CN105811900A - A millimeter wave power amplifier - Google Patents
A millimeter wave power amplifier Download PDFInfo
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- CN105811900A CN105811900A CN201410831720.2A CN201410831720A CN105811900A CN 105811900 A CN105811900 A CN 105811900A CN 201410831720 A CN201410831720 A CN 201410831720A CN 105811900 A CN105811900 A CN 105811900A
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- power
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- amplification
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Abstract
The invention provides a millimeter wave power amplifier comprising an amplifying stage unit, a power synthesizer and a power divider. The amplifying stage unit is between the power synthesizer and the power divider and comprises a gain amplifying stage, a driving amplifying stage and an output amplifying stage, which are connected successively. An input signal of the amplifier is -20dBm; after amplification of the gain amplifying stage and the output amplifying stage, the output power can reach 18dBm; then the signal passes through a final-stage high power amplification chip; the maximum output power thereof is 30.8dBm (1.2W) within the frequency range of 38-40GHz, and the final amplifier output power is 34.8dBm (3W). The Ka wave band millimeter wave power amplifier can be widely used in electronic systems and can achieve special effects.
Description
Technical field
The present invention relates to a kind of be widely used in all kinds of radar component of Ka frequency range and the power amplifier of communication system, be specially a kind of millimeter-wave power amplifiers.
Background technology
Millimeter wave can be widely used in electronic system with the advantage of its uniqueness, and can produce special usefulness.But, millimeter wave power resource is still the restriction millimeter-wave technology key bottleneck problem in application system at present, especially important in wideband power amplifier present millimeter-wave systems especially Amplifier type, based on this, exploitation bandwidth, the millimeter wave solid state power amplifying technique that reliability is high become current millimeter wave field research emphasis and main development direction.
Summary of the invention
It is an object of the invention to provide a kind of millimeter-wave power amplifiers, use on amplifier, be provided with gain amplification stage, drive amplification level, output amplifier stage, power divider and power combiner, with the problem solving to propose in above-mentioned background technology.
For achieving the above object, the present invention provides following technical scheme: a kind of Ka wave band millimeter wave power amplifier, including amplifier stage unit, power combiner and power divider, described amplifier stage unit is between described power combiner and power divider, described amplifier stage unit includes gain amplification stage, drive amplification level and output amplifier stage, described gain amplification stage, drive amplification pole and output amplifier stage are sequentially connected with, the input signal of amplifier is-20dBm, after being then passed through gain amplification stage and output amplifier stage amplification, output can reach 18dBm, be then passed through is a final stage high power amplification chip, in 38-40GHz frequency band, its peak power output is 30.8dBm(1.2W), final amplifier output power is 34.8dBm(3W).
Preferably, described power amplifier operating frequency 38-40GHz, it is achieved power is output as 34.8dBm(3W), gain reaches 55dB, and input/output port all matches 50 Ω normal impedances.
Preferably, power distribution synthesis network in power model, is to be met by four tunnel synthesis multiple power amplifier chip are carried out power combing.
Preferably, No. four power dividers use planar microstrip structure, and the power combiner on Er tetra-tunnel uses waveguiding structure.
Compared with prior art, the invention has the beneficial effects as follows: Ka frequency range millimeter-wave power amplifiers belongs to a kind of millimetric wave device, it it is the requisite important component part of millimeter-wave systems high-power transmitter, can be widely applied in the communication systems such as Ka band communication satellite, radar, pass through power amplifier, thus improving the output of transmitter, a power amplifier of good performance is the guarantee forming high performance millimeter wave system.
Accompanying drawing explanation
Fig. 1 is Ka frequency range high power amplifier structural representation.
Fig. 2 is output stage amplifier stage four road power combining structures schematic diagram.
In figure: 1 gain amplification stage, 2 drive amplification levels, 3 output amplifier stages, 4 power dividers and 5 power combiners.
Detailed description of the invention
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is clearly and completely described, it is clear that described embodiment is only a part of embodiment of the present invention rather than whole embodiments.Based on the embodiment in the present invention, the every other embodiment that those of ordinary skill in the art are obtained under not making creative work premise, broadly fall into the scope of protection of the invention.
nullAs depicted in figs. 1 and 2，One millimeter-wave power amplifiers of the present invention，Including amplifier stage unit、Power combiner 5 and power divider 4，Amplifier stage unit is between power combiner 5 and power divider 4，Amplifier stage unit includes gain amplification stage 1、Drive amplification level 2 and output amplifier stage 3，Gain amplification stage 1、Drive amplification pole 2 and output amplifier stage 3 are sequentially connected with，The input signal of amplifier is-20dBm，After being then passed through gain amplification stage 1 and output amplifier stage 3 amplification，Output can reach 18dBm，Be then passed through is a final stage high power amplification chip，In 38-40GHz frequency band，Its peak power output is 30.8dBm(1.2W)，Final amplifier output power is 34.8dBm(3W)，The saturation output power of the power amplifier chip of single-stage does not reaches the design objective of requirement，Therefore must also introduce a power in the design of power model and distribute/synthesize network，Multiple power amplifier chip are carried out power combing，Here four tunnel synthesis have been selected to meet requirement，When selecting power to distribute/synthesize network，Miniaturization and the integration of integrated circuit are considered，Signal power in view of outfan is big，The feature of broader bandwidth，So using planar microstrip structure at No. four power dividers，The power combiner on Er tetra-tunnel uses waveguiding structure，This is because waveguiding structure has the feature of low-loss and high power capacity.
The preferred embodiment of the present invention is described in detail above in association with accompanying drawing; but; the present invention is not limited to the detail in above-mentioned embodiment; in the technology concept of the present invention; technical scheme can be carried out multiple simple variant, these simple variant belong to protection scope of the present invention.
It is further to note that, each concrete technical characteristic described in above-mentioned detailed description of the invention, in the case of reconcilable, can be combined by any suitable means, in order to avoid unnecessary repetition, various possible compound modes are illustrated by the present invention the most separately.
Additionally, can also carry out combination in any between the various different embodiment of the present invention, as long as it is without prejudice in the case of the thought of the present invention, it should be considered as content disclosed in this invention equally.
Claims (4)
1. a millimeter-wave power amplifiers, it is characterized in that: include amplifier stage unit, power combiner and power divider, described amplifier stage unit is between described power combiner and power divider, described amplifier stage unit includes gain amplification stage, drive amplification level and output amplifier stage, described gain amplification stage, drive amplification pole and output amplifier stage are sequentially connected with, the input signal of amplifier is-20dBm, after being then passed through gain amplification stage and output amplifier stage amplification, output reaches 18dBm, it is then passed through a final stage high power amplification chip, in 38-40GHz frequency band, peak power output is 30.8dBm, final amplifier output power is 34.8dBm.
A kind of millimeter-wave power amplifiers the most according to claim 1, it is characterised in that: described power amplifier operating frequency 38-40GHz, it is achieved power is output as 34.8dBm, gain reaches 55dB, and input/output port all matches 50 Ω normal impedances.
A kind of millimeter-wave power amplifiers the most according to claim 1, it is characterised in that: power distribution synthesis network in power model, is to be met by four tunnel synthesis multiple power amplifier chip are carried out power combing.
A kind of millimeter-wave power amplifiers the most according to claim 1, it is characterised in that: No. four power dividers use planar microstrip structure, and the power combiner on four tunnels uses waveguiding structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410831720.2A CN105811900A (en) | 2014-12-29 | 2014-12-29 | A millimeter wave power amplifier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410831720.2A CN105811900A (en) | 2014-12-29 | 2014-12-29 | A millimeter wave power amplifier |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105811900A true CN105811900A (en) | 2016-07-27 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410831720.2A Pending CN105811900A (en) | 2014-12-29 | 2014-12-29 | A millimeter wave power amplifier |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105811900A (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101515790A (en) * | 2009-04-03 | 2009-08-26 | 东南大学 | Millimeter wave band power amplifier based on flexible chip integrated wave guide technology |
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2014
- 2014-12-29 CN CN201410831720.2A patent/CN105811900A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101515790A (en) * | 2009-04-03 | 2009-08-26 | 东南大学 | Millimeter wave band power amplifier based on flexible chip integrated wave guide technology |
Non-Patent Citations (3)
| Title |
|---|
| 恽小华等: "一种基于双级支线功分/功合网络的毫米波固态功率放大器", 《电子学报》 * |
| 王芳: "Ka频段功率合成放大技术研究", 《中国优秀硕士学位论文全文数据库 信息科技辑》 * |
| 赵晨曦等: "毫米波10W空间功率合成放大器研制", 《红外与毫米波学报》 * |
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Application publication date: 20160727 |
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| WD01 | Invention patent application deemed withdrawn after publication |