CN105777100A - Intermediate-temperature sintering high-frequency dielectric ceramic capacitor material - Google Patents
Intermediate-temperature sintering high-frequency dielectric ceramic capacitor material Download PDFInfo
- Publication number
- CN105777100A CN105777100A CN201610098246.6A CN201610098246A CN105777100A CN 105777100 A CN105777100 A CN 105777100A CN 201610098246 A CN201610098246 A CN 201610098246A CN 105777100 A CN105777100 A CN 105777100A
- Authority
- CN
- China
- Prior art keywords
- ceramic capacitor
- dielectric ceramic
- sintering temperature
- frequency dielectric
- powder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005245 sintering Methods 0.000 title claims abstract description 26
- 239000000463 material Substances 0.000 title claims abstract description 19
- 239000003985 ceramic capacitor Substances 0.000 title claims abstract description 15
- 238000000498 ball milling Methods 0.000 claims abstract description 11
- 238000001035 drying Methods 0.000 claims abstract description 9
- 239000002994 raw material Substances 0.000 claims abstract description 9
- 239000000126 substance Substances 0.000 claims abstract description 7
- 229910019670 (NH4)H2PO4 Inorganic materials 0.000 claims abstract description 4
- 239000004372 Polyvinyl alcohol Substances 0.000 claims abstract description 4
- 229920002451 polyvinyl alcohol Polymers 0.000 claims abstract description 4
- 239000000843 powder Substances 0.000 claims description 21
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 20
- 239000008367 deionised water Substances 0.000 claims description 10
- 229910021641 deionized water Inorganic materials 0.000 claims description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 8
- 238000002360 preparation method Methods 0.000 claims description 7
- 239000000919 ceramic Substances 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 238000007603 infrared drying Methods 0.000 claims description 3
- 238000000465 moulding Methods 0.000 claims description 3
- 238000003786 synthesis reaction Methods 0.000 claims description 3
- 230000014759 maintenance of location Effects 0.000 claims description 2
- 238000000643 oven drying Methods 0.000 claims description 2
- 239000003990 capacitor Substances 0.000 abstract description 2
- 238000012216 screening Methods 0.000 abstract 2
- 239000000203 mixture Substances 0.000 description 3
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 239000011805 ball Substances 0.000 description 1
- -1 ball milling 4 hours Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910002056 binary alloy Inorganic materials 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/447—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on phosphates, e.g. hydroxyapatite
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/64—Burning or sintering processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
- H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3205—Alkaline earth oxides or oxide forming salts thereof, e.g. beryllium oxide
- C04B2235/3206—Magnesium oxides or oxide-forming salts thereof
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
- C04B2235/656—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes characterised by specific heating conditions during heat treatment
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Ceramic Capacitors (AREA)
Abstract
The invention discloses an intermediate-temperature sintering high-frequency dielectric ceramic capacitor material.The chemical formula of the material is Mg3P2O8.Firstly, raw materials MgO and (NH4)H2PO4 are weighed and mixed according to the chemical formula, the raw materials are calcined at the temperature of 850 DEG C after ball-milling, drying and screening, polyvinyl alcohol with the mass percentage of 5% is added, and after ball-milling, drying and screening, a green body is formed; the green body is sintered at the temperature of 1,000-1,075 DEG C, and the intermediate-temperature sintering high-frequency dielectric ceramic capacitor material is prepared.The material has the low sintering temperature (1.000-1,075 DEG C), low dielectric constant (5.4-6.2), small loss value (15*10-4 to 20*10-4) and small capacitance temperature coefficient (40*10-6/DEG C to 170*10-6/DEG C, and the vacancy of low-dielectric-constant capacitors on the market is further filled up.
Description
Technical field
The invention belongs to a kind of ceramic composition being characterized with composition, particularly to a kind of Novel medium temperature sintered high-frequency dielectric pottery
Ceramic material and preparation method.
Background technology
Along with advancing by leaps and bounds of electronic information technology, electronic product is just towards the side of light weight slimming, high-performance and multifunction
To development.Since entering 21 century, the most in recent years, the integrated level of super large-scale integration device is more and more higher.When
When i.e. integrated level improves constantly when the characteristic size of device is gradually reduced, resistance-capacitance (RC) can be caused to postpone to rise, thus
The series of problems such as the enhancing of signal transmission delay, noise jamming and power attenuation increase occur, this will greatly limit the height of device
Speed performance.Reducing RC and postpone there are two approach with power attenuation, one is to reduce conductor resistance R, and another one is also more simultaneously
It is important that reduce parasitic capacitance C that dielectric layer brings.Owing to electric capacity C is proportional to DIELECTRIC CONSTANT εr, so being accomplished by exploitation
Novel, low cost and there is the advanced low-k materials of superperformance.
Mg3P2O8Launch research as a kind of photoelectric material before binary system always, then thus do not have people reported its
Dielectric properties under high frequency or even microwave frequency band.Through experimental studies have found that this system have sintering temperature low (～1050 DEG C),
Low-k (～6), low (≤2x10 is lost-3), and its free dielectric constant temperature coefficient is relatively low.But, this system
Sintering temperature can not be applied to the preparation of LTCC (LTCC), for satisfied actual application, reduce system further
Sintering temperature, be substantially reduced the cost of multilayer device, become researcher make great efforts direction.
Summary of the invention
The purpose of the present invention, is to prepare a kind of high frequency low-k ceramic condenser, meets the market demand, it is provided that Yi Zhongxin
Type intermediate sintering temperature high-frequency dielectric ceramic capacitor and preparation method thereof.
The present invention is achieved by following technical solution.
. a kind of intermediate sintering temperature high-frequency dielectric ceramic capacitor material, its chemical formula is Mg3P2O8。
The preparation method of above-mentioned intermediate sintering temperature high-frequency dielectric ceramic capacitor material, has following steps:
(1) by raw material MgO, (NH4)H2PO4By Mg3P2O8Chemical formula weighs dispensing；
(2) powder that step (1) is prepared is put in ball grinder, add zirconia ball and deionized water, ball milling 4 hours；Will
Raw material after ball milling is placed in infrared drying oven drying, crosses 40 mesh sieves, it is thus achieved that evengranular powder after drying；
(3) powder after step (2) being processed is calcined 4 hours at 850 DEG C, synthesizes principal crystalline phase；
(4) in the powder after step (3) synthesis principal crystalline phase, additional mass percent is the polyvinyl alcohol of 5%, puts into ball grinder
In, add zirconia ball and deionized water, ball milling 12 hours, after drying, cross 80 mesh sieves, then with powder compressing machine with 4MPa
Pressure forming be base substrate；
(5) by the base substrate after step (4) molding in 1000～1075 DEG C of sintering, it is incubated 4 hours, makes intermediate sintering temperature high frequency and be situated between
Ceramics.
The drying temperature of described step (2) and step (4) is 100 DEG C.
The ceramic powder of described step (2) and step (4) is 1: 1: 2 with zirconia ball, the mass ratio of deionized water.
The base substrate of described step (4) is the disk of Φ 10mm × 1mm.
Briquetting pressure 4Mpa of the powder compressing machine of described step (4).
The sintering temperature of described step (5) is 1050 DEG C, and temperature retention time is 4h.
Beneficial effects of the present invention is as follows:
Provide a kind of Novel medium temperature sintered high-frequency dielectric ceramic material, prepared Mg3P2O8Material, has relatively low sintering
Temperature (1000～1075 DEG C), relatively low-k (5.4～6.2), relatively low loss-value (15～20 × 10-4), less electric capacity
Amount temperature coefficient (40 × 10-6/ DEG C～170 × 10-6/ DEG C), further compensate for the vacancy of low-k capacitor on market.
Detailed description of the invention
Below by specific embodiment, the invention will be further described, raw materials used in example is commercially available analytical reagent,
Specific embodiment is as follows.
Embodiment 1
(1) by raw material MgO, (NH4)H2PO4By Mg3P2O8Chemical formula weighs dispensing；
(2) powder of above-mentioned preparation is put in ball grinder, adds zirconia ball and deionized water, ball milling 4 hours, powder body with
Zirconia ball, the mass ratio of deionized water are 1: 1: 2；Raw material after ball milling is placed in infrared drying oven at 100 DEG C baking
Dry, cross 40 mesh sieves after drying, it is thus achieved that evengranular powder；
(3) powder of above-mentioned mix homogeneously is calcined 4 hours at 850 DEG C, synthesize principal crystalline phase；
(4) in the powder after synthesis principal crystalline phase, additional mass percent is the polyvinyl alcohol of 5%, puts in ball grinder, adds
Zirconia ball and deionized water, powder body is 1: 1: 2 with zirconia ball, the mass ratio of deionized water, and ball milling 12 hours dries
Cross 80 mesh sieves after Gan, then be pressed into the base substrate of Φ 10mm × 1mm with powder compressing machine with the pressure of 4MPa；
(5) by the base substrate after above-mentioned molding in 1050 DEG C of sintering, it is incubated 4 hours, makes high-frequency dielectric ceramic capacitor material；
(6) Agilent 4278A electric impedance analyzer is used to test its dielectric properties, under 1MHz, εr=5.83, tan δ=16.3
TCC=78 × 10-6/℃。
Embodiment 2-4
The related process parameters of embodiment 2-4 and dielectric properties refer to table 1, and remaining preparation process is identical with embodiment 1.
Table 1
The present invention is not limited to above-described embodiment, and the change of some details is possible, but the most therefore this run counter to the present invention's
Scope and spirit.
Claims (6)
1. an intermediate sintering temperature high-frequency dielectric ceramic capacitor material, its chemical formula is Mg3P2O8。
The preparation method of above-mentioned intermediate sintering temperature high-frequency dielectric ceramic capacitor material, has following steps:
(1) by raw material MgO, (NH4)H2PO4By Mg3P2O8Chemical formula weighs dispensing；
(2) powder that step (1) is prepared is put in ball grinder, add zirconia ball and deionized water, ball milling 4 hours；Will
Raw material after ball milling is placed in infrared drying oven drying, crosses 40 mesh sieves, it is thus achieved that evengranular powder after drying；
(3) powder after step (2) being processed is calcined 4 hours at 850 DEG C, synthesizes principal crystalline phase；
(4) in the powder after step (3) synthesis principal crystalline phase, additional mass percent is the polyvinyl alcohol of 5%, puts into ball grinder
In, add zirconia ball and deionized water, ball milling 12 hours, after drying, cross 80 mesh sieves, then with powder compressing machine with 4MPa
Pressure forming be base substrate；
(5) by the base substrate after step (4) molding in 1000～1075 DEG C of sintering, it is incubated 4 hours, makes intermediate sintering temperature high frequency and be situated between
Ceramics.
A kind of intermediate sintering temperature high-frequency dielectric ceramic capacitor material the most according to claim 1, it is characterised in that described step
Suddenly the drying temperature of (2) and step (4) is 100 DEG C.
A kind of intermediate sintering temperature high-frequency dielectric ceramic capacitor material the most according to claim 1, it is characterised in that described step
Suddenly the ceramic powder of (2) and step (4) is 1: 1: 2 with zirconia ball, the mass ratio of deionized water.
A kind of intermediate sintering temperature high-frequency dielectric ceramic capacitor material the most according to claim 1, it is characterised in that described step
Suddenly the base substrate of (4) is the disk of Φ 10mm × 1mm.
A kind of intermediate sintering temperature high-frequency dielectric ceramic capacitor material the most according to claim 1, it is characterised in that described step
Suddenly briquetting pressure 4Mpa of the powder compressing machine of (4).
A kind of intermediate sintering temperature high-frequency dielectric ceramic capacitor material the most according to claim 1, it is characterised in that described step
Suddenly the sintering temperature of (5) is 1050 DEG C, and temperature retention time is 4h.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610098246.6A CN105777100A (en) | 2016-02-23 | 2016-02-23 | Intermediate-temperature sintering high-frequency dielectric ceramic capacitor material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610098246.6A CN105777100A (en) | 2016-02-23 | 2016-02-23 | Intermediate-temperature sintering high-frequency dielectric ceramic capacitor material |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105777100A true CN105777100A (en) | 2016-07-20 |
Family
ID=56402832
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610098246.6A Pending CN105777100A (en) | 2016-02-23 | 2016-02-23 | Intermediate-temperature sintering high-frequency dielectric ceramic capacitor material |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105777100A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109851350A (en) * | 2019-01-17 | 2019-06-07 | 天津大学 | A kind of low Jie high Q lithium magnesium phosphorus system dielectric material and preparation method thereof |
| CN110937889A (en) * | 2019-12-10 | 2020-03-31 | 武汉科技大学 | Zirconium phosphate ceramic material and preparation method thereof |
| CN116924789A (en) * | 2023-07-25 | 2023-10-24 | 山东同方鲁颖电子有限公司 | Nickel ion doped low-dielectric magnesium phosphate microwave dielectric ceramic and preparation method thereof |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104973857A (en) * | 2015-07-31 | 2015-10-14 | 华南理工大学 | Low-dielectric-constant polyanion type microwave dielectric ceramic and preparation method thereof |
-
2016
- 2016-02-23 CN CN201610098246.6A patent/CN105777100A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104973857A (en) * | 2015-07-31 | 2015-10-14 | 华南理工大学 | Low-dielectric-constant polyanion type microwave dielectric ceramic and preparation method thereof |
Non-Patent Citations (2)
| Title |
|---|
| JIAN-JIANG BIAN等: "Microwave Dielectric Properties of A2P2O7 (A = Ca, Sr, Ba; Mg, Zn, Mn)", 《JAPANESE JOURNAL OF APPLIED PHYSICS》 * |
| ROBERT NEIMAN等: "Setting and thermal reactions of phosphate investments", 《JOURNAL OF DENTAL RESEARCH》 * |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109851350A (en) * | 2019-01-17 | 2019-06-07 | 天津大学 | A kind of low Jie high Q lithium magnesium phosphorus system dielectric material and preparation method thereof |
| CN110937889A (en) * | 2019-12-10 | 2020-03-31 | 武汉科技大学 | Zirconium phosphate ceramic material and preparation method thereof |
| CN110937889B (en) * | 2019-12-10 | 2022-03-04 | 武汉科技大学 | Zirconium phosphate ceramic material and preparation method thereof |
| CN116924789A (en) * | 2023-07-25 | 2023-10-24 | 山东同方鲁颖电子有限公司 | Nickel ion doped low-dielectric magnesium phosphate microwave dielectric ceramic and preparation method thereof |
| CN116924789B (en) * | 2023-07-25 | 2024-02-27 | 山东同方鲁颖电子有限公司 | Nickel ion doped low-dielectric magnesium phosphate microwave dielectric ceramic and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104310986B (en) | A kind of high-k temperature-stable ceramic capacitor dielectric material | |
| CN105777100A (en) | Intermediate-temperature sintering high-frequency dielectric ceramic capacitor material | |
| CN105565799A (en) | Low-loss temperature-stable high-frequency dielectric ceramic | |
| CN105801104B (en) | A kind of high dielectric constant temperature-stable ceramic capacitor dielectric material | |
| CN104876578A (en) | Low-dielectric constant microwave dielectric ceramic SrLi3EuV8O24 and preparation method thereof | |
| CN104671784A (en) | Temperature stabilizing type high-quality factor microwave dielectric ceramic Nd2La2W3O15 and preparation method thereof | |
| CN104478408A (en) | Ultralow-dielectric-constant microwave dielectric ceramic Li3Si2B3O10 and preparation method thereof | |
| CN106830923A (en) | High quality factor microwave dielectric ceramic Bi3Y2Ga3O12 | |
| CN106892656A (en) | A kind of low temperature sintering high-dielectric constant capacitor dielectric material | |
| CN108467267A (en) | A kind of three layers of composite dielectric materials of temperature-stable | |
| CN104817324A (en) | Temperature-stable microwave dielectric ceramics Li<2>LaVO<5> with low dielectric constants | |
| CN103992110A (en) | High dielectric constant temperature stable high frequency dielectric ceramic and preparation method thereof | |
| CN104876571A (en) | Low-loss temperature-stable low-dielectric constant microwave dielectric ceramic SrLi3Sm3W2O13 | |
| CN104876570A (en) | High-quality factor low-dielectric constant microwave dielectric ceramic BaLi3La3W2O13 | |
| CN104446376A (en) | Ultralow-dielectric-constant microwave dielectric ceramic Li2TiB4O9 and preparation method thereof | |
| CN104370528A (en) | Ultralow-dielectric-constant microwave dielectric ceramic Ba2LiB5O10 and preparation method thereof | |
| CN104311010B (en) | A kind of low-loss temperature-stabilized radio ceramics condenser dielectric and preparation method thereof | |
| CN114736012A (en) | Low dielectric microwave dielectric ceramic with ultrahigh Q value and LTCC material thereof | |
| CN104402410A (en) | Ultra low dielectric constant microwave dielectric ceramic LaAlMg8O11 and preparation method thereof | |
| CN107010924A (en) | A kind of temperature-stable gallate microwave dielectric ceramic | |
| CN101723653A (en) | Microwave-tuned composite ceramic material and preparation method thereof | |
| CN107459351A (en) | A kind of temperature-stable Dielectric Materials at Radio Frequencies | |
| CN104446448A (en) | Temperature-stable type low-dielectric-constant microwave dielectric ceramic and preparation method thereof | |
| CN104876572A (en) | High-quality factor ultralow-dielectric constant microwave dielectric ceramic CaLi3La3Mo2O13 | |
| CN103964841B (en) | A kind of microwave-tuned composite ceramic material and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20160720 |