CN105823904A - Two-degree of freedom MEMS piezoelectric beam structure - Google Patents
Two-degree of freedom MEMS piezoelectric beam structure Download PDFInfo
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- CN105823904A CN105823904A CN201610160263.8A CN201610160263A CN105823904A CN 105823904 A CN105823904 A CN 105823904A CN 201610160263 A CN201610160263 A CN 201610160263A CN 105823904 A CN105823904 A CN 105823904A
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- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 12
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 12
- 239000010453 quartz Substances 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 11
- 229910017083 AlN Inorganic materials 0.000 claims description 6
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 6
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 229910052804 chromium Inorganic materials 0.000 claims description 6
- 239000011651 chromium Substances 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 239000010949 copper Substances 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 239000010931 gold Substances 0.000 claims description 6
- 229910052750 molybdenum Inorganic materials 0.000 claims description 6
- 239000011733 molybdenum Substances 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- 229910052697 platinum Inorganic materials 0.000 claims description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 6
- 229920005591 polysilicon Polymers 0.000 claims description 6
- 239000010936 titanium Substances 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- 239000000919 ceramic Substances 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- 239000010437 gem Substances 0.000 claims description 2
- 229910001751 gemstone Inorganic materials 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 abstract description 4
- 239000010410 layer Substances 0.000 abstract 9
- 239000000758 substrate Substances 0.000 abstract 4
- 239000011229 interlayer Substances 0.000 abstract 3
- 230000000694 effects Effects 0.000 description 19
- 238000001514 detection method Methods 0.000 description 12
- 239000013078 crystal Substances 0.000 description 6
- 230000005684 electric field Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/09—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by piezoelectric pick-up
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
- G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
- G01C19/56—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
- G01C19/5642—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using vibrating bars or beams
- G01C19/5656—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using vibrating bars or beams the devices involving a micromechanical structure
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P2015/0862—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with particular means being integrated into a MEMS accelerometer structure for providing particular additional functionalities to those of a spring mass system
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Radar, Positioning & Navigation (AREA)
- Remote Sensing (AREA)
- Gyroscopes (AREA)
Abstract
The invention provides a two-degree of freedom MEMS piezoelectric beam structure, which comprises a substrate electrode, an anchor, a first piezoelectric layer, an interlayer electrode, a second piezoelectric layer, a first upper electrode, a second upper electrode and a third upper electrode, wherein the substrate electrode is rectangular; the anchor is made at one longitudinal side of the back surface of the substrate electrode; the first piezoelectric layer is made on the substrate electrode; the interlayer electrode is made on the first piezoelectric layer; the second piezoelectric layer is made on the interlayer electrode; the first upper electrode is made at one transverse side on the second piezoelectric layer and the width is smaller than half that of the second piezoelectric layer; the second upper electrode is made at the other transverse side on the second piezoelectric layer; the third upper electrode is made in the transverse middle of the second piezoelectric layer; and the first upper electrode, the second upper electrode and the third upper electrode are not contacted. The two-degree of freedom MEMS piezoelectric beam structure has the advantages of small quadrature errors and high electromechanical conversion efficiency.
Description
Technical field
The invention belongs to microelectronics technology, particularly a kind of double freedom MEMS piezoelectric beam structure.
Background technology
Piezoelectric refers to be under pressure and can occur the crystalline material of voltage difference when acting between both ends of the surface, and the behavior of this electric charge under force redistribution becomes piezoelectric effect；General piezoelectric is also equipped with inverse piezoelectric effect, i.e. produces deformation at External Electrical Field lower piezoelectric crystal.Typical piezoelectric has quartz, piezoelectric ceramics, aluminium nitride and organic piezoelectric materials.Piezoelectric is widely used in MEMS, can be used to prepare sensor, executor or resonating device.
Piezoelectric effect can be used to prepare sensor, and such as quartz accelerometer utilizes quartz crystal to produce electric potential difference under the effect of inertia force and detects to degree of being accelerated；Inverse piezoelectric effect can be used to prepare executor, such as radio-frequency (RF) switch based on piezoelectric or MEMS gyro；High frequency aluminium nitride resonator and some SAW devices realize also with inverse piezoelectric effect.
The operation principle of quartz Gyro is, first quartz crystal elastic beam structure carries out harmonic moving under inverse piezoelectric effect drives, when there being turning rate input, the Corrioli's effect that angular velocity introduces is orthogonal with harmonic moving direction, Corrioli's effect acts on spring beam, spring beam produces an electric potential difference under the effect of piezoelectric effect, detects this electric potential difference and just can know that the size of input angular velocity.Quartz crystal can detect turning rate input it is critical that the elastic beam structure prepared by quartz crystal the most all possesses piezoelectric property.
Although quartz Gyro precision is high, but volume is more than MEMS gyro, so commercial consumer level gyro many employings MEMS structure.MEMS gyro all uses electrostatic drive the most mostly, the mode of capacitance detecting, although the precision of this working method capacitance detecting is high, but the electromechanical conversion efficiency of electrostatic drive mode is relatively low, needs bigger driving voltage.
The Goericke of University of California Berkeley is attempted with Piezoelectric Driving, and the mode of capacitance detecting solves this problem, and regrettably researcher does not find suitable electrode configuration mode to drive the oscillation crosswise of piezoelectric beam.Its snakelike electrode A lN piezoelectric beam structure used, under Piezoelectric Driving, moves the most in the horizontal direction, the component motion being also equipped with in vertical direction, and this structure introduces bigger quadrature error, causes the precision of gyro to be difficult to improve.
Driving and the problem of detection to solve piezoelectric mems structure, the invention provides a kind of double freedom MEMS piezoelectric beam structure, this structure is carried out rational modification by traditional bimorph structure and gets, it is possible to achieve the orthogonal motion in face and in vertical direction.This structure can be separately as the driving structure of MEMS or detection structure, it is also possible to as quartz crystal spring beam, both as driving structure, also serve as detecting structure.
Summary of the invention
It is an object of the invention to, it is provided that a kind of double freedom MEMS piezoelectric beam structure, it can be driven in that orthogonal direction or detect, and this structure has the advantages that quadrature error is little, electromechanical conversion efficiency is high.
The present invention provides (need not manage)
The invention has the beneficial effects as follows, it can be driven in that orthogonal direction or detect, and this structure has the advantages that quadrature error is little, electromechanical conversion efficiency is high.
Accompanying drawing explanation
For further illustrating the technology contents of the present invention, list accompanying drawing below in conjunction with/embodiment, describe in detail as after, wherein:
Fig. 1 is the schematic diagram of a kind of double freedom MEMS piezoelectric beam structure that the present invention proposes.
Detailed description of the invention
Referring to shown in Fig. 1, the present invention provides a kind of double freedom MEMS piezoelectric beam structure, including:
One underlayer electrode, this underlayer electrode is rectangle, and the material of described underlayer electrode is aluminum, gold, platinum, molybdenum, titanium, chromium, nickel, copper or polysilicon；
One anchor point, it is produced on the side that the underlayer electrode back side is longitudinal, and the material of described anchor point is silicon, carborundum, quartz, silicon nitride, aluminium nitride or gem；
One first piezoelectric layer, it is produced on underlayer electrode；
One sandwiching electrodes, it is produced on the first piezoelectric layer, and the material of described sandwiching electrodes is aluminum, gold, platinum, molybdenum, titanium, chromium, nickel, copper or polysilicon；
One second piezoelectric layer, it is produced on sandwiching electrodes；
The first wherein said piezoelectric layer and the material of the second piezoelectric layer are identical, for aluminium nitride or piezoelectric ceramics；
Electrode on one first, it is produced on side horizontal on the second piezoelectric layer, and its width is less than 1/2nd of the second piezoelectric layer；
Electrode on one second, it is produced on opposite side horizontal on the second piezoelectric layer；
On wherein said second, on the size shape and first of electrode, electrode is identical；
Electrode on one the 3rd, it is produced on centre horizontal on the second piezoelectric layer；
Electrode on wherein said first, on electrode and the 3rd, the material of electrode is identical, for aluminum, gold, platinum, molybdenum, titanium, chromium, nickel, copper or polysilicon on second；
On wherein said the 3rd, on electrode and first, on electrode and second, the distance of electrode is identical；
This electrode on first, on electrode and the 3rd, electrode does not contacts on second.
Describing the mode of operation of double freedom MEMS piezoelectric beam structure for convenience, the direction that will be perpendicular to underlayer electrode 2 upper surface here is defined as vertical direction, and the direction pointing to anchor point 1 is lower direction；In the plane of the second piezoelectric layer 5 upper surface, being perpendicular on first on electrode 6, second direction of electrode 8 on electrode 7 and the 3rd and be defined as horizontal direction, on second, direction, electrode 7 place is left direction；In the plane of the second piezoelectric layer 5 upper surface, being parallel on first on electrode 6, second direction of electrode 8 on electrode 7 and the 3rd and be defined as longitudinal direction, the direction pointing to anchor point is defined as backward.
Described double freedom MEMS piezoelectric beam structure, can be operated under four kinds of mode of operations, and one is for all detecting laterally and vertically going up；It two is laterally driven, and vertical direction detects；It three drives up for Vertical Square, laterally detects；It is four for being all driven on vertical and detection direction.
In the first operational mode, sandwiching electrodes 4 applies fixed potential, when described double freedom MEMS piezoelectric beam structure produces strain under the effect of external force, electric charge on piezoelectric beam redistributes, electric potential difference is there is between Different electrodes, detect these electric potential differences, it is possible to know the size of the strain of beam.Wherein, when piezoelectric beam structure has the strain of vertical direction, there is the electric charge of redistribution in the upper and lower surface of the first piezoelectric layer 3 and the second piezoelectric layer 5, detection underlayer electrode 2 is relative to the electric potential difference of sandwiching electrodes 4, or in detection the 3rd electrode 8 relative to the electric potential difference of sandwiching electrodes 4, just can calculate the strain in vertical direction of piezoelectric beam structure, thus calculate the size of external force component in vertical direction.
When piezoelectric beam structure has horizontal strain, there is the electric charge of redistribution in the left and right sides of the first piezoelectric layer 3 and the second piezoelectric layer 5, detection electric potential difference between electrode 7 on electrode 6 and second on the first of the second piezoelectric layer 5 upper surface, it is known that the strain that piezoelectric beam structure is in the horizontal, thus calculate the size of external force component in the horizontal, wherein electric potential difference between electric potential difference and electrode 7 on sandwiching electrodes 4 and second between electrode 6 and sandwiching electrodes 4 is equal on first, and three electrodes constitute the difference output electrode with sandwiching electrodes 4 as common mode electrode.
In a second mode of operation, sandwiching electrodes 4 applies fixed potential, on first, on electrode 6, sandwiching electrodes 4 and second, 7 three electrodes of electrode form Differential Input electrode with sandwiching electrodes 4 for common mode electrode, on first, the electric field between electrode 6 and sandwiching electrodes 4 makes the strain in the longitudinal direction of electrode 6 side on first under the effect of inverse piezoelectric effect of the second piezoelectric layer 5, and on sandwiching electrodes 4 and second, the electric field between electrode 7 also makes the second piezoelectric layer 5 produce the strain on longitudinal in sandwiching electrodes 4 side under the effect of inverse piezoelectric effect.The strain that two fields make the second piezoelectric layer 5 produce at longitudinal direction is equal in magnitude, in opposite direction, has thus made the second piezoelectric layer 5 deflecting in the horizontal.Therefore, under the effect of differential input voltage, piezoelectric beam structure only has transverse strain, thus can control piezoelectric beam motion in the horizontal by applying the frequency differential voltage signal different with amplitude.
Piezoelectric beam Cleaning Principle in vertical direction is identical with the first mode of operation, when having the strain in vertical direction in piezoelectric beam structure, there is the electric charge of redistribution in the upper and lower surface of the first piezoelectric layer 3 and the second piezoelectric layer 5, detection underlayer electrode 2 is relative to the electric potential difference of sandwiching electrodes 4, or in detection the 3rd electrode 8 relative to the electric potential difference of sandwiching electrodes 4, it is possible to calculate piezoelectric beam structure dependent variable in vertical direction.
In the third operational mode, sandwiching electrodes 4 applies fixed potential, on underlayer electrode 2 and the 3rd, electrode 8 applies identical voltage, under the effect of first piezoelectric layer 3 electric potential difference between sandwiching electrodes 4 and underlayer electrode 2, producing longitudinal strain, the second piezoelectric layer 5 is on the 3rd under the effect of electric potential difference between electrode 8 and sandwiching electrodes 4 simultaneously, also produces certain longitudinal strain, the two longitudinal strain in opposite direction so that piezoelectric beam structure produces certain strain in vertical direction.Thus can be applied to amplitude and the frequency of voltage between electrode 8 and sandwiching electrodes 4 on underlayer electrode the 2, the 3rd by control, drive piezoelectricity girder construction to vibrate in vertical direction.
Piezoelectric beam Cleaning Principle in the horizontal is identical with the first mode of operation, when having strain transversely in piezoelectric beam structure, there is the electric charge of redistribution in the left and right sides of the first piezoelectric layer 3 and the second piezoelectric layer 5, on first, on electrode 6, second, electrode 7 and sandwiching electrodes 4 constitute difference output electrode, sandwiching electrodes 4 is common mode electrode, the output voltage of detection difference output electrode is it is known that the strain in the horizontal of piezoelectric beam structure, thus calculates the size of external force component in the horizontal.
Under the 4th kind of mode of operation, piezoelectric beam structure is identical with the driving principle under the second mode of operation and the third mode of operation with driving principle transversely in vertical direction.Sandwiching electrodes 4 applies fixed potential, and on first, on electrode 6, second, electrode 7 and sandwiching electrodes 4 constitute Differential Input electrode, and sandwiching electrodes 4 is common mode electrode, and differential input voltage controls piezoelectric beam vibration in the horizontal；On underlayer electrode the 2, the 3rd, electrode 8 inputs identical voltage, controls beam vibration in vertical direction, and beam vibration in vertical direction and transversely is separate, does not interfere with each other.
Four kinds of above-mentioned piezoelectric beam mode of operations can select according to concrete applied environment, as as during such as the driver part of micromechanics tweezers, the 4th kind of mode of operation can be selected, so cantilever of tweezers can move in that orthogonal direction, it is possible to achieve the clamping of small items, movement, puts down operation；During as accelerometer detection part, the first mode of operation can be selected, owing to the configuration of electrode can detect piezoelectric beam deformation laterally and vertically, therefore, it is possible to realize two-axis acceleration detection；Second can realize the angular velocity detection of similar quartz Gyro with the third mode of operation, drives piezoelectric beam harmonic moving in one direction, another direction can be detected the yaw displacement caused by Coriolis force.
It is therefore proposed that double freedom MEMS piezoelectric beam structure there is several functions, can realize according to existing technique, will not additionally increase cost, the miniaturization further for MEMS actuator and detector has great importance.
Above example only in order to technical scheme to be described, is not intended to limit.Although the present invention being described in detail with reference to previous embodiment, it will be understood by those within the art that: the technical scheme described in foregoing embodiments still can be modified by it, or wherein portion of techniques feature is carried out equivalent；And these amendments or replacement, do not make the essence of appropriate technical solution depart from the spirit and scope of various embodiments of the present invention technical scheme.
Claims (8)
1. a double freedom MEMS piezoelectric beam structure, including:
One underlayer electrode, this underlayer electrode is rectangle；
One anchor point, it is produced on the side that the underlayer electrode back side is longitudinal；
One first piezoelectric layer, it is produced on underlayer electrode；
One sandwiching electrodes, it is produced on the first piezoelectric layer；
One second piezoelectric layer, it is produced on sandwiching electrodes；
Electrode on one first, it is produced on side horizontal on the second piezoelectric layer, and its width is less than 1/2nd of the second piezoelectric layer；
Electrode on one second, it is produced on opposite side horizontal on the second piezoelectric layer；
Electrode on one the 3rd, it is produced on centre horizontal on the second piezoelectric layer,
This electrode on first, on electrode and the 3rd, electrode does not contacts on second.
Double freedom MEMS piezoelectric beam structure the most according to claim 1, on wherein said second, on the size shape and first of electrode, electrode is identical.
Double freedom MEMS piezoelectric beam structure the most according to claim 1, on wherein said the 3rd, on electrode and first, on electrode and second, the distance of electrode is identical.
Double freedom MEMS piezoelectric beam structure the most according to claim 1, the material of wherein said anchor point is silicon, carborundum, quartz, silicon nitride, aluminium nitride or gem.
Double freedom MEMS piezoelectric beam structure the most according to claim 1, the material of wherein said underlayer electrode is aluminum, gold, platinum, molybdenum, titanium, chromium, nickel, copper or polysilicon.
Double freedom MEMS piezoelectric beam structure the most according to claim 1, the material of wherein said sandwiching electrodes is aluminum, gold, platinum, molybdenum, titanium, chromium, nickel, copper or polysilicon.
Double freedom MEMS piezoelectric beam structure the most according to claim 1, the first wherein said piezoelectric layer and the material of the second piezoelectric layer are identical, for aluminium nitride or piezoelectric ceramics.
Double freedom MEMS piezoelectric beam structure the most according to claim 1, electrode on wherein said first, on electrode and the 3rd, the material of electrode is identical, for aluminum, gold, platinum, molybdenum, titanium, chromium, nickel, copper or polysilicon on second.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201610160263.8A CN105823904A (en) | 2016-03-21 | 2016-03-21 | Two-degree of freedom MEMS piezoelectric beam structure |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201610160263.8A CN105823904A (en) | 2016-03-21 | 2016-03-21 | Two-degree of freedom MEMS piezoelectric beam structure |
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| CN201610160263.8A Pending CN105823904A (en) | 2016-03-21 | 2016-03-21 | Two-degree of freedom MEMS piezoelectric beam structure |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20150318838A1 (en) * | 2014-05-02 | 2015-11-05 | Rf Micro Devices, Inc. | Enhanced mems vibrating device |
| US9991872B2 (en) | 2014-04-04 | 2018-06-05 | Qorvo Us, Inc. | MEMS resonator with functional layers |
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| CN103700762A (en) * | 2012-09-27 | 2014-04-02 | 三美电机株式会社 | Piezoelectric actuator and optical scanning apparatus |
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| US9991872B2 (en) | 2014-04-04 | 2018-06-05 | Qorvo Us, Inc. | MEMS resonator with functional layers |
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Application publication date: 20160803 |