CN105789398B - Perovskite LED and preparation method using ZnO nano fence net network as electron injecting layer - Google Patents
Perovskite LED and preparation method using ZnO nano fence net network as electron injecting layer Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
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- Engineering & Computer Science (AREA)
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Abstract
The present invention provides a kind of perovskite LED and preparation method using ZnO nano fence net network as electron injecting layer, the generation of leakage current in device can effectively be limited, the probability that non-radiative recombination occurs for carrier is reduced, the preparation of high external quantum efficiency perovskite green light LED is finally realized.The perovskite LED includes ZnO nano fence net network, the CH that n-type is sequentially provided with the substrate of electrically conducting transparent, substrate3NH3PbBr3Luminescent layer, the hole of p-type provide layer and electrode.The present invention limits the diffusion of solvent seasoning stage perovskite precursor liquid using its nm wall network architecture, CH is lifted with this by the use of two-dimentional ZnO nano fence net network as the electron injecting layer of perovskite green light LED3NH3PbBr3The surface coverage of luminescent layer.Traditional perovskite LED can be overcome the shortcomings of, the generation passage of leakage current in device is effectively suppressed, so as to promote the high efficiency radiation recombination of carrier under electrical pumping.
Description
Technical field
The invention belongs to technical field of semiconductor luminescence, and in particular to one kind is used as electronics using ZnO nano fence net network
Perovskite green light LED of implanted layer and preparation method thereof.
Background technology
Organic/inorganic composite perofskite material (CH3NH3PbX3, X=Cl/Br/I) and there is direct band gap, high interior quantum effect
Rate, luminescence spectrum are narrow, preparing cost, low, and bandwidth compatible with flexible substrate is excellent from blue light near infrared region continuously adjustabe etc.
Good feature, it has started to cause the extensive concern of people in the potential application of light emitting device field.However, being currently based on perovskite
The luminescent device research of material is only in initial stage, has many factors to limit perovskite LED carrying in luminous efficiency
Rise, the problems such as the lifting of the optimum choice of such as carrier injection layer and calcium titanium ore bed coverage rate.
Generally, in structure perovskite (calcium titanium ore bed is grown on electron injecting layer) LED is just put, appropriate electronic implanted layer
Selection it is extremely important.In addition to ensureing the efficient injection of electronics, the pattern of electron injecting layer can also directly affect perovskite
The film forming growing state of layer.If the film forming of calcium titanium ore bed is poor, its relatively low surface coverage will inevitably lead to
The generation of device creepage, so as to add the probability that non-radiative recombination occurs for carrier so that the luminous efficiency of device declines.
In the device architecture reported, researcher is passed through frequently with mesoporous TiO2Material provides layer to increase as electronics
Surface coverage (M.Z.Liu, M.B.Johnston, the and H.J.Snaith, Nature 501,3959 of perovskite thin film
(2013)；H.Zhou,Q.Chen,G.Li,S.Luo,T.B.Song,H.S.Duan,Z.Hong,J.You,Y.Liu,and
Y.Yang, Science 345,542 (2014)), see frame structure to limit the growth course of perovskite material using its Jie, this
Planting mesoporous material helps to form the calcium titanium ore bed that crystallite dimension is small but coverage rate is bigger.Due to and TiO2What material was closer to
Electron affinity, the ZnO with more high electron mobility is more suitable for providing materials application in perovskite LED system as electronics
It is standby.
Also have the advantages that mature preparation process, structure and morphology be abundant, conductive characteristic is good in view of ZnO material, if
The ZnO structures of certain special appearance can have advantage in terms of perovskite coverage rate lifting, then it is used as electron injecting layer
Meaning is self-evident.
The content of the invention
The purpose of the present invention is to be used as electronics using ZnO nano fence net network there is provided one kind for above-mentioned the deficiencies in the prior art
Perovskite LED of implanted layer and preparation method thereof, can effectively limit the generation of leakage current in device, and reduction carrier occurs non-
The probability of radiation recombination, finally realizes the preparation of high external quantum efficiency perovskite green light LED.
The technical proposal of the invention is realized in this way：A kind of calcium titanium using ZnO nano fence net network as electron injecting layer
Ore deposit LED, includes ZnO nano fence net network, the CH that n-type is sequentially provided with the substrate of electrically conducting transparent, substrate3NH3PbBr3Luminescent layer, p
The hole of type provides layer and electrode.
The substrate of the electrically conducting transparent is ITO the or FTO Conducting Glass that thickness is 120~140 nanometers, its resistivity
For 10-3~10-4Ohmcm.
The thickness of ZnO nano fence net network is 300~550 nanometers, the pore size surrounded by adjacent nano wall for 20~
120 nanometers, thickness of wall body is 30~150 nanometers.
CH3NH3PbBr3The thickness of luminescent layer is 80~130 nanometers, CH3NH3PbBr3Nanocrystalline grain size is in luminescent layer
30~100 nanometers.
It is inorganic Ni O semi-conducting materials or Spiro-OMeTAD that the hole of p-type, which provides layer,；Its thickness is received for 100~150
Rice.
A kind of preparation method of perovskite LED using ZnO nano fence net network as electron injecting layer, its step is as follows：
(1) substrate of electrically conducting transparent is cleaned；
(2) mocvd method is used in the ZnO nano fence net network of substrate Epitaxial growth n-type；
(3) CH is prepared on the ZnO nano fence net network of n-type using low temperature solution polycondensation3NH3PbBr3Luminescent layer；
(4) in CH3NH3PbBr3The hole that p-type is prepared on luminescent layer provides layer；
(5) provided using thermal evaporation in the hole of p-type and circular semitransparent electrode is prepared on layer.
It is preferred that, the mocvd method of the ZnO nano fence net network of n-type prepares and uses two-step growth method in step (2).
It is preferred that, step (3) CH3NH3PbBr3The preparation of luminescent layer is a step low temperature solution polycondensation or two step low temperature solution polycondensations.
It is preferred that, the hole of p-type is provided layer and prepared using magnetron sputtering method in step (4), and sputter temperature is 80~120
DEG C, Spiro-OMeTAD materials are prepared using low temperature solution polycondensation.
The present invention utilizes its nm wall by the use of two-dimentional ZnO nano fence net network as the electron injecting layer of perovskite green light LED
Network architecture limits the diffusion of solvent seasoning stage perovskite precursor liquid, and CH is lifted with this3NH3PbBr3The table of luminescent layer
Face coverage rate.The structure design can overcome the shortcomings of traditional perovskite LED, have to the generation passage of leakage current in device
Effect suppresses, so as to promote the high efficiency radiation recombination of carrier under electrical pumping, this is to high external quantum efficiency perovskite green light LED
Design and preparation have important directive significance.
Brief description of the drawings
In order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
There is the accompanying drawing used required in technology description to be briefly described, it should be apparent that, drawings in the following description are only this
Some embodiments of invention, for those of ordinary skill in the art, on the premise of not paying creative work, can be with
Other accompanying drawings are obtained according to these accompanying drawings.
Fig. 1 is the structural representation of perovskite green light LED of the present invention.
Fig. 2 is the electron scanning micrograph of the ZnO nano fence net network of two-dimentional n-type in embodiment 1.
Fig. 3 is CH in embodiment 13NH3PbBr3Luminescent layer electron scanning micrograph.
Fig. 4 is CH in embodiment 23NH3PbBr3Luminescent layer electron scanning micrograph；
Fig. 5 is that the luminous intensity of the perovskite green light LED for preparing under different electric currents compares in embodiment 1,2,3 and 4.
The external quantum efficiency of perovskite green light LEDs of the Fig. 6 to be prepared in embodiment 1,2,3 and 4 compares.
Wherein：1. substrate, the ZnO nano fence net network of 2.n types, 3.CH3NH3PbBr3Luminescent layer, the hole of 4.p types is provided
Layer, 5. electrodes.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Site preparation is described, it is clear that described embodiment is only a part of embodiment of the invention, rather than whole embodiments.It is based on
Embodiment in the present invention, it is every other that those of ordinary skill in the art are obtained under the premise of creative work is not paid
Embodiment, belongs to the scope of protection of the invention.
As shown in figure 1, a kind of perovskite LED using ZnO nano fence net network as electron injecting layer, including electrically conducting transparent
ZnO nano fence net network 2, the CH of n-type are sequentially provided with substrate 1, substrate 13NH3PbBr3Luminescent layer 3, p-type hole provide layer 4 with
And electrode 5.
The present invention limits solvent seasoning stage perovskite forerunner using bottom ZnO two-dimensional nano wall network architecture
The diffusion of liquid, perovskite luminescent layer (CH is lifted with this3NH3PbBr3) surface coverage so that effectively limitation device in leak electricity
The probability of non-radiative recombination occurs for the generation of stream, reduction carrier, finally realizes high external quantum efficiency perovskite green light LED system
It is standby.
The substrate 1 of the electrically conducting transparent is ITO the or FTO Conducting Glass that thickness is 120~140 nanometers, its resistance
Rate is 10-3~10-4Ohmcm.
The thickness of ZnO nano fence net network 2 is 300~550 nanometers, the pore size surrounded by adjacent nano wall for 20~
120 nanometers, thickness of wall body is 30~150 nanometers.
CH3NH3PbBr3The thickness of luminescent layer 3 is 80~130 nanometers, CH3NH3PbBr3Nanocrystalline grain size in luminescent layer 3
For 30~100 nanometers.
It is inorganic Ni O semi-conducting materials or Spiro-OMeTAD that the hole of p-type, which provides layer 4,；Its thickness is received for 100~150
Rice.
A kind of preparation method of perovskite LED using ZnO nano fence net network as electron injecting layer, its step is as follows：
(1) substrate 1 of electrically conducting transparent is cleaned；
(2) using the ZnO nano fence net network 2 of mocvd method epitaxial growth n-type on substrate 1；
(3) CH is prepared on the ZnO nano fence net network 2 of n-type using low temperature solution polycondensation3NH3PbBr3Luminescent layer 3；
(4) in CH3NH3PbBr3The hole that p-type is prepared on luminescent layer 3 provides layer 4；
(5) provided using thermal evaporation in the hole of p-type on layer 4 and prepare circular translucent electrode 5.
It is preferred that, the mocvd method of the ZnO nano fence net network 2 of n-type prepares and uses two-step growth method in step (2).
Step (3) CH3NH3PbBr3The preparation of luminescent layer 3 is a step low temperature solution polycondensation or two step low temperature solution polycondensations.
The hole of p-type is provided layer 4 and prepared using magnetron sputtering method in step (4), and sputter temperature is 80~120 DEG C,
Spiro-OMeTAD materials are prepared using low temperature solution polycondensation.
Describe the specific embodiment of the present invention in detail below in conjunction with technical scheme and accompanying drawing.
Embodiment 1
1) required 20 millimeters × 20 millimeters are cut into as substrate 1 using the ito glass of commercial electrically conducting transparent
Square, is then carried out Chemical cleaning, and specific cleaning step is：
Washing 15 minutes in cleaning essence (vertical person who is not a member of any political party's liquid detergent) are placed the substrate in first, then rinse dry with running water
Only；Then respectively it is cleaned by ultrasonic 10 minutes with acetone and ethanol solution successively, recycling is once；Rinsed well afterwards with deionized water
Afterwards, it is stand-by after being dried up through high pure nitrogen.
2) ito glass after cleaning is put on the graphite pallet of MOCVD (vapour deposition) reative cell, using two-step growth
The ZnO nano fence net network 2 that method grows the n-type of two dimension is used as LED electron injecting layer.Specific growth conditions is as follows：
In the first step, the input quantity in zinc source is per minute for 6.5 micromoles, and the input quantity of oxygen source is per minute for 8.0 mMs,
Growth temperature is 380 DEG C, and reaction pressure is 80 Pascals, and growth time is 3 minutes；
In second step, the input quantity in zinc source is per minute for 8.1 micromoles, and the input quantity of oxygen source is per minute for 8.0 mMs,
Growth temperature is 580 DEG C, and reaction pressure is 1080 Pascals, and growth time is 30 minutes.In second step growth course, use
Trimethyl gallium is as doped source, and by mixing, a small amount of gallium is conductive come the n-type for realizing ZnO nano fence net network.Gallium bottle temperature in a steady stream
It is set to -10 DEG C, the output molal quantity in gallium source per minute is 0.06 micromole, the electronics of prepared n-type ZnO nano fence net network
Concentration is 1.9 × 1019cm-3。
Fig. 2 is the electron scanning micrograph of two-dimentional ZnO nano fence net network.
3) CH is prepared using a step solwution method3NH3PbBr3Luminescent layer 3, is comprised the following steps that：
First by 0.395 gram of CH3NH3Br (Aldrich boards) and 1.15 grams of PbBr2The mixing of (Aldrich boards) powder is molten
In 2 milliliters of dimethyl formamide solution, stirred 10 hours under the conditions of 70 DEG C with magnetic stirring apparatus；Then in inert gas
In the glove box of protection, the mixed solution prepared is uniformly spin-coated on the ZnO nano fence net network 2 of n-type with the mode of spin coating,
Spincoating conditions are 2000 rpms, and the time is 30 seconds；Finally the sample after spin coating is made annealing treatment in glove box, moved back
Fiery temperature is 100 DEG C, and the time is 15 minutes.Fig. 3 is the CH prepared using one-step method3NH3PbBr3The scanning electron microscopy of film 3
Mirror photo.
4) by the complete CH of spin coating3NH3PbBr3The sample of luminescent layer 3 is positioned in magnetron sputtering cavity, complete using radio-frequency power supply
The sputtering of layer is provided into p-type NiO holes, concretely comprised the following steps：
NiO is installed:LiO2Ceramic target (mass fraction：Li2O:NiO=1.04:98.96%), by between target and substrate
Position adjustment is to 8 centimetres；Mechanical pump is opened, sputter chamber is vacuumized, after chamber vacuum degree is less than 10 Pascal, opens and divides
Sub- pump continues to vacuumize, until chamber vacuum degree is less than 3.0 × 10-3Pascal；Be passed through into cavity appropriate high-purity argon gas and
Oxygen, adjusts the flow proportional of the two to 5:1 so that the pressure of cavity is stable in 1.0 Pascals；Radio frequency source is opened, by its work(
Rate is set as 130 watts, and underlayer temperature is set as into 120 DEG C, and sputtering time is set as 0.5 hour.Prepared p-type NiO is thin
The thickness of film is 120 nanometers, and hole concentration is 3.5 × 1018cm-3。
5) Au is deposited on the surface of p-type Ni (Mg) O films 4 using thermal evaporation and the special mask plate of combination and is used as contact
Electrode, the shape of electrode 5 is a diameter of 2 millimeters of circle, and its thickness is 45 nanometers.Embodiment 2：
1) substrate 1 is used as using the ito glass of commercial electrically conducting transparent.To the cleaning of ito glass substrate in the present embodiment
Method and embodiment 1 are identical.
2) the ZnO nano fence net network 2 of the n-type of the Epitaxial growth of ito glass substrate 1 two dimension after cleaning is used as LED's
Electronics provides layer.The method and embodiment 1 that the two-dimentional ZnO nano fence net network 2 of n-type is obtained in the present embodiment are identical.
3) CH is prepared using two step solwution methods3NH3PbBr3Luminescent layer 3, is comprised the following steps that：
First by 1.15 grams of PbBr2It is 1 mole every that (Aldrich boards) powder, which is dissolved in configuration concentration in dimethylformamide,
The solution risen, stirred with magnetic stirring apparatus under the conditions of 70 DEG C 3 hours it is standby；By 0.395 gram of CH3NH3Br (Aldrich boards)
Configuration concentration is 10 milligrams every milliliter of solution for standby in powder isopropanol；In the glove box of inert gas shielding, it will prepare
Good PbBr2Solution is uniformly spin-coated on ZnO electronics offer layer 2 with the mode of spin coating and prepares PbBr2Film, spincoating conditions are
2000 rpms, the time is 30 seconds, and the sample after spin coating is made annealing treatment in glove box, and annealing temperature is 100
DEG C, the time is 10 minutes；After sample temperature is down to room temperature, 200 microlitres of CH is taken with liquid-transfering gun3NH3Br solution drops in sample table
Face, and carry out spin-coat process by 2000 rpms, 30 seconds of parameter with the method for spin coating；After spin coating terminates, sample is carried out
Annealing, annealing temperature is 100 DEG C, and the time is 15 minutes.
Fig. 4 is the CH prepared using two-step method3NH3PbBr3The electron scanning micrograph of film 3.
4) in the complete CH of spin coating3NH3PbBr3The sputtering that p-type NiO holes provide layer is carried out on the sample of luminescent layer 3.This implementation
The sputtering condition and embodiment 1 of p-type NiO holes offer layer are identical in example.
5) finally, the surface deposition Au using thermal evaporation in p-type NiO films is used as electrode 5.The technical process of the part
It is identical with preparation parameter and embodiment 1.
This example and embodiment 1 except that, CH3NH3PbBr3The preparation of luminescent layer 3 is completed using two step solwution methods,
So can be by controlling every layer of spincoating conditions to CH3NH3PbBr3The shape characteristic of luminescent layer 3 is regulated and controled.
Embodiment 3：
This example and embodiment 1 except that, calcium titanium is used as using small molecule hole transport material Spiro-OMeTAD
The p-type hole of ore deposit green light LED provides layer 4, and preparation method is solution spin-coating method, is concretely comprised the following steps：
In the glove box of inert gas shielding, 0.4 milliliter of acetonitrile is taken to be mixed with 4 milliliters of chlorobenzenes, and successively by 136 millis
Mole every liter of Spiro-OMeTAD (Cong of 2,2 ', 7,7 '-four [N, N- bis- (4- methoxyphenyls) amino] -9,9 '-spiral shell two),
110 mMs every liter of tert .-butylpyridine and 18 mMs every liter of Li-TFSI (two (trimethyl fluoride sulfonyl) lithiums) are added to mixed
Close in solution, configure Spiro-OMeTAD solution；Then it is the mode of the Spiro-OMeTAD solution spin coatings configured is equal
It is even to be spin-coated on CH3NH3PbBr3On luminescent layer 3, spincoating conditions are 5000 rpms, and the time is 45 seconds, and right in glove box
Sample after spin coating is made annealing treatment, and annealing temperature is 70 DEG C, and the time is 25 minutes.Prepared p-type Spiro-OMeTAD
The thickness of film 4 is 100 nanometers.The equal be the same as Example 1 of step of preparation process of other each layer films.
This embodiment is characterized in that CH3NH3PbBr3Luminescent layer 3 and p-type Spiro-OMeTAD holes provide layer can be lazy
Disposably completed in the glove box of property gas shield, the simple short preparation period of technique reduces the material in device fabrication process
Pollution.
Embodiment 4：
This example and embodiment 1 except that, substrate 1 is used as using the FTO glass of commercial electrically conducting transparent.FTO is thin
The thickness of layer is 130 nanometers, and resistivity is 2.7 × 10-3Ohmcm.To the cleaning side of FTO glass substrates in the present embodiment
Method and embodiment 1 are identical, and the preparation technology and preparation parameter and embodiment 1 of other each layer films are identical.
This embodiment is characterized in that reducing the system of prepared perovskite green light LED by the use of FTO electro-conductive glass as substrate
Standby cost.
Fig. 5 is luminous intensity contrast of the prepared device in embodiment 1,2,3,4 under different Injection Currents, now device
Au electrodes in part connect the negative pole of the positive pole of dc source, ITO or FTO layers of connection power supply.Because four devices are shown
Positioned at the green emission of 530 rans, each device is contrasted by being integrated processing to the luminous spectrum under same current
Luminous intensity.From fig. 5, it is seen that due to the difference of layers of material characteristic in device architecture, the luminous intensity of four devices
There is obvious difference.
Fig. 6 is that the external quantum efficiency of prepared device in embodiment 1,2,3,4 compares.From the figure, it can be seen that embodiment 3
In prepared perovskite green light LED there is the outer amount of prepared device in highest external quantum efficiency (0.17%), embodiment 4
Sub- efficiency is taken second place (0.13%), and the external quantum efficiency of prepared perovskite green light LED is relatively low in embodiment 2
(0.03%).
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all essences in the present invention
God is with principle, and any modification, equivalent substitution and improvements made etc. should be included in the scope of the protection.
Claims (6)
1. a kind of perovskite LED using ZnO nano fence net network as electron injecting layer, includes the substrate of electrically conducting transparent（1）, it is special
Levy and be：Substrate（1）On be sequentially provided with the ZnO nano fence net network of n-type（2）、CH3NH3PbBr3Luminescent layer（3）, p-type hole carry
For layer（4）And electrode（5）；The substrate of the electrically conducting transparent（1）It is ITO the or FTO electro-conductive glass that thickness is 120 ~ 140 nanometers
Substrate, its resistivity is 10-3~10-4Ohmcm, the ZnO nano fence net network of n-type（2）It is by MOCVD two-step growth methods
Prepare.
2. the perovskite LED according to claim 1 using ZnO nano fence net network as electron injecting layer, it is characterised in that：
ZnO nano fence net network（2）Thickness be 300 ~ 550 nanometers, the pore size surrounded by adjacent nano wall is 20 ~ 120 nanometers,
Thickness of wall body is 30 ~ 150 nanometers.
3. the perovskite LED according to claim 1 using ZnO nano fence net network as electron injecting layer, it is characterised in that：
CH3NH3PbBr3Luminescent layer（3）Thickness be 80 ~ 130 nanometers, CH3NH3PbBr3Luminescent layer（3）Middle nanocrystalline grain size be 30 ~
100 nanometers.
4. the perovskite LED according to claim 1 using ZnO nano fence net network as electron injecting layer, it is characterised in that：
The hole of p-type provides layer（4）For inorganic Ni O semi-conducting materials or Spiro-OMeTAD；Its thickness is 100 ~ 150 nanometers.
5. the preparation method of perovskite LED using ZnO nano fence net network as electron injecting layer a kind of, it is characterised in that be according to
What following step was carried out：
（1）Clean the substrate of electrically conducting transparent（1）, the substrate of the electrically conducting transparent（1）Be thickness be 120 ~ 140 nanometers ITO or
FTO Conducting Glass, its resistivity is 10-3~10-4Ohmcm；
（2）Using MOCVD two-step growth methods in substrate（1）The ZnO nano fence net network of Epitaxial growth n-type（2）It is used as LED electricity
Sub- implanted layer, specific growth conditions is as follows：In the first step, the input quantity in zinc source is per minute for 6.5 micromoles, the input quantity of oxygen source
Per minute for 8.0 mMs, growth temperature is 380 DEG C, and reaction pressure is 80 Pascals, and growth time is 3 minutes；Second step
In, the input quantity in zinc source is per minute for 8.1 micromoles, and the input quantity of oxygen source is per minute for 8.0 mMs, and growth temperature is 580
DEG C, reaction pressure is 1080 Pascals, and growth time is 30 minutes；In second step growth course, using trimethyl gallium conduct
Doped source, by mixing, a small amount of gallium is conductive come the n-type for realizing ZnO nano fence net network, and bottle temperature setting is -10 DEG C to gallium in a steady stream,
The output molal quantity in gallium source per minute is 0.06 micromole, the electron concentration of prepared n-type ZnO nano fence net network for 1.9 ×
1019cm-3；
（3）Using low temperature solution polycondensation n-type ZnO nano fence net network（2）Upper preparation CH3NH3PbBr3Luminescent layer（3）；
（4）In CH3NH3PbBr3Luminescent layer（3）The upper hole for preparing p-type provides layer（4）；
（5）Using thermal evaporation layer is provided in the hole of p-type（4）It is upper to prepare circular semitransparent electrode（5）.
6. the preparation method of the perovskite LED using ZnO nano fence net network as electron injecting layer described in claim 5, it is special
Levy and be：Step（3）Middle CH3NH3PbBr3Luminescent layer（3）Preparation be a step low temperature solution polycondensation or two step low temperature solution polycondensations.
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