CN105826461A - Temperature stabilized piezoelectric composite ceramic vibrator - Google Patents

Temperature stabilized piezoelectric composite ceramic vibrator Download PDF

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CN105826461A
CN105826461A CN201610129884.XA CN201610129884A CN105826461A CN 105826461 A CN105826461 A CN 105826461A CN 201610129884 A CN201610129884 A CN 201610129884A CN 105826461 A CN105826461 A CN 105826461A
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temperature
piezoelectric
dielectric ceramic
capacitance
ceramic
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CN105826461B (en
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欧明
姜知水
文理
董进杰
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00Piezoelectric or electrostrictive devices
    • H10N30/101Piezoelectric or electrostrictive devices with electrical and mechanical input and output, e.g. having combined actuator and sensor parts
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00Piezoelectric or electrostrictive devices
    • H10N30/80Constructional details
    • H10N30/85Piezoelectric or electrostrictive active materials
    • H10N30/853Ceramic compositions

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
  • Compositions Of Oxide Ceramics (AREA)

Abstract

The invention provides a temperature stabilized piezoelectric composite ceramic vibrator. The temperature stabilized piezoelectric composite ceramic vibrator comprises piezoelectric ceramic, dielectric ceramic, a first lead-out end and a second lead-out end. A first electrode layer is formed on the surface of the two ends of the piezoelectric ceramic. A second electrode layer is formed on the surface of the two ends of the dielectric ceramic. The first lead-out end is closely contacted with the first electrode layer and the second electrode layer of the same side of the piezoelectric ceramic and the dielectric ceramic. The second lead-out end is closely contacted with the first electrode layer and the second electrode layer of the other same side of the piezoelectric ceramic and the dielectric ceramic. Temperature coefficient of capacitance is within -35% at temperature of -30 DEG C, the temperature coefficient of capacitance is within +35% at temperature of 85 DEG C, and the temperature coefficient of capacitance of the piezoelectric ceramic increases along with rising of temperature. The temperature coefficient of capacitance of the dielectric ceramic is within +65% at temperature of -30 DEG C, the temperature coefficient of capacitance is within -55% at temperature of 85 DEG C, and the temperature coefficient of capacitance of the dielectric ceramic decreases along with rising of temperature.

Description

A kind of temperature stabilization piezoelectric composite ceramics oscillator
Technical field
The present invention relates to piezoelectric ceramics field, be specifically related to a kind of temperature stabilization piezoelectric composite ceramics oscillator, especially for the piezoelectric ceramic vibrator of back-up radar probe.
Background technology
From the appearance of piezoelectric ceramics, the most many countries have all carried out systematic research to piezoelectric ceramics, and along with going deep into of developing, have also been developed the PZT piezoceramic material of a series of superior performance, the range of application of piezoceramic material is expanded the most significantly, is wherein modified based on lead zirconate titanate.In order to obtain high performance piezoelectric ceramics, current big multipair PZT material itself is doped modification, by being doped A position in PZT piezoelectric ceramics or B position ionic replacement, to adjusting the performance of PZT piezoelectric ceramics.
Along with the development of technology, modern components and parts are more and more higher to the performance requirement of piezoelectric ceramics.On the one hand this be embodied in above its preferable piezoelectric property, and still further aspect, the raising required piezoelectric device safety coefficient due to expansion and the people of its range of application, the requirement of its temperature stability is more and more higher.In order to improve temperature stability, traditional method is mainly adjusted by formula and realizes, but it is constrained to PZT material itself, temperature stability to be obtained preferable PZT ceramic material is relatively difficult, this embodies, and reproduction difficulty is big, the production cycle is long, and the combination property of the piezoceramic material obtained is the most satisfactory.
As Chinese patent CN201410053547.9 discloses a kind of sodium potassium niobate base leadless piezoelectric ceramics material, by with potassium-sodium niobate as substrate, mix Section 2 material and the 3rd component Bi(Mg, Ti) O3Set up ternary system, it is thus achieved that a kind of piezoelectric constant d33Being 212 ~ 225pC/N, electromechanical coupling factor is the leadless piezoelectric ceramics of 40% ~ 41.5%, but it does not provide the temperature coefficient of capacitance of this piezoceramic material, and too low electromechanical coupling factor limits the requirement meeting application.
Also as Chinese patent 201310396233.3 discloses a kind of piezoceramic material, sintered body and preparation method thereof, piezoelectric ceramic devices, by PZT piezoelectric ceramics being carried out A and B position substituting modification, and doped with rare-earth elements is modified, obtain a kind of relative dielectric constant be 1262, electromechanical coupling factor be 0.63, piezoelectric constant d33It is the piezoceramic material of the temperature compensation characteristic of 322 pC/N, but too low dielectric properties and relatively low electromechanical coupling factor cause its combination property not make people satisfied.
Disclosing a kind of piezoelectric-actuator in the patent document of another part of Application No. CN200580030714.6, its fluctuating margin requiring the electric capacity of the piezoelectric element used to vary with temperature and producing is within ± 14% or ± 11%.Such as, in the practical process of piezoelectricity radar for backing car, automotive needs can also normally can use under different temperature occasions.The temperature applicable range of current international reversing radar of vehicle probe is-30 DEG C ~+85 DEG C, Capacitance Shift Rate in this temperature range controls ± 15%, Japan have part producer be controlled at ± 10% within, and piezoelectric ceramics Capacitance Shift Rate is more hour, and the stability of its automobile probe is the best.And while existing piezoelectric ceramic vibrator to keep the electrical property (dielectric constant, dynamo-electric Rhizoma Nelumbinis syzygy number) of good piezoelectricity so that it is Capacitance Shift Rate controls ± 10% and has been difficult to batch industrialization.
For this kind of situation, those skilled in the art's research previously also achieves certain achievement, in Chinese patent CN201610072538.2, use piezoceramics layer and the series connection of dielectric ceramic layer of different temperature coefficients, finally obtained the piezoelectric ceramic vibrator that temperature stabilization performance is excellent.But in this technical scheme, owing to dielectric ceramic sheet thickness requirement is relatively thin, only 0.01 ~ 0.1mm, for the production technology of batch, difficulty is relatively big, and medium is easily deformed cracking when sintering, and defect rate is high, causes production cost higher.Therefore, invention technician is during improving this technical optimization, have surprisingly found that, when piezoelectric ceramics medium is changed in parallel with the version of dielectric ceramic, the thickness of dielectric ceramic can substantially increase to 0.1 ~ 0.9mm, and the overall performance of piezoelectric ceramic vibrator can also be maintained at higher level, this solves the deformation of previous batch production process dielectric ceramic post sintering, the problem of cracking undoubtedly.
Summary of the invention
The present invention is to solve problem present in existing piezoelectric ceramic vibrator, provide a kind of combination property good, simultaneously in the range of-30 DEG C ~+85 DEG C, temperature coefficient of capacitance is the piezoelectric ceramic vibrator of-3% ~+3%, owing to using piezoelectric ceramics and dielectric ceramic form parallel with one another, expand the thickness requirement of dielectric ceramic, improve the dielectric ceramic performance when sintering, improve yields, reduce production cost, and having surprisingly found that, there is not deterioration in the appearance temperature characteristics of the piezoelectric ceramic vibrator entirety that the present invention provides.
In order to realize the technical purpose of the present invention, the present invention adopts the following technical scheme that.
A kind of temperature stabilization piezoelectric composite ceramics oscillator, including:
Piezoelectric ceramics, is formed with the first electrode layer on the surface at described piezoelectric ceramics two ends;
Dielectric ceramic, is formed with the second electrode lay on the surface at described dielectric ceramic two ends;
First exit, described first exit is in close contact with described piezoelectric ceramics and the first electrode layer of dielectric ceramic homonymy, the second electrode lay;
Second exit, described second exit is in close contact with described dielectric ceramic and the first electrode layer of another homonymy of dielectric ceramic, the second electrode lay;
Wherein, the temperature coefficient of capacitance of described piezoelectric ceramics, within the temperature coefficient of capacitance of-30 DEG C are-35%, within the temperature coefficient of capacitance of 85 DEG C are+35%, the Capacitance Shift Rate of described piezoelectric ceramics increases with the rising of temperature, described dielectric ceramic is within the temperature coefficient of capacitance of-30 DEG C is+65%, within the temperature coefficient of capacitance of 85 DEG C are-55%, the Capacitance Shift Rate of described dielectric ceramic reduces with the rising of temperature, and described piezoelectric ceramics, dielectric ceramic mutually compensate at the temperature coefficient of capacitance of-30 DEG C ~ 85 DEG C.
Preferably, the chemical composition of described piezoelectric ceramics is Pb(ZraTi1-a) O3, wherein 0.45 < a≤0.55.
Preferably, the chemical composition of described dielectric ceramic is Ba (Ti1-aZr a )O3, wherein 0.1 < a≤0.4.
Preferably, the thickness of described dielectric ceramic is 0.1 ~ 0.9mm.
It is furthermore preferred that the thickness of described dielectric ceramic is 0.4 ~ 0.7mm.
Preferably, described first electrode layer and the second electrode lay are metal electrodes.
It is furthermore preferred that described metal electrode is the one in silver electrode or silver/palladium electrode.
Preferably, described piezoelectric ceramics is single-layer ceramic, and described dielectric ceramic is single or multiple lift ceramic condenser composition.
Preferably, described temperature stabilization piezoelectric ceramic vibrator is-3% ~+3% at the Capacitance Shift Rate of-30 DEG C ~+85 DEG C.
The invention has the beneficial effects as follows: supplied a kind of combination property good, simultaneously in the range of-30 DEG C ~+85 DEG C, temperature coefficient of capacitance is the piezoelectric ceramic vibrator of-3% ~+3%, use piezoelectric ceramics and dielectric ceramic form parallel with one another, expand the thickness requirement of dielectric ceramic, improve the dielectric ceramic performance when sintering, improve yields, reduce production cost.And having surprisingly found that, there is not deterioration in the appearance temperature characteristics of the piezoelectric ceramic vibrator entirety that the present invention provides, thus realizes having good appearance temperature variation coefficient in-30 DEG C ~+85 DEG C, when+85 DEG C, its Capacitance Shift Rate controls+3%, and when-30 DEG C, its Capacitance Shift Rate controls-3%.
The present invention is by using novel structure to design, and on the basis of keeping good piezoelectric property, improves the electroceramics medium performance when sintering, improves product yield, reduce production cost.Deisgn product the most of the present invention makes the appearance temperature coefficient of piezoelectric ceramic vibrator be greatly improved, and is greatly improved reversing automobile and assists piezoelectric property and the reliability of probe, expands the range of application of product, can be widely applied in the automobile application of higher use environmental requirement.
Accompanying drawing explanation
For the technical scheme being illustrated more clearly that in the embodiment of the present invention, in describing embodiment below, the required accompanying drawing used is briefly described:
Fig. 1 is the structural representation of the present invention a kind of temperature stabilization piezoelectric composite ceramics oscillator.
In figure: 1-piezoelectric ceramics;2-the first electrode layer;3-dielectric ceramic;4-the second electrode lay;5-the first exit;6-the second exit.
Detailed description of the invention
In order to make technical problem solved by the invention, technical scheme and beneficial effect clearer, below in conjunction with the accompanying drawings and embodiment, the present invention is further elaborated.Should be appreciated that specific embodiment described herein, only in order to explain the present invention, does not limit the present invention.
Shown in reference Fig. 1, a kind of temperature stabilization piezoelectric composite ceramics oscillator that the present invention provides, including piezoelectric ceramics 1, the surface at described piezoelectric ceramics 1 two ends is formed with the first electrode layer 2;Dielectric ceramic 3, is formed with the second electrode lay 4 on the surface at described dielectric ceramic 3 two ends;First exit 5, described first exit 5 is in close contact with described piezoelectric ceramics 1 and the first electrode layer 2 of dielectric ceramic 3 homonymy, the second electrode lay 4;Second exit 6, described second exit 6 is in close contact with described piezoelectric ceramics 1 and the first electrode layer 2 of another homonymy of dielectric ceramic 3, the second electrode lay 4;
More specifically, the temperature coefficient of capacitance of described piezoelectric ceramics, within the temperature coefficient of capacitance of-30 DEG C are-35%, within the temperature coefficient of capacitance of 85 DEG C are+35%, the Capacitance Shift Rate of described piezoelectric ceramics increases with the rising of temperature, described dielectric ceramic is within the temperature coefficient of capacitance of-30 DEG C is 65%, within the temperature coefficient of capacitance of 85 DEG C are-55%, the Capacitance Shift Rate of described dielectric ceramic reduces with the rising of temperature, and described piezoelectric ceramics, dielectric ceramic mutually compensate at the temperature coefficient of capacitance of-30 DEG C ~ 85 DEG C.Described mutually compensating for refers to when piezoelectric ceramics is in a certain temperature of-30 DEG C of-85 DEG C of centres, if its temperature coefficient of capacitance is just at a temperature of Gai, then the temperature coefficient of capacitance of the dielectric ceramic at such a temperature of arranging in pairs or groups is negative dielectric ceramic.
The chemical composition of described piezoelectric ceramics is Pb(ZraTi1-a) O3, wherein 0.45 < a≤0.55, use solid phase method sintering to make.
The chemical composition of described dielectric ceramic is Ba (Ti1-aZr a )O3, wherein 0.1 < a≤0.4, use solid phase method sintering to make.
Described piezoelectric ceramics and/or dielectric ceramic are multi-layer ceramic capacitance composition.
The thickness of described dielectric ceramic is 0.1 ~ 0.9mm, is preferably chosen as 0.4 ~ 0.7mm, and technique and performance can be made all to realize optimization.
Described first electrode layer 2 and the second electrode lay 4 are conductive metal electrode material, are preferably silver or silver/palladium electrode.For in theory, thickness of electrode be there is no concrete restriction, it is preferable that thickness of electrode is 5 μm-30 μm.If this is because thickness of electrode is the thinnest, may result in covering not exclusively, electrode covers uneven problem, if thickness of electrode is the thickest, on the one hand can increase cost, and still further aspect also can reduce the performance of overall piezoelectric ceramic vibrator device.
Described temperature stabilization piezoelectric ceramic vibrator is-3% ~+3% at the Capacitance Shift Rate of-30 DEG C ~+85 DEG C.
Embodiment 1:
It is-34% that piezoelectric ceramics is changed to rate the appearance temperature of-30 DEG C, and being changed to rate the appearance temperature of+85 DEG C is+22%;Dielectric ceramic is 35% at the temperature coefficient of capacitance of-30 DEG C, being changed to rate the appearance temperature of+85 DEG C is-23%, dielectric ceramic thickness is 0.2mm, described piezoelectric ceramics is single-layer ceramic, described dielectric ceramic is single-layer ceramic electric capacity composition, first, second electrode layer is silver electrode, and thickness is 5 microns, makes temperature stabilization piezoelectric composite ceramics oscillator on request.
Embodiment 2:
It is-15% that piezoelectric ceramics is changed to rate the appearance temperature of-30 DEG C, and being changed to rate the appearance temperature of+85 DEG C is+35%;Dielectric ceramic is 55% at the temperature coefficient of capacitance of-30 DEG C, being changed to rate the appearance temperature of+85 DEG C is-65%, dielectric ceramic thickness is 0.1mm, described piezoelectric ceramics is single-layer ceramic, described dielectric ceramic is multi-layer ceramic capacitance composition, first, second electrode layer is silver/palladium electrode, and thickness is 20 microns, makes temperature stabilization piezoelectric composite ceramics oscillator on request.
Embodiment 3:
It is-35% that piezoelectric ceramics is changed to rate the appearance temperature of-30 DEG C, and being changed to rate the appearance temperature of+85 DEG C is+25%;Dielectric ceramic is 15% at the temperature coefficient of capacitance of-30 DEG C, being changed to rate the appearance temperature of+85 DEG C is-10%, dielectric ceramic thickness is 0.6, mm, described piezoelectric ceramics is single-layer ceramic, and described dielectric ceramic is multi-layer ceramic capacitance composition, first electrode layer is silver/palladium electrode, the second electrode lay is silver electrode, and thickness is 10 microns, makes temperature stabilization piezoelectric composite ceramics oscillator on request.
Embodiment 4:
It is-25% that piezoelectric ceramics is changed to rate the appearance temperature of-30 DEG C, and being changed to rate the appearance temperature of+85 DEG C is+25%;Dielectric ceramic is 20% at the temperature coefficient of capacitance of-30 DEG C, being changed to rate the appearance temperature of+85 DEG C is-10%, dielectric ceramic thickness is 0.9mm, described piezoelectric ceramics is single-layer ceramic, described dielectric ceramic is multi-layer ceramic capacitance composition, first, second electrode layer is silver electrode, and thickness is 30 microns, makes temperature stabilization piezoelectric composite ceramics oscillator on request.
Comparative example 1:
It is-25% that piezoelectric ceramics is changed to rate the appearance temperature of-30 DEG C, and being changed to rate the appearance temperature of+85 DEG C is+25%;Dielectric ceramic is 35% at the temperature coefficient of capacitance of-30 DEG C, being changed to rate the appearance temperature of+85 DEG C is-75%, dielectric ceramic thickness is 0.7mm, described piezoelectric ceramics is single-layer ceramic, described dielectric ceramic is single-layer ceramic electric capacity composition, first, second electrode layer is silver electrode, and piezoelectric ceramic thickness is 5 microns, makes temperature stabilization piezoelectric composite ceramics oscillator on request.
Comparative example 2:
Using and the piezoelectric ceramics in embodiment 2 and dielectric ceramic composition, component that content is identical, burning altogether after mix homogeneously, obtain composite piezoelectric ceramic, on request by silver/palladium electrode, electrode layers thickness is 20 microns, makes temperature stabilization piezoelectric composite ceramics oscillator.
Table 1 is embodiment 1-3 and comparative example 1, the performance parameter table of comparative example 2 piezoelectric ceramic vibrator
The performance parameter of piezoelectric ceramic vibrator in table 1 embodiment and comparative example
Within the temperature coefficient of capacitance of the piezoelectric ceramics in embodiment 1-3 and comparative example 1 is ± 35%, as can be seen from Table 1, use the piezoelectric ceramic vibrator minor structure of the present invention, after dielectric ceramic is fixed at its top or bottom, the appearance temperature characteristics of piezoelectric ceramics is significantly improved, and significantly declining does not occurs yet in the performance of piezoelectric ceramics itself.Comparative example 1 be hold the dielectric ceramic that changes greatly of temperature characteristics compound after piezoelectric ceramic vibrator performance parameter, it can be seen that the too high or too low dielectric ceramic of temperature coefficient of capacitance is all unsatisfactory for the requirement in the present invention.Comparative example 2 is the component to form with piezoelectric ceramics in embodiment 2 and dielectric ceramic, content is identical, the composite piezoelectric ceramic fired altogether after mix homogeneously, after making stable piezoelectric composite ceramics oscillator on request detecting its performance, result is as described in comparative example 2 in table 1.Obviously, by being combined between simple component, the technical purpose of the present invention can not be realized.
The present invention is compared to prior art, the approach that ceramic component is modified improving its performance broken traditions, by using novel structure to design, and determine the performance requirement of piezoelectric ceramics and the dielectric ceramic being suitable for the present invention, list a kind of compositional selecting.The piezoelectric ceramic vibrator of this new structure is on the basis of keeping good piezoelectric property, hold temperature coefficient to be greatly improved, it is greatly improved reversing automobile and assists piezoelectric property and the reliability of probe, expand the range of application of product, can be widely applied in the automobile application of higher use environmental requirement.
The present invention, compared to Chinese patent CN201610072538.2, by the thickness that the dielectric ceramic that improved is compound, reduces technology difficulty and defect rate, reduces enterprise's production cost.And also have surprisingly found that, there is not deterioration in the appearance temperature characteristics of the piezoelectric ceramic vibrator entirety that the present invention provides, thus realize that there is in-30 DEG C ~+85 DEG C good appearance temperature variation coefficient, when+85 DEG C, its Capacitance Shift Rate controls+3%, when-30 DEG C, its Capacitance Shift Rate controls the technique effect-3%.
The foregoing is only presently preferred embodiments of the present invention, not in order to limit the present invention, all any amendments done within the spirit and principles in the present invention, equivalent etc., should be included within the scope of the present invention.

Claims (9)

1. a temperature stabilization piezoelectric composite ceramics oscillator, it is characterised in that including:
Piezoelectric ceramics, is formed with the first electrode layer on the surface at described piezoelectric ceramics two ends;
Dielectric ceramic, is formed with the second electrode lay on the surface at described dielectric ceramic two ends;
First exit, described first exit is in close contact with described piezoelectric ceramics and the first electrode layer of dielectric ceramic homonymy, the second electrode lay;
Second exit, described second exit is in close contact with described piezoelectric ceramics and the first electrode layer of another homonymy of dielectric ceramic, the second electrode lay;
Wherein, the temperature coefficient of capacitance of described piezoelectric ceramics, within the temperature coefficient of capacitance of-30 DEG C are-35%, within the temperature coefficient of capacitance of 85 DEG C are+35%, the Capacitance Shift Rate of described piezoelectric ceramics increases with the rising of temperature, described dielectric ceramic is within the temperature coefficient of capacitance of-30 DEG C is+65%, within the temperature coefficient of capacitance of 85 DEG C are-55%, the Capacitance Shift Rate of described dielectric ceramic reduces with the rising of temperature, and described piezoelectric ceramics, dielectric ceramic mutually compensate at the temperature coefficient of capacitance of-30 DEG C ~ 85 DEG C.
A kind of temperature stabilization piezoelectric composite ceramics oscillator the most according to claim 1, it is characterised in that: the chemical composition of described piezoelectric ceramics is Pb(ZraTi1-a) O3, wherein 0.45 < a≤0.55.
A kind of temperature stabilization piezoelectric composite ceramics oscillator the most according to claim 1, it is characterised in that: the chemical composition of described dielectric ceramic is Ba (Ti1-aZra )O3, wherein 0.1 < a≤0.4.
A kind of temperature stabilization piezoelectric composite ceramics oscillator the most according to claim 1, it is characterised in that: the thickness of described dielectric ceramic is 0.1 ~ 0.9mm.
A kind of temperature stabilization piezoelectric composite ceramics oscillator the most according to claim 1, it is characterised in that: the thickness of described dielectric ceramic is 0.4 ~ 0.7mm.
A kind of temperature stabilization piezoelectric composite ceramics oscillator the most according to claim 1, it is characterised in that: described first electrode layer and the second electrode lay are metal electrodes.
A kind of temperature stabilization piezoelectric composite ceramics oscillator the most according to claim 6, it is characterised in that: described metal electrode is the one in silver electrode or silver/palladium electrode.
8. according to a kind of temperature stabilization piezoelectric composite ceramics oscillator described in any one of claim 1-7, it is characterised in that: described piezoelectric ceramics is single-layer ceramic, and dielectric ceramic is single or multiple lift ceramic condenser composition.
A kind of temperature stabilization piezoelectric composite ceramics oscillator the most according to claim 8, it is characterised in that: described temperature stabilization piezoelectric ceramic vibrator is-3% ~+3% at the Capacitance Shift Rate of-30 DEG C ~+85 DEG C.
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JPH0779022A (en) * 1993-09-08 1995-03-20 Unisia Jecs Corp Piezoelectric device
JPH0779023A (en) * 1993-09-08 1995-03-20 Unisia Jecs Corp Piezoelectric device
CN2459760Y (en) * 2000-11-16 2001-11-14 浙江嘉康电子股份有限公司 Ceramic casing chip type piezoelectric element
CN101019247A (en) * 2004-09-13 2007-08-15 株式会社电装 Piezoelectric actuator
CN102904546A (en) * 2012-08-30 2013-01-30 中兴通讯股份有限公司 Piezoelectric acoustic wave resonator with adjustable temperature compensation capability
US20140292152A1 (en) * 2013-04-01 2014-10-02 Cymatics Laboratories Corp. Temperature compensating electrodes

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0779022A (en) * 1993-09-08 1995-03-20 Unisia Jecs Corp Piezoelectric device
JPH0779023A (en) * 1993-09-08 1995-03-20 Unisia Jecs Corp Piezoelectric device
CN2459760Y (en) * 2000-11-16 2001-11-14 浙江嘉康电子股份有限公司 Ceramic casing chip type piezoelectric element
CN101019247A (en) * 2004-09-13 2007-08-15 株式会社电装 Piezoelectric actuator
CN102904546A (en) * 2012-08-30 2013-01-30 中兴通讯股份有限公司 Piezoelectric acoustic wave resonator with adjustable temperature compensation capability
US20140292152A1 (en) * 2013-04-01 2014-10-02 Cymatics Laboratories Corp. Temperature compensating electrodes

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