeO prepared by the present invention2.5The dielectric properties of thin magnetic film and the graph of a relation testing frequency；
Fig. 3 is SrFeO prepared by the present invention2.5The leakage current density of thin magnetic film；
Fig. 4 is SrFeO prepared by the present invention2.5The hysteresis curve of thin magnetic film.
Detailed description of the invention
Below in conjunction with the present invention preferably embodiment and accompanying drawing, the present invention is described in further details.
Embodiment 1
Step 1: by Sr (NO3)2With Fe (NO3)3·H2O is dissolved in for 1:1 in the mixed liquor of ethylene glycol and acetic anhydride in molar ratio,
Stirring 2.5h obtains the stable SrFeO that Sr ion concentration is 0.1mol/L2.5Front body liquid；Wherein ethylene glycol and the volume of acetic anhydride
Ratio is 3:1
Step 2: FTO/glass substrate is cut into the size needed for experiment, the most successively with liquid detergent, acetone, dehydrated alcohol
Ultrasonic vibration 10min cleans, the most ultrasonic after again with deionized water rinsing, finally seal up for safekeeping in dehydrated alcohol standby；To process
Good standby FTO/glass substrate uses N after being washed with deionized water only2Dry up, then irradiate clean FTO/glass with ultraviolet radiation instrument
Substrate 40min；Its surface is made to reach atomic cleanliness degree.Use spin-coating method spin coating SrFeO on FTO/glass substrate2.5Precursor liquid,
Preparation SrFeO2.5Wet film, to SrFeO2.5Wet film spin coating, spin coating rotating speed is 4000r/min, and spin coating time is 15s, and spin coating terminates
After, at a temperature of 250 DEG C, toast 8min obtain dry film, then the 30min that anneals layer by layer in air at a temperature of 600 DEG C, obtain crystalline state
SrFeO2.5Thin film；
Step 3, treats crystalline state SrFeO2.5After film cooling, in crystalline state SrFeO2.5Repeat step 2 on thin film, be repeated 10 times,
To SrFeO2.5Thin magnetic film.
Embodiment 2
Step 1: by Sr (NO3)2With Fe (NO3)3·H2O is dissolved in for 1:1 in the mixed liquor of ethylene glycol and acetic anhydride in molar ratio,
Stirring 2h obtains the stable SrFeO that Sr ion concentration is 0.15mol/L2.5Front body liquid；Wherein ethylene glycol and the volume of acetic anhydride
Ratio is 2.5:1
Step 2: FTO/glass substrate is cut into the size needed for experiment, the most successively with liquid detergent, acetone, dehydrated alcohol
Ultrasonic vibration 10min cleans, the most ultrasonic after again with deionized water rinsing, finally seal up for safekeeping in dehydrated alcohol standby；To process
Good standby FTO/glass substrate uses N after being washed with deionized water only2Dry up, then irradiate clean FTO/glass with ultraviolet radiation instrument
Substrate 40min；Its surface is made to reach atomic cleanliness degree.Use spin-coating method spin coating SrFeO on FTO/glass substrate2.5Precursor liquid,
Preparation SrFeO2.5Wet film, to SrFeO2.5Wet film spin coating, spin coating rotating speed is 3500r/min, and spin coating time is 14s, and spin coating terminates
After, at a temperature of 200 DEG C, toast 10min obtain dry film, then the 40min that anneals layer by layer in air at a temperature of 580 DEG C, obtain crystalline state
SrFeO2.5Thin film；
Step 3, treats crystalline state SrFeO2.5After film cooling, in crystalline state SrFeO2.5Repeat step 2 on thin film, be repeated 5 times,
To SrFeO2.5Thin magnetic film.
Embodiment 3
Step 1: by Sr (NO3)2With Fe (NO3)3·H2O is dissolved in for 1:1 in the mixed liquor of ethylene glycol and acetic anhydride in molar ratio,
Stirring 3h obtains the stable SrFeO that Sr ion concentration is 0.2mol/L2.5Front body liquid；Wherein ethylene glycol and the volume of acetic anhydride
Ratio is 3.5:1
Step 2: FTO/glass substrate is cut into the size needed for experiment, the most successively with liquid detergent, acetone, dehydrated alcohol
Ultrasonic vibration 10min cleans, the most ultrasonic after again with deionized water rinsing, finally seal up for safekeeping in dehydrated alcohol standby；To process
Good standby FTO/glass substrate uses N after being washed with deionized water only2Dry up, then irradiate clean FTO/glass with ultraviolet radiation instrument
Substrate 40min；Its surface is made to reach atomic cleanliness degree.Use spin-coating method spin coating SrFeO on FTO/glass substrate2.5Precursor liquid,
Preparation SrFeO2.5Wet film, to SrFeO2.5Wet film spin coating, spin coating rotating speed is 4500r/min, and spin coating time is 10s, and spin coating terminates
After, at a temperature of 300 DEG C, toast 6min obtain dry film, then the 20min that anneals layer by layer in air at a temperature of 620 DEG C, obtain crystalline state
SrFeO2.5Thin film；
Step 3, treats crystalline state SrFeO2.5After film cooling, in crystalline state SrFeO2.5Repeat step 2 on thin film, be repeated 15 times,
To SrFeO2.5Thin magnetic film.
Embodiment 4
Step 1: by Sr (NO3)2With Fe (NO3)3·H2O is dissolved in for 1:1 in the mixed liquor of ethylene glycol and acetic anhydride in molar ratio,
Stirring 2.2h obtains the stable SrFeO that Sr ion concentration is 0.05mol/L2.5Front body liquid；Wherein ethylene glycol and the body of acetic anhydride
Long-pending ratio is 2.8:1
Step 2: FTO/glass substrate is cut into the size needed for experiment, the most successively with liquid detergent, acetone, dehydrated alcohol
Ultrasonic vibration 10min cleans, the most ultrasonic after again with deionized water rinsing, finally seal up for safekeeping in dehydrated alcohol standby；To process
Good standby FTO/glass substrate uses N after being washed with deionized water only2Dry up, then irradiate clean FTO/glass with ultraviolet radiation instrument
Substrate 40min；Its surface is made to reach atomic cleanliness degree.Use spin-coating method spin coating SrFeO on FTO/glass substrate2.5Precursor liquid,
Preparation SrFeO2.5Wet film, to SrFeO2.5Wet film spin coating, spin coating rotating speed is 3800r/min, and spin coating time is 13s, and spin coating terminates
After, at a temperature of 220 DEG C, toast 9min obtain dry film, then the 35min that anneals layer by layer in air at a temperature of 590 DEG C, obtain crystalline state
SrFeO2.5Thin film；
Step 3, treats crystalline state SrFeO2.5After film cooling, in crystalline state SrFeO2.5Repeat step 2 on thin film, be repeated 8 times,
To SrFeO2.5Thin magnetic film.
Embodiment 5
Step 1: by Sr (NO3)2With Fe (NO3)3·H2O is dissolved in for 1:1 in the mixed liquor of ethylene glycol and acetic anhydride in molar ratio,
Stirring 2.8h obtains the stable SrFeO that Sr ion concentration is 0.25mol/L2.5Front body liquid；Wherein ethylene glycol and the body of acetic anhydride
Long-pending ratio is 3.2:1
Step 2: FTO/glass substrate is cut into the size needed for experiment, the most successively with liquid detergent, acetone, dehydrated alcohol
Ultrasonic vibration 10min cleans, the most ultrasonic after again with deionized water rinsing, finally seal up for safekeeping in dehydrated alcohol standby；To process
Good standby FTO/glass substrate uses N after being washed with deionized water only2Dry up, then irradiate clean FTO/glass with ultraviolet radiation instrument
Substrate 40min；Its surface is made to reach atomic cleanliness degree.Use spin-coating method spin coating SrFeO on FTO/glass substrate2.5Precursor liquid,
Preparation SrFeO2.5Wet film, to SrFeO2.5Wet film spin coating, spin coating rotating speed is 4200r/min, and spin coating time is 11s, and spin coating terminates
After, at a temperature of 280 DEG C, toast 7min obtain dry film, then the 25min that anneals layer by layer in air at a temperature of 610 DEG C, obtain crystalline state
SrFeO2.5Thin film；
Step 3, treats crystalline state SrFeO2.5After film cooling, in crystalline state SrFeO2.5Repeat step 2 on thin film, be repeated 12 times,
To SrFeO2.5Thin magnetic film.
Embodiment 6
Step 1: by Sr (NO3)2With Fe (NO3)3·H2O is dissolved in for 1:1 in the mixed liquor of ethylene glycol and acetic anhydride in molar ratio,
Stirring 2.5h obtains the stable SrFeO that Sr ion concentration is 0.18mol/L2.5Front body liquid；Wherein ethylene glycol and the body of acetic anhydride
Long-pending ratio is 3:1
Step 2: FTO/glass substrate is cut into the size needed for experiment, the most successively with liquid detergent, acetone, dehydrated alcohol
Ultrasonic vibration 10min cleans, the most ultrasonic after again with deionized water rinsing, finally seal up for safekeeping in dehydrated alcohol standby；To process
Good standby FTO/glass substrate uses N after being washed with deionized water only2Dry up, then irradiate clean FTO/glass with ultraviolet radiation instrument
Substrate 40min；Its surface is made to reach atomic cleanliness degree.Use spin-coating method spin coating SrFeO on FTO/glass substrate2.5Precursor liquid,
Preparation SrFeO2.5Wet film, to SrFeO2.5Wet film spin coating, spin coating rotating speed is 3900r/min, and spin coating time is 12s, and spin coating terminates
After, at a temperature of 260 DEG C, toast 7.5min obtain dry film, then the 28min that anneals layer by layer in air at a temperature of 605 DEG C, obtain crystalline state
SrFeO2.5Thin film；
Step 3, treats crystalline state SrFeO2.5After film cooling, in crystalline state SrFeO2.5Repeat step 2 on thin film, be repeated 14 times,
To SrFeO2.5Thin magnetic film.
Use XRD determining SrFeO2.5The thing phase composition structure of thin magnetic film, result is as it is shown in figure 1, find SrFeO by refine2.5
Thin magnetic film belongs to ICMM space group, has orthohormbic structure, its cell parameter a=5.5280, b=15.5579, c=5.4424.
SrFeO is measured with FE-SEM2.5The microscopic appearance interracial contact situation of thin film, finds SrFeO2.5Thin magnetic film surfacing,
Uniformly, interracial contact is all right for grain.SrFeO is tested with Agilent E4980A precision LCR table2.5The dielectricity of thin magnetic film
Can, result is as shown in Figure 2, it can be seen that under 1kHz test frequency, SrFeO2.5The dielectric constant of thin magnetic film is 425.
SrFeO is tested with Agilent B29002.5The leakage conductance current characteristics of thin magnetic film, result is as shown in Figure 3, it can be seen that 100
Under kV/cm electric field, SrFeO2.5The leakage current density of thin magnetic film is 1.07 × 10-4A/cm2.Survey with SQUID MPMS-XL-7
Examination SrFeO2.5Ferromagnetic property under thin magnetic film room temperature, result is as shown in Figure 4, it can be seen that SrFeO under room temperature2.5Thin magnetic film
Saturation magnetisation value be 5.4emu/cm3, remanent magnetization value is 0.45emu/cm3。
The invention provides a kind of SrFeO2.5The preparation method of thin magnetic film, is that 1:1 is by Sr (NO in molar ratio3)2、
Fe(NO3)3·H2O is dissolved in the mixed liquor of ethylene glycol and acetic anhydride (volume ratio is 3:1), and stirring 2～3h obtains Sr ion concentration
It is the stable SrFeO of 0.05～0.25mol/L2.5Front body liquid.Use spin-coating method and the technique successively annealed, in atom degree cleaning
The SrFeO of even grain size is prepared on FTO substrate2.5Thin magnetic film (5～15 layers).Present device requires simple, experiment condition
Easily reach, chemical constituent controllable precise, the SrFeO of preparation2.5Thin magnetic film uniformity is preferable, belongs to ICMM space group,
There is orthohormbic structure, there is relatively low leakage current density, higher dielectric constant and certain ferromagnetism simultaneously.
The foregoing is only one embodiment of the present invention, be not all of or unique embodiment, those of ordinary skill in the art
The conversion of any equivalence taked technical solution of the present invention by reading description of the invention, is the claim institute of the present invention
Contain.
Claims (10)
1. a SrFeO2.5Thin magnetic film, it is characterised in that: the structural formula of this thin film is SrFeO2.5, this thin film belongs to ICMM
Space group, has orthohormbic structure, cell parameter a=5.5280, b=15.5579, c=5.4424.
SrFeO the most according to claim 12.5Thin magnetic film, it is characterised in that: under 1kHz test frequency, this is thin
The dielectric constant of film is 425；Under 100kV/cm electric field, the leakage current density of this thin film is 1.07 × 10-4A/cm2；Under room temperature,
The saturation magnetisation value of this thin film is 5.4emu/cm3, remanent magnetization value is 0.45emu/cm3。
3. a SrFeO2.5The preparation method of thin magnetic film, it is characterised in that comprise the following steps:
Step 1: by Sr (NO3)2With Fe (NO3)3·H2O is dissolved in solvent for 1:1 in molar ratio, obtains SrFeO after stirring2.5
Precursor liquid；Wherein solvent is the mixture of ethylene glycol and acetic anhydride；
Step 2: use spin-coating method spin coating SrFeO on substrate2.5Precursor liquid, obtains SrFeO2.5Wet film, SrFeO2.5Wet film is through even
At 200～300 DEG C, toast to obtain dry film after glue, anneal in atmosphere at 580～620 DEG C, obtain crystalline state SrFeO2.5Thin film；
Step 3: treat crystalline state SrFeO2.5After film cooling, in crystalline state SrFeO2.5Step 2 is repeated, until it reaches required on thin film
Thickness, i.e. obtains SrFeO2.5Thin magnetic film.
SrFeO the most according to claim 32.5The preparation method of thin magnetic film, it is characterised in that: second two in described solvent
The volume ratio of alcohol and acetic anhydride is (2.5～3.5): 1, SrFeO2.5In precursor liquid, the concentration of Sr ion is 0.05～0.25mol/L.
SrFeO the most according to claim 32.5The preparation method of thin magnetic film, it is characterised in that: described step 1 is stirred
Time needed for mixing uniformly is 2～3h.
SrFeO the most according to claim 32.5The preparation method of thin magnetic film, it is characterised in that: described step 2 is being entered
Before row, first substrate surface is cleaned up, the most under ultraviolet light treatment with irradiation, make substrate surface reach atomic cleanliness degree.
SrFeO the most according to claim 32.5The preparation method of thin magnetic film, it is characterised in that: even in described step 2
Spin coating rotating speed during glue is 3500～4500r/min, and spin coating time is 10～15s.
SrFeO the most according to claim 32.5The preparation method of thin magnetic film, it is characterised in that: even in described step 2
Baking time after glue is 6～10min.
SrFeO the most according to claim 32.5The preparation method of thin magnetic film, it is characterised in that: in described step 2
Annealing time is 20～40min.
SrFeO the most according to claim 32.5The preparation method of thin magnetic film, it is characterised in that: described SrFeO2.5
Thin magnetic film is by 6～16 layer crystal states SrFeO2.5Thin film is constituted.
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|---|---|---|---|---|
| CN109273255A (en) * | 2018-09-18 | 2019-01-25 | 陕西科技大学 | A kind of LSMO film of high-ferromagnetic and preparation method thereof |
| CN109273255B (en) * | 2018-09-18 | 2021-04-23 | 陕西科技大学 | High-ferromagnetism LSMO thin film and preparation method thereof |
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