CN105806877A - Novel evaluation test method of long-term storage life of CMOS device - Google Patents
Novel evaluation test method of long-term storage life of CMOS device Download PDFInfo
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Abstract
The invention relates to a novel evaluation test method of the long-term storage life of a CMOS device. The novel evaluation test method is characterized in that three different high-temperature points are selected to perform accelerated storage life tests by using the normal-temperature storage data as the basis, the acceleration factors, relative to the normal-temperature conditions, of high-temperature storage conditions are obtained by comparing the high-temperature point data with the normal-temperature data, and the time of the high-temperature storage tests is obtained according to the acceleration factors. The method includes a normal-temperature storage life test, the high-temperature accelerated storage life tests of the three different high-temperature points and an effective calculation and evaluation method. The method has the advantages that the high-temperature accelerated storage life test data is successfully compared with the normal-temperature storage life data, the test results are subjected to least square fitting calculation, and accordingly the difficulties that traditional long-term storage life evaluation is high in time consumption, new products are designed while the old storage life tests are not finished, and the old products needs to be replaced are solved; long-term storage life evaluation time is shortened greatly, and evaluation cost is lowered.
Description
Technical field
The present invention relates to component element long period storage life evaluation test field, especially a kind of New-type CMOS long term device storage life evaluation test method.
Background technology
Civilian goods aspect, along with the fast development of electronic product, its application is more extensive.The application of some electronic product requires there is certain shelf life (3 years, 5 years or longer), and some equipment requirements lays in a certain amount of product and supporting electronic devices and components, and ensures normally to use at any time.The storage life of electronic devices and components is just proposed requirement by this.The research of the domestic storage life to electronic devices and components is existing to be reported, but is mostly limited to theory analysis.Along with the maturation of the development of market economy and technology, the effect to commercial product of evaluating of Long term storage life can not be ignored.
Military products aspect, Long term storage life requires more urgent, and modern military is equipped in must have certain deposit peacetime, the war skill performance that must remain intact in use after long storage periods.Therefore it is required that each components and parts of composition weaponry or module are respectively provided with higher long-term storage performance.Especially guided missile and military supplies electronic system etc. must adapt to long storage periods, at any time can use and can feature.Such as in the life cycle management process of guided missile, its most times are in stored condition.
If being evaluated test according to the condition depositing storage under product or weaponry room temperature normality, the product that the life-span is grown especially, this method is apparently not most suitable.Because it needs the test period that cost is very long, even having little time to finish life test, new product designs again, and old product will be eliminated.Therefore, the increasing stress formed on the basis of life test, the acceleration service life test method shortening the time instead of the life test method of routine gradually.
Summary of the invention
The technical problem to be solved in the present invention is to overcome existing defect, it is provided that a kind of New-type CMOS long term device storage life evaluation test method, can significantly shorten the evaluation test time.
In order to solve above-mentioned technical problem, the invention provides following technical scheme:
One New-type CMOS long term device storage life evaluation test method of the present invention, comprises the following steps:
(1) group experiment: four groups of samples are individually placed under a room temperature and three different high temperature and are accelerated storage life test, in process of the test not powered, four groups of samples are carried out routine test by process of the test respectively, during high temp samples test, sample need to recover to room temperature, record test data, calculate meansigma methods to key parameter；The hot test time is determined according to high temperature dot data and room temperature date comprision, after the test period that reaches a high temperature, proceeds test, then obtains two numbers of test points according to rear end test；
(2) evaluation methodology: based on room temperature data, choose three different high temperature dots and be accelerated storage life test, contrasted by high temperature dot data and room temperature data, obtain the accelerated factor of the relative storage at normal temperature condition of high temperature storage conditions, the hot test time is obtained according to accelerated factor, carrying out the Gatifloxacin sodium for injection of corresponding time under corresponding high temperature dot, result of the test is the intended result of the specific time limit storage life of room temperature；
(3) data calculate: set up Arrhenius acceleration model according to a key parameter, it is determined that accelerated factor, draw the corresponding relation of high temperature storage time and storage at normal temperature time；Take the statistical average test data as this point of each test point, test data are carried out least square fitting, obtains linear equation；The slope of the slope of high temperature dot data fitting equation Yu room temperature data fitting equation is compared, obtaining the accelerated factor of high temperature storage test correspondence storage at normal temperature test, the storage at normal temperature time obtains the test period of high temperature Gatifloxacin sodium for injection divided by accelerated factor.
Further, being individually placed to four groups of samples be accelerated storage life test under a room temperature and three different high temperature in step (1), each temperature spot is respectively chosen a number of sample and is tested.
Further, in step (1), a room temperature Gatifloxacin sodium for injection is to carry out storage test when room temperature storehouse, and three different high temperature Gatifloxacin sodium for injection are to utilize high-temperature cabinet to carry out carrying out storage test under three different hot conditionss.
Further, in step (1), routine test is the test utilizing test machine to carry out relevant parameter, and preserves test data.
Further, in step (3), least square fitting is the linear equation of multiple time points test data under same temperature point.
Beneficial effects of the present invention:
(1) adopt based on storage at normal temperature data, choose three different high temperature dots and be accelerated storage life test, contrasted by high temperature dot data and room temperature data, obtain the accelerated factor of the relative storage at normal temperature condition of high temperature storage conditions, the time of accelerated storage test is obtained according to accelerated factor, and test result is carried out least square fitting calculating, extrapolate the long storage periods time utilizing the equivalence of high temperature accelerated test, successfully solve tradition Long term storage life evaluation and expend time in a long difficult problem；
(2) method utilizing high temperature accelerated test method to evaluate Long term storage life is achieved, it is effectively shortened the Long term storage life evaluation test time, saves evaluation test cost, be successfully realized and at short notice component element long period storage life be made that effective evaluation.
Accompanying drawing explanation
Fig. 1 is the flow chart of New-type CMOS long term device storage life evaluation test method of the present invention；
Fig. 2 is room temperature 25 DEG C test data and curves and the least square fitting of New-type CMOS long term device storage life evaluation test method of the present invention；
Fig. 3 is high temperature 85 DEG C test data and curves and the least square fitting of New-type CMOS long term device storage life evaluation test method of the present invention；
Fig. 4 is 125 DEG C high temperature test data and curves and the least square fitting of New-type CMOS long term device storage life evaluation test method of the present invention；
Fig. 5 is high temperature 150 DEG C test data and curves and the least square fitting of New-type CMOS long term device storage life evaluation test method of the present invention；
The Arrhenius relationship data that Fig. 6 is New-type CMOS long term device storage life evaluation test method of the present invention process curve and least square fitting.
Detailed description of the invention
Embodiment cited by the present invention; it is only intended to help and understands the present invention; should not be construed as limiting the scope of the present invention; for those skilled in the art; without departing from the inventive concept of the premise; the present invention can also being improved and modify, these improve and modify in the scope also falling into the claims in the present invention protection.
1, evaluation test flow process
nullAs shown in Figure 1，Sample is individually placed under room temperature and high temperature and stores，Based on storage at normal temperature data (criterion)，Choose three different high temperature dots and be accelerated storage life test，Storage at normal temperature sample and high temperature storage sample are carried out routine test by process of the test respectively，Record room temperature data and three high temperature dot data，Carry out date comprision，Obtain the accelerated factor of the relative storage at normal temperature condition of high temperature storage conditions，The time (determining the hot test time) of accelerated storage test is obtained according to accelerated factor，The accelerated storage test (high temperature storage test) of corresponding time is carried out under corresponding high temperature dot，Arrhenius acceleration model is set up according to certain parameter，Checking high-temperature data，Test data differences with room temperature and continue with greatly accelerated storage experiment，Until data consistent，Result of the test is the intended result of room temperature specific time limit storage life.
One group of room temperature sample is placed at 25 DEG C, three groups of high temp samples are individually placed at 85 DEG C, 125 DEG C, 150 DEG C to be accelerated test, in process of the test not powered, process of the test carries out routine test according to test relevant regulations, during test, sample need to recover to room temperature, record test data, calculate meansigma methods to key parameter.Total time on test (hot test time) is determined according to high-temperature data and room temperature date comprision, after reaching total time on test, should proceed test, then obtain two numbers of test points according to rear end test.As high-temperature data and room temperature Data Comparison calculated the hot test time beyond 2 years, then the hot test time presses the calculating of 2 years by the longest, stops test after accomplishing for 2 years.
2, evaluation test requirement
Storage at normal temperature environmental requirement temperature is-10 DEG C～40 DEG C, and relative humidity is 20%RH～85%RH；Three high temperature storage temperature spots are 150 DEG C ± 5%, 125 DEG C ± 5%, 85 DEG C ± 5%；The components and parts that evaluation test is extracted should screen qualified products.The circuit quantity allotted of each temperature spot is in Table 1, and hookup quantity can be determined according to circuit characteristic, generally no less than 20.
Table 1 sample distributes
Test parameter is population parameter test, wherein IIH、IIL、Iq、VOH、VOL, Icc parameter be key parameter；Storage at normal temperature test interval is that every 336h (14 days) once tests；High temperature storage test interval is that every 336h (14 days) once tests；The test of high temperature storage test needs to carry out under components and parts return to room temperature, and recovery time is 24 hours.Test respectively when recovery time is 4h, 8h, 12h, 24h, and record data.It is not counted in recovery time in the high temperature storage test time.
3, evaluation test measured data processes and analyzes
3.1 single high temperature dot data process
Set up Arrhenius acceleration model according to certain parameter, it is determined that accelerated factor, draw the corresponding relation of high temperature storage time and storage at normal temperature time.Take the statistical average test data as this point of each test point, test data are carried out least square fitting, obtains linear equation.The slope of the slope of high-temperature data fit equation Yu room temperature data fitting equation is compared, obtaining the accelerated factor of high temperature storage test correspondence normal temperature storage test, the storage at normal temperature life-span (storage at normal temperature time) obtains the test period of high temperature accelerated storage test divided by accelerated factor.
For Parameters variation amount in each packet is maximum and parameter is closest to the components and parts of ultimate value, should individually be analyzed.With EXCEL software, data are processed.Wherein X-axis is set to period of storage, and Y-axis is set to test statistical average.
3.2 Arrhenius acceleration model data process
Going out lnt～1/T according to Arrhenius equation inference, be input in EXCEL by the test statistical average of three high temperature dots and period of storage, processing method processes with above-mentioned single temperature spot data.Go out to estimate the variable quantity of the storage time limit according to storage at normal temperature equation inference, record is issued to the test period t of room temperature variable quantity at three high temperature dots, it follows that lnt, draws 1/T according to three high temperature dots, lnt～1/T is input in EXCEL, carry out least square fitting, obtain fit equation, long storage periods time t=X is converted into lnt, substitute in fit equation, calculate T, if T is in storehouse storage requirement (-10 DEG C～40 DEG C) scope, then prove that data are believable.
3.3 test measured data analyses
A level conversion driving chip that what this test was chosen be civil area and military domain makes consumption all very big, chip model is JS16XX45, according to above-mentioned evaluation test flow process and evaluation test requirement, test at room temperature and three high temperature dots respectively, current test has carried out 150 days, now the quiescent current Iq under 3.3V voltage in test data having been carried out data statistics and analysis, measured data is as shown in table 2.
Table 2 quiescent current measured data unit: uA
| Temperature | 0 day | 15 days | 30 days | 45 days | 60 days |
| 25℃ | 26.951 | 29.618 | 30.211 | 28.836 | 31.568 |
| 85℃ | 28.745 | 30.412 | 30.835 | 29.46 | 31.467 |
| 125℃ | 29.43 | 30.915 | 31.698 | 30.833 | 31.061 |
| 150℃ | 32.213 | 35.631 | 34.339 | 34.34 | 36.835 |
Table 2 quiescent current measured data (Continued) unit: uA
| Temperature | 75 days | 105 days | 120 days | 135 days | 150 days |
| 25℃ | 32.503 | 37.558 | 39.587 | 42.49 | 45.362 |
| 85℃ | 32.956 | 38.404 | 39.304 | 45.341 | 49.275 |
| 125℃ | 34.615 | 39.05 | 42.287 | 47.439 | 51.869 |
| 150℃ | 42.695 | 42.886 | 45.769 | 50.615 | 55.796 |
According to measured data, and according to the method that single temperature spot data process, room temperature data and three high temperature dot data are carried out least square fitting, has obtained linear equation, data variation trendgram and least square fitting linear equation as shown in Figure 2-5.
The slope of three high temperature dot data fitting equations is compared with the slope of room temperature data fitting equation respectively, obtaining the accelerated factor of high temperature storage test correspondence storage at normal temperature test, the storage at normal temperature life-span (time) obtains the test period of high temperature accelerated storage test divided by accelerated factor.Measured result is as shown in table 3.
Table 3 accelerated factor and test used time
| Temperature | Accelerated factor | Test used time (year) |
| 25℃ | 1 | 15 |
| 85℃ | 1.0165 | 14.75 |
| 125℃ | 1.1326 | 13.24 |
| 150℃ | 1.1529 | 13.01 |
Go out lnt～1/T according to Arrhenius equation inference, obtain Arrhenius relationship data processed result as shown in table 4.
Table 4 Arrhenius relationship data processed result
| Temperature | Test used time (year) | ln(t) | 1/T 4 --> |
| 25℃ | 15 | 2.7081 | 0.04000 |
| 85℃ | 14.75 | 2.6916 | 0.01176 |
| 125℃ | 13.24 | 2.5835 | 0.00800 |
| 150℃ | 13.01 | 2.5658 | 0.00667 |
Lnt～1/T data are carried out least square fitting, obtains fit equation as shown in Figure 6.
Long storage periods time t=15 is converted into lnt, substitutes in fit equation, calculate temperature T, x=lnt=2.7081, y=0.1539x-0.3819=0.1539 × 2.7081-0.3819=0.03488, according to y=1/T, calculates temperature T=1/y=1/0.03488=28.67 DEG C.
According to Arrhenius relationship data processing rule, temperature T=28.67 DEG C in storehouse storage requirement (-10 DEG C～40 DEG C) scope, it was demonstrated that data are believable.
nullThe present invention is based on storage at normal temperature life-span (time) data，Choose three different high temperature dots and be accelerated storage life test，Contrasted by accelerated storage data (high temperature dot data) and room temperature data，Obtain the accelerated factor of the relative storage at normal temperature condition of high temperature storage conditions，The time (hot test time) of accelerated storage test is obtained according to accelerated factor，The method includes a storage at normal temperature life test、The high temperature Gatifloxacin sodium for injection of three different high temperature dots、One effective Calculation Estimation method，High temperature Gatifloxacin sodium for injection data and storage at normal temperature lifetime data are successfully compared by the method，And test result is carried out least square fitting calculating，Expend time in length thus solving tradition Long term storage life evaluation、Even have little time to finish life test，New product designs again，The difficult problem that old product will be eliminated，Substantially reduce Long term storage life evaluation time，Save evaluation cost.
Claims (5)
1. a New-type CMOS long term device storage life evaluation test method, it is characterised in that comprise the following steps:
(1) group experiment: four groups of samples are individually placed under a room temperature and three different high temperature and are accelerated storage life test, in process of the test not powered, four groups of samples are carried out routine test by process of the test respectively, during high temp samples test, sample need to recover to room temperature, record test data, calculate meansigma methods to key parameter；The hot test time is determined according to high temperature dot data and room temperature date comprision, after the test period that reaches a high temperature, proceeds test, then obtains two numbers of test points according to rear end test；
(2) evaluation methodology: based on room temperature data, choose three different high temperature dots and be accelerated storage life test, contrasted by high temperature dot data and room temperature data, obtain the accelerated factor of the relative storage at normal temperature condition of high temperature storage conditions, the hot test time is obtained according to accelerated factor, carrying out the Gatifloxacin sodium for injection of corresponding time under corresponding high temperature dot, result of the test is the intended result of the specific time limit storage life of room temperature；
(3) data calculate: set up Arrhenius acceleration model according to a key parameter, it is determined that accelerated factor, draw the corresponding relation of high temperature storage time and storage at normal temperature time；Take the statistical average test data as this point of each test point, test data are carried out least square fitting, obtains linear equation；The slope of the slope of high temperature dot data fitting equation Yu room temperature data fitting equation is compared, obtaining the accelerated factor of high temperature storage test correspondence storage at normal temperature test, the storage at normal temperature time obtains the test period of high temperature Gatifloxacin sodium for injection divided by accelerated factor.
2. New-type CMOS long term device storage life evaluation test method according to claim 1, it is characterized in that, being individually placed to four groups of samples in described step (1) be accelerated storage life test under a room temperature and three different high temperature, each temperature spot is respectively chosen a number of sample and is tested.
3. New-type CMOS long term device storage life evaluation test method according to claim 1, it is characterized in that, in described step (1), a room temperature Gatifloxacin sodium for injection is to carry out storage test when room temperature storehouse, and three different high temperature Gatifloxacin sodium for injection are to utilize high-temperature cabinet to carry out carrying out storage test under three different hot conditionss.
4. New-type CMOS long term device storage life evaluation test method according to claim 1, it is characterised in that in described step (1), routine test is the test utilizing test machine to carry out relevant parameter, and preserves test data.
5. New-type CMOS long term device storage life evaluation test method according to claim 1, it is characterised in that in described step (3), least square fitting is the linear equation of multiple time points test data under same temperature point.
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| CN109596667A (en) * | 2018-11-12 | 2019-04-09 | 襄阳宏伟航空器有限责任公司 | Material lifetime based on the Arrhenius Equation tests set temperature appraisal procedure |
| CN109725134A (en) * | 2017-10-27 | 2019-05-07 | 洛阳轴承研究所有限公司 | A kind of lubricating grease storage life prediction judgment method |
| CN111931390A (en) * | 2020-10-13 | 2020-11-13 | 中国人民解放军陆军装甲兵学院 | Parallel test method and system for equipment combat test full life cycle |
| CN112595656A (en) * | 2020-12-09 | 2021-04-02 | 中国兵器工业第五九研究所 | Testing device and evaluation method for adaptability of explosive device long-storage environment for bomb |
| CN114414463A (en) * | 2021-12-28 | 2022-04-29 | 北京遥感设备研究所 | Long-term storage stability verification method for aluminum-based composite material optical system |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106990011A (en) * | 2017-05-15 | 2017-07-28 | 中国人民解放军海军航空工程学院 | A kind of determination method of the temperature accelerated stress spectrum of accelerated life test |
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| CN111931390A (en) * | 2020-10-13 | 2020-11-13 | 中国人民解放军陆军装甲兵学院 | Parallel test method and system for equipment combat test full life cycle |
| CN112595656A (en) * | 2020-12-09 | 2021-04-02 | 中国兵器工业第五九研究所 | Testing device and evaluation method for adaptability of explosive device long-storage environment for bomb |
| CN112595656B (en) * | 2020-12-09 | 2022-05-27 | 中国兵器工业第五九研究所 | Testing device and evaluation method for adaptability of explosive device long-storage environment for bomb |
| CN114414463A (en) * | 2021-12-28 | 2022-04-29 | 北京遥感设备研究所 | Long-term storage stability verification method for aluminum-based composite material optical system |
| CN114414463B (en) * | 2021-12-28 | 2023-11-14 | 北京遥感设备研究所 | Long-term storage stability verification method for aluminum-based composite material optical system |
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