CN107082579A - A kind of HoSrMnZn is co-doped with many iron thin films of bismuth ferrite and preparation method thereof - Google Patents

A kind of HoSrMnZn is co-doped with many iron thin films of bismuth ferrite and preparation method thereof Download PDF

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CN107082579A
CN107082579A CN201710255983.7A CN201710255983A CN107082579A CN 107082579 A CN107082579 A CN 107082579A CN 201710255983 A CN201710255983 A CN 201710255983A CN 107082579 A CN107082579 A CN 107082579A
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hosrmnzn
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bismuth ferrite
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谈国强
郭美佑
杨玮
刘云
任慧君
夏傲
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Shaanxi University of Science and Technology
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Abstract

Many iron thin films of bismuth ferrite and preparation method thereof are co-doped with the invention provides a kind of HoSrMnZn, using bismuth nitrate, holmium nitrate, strontium nitrate, ferric nitrate, manganese acetate and zinc nitrate as raw material (bismuth nitrate excessive 5%), using ethylene glycol monomethyl ether and acetic anhydride as solvent, the technique annealed with spin-coating method and layer by layer is prepared for Bi0.89Ho0.08Sr0.03Fe0.97‑xMn0.03ZnxO3Many iron thin films, i.e. HoSrMnZn are co-doped with many iron thin films of bismuth ferrite.The present invention uses sol gel process, and use spin coating and layer by layer annealing method, equipment requirement is simple, experiment condition is easily achieved, suitably film is prepared on big surface and surface in irregular shape, and chemical constituent controllable precise, obtained HoSrMnZn be co-doped with many iron thin film uniformities of bismuth ferrite preferably, improve BiFeO3The multi-ferrum property of film.

Description

A kind of HoSrMnZn is co-doped with many iron thin films of bismuth ferrite and preparation method thereof
Technical field
The invention belongs to field of functional materials, the FTO/glass substrate surfaces being related in functionalization prepare HoSrMnZn and are total to Mix many iron thin films of bismuth ferrite, specially Bi0.89Ho0.08Sr0.03Fe0.97-xMn0.03ZnxO3Many iron thin films, x=0.01~0.04.
Background technology
Ferroelectric material has spontaneous electric polarization, and this electric polarization can change with extra electric field and invert (switch).For Ferroelectric thin film, the high electric field required for polarization reversal can be obtained under than relatively low voltage, and this feature causes ferroelectric thin film In the electronic device for being desirably integrated into the modern times.Non-volatile ferroelectric random memory, particularly highdensity ferroelectricity memory Part has shown huge application prospect in commercial field, compared with present wide variety of memory, based on ferroelectric material Ferroelectric random read memory and have the advantages that non-volatile and reading speed is fast, therefore also have huge applications prospect.One In individual ferroelectricity memory, the deposit of information is to rely on the direction of polarization, using positive and negative storage information of the bistable state of polarization, and The reading of information is the electric current using polarization reversal.Bismuth ferrite (BiFeO3) it is a kind of typical single phase multi-iron material, although There is ferroelectricity and anti-ferromagnetism simultaneously at room temperature, but its residual polarization value is relatively low, reverse current is smaller, thus actually should It is restricted in.To improve BiFeO3The multi-ferrum property of film, most commonly seen method is exactly ion doping.At present, do not have also It is related to Bi0.89Ho0.08Sr0.03Fe0.97-xMn0.03ZnxO3The relevant report of many iron thin films and preparation method thereof.
The content of the invention
Many iron thin films of bismuth ferrite and preparation method thereof, this method are co-doped with it is an object of the invention to provide a kind of HoSrMnZn Equipment requirement is simple, and experiment condition is easily reached, doping is easily controlled, and obtained HoSrMnZn is co-doped with many iron thin films of bismuth ferrite For Bi0.89Ho0.08Sr0.03Fe0.97-xMn0.03ZnxO3Many iron thin films, can improve BiFeO3The multi-ferrum property of base film.
To achieve these goals, the present invention is adopted the following technical scheme that：
A kind of HoSrMnZn is co-doped with many iron thin films of bismuth ferrite, and the HoSrMnZn is co-doped with many iron thin films of bismuth ferrite and is Bi0.89Ho0.08Sr0.03Fe0.97-xMn0.03ZnxO3Film, x=0.01~0.04, the film is water chestnut side's perovskite structure of distortion, Space group is the R3m of tripartite's phase:R and R3c:H coexists.
The HoSrMnZn is co-doped with many iron thin films of bismuth ferrite 1.5mA, ferroelectricity is just leaking electrical conduction current for 0.15mA, and it is 1.8mA that ferroelectricity, which bears reverse current, and the negative leakage electrical conduction current of ferroelectricity is 0.13mA, tool There is the rectangular degree ferroelectric hysteresis loop of high reverse current.
The HoSrMnZn is co-doped with many iron thin films of bismuth ferrite under 1kHz frequencies, the residue under 1080kV/cm test electric fields Polarization intensity is 135 μ C/cm2, coercive field is 300kV/cm, and ferroelectric properties is improved, and ferroelectric domain is easily overturn.
Described HoSrMnZn is co-doped with the preparation method of many iron thin films of bismuth ferrite, comprises the following steps：
Step 1：It is 0.94 in molar ratio:0.08:0.03:(0.97-x):0.03:X by bismuth nitrate, holmium nitrate, strontium nitrate, Ferric nitrate, manganese acetate and zinc nitrate are dissolved in ethylene glycol monomethyl ether, are stirring evenly and then adding into acetic anhydride, are continued to stir, are obtained Precursor liquid；Wherein x=0.01~0.04；
Step 2：Precursor liquid is spin-coated on FTO/glass substrates, wet film is obtained, wet film is after spin coating at 190~220 DEG C Under toast to obtain dry film, annealed in atmosphere at 540~560 DEG C, obtain crystalline state Bi0.89Ho0.08Sr0.03Fe0.97- xMn0.03ZnxO3Film；
Step 3：By crystalline state Bi0.89Ho0.08Sr0.03Fe0.97-xMn0.03ZnxO3Film cooling to room temperature, repeat step 2 until Required thickness is reached, that is, obtains HoSrMnZn and is co-doped with many iron thin films of bismuth ferrite.
The total concentration of metal ion is 0.2~0.4mol/L in precursor liquid in the step 1.
Ethylene glycol monomethyl ether and the volume ratio of acetic anhydride are (2.5~3.5) in the precursor liquid:1.
The step 2 first cleans up FTO/glass substrates before carrying out, and then irradiates under ultraviolet light, makes FTO/ Glass substrate surfaces reach atomic cleanliness degree.
Spin coating rotating speed in the step 2 during spin coating is 3800~4000r/min, and spin coating time is 12~18s.
Baking time in the step 2 after spin coating is 8~10min.
Annealing time in the step 2 is 20~25min.
Relative to prior art, the invention has the advantages that：
The HoSrMnZn that the present invention is provided is co-doped with the preparation method of many iron thin films of bismuth ferrite, using sol-gel process, with nitre Sour bismuth, holmium nitrate, strontium nitrate, ferric nitrate, manganese acetate and zinc nitrate are raw material (bismuth nitrate excessive 5%), with ethylene glycol monomethyl ether and Acetic anhydride is solvent, prepares precursor liquid, then the technique annealed with spin-coating method and layer by layer is prepared for Bi0.89Ho0.08Sr0.03Fe0.97- xMn0.03ZnxO3Film, i.e. HoSrMnZn are co-doped with many iron thin films of bismuth ferrite.Present invention selection alkaline earth element Sr and lanthanide series Ho A doping are carried out, select transient metal Mn and Zn to carry out B doping, make the approximate bismuth ferrite crystal lattices in perovskite structure originally Distortion, structural aberration aggravation, simultaneously because Sr and Ho are to Bi3+Replacement, and Mn elements appraising at the current rate in annealing process can be with The effective Bi that draws up volatilization, reduces Fe in film2+With the content of Lacking oxygen, structure is further distorted, so as to strengthen thin Polarization intensity of the film under extra electric field.The present invention uses sol-gel technology, the method that film is prepared compared to other, should Method equipment requirement is simple, and experiment condition is easily achieved, with low cost, and reaction is easily carried out, and technical process temperature is low, prepares Journey and doping are easily controlled, chemical constituent controllable precise, are suitably prepared on big surface and surface in irregular shape thin Film, it is easy to mix some trace elements equal and quantitative, the uniformity of atom or molecular level can be obtained in a short time, HoSrMnZn prepared by the present invention is co-doped with many iron thin film uniformities of bismuth ferrite preferably, with good ferroelectric properties.
HoSrMnZn produced by the present invention is co-doped with the consistency height of many iron thin films of bismuth ferrite, even grain size, its chemistry Structural formula is Bi0.89Ho0.08Sr0.03Fe0.97-xMn0.03ZnxO3, x=0.01~0.04, the film is water chestnut side's perovskite of distortion Structure, space group is the R3m of tripartite's phase:R and R3c:H coexists, and the present invention passes through Sr, Ho, Mn and Zn quaternary codope BiFeO3 Film, effectively increases its reverse current and residual polarization value, reduces coercive field, can improve BiFeO3Many iron of base film Performance.
Further, HoSrMnZn produced by the present invention is co-doped with many iron thin films of bismuth ferrite under 1080kV/cm test electric fields Ferroelectricity rotating electric current be 1.5mA, ferroelectricity is just leaking electrical conduction current for 0.15mA, and it is 1.8mA, the negative leakage of ferroelectricity that ferroelectricity, which bears reverse current, Electrical conduction current is 0.13mA, the rectangular degree ferroelectric hysteresis loop with high reverse current.HoSrMnZn produced by the present invention is co-doped with bismuth ferrite Many iron thin films are under 1kHz frequencies, and the remanent polarization under 1080kV/cm test electric fields is 135 μ C/cm2, coercive field is 300kV/cm, ferroelectric properties is improved, and ferroelectric domain is easily overturn.
Brief description of the drawings
Fig. 1 is the XRD that HoSrMnZn prepared by the embodiment of the present invention 1 is co-doped with many iron thin films of bismuth ferrite；
Fig. 2 is the SEM figures that HoSrMnZn prepared by the embodiment of the present invention 1 is co-doped with many iron thin films of bismuth ferrite；
Fig. 3 is the SEM sectional drawings that HoSrMnZn prepared by the embodiment of the present invention 1 is co-doped with many iron thin films of bismuth ferrite；
Fig. 4 is the ferroelectric hysteresis loop figure that HoSrMnZn prepared by the embodiment of the present invention 1 is co-doped with many iron thin films of bismuth ferrite；
Fig. 5 is the I-V diagram that HoSrMnZn prepared by the embodiment of the present invention 1 is co-doped with many iron thin films of bismuth ferrite.
Embodiment
The present invention is described further with currently preferred specific embodiment below in conjunction with the accompanying drawings, raw material is analysis It is pure.
Embodiment 1
Step 1：By raw material of bismuth nitrate, holmium nitrate, strontium nitrate, ferric nitrate, manganese acetate and zinc nitrate, (bismuth nitrate is excessive 5%) it is in molar ratio, 0.94:0.08:0.03:0.96:0.03:0.01 (x=0.01) is dissolved in ethylene glycol monomethyl ether, stirring 30min, adds acetic anhydride, stirs 90min, obtains the precursor liquid for the stabilization that metal ion total concentration is 0.3mol/L；Wherein Ethylene glycol monomethyl ether and the volume ratio of acetic anhydride are 3:1；
Step 2：FTO/glass substrates are sequentially placed into ultrasonic wave in detergent, acetone, ethanol to clean, each ultrasonic wave Clean after 10min with a large amount of distilled water flushing substrates, finally dried up with nitrogen.Then FTO/glass substrates are put into baking oven to dry Bake to drying, take out and stand to room temperature.Clean substrate is placed in ultraviolet radiation instrument again and irradiates 40min, makes substrate surface Reach " atomic cleanliness degree ".Then precursor liquid is spin-coated on FTO/glass substrates, its spin coating rotating speed is 3900r/min, spin coating Time is 15s, obtains wet film, and wet film toasts 9min at 200 DEG C and obtains dry film, then the 23min that anneals in atmosphere at 550 DEG C, Produce crystalline state Bi0.89Ho0.08Sr0.03Fe0.96Mn0.03Zn0.01O3Film；
Step 3：By crystalline state Bi0.89Ho0.08Sr0.03Fe0.96Mn0.03Zn0.01O3Film cooling is to room temperature, and repeat step 2 is heavy It is multiple 12 times, that is, obtain HoSrMnZn and be co-doped with many iron thin films of bismuth ferrite.
The thing phase composition structure that HoSrMnZn is co-doped with many iron thin films of bismuth ferrite is determined using x-ray diffractometer；Use FE-SEM Determine the microscopic appearance that HoSrMnZn is co-doped with many iron thin films of bismuth ferrite；With Radiant Multiferroic instrument tests HoSrMnZn is co-doped with the leakage current density and ferroelectric properties of many iron thin films of bismuth ferrite, is tested with SQUID MPMS-XL-7 HoSrMnZn is co-doped with the ferromagnetic property of many iron thin films of bismuth ferrite at room temperature.
The many iron thin films of bismuth ferrite are co-doped with to HoSrMnZn made from embodiment 1 and carry out above tests, as a result as shown in Figure 1, Figure 2, Shown in Fig. 3, Fig. 4 and Fig. 5.
Fig. 1 is coincide with JCPDS No.74-2016 standard cards, as can be known from Fig. 1, and HoSrMnZn made from embodiment 1 is total to Mixing many iron thin films of bismuth ferrite has water chestnut side's perovskite structure of distortion, and space group is the R3m of tripartite's phase:R and R3c:H coexists, and Thin film crystallization performance is good, does not have the appearance of other impurities in film sample.
Fig. 2 show embodiment 1 made from HoSrMnZn be co-doped with many iron thin film compact structures of bismuth ferrite, grain size distribution is equal Even, grain development is good.
Fig. 3 can be seen that embodiment 1 made from HoSrMnZn be co-doped with many iron thin films of bismuth ferrite thickness be 410nm.
Fig. 4 show embodiment 1 made from HoSrMnZn be co-doped with many iron thin films of bismuth ferrite under 1kHz frequencies, 1080kV/cm The remanent polarization tested under electric field is 135 μ C/cm2, coercive field is 300kV/cm.
Fig. 5 show embodiment 1 made from HoSrMnZn be co-doped with many iron thin films of bismuth ferrite 1080kV/cm test electric field under Rotating electric current is 1.5mA, and positive leakage electrical conduction current is 0.15mA；Negative reverse current is 1.8mA, and the negative leakage electrical conduction current of ferroelectricity is 0.13mA。
By Fig. 4 and Fig. 5 can be seen that embodiment 1 made from HoSrMnZn be co-doped with the leakage electrical conduction currents of many iron thin films of bismuth ferrite Smaller, positive and negative reverse current is big and the two numerical value is close, and the tip of corresponding ferroelectric hysteresis loop is more sharp, and rectangular degree is good It is good.
Embodiment 2
Step 1：By raw material of bismuth nitrate, holmium nitrate, strontium nitrate, ferric nitrate, manganese acetate and zinc nitrate, (bismuth nitrate is excessive 5%) it is in molar ratio, 0.94:0.08:0.03:0.95:0.03:0.02 (x=0.02) is dissolved in ethylene glycol monomethyl ether, stirring 30min, adds acetic anhydride, stirs 90min, obtains the precursor liquid for the stabilization that metal ion total concentration is 0.2mol/L；Wherein Ethylene glycol monomethyl ether and the volume ratio of acetic anhydride are 2.5:1；
Step 2：FTO/glass substrates are sequentially placed into ultrasonic wave in detergent, acetone, ethanol to clean, each ultrasonic wave Clean after 10min with a large amount of distilled water flushing substrates, finally dried up with nitrogen.Then FTO/glass substrates are put into baking oven to dry Bake to drying, take out and stand to room temperature.Clean substrate is placed in ultraviolet radiation instrument again and irradiates 40min, makes substrate surface Reach " atomic cleanliness degree ".Then precursor liquid is spin-coated on FTO/glass substrates, its spin coating rotating speed is 4000r/min, spin coating Time is 12s, obtains wet film, and wet film toasts 8min at 210 DEG C and obtains dry film, then the 20min that anneals in atmosphere at 555 DEG C, Produce crystalline state Bi0.89Ho0.08Sr0.03Fe0.95Mn0.03Zn0.02O3Film；
Step 3：By crystalline state Bi0.89Ho0.08Sr0.03Fe0.95Mn0.03Zn0.02O3Film cooling is to room temperature, and repeat step 2 is heavy It is multiple 13 times, that is, obtain HoSrMnZn and be co-doped with many iron thin films of bismuth ferrite.
Embodiment 3
Step 1：By raw material of bismuth nitrate, holmium nitrate, strontium nitrate, ferric nitrate, manganese acetate and zinc nitrate, (bismuth nitrate is excessive 5%) it is in molar ratio, 0.94:0.08:0.03:0.94:0.03:0.03 (x=0.03) is dissolved in ethylene glycol monomethyl ether, stirring 30min, adds acetic anhydride, stirs 90min, obtains the precursor liquid for the stabilization that metal ion total concentration is 0.4mol/L；Wherein Ethylene glycol monomethyl ether and the volume ratio of acetic anhydride are 3.5:1；
Step 2：FTO/glass substrates are sequentially placed into ultrasonic wave in detergent, acetone, ethanol to clean, each ultrasonic wave Clean after 10min with a large amount of distilled water flushing substrates, finally dried up with nitrogen.Then FTO/glass substrates are put into baking oven to dry Bake to drying, take out and stand to room temperature.Clean substrate is placed in ultraviolet radiation instrument again and irradiates 40min, makes substrate surface Reach " atomic cleanliness degree ".Then precursor liquid is spin-coated on FTO/glass substrates, its spin coating rotating speed is 3800r/min, spin coating Time is 18s, obtains wet film, and wet film toasts 10min at 190 DEG C and obtains dry film, then the 25min that anneals in atmosphere at 540 DEG C, Produce crystalline state Bi0.89Ho0.08Sr0.03Fe0.94Mn0.03Zn0.03O3Film；
Step 3：By crystalline state Bi0.89Ho0.08Sr0.03Fe0.94Mn0.03Zn0.03O3Film cooling is to room temperature, and repeat step 2 is heavy It is multiple 11 times, that is, obtain HoSrMnZn and be co-doped with many iron thin films of bismuth ferrite.
Embodiment 4
Step 1：By raw material of bismuth nitrate, holmium nitrate, strontium nitrate, ferric nitrate, manganese acetate and zinc nitrate, (bismuth nitrate is excessive 5%) it is in molar ratio, 0.94:0.08:0.03:0.93:0.03:0.04 (x=0.04) is dissolved in ethylene glycol monomethyl ether, stirring 30min, adds acetic anhydride, stirs 90min, obtains the precursor liquid for the stabilization that metal ion total concentration is 0.32mol/L；Wherein Ethylene glycol monomethyl ether and the volume ratio of acetic anhydride are 3.2:1；
Step 2：FTO/glass substrates are sequentially placed into ultrasonic wave in detergent, acetone, ethanol to clean, each ultrasonic wave Clean after 10min with a large amount of distilled water flushing substrates, finally dried up with nitrogen.Then FTO/glass substrates are put into baking oven to dry Bake to drying, take out and stand to room temperature.Clean substrate is placed in ultraviolet radiation instrument again and irradiates 40min, makes substrate surface Reach " atomic cleanliness degree ".Then precursor liquid is spin-coated on FTO/glass substrates, its spin coating rotating speed is 4000r/min, spin coating Time is 14s, obtains wet film, wet film toasts 8.5min at 220 DEG C and obtains dry film, then is annealed in atmosphere at 560 DEG C 22min, produces crystalline state Bi0.89Ho0.08Sr0.03Fe0.93Mn0.03Zn0.04O3Film；
Step 3：By crystalline state Bi0.89Ho0.08Sr0.03Fe0.93Mn0.03Zn0.04O3Film cooling is to room temperature, and repeat step 2 is heavy It is multiple 12 times, that is, obtain HoSrMnZn and be co-doped with many iron thin films of bismuth ferrite.
Above said content is to combine specific preferred embodiment further description made for the present invention, is not Whole or unique embodiment, those of ordinary skill in the art are by reading description of the invention to technical solution of the present invention Any equivalent conversion taken, is that claim of the invention is covered.

Claims (10)

1. a kind of HoSrMnZn is co-doped with many iron thin films of bismuth ferrite, it is characterised in that it is thin that the HoSrMnZn is co-doped with many iron of bismuth ferrite Film is Bi0.89Ho0.08Sr0.03Fe0.97-xMn0.03ZnxO3Film, x=0.01~0.04, the film is water chestnut side's perovskite of distortion Structure, space group is the R3m of tripartite's phase:R and R3c:H coexists.
2. HoSrMnZn according to claim 1 is co-doped with many iron thin films of bismuth ferrite, it is characterised in that the HoSrMnZn is total to It is 1.5mA to mix many iron thin films of bismuth ferrite in the 1080kV/cm ferroelectricity rotating electric currents tested under electric field, and ferroelectricity is just leaking electrical conduction current and is being 0.15mA, it is 1.8mA that ferroelectricity, which bears reverse current, and the negative leakage electrical conduction current of ferroelectricity is 0.13mA, the rectangular degree electricity with high reverse current Hysteresis curves.
3. HoSrMnZn according to claim 1 is co-doped with many iron thin films of bismuth ferrite, it is characterised in that the HoSrMnZn is total to The many iron thin films of bismuth ferrite are mixed under 1kHz frequencies, and the remanent polarization under 1080kV/cm test electric fields is 135 μ C/cm2, rectify Stupid field is 300kV/cm, and ferroelectric domain is easily overturn.
4. the HoSrMnZn in claim 1-3 described in any one is co-doped with the preparation method of many iron thin films of bismuth ferrite, its feature It is, comprises the following steps：
Step 1：It is 0.94 in molar ratio:0.08:0.03:(0.97-x):0.03:X is by bismuth nitrate, holmium nitrate, strontium nitrate, nitric acid Iron, manganese acetate and zinc nitrate are dissolved in ethylene glycol monomethyl ether, are stirring evenly and then adding into acetic anhydride, are continued to stir, are obtained forerunner Liquid；Wherein x=0.01~0.04；
Step 2：Precursor liquid is spin-coated on FTO/glass substrates, wet film is obtained, wet film dries after spin coating at 190~220 DEG C Dry film is baked to obtain, is annealed in atmosphere at 540~560 DEG C, obtains crystalline state Bi0.89Ho0.08Sr0.03Fe0.97-xMn0.03ZnxO3It is thin Film；
Step 3：By crystalline state Bi0.89Ho0.08Sr0.03Fe0.97-xMn0.03ZnxO3Film cooling is to room temperature, and repeat step 2 is until reaching Required thickness, that is, obtain HoSrMnZn and be co-doped with many iron thin films of bismuth ferrite.
5. HoSrMnZn according to claim 4 is co-doped with the preparation method of many iron thin films of bismuth ferrite, it is characterised in that described The total concentration of metal ion is 0.2~0.4mol/L in precursor liquid in step 1.
6. HoSrMnZn according to claim 4 is co-doped with the preparation method of many iron thin films of bismuth ferrite, it is characterised in that described Ethylene glycol monomethyl ether and the volume ratio of acetic anhydride are (2.5~3.5) in precursor liquid:1.
7. HoSrMnZn according to claim 4 is co-doped with the preparation method of many iron thin films of bismuth ferrite, it is characterised in that described Step 2 first cleans up FTO/glass substrates before carrying out, and then irradiates under ultraviolet light, reaches FTO/glass substrate surfaces To atomic cleanliness degree.
8. HoSrMnZn according to claim 4 is co-doped with the preparation method of many iron thin films of bismuth ferrite, it is characterised in that described Spin coating rotating speed in step 2 during spin coating is 3800~4000r/min, and spin coating time is 12~18s.
9. HoSrMnZn according to claim 4 is co-doped with the preparation method of many iron thin films of bismuth ferrite, it is characterised in that described Baking time in step 2 after spin coating is 8~10min.
10. HoSrMnZn according to claim 4 is co-doped with the preparation method of many iron thin films of bismuth ferrite, it is characterised in that institute It is 20~25min to state the annealing time in step 2.
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109772349A (en) * 2017-11-13 2019-05-21 广州中国科学院沈阳自动化研究所分所 A kind of erbium-codoped bismuth ferrite photocatalyst of solid-carrying type zinc and its preparation method and application

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CN104538140A (en) * 2014-12-11 2015-04-22 陕西科技大学 Multiferroic Bi1-xRExFe0.97-yMn0.03TMyO3/CoFe2O4 composite film and preparation method thereof
CN105837196A (en) * 2016-03-29 2016-08-10 陕西科技大学 Bi0.92-xHo0.08AExFe0.97Mn0.03O3-Zn1-yNiyFe2O4 ferromagnetic composite film and preparation method thereof

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CN104538140A (en) * 2014-12-11 2015-04-22 陕西科技大学 Multiferroic Bi1-xRExFe0.97-yMn0.03TMyO3/CoFe2O4 composite film and preparation method thereof
CN105837196A (en) * 2016-03-29 2016-08-10 陕西科技大学 Bi0.92-xHo0.08AExFe0.97Mn0.03O3-Zn1-yNiyFe2O4 ferromagnetic composite film and preparation method thereof

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109772349A (en) * 2017-11-13 2019-05-21 广州中国科学院沈阳自动化研究所分所 A kind of erbium-codoped bismuth ferrite photocatalyst of solid-carrying type zinc and its preparation method and application

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