CN105789254A - AMOLED pixel structure and manufacturing method of AMOLED light-emitting layer - Google Patents
AMOLED pixel structure and manufacturing method of AMOLED light-emitting layer Download PDFInfo
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
- H10K59/353—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels characterised by the geometrical arrangement of the RGB subpixels
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
Abstract
The invention provides an AMOLED pixel structure and a manufacturing method of an AMOLED light-emitting layer. The AMOLED pixel structure comprises plurality of pixel units, wherein the plurality of pixel units are arranged in an array; each pixel unit comprises a red sub-pixel, a green sub-pixel, a blue sub-pixel and a white sub-pixel, which are arranged in a shape like a Chinese character 'tian'; each red sub-pixel and corresponding green sub-pixel are located in the same row; each blue sub-pixel and corresponding white sub-pixel are located in the same row; each blue sub-pixel is located at the left side of the corresponding white sub-pixel; upper and lower two sub-pixels adjacent to each white sub-pixel are different in color; and a white light-emitting layer is formed by superimposing a red light-emitting layer, a green light-emitting layer and a blue light-emitting layer. An opening of a mask plate adopted when the pixel structure is manufactured corresponds to the white sub-pixels and to-be-evaporated color sub-pixels, so that the opening of the mask plate can be increased; the opening blocking of the mask plate is reduced; and the manufacturing yield of an AMOLED is improved.
Description
Technical field
The present invention relates to Display Technique field, particularly relate to a kind of AMOLED dot structure and AMOLED luminescent layer manufacture method.
Background technology
Organic LED display device (OrganicLightEmittingDisplay, OLED) have self-luminous, driving voltage is low, luminous efficiency is high, response time is short, definition and contrast 180 ° of visual angles high, nearly, use temperature range width, the plurality of advantages such as Flexible Displays and large area total colouring can be realized, be known as the display device being there is development potentiality most by industry.
OLED can be divided into passive matrix OLED (PassiveMatrixOLED according to type of drive, and active array type OLED (ActiveMatrixOLED PMOLED), AMOLED) two big class, namely direct addressin and film transistor matrix address two classes.Wherein, AMOLED has the pixel of arrangement in array, belongs to actively display type, and luminous efficacy is high, is typically used as the large scale display device of fine definition.
AMOLED generally includes: substrate, the anode being located on substrate, the hole injection layer being located on anode, the hole transmission layer being located on hole injection layer, the luminescent layer being located on hole transmission layer, the electron transfer layer being located on luminescent layer, the electron injecting layer being located on electron transfer layer and be located at the negative electrode on electron injecting layer.The principle of luminosity of OLED display device be semi-conducting material and luminous organic material under electric field driven, injected and composite guide photoluminescence by carrier.Concrete, OLED display device generally adopts ITO pixel electrode and metal electrode respectively as the anode of device and negative electrode, under certain voltage drives, electronics and hole are injected into electron transfer layer and hole transmission layer respectively from negative electrode and anode, electronics and hole move to luminescent layer respectively through electron transfer layer and hole transmission layer, and meet in luminescent layer, form exciton and make light emitting molecule excite, the latter sends visible ray through radiative relaxation.
Wherein, luminescent layer includes again multiple sub-pixel being arranged in array, every a line sub-pixel all includes being repeated in the red sub-pixel of arrangement, green sub-pixels and blue subpixels, voltage anode and negative electrode between corresponding by controlling red sub-pixel, green sub-pixels and blue subpixels, so that red sub-pixel, green sub-pixels and blue subpixels send the HONGGUANG of corresponding brightness, green glow and blue light, form required color.
In prior art, for preparing above-mentioned AMOLED luminescent layer, need to adopt three high accuracy metal mask plate (FineMetalMask, FMM) evaporation operation is deposited with red light emitting layer, blue light-emitting layer and blue light-emitting layer respectively, thus position corresponding on substrate forms red sub-pixel, green sub-pixels and blue subpixels.Specifically, described high-precision metal mask plate is provided with blocked area and multiple opening, when being deposited with the luminescent layer of one of which color, described blocked area correspondence shelters from substrate the position of other two kinds of color sub-pixels corresponding, and described opening correspondence exposes on substrate should the position of color sub-pixels to be deposited.Along with the pixel quantity (pixelsperinch having per square inch in screen, ppi) more and more, area corresponding to single sub-pixel is more and more less, cause that the opening of mask plate is also more and more less, the difficulty of processing causing not only mask plate is very big, and owing to the opening of mask plate is less, it is easy to cause that the opening of mask plate is blocked in evaporation process, thus causing AMOLED that line defect and mixed color phenomenon occur, quality is caused to decline.
Summary of the invention
It is an object of the invention to provide a kind of AMOLED dot structure, this dot structure can pass through the bigger mask plate of opening and make, and reduces the opening blocking of mask plate, it is to avoid line defect and mixed color phenomenon occurs in AMOLED, improves the making yield of AMOLED.
The present invention also aims to AMOLED luminescent layer manufacture method, it is possible to increase the opening of mask plate, reduce the opening blocking of mask plate, it is to avoid line defect and mixed color phenomenon occurs in AMOLED, improves the making yield of AMOLED.
For achieving the above object, the invention provides a kind of AMOLED dot structure, including: multiple pixel cells of arrangement in array, each pixel cell all includes: red sub-pixel, green sub-pixels, blue subpixels and white sub-pixels；
In each pixel cell, described red sub-pixel, green sub-pixels, blue subpixels and white sub-pixels are Tian-shaped arrangement, and described red sub-pixel and green sub-pixels are positioned at same a line, and described blue subpixels and white sub-pixels are positioned at same a line；Described red sub-pixel and green sub-pixels are positioned at above described blue subpixels and white sub-pixels, and described blue subpixels is positioned at the left side of described white sub-pixels；
In the pixel cell that each two is adjacent, the red sub-pixel of a pixel cell is positioned at the left side of green sub-pixels, and the red sub-pixel of one other pixel unit is positioned at the right side of green sub-pixels；
Described red sub-pixel has red light emitting layer, and green sub-pixels has green light emitting layer, and blue subpixels has blue light-emitting layer, and white sub-pixels has the white light-emitting layer formed by red light emitting layer, green light emitting layer and blue light-emitting layer superposition.
Described white light-emitting layer includes the red light emitting layer, green light emitting layer and the blue light-emitting layer that stack gradually from bottom to top.
The shape of described red sub-pixel, green sub-pixels, blue subpixels and white sub-pixels is rectangle.
The area equation of described red sub-pixel, green sub-pixels, blue subpixels and white sub-pixels.
One AMOLED luminescent layer manufacture method of the present invention, comprises the steps:
Step 1, provide a substrate, including: multiple pixel regions of arrangement in array, each pixel region all includes: red subpixel areas, green subpixel areas, blue subpixel areas and white sub-pixels region；
In each pixel region, described red subpixel areas, green subpixel areas, blue subpixel areas and white sub-pixels region are Tian-shaped arrangement, described red subpixel areas and green subpixel areas are positioned at same a line, and described blue subpixel areas and white sub-pixels region are positioned at same a line；Described red subpixel areas and green subpixel areas are positioned at described blue subpixel areas and white sub-pixels overlying regions, and described blue subpixel areas is positioned at the left side in described white sub-pixels region；
In the pixel region that each two is adjacent, the red subpixel areas of a pixel region is positioned at the left side of green subpixel areas, and the red subpixel areas in one other pixel region is positioned at the right side of green subpixel areas；
Step 2, offer red illuminating material, green luminescent material and blue emitting material, be deposited with, respectively through red mask plate, green mask plate and blue mask plate, the white light-emitting layer forming red light emitting layer, green light emitting layer, blue light-emitting layer and being formed by red light emitting layer, green light emitting layer and blue light-emitting layer superposition on substrate；
Red subpixel areas and the white sub-pixels region of the described corresponding described substrate of red mask plate are provided with opening；Green subpixel areas and the white sub-pixels region of the corresponding described substrate of described green mask plate are provided with opening；Blue subpixel areas and the white sub-pixels region of the described corresponding described substrate of blue mask plate are provided with opening.
On described red mask plate, the size of each opening is equal to the area sum of two red subpixel areas and two white sub-pixels regions；On described green mask plate, the size of each opening is equal to the area sum of two green subpixel areas and two white sub-pixels regions；On described blue mask plate, the size of each opening is equal to the area sum of two blue subpixel areas and two white sub-pixels regions.
The shape in described red subpixel areas, green subpixel areas, blue subpixel areas and white sub-pixels region is rectangle.
The area equation in described red subpixel areas, green subpixel areas, blue subpixel areas and white sub-pixels region.
In described step 2, the production order of red light emitting layer, green light emitting layer and blue light-emitting layer is followed successively by red light emitting layer, green light emitting layer and blue light-emitting layer, and described white light-emitting layer includes the red light emitting layer, green light emitting layer and the blue light-emitting layer that stack gradually from bottom to top.
Described red mask plate, green mask plate and blue mask plate are high-precision metal mask plate.
nullBeneficial effects of the present invention: the invention provides a kind of AMOLED dot structure，Including: multiple pixel cells of arrangement in array，Each pixel cell all includes the red sub-pixel of arrangement in Tian-shaped、Green sub-pixels、Blue subpixels、And white sub-pixels，Wherein，Red sub-pixel and green sub-pixels are positioned at same a line，Blue subpixels and white sub-pixels are positioned at same a line，Blue subpixels is positioned at the left side of described white sub-pixels，Up and down two sub-pixel colors adjacent from white sub-pixels are different，And pass through red light emitting layer、Green light emitting layer、And blue light-emitting layer superposition forms white light-emitting layer，The opening correspondence white sub-pixels of the mask plate that this dot structure adopts when making and color sub-pixels to be deposited，Mask plate compared to prior art split shed district only corresponding solid color sub-pixel，The opening of the mask plate adopted in the present invention enlarges markedly，Thus reducing the opening blocking of mask plate，Avoid AMOLED that line defect and mixed color phenomenon occur，Promote the making yield of AMOLED.The present invention also provides for a kind of AMOLED luminescent layer manufacture method, it is possible to increase the opening of mask plate, reduces the opening blocking of mask plate, it is to avoid line defect and mixed color phenomenon occurs in AMOLED, improves the making yield of AMOLED.
Accompanying drawing explanation
In order to be able to be further understood that inventive feature and technology contents, refer to the detailed description below in connection with the present invention and accompanying drawing, but accompanying drawing only provides reference and use is described, be not used for the present invention is any limitation as.
In accompanying drawing,
Fig. 1 is the schematic diagram of the AMOLED dot structure of the present invention；
Fig. 2 is the schematic flow diagram of the AMOLED luminescent layer manufacture method of the present invention；
Fig. 3 is the schematic diagram of the step 1 of the AMOLED luminescent layer manufacture method of the present invention；
Fig. 4 is the structural representation of the red mask plate that the step 2 of the AMOLED luminescent layer manufacture method of the present invention adopts；
Fig. 5 is the structural representation of the green mask plate that the step 2 of the AMOLED luminescent layer manufacture method of the present invention adopts；
Fig. 6 is the structural representation of the blue mask plate that the step 2 of the AMOLED luminescent layer manufacture method of the present invention adopts.
Detailed description of the invention
For further setting forth the technological means and effect thereof that the present invention takes, it is described in detail below in conjunction with the preferred embodiments of the present invention and accompanying drawing thereof.
Refer to Fig. 1, present invention firstly provides a kind of AMOLED dot structure, including: multiple pixel cells 10 of arrangement in array, each pixel cell 10 all includes: red sub-pixel R, green sub-pixels G, blue subpixels B and white sub-pixels W；
In each pixel cell 10, described red sub-pixel R, green sub-pixels G, blue subpixels B and white sub-pixels W are Tian-shaped arrangement, described red sub-pixel R and green sub-pixels G is positioned at same a line, and described blue subpixels B and white sub-pixels W is positioned at same a line；Described red sub-pixel R and green sub-pixels G is positioned at above described blue subpixels B and white sub-pixels W, and described blue subpixels B is positioned at the left side of described white sub-pixels W；
In the pixel cell 10 that each two is adjacent, the red sub-pixel R of a pixel cell 10 is positioned at the left side of green sub-pixels G, and the red sub-pixel R of one other pixel unit 10 is positioned at the right side of green sub-pixels G；
Described red sub-pixel R has red light emitting layer, and green sub-pixels G has green light emitting layer, and blue subpixels B has blue light-emitting layer, and white sub-pixels W has the white light-emitting layer formed by red light emitting layer, green light emitting layer and blue light-emitting layer superposition.
Especially, above-mentioned AMOLED dot structure is when being deposited with red light emitting layer, and on its mask plate adopted, the size of an opening is equal to the area sum of two red sub-pixel R and two white sub-pixels W；When being deposited with green light emitting layer, the size of the opening area sum equal to two green sub-pixels G and two white sub-pixels W on its mask plate adopted；When being deposited with blue light-emitting layer, the size of the opening area sum equal to two blue subpixels B and two white sub-pixels W on its mask plate adopted；Mask plate compared to prior art split shed district only corresponding solid color sub-pixel, the opening of the mask plate adopted in the present invention enlarges markedly, thus reducing the opening blocking of mask plate, it is to avoid line defect and mixed color phenomenon occurs in AMOLED, promotes the making yield of AMOLED.Meanwhile, corresponding for white sub-pixels W white light-emitting layer is formed by stacking by red light emitting layer, green light emitting layer and blue light-emitting layer, it is not necessary to increases evaporation processing procedure, can complete the making of white sub-pixels W.
Specifically, red light emitting layer in described white light-emitting layer, green light emitting layer, and the order of blue light-emitting layer superposition does not limit, such as: be followed successively by red light emitting layer from bottom to top, green light emitting layer, and blue light-emitting layer, or it is followed successively by red light emitting layer from bottom to top, blue light-emitting layer, and green light emitting layer, or it is followed successively by green light emitting layer from bottom to top, red light emitting layer, and blue light-emitting layer, or it is followed successively by green light emitting layer from bottom to top, blue light-emitting layer, and red light emitting layer, or it is followed successively by blue light-emitting layer from bottom to top, red light emitting layer, and green light emitting layer, or it is followed successively by blue light-emitting layer from bottom to top, green light emitting layer, and red light emitting layer.Sequencing when described red light emitting layer, green light emitting layer and blue light-emitting layer overlay order from bottom to top is made by described red light emitting layer, green light emitting layer and blue light-emitting layer determines.
Preferably, described red sub-pixel R, green sub-pixels G, blue subpixels B and white sub-pixels W shape be rectangle.Described red sub-pixel R, green sub-pixels G, blue subpixels B and white sub-pixels W area equation.
Referring to Fig. 2, the present invention also provides for a kind of AMOLED luminescent layer manufacture method, comprises the steps:
Step 1, as shown in Figure 3, one substrate 1 is provided, including: multiple pixel regions 10 ' of arrangement in array, each pixel region 10 ' all includes: red subpixel areas R ', green subpixel areas G ', blue subpixel areas B ' and white sub-pixels region W '；
In each pixel region 10 ', described red subpixel areas R ', green subpixel areas G ', blue subpixel areas B ' and white sub-pixels region W ' arrange in Tian-shaped, described red subpixel areas R ' and green subpixel areas G ' is positioned at same a line, and described blue subpixel areas B ' and white sub-pixels region W ' is positioned at same a line；Described red subpixel areas R ' and green subpixel areas G ' is positioned at described blue subpixel areas B ' and white sub-pixels region W ' top, and described blue subpixel areas B ' is positioned at the left side of described white sub-pixels region W '；
In the pixel region 10 ' that each two is adjacent, the red subpixel areas R ' of a pixel region 10 ' is positioned at the left side of green subpixel areas G ', and the red subpixel areas R ' in one other pixel region 10 ' is positioned at the right side of green subpixel areas G '.
Especially, the position one_to_one corresponding of the red sub-pixel R in the position of the red subpixel areas R ' in aforesaid substrate 1, green subpixel areas G ', blue subpixel areas B ' and white sub-pixels region W ' and the dot structure shown in Fig. 1, green sub-pixels G, blue subpixels B and white sub-pixels W.Preferably, the shape of described red subpixel areas R ', green subpixel areas G ', blue subpixel areas B ' and white sub-pixels region W ' is rectangle；The area equation of described red subpixel areas R ', green subpixel areas G ', blue subpixel areas B ' and white sub-pixels region W '.
Step 2, as Figure 4-Figure 6, red illuminating material, green luminescent material and blue emitting material are provided, are deposited with, respectively through red mask plate 2, green mask plate 3 and blue mask plate 4, the white light-emitting layer forming red light emitting layer, green light emitting layer, blue light-emitting layer and being formed by red light emitting layer, green light emitting layer and blue light-emitting layer superposition on substrate 1；
The red subpixel areas R ' and white sub-pixels region W ' of the described red corresponding described substrate 1 of mask plate 2 are provided with opening；The green subpixel areas G ' and white sub-pixels region W ' of the corresponding described substrate 1 of described green mask plate 3 are provided with opening；The blue subpixel areas B ' and white sub-pixels region W ' of the described blue corresponding described substrate 1 of mask plate 4 are provided with opening.
Specifically, described red light emitting layer is formed at the red subpixel areas R ' on described substrate 1 and white sub-pixels region W ', described green light emitting layer is formed at the green subpixel areas G ' on described substrate 1 and white sub-pixels region W ', and described blue light-emitting layer is formed at the blue subpixel areas B ' on described substrate 1 and white sub-pixels region W '.
Further, the size of each opening area sum equal to two red subpixel areas R ' and two white sub-pixels region W ' on described red mask plate 2；The size of each opening area sum equal to two green subpixel areas G ' and two white sub-pixels region W ' on described green mask plate 3；The size of each opening area sum equal to two blue subpixel areas B ' and two white sub-pixels region W ' on described blue mask plate 4；Mask plate compared to prior art split shed district only corresponding solid color sub-pixel, the opening of the mask plate adopted in the present invention enlarges markedly, thus reducing the opening blocking of mask plate, it is to avoid line defect and mixed color phenomenon occurs in AMOLED, promotes the making yield of AMOLED.Meanwhile, described white light-emitting layer is formed by stacking by red light emitting layer, green light emitting layer and blue light-emitting layer, it is not necessary to increases evaporation processing procedure, can complete the making of white light-emitting layer.
It should be noted that, red light emitting layer in described step 2, green light emitting layer, and the production order of blue light-emitting layer does not limit, such as: be successively followed successively by red light emitting layer, green light emitting layer, and blue light-emitting layer, or successively it is followed successively by red light emitting layer, blue light-emitting layer, and green light emitting layer, or successively it is followed successively by green light emitting layer, red light emitting layer, and blue light-emitting layer, or successively it is followed successively by green light emitting layer, blue light-emitting layer, and red light emitting layer, or successively it is followed successively by blue light-emitting layer, red light emitting layer, and green light emitting layer, or successively it is followed successively by blue light-emitting layer, green light emitting layer, and red light emitting layer.Red light emitting layer, green light emitting layer and blue light-emitting layer overlay order from bottom to top described in the corresponding described white light-emitting layer of sequencing when described red light emitting layer, green light emitting layer and blue light-emitting layer make.
Specifically, described red mask plate 2, green mask plate 3 and blue mask plate 4 are high-precision metal mask plate.
nullIn sum，The invention provides a kind of AMOLED dot structure，Including: multiple pixel cells of arrangement in array，Each pixel cell all includes the red sub-pixel of arrangement in Tian-shaped、Green sub-pixels、Blue subpixels、And white sub-pixels，Wherein，Red sub-pixel and green sub-pixels are positioned at same a line，Blue subpixels and white sub-pixels are positioned at same a line，Blue subpixels is positioned at the left side of described white sub-pixels，Up and down two sub-pixel colors adjacent from white sub-pixels are different，And pass through red light emitting layer、Green light emitting layer、And blue light-emitting layer superposition forms white light-emitting layer，The opening correspondence white sub-pixels of the mask plate that this dot structure adopts when making and color sub-pixels to be deposited，Mask plate compared to prior art split shed district only corresponding solid color sub-pixel，The opening of the mask plate adopted in the present invention enlarges markedly，Thus reducing the opening blocking of mask plate，Avoid AMOLED that line defect and mixed color phenomenon occur，Improve the making yield of AMOLED.The present invention also provides for a kind of AMOLED luminescent layer manufacture method, it is possible to increase the opening of mask plate, reduces the opening blocking of mask plate, it is to avoid line defect and mixed color phenomenon occurs in AMOLED, improves the making yield of AMOLED.
The above, for the person of ordinary skill of the art, it is possible to conceive according to technical scheme and technology and make other various corresponding changes and deformation, and all these change and deform the protection domain that all should belong to the claims in the present invention.
Claims (10)
1. an AMOLED dot structure, it is characterized in that, including: multiple pixel cells (10) of arrangement in array, each pixel cell (10) all includes: red sub-pixel (R), green sub-pixels (G), blue subpixels (B) and white sub-pixels (W)；
In each pixel cell (10), described red sub-pixel (R), green sub-pixels (G), blue subpixels (B) and white sub-pixels (W) arrange in Tian-shaped, described red sub-pixel (R) and green sub-pixels (G) are positioned at same a line, and described blue subpixels (B) and white sub-pixels (W) are positioned at same a line；Described red sub-pixel (R) and green sub-pixels (G) are positioned at the top of described blue subpixels (B) and white sub-pixels (W), and described blue subpixels (B) is positioned at the left side of described white sub-pixels (W)；
In the pixel cell (10) that each two is adjacent, the red sub-pixel (R) of one pixel cell (10) is positioned at the left side of green sub-pixels (G), and the red sub-pixel (R) of one other pixel unit (10) is positioned at the right side of green sub-pixels (G)；
Described red sub-pixel (R) has red light emitting layer, green sub-pixels (G) has green light emitting layer, blue subpixels (B) has blue light-emitting layer, and white sub-pixels (W) has the white light-emitting layer formed by red light emitting layer, green light emitting layer and blue light-emitting layer superposition.
2. AMOLED dot structure as claimed in claim 1, it is characterised in that described white light-emitting layer includes the red light emitting layer, green light emitting layer and the blue light-emitting layer that stack gradually from bottom to top.
3. AMOLED dot structure as claimed in claim 1, it is characterised in that the shape of described red sub-pixel (R), green sub-pixels (G), blue subpixels (B) and white sub-pixels (W) is rectangle.
4. such as AMOLED dot structure that claim 3 is stated, it is characterised in that the area equation of described red sub-pixel (R), green sub-pixels (G), blue subpixels (B) and white sub-pixels (W).
5. an AMOLED luminescent layer manufacture method, it is characterised in that comprise the steps:
Step 1, provide a substrate (1), including multiple pixel regions (10 ') of arrangement in array, each pixel region (10 ') all includes: red subpixel areas (R '), green subpixel areas (G '), blue subpixel areas (B ') and white sub-pixels region (W ')；
In each pixel region (10 '), described red subpixel areas (R '), green subpixel areas (G '), blue subpixel areas (B ') and white sub-pixels region (W ') arrange in Tian-shaped, described red subpixel areas (R ') and green subpixel areas (G ') are positioned at same a line, and described blue subpixel areas (B ') and white sub-pixels region (W ') it is positioned at same a line；Described red subpixel areas (R ') and green subpixel areas (G ') are positioned at the top in described blue subpixel areas (B ') and white sub-pixels region (W '), and described blue subpixel areas (B ') is positioned at the left side in described white sub-pixels region (W ')；
In the pixel region (10 ') that each two is adjacent, the red subpixel areas of one pixel region (10 ') (R ') is positioned at the left side of green subpixel areas (G '), and the red subpixel areas in one other pixel region (10 ') (R ') is positioned at the right side of green subpixel areas (G ')；
Step 2, provide red illuminating material, green luminescent material and blue emitting material, form red light emitting layer, green light emitting layer, blue light-emitting layer and the white light-emitting layer formed by red light emitting layer, green light emitting layer and blue light-emitting layer superposition respectively through red mask plate (2), green mask plate (3) and blue mask plate (4) at the upper evaporation of substrate (1)；
The red subpixel areas of described red mask plate (2) corresponding described substrate (1) (R ') and white sub-pixels region (W ') it is provided with opening；The green subpixel areas of the corresponding described substrate (1) of described green mask plate (3) (G ') and white sub-pixels region (W ') it is provided with opening；The blue subpixel areas of described blue mask plate (4) corresponding described substrate (1) (B ') and white sub-pixels region (W ') it is provided with opening.
6. AMOLED luminescent layer manufacture method as claimed in claim 5, it is characterized in that, the size of the described upper each opening of red mask plate (2) is equal to the area sum of two red subpixel areas (R ') and two white sub-pixels regions (W ')；The size of the described upper each opening of green mask plate (3) is equal to the area sum of two green subpixel areas (G ') and two white sub-pixels regions (W ')；The size of the described upper each opening of blue mask plate (4) is equal to the area sum of two blue subpixel areas (B ') and two white sub-pixels regions (W ').
7. AMOLED luminescent layer manufacture method as claimed in claim 5, it is characterized in that, described red subpixel areas (R '), green subpixel areas (G '), blue subpixel areas (B ') and white sub-pixels region (W ') shape be rectangle.
8. AMOLED luminescent layer manufacture method as claimed in claim 7, it is characterized in that, and the area equation of described red subpixel areas (R '), green subpixel areas (G '), blue subpixel areas (B ') and white sub-pixels region (W ').
9. AMOLED luminescent layer manufacture method as claimed in claim 5, it is characterized in that, in described step 2, the production order of red light emitting layer, green light emitting layer and blue light-emitting layer is followed successively by red light emitting layer, green light emitting layer and blue light-emitting layer, and described white light-emitting layer includes the red light emitting layer, green light emitting layer and the blue light-emitting layer that stack gradually from bottom to top.
10. AMOLED luminescent layer manufacture method as claimed in claim 5, it is characterised in that described red mask plate (2), green mask plate (3) and blue mask plate (4) are high-precision metal mask plate.
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| CN106571428A (en) * | 2016-10-14 | 2017-04-19 | 武汉华星光电技术有限公司 | Preparation method for preparing RGBW four-color OLED display elements |
| CN111969009A (en) * | 2020-07-30 | 2020-11-20 | 合肥维信诺科技有限公司 | Display panel and mask set |
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| CN106571428A (en) * | 2016-10-14 | 2017-04-19 | 武汉华星光电技术有限公司 | Preparation method for preparing RGBW four-color OLED display elements |
| CN106571428B (en) * | 2016-10-14 | 2019-02-01 | 武汉华星光电技术有限公司 | The preparation method of tetra- color OLED display element of RGBW |
| CN111969009A (en) * | 2020-07-30 | 2020-11-20 | 合肥维信诺科技有限公司 | Display panel and mask set |
| CN111969009B (en) * | 2020-07-30 | 2024-03-15 | 合肥维信诺科技有限公司 | Display panel and mask plate set |
Also Published As
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| CN105789254B (en) | 2018-04-27 |
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