CN105761870B - A kind of room temperature ferromagnetic magnetic semiconductor material and application - Google Patents
A kind of room temperature ferromagnetic magnetic semiconductor material and application Download PDFInfo
- Publication number
- CN105761870B CN105761870B CN201610144496.9A CN201610144496A CN105761870B CN 105761870 B CN105761870 B CN 105761870B CN 201610144496 A CN201610144496 A CN 201610144496A CN 105761870 B CN105761870 B CN 105761870B
- Authority
- CN
- China
- Prior art keywords
- semiconductor material
- room temperature
- magnetic semiconductor
- ferromagnetic magnetic
- present
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 24
- 239000000463 material Substances 0.000 title claims abstract description 20
- 230000005291 magnetic effect Effects 0.000 title claims abstract description 15
- 230000005294 ferromagnetic effect Effects 0.000 title claims abstract description 13
- 239000000126 substance Substances 0.000 claims abstract description 3
- 230000003287 optical effect Effects 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 3
- 239000007787 solid Substances 0.000 abstract description 2
- 238000009987 spinning Methods 0.000 abstract 1
- 230000005307 ferromagnetism Effects 0.000 description 6
- 230000006399 behavior Effects 0.000 description 5
- 230000005611 electricity Effects 0.000 description 4
- 230000006870 function Effects 0.000 description 3
- 239000000696 magnetic material Substances 0.000 description 2
- 229910002401 SrCoO3 Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 230000005055 memory storage Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
- H01F1/01—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials
- H01F1/40—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials of magnetic semiconductor materials, e.g. CdCr2S4
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Magnetic Ceramics (AREA)
- Hard Magnetic Materials (AREA)
- Hall/Mr Elements (AREA)
Abstract
The present invention announces a kind of ferromagnetic magnetic semiconductor material of novel Room Temperature and application, and the chemical formula of the material is Sr4‑xYbxCo4O10.5(0.6≤x≤1.2), Curie temperature Tc≈320~335K.Using 1180 DEG C of conventional solid reaction method/prepare Sr for 24 hours4‑xYbxCo4O10.5(0.6≤x≤1.2)；The material can be applied to the fields such as spin fet, spinning LED, nonvolatile memory.
Description
Technical field
The present invention announces a kind of room temperature ferromagnetic magnetic semiconductor material and application, belongs to area of Spintronics.
Background technique
The present age and future are all the societies of information dominant force, the processing of information, transimission and storage will require unprecedented scale and
Speed.Played the part of emphatically in information processing and transmission with large scale integrated circuit and high-frequency device that semiconductor material is support
The role wanted.And semiconductor industry develops to today, the component number on VLSI chip presses Moore's Law not
It is disconnected to improve, close to its limit.As the size of single transistor constantly reduces, channel length is from pervious micron order
Nanoscale is developed to, the new problems such as leakage current increase, calorific value increase and parasitic capacitance effect can be not only brought, can also generate
A series of quantum Interferences for being difficult to evade, the Performance And Reliability during influencing, make to further increase integrated level and chip
Performance becomes difficult.Magnetic semiconductor material will be the active path to solve the above problems.Magnetic semiconductor not only has commonly
The function of semiconductor, and it has been also equipped with the memory storage function of magnetic material, it can be used to change us and use semiconductor now
The mode for the disc storage information that integrated circuit processing processing credit magnetic material is made into.That is magnetic semiconductor material can
This two parts function to roll into one, device volume can be not only reduced, improves storage density, shortens call duration time, is accelerated
The speed of service, and energy consumption can be greatly reduced.However only seldom magnetic semiconductor material has room-temperature ferromagnetic, this is very
Working environment is limited greatly, so the research and development of room temperature ferromagnetic magnetic semiconductor material are extremely urgent.
Summary of the invention
The purpose of the present invention is to provide a kind of room temperature ferromagnetic magnetic semiconductor material, chemical formula Sr4- xYbxCo4O10.5, 0.6≤x≤1.2.
Room temperature ferromagnetic magnetic semiconductor material of the present invention is used to prepare spin fet, spin light-emitting diodes
Pipe, nonvolatile memory.
Room temperature ferromagnetic magnetic semiconductor material of the present invention is using 1180 DEG C of conventional solid reaction method/be prepared for 24 hours.
The present invention passes through in perovskite structure SrCoO3Adulterate Yb in the position A of material3+, to reach the work for adjusting crystal structure
With, the superstructure being made of 16 perovskite structure cells (the perovskite structure cell of distortion perovskite structure cell, oxygen missing) is formed it into, and
Under this superstructure, material shows ferromagnetism.
Beneficial effects of the present invention: material preparation method of the present invention is simple, easy to accomplish, low in cost, and in room
Temperature is lower to have ferromagnetic semiconductor characteristic, Curie temperature Tc≈320~335K。
Detailed description of the invention
Fig. 1 is 1 ~ 5 different component Sr of present example4-xYbxCo4O10.5(x=0.6,0.8,0.9,1.0,1.2) is more
The brilliant intensity of magnetization-temperature curve.
Fig. 2 is Sr prepared by present example 13.4Yb0.6Co4O10.5Polycrystalline hysteresis loop.
Fig. 3 is Sr prepared by present example 23.2Yb0.8Co4O10.5Polycrystalline hysteresis loop.
Fig. 4 is Sr prepared by present example 33.1Yb0.9Co4O10.5Polycrystalline hysteresis loop.
Fig. 5 is Sr prepared by present example 43YbCo4O10.5Polycrystalline hysteresis loop.
Fig. 6 is Sr prepared by present example 52.8Yb1.2Co4O10.5Polycrystalline hysteresis loop.
Fig. 7 is Sr prepared by present example 13.4Yb0.6Co4O10.5Polycrystalline resistivity-temperature curve.
Fig. 8 is Sr prepared by present example 23.2Yb0.8Co4O10.5Polycrystalline resistivity-temperature curve.
Fig. 9 is Sr prepared by present example 33.1Yb0.9Co4O10.5Polycrystalline resistivity-temperature curve.
Figure 10 is Sr prepared by present example 43YbCo4O10.5Polycrystalline resistivity-temperature curve.
Figure 11 is Sr prepared by present example 52.8Yb1.2Co4O10.5Polycrystalline resistivity-temperature curve.
Specific embodiment
Invention is further described in detail with attached drawing combined with specific embodiments below, but protection scope of the present invention is simultaneously
It is not limited to the content.
Embodiment 1
Group is divided into Sr in the present embodiment3.4Yb0.6Co4O10.5Polycrystalline has ferromagnetism, and Curie temperature is that 328K(is shown in Fig. 1,
2), semi-conductor electricity transport behavior (see figure 7).
Embodiment 2
Group is divided into Sr in the present embodiment3.2Yb0.8Co4O10.5Polycrystalline has ferromagnetism, and Curie temperature is that 331K(is shown in Fig. 1,
3), semi-conductor electricity transport behavior (see figure 8).
Embodiment 3
Group is divided into Sr in the present embodiment3.1Yb0.9Co4O10.5Polycrystalline has ferromagnetism, and Curie temperature is that 332K(is shown in Fig. 1,
4), semi-conductor electricity transport behavior (see figure 9).
Embodiment 4
Group is divided into Sr in the present embodiment3YbCo4O10.5Polycrystalline has ferromagnetism, and Curie temperature is that 320K(is shown in Fig. 1, and 5), half
Conductor electronic transport behavior (see figure 10).
Embodiment 5
Group is divided into Sr in the present embodiment2.8Yb1.2Co4O10.5Polycrystalline has ferromagnetism, and Curie temperature is that 320K(is shown in Fig. 1,
6), semi-conductor electricity transport behavior (see Figure 11).
Claims (3)
1. a kind of room temperature ferromagnetic magnetic semiconductor material, chemical formula Sr4-xYbxCo4O10.5, 0.6≤x≤1.2.
2. room temperature ferromagnetic magnetic semiconductor material according to claim 1, it is characterised in that: TcFor 320 ~ 335K.
3. room temperature ferromagnetic magnetic semiconductor material of any of claims 1 or 2 is used to prepare spin fet, spin hair
Optical diode, nonvolatile memory.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610144496.9A CN105761870B (en) | 2016-03-15 | 2016-03-15 | A kind of room temperature ferromagnetic magnetic semiconductor material and application |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610144496.9A CN105761870B (en) | 2016-03-15 | 2016-03-15 | A kind of room temperature ferromagnetic magnetic semiconductor material and application |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105761870A CN105761870A (en) | 2016-07-13 |
| CN105761870B true CN105761870B (en) | 2018-12-14 |
Family
ID=56333248
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610144496.9A Active CN105761870B (en) | 2016-03-15 | 2016-03-15 | A kind of room temperature ferromagnetic magnetic semiconductor material and application |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105761870B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107195721B (en) * | 2017-06-07 | 2023-05-12 | 昆明理工大学 | Composite photo-thermal detector based on Nerns special effect stress and atomic layer thermopile |
| CN114656244A (en) * | 2022-03-30 | 2022-06-24 | 昆明理工大学 | Modulation SrCoO3-δMethod for ferromagnetism of system at room temperature |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101252190A (en) * | 2008-04-01 | 2008-08-27 | 南京工业大学 | Mixing electric conduction type middle-low temperature fuel cell cathode material and preparing method thereof |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6017504A (en) * | 1998-07-16 | 2000-01-25 | Universite Laval | Process for synthesizing perovskites using high energy milling |
| CN102381875A (en) * | 2010-09-02 | 2012-03-21 | 纵坚平 | Preparation method of double-perovskite ferroelectrics (FET)-antiferromagnetism (AFM) compound molecule with oxygen bridge |
-
2016
- 2016-03-15 CN CN201610144496.9A patent/CN105761870B/en active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101252190A (en) * | 2008-04-01 | 2008-08-27 | 南京工业大学 | Mixing electric conduction type middle-low temperature fuel cell cathode material and preparing method thereof |
Non-Patent Citations (3)
| Title |
|---|
| Structure-property relationship in the ordered-perovskite-related oxide Sr3.12Er0.88Co4O10.5;Shintaro Ishiwata,et al;《Physical review B》;20070122;第220406-1-4页 * |
| The phase diagram and tetragonal superstructures of the rare earth cobaltate phases Ln1-xSrxCoO3–δ (Ln=La3+, Pr3+, Nd3+, Sm3+,Gd3+, Y3+, Ho3+, Dy3+, Er3+, Tm3+ and Yb3+);M.James,et al;《Solid State Chemistry》;20041231;第1886-1895页，introduction，Table 2 * |
| W.Kobayashi,et al.Room-temperature ferromagnetism in Sr1−xYxCoO3−o(0.2≤x≤0.25）.《Physical review B》.2005,第104408-1-5页. * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105761870A (en) | 2016-07-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Godlewski et al. | Zinc oxide for electronic, photovoltaic and optoelectronic applications | |
| Garcia et al. | Ferroelectric control of spin polarization | |
| JP2024028326A (en) | Semiconductor device | |
| Katsu et al. | Photocarrier injection effect on double exchange ferromagnetism in (La, Sr) MnO3/SrTiO3 heterostructure | |
| US9378777B2 (en) | Back gate bias voltage control of oxide semiconductor transistor | |
| US9922692B2 (en) | Semiconductor device including refresh circuit for memory cell | |
| US20170178699A1 (en) | Memory device, semiconductor device, and electronic device | |
| US9935143B2 (en) | Semiconductor device and electronic device | |
| CN105761870B (en) | A kind of room temperature ferromagnetic magnetic semiconductor material and application | |
| CN105932153B (en) | A kind of magnetism unusual hall transistors of room temperature lower piezoelectric regulation and control | |
| CN111009582B (en) | Photoelectric programming multi-state memory based on thin film transistor structure and preparation method thereof | |
| WO2003107424A1 (en) | Magnetoresistive random-access memory device | |
| Sun et al. | One-Volt Oxide Thin-Film Transistors on Paper Substrates Gated by $\hbox {SiO} _ {2} $-Based Solid Electrolyte With Controllable Operation Modes | |
| CN103928350A (en) | Method for preparing double-channel-layer thin film transistor | |
| WO2009073598A1 (en) | Spin filter spintronic devices | |
| Zhou et al. | Crossover of magnetoresistance from negative to positive in the heterojunction composed of La0. 82Ca0. 18MnO3 and 0.5 wt% Nb-doped SrTiO3 | |
| Umeda et al. | Single silicon vacancy-oxygen complex defect and variable retention time phenomenon in dynamic random access memories | |
| Ghenzi et al. | One-transistor one-resistor (1T1R) cell for large-area electronics | |
| CN103341624A (en) | Method for preparing Cu-Cu2O core-shell ferromagnetic nano-particles | |
| CN112054116A (en) | Magnetic random access memory based on III-V group narrow bandgap semiconductor | |
| CN105470116B (en) | A method of regulation dilute magnetic semiconductor material room temperature magnetism | |
| Gherendi et al. | ${{In}} _ {2}{{O}} _ {3} $ Thin Film Paper Transistors | |
| CN104269493A (en) | Organic single-crystal spinning diode and manufacturing method thereof | |
| CN206401364U (en) | A kind of room temperature p-type magnetic semiconductor p n p junction devices and automatically controlled magnetic device | |
| CN104064314B (en) | A kind of preparation method of dilute magnetic semiconductor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |