CN105788789A - Preparation method of resistor - Google Patents
Preparation method of resistor Download PDFInfo
- Publication number
- CN105788789A CN105788789A CN201610287400.4A CN201610287400A CN105788789A CN 105788789 A CN105788789 A CN 105788789A CN 201610287400 A CN201610287400 A CN 201610287400A CN 105788789 A CN105788789 A CN 105788789A
- Authority
- CN
- China
- Prior art keywords
- parts
- heat treatment
- preparation
- resistor disc
- biscuit
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/30—Apparatus or processes specially adapted for manufacturing resistors adapted for baking
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
- H01C7/105—Varistor cores
- H01C7/108—Metal oxide
- H01C7/112—ZnO type
Abstract
The invention relates to a preparation method of a resistor. The resistor comprises, by weight, 95-100 parts of ZnO, 1-3 parts of Sb2O5, 5-7 parts of Sb2O3, 1-2 parts of NiO, 0.5-2.2 parts of Ni2O3, 3-4 parts of SiO2, 1-2 parts of Bi2O3, 3-4 parts of B2O3, 1-2 parts of AgNO3, 3-4 parts of Al(NO3)3, 2-3 parts of mullite and 6-7 parts of glass powder. The preparation method is simple in process and suitable for industrial production, and the complex zinc oxide resistor is uniform in prepared components and structure and has high through flow characteristics.
Description
Technical field
The present invention relates to the preparation method of a kind of resistor disc, belong to resistor disc field of material technology.
Background technology
Zinc oxide varistor directly affects the level of Zinc-Oxide Arrester as the core component of Zinc-Oxide Arrester, its performance.
Extra-high voltage grade Zinc-Oxide Arrester valve block is higher due to technical sophistication, cost, is the most only had by minority developed country, energy
Enough develop manufacturer's phoenix feathers and unicorn horns especially of the metal oxide arrester being suitable for extra-high voltage grid.In order to accelerate China's electric power
The development of industry, breaks away from the dependence to external product and technology, and exploitation has the zinc oxide valve plate of high throughflow capacity and has the heaviest
The realistic meaning wanted.
Research finds, the main cause affecting resistor disc through-current capability is that valve block interior microscopic inequality structure causes CURRENT DISTRIBUTION
Inequality, consequent heat causes built-in thermal stress to be formed, so that valve block punctures or bursts.Therefore varistor is improved
The structural homogeneity of sheet and homogeneity of ingredients are the key factors improving through-current capability.It addition, the granularity of material powder and pattern
Performance impact after burning till resistor disc is the biggest.Powder body is the thinnest, the easiest mix homogeneously, burns till rear resistor disc microstructure and crystal boundary
Layer electrical property consistency is more preferable, and through-current capability is the biggest.
Summary of the invention
It is an object of the invention to provide a kind of resistor disc, composition, even structure, there is the composite zinc oxide resistance of high throughflow characteristic
Sheet, its technique is simple, is suitable for industrialized production.
It is an object of the invention to be achieved through the following technical solutions, the preparation method of a kind of resistor disc, comprise the following steps:
(1) described resistor disc is made up of each component of following weight portion: ZnO 95-100 part, Sb2O51-3 part, Sb2O3 5-7
Part, NiO 1-2 part, Ni2O30.5-2.2 part, SiO23-4 part, Bi2O31-2 part, B2O33-4 part, AgNO31-2 part,
Al(NO3)33-4 part, mullite 2-3 part, glass dust 6-7 part；
(2) pulverize after first the most weighted all components in addition to ZnO being mixed and calcines；Its granularity it is milled to after pulverizing
Less than 0.6-1.2 μm, then add water with major ingredient ZnO and be mixed into uniform slip, the aqueous mass percent of slip is controlled
50-55%；Then carry out being spray dried to pellet by slip；
(3) the adjustment pellet aqueous time is 36-40 minute, by pellet moisture control at 4-4.5%, and re-compacted one-tenth disc
Biscuit；Biscuit is loaded in kiln with 510-550 DEG C of binder removal；
(4) biscuit after binder removal is sintered in 1300-1400 DEG C, is incubated 6-8 hour, obtains potsherd；Grinding is burnt till
After potsherd both ends of the surface, it is ensured that the depth of parallelism of potsherd both ends of the surface and the flatness of each end face；Heat treatment is carried out after grinding,
Heat treatment temperature is 600-630 DEG C, and heat treatment time is 5-10h；
(5) electrode spraying and painting glaze.
Preferably, described sintering temperature is 1350-1380 DEG C and is sintered, and is incubated 7 hours.
Preferably, described heat treatment temperature is 620 DEG C, and heat treatment time is 7h.
Compared with prior art, the method have the advantages that raw material zinc oxide and additive Sb that the present invention uses2O5、
Sb2O3And other complex function additives, prepared by the method for chemical coprecipitation, more each raw material ball milling mixed,
Substantially increasing the uniformity of each composition and structure, the zinc oxide varistor that the method is prepared has high throughflow, comprehensive
Can stably wait particular advantages.
Detailed description of the invention
By particular specific embodiment, embodiments of the present invention being described below, those skilled in the art can be taken off by this specification
The content of dew understands other advantages and effect of the present invention easily.
Embodiment 1
The preparation method of a kind of resistor disc, comprises the following steps:
(1) described resistor disc is made up of each component of following weight portion: ZnO 95 parts, Sb2O51 part, Sb2O35 parts, NiO 1
Part, Ni2O30.5 part, SiO23 parts, Bi2O31 part, B2O33 parts, AgNO31 part, Al (NO3)33 parts, mullite 2 parts,
6 parts of glass dust；
(2) pulverize after first the most weighted all components in addition to ZnO being mixed and calcines；Its granularity it is milled to after pulverizing
Less than 0.6 μm, then add water with major ingredient ZnO and be mixed into uniform slip, the aqueous mass percent of slip is controlled 50%；
Then carry out being spray dried to pellet by slip；
(3) the adjustment pellet aqueous time is 36 minutes, by pellet moisture control 4%, and re-compacted one-tenth disc biscuit；Will
Biscuit loads in kiln with 510 DEG C of binder removals；
(4) biscuit after binder removal is sintered in 1300 DEG C, is incubated 6 hours, obtains potsherd；Grind the pottery after burning till
Sheet both ends of the surface, it is ensured that the depth of parallelism of potsherd both ends of the surface and the flatness of each end face；Heat treatment, heat treatment temperature is carried out after grinding
Degree is 600 DEG C, and heat treatment time is 5h；
(5) electrode spraying and painting glaze.
Embodiment 2
The preparation method of a kind of resistor disc, comprises the following steps:
(1) described resistor disc is made up of each component of following weight portion: ZnO100 part, Sb2O53 parts, Sb2O37 parts, NiO
2 parts, Ni2O32.2 parts, SiO24 parts, Bi2O32 parts, B2O34 parts, AgNO32 parts, Al (NO3)34 parts, mullite 3
Part, 7 parts of glass dust；
(2) pulverize after first the most weighted all components in addition to ZnO being mixed and calcines；Its granularity it is milled to after pulverizing
Less than 1.2 μm, then add water with major ingredient ZnO and be mixed into uniform slip, the aqueous mass percent of slip is controlled 55%；
Then carry out being spray dried to pellet by slip；
(3) the adjustment pellet aqueous time is 40 minutes, by pellet moisture control 4.5%, and re-compacted one-tenth disc biscuit；
Biscuit is loaded in kiln with 550 DEG C of binder removals；
(4) biscuit after binder removal is sintered in 1400 DEG C, is incubated 8 hours, obtains potsherd；Grind the pottery after burning till
Ceramics both ends of the surface, it is ensured that the depth of parallelism of potsherd both ends of the surface and the flatness of each end face；Heat treatment, heat treatment is carried out after grinding
Temperature is 630 DEG C, and heat treatment time is 10h；
(5) electrode spraying and painting glaze.
Embodiment 3
The preparation method of a kind of resistor disc, comprises the following steps:
(1) described resistor disc is made up of each component of following weight portion: ZnO 98 parts, Sb2O52 parts, Sb2O36 parts, NiO 1.5
Part, Ni2O32 parts, SiO23.5 parts, Bi2O31.5 parts, B2O33.5 parts, AgNO31.5 parts, Al (NO3)33.5 parts, mullite
2.5 parts, 6.5 parts of glass dust；
(2) pulverize after first the most weighted all components in addition to ZnO being mixed and calcines；Its granularity it is milled to after pulverizing
Less than 1 μm, then add water with major ingredient ZnO and be mixed into uniform slip, the aqueous mass percent of slip is controlled 52%；
Then carry out being spray dried to pellet by slip；
(3) the adjustment pellet aqueous time is 38 minutes, by pellet moisture control 4.2%, and re-compacted one-tenth disc biscuit；
Biscuit is loaded in kiln with 530 DEG C of binder removals；
(4) biscuit after binder removal is sintered in 1350 DEG C, is incubated 7 hours, obtains potsherd；Grind the pottery after burning till
Sheet both ends of the surface, it is ensured that the depth of parallelism of potsherd both ends of the surface and the flatness of each end face；Heat treatment, heat treatment temperature is carried out after grinding
Degree is 620 DEG C, and heat treatment time is 8h；
(5) electrode spraying and painting glaze.
The principle of above-described embodiment only illustrative present invention and effect thereof, not for limiting the present invention.Any it is familiar with this skill
Above-described embodiment all can be modified under the spirit and the scope of the present invention or change by the personage of art.Therefore, such as
All that in art, tool usually intellectual is completed under without departing from disclosed spirit and technological thought etc.
Effect is modified or changes, and must be contained by the claim of the present invention.
Claims (3)
1. a preparation method for resistor disc, is characterized in that, comprises the following steps:
(1) described resistor disc is made up of each component of following weight portion: ZnO 95-100 part, Sb2O51-3 part, Sb2O3 5-7
Part, NiO 1-2 part, Ni2O30.5-2.2 part, SiO23-4 part, Bi2O31-2 part, B2O33-4 part, AgNO31-2 part,
Al(NO3)33-4 part, mullite 2-3 part, glass dust 6-7 part；
(2) pulverize after first the most weighted all components in addition to ZnO being mixed and calcines；Its granularity it is milled to after pulverizing
Less than 0.6-1.2 μm, then add water with major ingredient ZnO and be mixed into uniform slip, the aqueous mass percent of slip is controlled
50-55%；Then carry out being spray dried to pellet by slip；
(3) the adjustment pellet aqueous time is 36-40 minute, by pellet moisture control at 4-4.5%, and re-compacted one-tenth disc
Biscuit；Biscuit is loaded in kiln with 510-550 DEG C of binder removal；
(4) biscuit after binder removal is sintered in 1300-1400 DEG C, is incubated 6-8 hour, obtains potsherd；Grinding is burnt till
After potsherd both ends of the surface, it is ensured that the depth of parallelism of potsherd both ends of the surface and the flatness of each end face；Heat treatment is carried out after grinding,
Heat treatment temperature is 600-630 DEG C, and heat treatment time is 5-10h；
(5) electrode spraying and painting glaze.
The preparation method of resistor disc the most according to claim 1, is characterized in that, described sintering temperature is 1350 DEG C and carries out
Sintering, is incubated 7 hours.
The preparation method of resistor disc the most according to claim 1, is characterized in that, described heat treatment temperature is 620 DEG C, heat treatment
Time is 8h.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610287400.4A CN105788789A (en) | 2016-05-04 | 2016-05-04 | Preparation method of resistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610287400.4A CN105788789A (en) | 2016-05-04 | 2016-05-04 | Preparation method of resistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105788789A true CN105788789A (en) | 2016-07-20 |
Family
ID=56400415
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610287400.4A Pending CN105788789A (en) | 2016-05-04 | 2016-05-04 | Preparation method of resistor |
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| CN (1) | CN105788789A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106653256A (en) * | 2017-01-13 | 2017-05-10 | 昆山福烨电子有限公司 | Carbon film resistor with low dielectric constant |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5256395A (en) * | 1975-11-05 | 1977-05-09 | Nec Corp | Voltage non-linear resistor |
| GB1554356A (en) * | 1978-04-19 | 1979-10-17 | Power Dev Ltd | Resistance materials |
| JPH0967161A (en) * | 1995-08-31 | 1997-03-11 | Matsushita Electric Ind Co Ltd | Zinc oxide ceramic composition and its production |
| CN101354936A (en) * | 2008-09-12 | 2009-01-28 | 中国西电电气股份有限公司 | Method for preparing additive for zinc oxide resistance slice |
| CN101436456A (en) * | 2008-12-11 | 2009-05-20 | 中国西电电气股份有限公司 | Method for preparing zinc oxide resistance card |
| CN101698597A (en) * | 2009-10-30 | 2010-04-28 | 中国西电电气股份有限公司 | Raw material formulation of high-gradient non-linear resistance card and manufacturing method thereof |
| CN105427977A (en) * | 2016-01-16 | 2016-03-23 | 国网电力科学研究院武汉南瑞有限责任公司 | High-performance direct-current zinc oxide varistor and preparation process thereof |
-
2016
- 2016-05-04 CN CN201610287400.4A patent/CN105788789A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5256395A (en) * | 1975-11-05 | 1977-05-09 | Nec Corp | Voltage non-linear resistor |
| GB1554356A (en) * | 1978-04-19 | 1979-10-17 | Power Dev Ltd | Resistance materials |
| JPH0967161A (en) * | 1995-08-31 | 1997-03-11 | Matsushita Electric Ind Co Ltd | Zinc oxide ceramic composition and its production |
| CN101354936A (en) * | 2008-09-12 | 2009-01-28 | 中国西电电气股份有限公司 | Method for preparing additive for zinc oxide resistance slice |
| CN101436456A (en) * | 2008-12-11 | 2009-05-20 | 中国西电电气股份有限公司 | Method for preparing zinc oxide resistance card |
| CN101698597A (en) * | 2009-10-30 | 2010-04-28 | 中国西电电气股份有限公司 | Raw material formulation of high-gradient non-linear resistance card and manufacturing method thereof |
| CN105427977A (en) * | 2016-01-16 | 2016-03-23 | 国网电力科学研究院武汉南瑞有限责任公司 | High-performance direct-current zinc oxide varistor and preparation process thereof |
Non-Patent Citations (1)
| Title |
|---|
| 何金良: "《配电线路雷电防护》", 30 September 2013 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106653256A (en) * | 2017-01-13 | 2017-05-10 | 昆山福烨电子有限公司 | Carbon film resistor with low dielectric constant |
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Application publication date: 20160720 |
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