CN105776128A - Method for controlling heat treatment forming diversity of silicon-based microstructures - Google Patents
Method for controlling heat treatment forming diversity of silicon-based microstructures Download PDFInfo
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- CN105776128A CN105776128A CN201610260358.7A CN201610260358A CN105776128A CN 105776128 A CN105776128 A CN 105776128A CN 201610260358 A CN201610260358 A CN 201610260358A CN 105776128 A CN105776128 A CN 105776128A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00642—Manufacture or treatment of devices or systems in or on a substrate for improving the physical properties of a device
- B81C1/0069—Thermal properties, e.g. improve thermal insulation
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0161—Controlling physical properties of the material
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Abstract
The invention discloses a method for controlling heat treatment forming diversity of silicon-based microstructures. The method comprises the following steps: step one, increasing alpha=Ds/D value, performing heat treatment on a sample in the same temperature environment, to obtain a first silicon-based microstructure; step two, increasing alpha=Ds/D value, performing heat treatment on the sample for the same time in step one and at the same temperature in step one, to obtain a second silicon-based microstructure; step three, increasing alpha=Ds/D value, performing heat treatment on the sample for the same time in step two and at the same temperature in step two, to obtain a third silicon-based microstructure; step four, increasing tan(theta)=(D+Ds)/H value, performing heat treatment on the sample for the same time in step one and at the same temperature in step one, to obtain a fourth silicon-based microstructure; step five, increasing tan(theta)=(D+Ds)/H value, performing heat treatment on the sample for the same time in step one and at the same temperature in step one, to obtain a fifth silicon-based microstructure; step six, increasing tan(theta)=(D+Ds)/H value, performing heat treatment on the sample for the same time in step one and at the same temperature in step one, to obtain a sixth silicon-based microstructure; step seven, increasing the alpha value and the tan(theta) value, performing heat treatment on the sample for the same time in step one and at the same temperature in step one, taking four initial state values, to respectively obtain the sixth silicon-based microstructure, seventh silicon-based microstructure, eighth silicon-based microstructure and ninth silicon-based microstructure; using tan(theta)=(D+Ds)/H as the X-coordinate and using alpha=Ds/D as the Y-coordinate, to obtain change states of the silicon-based microstructures.
Description
Technical field
The invention belongs to micro-nano manufacturing technology field, be specifically related to a kind of silica-based micro structure warm is processed and shape the method that multiformity controls.
Background technology
MEMS (MEMS) is also microelectromechanical systems, micro-system, micromechanics etc., microelectric technique (semiconductor fabrication) basis grows up, it is in electrical information field extensive uses such as Aero-Space, auto industry, consumer electronics, it is possible to be effectively improved automatization and the intellectuality of system.
Silicon materials are MEMS one of main materials manufactured, and produce size at micron-sized three dimensional structure on silicon chip, it is achieved the perception of information and control to external world, may make up a multi-functional microsystem.In recent years, every subjects field is insistent attempts various new scientific and technical method to manufacture and design silica-based micro structure Silicononnothing (SON) and to be applied in various machinery, for instance: sensor, resonator.SON structure is just applied in small semiconductor for improving the insulating properties of device a long time ago, and more application is at micro electronmechanical tool system (MEMS) such as pressure transducer, and medical Minimally Invasive Surgery clamp, up to now, how to control the preparation of SON structure so that it is the research being applied on different internal structure requirement resonator remains blank out.In the middle of the research process of other scholars, they tend to the silica-based micro structure SON utilizing the silicon materials with fixing surface texture to manufacture ad hoc structure.But, these achievements still cannot disclose the processing multifarious rule of metamorphosis, thus course of processing optimization is not had any directive significance.
Summary of the invention
Based on above-mentioned present situation, the invention provides a kind of silica-based micro structure warm and process shaping multiformity control method.
The present invention adopts the following technical scheme that: silica-based micro structure warm processes and shapes multiformity control method, it is first determined initial silica-based microstructure parameters, including the depth H of cylindrical hole, the diameter D of cylindrical hole, the distance Ds between aperture, makes tan θ=(D+Ds)/H, α=Ds/ D, then as follows:
Step one: increase α=DsThe value of/D, namely hole diameter enlargement spacing and the ratio of aperture value, to sample heat treatment in same temperature environment, obtain the first silica-based micro structure；
Step 2: then increase α=DsThe value of/D, at temperature identical with step one, carries out heat treatment and step one identical time, obtains the second silica-based micro structure sample；
Step 3: continue to increase α=DsThe value of/D, with the temperature and time of second step, obtains the 3rd silica-based micro structure；
Step 4: increase tan θ=(D+DsThe value of)/H, namely reduces cylindrical hole depth H, to sample heat treatment in the temperature and time identical with step one, obtains the 4th silica-based micro structure；
Step 5: then increase tan θ=(D+DsThe value of)/H, identical temperature and time is to sample heat treatment with step one, obtains the 5th silica-based micro structure；
Step 6: continue to increase tan θ=(D+DsThe value of)/H, identical temperature and time is to sample heat treatment with step one, obtains the 6th silica-based micro structure；
Step 7: increasing the value of α and tan θ, identical temperature and time is to sample heat treatment with step one, takes four initial state value, respectively obtains the six, the seven, the eight, the 9th silica-based micro structures simultaneously；
Finally, with tan θ=(D+DsThe value of)/H is abscissa, α=DsThe value of/D is vertical coordinate, obtains silica-based microstructure change state.
Described silica-based micro structure warm processes and shapes multiformity control method, and the material carrying out warm process silica-based micro-structure forming research is polishing 6-in (100) n-type silicon wafer.
Described silica-based micro structure warm processes and shapes multiformity control method, adopts ion etching mechanism to produce the sample of U-shaped cylindrical hole polishing 6-in (100) n-type silicon wafer.
Described silica-based micro structure warm processes and shapes multiformity control method, step one, the sample of U-shaped cylindrical hole is carried out in 500 DEG C of-1400 DEG C of environment heat treatment.
Silica-based micro structure warm is mainly processed shaping multiformity from two aspects and controls research by the present invention, respectively: the silicon materials determining initial structure parameter are carried out heat treatment and probe into silica-based micro-structure forming multiformity by control temperature and time；Change silicon materials initial structure parameter, probe into the rule of silica-based micro-structure forming change at identical temperature and time.Present invention is disclosed the processing multifarious rule of metamorphosis, thus course of processing optimization is had directive significance.
Accompanying drawing explanation
Fig. 1 is the U-shaped cylindrical hole schematic diagram utilizing ion etching mechanism to produce.
Fig. 2 is different temperatures and the time silica-based micro-structure forming change schematic diagram to obtaining after the sample heat treatment of Fig. 1.
Fig. 3 is the microstructure parameters schematic diagram of U-shaped cylindrical hole.
Fig. 4 is the metamorphosis schematic diagram after the silica-based fine structure material heat treatment to different initiating structures.
Detailed description of the invention
Below the preferred embodiment of the present invention is elaborated.
The present embodiment carries out warm and processes the material of silica-based micro-structure forming research for polishing 6-in (100) n-type silicon wafer；In uniform temperature environment, process a period of time makes its deliquescing；Ion etching mechanism is utilized to produce U-shaped cylindrical hole (sample) as shown in Figure 1.
The U-shaped cylindrical hole obtained by said process carries out heat treatment in 500 DEG C of-1400 DEG C of environment, obtains silica-based microstructure form figure as shown in Figure 2 within the different time.
The present embodiment is by changing heat treatment temperature and time, and the shaping of silica-based micro structure has multiformity, and to sample heat treatment in 500-1400 DEG C of environment, in the identical time, different temperatures obtains different silica-based micro structures；In identical temperature, different heat treatment times obtains different silica-based micro structures, draws silica-based micro-structure forming multiformity.
Changing the initial parameter of silica-based micro structure, under identical heat treatment temperature and time control, silica-based micro-structure forming has certain Changing Pattern, as it is shown on figure 3, the depth H of cylindrical hole, the diameter D of cylindrical hole, distance Ds between aperture, makes tan θ=(D+Ds)/H, α=Ds/D.Only change the value of α, namely change Ds and D, obtain different silica-based micro-structure forming change schematic diagrams in identical heat treatment temperature and time, as shown in Fig. 4 a, 4b, 4c；Only change the value of tan θ, namely change the depth H of cylindrical hole, under identical heat treatment temperature and time control, obtain different silica-based micro-structure forming change schematic diagrams, as shown in Fig. 4 d, 4e, 4f；Change the value of tan θ and α, identical heat treatment temperature and time simultaneously, obtain different silica-based microstructure change schematic diagrams, as shown in Fig. 4 g, 4h, 4i.
As shown in Figure 3, it is determined that initial silica-based microstructure parameters, including the depth H of cylindrical hole, the diameter D of cylindrical hole, the distance Ds between aperture, tan θ=(D+D is mades)/H, α=Ds/D。
Step one: increase α=DsThe value of/D, namely hole diameter enlargement spacing and the ratio of aperture value, to sample heat treatment in same temperature environment, obtain silica-based micro structure schematic diagram as shown in fig. 4 a；
Step 2: then increase α=DsThe value of/D, with in above-mentioned same temperature, sample is carried out the heat treatment phase same time, obtain silica-based micro structure schematic diagram as shown in Figure 4 b；
Step 3: continue to increase α=DsThe value of/D, same to above-mentioned steps, obtain silica-based micro structure schematic diagram as illustrated in fig. 4 c；
Step 4: increase tan θ=(D+DsThe value of)/H, namely reduces cylindrical hole depth H, to sample heat treatment in the temperature and time identical with step one, obtains the silica-based micro structure schematic diagram such as Fig. 4 d；
Step 5: then increase tan θ=(D+DsThe value of)/H, identical temperature and time is to sample heat treatment with step one, obtains silica-based micro structure schematic diagram as shown in fig 4e；
Step 6: continue to increase tan θ=(D+DsThe value of)/H, identical temperature and time is to sample heat treatment with step one, obtains silica-based micro structure schematic diagram as shown in fig. 4f；
Step 7: increasing the value of α and tan θ, identical temperature and time is to sample heat treatment with step one, takes four initial state value, respectively obtains the silica-based micro structure schematic diagram as shown in Fig. 4 f, 4g, 4h, 4i simultaneously；
With tan θ=(D+DsThe value of)/H is abscissa, α=DsThe value of/D is vertical coordinate, obtains silica-based microstructure change schematic diagram as shown in Figure 4.
Ion etching machine belongs to prior art, not describes in detail herein.
Listed above it is only the preferred embodiments of the present invention.The present invention is not limited to above example, the preparation method directly deriving from the disclosure of invention or associating deformation gained, is all considered as protection scope of the present invention.
Claims (4)
1. silica-based micro structure warm processes and shapes multiformity control method, it is characterized in that first determining initial silica-based microstructure parameters, including the depth H of cylindrical hole, the diameter D of cylindrical hole, the distance Ds between aperture, makes tan θ=(D+Ds)/H, α=Ds/ D, then as follows:
Step one: increase α=DsThe value of/D, namely hole diameter enlargement spacing and the ratio of aperture value, to sample heat treatment in same temperature environment, obtain the first silica-based micro structure；
Step 2: then increase α=DsThe value of/D, at temperature identical with step one, carries out heat treatment and step one identical time, obtains the second silica-based micro structure sample；
Step 3: continue to increase α=DsThe value of/D, with the temperature and time of second step, obtains the 3rd silica-based micro structure；
Step 4: increase tan θ=(D+DsThe value of)/H, namely reduces cylindrical hole depth H, to sample heat treatment in the temperature and time identical with step one, obtains the 4th silica-based micro structure；
Step 5: then increase tan θ=(D+DsThe value of)/H, identical temperature and time is to sample heat treatment with step one, obtains the 5th silica-based micro structure；
Step 6: continue to increase tan θ=(D+DsThe value of)/H, identical temperature and time is to sample heat treatment with step one, obtains the 6th silica-based micro structure；
Step 7: increasing the value of α and tan θ, identical temperature and time is to sample heat treatment with step one, takes four initial state value, respectively obtains the six, the seven, the eight, the 9th silica-based micro structures simultaneously；
Finally, with tan θ=(D+DsThe value of)/H is abscissa, α=DsThe value of/D is vertical coordinate, obtains silica-based microstructure change state.
2. silica-based micro structure warm as claimed in claim 1 processes and shapes multiformity control method, it is characterized in that: the material carrying out warm process silica-based micro-structure forming research is polishing 6-in (100) n-type silicon wafer.
3. silica-based micro structure warm as claimed in claim 2 processes and shapes multiformity control method, it is characterized in that: adopt ion etching mechanism to produce the sample of U-shaped cylindrical hole polishing 6-in (100) n-type silicon wafer.
4. silica-based micro structure warm as claimed in claim 3 processes and shapes multiformity control method, it is characterized in that: step one, the sample of U-shaped cylindrical hole is carried out in 500 DEG C of-1400 DEG C of environment heat treatment.
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| US20060284356A1 (en) * | 2005-06-20 | 2006-12-21 | Lim Tae H | Support platform of non-contact transfer apparatus |
| CN102583230A (en) * | 2012-03-14 | 2012-07-18 | 中国电子科技集团公司第三十八研究所 | Method for adjusting diameter of silicon nanometer hole |
| CN102931372A (en) * | 2012-11-20 | 2013-02-13 | 南京大学 | Uniform and adjustable porous membrane and preparation method thereof |
| CN103641063A (en) * | 2013-12-19 | 2014-03-19 | 中国科学院半导体研究所 | Method for preparing graphical porous silicon structure |
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Patent Citations (7)
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| US5342808A (en) * | 1992-03-12 | 1994-08-30 | Hewlett-Packard Company | Aperture size control for etched vias and metal contacts |
| JP3449604B2 (en) * | 1999-11-02 | 2003-09-22 | Ｔｄｋ株式会社 | Cooling fins |
| CN1694791A (en) * | 2002-11-12 | 2005-11-09 | 大赛璐化学工业株式会社 | Process for producing porous film and porous film |
| US20060284356A1 (en) * | 2005-06-20 | 2006-12-21 | Lim Tae H | Support platform of non-contact transfer apparatus |
| CN102583230A (en) * | 2012-03-14 | 2012-07-18 | 中国电子科技集团公司第三十八研究所 | Method for adjusting diameter of silicon nanometer hole |
| CN102931372A (en) * | 2012-11-20 | 2013-02-13 | 南京大学 | Uniform and adjustable porous membrane and preparation method thereof |
| CN103641063A (en) * | 2013-12-19 | 2014-03-19 | 中国科学院半导体研究所 | Method for preparing graphical porous silicon structure |
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