CN105825879B - The domain of domain of sense amplifier and forming method thereof, memory - Google Patents
The domain of domain of sense amplifier and forming method thereof, memory Download PDFInfo
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- CN105825879B CN105825879B CN201510011857.8A CN201510011857A CN105825879B CN 105825879 B CN105825879 B CN 105825879B CN 201510011857 A CN201510011857 A CN 201510011857A CN 105825879 B CN105825879 B CN 105825879B
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- grizzly bar
- connection hole
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Abstract
The domain of a kind of domain of sense amplifier and forming method thereof, memory, the domain forming method of the sense amplifier include：The domain for providing storage unit removes the second connection hole pattern and the 9th connection hole pattern in the domain of the storage unit；Extend first metallic pattern in a second direction to connecting second metallic pattern；Extend the 8th metallic pattern in a second direction to connecting the 6th metallic pattern.
Description
Technical field
The present invention relates to a kind of domain of sense amplifier and forming method thereof, the domains of memory.
Background technology
As microprocessor design field scale is increasing, memory area occupies most of area of entire chip, and
And with the development of technique, the content of memory in the chips can be more and more, therefore designing highdensity memory can be
The area for reducing chip to a certain extent, so as to reduce cost.Memory generally includes the storage being made of storage unit
Array, address decoder, read-write control circuit and sense amplifier, sense amplifier connect storage unit.
Existing storage unit domain and sense amplifier domain are formed based on different rules, general sensitive amplification
Design rule of the device domain based on logic, and storage unit is based on special design rule.However, being based on logic
The sense amplifier area that is formed of design rule it is larger.
Invention content
Problems solved by the invention is that the sense amplifier size that is formed based on existing sense amplifier domain is larger.
To solve the above problems, the present invention provides a kind of domain forming method of sense amplifier, including：
The domain of the first storage unit is provided, the domain of first storage unit includes：First grizzly bar figure, second gate
Article figure, third grizzly bar figure, the 4th grizzly bar figure, the first active area figure, the second active area figure, third active area figure
Shape, the 4th active area figure, the first connection hole pattern, the second connection hole pattern, third connection hole pattern, the 4th connection hole pattern
Shape, the 5th connection hole pattern, the 6th connection hole pattern, the 7th connection hole pattern, the 8th connection hole pattern, the 9th connection hole pattern
Shape, the tenth connection hole pattern, the 11st connection hole pattern, the 12nd connection hole pattern, the 13rd connection hole pattern, the 14th connect
Connect hole pattern, the first metallic pattern, the second metallic pattern, third metallic pattern, the 4th metallic pattern, fifth metal figure,
Six metallic patterns, the 7th metallic pattern, the 8th metallic pattern, the 9th metallic pattern and the tenth metallic pattern；
The first grizzly bar figure and third grizzly bar figure are spaced setting, the second grizzly bar figure along first direction successively
It is spaced setting successively along the first direction with the 4th grizzly bar figure；The first grizzly bar figure and the second grizzly bar figure are along second
Direction is spaced setting successively, and the third grizzly bar figure and the 4th grizzly bar figure are spaced setting successively along the second direction；Institute
The first active area figure, the second active area figure, third active area figure and the 4th active area figure are stated along the first direction
Interval setting successively；
The first active area figure and the first grizzly bar figure and the second grizzly bar figure are overlapping, first connecting hole
Figure is located in the first active area figure of the first side of the first grizzly bar figure, and the second connecting hole figure is located at described the
In the first active area figure between one grizzly bar figure the second side and second the first side of grizzly bar figure, the third connects hole pattern
In the first active area figure of the second grizzly bar figure the second side；
The second active area figure and the second grizzly bar figure are overlapping, and the 4th connecting hole figure is located at described the
In second active area figure of two the first sides of grizzly bar figure, the 5th connecting hole figure is located at the second grizzly bar figure second
In second active area figure of side；
The third active area figure is overlapping with third grizzly bar figure, and the 6th connecting hole figure is located at the third grid
In the third active area figure of the first side of figure, the 7th connecting hole figure is located at the third grizzly bar figure the second side
In third active area figure；
The 4th active area figure and third grizzly bar figure and the 4th grizzly bar figure are overlapping, the 8th connection hole pattern
In the 4th active area figure of the first side of the third grizzly bar figure, the 9th connecting hole figure is located at the third grid
In the 4th active area figure article between figure the second side and the 4th the first side of grizzly bar figure, the tenth connecting hole figure is located at
In 4th active area figure of the 4th grizzly bar figure the second side；First grizzly bar figure, the second grizzly bar figure, third grizzly bar figure
The first side and the second side of shape and the 4th grizzly bar figure are both sides opposite in a second direction；
The 11st connecting hole figure is between the first active area figure the second side and third active area figure
Third grizzly bar figure in, the 12nd connecting hole figure is located at the second active area figure and the 4th the first side of active area figure
Between the second grizzly bar figure in, the 13rd connecting hole figure is located at the first grizzly bar figure of first the first side of active area figure
Interior, the 14th connecting hole figure is located in the 4th grizzly bar figure of the 4th active area figure the second side；The first active area figure
The first side and the second side of shape and the 4th active area figure are both sides opposite in a first direction；
First metallic pattern covering the first connection hole pattern, the second metallic pattern cover second connecting hole
Figure, the 4th connection hole pattern and the 11st connection hole pattern, the third metallic pattern covering third connection hole pattern, the 4th
Metallic pattern covering the 5th connection hole pattern, fifth metal figure covering the 6th connection hole pattern, the 6th metal figure
Shape covering the 7th connection hole pattern, the 9th connection hole pattern and the 12nd connection hole pattern, the 7th metallic pattern cover institute
State the 8th connection hole pattern, the 8th metallic pattern covering the tenth connection hole pattern, the 9th metallic pattern covering the described tenth
Three connection hole patterns, the tenth metallic pattern covering the 14th connection hole pattern；
Remove the second connection hole pattern and the 9th connection hole pattern in the domain of the storage unit；
Extend first metallic pattern in a second direction to connecting second metallic pattern；
Extend the 8th metallic pattern in a second direction to connecting the 6th metallic pattern.
The present invention also provides a kind of domains of sense amplifier, including：First grizzly bar figure, the second grizzly bar figure, third
Grizzly bar figure, the 4th grizzly bar figure, the first active area figure, the second active area figure, third active area figure, the 4th active area
Figure, the first connection hole pattern, third connection hole pattern, the 4th connection hole pattern, the 5th connection hole pattern, the 6th connection hole pattern
Shape, the 7th connection hole pattern, the 8th connection hole pattern, the tenth connection hole pattern, the 11st connection hole pattern, the 12nd connecting hole
Figure, the 13rd connection hole pattern, the 14th connection hole pattern, the first metallic pattern, the second metallic pattern, third metal figure
Shape, the 4th metallic pattern, fifth metal figure, the 6th metallic pattern, the 7th metallic pattern, the 8th metallic pattern, the 9th metal
Figure and the tenth metallic pattern；
The first grizzly bar figure and third grizzly bar figure are spaced setting, the second grizzly bar figure along first direction successively
It is spaced setting successively along the first direction with the 4th grizzly bar figure；The first grizzly bar figure and the second grizzly bar figure are along second
Direction is spaced setting successively, and the third grizzly bar figure and the 4th grizzly bar figure are spaced setting successively along the second direction；Institute
The first active area figure, the second active area figure, third active area figure and the 4th active area figure are stated along the first direction
Interval setting successively；
The first active area figure and the first grizzly bar figure and the second grizzly bar figure are overlapping, first connecting hole
Figure is located in the first active area figure of the first side of the first grizzly bar figure, and the third connecting hole figure is located at described the
In first active area figure of two grizzly bar figure the second sides, the first grizzly bar figure and the second grizzly bar pattern bit are in described first
It connects between hole pattern and third connection hole pattern；
The second active area figure and the second grizzly bar figure are overlapping, and the 4th connecting hole figure is located at described the
In second active area figure of two the first sides of grizzly bar figure, the 5th connecting hole figure is located at the second grizzly bar figure second
In second active area figure of side；
The third active area figure is overlapping with third grizzly bar figure, and the 6th connecting hole figure is located at the third grid
In the third active area figure of the first side of figure, the 7th connecting hole figure is located at the third grizzly bar figure the second side
In third active area figure；
The 4th active area figure and third grizzly bar figure and the 4th grizzly bar figure are overlapping, the 8th connection hole pattern
In the 4th active area figure of the first side of the third grizzly bar figure, the tenth connecting hole figure is located at the 4th grid
In 4th active area figure of article figure the second side, the third grizzly bar figure and the 4th grizzly bar figure are located at the described 8th and connect
Between hole pattern and the tenth connection hole pattern；First grizzly bar figure, the second grizzly bar figure, third grizzly bar figure and the 4th grizzly bar figure
First side of shape and the second side are both sides opposite in a second direction；
The 11st connecting hole figure is between the first active area figure the second side and third active area figure
Third grizzly bar figure in, the 12nd connecting hole figure is located at the second active area figure and the 4th the first side of active area figure
Between the second grizzly bar figure in, the 13rd connecting hole figure is located at the first grizzly bar figure of first the first side of active area figure
Interior, the 14th connecting hole figure is located in the 4th grizzly bar figure of the 4th active area figure the second side；The first active area figure
The first side and the second side of shape and the 4th active area figure are both sides opposite in a first direction；
First metallic pattern covering the first connection hole pattern, the second metallic pattern cover the 4th connecting hole
Figure and the 11st connection hole pattern, third metallic pattern cover the third and connect hole pattern, and the 4th metallic pattern covers institute
State the 5th connection hole pattern, fifth metal figure covering the 6th connection hole pattern, the 6th metallic pattern covering the described 7th
Connect hole pattern and the 12nd connection hole pattern, the 7th metallic pattern covering the 8th connection hole pattern, the 8th metallic pattern
Cover the tenth connection hole pattern, the 9th metallic pattern covering the 13rd connection hole pattern, the covering of the tenth metallic pattern
The 14th connection hole pattern；
Wherein, first metallic pattern is connect with second metallic pattern, the 8th metallic pattern and the 6th gold medal
Belong to figure connection.
The present invention also provides a kind of domains of memory, including：
The domain of above-mentioned sense amplifier；
The domain of the domain of storage unit, the storage unit includes third edge line, and the third edge line is suitable
It is overlapped with the domain of the domain and sense amplifier that splice the storage unit in the first edge straight line.
The present invention also provides a kind of domains of memory, including：
The domain of above-mentioned sense amplifier；
The domain of the domain of storage unit, the storage unit includes the 4th edge line, and the 4th edge line is suitable
It is overlapped with the domain of the domain and sense amplifier that splice the storage unit in the second edge straight line.
Compared with prior art, the domain for the sense amplifier that technical solution of the present invention provides, is the version in storage unit
It is obtained on the basis of figure, so the domain of sense amplifier is identical as the layout design rules of storage unit, simplifies domain shape
At method, substantially reduce the size of sense amplifier, also, the domain of sense amplifier can be with the domain of storage unit
Direct splicing is to realize that sense amplifier is connected with the circuit of storage unit.
Description of the drawings
Fig. 1 is a kind of storage unit schematic diagram of existing 6T structures；
Fig. 2 is the domain of storage unit shown in Fig. 1；
Fig. 3 is the domain of sense amplifier of the present invention；
Fig. 4 is the circuit diagram of sense amplifier shown in Fig. 3；
Fig. 5 is the circuit connection diagram of sense amplifier and storage unit；
Fig. 6 is the splicing domain of sense amplifier and storage unit.
Specific implementation mode
To make the above purposes, features and advantages of the invention more obvious and understandable, below in conjunction with the accompanying drawings to the present invention
Specific embodiment be described in detail.
Fig. 1 is a kind of storage unit schematic diagram of existing 6T structures, and the storage unit includes：First metal-oxide-semiconductor MOS1,
Two metal-oxide-semiconductor MOS2, third metal-oxide-semiconductor MOS3, the 4th metal-oxide-semiconductor MOS4, the 5th metal-oxide-semiconductor MOS5 and the 6th metal-oxide-semiconductor MOS6.
The source electrode of third metal-oxide-semiconductor MOS3 and the source electrode of the 4th metal-oxide-semiconductor MOS4 are all connected with power cord VDD.First metal-oxide-semiconductor MOS1
Source electrode and the source electrode of the second metal-oxide-semiconductor MOS2 be all connected with ground wire VSS.
The drain electrode of the source electrode, the first metal-oxide-semiconductor MOS1 of the 5th metal-oxide-semiconductor MOS5 of drain electrode connection of third metal-oxide-semiconductor MOS3, the 4th
The grid of the grid of metal-oxide-semiconductor MOS4 and the second metal-oxide-semiconductor MOS2.The source of the 6th metal-oxide-semiconductor MOS6 of drain electrode connection of 4th metal-oxide-semiconductor MOS4
Pole, the drain electrode of the second metal-oxide-semiconductor MOS2, the grid of third metal-oxide-semiconductor MOS3 and the first metal-oxide-semiconductor MOS1 grid.
The grid of 5th metal-oxide-semiconductor MOS5 and the 6th metal-oxide-semiconductor MOS6 is all connected with wordline WL.The drain electrode of 5th metal-oxide-semiconductor MOS5 connects
The drain electrode for meeting the first bit line BL, the 6th metal-oxide-semiconductor MOS6 connects the second bit line BLX.
Fig. 2 is the domain of storage unit shown in Fig. 1, and the domain of the storage unit includes：First grizzly bar figure G1, second
Grizzly bar figure G2, third grizzly bar figure G3, the 4th grizzly bar figure G4, the first active area figure A1, the second active area figure A2,
Three active area figure A3, the 4th active area figure A4, the first connection hole pattern CT1, the second connection hole pattern CT2, third connection
Hole pattern CT3, the 4th connection hole pattern CT4, the 5th connection hole pattern CT5, the 6th connection hole pattern CT6, the 7th connection hole pattern
Shape CT7, the 8th connection hole pattern CT8, the 9th connection hole pattern CT9, the tenth connection hole pattern CT10, the 11st connection hole pattern
CT11, the 12nd connection hole pattern CT12, the 13rd connection hole pattern CT13, the 14th connection hole pattern CT14, the first metal
Figure M1, the second metallic pattern M2, third metallic pattern M3, the 4th metallic pattern M4, fifth metal figure M5, the 6th metal figure
Shape M6, the 7th metallic pattern M7, the 8th metallic pattern M8, the 9th metallic pattern M9 and the tenth metallic pattern M10.
The first grizzly bar figure G1 and third grizzly bar figure G3 is spaced setting, second grizzly bar along first direction successively
Figure G2 and the 4th grizzly bar figure G4 are spaced setting along first direction successively.The first grizzly bar figure G1 and the second grizzly bar figure
G2 interval settings successively in a second direction, interval is set successively in a second direction by third grizzly bar figure G3 and the 4th grizzly bar figure G4
It sets.
First active area figure A1, the second active area figure A2, third active area figure A3 and the 4th active area figure A4
It is spaced setting successively along first direction.The first direction and second direction can be orthogonal both direction.Described
Indicate do not have connection or overlapping relation mutually every setting.
First active area figure A1 and the first grizzly bar figure G1 and the second grizzly bar figure G2 is overlapping.First connection hole pattern
Shape CT1 is located in the first active area figure A1 of the first sides the first grizzly bar figure G1.Second connection hole pattern CT2 is located at the
In the first active area figure A1 between one grizzly bar figure G1 the second sides and the second the first sides grizzly bar figure G2.Third connects hole pattern
Shape CT3 is located in the first active area figure A1 of the second grizzly bar figure G2 the second sides.
Second active area figure A2 and the second grizzly bar figure G2 is overlapping.4th connection hole pattern CT4 is located at the second gate
In second active area figure A2 of the first sides figure G2.5th connection hole pattern CT5 is located at the second grizzly bar figure G2 the
In second active area figure A2 of two sides.
Third active area figure A3 and third grizzly bar figure G3 is overlapping.6th connection hole pattern CT6 is located at the third grid
In the third active area figure A3 of the first sides figure G3.7th connection hole pattern CT7 is located at the third grizzly bar figure G3 the
In the third active area figure A3 of two sides.
4th active area figure A4 and third grizzly bar figure G3 and the 4th grizzly bar figure G4 is overlapping.8th connection hole pattern
CT8 is located in the 4th active area figure A4 of the first sides the third grizzly bar figure G3.9th connection hole pattern CT9 is located at third
In the 4th active area figure A4 between grizzly bar figure G3 the second sides and the 4th the first sides grizzly bar figure G4, the tenth connection hole pattern
CT10 is located in the 4th active area figure A4 of the 4th grizzly bar figure G4 the second sides.The first grizzly bar figure G1, the second grizzly bar
Figure G2, the first side of third grizzly bar figure G3 and the 4th grizzly bar figure G4 and the second side are in a second direction opposite two
Side.
11st connection hole pattern CT11 is located at the first active area figure A1 the second sides and third active area figure A3
Between third grizzly bar figure G3 in.It is active that 12nd connection hole pattern CT12 is located at the second active area figure A2 and the 4th
In the second grizzly bar figure G2 between area the first sides figure A4.13rd connection hole pattern CT13 is located at the first active area figure A1
In first grizzly bar figure G1 of the first side.14th connection hole pattern CT14 is located at the 4th of the 4th active area figure A4 the second sides
In grizzly bar figure G4.The first side and the second side of the first active area figure A1 and the 4th active area figure A4 are in first party
Opposite both sides upwards.
First metallic pattern M1 coverings the first connection hole pattern CT1.Second metallic pattern M2 coverings described second connect
Meet hole pattern CT2, the 4th connection hole pattern CT4 and the 11st connection hole pattern CT11.
Third metallic pattern M3 covers the third connection hole pattern CT3.4th metallic pattern M4 coverings the described 5th connect
Meet hole pattern CT5.Fifth metal figure M5 coverings the 6th connection hole pattern CT6.
6th metallic pattern M6 coverings the 7th connection hole pattern CT7, the 9th connection hole pattern CT9 and the 12nd connection
Hole pattern CT12.7th metallic pattern M7 coverings the 8th connection hole pattern CT8.8th metallic pattern M8 coverings the described tenth
Connect hole pattern CT10.9th metallic pattern M9 coverings the 13rd connection hole pattern CT13.Tenth metallic pattern M10 coverings
The 14th connection hole pattern CT14.
In the present embodiment, the grid of grizzly bar graphical representation metal-oxide-semiconductor, the source that active area graphical representation ion doped region is formed
Pole or drain electrode, the connecting hole that connecting hole graphical representation is filled for conductive material, metallic pattern indicate conductive metal layer.
Corresponding storage unit circuit figure shown in FIG. 1, the first grizzly bar figure G1 in storage unit domain and along second party
The 5th metal-oxide-semiconductor MOS5 is constituted to the first active area figure A1 positioned at its both sides.Second grizzly bar figure G2 and in a second direction
The first active area figure A1 positioned at its both sides constitutes the first metal-oxide-semiconductor MOS1.Second grizzly bar figure G2 and in a second direction position
The second active area figure A2 in its both sides constitutes third metal-oxide-semiconductor MOS3.Third grizzly bar figure G3 and it is located in a second direction
The third active area figure A3 of its both sides constitutes the 4th metal-oxide-semiconductor MOS4.Third grizzly bar figure G3 and in a second direction be located at its
4th active area figure A4 of both sides constitutes the second metal-oxide-semiconductor MOS2.4th grizzly bar figure G4 and in a second direction be located at its two
4th active area figure A4 of side constitutes the 6th metal-oxide-semiconductor MOS6.
First metallic pattern M1 indicates that the first bit line BL, the first connection hole pattern CT1 is suitable for making the leakage of the 5th metal-oxide-semiconductor MOS5
Pole connects the first bit line BL.9th metallic pattern M9 and the tenth metallic pattern M10 indicates wordline WL, the 13rd connection hole pattern
The connection hole patterns of CT13 and the 14th CT14 is suitable for that the grid of the 5th metal-oxide-semiconductor MOS5 and the grid of the 6th metal-oxide-semiconductor MOS6 is made to connect
Meet wordline WL.4th metallic pattern M4 and fifth metal figure M5 indicates power cord VDD, the 5th connection hole pattern CT5 and the
Six connection hole pattern CT6 are suitable for making the source electrode of third metal-oxide-semiconductor MOS3 and the 4th metal-oxide-semiconductor MOS4 connection power cord VDD.Third metal
Figure M3 and the 7th metallic pattern M7 indicates that ground wire VSS, the third connections of connection hole pattern CT3 and the 8th hole pattern CT8 are suitable for
Make the source electrode of the first metal-oxide-semiconductor MOS1 and the second metal-oxide-semiconductor MOS2 connection ground wire VSS.
Second metallic pattern M2 coverings the second connection hole pattern CT2, the 4th connection hole pattern CT4 and the 11st connection
Hole pattern CT11 so that the drain electrode of the first metal-oxide-semiconductor MOS1, the source electrode of the 5th metal-oxide-semiconductor MOS5, the drain electrode of third metal-oxide-semiconductor MOS3,
The grid of two metal-oxide-semiconductor MOS2 and the grid of the 4th metal-oxide-semiconductor MOS4 link together.
The 7th connection hole pattern CT7 of 6th metallic pattern M6 coverings, the 9th connection hole pattern CT9 and the 12nd connection hole pattern
Shape CT12 so that the drain electrode of the 4th metal-oxide-semiconductor MOS4, the source electrode of the 6th metal-oxide-semiconductor MOS6, the drain electrode of the second metal-oxide-semiconductor MOS2, third
The grid of the grid of metal-oxide-semiconductor MOS3 and the first metal-oxide-semiconductor MOS1 link together.
Make, to change, to form a sense amplifier on the basis of the domain of storage unit shown in Fig. 2 of the embodiment of the present invention
Domain.Specifically, the domain forming method of the sense amplifier described in the present embodiment, including：
Step S1 provides the domain of a storage unit, and the domain of the storage unit please refers to the above-mentioned explanation to Fig. 2,
Details are not described herein again；
Step S2 removes the second connection hole pattern CT2 and the 9th connection hole pattern in the domain of the storage unit
CT9；
Step S3 extends the first metallic pattern M1 to connecting the second metallic pattern M2 in a second direction；
Step S4 extends the 8th metallic pattern M8 to connecting the 6th metallic pattern M6 in a second direction.
After executing step S1-S4, the domain of the sense amplifier of the present embodiment is formed.
As shown in figure 3, the domain of the sense amplifier of the present embodiment includes：First grizzly bar figure G1 ', the second grizzly bar figure
G2 ', third grizzly bar figure G3 ', the 4th grizzly bar figure G4 ', the first active area figure A1 ', the second active area figure A2 ', third
Active area figure A3 ', the 4th active area figure A4 ', the first connection hole pattern CT1 ', third connection hole pattern CT3 ', the 4th connect
Meet hole pattern CT4 ', the 5th connection hole pattern CT5 ', the 6th connection hole pattern CT6 ', the 7th connection hole pattern CT7 ', the 8th company
Connect hole pattern CT8 ', the tenth connection hole pattern CT10 ', the 11st connection hole pattern CT11 ', the 12nd connection hole pattern CT12 ',
13rd connection hole pattern CT13 ', the 14th connection hole pattern CT14 ', the first metallic pattern M1 ', the second metallic pattern M2 ',
Third metallic pattern M3 ', the 4th metallic pattern M4 ', fifth metal figure M5 ', the 6th metallic pattern M6 ', the 7th metallic pattern
M7 ', the 8th metallic pattern M8 ', the 9th metallic pattern M9 ' and the tenth metallic pattern M10 '.
The first grizzly bar figure G1 ' and third grizzly bar figure G3 ' are spaced setting, the second gate along first direction successively
Article figure G2 ' and the 4th grizzly bar figure G4 ' is spaced setting along first direction successively.The first grizzly bar figure G1 ' and second gate
Figure G2 ' interval setting successively in a second direction, third grizzly bar figure G3 ' and the 4th grizzly bar figure G4 ' in a second direction according to
Minor tick is arranged.First active area figure A1 ', the second active area figure A2 ', third active area figure A3 ' and the 4th active area
Figure A4 ' is spaced setting along first direction successively.The first direction and second direction can be orthogonal both direction.
The interval setting indicates do not have connection or overlapping relation mutually.
First active area figure A1 ' and the first grizzly bar figure G1 ' and the second grizzly bar figure G2 ' is overlapping.First connection
Hole pattern CT1 ' is located in the first active area figure A1 ' of the first sides the first grizzly bar figure G1 '.Third connects hole pattern
CT3 ' is located in the first active area figure A1 ' of the second grizzly bar figure G2 ' the second sides.The first grizzly bar figure G1 ' and second
Grizzly bar figure G2 ' is located at described first and connects between hole pattern CT1 ' and third connection hole pattern CT3 '.
Second active area figure A2 ' and the second grizzly bar figure G2 ' is overlapping.4th connection hole pattern CT4 ' is located at described second
In second active area figure A2 ' of the first sides grizzly bar figure G2 '.5th connection hole pattern CT5 ' is located at the second grizzly bar figure
In second active area figure A2 ' of G2 ' the second sides.
Third active area figure A3 ' and third grizzly bar figure G3 ' is overlapping.6th connection hole pattern CT6 ' is located at the third
In the third active area figure A3 ' of the first sides grizzly bar figure G3 '.7th connection hole pattern CT7 ' is located at the third grizzly bar figure
In the third active area figure A3 ' of G3 ' the second sides.
4th active area figure A4 ' and third grizzly bar figure G3 ' and the 4th grizzly bar figure G4 ' is overlapping.8th connection hole pattern
Shape CT8 ' is located in the 4th active area figure A4 ' of the first sides the third grizzly bar figure G3 '.Tenth connection hole pattern CT10 '
In the 4th active area figure A4 ' of the 4th grizzly bar figure G4 ' the second sides.The third grizzly bar figure G3 ' and the 4th grizzly bar
Figure G4 ' is located between the 8th connection hole pattern CT8 ' and the tenth connection hole pattern CT10 '.The first grizzly bar figure
G1 ', the second grizzly bar figure G2 ', the first side of third grizzly bar figure G3 ' and the 4th grizzly bar figure G4 ' and the second side are second
Opposite both sides on direction.
11st connection hole pattern CT11 ' is located at the first active area figure A1 ' the second sides and third active area figure
In third grizzly bar figure G3 ' between A3 '.12nd connection hole pattern CT12 ' is located at the second active area figure A2 ' and the
In the second grizzly bar figure G2 ' between four the first sides active area figure A4 '.13rd connection hole pattern CT13 ', which is located at first, to be had
In first grizzly bar figure G1 ' of the first sides source region figure A1 '.14th connection hole pattern CT14 ' is located at the 4th active area figure
In 4th grizzly bar figure G4 ' of A4 ' the second sides.The first side of the first active area figure A1 ' and the 4th active area figure A4 '
It is both sides opposite in a first direction with the second side.
First metallic pattern M1 ' coverings the first connection hole pattern CT1 '.The 4th connection of second metallic pattern M2 ' coverings
The connection hole patterns of hole pattern CT4 ' and the 11st CT11 '.
Third metallic pattern M3 ' covers the third connection hole pattern CT3 '.4th metallic pattern M4 ' coverings the described 5th
Connect hole pattern CT5 '.Fifth metal figure M5 ' coverings the 6th connection hole pattern CT6 '.
6th metallic pattern M6 ' coverings the 7th connection hole pattern CT7 ' and the 12nd connection hole pattern CT12 '.7th
Metallic pattern M7 ' coverings the 8th connection hole pattern CT8 '.8th metallic pattern M8 ' coverings the tenth connection hole pattern
CT10’.9th metallic pattern M9 ' coverings the 13rd connection hole pattern CT13 '.Tenth metallic pattern M10 ' covering described the
14 connection hole pattern CT14 '.
Wherein, the first metallic pattern M1 ' is connect with the second metallic pattern M2 ', the 8th metallic pattern M8 ' and institute
State the 6th metallic pattern M6 ' connections.
Fig. 4 is the circuit diagram of the sense amplifier of corresponding diagram 3, and the sense amplifier includes：First metal-oxide-semiconductor MOS1 ',
Two metal-oxide-semiconductor MOS2 ', third metal-oxide-semiconductor MOS3 ', the 4th metal-oxide-semiconductor MOS4 ', the 5th metal-oxide-semiconductor MOS5 ' and the 6th metal-oxide-semiconductor MOS6 '.
The source electrode of third metal-oxide-semiconductor MOS3 ' and the source electrode of the 4th metal-oxide-semiconductor MOS4 ' are all connected with power cord VDD.First metal-oxide-semiconductor
The source electrode of the source electrode of MOS1 ' and the second metal-oxide-semiconductor MOS2 ' are all connected with ground wire VSS.
The drain electrode of third metal-oxide-semiconductor MOS3 ' connects the drain electrode of the 5th metal-oxide-semiconductor MOS5 ', the grid of the 4th metal-oxide-semiconductor MOS4 ', the
The grid of two metal-oxide-semiconductor MOS2 ' and the first bit line BL.The source electrode of 5th metal-oxide-semiconductor MOS5 ' connects the drain electrode of the first metal-oxide-semiconductor MOS1 '.
The drain electrode connection drain electrode of the 6th metal-oxide-semiconductor MOS6 ' of 4th metal-oxide-semiconductor MOS4 ', the grid of third metal-oxide-semiconductor MOS3 ', the first metal-oxide-semiconductor
The grid of MOS1 ' and the second bit line BLX.The source electrode of 6th metal-oxide-semiconductor MOS6 ' connects the drain electrode of the second metal-oxide-semiconductor MOS2 '.5th MOS
The grid of pipe MOS5 ' and the 6th metal-oxide-semiconductor MOS6 ' are all connected with enable signal line EN.
In the circuit diagram of sense amplifier, the first grizzly bar figure G1 ' and it is located at first having for its both sides in a second direction
Source region figure A1 ' constitutes the 5th metal-oxide-semiconductor MOS5 '.Second grizzly bar figure G2 ' and it is located at first having for its both sides in a second direction
Source region figure A1 ' constitutes the first metal-oxide-semiconductor MOS1 '.Second grizzly bar figure G2 ' and it is located at second having for its both sides in a second direction
Source region figure A2 ' constitutes third metal-oxide-semiconductor MOS3 '.Third grizzly bar figure G3 ' and the third for being located at its both sides in a second direction have
Source region figure A3 ' constitutes the 4th metal-oxide-semiconductor MOS4 '.Third grizzly bar figure G3 ' and it is located at the 4th having for its both sides in a second direction
Source region figure A4 ' constitutes the second metal-oxide-semiconductor MOS2 '.4th grizzly bar figure G4 ' and it is located at the 4th having for its both sides in a second direction
Source region figure A4 ' constitutes the 6th metal-oxide-semiconductor MOS6 '.
First metallic pattern M1 ' indicates the first bit line BL, and the first connection hole pattern CT1 ' is suitable for making the 5th metal-oxide-semiconductor MOS5 '
Drain electrode connect the first bit line BL.9th metallic pattern M9 ' and the tenth metallic pattern M10 ' indicates enable signal line EN, the tenth
Three connection hole pattern CT13 ' and the 14th connection hole pattern CT14 ' are suitable for making the grid and the 6th metal-oxide-semiconductor of the 5th metal-oxide-semiconductor MOS5 '
The grid of MOS6 ' is all connected with enable signal line EN.4th metallic pattern M4 ' and fifth metal figure M5 ' indicate power cord
VDD, the 5th connection hole pattern CT5 ' and the 6th connection hole pattern CT6 ' are suitable for making third metal-oxide-semiconductor MOS3 ' and the 4th metal-oxide-semiconductor
The source electrode connection power cord VDD of MOS4 '.Third metallic pattern M3 ' and the 7th metallic pattern M7 ' indicates that ground wire VSS, third connect
The connection hole patterns of hole pattern CT3 ' and the 8th CT8 ' is met to be suitable for that the source electrode of the first metal-oxide-semiconductor MOS1 ' and the second metal-oxide-semiconductor MOS2 ' is made to connect
It is grounded VSS.
Second metallic pattern M2 ' coverings the 4th connection hole pattern CT4 ' and the 11st connection hole pattern CT11 ', and
It is connect with the first metallic pattern M1 ', this makes the drain electrode of third metal-oxide-semiconductor MOS3 ', the drain electrode of the 5th metal-oxide-semiconductor MOS5 ', the 4th MOS
The grid of pipe MOS4 ', the grid of the second metal-oxide-semiconductor MOS2 ' and the first bit line BL link together.
6th metallic pattern M6 ' covering the 7th connection hole pattern CT7 ' and the 12nd connects hole pattern CT12 ', and with the
Eight metallic pattern M8 ' connections, this makes the drain electrode of the 4th metal-oxide-semiconductor MOS4 ' connect the drain electrode of the 6th metal-oxide-semiconductor MOS6 ', the 3rd MOS
The grid of pipe MOS3 ', the grid of the first metal-oxide-semiconductor MOS1 ' and the second bit line BLX link together.
Only it need to remove two on the domain of storage unit it can be seen from the domain forming method of above-mentioned sense amplifier
It connects hole pattern and extends two metallic patterns, you can obtain sense amplifier domain identical with storage unit design rule, no
But the method for simplifying domain formation, also substantially reduces the size of sense amplifier.
In the prior art, storage array is that storage unit is spliced to form, so generally being set in the domain of storage unit
It is equipped with the edge line for splicing.With continued reference to Fig. 2, the domain of storage unit is provided with third edge line L3, the 4th side
Edge straight line L4, the 5th edge line L5 and the 5th edge line L6.
Third edge line L3 and the 4th edge line L4 is arranged along first direction, the 5th edge line L5 and the 5th edge
Straight line L6 is arranged in a second direction.Third edge line L3 intersects vertically with the 5th edge line L5 and the 5th edge line L6,
4th edge line L4 and the 5th edge line L5 and the 5th edge line L6 intersect vertically.
Third edge line L3 meets hole pattern CT1 through first, the 6th meets hole pattern CT6 and the 8th and meet hole pattern CT8.The
Four edge line L4 meet hole pattern CT3 through third, the 5th meet hole pattern CT5 and the tenth and meet hole pattern CT10.5th edge is straight
Line L5 meets hole pattern CT13 through the 13rd.5th edge line L6 meets hole pattern CT14 through the 13rd.
When the domain of two storage units is spliced, the domain of a storage unit is done into mirror image along third edge line L3
Overturning, i.e. 180 degree are overturn, and are then moved the domain of storage unit, are made the third edge line L3 in two storage unit domains
Coincidence.Certainly, those skilled in the art know, when splicing can also be by the domain of storage unit along other edge line mirrors
Picture simultaneously overlaps, and details are not described herein again.
Due to the sense amplifier of the present embodiment be based on storage unit domain modification made of, so, it is described sensitive
The domain of amplifier can be with the domain direct splicing of storage unit to realize that sense amplifier is connected with the circuit of storage unit.
The circuit connection of sense amplifier and storage unit can be with refering to what is shown in Fig. 5, sense amplifier and storage unit pass through
One bit line BL and the second bit line BLX link together.
In order to realize the splicing of domain, as shown in figure 3, the domain of the sense amplifier further includes：First edge straight line
L1, second edge straight line L2, the 7th edge line L7 and the 8th edge line L8.
First edge straight line L1 and second edge straight line L2 is arranged along first direction, the 7th edge line L7 and the 8th side
Edge straight line L8 is arranged in a second direction.First edge straight line L1 phases vertical with the 7th edge line L7 and the 8th edge line L8
It hands over, second edge straight line L2 intersects vertically with the 7th edge line L7 and the 8th edge line L8.
First edge straight line L1 meets hole pattern CT1 ' through first, the 6th meets hole pattern CT6 ' and the 8th and connect hole pattern
CT8’.Second edge straight line L2 meets hole pattern CT3 ' through third, the 5th meets hole pattern CT5 ' and the tenth and meet hole pattern CT10 '.
First edge straight line L7 meets hole pattern CT13 ' through the 13rd.First edge straight line L8 meets hole pattern CT14 ' through the 14th.
It, can be by the domain of storage unit along third side when the domain of sense amplifier and the domain of storage unit are spliced
Edge straight line L3 or the 4th edge line L4 carry out mirror image switch, i.e. 180 degree is overturn；After mirror image switch, the version of mobile storage unit
The domain of figure or sense amplifier make first edge straight line L1 and third edge line L3 overlap or second edge straight line L2 with
4th edge line L4 is overlapped.It is of course also possible to the domain of storage unit is not overturn, but by the domain of sense amplifier along
One edge line L1 or second edge straight line L2 carry out mirror image switch.Fig. 6 is the version of the domain and storage unit of sense amplifier
Scheme spliced effect.As seen from Figure 6 the domain of sense amplifier and the domain of storage unit splicing after without splicing gap,
Further reduce the size of memory.
Although present disclosure is as above, present invention is not limited to this.Any those skilled in the art are not departing from this
It in the spirit and scope of invention, can make various changes or modifications, therefore protection scope of the present invention should be with claim institute
Subject to the range of restriction.
Claims (10)
1. a kind of domain forming method of sense amplifier, which is characterized in that including：
The domain of the first storage unit is provided, the domain of first storage unit includes：First grizzly bar figure, the second grizzly bar figure
Shape, third grizzly bar figure, the 4th grizzly bar figure, the first active area figure, the second active area figure, third active area figure,
Four active area figures, the first connection hole pattern, the second connection hole pattern, third connection hole pattern, the 4th connection hole pattern, the 5th
Connection hole pattern, the 6th connection hole pattern, the 7th connection hole pattern, the 8th connection hole pattern, the 9th connection hole pattern, the tenth company
Connect hole pattern, the 11st connection hole pattern, the 12nd connection hole pattern, the 13rd connection hole pattern, the 14th connection hole pattern,
First metallic pattern, the second metallic pattern, third metallic pattern, the 4th metallic pattern, fifth metal figure, the 6th metal figure
Shape, the 7th metallic pattern, the 8th metallic pattern, the 9th metallic pattern and the tenth metallic pattern；
The first grizzly bar figure and third grizzly bar figure are spaced setting, the second grizzly bar figure and along first direction successively
Four grizzly bar figures are spaced setting successively along the first direction；The first grizzly bar figure and the second grizzly bar figure are in a second direction
Interval setting successively, the third grizzly bar figure and the 4th grizzly bar figure are spaced setting successively along the second direction；Described
One active area figure, the second active area figure, third active area figure and the 4th active area figure along the first direction successively
Interval setting；
The first active area figure and the first grizzly bar figure and the second grizzly bar figure are overlapping, the first connection hole pattern
In the first active area figure of the first side of the first grizzly bar figure, the second connecting hole figure is located at the first grid
In the first active area figure between figure the second side and second the first side of grizzly bar figure, the third connecting hole figure is located at
In first active area figure of the second grizzly bar figure the second side；
The second active area figure is overlapping with the second grizzly bar figure, and the 4th connecting hole figure is located at the second gate
In second active area figure of the first side of figure, the 5th connecting hole figure is located at the second grizzly bar figure the second side
In second active area figure；
The third active area figure is overlapping with third grizzly bar figure, and the 6th connecting hole figure is located at the third grizzly bar figure
In the third active area figure of the first side of shape, the 7th connecting hole figure is located at the third of the third grizzly bar figure the second side
In active area figure；
The 4th active area figure and third grizzly bar figure and the 4th grizzly bar figure are overlapping, and the 8th connecting hole figure is located at
In 4th active area figure of the first side of the third grizzly bar figure, the 9th connecting hole figure is located at the third grizzly bar figure
In the 4th active area figure between shape the second side and the 4th the first side of grizzly bar figure, the tenth connecting hole figure is located at described
In 4th active area figure of the 4th grizzly bar figure the second side；First grizzly bar figure, the second grizzly bar figure, third grizzly bar figure and
First side of the 4th grizzly bar figure and the second side are both sides opposite in a second direction；
The 11st connecting hole figure between the first active area figure the second side and third active area figure
In three grizzly bar figures, the 12nd connecting hole figure is between the second active area figure and the 4th the first side of active area figure
The second grizzly bar figure in, the 13rd connecting hole figure is located in the first grizzly bar figure of first the first side of active area figure,
14 connecting hole figures are located in the 4th grizzly bar figure of the 4th active area figure the second side；The first active area figure and
First side of four active area figures and the second side are both sides opposite in a first direction；
First metallic pattern covering the first connection hole pattern, the second metallic pattern covering the second connection hole pattern
Shape, the 4th connection hole pattern and the 11st connection hole pattern, third metallic pattern cover the third and connect hole pattern, the 4th gold medal
Belong to figure covering the 5th connection hole pattern, fifth metal figure covering the 6th connection hole pattern, the 6th metallic pattern
Cover it is described 7th connection hole pattern, the 9th connection hole pattern and the 12nd connection hole pattern, the 7th metallic pattern covering described in
8th connection hole pattern, the 8th metallic pattern covering the tenth connection hole pattern, the 9th metallic pattern covering the described 13rd
Connect hole pattern, the tenth metallic pattern covering the 14th connection hole pattern；
Remove the second connection hole pattern and the 9th connection hole pattern in the domain of the storage unit；
Extend first metallic pattern in a second direction to connecting second metallic pattern；
Extend the 8th metallic pattern in a second direction to connecting the 6th metallic pattern.
2. the domain forming method of sense amplifier as described in claim 1, which is characterized in that further include：
In the domain of the sense amplifier, first edge straight line, the first edge straight line are set along the first direction
The first connection hole pattern, the 6th connection hole pattern in the domain of the sense amplifier and the 8th connection hole pattern.
3. the domain forming method of sense amplifier as claimed in claim 2, which is characterized in that further include：
The domain of second storage unit, the domain phase of the domain of second storage unit and first storage unit are provided
Together；
In the domain of second storage unit, third edge line is set along the first direction, the third edge is straight
First connection hole pattern, sixth connection hole pattern and eightth connection hole pattern of the line in the domain of second storage unit
Shape；
The domain of second storage unit is subjected to mirror image switch along the third edge line, or by the sensitive amplification
The domain of device carries out mirror image switch along the first edge straight line；
After mirror image switch, the domain of mobile second storage unit or the domain of sense amplifier make the first edge straight line
It is overlapped with third edge line.
4. the domain forming method of sense amplifier as described in claim 1, which is characterized in that further include：
In the domain of the sense amplifier, second edge straight line, the second edge straight line are set along the first direction
Third connection hole pattern, the 5th connection hole pattern and the tenth connection hole pattern in the domain of the sense amplifier.
5. the domain forming method of sense amplifier as claimed in claim 4, which is characterized in that further include：
The domain of second storage unit, the domain phase of the domain of second storage unit and first storage unit are provided
Together；
In the domain of second storage unit, the 4th edge line is set along the first direction, the 4th edge is straight
Line third connection hole pattern, the 5th connection hole pattern and the tenth connection hole pattern in the domain of second storage unit；
The domain of second storage unit is subjected to mirror image switch along the 4th edge line, or by the sensitive amplification
The domain of device carries out mirror image switch along the second edge straight line；
After mirror image switch, the domain of mobile second storage unit or the domain of sense amplifier make the second edge straight line
It is overlapped with the 4th edge line.
6. a kind of domain of sense amplifier, which is characterized in that including：First grizzly bar figure, the second grizzly bar figure, third grizzly bar
Figure, the 4th grizzly bar figure, the first active area figure, the second active area figure, third active area figure, the 4th active area figure
Shape, the first connection hole pattern, third connection hole pattern, the 4th connection hole pattern, the 5th connection hole pattern, the 6th connection hole pattern
Shape, the 7th connection hole pattern, the 8th connection hole pattern, the tenth connection hole pattern, the 11st connection hole pattern, the 12nd connecting hole
Figure, the 13rd connection hole pattern, the 14th connection hole pattern, the first metallic pattern, the second metallic pattern, third metal figure
Shape, the 4th metallic pattern, fifth metal figure, the 6th metallic pattern, the 7th metallic pattern, the 8th metallic pattern, the 9th metal
Figure and the tenth metallic pattern；
The first grizzly bar figure and third grizzly bar figure are spaced setting, the second grizzly bar figure and along first direction successively
Four grizzly bar figures are spaced setting successively along the first direction；The first grizzly bar figure and the second grizzly bar figure are in a second direction
Interval setting successively, the third grizzly bar figure and the 4th grizzly bar figure are spaced setting successively along the second direction；Described
One active area figure, the second active area figure, third active area figure and the 4th active area figure along the first direction successively
Interval setting；
The first active area figure and the first grizzly bar figure and the second grizzly bar figure are overlapping, the first connection hole pattern
In the first active area figure of the first side of the first grizzly bar figure, the third connecting hole figure is located at the second gate
In first active area figure of figure the second side, the first grizzly bar figure and the second grizzly bar pattern bit are in first connection
Between hole pattern and third connection hole pattern；
The second active area figure is overlapping with the second grizzly bar figure, and the 4th connecting hole figure is located at the second gate
In second active area figure of the first side of figure, the 5th connecting hole figure is located at the second grizzly bar figure the second side
In second active area figure；
The third active area figure is overlapping with third grizzly bar figure, and the 6th connecting hole figure is located at the third grizzly bar figure
In the third active area figure of the first side of shape, the 7th connecting hole figure is located at the third of the third grizzly bar figure the second side
In active area figure；
The 4th active area figure and third grizzly bar figure and the 4th grizzly bar figure are overlapping, and the 8th connecting hole figure is located at
In 4th active area figure of the first side of the third grizzly bar figure, the tenth connecting hole figure is located at the 4th grizzly bar figure
In 4th active area figure of shape the second side, the third grizzly bar figure and the 4th grizzly bar figure are located at the described 8th and connect hole pattern
Between shape and the tenth connection hole pattern；First grizzly bar figure, the second grizzly bar figure, third grizzly bar figure and the 4th grizzly bar figure
First side and the second side are both sides opposite in a second direction；
The 11st connecting hole figure between the first active area figure the second side and third active area figure
In three grizzly bar figures, the 12nd connecting hole figure is between the second active area figure and the 4th the first side of active area figure
The second grizzly bar figure in, the 13rd connecting hole figure is located in the first grizzly bar figure of first the first side of active area figure,
14 connecting hole figures are located in the 4th grizzly bar figure of the 4th active area figure the second side；The first active area figure and
First side of four active area figures and the second side are both sides opposite in a first direction；
First metallic pattern covering the first connection hole pattern, the second metallic pattern covering the 4th connection hole pattern
With the 11st connection hole pattern, third metallic pattern covers the third and connects hole pattern, the 4th metallic pattern covering described the
Five connection hole patterns, fifth metal figure covering the 6th connection hole pattern, the 6th metallic pattern covering the 7th connection
Hole pattern and the 12nd connection hole pattern, the 7th metallic pattern covering the 8th connection hole pattern, the covering of the 8th metallic pattern
It is described tenth connection hole pattern, the 9th metallic pattern covering it is described 13rd connection hole pattern, the tenth metallic pattern covering described in
14th connection hole pattern；
Wherein, first metallic pattern is connect with second metallic pattern, the 8th metallic pattern and the 6th metal figure
Shape connects.
7. the domain of sense amplifier as claimed in claim 6, which is characterized in that further include：First edge straight line, described
One edge line is arranged along the first direction and first in the domain of the sense amplifier connects hole pattern, the 6th connects
Hole pattern and the 8th connects hole pattern.
8. the domain of sense amplifier as claimed in claim 6, which is characterized in that further include：Second edge straight line, described
Two edge lines are arranged along the first direction and third connects hole pattern, the 5th connects hole in the domain of the sense amplifier
Figure and the tenth connects hole pattern.
9. a kind of domain of memory, which is characterized in that including：
The domain of sense amplifier described in claim 7；
The domain of the domain of storage unit, the storage unit includes third edge line, the third edge line be suitable for
The first edge straight line is overlapped to splice the domain of the storage unit and the domain of sense amplifier.
10. a kind of domain of memory, which is characterized in that including：
The domain of sense amplifier according to any one of claims 8；
The domain of storage unit, the domain of the storage unit include the 4th edge line, the 4th edge line be suitable for
The second edge straight line is overlapped to splice the domain of the storage unit and the domain of sense amplifier.
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| WO2006054355A1 (en) * | 2004-11-19 | 2006-05-26 | Renesas Technology Corp. | Semiconductor storage device |
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