CN105810546B - A kind of plasma processor of dielectric parameter continuously adjustabe - Google Patents
A kind of plasma processor of dielectric parameter continuously adjustabe Download PDFInfo
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- CN105810546B CN105810546B CN201410857133.0A CN201410857133A CN105810546B CN 105810546 B CN105810546 B CN 105810546B CN 201410857133 A CN201410857133 A CN 201410857133A CN 105810546 B CN105810546 B CN 105810546B
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- flexible pipe
- dielectric fluid
- dielectric
- plasma processor
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Abstract
A kind of plasma processor of dielectric parameter continuously adjustabe, including：Reaction chamber, reacting gas inlet duct at the top of reaction chamber, lower section is used for the pedestal for fixing substrate in reaction chamber, one radio-frequency power supply is connected to the electrode in the pedestal, one substrate holding apparatus is arranged on the pedestal, substrate is fixed on above the substrate holding apparatus, and an edge ring is around the substrate holding apparatus and above the electrode, it is characterised in that：The edge ring includes hollow circulating line, the outer pars intramuralis of circulating line include it is multiple up and down or inside and outside arrangement Telescopic flexible pipe；The multiple Telescopic flexible pipe is connected to dielectric fluid supply system by dielectric fluid input and output channel, and the different flexible pipes shared space proportion in the circulating line changes when wherein the control of dielectric fluid supply system flows into the hydraulic pressure change of different flexible pipes.
Description
Technical field
At technical field of manufacturing semiconductors, more particularly to a kind of dielectric parameter continuously adjustabe plasma
Manage device.
Background technology
As shown in figure 1, conventional plasma processing unit includes including a pedestal in a reaction chamber 100, reaction chamber
102, pedestal is interior to include bottom electrode.Include electrostatic chuck 34 above pedestal, pending substrate 30 is arranged on electrostatic chuck.One
Individual radio-frequency power supply is connected to the bottom electrode in pedestal 102 by an adaptation.Pedestal outer periphery include exhaust passage 20 with
Maintain the low pressure in plasma treatment appts.It is relative with pedestal at the top of reaction chamber also to pass through including a gas spray 60
Valve is connected to gas source 50, and gas spray is simultaneously also as the bottom electrode Capacitance Coupled in Top electrode and pedestal so that penetrate
Frequency power is applied to the field coupling of bottom electrode to Top electrode 60, and the reacting gas being passed through between upper/lower electrode is ionized by rf electric field
Form plasma and plasma treatment is carried out to substrate 30.Reaction chamber 100 is usually to be made up of conductor such as aluminium, and is electrically connected to
Earth terminal, so reaction chamber side wall can be also coupled to except that can be coupled to Top electrode by being applied to the rf electric field of bottom electrode.In order to
Regulation rf electric field is coupled to the Energy distribution between different conductor, while also regulation direction of an electric field is, it is necessary in pending substrate
30 periphery sets an edge ring 40, and the edge ring is also simultaneously around electrostatic chuck.Can by the material selection of edge ring 40
To improve the distribution of rf electric field, while the edge ring 40 there is a need for being able to be resistant to the long-term corrosion of plasma, so edge ring
Generally from ceramic materials such as SiC, Al2O3.But in same plasma reaction chamber pending substrate to carry out it is a variety of not
The processing technology of same parameter, the different processing technologys of correspondence need different plasma or Electric Field Distribution state.It is existing solid
Different processing technologys can not be tackled by determining the edge ring that material is made, and its Electric Field Distribution can only be compensated using other means can not
The problem of optimization is brought.Disclose and set in the position of edge ring in an annular for this prior art US20130008609
Storage has dielectric liquid in vacant duct, a container, is adjusted by changing the height for the liquid level for flowing into hollow pipeline
The dielectric constant that circulating line finally embodies.Although such method can adjust the dielectric constant of edge ring to a certain degree,
It is or there are problems：Dielectric liquid all first fills up hollow pipeline underlying space and extended up again, so needing
It is substantially empty above pipeline during the state for wanting dielectric constant relatively low, that is, dielectric constant is distributed on above-below direction in pipeline
It is uneven；The temperature of edge ring can be raised in plasma treatment, and the liquids and gases in hollow ring can be with temperature change
Volumetric expansion is, it is necessary to which high-precision TT＆C system just can guarantee that the liquid level of dielectric liquid is accurately controlled, so substantially can not
Accurate control dielectric constant；Dielectric fluid can only be single kind, and a variety of dielectric fluids can be mixed, once mixing very
It is difficult to be separated again in regulation and control next time, so the dielectric constant limited adjustment range that single dielectric fluid can reach.Except this it
Outside, the structure design in correlation technique causes dielectric fluid to be static in pipeline, it is impossible to flow, so also can not just take away
The heat produced in longtime running.
So plasma processor needs design is a kind of new to realize the adjustable mechanism of substrate edge dielectric constant or side
Method, it is possible to achieve on a large scale, spatially adjustable dielectric parameter control device.
The content of the invention
The problem of present invention is solved is that the dielectric constant for realizing substrate edge region can adjust on a large scale.The present invention provides one
The plasma processor of dielectric parameter continuously adjustabe is planted, including：Reaction chamber, the reacting gas air inlet dress at the top of reaction chamber
Put, lower section is used for the pedestal for fixing substrate in reaction chamber, a radio-frequency power supply is connected to the electrode in the pedestal, one
Substrate holding apparatus is arranged on the pedestal, and substrate is fixed on above the substrate holding apparatus, and an edge ring surrounds institute
State substrate holding apparatus and be characterized in that above the electrode：The edge ring includes a hollow circulating line,
The outer pars intramuralis of circulating line include it is multiple up and down or inside and outside arrangement Telescopic flexible pipe；The multiple Telescopic flexible pipe passes through electricity
Dielectric fluid is inputted and output channel is connected to dielectric fluid supply system, and wherein dielectric fluid supply system control flows into different soft
The different flexible pipes shared space proportion in the circulating line changes during the hydraulic pressure change of pipe.Wherein dielectric fluid is supplied
System is answered to supply different dielectric fluids to different flexible pipes.
The lower hose and a top flexible pipe that plurality of flexible pipe includes inside and outside arrangement are located above the lower hose.
Can also be that multiple flexible pipes include the lower hose of inside and outside arrangement and the top flexible pipe of inside and outside arrangement is located in the lower hose
Side.
The flexible pipe includes multistage arc hose end, and the multistage arc hose end constitutes annulus and surrounded around the substrate.
Each arc flexible pipe two ends are also inputted by respective dielectric be connected to the dielectric fluid supply system with output channel respectively
System.Dielectric fluid supply system supplies different dielectric fluids to different arc hose ends.
The ceramic material that circulating line of the present invention is corroded by resistant to plasma is made, the ceramic material be selected from SiC and
One of Al2O3.
Brief description of the drawings
Fig. 1 is the overall structure diagram of prior art plasma treatment appts；
Fig. 2 is plasma treatment appts edge ring profile of the present invention；
Fig. 3 is the top view of plasma treatment appts inner flexible tube of the present invention.
Embodiment
The invention solves the problems that the medium ion concentration distribution of plasma treatment appts and direction of an electric field dynamically adjustable can be asked
Topic, is improved to the edge ring 40 in prior art plasma processor overall structure figure as shown in Figure 1.
As shown in Fig. 2 edge ring 40 of the present invention includes a hollow circulating line 401, the outer wall of circulating line is by existing
There is ceramic material known to technology to be made, multiple expandable flexible pipes are included inside circulating line, below with shown in scheming
Illustrate the present invention exemplified by three flexible pipes 402,404,406.Hollow pipeline inner bottom part is accounted for including two parallel flexible pipes 404,406
According to lower space in pipeline 401, the internal upper part space of pipeline 401 is occupied for a flexible pipe 402 in the parallel top of flexible pipe 404,406,
The two ends of these flexible pipes are connected to multiple dielectric fluid storage tanks and the recovery of the dielectric fluid supply system of outside by interface
Pipeline, realizes the flowing of soft liquid in pipe, helps to take away the heat on pipeline 401.The liquid of flexible pipe is passed through by control
Pressure can cause the volume of flexible pipe to expand or shrink.As shown in Fig. 2 when the fluid pressure in flexible pipe 402,404,406
The space occupied when balanced in hollow pipeline 401 is approached, and the dielectric constant finally externally embodied is also similar to that three's dielectric
The average value of constant.Balance is finally reached when the fluid flow flowed through in flexible pipe 402 is significantly greater than the flow that flows through in 404,406
When flexible pipe 402 can occupy the space in most of pipeline 401, so the dielectric constant that finally embodies can be closer in flexible pipe 402
The dielectric constant of the first dielectric fluid flowed through.Same principle, it is whole when the fluid flow for flowing through 404 is more than other two
The dielectric constant that body hollow pipeline 401 embodies also can closer to the second dielectric fluid flowed through in flexible pipe 404 dielectric constant.It is logical
The regulation of liquid pressure and flow in different pipelines is crossed, the space body that different flexible pipes are occupied in circulating line 401 can be adjusted
Long-pending size, the overall dielectric constant of final regulation.Because these flexible pipes may be coupled to multiple different dielectric fluids
Storage tank, so a variety of dielectric fluids can be selected as needed, realizes large-scale dielectric constant regulation and such as shows without worry
There are different dielectric fluid mixed problems as technology.The present invention can using the dielectric fluid such as water, alcohol, each quasi-grease without
Worry occur the problem of mixing or reaction between different dielectric fluids.
Can be between difference flexible pipe of the invention distribution up and down (flexible pipe 402 and the 404/406 of lower section) can also according to from
The distance difference of substrate has inside and outside distribution (flexible pipe 404 and 406), so the regulative mode of dielectric liquid spatial distribution ratio is richer
It is rich various, it can be needed according to different processing technologys above and below in regulation circulating line, inside and outside dielectric constant is distributed.The present invention
The quantity of flexible pipe can also be more, and with the spatial distribution in more accurate regulation hollow pipeline, such as top also includes 2 flexible pipes
Deng.
Flexible pipe in the present invention can surround the circle of whole substrate, and liquid input and output port is set at two ends,
There can be multiple arcs section to combine.The top view of flexible pipe 402 is illustrated in figure 3, flexible pipe 402 is by circulating line 401
Side wall is surrounded, and wherein flexible pipe 402 includes two sections of semicircular flexible pipe 402a, 402b, and both, which mutually finish up, connects.402a includes one
It is defeated that individual dielectric liquid input 402a-in and output end a 402a-out, same 402b also include a dielectric liquid
Enter to hold 402b-in and output end 402b-out, wherein 402a-in is adjacent with 402b-out, wherein 402a-out and 402b-
In is adjacent.
Likewise, the flexible pipe 404,406 of lower section can also be divided into multiple arcs section, the starting point of these segmental arcs as needed
With terminal can it is corresponding with the 402 of top can also with 402 starting points, terminal staggered positions set.
402a and 402b may be coupled to identical dielectric fluid storage tank, can also be connected to different dielectric fluids and deposit
Storage tank, when being connected to different dielectric fluid storage tanks, by big to hydraulic pressure in different segmental arcs (such as 402a, 402b) flexible pipe
Small control, realizes the control of different flexible pipe volume ratios, further can individually control the corresponding substrate fan of different segmental arcs
The Electric Field Distribution in shape region.So the independent control being distributed to different sector region internal electric fields can be realized using the inventive method
System.
The flexible pipe of each in the present invention is connected to a dielectric fluid by respective dielectric fluid input and output side and supplied
System, by being fed to the parameters such as the dielectric of different flexible pipes composition also and hydraulic pressure in a control dielectric fluid supply system
The dielectric parameter in the regulation substrate edge region that can be integrated, the plasma treatment effect of substrate is improved so as to effective.
Although present disclosure is as above, the present invention is not limited to this.Any those skilled in the art, are not departing from this
In the spirit and scope of invention, it can make various changes or modifications, therefore protection scope of the present invention should be with claim institute
The scope of restriction is defined.
Claims (9)
1. a kind of plasma processor of dielectric parameter continuously adjustabe, including：Reaction chamber, the reacting gas at the top of reaction chamber
Inlet duct, lower section is used for the pedestal for fixing substrate in reaction chamber, and a radio-frequency power supply is connected to the electricity in the pedestal
Pole a, substrate holding apparatus is arranged on the pedestal, and substrate is fixed on above the substrate holding apparatus, an edge ring
Around the substrate holding apparatus and above the electrode, it is characterised in that：
The edge ring includes hollow circulating line, the outer pars intramuralis of circulating line include it is multiple up and down or inside and outside arrangement
Telescopic flexible pipe；
Multiple Telescopic flexible pipes are connected to dielectric fluid supply system by dielectric fluid input and output channel, wherein electricity
Different flexible pipes institute's duty in the circulating line when control of dielectric fluid supply system flows into the hydraulic pressure change of different flexible pipes
Between ratio change.
2. plasma processor as claimed in claim 1, it is characterised in that the dielectric fluid supply system supply is different
Dielectric fluid is to different flexible pipes.
3. plasma processor as claimed in claim 1, it is characterised in that the multiple flexible pipe includes the bottom of inside and outside arrangement
Flexible pipe and a top flexible pipe are located above the lower hose.
4. plasma processor as claimed in claim 1, it is characterised in that the bottom that the multiple flexible pipe includes inside and outside arrangement is soft
Pipe and the top flexible pipe of inside and outside arrangement are located above the lower hose.
5. plasma processor as claimed in claim 1, it is characterised in that the flexible pipe includes multistage arc hose end, institute
State multistage arc hose end and constitute annulus around the substrate.
6. plasma processor as claimed in claim 5, it is characterised in that each arc flexible pipe two ends are respectively by each
From dielectric fluid input and output channel be connected to the dielectric fluid supply system.
7. plasma processor as claimed in claim 6, it is characterised in that the dielectric fluid supply system is to different arcs
Shape hose end supplies different dielectric fluids.
8. plasma processor as claimed in claim 1, it is characterised in that the pottery that the circulating line is corroded by resistant to plasma
Ceramic material is made.
9. plasma processor as claimed in claim 8, it is characterised in that the ceramic material be selected from SiC and Al2O3 it
One.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410857133.0A CN105810546B (en) | 2014-12-30 | 2014-12-30 | A kind of plasma processor of dielectric parameter continuously adjustabe |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410857133.0A CN105810546B (en) | 2014-12-30 | 2014-12-30 | A kind of plasma processor of dielectric parameter continuously adjustabe |
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| Publication Number | Publication Date |
|---|---|
| CN105810546A CN105810546A (en) | 2016-07-27 |
| CN105810546B true CN105810546B (en) | 2017-10-13 |
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Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1909760A (en) * | 2005-08-05 | 2007-02-07 | 中微半导体设备(上海)有限公司 | Vacuum reaction chamber and processing method |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5317424B2 (en) * | 2007-03-28 | 2013-10-16 | 東京エレクトロン株式会社 | Plasma processing equipment |
| US8563619B2 (en) * | 2007-06-28 | 2013-10-22 | Lam Research Corporation | Methods and arrangements for plasma processing system with tunable capacitance |
| JP5548841B2 (en) * | 2008-01-16 | 2014-07-16 | チャーム エンジニアリング シーオー エルティーディー | Substrate processing equipment |
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Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1909760A (en) * | 2005-08-05 | 2007-02-07 | 中微半导体设备(上海)有限公司 | Vacuum reaction chamber and processing method |
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| CN105810546A (en) | 2016-07-27 |
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Address after: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee after: Medium and Micro Semiconductor Equipment (Shanghai) Co., Ltd. Address before: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee before: Advanced Micro-Fabrication Equipment (Shanghai) Inc. |
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