CN105742959A - Phase shifting fiber bragg grating based external cavity feedback semiconductor laser - Google Patents
Phase shifting fiber bragg grating based external cavity feedback semiconductor laser Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/125—Distributed Bragg reflector [DBR] lasers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/14—External cavity lasers
- H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
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Abstract
Disclosed is a phase shifting fiber bragg grating based external cavity feedback semiconductor laser. The laser comprises a semiconductor laser, a fiber polarizer, a first <lambda>/4 wave plate, a phase shifting fiber bragg grating, a second <lambda>/4 wave plate, a polarization-maintaining bragg fiber bragg grating, an output polarization-maintaining fiber and a packaging part which are arranged on an optical path in sequence, wherein the fiber polarizer, the first <lambda>/4 wave plate, the phase shifting fiber bragg grating, the second <lambda>/4 wave plate and the polarization-maintaining bragg fiber bragg grating are arranged on a temperature controller. According to the semiconductor laser, the polarization characteristics of the <lambda>/4 wave plates and the fiber polarizer are utilized, so that the laser reflected by the phase shifting fiber bragg grating is filtered, so that the purpose of optical feedback within a short linear cavity by the narrow linewidth of the phase shifting fiber bragg grating is realized; and the linewidth compression ratio of the external cavity feedback semiconductor laser can be further increased. The external cavity feedback semiconductor laser has the advantages of simple process, compact structure, easy packaging and high robustness.
Description
Technical field
The present invention relates to semiconductor laser, particularly a kind of external cavity feedback semiconductor laser based on phase-shifted fiber grating.
Background technology
Due to reasons such as volume are little, good stability, cost are low, the life-span is high, semiconductor laser has important at the foreword basic science such as Microwave photonics, high-resolution laser spectroscopy, cold atomic clock, Fibre Optical Sensor, fiber optic communication and high-tech sector and is widely applied and demand.But most fields is desirable that semiconductor laser to have narrow linewidth to export.Such as, in fiber optic communication, the capacity (transmission range is with transfer rate long-pending) of communication system is inversely proportional to the spectral line width of light source；In coherent communication, for obtaining the low bit error rate, it is desirable to laser linewidth is less than the 1% of transfer rate；The coherent reception currently implemented requires that the live width of local oscillations lasing light emitter is in kHz magnitude especially；Detection lasing light emitter used by earthwave, not only to have very narrow live width, and require the live width stability having sub-hertz magnitude.Obtain the method that the method for narrow linewidth semiconductor laser is mainly introduced from outside into light feedback from high-fineness resonator cavity, grating etc. at present.
The main implementation of current narrow linewidth semicondcutor laser unit has:
In first technology one, utilize the outside cavity gas laser that F-P etalon and distributed feedback semiconductor laser are built.F-P etalon is used to realize the frequency self-locking of outside cavity gas laser, when the excitation wavelength of distributed feedback semiconductor laser overlaps with the peak gain spectrum of F-P etalon, single longitudinal mode lasing raising side mode suppression ratio can be realized and realize frequency self-locking, also feedback light gain can be made to be greatly enhanced, improve and inject light intensity, make output linewidth substantially compress.But element is more needed for this laser instrument, for avoiding etalon effect, the surface of each element is both needed to plating anti-reflection film, and need to build space optical path, collimation it is required between each element, operation easier high [referring to a kind of distributed feed-back exocoel narrow linewidth semiconductor laser realizing frequency self-locking, CN102709811B].
In first technology two, utilizing grating and semiconductor gain chip to constitute ECLD, wherein grating is as external reflective element.The semiconductor laser adopting this fabrication techniques is a lot, and grating therein adopts the grating inscribed in fiber grating or silicon-base plane waveguide.PLANEX series [the ACHIEVINGLOWPHASENOISEINEXTERNALCAVITYLASERIMPLEMENTEDUS INGPLANARLIGHTWAVECIRCUITTECHNOLOGY of such as U.S. RIO company, US20100303121A1] [DEVICEFABRICATIONWITHPLANARBRAGGGRATINGSSUPPRESSINGPARAS TITICEFFECT, US8358889].They adopt the mode that silica planar waveguide optical grating and semiconductor gain chip are directly docked, and utilize short exocoel and grating " hypotenuse negative feedback " principle, achieve the narrow linewidth output of 2-10kHz in 14pin butterfly encapsulates.This is the mainstream technology of current external cavity feedback semiconductor laser, but is limited to the reflection bandwidth of grating, and the live width of this laser instrument is difficult to compression further.
Summary of the invention
The purpose of the present invention is to propose to a kind of external cavity feedback semiconductor laser apparatus based on phase-shifted fiber grating.This device utilizes λ/4 wave plate and the polarization characteristic of the optical fiber polarizer, has filtered the laser of phase-shifted fiber grating reflection, thus achieving the purpose of the narrow linewidth transmission peaks compression line width of semiconductor laser utilizing phase-shifted fiber grating in short-term die cavity.
The technical problem to be solved in the present invention:
Conventional grating feedback formula semiconductor laser is all the reflection peak adopting grating, but the reflection bandwidth being limited to grating is relatively wide, is difficult to further Linewidth.Such as conventional at present antiradar reflectivity bragg grating reflection bandwidth is about 0.15nm, and it is reported that the bandwidth of phase-shifted fiber grating transmission peaks can accomplish 15MHz[ClicheJF, PainchaudY, LatrasseC, etal.Ultra-narrowBragggratingforactivesemiconductorlaser linewidthreductionthroughelectricalfeedback [C] //BraggGratingPhotosensitivityandPolingConference, paperBTuE2.2007.].If directly utilizing phase-shifted fiber grating as reflecting element, in Fig. 2 shown in 401, the reflection kernel both sides reflectance of phase-shifted fiber grating is significantly high, can introduce high light feedback and wild effect occurs.But the transmission peaks of phase-shifted fiber grating but has significantly high extinction ratio, in Fig. 2 shown in 402, light wave transmitance outside transmission peaks is almost nil.Therefore, utilize the transmission peaks of phase-shifted fiber grating to realize the purpose of semiconductor laser bulk of optical feedback, the ratio of ECLD linewidth compression can be improved further.
The technical solution of the present invention is as follows:
A kind of external cavity feedback semiconductor laser based on phase-shifted fiber grating, including semiconductor laser, temperature controller and packaging part, it is characterized in that, described temperature controller is set in described packaging part, this temperature controller sets gradually semiconductor laser, the optical fiber polarizer, oneth λ/4 wave plate, phase-shifted fiber grating, 2nd λ/4 wave plate and the inclined bragg grating of guarantor and output polarization maintaining optical fibre, described phase-shifted fiber grating is engraved on a section single-mould fiber, described inclined bragg grating of protecting is engraved on one end of another section of polarization maintaining optical fibre.
Described semiconductor laser is DFB semiconductor laser or dbr semiconductor laser instrument, the left side plating high-reflecting film of described semiconductor laser.
Described λ/4 wave plate and the 2nd λ/4 wave plate are made up of polarization maintaining optical fibre.
The angle of the slow-axis direction of the printing opacity direction of the described optical fiber polarizer and described λ/4 wave plate is 45 ° or 135 °.
The described slow-axis direction protecting inclined bragg grating and the angle of the slow-axis direction of the 2nd described λ/4 wave plate are 45 ° or 135 °.
Described phase-shifted fiber grating can be replaced by fiber grating Fabry Perot chamber.
The core concept of the present invention is: the laser of semiconductor laser outgoing, becomes line polarized light after the optical fiber polarizer, after λ/4 wave plate, becomes circularly polarized light (or elliptically polarized light).If this circularly polarized light (or elliptically polarized light) is phase-shifted fiber grating reflection, line polarized light is become after being again passed through λ/4 wave plate, but at this moment polarization angle 90-degree rotation, vertical with the printing opacity direction of the optical fiber polarizer, thus the optical fiber polarizer can not be passed through and be depleted.If this circularly polarized light (or elliptically polarized light) is through described phase-shifted fiber grating, and become line polarized light after the 2nd λ/4 wave plate, after the described inclined bragg grating reflection of guarantor, line polarized light is become successively again through after the 2nd λ/4 wave plate, phase-shifted fiber grating, λ/4 wave plate, at this moment line polarized light is identical with former polarization direction, it is possible to through the optical fiber polarizer and enter in semiconductor laser.The inclined bragg grating of described guarantor is designed to partially reflective, and the inclined bragg grating of this guarantor of laser light also exports through output polarization maintaining optical fibre.So, utilize λ/4 wave plate and the polarization characteristic of the optical fiber polarizer, filter the laser of phase-shifted fiber grating reflection, it is achieved that utilize the transmission peaks of phase-shifted fiber grating to carry out the purpose of bulk of optical feedback.
Advantages of the present invention is as follows:
With compared with first technology 1, the external cavity feedback semiconductor laser based on phase-shifted fiber grating of the present invention, the optical fiber polarizer, λ/4 wave plate, phase-shifted fiber grating, the 2nd λ/4 wave plate, protect inclined bragg grating, output polarization maintaining optical fibre be all welded together.The commercial Polarization Maintaining Optical Fiber Fusion Splicer utilizing present technical maturity by lossless for these elements welding, can solve the problem that space optical path regulates light path.All it is welded together owing to feeding back required element, eliminates the environmental factorss such as air flowing, mechanical vibration to the impact of optical coupling between these elements.And due to unlike space optical path is all discrete device, also without etalon effect between different components, it is not necessary to plating anti-reflection film.Additionally, these device sizes are smaller, compact conformation, it is simple to encapsulation.
With compared with first technology 2, the external cavity feedback semiconductor laser based on phase-shifted fiber grating of the present invention, utilize the transmission peaks of phase-shifted fiber grating to achieve the purpose of bulk of optical feedback.Owing to the transmission peaks of phase-shifted fiber grating is very narrow, it is generally tens megahertzs, the quality factor of resonator cavity will be greatly enhanced, thus improving the ratio of ECLD linewidth compression further.Owing to transmission peaks has significantly high extinction ratio, light wave transmitance outside transmission peaks is almost nil, it is to avoid high light feeds back the wild effect brought.
The external cavity feedback semiconductor laser based on phase-shifted fiber grating of the present invention, the described optical fiber polarizer and λ/4 wave plate eliminate the left side of semiconductor laser and the etalon effect of phase-shifted fiber grating.The light becoming vertical with original polarization direction after being phase-shifted fiber grating reflection from the line polarized light of semiconductor laser outgoing can not pass through the optical fiber polarizer thus being depleted.In like manner, the 2nd λ/4 wave plate and the inclined bragg grating of guarantor eliminate phase-shifted fiber grating and protect the etalon effect of inclined bragg grating.After the 2nd λ/4 wave plate, circularly polarized light (or elliptically polarized light) is become by the laser protecting the reflection of inclined bragg grating, this circularly polarized light (or elliptically polarized light) becomes line polarized light through the 2nd λ/4 wave plate after being phase-shifted fiber grating reflection again, but at this moment polarization direction is with original vertical, will completely through protecting inclined bragg grating without again being reflected.
Accompanying drawing explanation
Fig. 1 is the present invention structural representation based on the external cavity feedback semiconductor laser most preferred embodiment of phase-shifted fiber grating；
Fig. 2 is transmission spectrum (402) and the reflectance spectrum (401) of phase-shifted fiber grating；
Fig. 3 is narrow-linewidth laser output spectrum schematic diagram involved in the present invention, and 301 is the transmission spectrum of the phase-shifted fiber grating adopted, the laser that 302 is laser instrument output；
Detailed description of the invention
Below in conjunction with drawings and Examples, the present invention is further illustrated, but protection scope of the present invention is not limited to this.Should be appreciated that specific embodiment described herein is used only for explaining the present invention, do not limit the present invention.
Fig. 1 is the present invention structural representation based on the most preferred embodiment of the external cavity feedback semiconductor laser of phase-shifted fiber grating, as seen from the figure, the present invention is based on the external cavity feedback semiconductor laser of phase-shifted fiber grating, including semiconductor laser 1, temperature controller 8 and packaging part 9, described temperature controller 8 is set in described packaging part 9, this temperature controller 8 sets gradually semiconductor laser 1, the optical fiber polarizer 2, oneth λ/4 wave plate 3, phase-shifted fiber grating 4, 2nd λ/4 wave plate 5 and the inclined bragg grating 6 of guarantor and output polarization maintaining optical fibre 7, described phase-shifted fiber grating 4 is engraved on a section single-mould fiber, described inclined bragg grating 6 of protecting is engraved on one end of another section of polarization maintaining optical fibre 7.
Described semiconductor laser 1 is the semiconductor laser 1 of Single-end output, wherein one end plating high-reflecting film, near one end of grating plating anti-reflection film, so makes the laser output as much as possible produced；
The described optical fiber polarizer 2, is primarily to the laser that isolation reflects from phase-shifted fiber grating, it is prevented that it enters the behavior of noise spectra of semiconductor lasers 1 in semiconductor gain chip and produces impact；
Described λ/4 wave plate 3 and the 2nd λ/4 wave plate 5, the line polarized light by this wave plate is made to become circularly polarized light, the two λ/4 wave plate coordinates the optical fiber polarizer 2 and phase-shifted fiber grating 4 to use so that unwanted feedback light can not feed back to the active area of semiconductor laser 1.Wherein, the optical fiber polarizer 2 and λ/4 wave plate 3 eliminate the left side of semiconductor laser 1 and the etalon effect of phase-shifted fiber grating 4.The light becoming vertical with original polarization direction after being phase-shifted fiber grating 4 reflection from the linearly polarized laser of semiconductor laser 1 outgoing can not pass through the optical fiber polarizer 2 thus being depleted.In like manner, the 2nd λ/4 wave plate 5 and the inclined bragg grating 6 of guarantor eliminate phase-shifted fiber grating 4 and protect the etalon effect of inclined bragg grating 6.Circularly polarized light is become after protecting laser light the 2nd λ/4 wave plate 5 that inclined bragg grating 6 reflects, this circularly polarized light becomes line polarized light through the 2nd λ/4 wave plate 5 after being phase-shifted fiber grating 4 reflection again, but at this moment the direction of this line polarized light vertical with original polarization direction and completely through the inclined bragg grating 6 of guarantor without again being reflected
The bandwidth of the transmission peaks of described phase-shifted fiber grating 4 tens megahertzs will be greatly enhanced the quality factor of resonator cavity, thus improving the ratio of ECLD linewidth compression further.
The inclined bragg grating 6 of described guarantor, it is different that it is designed to the luminous reflectance to different polarization states, if the light on slow axis is designed to partially reflective by it, so that the light on fast axle is then wholly transmissive, if the light on fast axle is designed to partially reflective, then the light on slow axis is then wholly transmissive.Partly in order to reflecting part laser enters semiconductor laser 1 as feedback laser, will by exporting polarization maintaining optical fibre 7 as output through the laser protecting inclined bragg grating 6；On the other hand, the inclined bragg grating 6 of described guarantor and the 2nd λ/4 wave plate 5 combined effect, to eliminate the etalon effect protected between inclined bragg grating 6 and phase-shifted fiber grating 5.
Described temperature controller 8, is primarily to control semiconductor laser 1, the optical fiber polarizer 2, phase-shifted fiber grating the 4, the 2nd λ/4 wave plate 5 and protects stablizing of inclined bragg grating 6, thus ensureing the stable output of laser instrument.
The present embodiment is the device of all-fiber.
The external cavity feedback semiconductor laser based on phase-shifted fiber grating of the lower surface analysis present invention is embodied as step:
1, being welded together with the optical fiber polarizer 2 and phase-shifted fiber grating 4 respectively by λ/4 wave plate 3 made by polarization maintaining optical fibre, wherein the angle between slow-axis direction and the printing opacity direction of the optical fiber polarizer 2 of λ/4 wave plate 3 is 45 ° or 135 °.Again the other end of phase-shifted fiber grating 4 and the 2nd λ/4 wave plate 5 are welded together, then the other end of the 2nd λ/4 wave plate 5 and the inclined bragg grating 6 of guarantor being welded together, wherein the angle between slow-axis direction and the slow-axis direction protecting inclined bragg grating 6 of the 2nd λ/4 wave plate 5 is 45 ° or 135 °.
2, the transmission spectrum of said elements made with spectrogrph test, as in figure 2 it is shown, 402 be wherein the transmission spectrum of phase-shifted fiber grating 4 used.What spectrogrph adopted is the high accuracy spectrogrph that model is AP-2041B of APEXTechnologies company production, its full accuracy reaches 0.04pm, the optical fiber polarizer 2 is linked into the tunable outfan of spectrogrph rear board by flange, output polarization maintaining optical fibre 7 is linked into the input of spectrogrph front panel by flange, with the TRAC1 of spectrogrph, the transmission spectrum of said elements is measured, fixing display on spectrogrph.
3, undertaken drawing cone to process by one end of non-for the optical fiber polarizer 2 welding, form conical head as shown in Figure 1, its purpose is to better couple with semiconductor laser 1.
4, said elements is put on adjustment frame, and outfan is accessed light power meter by flange, open the drive circuit (now laser instrument is within packaging part) of semiconductor laser 1, regulating electric current makes it be operated in more than threshold value, carefully regulate the distance between conical head and the semiconductor chip 1 of the optical fiber polarizer 2 and direction so that on light power meter, see that laser output is maximum；At this moment, output polarization maintaining optical fibre 7 is passed through flange and accesses the input of spectrogrph front panel, and measure with the TRAC2 of spectrogrph, carefully regulate the electric current of semiconductor laser 1 again, output it laser and be adjusted near transmission peaks, now it can be seen that obvious linewidth compression effect, as shown in Figure 3.
5, it is encapsulated in fixing for above-mentioned device within packaging part 9.
The present invention can realize the semiconductor laser of narrow linewidth output, can be applicable to the numerous areas such as Microwave photonics, high-resolution laser spectroscopy, cold atomic clock, Fibre Optical Sensor, fiber optic communication.Although with reference to above-mentioned specific embodiment detailed describe the present invention, it should be understood that the above scheme of the present invention all can carry out multiple expansion or deformation, such as, phase-shifted fiber grating 4 replaceable forming fibre-optic grating Fabry Perot chamber, angle between slow-axis direction and the printing opacity direction of the optical fiber polarizer 2 of the oneth λ/4 wave plate 3 is also not necessarily limited to 45 ° or 135 °, in fact, as long as the unspecified angle beyond 0 ° or 90 ° is all possible, it is intended merely to best effect, embodiment adopts 45 ° or 135 °.Be it should be understood that the above is the instantiation of the present invention, be not limited to the present invention, all make within the spirit of the invention any amendment, equivalent replacement, improvement etc., should be included within protection scope of the present invention.
Claims (6)
1. the external cavity feedback semiconductor laser based on phase-shifted fiber grating, including semiconductor laser (1), temperature controller (8) and packaging part (9), it is characterized in that, described temperature controller (8) is set in described packaging part (9), this temperature controller (8) sets gradually semiconductor laser (1), the optical fiber polarizer (2), oneth λ/4 wave plate (3), phase-shifted fiber grating (4), 2nd λ/4 wave plate (5) and protect inclined bragg grating (6) and export polarization maintaining optical fibre (7), described phase-shifted fiber grating (4) is engraved on a section single-mould fiber, the inclined bragg grating of described guarantor (6) is engraved on one end of another section of polarization maintaining optical fibre (7).
2. the external cavity feedback semiconductor laser based on phase-shifted fiber grating according to claim 1, it is characterised in that described semiconductor laser is DFB semiconductor laser or dbr semiconductor laser instrument, the left side plating high-reflecting film of described semiconductor laser.
3. the external cavity feedback semiconductor laser based on phase-shifted fiber grating according to claim 1, it is characterised in that described λ/4 wave plate (3) and the 2nd λ/4 wave plate (5) are made up of polarization maintaining optical fibre.
4. the external cavity feedback semiconductor laser based on phase-shifted fiber grating according to claim 1, it is characterised in that the angle of the slow-axis direction of the printing opacity direction of the described optical fiber polarizer (2) and described λ/4 wave plate (3) is 45 ° or 135 °.
5. the external cavity feedback semiconductor laser based on phase-shifted fiber grating according to claim 1, it is characterised in that the angle of the slow-axis direction of the slow-axis direction of the inclined bragg grating of described guarantor (6) and the 2nd described λ/4 wave plate (5) is 45 ° or 135 °.
6. the external cavity feedback semiconductor laser based on phase-shifted fiber grating according to any one of claim 1 to 5, it is characterised in that described phase-shifted fiber grating (4) can be replaced by fiber grating Fabry Perot chamber.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106129806A (en) * | 2016-08-29 | 2016-11-16 | 中国科学院半导体研究所 | Based on external cavity type narrow linewidth Distributed Bragg Reflection semiconductor laser |
| CN110429467A (en) * | 2019-07-15 | 2019-11-08 | 中国科学院上海光学精密机械研究所 | Integrated external cavity semiconductor laser without mode hopping frequency modulation control method |
| CN117706687A (en) * | 2023-12-25 | 2024-03-15 | 广东奥斯诺工业有限公司 | All-fiber nonmagnetic isolator and preparation method thereof |
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Application publication date: 20160706 |