CN105842996B - A kind of wafer carrying adsorptive pressure optimization method of litho machine - Google Patents
A kind of wafer carrying adsorptive pressure optimization method of litho machine Download PDFInfo
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- CN105842996B CN105842996B CN201610370135.6A CN201610370135A CN105842996B CN 105842996 B CN105842996 B CN 105842996B CN 201610370135 A CN201610370135 A CN 201610370135A CN 105842996 B CN105842996 B CN 105842996B
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- wafer
- overlay mark
- adsorptive pressure
- litho machine
- pattern
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Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7073—Alignment marks and their environment
- G03F9/7084—Position of mark on substrate, i.e. position in (x, y, z) of mark, e.g. buried or resist covered mark, mark on rearside, at the substrate edge, in the circuit area, latent image mark, marks in plural levels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0332—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their composition, e.g. multilayer masks, materials
Abstract
The invention discloses a kind of wafer carrying adsorptive pressure optimization method of litho machine, is included in first, second overlay mark corresponding to the first, second graphic element forming position in the pattern area of mask first, second；The first overlay mark layer is formed on the test die；The second overlay mark layer pattern is formed on the test die；The center offset of first, second overlay mark is measured, calculates the first wafer alignment residue；Form the second overlay mark layer pattern again on the test die, and calculate the second wafer alignment residue；The second overlay mark layer pattern is repeatedly formed, obtains the corresponding relation between different wafer carrying adsorptive pressure and wafer alignment residues.Optimal wafer carrying adsorptive pressure when wafer alignment precision meets photoetching process requirement can be found by the present invention, so as to reach the beneficial effect of optimization wafer carrying adsorptive pressure, wafer alignment precision caused by efficiently solving the problems, such as vacuum shape change.
Description
Technical field
The present invention relates to semiconductor microelectronic technology field, is adsorbed more particularly, to a kind of wafer carrying of litho machine
Pressure optimization method.
Background technology
With the development of semiconductor technology, the area of semiconductor chip is less and less, and the semiconductor devices in chip is crucial
Size also constantly reduces, therefore the requirement more and more higher to semiconductor technology precision.
In the manufacturing process of semiconductor devices, it usually needs successively by more than the pattern overlapping of more than 40 layers different masks
Onto wafer.Therefore, in order to ensure the electric conductivity of semiconductor devices, it is desirable to be required for per layer pattern with preceding layer pattern have compared with
Good alignment (Overlay) precision.
In semiconductor processing, in order to prevent wafer from occurring to slide and improve the precision of transmission position in transmit process,
It is direct with wafer that wafer is generally fixed on to arm, plummer of delivery unit etc. using negative pressure of vacuum technology using delivery unit
On the part of contact.It is that a kind of wafer is sent to crystalline substance from the central plummer of litho machine to refer to Fig. 1 a- Fig. 1 b, Fig. 1 a- Fig. 1 b
Transmission view during circle treatment bench.As shown in Figure 1a, in photolithographic exposure technique, when wafer (wafer) is from litho machine
When central plummer (center table) is sent to litho machine wafer-process platform (wafer handler, WH), vacuum will be used
Wafer adsorption is fixed on three contact bolts (pin) of central plummer by negative pressure technique, i.e., is provided by three contact bolts true
Idling pressure, to provide certain wafer carrying adsorptive pressure；As shown in Figure 1 b, when wafer is placed on wafer-process platform,
The negative pressure of vacuum that three contact bolts have easily causes the deformation of wafer.Before wafer will expose, the deformation of wafer is held
Easily cause wafer alignment precision deviation.
It is a kind of wafer alignment precision residue schematic diagram to refer to Fig. 2 a- Fig. 2 b, Fig. 2 a- Fig. 2 b.As shown in Figure 2 a, by
Deformed upon in the exposing wafer unit that bolt contact site is touched with three piece-root graftings, cause wafer and three piece-root graftings to touch bolt and touch opening position
Alignment precision residue is very big, and this part of residue can not be maked corrections in photoetching process.When wafer alignment residue
During beyond the process window of alignment precision, the alignment precision of front and rear layer is inadequate, will have a strong impact on the good of semiconductor devices production
Rate.Fig. 2 b show relative position distribution of three contact bolts on wafer, itself and the alignment precision residue figure shown in Fig. 2 a
Position correspondence.
Wafer alignment precision problem caused by order to mitigate vacuum shape change, traditional way are to reduce wafer by litho machine
Plummer is entreated to the transfer rate of litho machine wafer-process platform, and static one section after wafer is sent to litho machine wafer-process platform
Time, wafer to be exposed is set to recover deformation, wafer alignment precision problem caused by so as to mitigate vacuum shape change.But this kind of method meeting
Cause the reduction of litho machine production efficiency, ultimately result in production loss of energy.
It is therefore proposed that a kind of method for optimizing wafer carrying adsorptive pressure, wafer set caused by effectively solving vacuum shape change
Precision problem is carved to be particularly important.
The content of the invention
It is an object of the invention to overcome drawbacks described above existing for prior art, there is provided a kind of wafer carrying of litho machine is inhaled
Enclosure pressure optimization method, wafer alignment precision caused by solve the problems, such as vacuum shape change, improve wafer alignment precision.
To achieve the above object, technical scheme is as follows：
A kind of wafer carrying adsorptive pressure optimization method of litho machine, comprises the following steps：
Step S01：A mask is provided, the mask includes two pattern areas of size identical first, second, described
First, second pattern area includes some first, second graphic elements, quantity, the size of first, second graphic element respectively
It is identical, and mutually corresponded in the position in first, second pattern area, first graphic element contains the first overlay mark, institute
The correspondence position for stating second graph unit contains the second overlay mark, and the pattern center of first, second overlay mark is relative
Should；
Step S02：One test wafer is provided, first medium coating is deposited on the test wafer surface, then, utilizes institute
The first pattern area of mask is stated, the first overlay mark layer is formed on the test wafer；
Step S03：Second medium coating is deposited on the first overlay mark layer, then, regulation setting litho machine
First wafer carrying adsorptive pressure, and by photoresist gluing, exposed and developed technique, by the second pattern of mask area
Second overlay mark pattern is transferred on test wafer；
Step S04：Center offset of second overlay mark on test wafer with respect to the first overlay mark is measured,
And calculate the first wafer alignment residue；
Step S05：The photoresist of the second pattern region layer on test wafer is removed, then, the second of regulation setting litho machine
Wafer carrying adsorptive pressure, and pass through photoresist gluing, exposed and developed technique, the second overlay mark layer pattern is formed again,
The center offset of the second overlay mark on test wafer with respect to the first overlay mark is measured, and it is residual to calculate the second wafer alignment
Stay value；
Step S06：Repeat step S05, with obtain different wafer carrying adsorptive pressures and wafer alignment residue it
Between corresponding relation, and therefrom choose meet photoetching process requirement wafer alignment precision corresponding to optimal wafer carrying absorption
Pressure.
Preferably, first, second overlay mark is respectively formed in four of first, second graphic element on the mask
Corresponding corner.
Preferably, on the mask first, second overlay mark it is of different sizes.
Preferably, the pattern of first, second overlay mark is identical on the mask.
Preferably, the pattern center of first, second overlay mark is corresponding on the mask.
Preferably, first, second dielectric coated is oxide coating.
Preferably, the thickness of first, second dielectric coated is 5-20nm.
Preferably, in step S02, by photoetching, etching, chemical vapor deposition and chemical mechanical milling tech, described
The first overlay mark layer is formed on test wafer.
Preferably, in step S05, ashing processing is carried out to be gone to the photoresist of the second pattern region layer on test wafer
Remove.
Preferably, measuring instrument is measured to center offset using changing.
The present invention has advantages below：
1) by establishing a quantitative analysis method, it may be determined that litho machine board difference wafer carrying adsorptive pressure is to crystalline substance
The influence of circle alignment precision；
2) by quantitative analysis method, wafer alignment precision can be found and meet that optimal wafer during photoetching process requirement is held
Adsorptive pressure is carried, so as to reach the beneficial effect of optimization wafer carrying adsorptive pressure, efficiently solves crystalline substance caused by vacuum shape change
Circle alignment precision problem.
Brief description of the drawings
Fig. 1 a- Fig. 1 b be a kind of wafer from the central plummer of litho machine be sent to wafer-process platform when transmission state show
It is intended to；
Fig. 2 a- Fig. 2 b are a kind of wafer alignment precision residue schematic diagrames；
Fig. 3 is a kind of wafer carrying adsorptive pressure optimization method flow chart of litho machine of a preferred embodiment of the present invention；
Fig. 4 a- Fig. 4 d are the mask schematic diagrames formed in a preferred embodiment of the present invention according to Fig. 3 method；
Fig. 5 is the test wafer exposing unit schematic diagram in a preferred embodiment of the present invention；
Fig. 6 is the second overlay mark and the first overlay mark alignment schematic diagram in a preferred embodiment of the present invention；
Fig. 7 is the relation of the wafer alignment residue and wafer carrying adsorptive pressure formed in a preferred embodiment of the present invention
Figure.
Embodiment
Below in conjunction with the accompanying drawings, the embodiment of the present invention is described in further detail.
It should be noted that in following embodiments, when embodiments of the present invention are described in detail, in order to clear
Ground represents the structure of the present invention in order to illustrate, special that structure in accompanying drawing is not drawn according to general proportion, and has carried out part
Amplification, deformation and simplified processing, therefore, should avoid being understood in this, as limitation of the invention.
In embodiment of the invention below, referring to Fig. 3, Fig. 3 is one kind of a preferred embodiment of the present invention
The wafer carrying adsorptive pressure optimization method flow chart of litho machine.A kind of as shown in figure 3, wafer carrying of litho machine of the present invention
Adsorptive pressure optimization method, comprises the following steps：
Perform step S1：Corresponding to the first, second graphic element forming position in the pattern area of mask first, second
First, the second overlay mark.
It is to be covered in a preferred embodiment of the present invention according to what Fig. 3 method was formed to refer to Fig. 4 a- Fig. 4 d, Fig. 4 a- Fig. 4 d
Masterplate schematic diagram.As shown in fig. 4 a, there is provided a mask, the mask include two figures of size identical first, second
Case area F1, F2.As shown in Figure 4 b, it shows less graphic element distribution enlarged diagram in mask pattern area F1, F2, often
Individual first or second pattern area respectively comprising several first or second graph cell S 1 or S2, it is illustrated that be one 5 × 6 graphic elements
Array；Quantity, the size of first, second graphic element are identical, and in a pair of the position phase 1 in first, second pattern area
Should；First graphic element contains the first overlay mark T1, and the correspondence position of the second graph unit contains the second alignment
Mark T2；For example, the first or second overlay mark T1 or T2 on the mask can be respectively formed in first or second graph
Four corresponding corners of cell S 1 or S2.As illustrated in fig. 4 c, it is shown in mask pattern area on less graphic element S1, S2
Overlay mark profiles versus's enlarged diagram, wherein left figure are the first graphic element S1, and right figure is second graph cell S 2, the
First, second overlay mark T1, T2 is respectively formed in four of first, second graphic element corresponding corners, its pattern can it is identical but
Big I is different, and the pattern center of first, second overlay mark is corresponding on mask.As shown in figure 4d, its display one
The first overlay mark T1 of kind and the second overlay mark T2 enlarged diagrams, first, second overlay mark T1, T2 have identical not
Continuous box-shaped pattern, its pattern center is corresponding, but pattern magnitude can be different, so are easy to differentiate when carrying out alignment.
Perform step S2：The first overlay mark layer is formed on the test die.
Referring to Fig. 5, Fig. 5 is the test wafer exposing unit schematic diagram in a preferred embodiment of the present invention.Such as Fig. 5 institutes
Show, there is provided a test wafer, first medium coating can be deposited on the test wafer surface by chemical vapor deposition, medium applies
Layer can use oxide (s) coating material, such as can be silica coating；Then, using the first pattern area of the mask,
The first pattern of mask area the first overlay mark pattern is transferred on test wafer by photoetching, test wafer includes complete expose
Light unit FS and wafer edge exposure unit ES；Then, through over etching, chemical vapor deposition and cmp in the survey
The first overlay mark layer is formed on examination wafer.
Perform step S3：The second overlay mark layer pattern is formed on the test die.
The chemical vapor deposition cvd silicon oxide second medium painting in the first overlay mark layer substrate again can be passed through
Layer；Then, the first wafer carrying adsorptive pressure P1 of regulation setting litho machine, for example, making P1=-100kPa；And pass through photoetching
Glue gluing, exposed and developed technique, it is brilliant that the second overlay mark layer pattern in the second pattern of mask area is transferred to test
On circle.
As a preferred embodiment, the thickness of the first, second dielectric coated such as silica medium coating is
5-20nm.It is preferred that the thickness of oxide coating is 5nm, to ensure that the thickness of wafer is sufficiently thin, so as to be held to litho machine wafer
It is sensitive enough to carry adsorptive pressure.
Perform step S4：The center offset of first, second overlay mark is measured, calculates the first wafer alignment residual
Value.
Show referring to Fig. 6, Fig. 6 is the second overlay mark in a preferred embodiment of the present invention and the first overlay mark alignment
It is intended to.As shown in fig. 6, can be by repeatedly measuring above-mentioned the second alignment with discontinuous box-shaped pattern on test wafer to measuring instrument
The center offset of relative first overlay mark of mark, and calculate as the first wafer carrying adsorptive pressure P1=-100kPa
Wafer X/Y component alignment residues D1=8nm.
Perform step S5：Form the second overlay mark layer pattern again on the test die, and calculate the second wafer set
Carve residue.
Ashing processing is carried out to the photoresist of the second pattern region layer on test wafer, to remove it.Then, adjust again
The second wafer carrying adsorptive pressure P2=-90kPa of litho machine is set, and by photoresist gluing, exposed and developed technique, then
The second overlay mark layer pattern of secondary formation；Then, the second overlay mark is measured on test wafer again with respect to the first overlay mark
Center offset, and calculate the second wafer alignment residue D2=7.5nm.
Perform step S6：The second overlay mark layer pattern is repeatedly formed, obtains different wafer carrying adsorptive pressures and wafer
Corresponding relation between alignment residue.
Adsorbed referring to Fig. 7, Fig. 7 is the wafer alignment residue formed in a preferred embodiment of the present invention with wafer carrying
The graph of a relation of pressure；Abscissa represents wafer carrying adsorptive pressure (unit in figure：KPa), ordinate represents wafer alignment residual
It is worth (unit：nm).As shown in fig. 7, repeat step S5, you can obtain different wafer carrying adsorptive pressure Pn and wafer alignment
Corresponding relation between residue Dn, so as to find the optimal crystalline substance corresponding to the wafer alignment precision for meeting photoetching process requirement
Circle carrying adsorptive pressure, i.e., optimal wafer carrying adsorptive pressure when wafer alignment precision meets photoetching alignment deviation 6nm-
60kPa。
The above method of the present invention is applicable to for including I Lithographies machine, KrF litho machines, ArF litho machines and EUV lithography
The optimization of the photoetching equipment wafer carrying adsorptive pressure such as machine.
In summary, the present invention is by establishing a quantitative analysis method, it may be determined that litho machine board difference wafer is held
Carry influence of the adsorptive pressure to wafer alignment precision；And by quantitative analysis method, wafer alignment precision can be found and meet photoetching
Optimal wafer carrying adsorptive pressure during technological requirement, so as to reach the beneficial effect of optimization wafer carrying adsorptive pressure, have
Wafer alignment precision caused by effect solves the problems, such as vacuum shape change.
Above-described is only the preferred embodiments of the present invention, the embodiment and the patent guarantor for being not used to the limitation present invention
Scope, therefore the equivalent structure change that every specification and accompanying drawing content with the present invention is made are protected, similarly should be included in
In protection scope of the present invention.
Claims (10)
1. the wafer carrying adsorptive pressure optimization method of a kind of litho machine, it is characterised in that comprise the following steps：
Step S01：One mask is provided, the mask includes two pattern areas of size identical first, second, and described
First, the second pattern area includes some first, second graphic elements, quantity, the size phase of first, second graphic element respectively
Together, and in the position in first, second pattern area mutually correspond, first graphic element contains the first overlay mark, described
The correspondence position of second graph unit contains the second overlay mark, and the pattern center of first, second overlay mark is corresponding；
Step S02：One test wafer is provided, first medium coating is deposited on the test wafer surface, then, is covered using described
First pattern area of masterplate, forms the first overlay mark layer on the test wafer；
Step S03：Second medium coating is deposited on the first overlay mark layer, then, the first of regulation setting litho machine
Wafer carrying adsorptive pressure, and by photoresist gluing, exposed and developed technique, by the second of the second pattern of mask area
Overlay mark pattern is transferred on test wafer；
Step S04：Center offset of second overlay mark on test wafer with respect to the first overlay mark is measured, and counted
Calculate the first wafer alignment residue；
Step S05：The photoresist of the second pattern region layer on test wafer is removed, then, the second wafer of regulation setting litho machine
Adsorptive pressure is carried, and by photoresist gluing, exposed and developed technique, forms the second overlay mark layer pattern again, measures
On test wafer the second overlay mark with respect to the first overlay mark center offset, and calculate the second wafer alignment residual
Value；
Step S06：Step S05 is repeated, to obtain between different wafer carrying adsorptive pressure and wafer alignment residues
Corresponding relation, and therefrom choose the optimal wafer carrying adsorption pressure corresponding to the wafer alignment precision for meeting photoetching process requirement
Power.
2. the wafer carrying adsorptive pressure optimization method of litho machine according to claim 1, it is characterised in that the mask
Upper first, second overlay mark of version is respectively formed in four corresponding corners of first, second graphic element.
3. the wafer carrying adsorptive pressure optimization method of litho machine according to claim 1 or 2, it is characterised in that described
First, second overlay mark is of different sizes on mask.
4. the wafer carrying adsorptive pressure optimization method of litho machine according to claim 3, it is characterised in that the mask
The pattern of upper first, second overlay mark of version is identical.
5. the wafer carrying adsorptive pressure optimization method of litho machine according to claim 4, it is characterised in that the mask
The pattern center of upper first, second overlay mark of version is corresponding.
6. the wafer carrying adsorptive pressure optimization method of litho machine according to claim 1, it is characterised in that described
First, second medium coating is oxide coating.
7. the wafer carrying adsorptive pressure optimization method of the litho machine according to claim 1 or 6, it is characterised in that described
The thickness of first, second dielectric coated is 5-20nm.
8. the wafer carrying adsorptive pressure optimization method of litho machine according to claim 1, it is characterised in that step S02
In, by photoetching, etching, chemical vapor deposition and chemical mechanical milling tech, the first alignment is formed on the test wafer
Mark layer.
9. the wafer carrying adsorptive pressure optimization method of litho machine according to claim 1, it is characterised in that step S05
In, ashing processing is carried out to remove it to the photoresist of the second pattern region layer on test wafer.
10. the wafer carrying adsorptive pressure optimization method of litho machine according to claim 1, it is characterised in that using changing
Measuring instrument is measured to center offset.
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| US20070243492A1 (en) * | 2006-04-14 | 2007-10-18 | Mcelheny Peter J | Double exposure photolithographic process |
| CN103904011B (en) * | 2012-12-28 | 2016-12-28 | 上海微电子装备有限公司 | Warpage silicon-chip absorption device and absorption method thereof |
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