CN105826442A - GaN material layer surface roughening method - Google Patents
GaN material layer surface roughening method Download PDFInfo
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- CN105826442A CN105826442A CN201610159628.5A CN201610159628A CN105826442A CN 105826442 A CN105826442 A CN 105826442A CN 201610159628 A CN201610159628 A CN 201610159628A CN 105826442 A CN105826442 A CN 105826442A
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- gallium nitride
- roughening
- wafer
- nitride layer
- roughened
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- 238000007788 roughening Methods 0.000 title claims abstract description 38
- 238000000034 method Methods 0.000 title claims abstract description 30
- 239000000463 material Substances 0.000 title claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 25
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims abstract description 21
- 239000003814 drug Substances 0.000 claims abstract description 18
- 239000007788 liquid Substances 0.000 claims abstract description 18
- USHAGKDGDHPEEY-UHFFFAOYSA-L potassium persulfate Chemical compound [K+].[K+].[O-]S(=O)(=O)OOS([O-])(=O)=O USHAGKDGDHPEEY-UHFFFAOYSA-L 0.000 claims abstract description 7
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 54
- 229910002601 GaN Inorganic materials 0.000 claims description 53
- 238000005260 corrosion Methods 0.000 claims description 19
- 230000007797 corrosion Effects 0.000 claims description 18
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 9
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 claims description 6
- 230000033001 locomotion Effects 0.000 claims description 6
- 235000019394 potassium persulphate Nutrition 0.000 claims description 6
- 239000012943 hotmelt Substances 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 3
- 238000010030 laminating Methods 0.000 claims description 3
- 239000011780 sodium chloride Substances 0.000 claims description 3
- 229910021642 ultra pure water Inorganic materials 0.000 claims description 3
- 239000012498 ultrapure water Substances 0.000 claims description 3
- 230000000694 effects Effects 0.000 description 9
- 239000013078 crystal Substances 0.000 description 8
- 238000005530 etching Methods 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 6
- JRKICGRDRMAZLK-UHFFFAOYSA-L peroxydisulfate Chemical compound [O-]S(=O)(=O)OOS([O-])(=O)=O JRKICGRDRMAZLK-UHFFFAOYSA-L 0.000 description 6
- 230000004913 activation Effects 0.000 description 4
- 238000000605 extraction Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 1
- 230000002427 irreversible effect Effects 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
- H01L21/30612—Etching of AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- High Energy & Nuclear Physics (AREA)
- General Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Weting (AREA)
- Led Devices (AREA)
Abstract
The invention provides a GaN material layer surface roughening method, which comprises steps: a to-be-roughened wafer is provided; one side, away from a substrate, of the wafer is fixed in a corrosion-resisting high temperature-resisting ware; roughening liquid medicine is added to the corrosion-resisting high temperature-resisting ware to soak a second GaN layer surface, wherein the roughening liquid medicine at least comprises potassium persulfate and potassium hydroxide; and an ultraviolet laser generator is adopted to roughen the second GaN layer to enable the GaN surface to acquire good roughness and roughening uniformity. Thus, the roughening speed, the desmutting efficiency and the product yield are improved.
Description
Technical field
The present invention relates to technical field of semiconductors, more particularly, it relates to a kind of method of gallium nitride material layer surface coarsening.
Background technology
Light emitting diode (LED) has efficiency height, life-span length, the feature such as pollution-free, to be widely used in multiple field, as the illuminating device of a new generation.But, the refractive index of Group III-V semiconductor is the highest, and the light major part that the luminous zone of LED sends is reflected back toward LED internal two in interface generation total reflection and is depleted, and the most least a portion of light can shine outside LED.Interface total reflection phenomenon causes the external quantum efficiency of LED lowly, is the main cause of the restriction LED existing illuminating device of replacement.
In order to improve light extraction efficiency, surface texture technology is in industry widely used as a kind of simple effective method.But owing to LED surface is the high growth temperature crystal that GaN is constituted, there is the highest hardness and superior anti-corrosion performance, the physical roughening technology of traditional industry is not suitable for processing such material, and research finds that gallium nitride (GaN) crystal can be effectively etched by plasma and chemical method for etching in the industry.Plasma is fast to GaN crystal etching speed, etch capabilities is strong, but plane of crystal can be produced irreversible damage, inappropriate technology is easily caused crystal and the defect of electric property occurs, eventually result in chip to burn out and scrap, there is not damage in chemical method for etching, shortcoming is that etching speed is slow, owing to process time length causes configuration of surface to be not easily controlled to plane of crystal.
Summary of the invention
In view of this, the present invention provides a kind of method of gallium nitride material layer surface coarsening, with the problem solving that gallium nitride material layer surface coarsening in prior art is of poor quality, speed is slow etc..
For achieving the above object, the technical scheme that the present invention provides is as follows:
A kind of method of gallium nitride material layer surface coarsening, it is characterised in that including:
Wafer to be roughened, described wafer is provided to include substrate, the first gallium nitride layer being positioned at substrate any surface, be positioned at the active layer of the first gallium nitride layer away from substrate side and be positioned at the second gallium nitride layer of active layer away from substrate side；
Described wafer away from substrate side is fixed in corrosion-resistant and high-temperature resistant vessel；
Adding roughening liquid medicine in described corrosion-resistant and high-temperature resistant vessel to be soaked on the second gallium nitride layer surface, roughening liquid medicine at least includes potassium peroxydisulfate and potassium hydroxide；
Use uv laser generator that described second gallium nitride layer is roughened.
Preferably, the wave-length coverage of the Ultra-Violet Laser that described uv laser generator is launched is 248 ~ 400nm.
Preferably, described roughening liquid medicine can also include one or more in sodium hydroxide, sodium chloride and ultra-pure water.
Preferably, described corrosion-resistant and high-temperature resistant vessel are glass dish or pottery ware.
Preferably, by bonding mode, wafer away from substrate side is fixed on bottom corrosion-resistant and high-temperature resistant vessel；Wherein, the hot melt binding material that bonding mode uses is laminating wax.
Preferably, before using uv laser generator that described second gallium nitride layer is roughened, also include:
The output of regulation uv laser generator and facula area, the area being accurately controlled roughening with this and the degree of depth.
Preferably, before using uv laser generator that described second gallium nitride layer is roughened, also include:
Adjust the mode of the working table movement of described uv laser generator, so that described workbench moves in the same direction.
Preferably, after described wafer is roughened, also include:
Take out described wafer and be carried out.
Preferably, described method is applicable to the LED chip of formal dress, upside-down mounting and vertical process and the roughening of epitaxial wafer.
Compared with prior art, technical scheme provided by the present invention has the advantage that
The method of gallium nitride material layer surface coarsening provided by the present invention, initially with the roughening liquid medicine containing potassium peroxydisulfate and potassium hydroxide, gallium nitride surface is soaked, then use Ultra-Violet Laser that gallium nitride surface is irradiated, persulfate ion activation in roughening liquid medicine is formed activity persulfate ion by Ultra-Violet Laser, and hydroxide ion activation is formed activity hydroxide ion by the persulfate ion of activity.Activity hydroxide ion can carry out fast-etching to gallium nitride, thus improves the speed of roughening.Additionally, by the output and the facula area of Ultra-Violet Laser that adjust uv laser generator, area and the degree of depth of roughening can be accurately controlled, so that gallium nitride surface obtains good roughness and roughening uniformity, improve light extraction efficiency and the yield of product.
Accompanying drawing explanation
The flow chart of the gallium nitride material layer surface coarsening that Fig. 1 provides for the embodiment of the present invention；
The process chart of the gallium nitride material layer surface coarsening that Fig. 2 a-2d provides for the embodiment of the present invention.
Detailed description of the invention
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is clearly and completely described, it is clear that described embodiment is only a part of embodiment of the present invention rather than whole embodiments.Based on the embodiment in the present invention, the every other embodiment that those of ordinary skill in the art are obtained under not making creative work premise, broadly fall into the scope of protection of the invention.
A kind of method that the invention provides gallium nitride material layer surface coarsening, the flow chart of method is as it is shown in figure 1, include:
S1, provide wafer to be roughened.
With reference to shown in Fig. 1 a, it is provided that wafer 100 to be roughened, wafer includes:
Substrate 101；
Wherein, the substrate that the embodiment of the present application provides is Sapphire Substrate；In addition to above-mentioned material substrate, in other embodiments of the application, substrate can also be other materials, is not particularly limited this application.
It is positioned at the first gallium nitride layer 102 of substrate any surface, is positioned at the active layer 103 of the first gallium nitride layer away from substrate side and is positioned at the second gallium nitride layer 104 of active layer away from substrate side.First gallium nitride layer can be n type gallium nitride layer, then the second gallium nitride layer is p-type gallium nitride layer；Or, the first gallium nitride layer is p-type gallium nitride layer, and the second gallium nitride layer is N-type half gallium nitride layer.
It should be noted that the embodiment of the present application is not particularly limited for the conduction type of the first gallium nitride layer and the second gallium nitride layer, need to be designed according to reality application.
S2, wafer away from substrate side is fixed in corrosion-resistant and high-temperature resistant vessel.
With reference to shown in Fig. 2 b, wafer 100 away from substrate 101 side is fixed in corrosion-resistant and high-temperature resistant vessel 200.Concrete, wafer away from substrate side is fixed on corrosion-resistant and high-temperature resistant vessel and includes:
By bonding mode, wafer away from substrate side is fixed bottom corrosion-resistant and high-temperature resistant vessel.Wherein, the hot melt binding material that bonding mode uses is laminating wax.
It addition, the corrosion-resistant and high-temperature resistant vessel that the embodiment of the present application provides are the corrosion-resistant and high-temperature resistant vessel such as glass dish, pottery ware.
S3, in corrosion-resistant and high-temperature resistant vessel add roughening liquid medicine the second gallium nitride layer surface is soaked, be roughened liquid medicine at least include potassium peroxydisulfate and potassium hydroxide.
With reference to shown in Fig. 2 c, adding roughening liquid medicine 300 and soaked on the second gallium nitride layer 104 surface in corrosion-resistant and high-temperature resistant vessel 200, roughening liquid medicine 300 at least includes potassium peroxydisulfate and potassium hydroxide.
Specifically, roughening liquid medicine 300 can also include: one or more in sodium hydroxide, sodium chloride and ultra-pure water.
Described second gallium nitride layer is roughened by S4, employing uv laser generator.
With reference to shown in Fig. 2 d, corrosion-resistant and high-temperature resistant vessel 200 are placed under the Ultra-Violet Laser that uv laser generator 400 is launched and are roughened.
Concrete, before being roughened, need the size according to wafer, the thickness of the second gallium nitride layer, doping content to regulate the wavelength of Ultra-Violet Laser.Preferably, Ultra-Violet Laser wave-length coverage is 248 ~ 400nm.If the wavelength of Ultra-Violet Laser is less than 248nm, the too high Ultra-Violet Laser of relative energy can make the second gallium nitride layer Direct Resolution, does not reaches roughening effect.
In addition, also need to regulate output and the facula area of uv laser generator, the area being accurately controlled roughening with this and the degree of depth, so that crystal column surface obtains good roughness and roughening uniformity, improve light extraction efficiency.
Additionally, also need to adjust the mode of the working table movement of described uv laser generator, so that described workbench moves in the same direction.Workbench in the present embodiment can move to subsequent region and carry out surface coarsening until being fully completed after region a part of to crystal column surface be roughened.Certainly the present invention is not limited to this, the motion mode of workbench is in addition to the motion the most all kept from top to bottom described herein, can also keep from the beginning to the end moving from the bottom up, additionally can also the circular pattern motion outward outside in or from center.
After roughening, also include:
S5, take out described wafer and be carried out.
Remove the roughening liquid medicine in described corrosion-resistant and high-temperature resistant vessel, then heat bottom vessel, after described hot melt binding material dissolves, take out and be roughened wafer, and with organic solvent, wafer is carried out.
The method of roughening of the present invention, it is adaptable to the LED chip of formal dress, upside-down mounting and vertical process and the roughening of epitaxial wafer.
The method of the gallium nitride material layer surface coarsening that the present embodiment provides, initially with the roughening liquid medicine containing potassium peroxydisulfate and potassium hydroxide, gallium nitride surface is soaked, then use Ultra-Violet Laser that gallium nitride surface is irradiated, persulfate ion activation in roughening liquid medicine is formed activity persulfate ion by Ultra-Violet Laser, and hydroxide ion activation is formed activity hydroxide ion by the persulfate ion of activity.Activity hydroxide ion can carry out fast-etching to gallium nitride, thus improves the speed of roughening.Additionally, by the output and the facula area of Ultra-Violet Laser that adjust uv laser generator, area and the degree of depth of roughening can be accurately controlled, so that gallium nitride surface obtains good roughness and roughening uniformity, improve light extraction efficiency and the yield of product.
Claims (9)
1. the method for a gallium nitride material layer surface coarsening, it is characterised in that including:
Wafer to be roughened, described wafer is provided to include substrate, the first gallium nitride layer being positioned at substrate any surface, be positioned at the active layer of the first gallium nitride layer away from substrate side and be positioned at the second gallium nitride layer of active layer away from substrate side；
Described wafer away from substrate side is fixed in corrosion-resistant and high-temperature resistant vessel；
Adding roughening liquid medicine in described corrosion-resistant and high-temperature resistant vessel to be soaked on the second gallium nitride layer surface, roughening liquid medicine at least includes potassium peroxydisulfate and potassium hydroxide；
Use uv laser generator that described second gallium nitride layer is roughened.
Method the most according to claim 1, it is characterised in that the wave-length coverage of the Ultra-Violet Laser that described uv laser generator is launched is 248 ~ 400nm.
Method the most according to claim 1, it is characterised in that described roughening liquid medicine can also include one or more in sodium hydroxide, sodium chloride and ultra-pure water.
Method the most according to claim 1, it is characterised in that described corrosion-resistant and high-temperature resistant vessel are glass dish or pottery ware.
Method the most according to claim 1, it is characterised in that wafer away from substrate side is fixed on bottom corrosion-resistant and high-temperature resistant vessel by bonding mode；
Wherein, the hot melt binding material that bonding mode uses is laminating wax.
Method the most according to claim 1, it is characterised in that before using uv laser generator that described second gallium nitride layer is roughened, also include:
The output of regulation uv laser generator and facula area, the area being accurately controlled roughening with this and the degree of depth.
Method the most according to claim 6, it is characterised in that before using uv laser generator that described second gallium nitride layer is roughened, also include:
Adjust the mode of the working table movement of described uv laser generator, so that described workbench moves in the same direction.
Method the most according to claim 1, it is characterised in that after described wafer is roughened, also include:
Take out described wafer and be carried out.
9. according to described method arbitrary in claim 1-8, it is characterised in that described method is applicable to the LED chip of formal dress, upside-down mounting and vertical process and the roughening of epitaxial wafer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610159628.5A CN105826442A (en) | 2016-03-21 | 2016-03-21 | GaN material layer surface roughening method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610159628.5A CN105826442A (en) | 2016-03-21 | 2016-03-21 | GaN material layer surface roughening method |
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| CN105826442A true CN105826442A (en) | 2016-08-03 |
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| CN201610159628.5A Pending CN105826442A (en) | 2016-03-21 | 2016-03-21 | GaN material layer surface roughening method |
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060202223A1 (en) * | 2005-03-09 | 2006-09-14 | Gelcore Llc | Increased light extraction from a nitride led |
| US20100059779A1 (en) * | 2008-09-10 | 2010-03-11 | Ding-Yuan Chen | Light-Emitting Diode with Embedded Elements |
| CN102169930A (en) * | 2011-03-07 | 2011-08-31 | 山东大学 | Method for coarsening surface of light-emitting diode (LED) with the aid of metal nanoparticles |
| CN102255010A (en) * | 2011-07-13 | 2011-11-23 | 厦门市三安光电科技有限公司 | Manufacturing method of gallium nitride light-emitting diode |
| CN102280536A (en) * | 2011-08-02 | 2011-12-14 | 山东大学 | Coarsening method of wet method of gallium phosphide window layer of photo-assisted red light LED |
| CN102856172A (en) * | 2012-08-31 | 2013-01-02 | 南京大学 | Method for preparing low-stress GaN film |
| CN103545403A (en) * | 2012-07-11 | 2014-01-29 | 山东华光光电子有限公司 | Photo-assisted LED wet coarsening equipment |
-
2016
- 2016-03-21 CN CN201610159628.5A patent/CN105826442A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060202223A1 (en) * | 2005-03-09 | 2006-09-14 | Gelcore Llc | Increased light extraction from a nitride led |
| US20100059779A1 (en) * | 2008-09-10 | 2010-03-11 | Ding-Yuan Chen | Light-Emitting Diode with Embedded Elements |
| CN102169930A (en) * | 2011-03-07 | 2011-08-31 | 山东大学 | Method for coarsening surface of light-emitting diode (LED) with the aid of metal nanoparticles |
| CN102255010A (en) * | 2011-07-13 | 2011-11-23 | 厦门市三安光电科技有限公司 | Manufacturing method of gallium nitride light-emitting diode |
| CN102280536A (en) * | 2011-08-02 | 2011-12-14 | 山东大学 | Coarsening method of wet method of gallium phosphide window layer of photo-assisted red light LED |
| CN103545403A (en) * | 2012-07-11 | 2014-01-29 | 山东华光光电子有限公司 | Photo-assisted LED wet coarsening equipment |
| CN102856172A (en) * | 2012-08-31 | 2013-01-02 | 南京大学 | Method for preparing low-stress GaN film |
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Application publication date: 20160803 |