CN105789549A - Method for preparing electrode on two-dimensional material - Google Patents
Method for preparing electrode on two-dimensional material Download PDFInfo
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- CN105789549A CN105789549A CN201610261497.1A CN201610261497A CN105789549A CN 105789549 A CN105789549 A CN 105789549A CN 201610261497 A CN201610261497 A CN 201610261497A CN 105789549 A CN105789549 A CN 105789549A
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- 239000000463 material Substances 0.000 title claims abstract description 58
- 238000000034 method Methods 0.000 title claims abstract description 29
- 229920006254 polymer film Polymers 0.000 claims abstract description 19
- 229910052751 metal Inorganic materials 0.000 claims abstract description 9
- 239000002184 metal Substances 0.000 claims abstract description 9
- 239000000853 adhesive Substances 0.000 claims abstract description 8
- 230000001070 adhesive effect Effects 0.000 claims abstract description 8
- 239000002390 adhesive tape Substances 0.000 claims description 68
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 42
- 239000010408 film Substances 0.000 claims description 28
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 26
- 229910052681 coesite Inorganic materials 0.000 claims description 24
- 229910052906 cristobalite Inorganic materials 0.000 claims description 24
- 239000000377 silicon dioxide Substances 0.000 claims description 24
- 229910052682 stishovite Inorganic materials 0.000 claims description 24
- 229910052905 tridymite Inorganic materials 0.000 claims description 24
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 17
- 229910052750 molybdenum Inorganic materials 0.000 claims description 17
- 239000011733 molybdenum Substances 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 17
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 13
- 229910052737 gold Inorganic materials 0.000 claims description 13
- 239000010931 gold Substances 0.000 claims description 13
- 229910052759 nickel Inorganic materials 0.000 claims description 13
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 10
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 10
- 229910052802 copper Inorganic materials 0.000 claims description 10
- 239000010949 copper Substances 0.000 claims description 10
- 239000010936 titanium Substances 0.000 claims description 10
- 229910052719 titanium Inorganic materials 0.000 claims description 10
- 229910052582 BN Inorganic materials 0.000 claims description 8
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 8
- 229910021389 graphene Inorganic materials 0.000 claims description 8
- 230000003287 optical effect Effects 0.000 claims description 7
- ITRNXVSDJBHYNJ-UHFFFAOYSA-N tungsten disulfide Chemical compound S=[W]=S ITRNXVSDJBHYNJ-UHFFFAOYSA-N 0.000 claims description 7
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 6
- 229920000642 polymer Polymers 0.000 claims description 6
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 6
- 229920000915 polyvinyl chloride Polymers 0.000 claims description 6
- 239000004800 polyvinyl chloride Substances 0.000 claims description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 239000010409 thin film Substances 0.000 claims description 2
- 239000004408 titanium dioxide Substances 0.000 claims description 2
- 238000000151 deposition Methods 0.000 abstract description 4
- 230000001105 regulatory effect Effects 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 8
- 150000004032 porphyrins Chemical class 0.000 description 8
- 238000012546 transfer Methods 0.000 description 6
- 230000006378 damage Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 238000000313 electron-beam-induced deposition Methods 0.000 description 2
- 238000007737 ion beam deposition Methods 0.000 description 2
- 238000000233 ultraviolet lithography Methods 0.000 description 2
- 238000004026 adhesive bonding Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002372 labelling Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/04—Processes of manufacture in general
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
- H01G11/84—Processes for the manufacture of hybrid or EDL capacitors, or components thereof
- H01G11/86—Processes for the manufacture of hybrid or EDL capacitors, or components thereof specially adapted for electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/10—Energy storage using batteries
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
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Abstract
The invention discloses a simple, convenient and controllable method for preparing an electrode on a two-dimensional material, and belongs to the technical field of material science and electronics. The method comprises the steps of adhering a carrying net (3) onto the adhesive surface of a perforated tape (4); fixing a polymer film (5) onto the smooth surface of the tape (4); transferring the tape to a target position of the two-dimensional material (2) by utilizing a microcosmic operation hand and compacting the tape; depositing metal electrodes on the carrying net (3) and the two-dimensional material (2); removing the carrying net (3) by using forceps; and obtaining a micro-electrode (7) on the two-dimensional material (2). The method is low in device requirement, mild in condition and simple and convenient to operate; and the shape and size of the electrode can be conveniently regulated and controlled only by changing the type of the carrying net, so that the applicability is wide.
Description
Technical field
The invention belongs to material science and electronic technology field, relate to a kind of method preparing electrode in two-dimensional material that simplicity is controlled.
Background technology
The two-dimensional material such as Graphene, transition metal dichalcogenide, boron nitride, two-dimensional polymer cause the extensive concern of researcher because of the character of its uniqueness, are expected to be used widely in fields such as minicell, ultracapacitor, transistor, microelectronic components.Wherein, prepare electrode on two-dimensional material surface and be by the key of basic scientific research and practical application.But, two-dimensional material smaller, different, cause the preparation difficulty of microelectrode.At present, researcher prepares electrode mainly through micro-processing methods such as Ultraviolet lithography, means of electron beam deposition and focused ion beam deposition methods on two-dimensional material surface.Wherein, two-dimensional material through the techniques such as gluing, uv-exposure, development, etching, not only complex steps, and easily need to be damaged by Ultraviolet lithography.Means of electron beam deposition and focused ion beam deposition method can at the appointment position depositing electrodes of two-dimensional material, but equipment needed thereby is expensive, complex operation, consuming time longer, and easily two-dimensional polymer caused irradiation damage, affect performance characterization.Thus, this area need nonetheless remain for developing the method preparing electrode in two-dimensional material that the suitability of a kind of simplicity is wide.
Summary of the invention
The technical problem to be solved in the present invention is, overcome background technology Problems existing, a kind of method preparing electrode in two-dimensional material that simplicity is controlled is provided, for preparing, in the target location of various two-dimensional material, the microelectrode that shape and size are controlled, and avoid two-dimensional material causing damage and destroying in preparation process, applied widely, easy and simple to handle, consuming time short.
Concrete technical scheme is as follows:
A kind of method preparing electrode in two-dimensional material, has following steps:
1) two-dimensional material 2 is transferred to SiO2In/Si substrate 1；
2) adopting card punch to make a call to a diameter on adhesive tape 4 is the aperture of 1～2.5mm；
3) being bonded in the adhesive faces of adhesive tape 4 by load net 3, the central point wherein carrying net 3 overlaps with the central point of the aperture on adhesive tape 4；
4) being fixed on by thin polymer film 5 on the shiny surface of adhesive tape 4, the thickness of described thin polymer film 5 is 1～5mm；
5) by step 4) assembly of load net 3/ adhesive tape 4/ thin polymer film 5 that obtains is arranged on microtechnique microscope slide 6 on hand and utilizes microtechnique hands that assembly is transferred to step 1) in the target location of two-dimensional material 2, make assembly and compress towards two-dimensional material 2 with the side of load net 3；
6) by step 5) described in microtechnique hands slowly vertically pick up, and removing polymer thin film 5, at SiO2/ Si substrate 1 obtains covering the two-dimensional material 2 of load net 3 and adhesive tape 4；
7) metal electrode of deposition 50nm～200nm thickness in load net 3, adhesive tape 4 and two-dimensional material 2；
8) remove load net 3 and adhesive tape 4 with tweezers, two-dimensional material 2 obtains microelectrode 7.
In a kind of method preparing electrode in two-dimensional material of the present invention, the described preferred Graphene of two-dimensional material 2, molybdenum bisuphide, tungsten disulfide, titanium dioxide, boron nitride or two-dimensional polymer；Preferred 200nm × the 500nm of the two-dimensional～10cm × 10cm of described two-dimensional material, preferred 0.3nm～100 μm of thickness；Described SiO2SiO in/Si substrate 12The thickness preferably 100～500nm of layer；The described hole diameter on adhesive tape 4 is preferably 2mm.
In a kind of method preparing electrode in two-dimensional material of the present invention, described load net 3 can be copper mesh, nickel screen, gold net, titanium net or molybdenum net.
In a kind of method preparing electrode in two-dimensional material of the present invention, step 4) described in thin polymer film 5 is fixed on the shiny surface of adhesive tape 4, it is possible to use the adhesion between shiny surface and the thin polymer film 5 of adhesive tape 4 is fixing；The described preferred polydimethylsiloxanefilm film of thin polymer film 5, pet film, polymethyl methacrylate film or polyvinyl chloride film；The thickness of thin polymer film 5 is preferably 3mm.
In a kind of method preparing electrode in two-dimensional material of the present invention, step 5) can be operated under an optical microscope.
In the method preparing electrode in two-dimensional material that a kind of simplicity of the present invention is controlled, step 7) described in the preferred gold electrode of metal electrode, platinum electrode, tungsten electrode or nickel electrode；The preferred 100nm of thickness of metal electrode；The shape and size of metal electrode can by selecting different load nets to regulate and control.
Compared with prior art, the method have the advantages that
1, the inventive method is operated under an optical microscope, can be accurately positioned, at the appointment position depositing electrode of two-dimensional material.
2, the inventive method utilizes common evaporated device can realize the preparation of electrode, and equipment requirements is low, easy and simple to handle；And only by changing the kind of load net, shape and the size of electrode can be regulated and controled easily.
3, electrode adhesion prepared by electrode prepared by the method for the present invention is good, and contact resistance is little；Under the premise ensureing good electrode quality, operate under relatively mild condition and carry out, it is often more important that avoiding the damage to various two-dimensional material and destruction, the suitability is wide.
Accompanying drawing illustrates:
Fig. 1 is step 1 of the present invention) in two-dimensional material is transferred to SiO2The suprabasil optical microscope of/Si.
Fig. 2 is step 3 of the present invention) obtain with load net adhesive tape schematic diagram.
Fig. 3 is step 4 of the present invention) by fixing for adhesive tape structural representation on the polymer film.
Fig. 4 is step 5 of the present invention) the microscope slide schematic diagram after thin polymer film is installed.
Fig. 5 is step 5 of the present invention) schematic diagram that will transfer in two-dimensional material with load net and the thin polymer film of adhesive tape.
Fig. 6 is step 6 of the present invention) schematic diagram of two-dimensional material being coated with load net and adhesive tape that obtains.
Fig. 7 is step 7 of the present invention) two-dimensional material schematic diagram after deposit metal electrodes.
Fig. 8 is step 8 of the present invention) remove the two-dimensional material schematic diagram preparing microelectrode after load net.
Fig. 9 is the optical microscope that embodiment 1 prepares the two-dimensional material after microelectrode.
Accompanying drawing labelling in above-mentioned each figure is: 1 is SiO2/ Si substrate, 2 is two-dimensional material, and 3 is load net, and 4 is adhesive tape, and 5 is thin polymer film, and 6 is microscope slide, and 7 is microelectrode.
Detailed description of the invention
Below in conjunction with detailed description of the invention, the present invention is expanded on further.Should be understood that these embodiments are merely to illustrate the present invention rather than restriction the scope of the present invention.In addition, it is to be understood that after having read present disclosure, the present invention can be made various changes or modifications by those skilled in the art, these equivalent form of values fall within the application appended claims limited range equally.
Embodiment 1
1) poly-for two dimension porphyrin is transferred to SiO2(300nm) (note: 300nm refers to SiO in/Si substrate2Thickness, this place's bracket inner digital of following embodiment all represents SiO2Thickness), referring to accompanying drawing 1.In the present embodiment, two-dimensional material 2 is the poly-porphyrin of two dimension.By the optical microscope of Fig. 1 it can be seen that be about 5 μ m 50 μm in the two-dimentional size gathering porphyrin within sweep of the eye, thickness is 4nm；
2) card punch is adopted to punch on adhesive tape, it is thus achieved that being with foraminate adhesive tape, the diameter of aperture is 2mm；
3) copper mesh of 2000 orders is fixed on step 2) in the adhesive faces with foraminate adhesive tape that obtains, obtain the adhesive tape of copper mesh with 2000 orders, wherein the central point of copper mesh overlaps with the central point of aperture；
4) by step 3) shiny surface with the adhesive tape of the copper mesh of 2000 orders that obtains is fixed in polydimethylsiloxanefilm film, and the thickness of polydimethylsiloxanefilm film is 2mm；
5) through step 4) obtain with copper mesh and the polydimethylsiloxanefilm film of adhesive tape be arranged on microtechnique microscope slide on hand and utilize microtechnique hands to transfer them to step 1) in SiO2(300nm) the suprabasil two dimension of/Si is gathered the target location of porphyrin and compresses；
6) microtechnique hands is slowly vertically picked up, and remove polydimethylsiloxanefilm film, at SiO2(300nm)/Si substrate obtains covering the poly-porphyrin of two dimension of copper mesh and adhesive tape；
7) on the poly-porphyrin of copper mesh, adhesive tape and two dimension, deposit thickness is the gold electrode of 100nm；
8) after having deposited electrode, remove copper mesh and adhesive tape with tweezers, the poly-porphyrin of two dimension obtains microelectrode.Its optical microscope is as shown in Figure 9, as can be seen from the figure the microelectrode prepared by the method for the present invention is clearly clearly demarcated, and electrode quality is higher, and after having deposited gold electrode, the poly-porphyrin pattern of two dimension is intact, illustrates that two-dimensional material is not caused damage and destroys by the method for the present invention.
Embodiment 2
1) Graphene is transferred to SiO2(200nm) in/Si substrate；
2) card punch is adopted to punch on adhesive tape, it is thus achieved that being with foraminate adhesive tape, the diameter of aperture is 1.5mm；
3) nickel screen of 1000 orders is fixed on step 2) in the adhesive faces with foraminate adhesive tape that obtains, obtain the adhesive tape of nickel screen with 1000 orders, wherein the central point of nickel screen overlaps with the central point of aperture；
4) by step 3) shiny surface with the adhesive tape of the nickel screen of 1000 orders that obtains is fixed on pet film, and the thickness of pet film is 3mm；
5) through step 4) obtain with nickel screen and the pet film of adhesive tape be arranged on microtechnique microscope slide on hand and utilize microtechnique hands to transfer them to step 1) in SiO2(200nm) target location of the suprabasil Graphene of/Si also compresses；
6) microtechnique hands is slowly vertically picked up, remove pet film, at SiO2(200nm)/Si substrate obtains covering the Graphene of nickel screen and adhesive tape；
7) on nickel screen, adhesive tape and Graphene, deposit thickness is the platinum electrode of 150nm；
8) remove nickel screen and adhesive tape with tweezers after having deposited electrode, Graphene obtains microelectrode.
Embodiment 3
1) molybdenum bisuphide is transferred to SiO2(500nm) in/Si substrate；
2) card punch is adopted to punch on adhesive tape, it is thus achieved that being with foraminate adhesive tape, the diameter of aperture is 2.5mm；
3) the titanium net of 800 orders is fixed on step 2) in the adhesive faces with foraminate adhesive tape that obtains, obtain the adhesive tape of the titanium net with 800 orders, wherein the central point of titanium net overlaps with the central point of aperture；
4) by step 3) shiny surface with the adhesive tape of the titanium net of 800 orders that obtains is fixed on polymethyl methacrylate film, and the thickness of polymethyl methacrylate film is 4mm；
5) through step 4) obtain with titanium net and the polymethyl methacrylate film of adhesive tape be arranged on microtechnique microscope slide on hand and utilize microtechnique hands to transfer them to step 1) in SiO2(500nm) target location of the suprabasil molybdenum bisuphide of/Si also compresses；
6) microtechnique hands is slowly vertically picked up, remove polymethyl methacrylate film, at SiO2(500nm)/Si substrate obtains covering the molybdenum bisuphide of titanium net and adhesive tape；
7) on titanium net, adhesive tape and molybdenum bisuphide, deposit thickness is the tungsten electrode of 50nm；
8) after having deposited electrode, remove titanium net and adhesive tape with tweezers, molybdenum bisuphide obtains microelectrode.
Embodiment 4
1) boron nitride is transferred to SiO2(100nm) in/Si substrate；
2) card punch is adopted to punch on adhesive tape, it is thus achieved that being with foraminate adhesive tape, the diameter of aperture is 1mm；
3) the golden net of 1500 orders is fixed on step 2) in the adhesive faces with foraminate adhesive tape that obtains, obtain the adhesive tape of the gold net with 1500 orders, wherein the central point of gold net overlaps with the central point of aperture；
4) by step 3) shiny surface of adhesive tape with the gold net of 1500 orders that obtains is fixed on polyvinyl chloride film, and the thickness of polyvinyl chloride film is 1mm；
5) through step 4) obtain with golden net and the polyvinyl chloride film of adhesive tape be arranged on microtechnique microscope slide on hand and utilize microtechnique hands to transfer them to step 1) in SiO2(100nm) target location of the suprabasil boron nitride of/Si also compresses；
6) microtechnique hands is slowly vertically picked up, remove polyvinyl chloride film, at SiO2(100nm)/Si substrate obtains covering the boron nitride of gold net；
7) on gold net, adhesive tape and boron nitride, deposit thickness is the nickel electrode of 200nm；
8) remove gold net and adhesive tape after having deposited electrode with tweezers, boron nitride obtains microelectrode.
Embodiment 5
1) tungsten disulfide is transferred to SiO2(400nm) in/Si substrate；
2) card punch is adopted to punch on adhesive tape, it is thus achieved that being with foraminate adhesive tape, the diameter of aperture is 2mm；
3) molybdenum net is fixed on step 2) in the adhesive faces with foraminate adhesive tape that obtains, obtain the adhesive tape with molybdenum net, wherein the central point of molybdenum net overlaps with the central point of aperture；
4) by step 3) shiny surface with the adhesive tape of molybdenum net that obtains is fixed in polydimethylsiloxanefilm film, and the thickness of polydimethylsiloxanefilm film is 5mm；
5) through step 4) polydimethylsiloxanefilm film with molybdenum net and adhesive tape that obtains is arranged on microtechnique microscope slide on hand and utilizes microtechnique hands to transfer them to step 1) in SiO2(400nm) target location of the suprabasil tungsten disulfide of/Si also compresses；
6) microtechnique hands is slowly vertically picked up, remove polydimethylsiloxanefilm film, at SiO2(400nm)/Si substrate obtains covering the tungsten disulfide of molybdenum net；
7) on molybdenum net and tungsten disulfide, deposit thickness is the gold electrode of 100nm；
8) remove molybdenum net with tweezers after having deposited electrode, tungsten disulfide obtains microelectrode.
It should be noted that, diagram provided by the invention only sets forth the basic structure phase of the present invention in a schematic manner, therefore diagram only shows assembly relevant in the present invention but not component count when implementing, shape and size drafting according to reality, during its actual enforcement, the kenel of each assembly, quantity and ratio can arbitrarily change, and its assembly layout kenel is likely to increasingly complex.
Claims (6)
1. the method preparing electrode in two-dimensional material, has following steps:
1) two-dimensional material (2) is transferred to SiO2In/Si substrate (1)；
2) adopting card punch above to make a call to a diameter at adhesive tape (4) is the aperture of 1～2.5mm；
3) being bonded in the adhesive faces of adhesive tape (4) by load net (3), the central point of the central point and the aperture on adhesive tape (4) that wherein carry net (3) overlaps；
4) being fixed on the shiny surface of adhesive tape (4) by thin polymer film (5), the thickness of described thin polymer film (5) is 1～5mm；
5) by step 4) to be arranged on microtechnique microscope slide (6) on hand upper and utilize microtechnique hands that assembly is transferred to step 1 for the assembly of load net (3)/adhesive tape (4)/thin polymer film (5) that obtains) in the target location of two-dimensional material (2), make assembly and compress towards two-dimensional material (2) with the side of load net (3)；
6) by step 5) described in microtechnique hands slowly vertically pick up, and removing polymer thin film (5), at SiO2/ Si substrate (1) obtains covering the two-dimensional material (2) of load net (3) and adhesive tape (4)；
7) in load net (3) adhesive tape (4) and two-dimensional material (2), deposit the metal electrode of 50nm～200nm thickness；
8) remove load net (3) and adhesive tape (4) with tweezers, two-dimensional material (2) obtains microelectrode (7).
2. a kind of method preparing electrode in two-dimensional material according to claim 1, it is characterised in that described two-dimensional material (2) is Graphene, molybdenum bisuphide, tungsten disulfide, titanium dioxide, boron nitride or two-dimensional polymer；The two-dimensional of described two-dimensional material is 200nm × 500nm～10cm × 10cm, and thickness is 0.3nm～100 μm；Described SiO2SiO in/Si substrate (1)2The thickness of layer is 100～500nm；The described hole diameter on adhesive tape (4) is 2mm.
3. a kind of method preparing electrode in two-dimensional material according to claim 1, it is characterised in that described load net (3) is copper mesh, nickel screen, gold net, titanium net or molybdenum net.
4. a kind of method preparing electrode in two-dimensional material according to claim 1, it is characterized in that, step 4) described in thin polymer film (5) is fixed on the shiny surface of adhesive tape (4), be utilize adhesion between the shiny surface of adhesive tape (4) and thin polymer film (5) fixing；Described thin polymer film (5) is polydimethylsiloxanefilm film, pet film, polymethyl methacrylate film or polyvinyl chloride film；The thickness of thin polymer film (5) is 3mm.
5. a kind of method preparing electrode in two-dimensional material according to claim 1, it is characterised in that step 5) it is operated under an optical microscope.
6. according to the arbitrary a kind of described method preparing electrode in two-dimensional material of Claims 1 to 5, it is characterised in that step 7) described in metal electrode be gold electrode, platinum electrode, tungsten electrode or nickel electrode；The thickness of metal electrode is 100nm.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201610261497.1A CN105789549B (en) | 2016-04-25 | 2016-04-25 | A method of preparing electrode in two-dimensional material |
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| CN201610261497.1A CN105789549B (en) | 2016-04-25 | 2016-04-25 | A method of preparing electrode in two-dimensional material |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107230615A (en) * | 2017-05-08 | 2017-10-03 | 南京大学 | A kind of preparation method of Graphene electrodes |
| CN107946188A (en) * | 2017-10-24 | 2018-04-20 | 华东师范大学 | A kind of high accuracy micro-nano size two-dimensional material electrodes preparation method |
| CN107994099A (en) * | 2017-11-23 | 2018-05-04 | 西北工业大学 | Based on two-dimentional gallium selenide material field-effect transistor preparation method |
| CN109065258A (en) * | 2018-07-23 | 2018-12-21 | 华东师范大学 | A method of preparing metal electrode in two-dimensional material |
| CN110767377A (en) * | 2019-10-15 | 2020-02-07 | 北京理工大学 | Method for accurately manufacturing microelectrode by using oxygen-poor two-dimensional thin-layer material |
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| CN110767377A (en) * | 2019-10-15 | 2020-02-07 | 北京理工大学 | Method for accurately manufacturing microelectrode by using oxygen-poor two-dimensional thin-layer material |
| CN113755827A (en) * | 2021-08-23 | 2021-12-07 | 上海纳米技术及应用国家工程研究中心有限公司 | Preparation method of ultrathin molybdenum disulfide crystal nanocomposite taking titanium mesh as substrate, product and application |
| CN114203541A (en) * | 2021-11-26 | 2022-03-18 | 华中科技大学 | Method for transferring metal electrode to two-dimensional material |
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