CN105742414A - Flexible film for micro/nano PSS preparation and preparation method of flexible film - Google Patents
Flexible film for micro/nano PSS preparation and preparation method of flexible film Download PDFInfo
- Publication number
- CN105742414A CN105742414A CN201610103730.3A CN201610103730A CN105742414A CN 105742414 A CN105742414 A CN 105742414A CN 201610103730 A CN201610103730 A CN 201610103730A CN 105742414 A CN105742414 A CN 105742414A
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- Prior art keywords
- mantle
- flexible film
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- micro
- film
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Moulds For Moulding Plastics Or The Like (AREA)
Abstract
The invention relates to a preparation method of a flexible film for micro/nano PSS preparation. The method comprises the following steps: firstly, preparing a hard film with an Si or SiC substrate; preparing a flexible film semi-finished product according to the prepared hard film by a resin injection molding method; coating the flexible film semi-finished product with a high-reflectivity metal film which is more than 150nm in thickness; and then removing the to-be-exposed metal film by a dry ICP etching method, so as to form the required flexible film. The invention further relates to the flexible film prepared by the preparation method of the flexible film for micro/nano PSS preparation. The flexible film comprises a main flexible film body, a comb group and the high-reflectivity metal film, wherein the high-reflectivity metal film covers grooves formed by two adjacent combs. The flexible film and the preparation method thereof have the advantages that when exposure treatment is carried out by the prepared flexible film, exposure can be carried out without a contact of the flexible film and a photoresist; the pollution of the photoresist on the flexible film is effectively avoided; and the service lifetime of the flexible film is prolonged.
Description
Technical field
The present invention relates to a kind of micro-nano PSS preparation mantle, further relate to the manufacture method of above-mentioned micro-nano PSS preparation mantle.
Background technology
Light emitting diode (LED) is a kind of electro-optic conversion, energy-efficient, environmental protection, the advantages such as life-span length, indicate in traffic, indoor outer total colouring, the aspects such as LCD TV backlight source have a wide range of applications, semiconductor solid lighting can be realized particularly with LED, it is expected to become a new generation's light source and enters huge numbers of families, the mankind are caused to illuminate the revolution in history, the blue-light LED chip of Sapphire Substrate growing gallium nitride extension wherein applies yellow fluorescent powder, blue-light excited fluorescent material sends gold-tinted, blue light and yellow light mix obtain white light, thus obtaining white light with blue-ray LED.Gallium nitride substrate material is common two kinds, i.e. sapphire and carborundum, carborundum machining property is poor, expensive and patent aspect problem makes it apply to be limited, therefore the substrate being currently used in GaN epitaxial growth is mainly sapphire, and epitaxial layer of gallium nitride and sapphire lattice mismatch are quite big, and residualinternal stress is bigger, so growing gallium nitride easily causes substantial amounts of defect on sapphire, and these defects are substantially reduced luminescent device luminous efficiency；There is the difference of bigger refractive index between GaN and air, light shooting angle is less, and significant portion is totally reflected back to inside LED chip simultaneously, reduces the extraction efficiency of light, increases heat radiation difficulty, affects the reliability of LED component.Employing nanoscale PPS substrate technology can be substantially reduced the density of the dislocation of nitride material, the residualinternal stress produced when relaxing epitaxial growth, improves internal quantum efficiency, and light extraction efficiency is substantially improved.
In carrying out the micro-nano PSS process prepared, when being exposed processing, need mantle and glue deep contact, and mantle is generally adopted resin material, therefore can cause that mantle is polluted by glue, also reduce the service life of mantle simultaneously, in order to improve the service life of mantle, the preparation method now working out a kind of new micro-nano PSS, when being exposed processing, mantle only micro-with glue need to contact and can realize being exposed unexposed area, region, hence for the improvement of this technique, it is necessary to study a kind of new mantle.
Summary of the invention
The technical problem to be solved in the present invention is to provide a kind of micro-nano PSS preparation mantle and the manufacture method of above-mentioned micro-nano PSS preparation mantle.
For solving above-mentioned technical problem, the technical scheme is that a kind of micro-nano PSS preparation mantle manufacture method, its innovative point is in that: comprise the steps:
A) prepared by dura mater: first, adopts Si or SiC substrate to prepare dura mater according to required figure；
B) prepared by mantle: utilize resin injection molding to prepare mantle semi-finished product according to the dura mater of preparation；
C) metal-coated membrane: plate a layer thickness high-reflectivity metal film at more than 150nm on mantle semi-finished product；
D) metal film is removed: adopt dry method ICP etching to remove the metal film that need to expose place, thus forming required mantle.
Further, in described step c, adopting electron beam evaporation plating or magnetron sputtering method metal-coated membrane, plated film speed is 5A/S.
Further, in described step d, the etch rate 10A/S of dry method ICP etching.
A kind of mantle utilizing above-mentioned micro-nano PSS preparation mantle manufacture method to prepare, its innovative point is in that: include a mantle main body, and this mantle main body is rectangular-shaped, and the side of the long axis direction of mantle main body is provided with comb group；Described comb group is collectively formed by some comb being equally spaced side by side, the inwall of the groove formed at two adjacent comb is additionally provided with high reflecting metal layer, and high reflecting metal layer covers the groove that adjacent two comb are formed.
It is an advantage of the current invention that: the mantle in the present invention, the inwall of the groove by being formed at adjacent comb sets up high reflecting metal layer, when being exposed processing, light is through mantle, part light can be stopped by high reflecting metal layer, can be formed and be exposed unexposed area, region, it is not necessary to mantle deeply contacts with glue, improve the service life of mantle.
By high reflecting metal layer being covered the design of the groove that adjacent two comb are formed, it is to avoid light, arriving situation about penetrating from the sidewall of comb between glue, is wholly constrained in figure, effectively improves graphics resolution by light.
Accompanying drawing explanation
Below in conjunction with the drawings and specific embodiments, the present invention is further detailed explanation.
Fig. 1-Fig. 4 is the preparation flow figure of the mantle of the present invention.
Detailed description of the invention
The following examples can make professional and technical personnel more fully understand the present invention, but does not therefore limit the present invention among described scope of embodiments.
A kind of mantle as shown in Figure 4, including a mantle main body 10, comb group and high reflecting metal layer 11.
This mantle main body 10, in rectangular-shaped, is provided with comb group in the side of the long axis direction of mantle main body 10.
Comb group is collectively formed by some comb being equally spaced side by side, the inwall of the groove formed at two adjacent comb is additionally provided with high reflecting metal layer 11, and high reflecting metal layer 11 covers the groove that adjacent two comb are formed.
Above-mentioned mantle is prepared by following method:
The first step, prepared by dura mater: first, adopts Si or SiC substrate to prepare dura mater according to required figure, as shown in Figure 1.
Second step, prepared by mantle: utilize resin injection molding to prepare mantle semi-finished product according to the dura mater of preparation, as shown in Figure 2.
3rd step, metal-coated membrane: adopting electron beam evaporation plating or magnetron sputtering method to plate a layer thickness high-reflectivity metal film at more than 150nm on mantle semi-finished product, plated film speed is 5A/S, as shown in Figure 3.
4th step, removes metal film: adopt dry method ICP etching to remove the metal film that need to expose place, etch rate 10A/S, thus forming required mantle, as shown in Figure 4.
Skilled person will appreciate that of the industry; the present invention is not restricted to the described embodiments; described in above-described embodiment and description is that principles of the invention is described; without departing from the spirit and scope of the present invention; the present invention also has various changes and modifications, and these changes and improvements both fall within the claimed scope of the invention.Claimed scope is defined by appending claims and equivalent thereof.
Claims (4)
1. mantle manufacture method is used in a micro-nano PSS preparation, it is characterised in that: comprise the steps:
A) prepared by dura mater: first, adopts Si or SiC substrate to prepare dura mater according to required figure；
B) prepared by mantle: utilize resin injection molding to prepare mantle semi-finished product according to the dura mater of preparation；
C) metal-coated membrane: plate a layer thickness high-reflectivity metal film at more than 150nm on mantle semi-finished product；
D) metal film is removed: adopt dry method ICP etching to remove the metal film that need to expose place, thus forming required mantle.
2. micro-nano PSS preparation mantle manufacture method according to claim 1, it is characterised in that: in described step c, adopting electron beam evaporation plating or magnetron sputtering method metal-coated membrane, plated film speed is 5A/S.
3. micro-nano PSS preparation mantle manufacture method according to claim 1, it is characterised in that: in described step d, the etch rate 10A/S of dry method ICP etching.
4. the mantle that the micro-nano PSS preparation mantle manufacture method that a kind utilizes described in claim 1 prepares, it is characterised in that: including a mantle main body, this mantle main body is rectangular-shaped, and the side of the long axis direction of mantle main body is provided with comb group；Described comb group is collectively formed by some comb being equally spaced side by side, the inwall of the groove formed at two adjacent comb is additionally provided with high reflecting metal layer, and high reflecting metal layer covers the groove that adjacent two comb are formed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610103730.3A CN105742414A (en) | 2016-02-26 | 2016-02-26 | Flexible film for micro/nano PSS preparation and preparation method of flexible film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610103730.3A CN105742414A (en) | 2016-02-26 | 2016-02-26 | Flexible film for micro/nano PSS preparation and preparation method of flexible film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105742414A true CN105742414A (en) | 2016-07-06 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610103730.3A Pending CN105742414A (en) | 2016-02-26 | 2016-02-26 | Flexible film for micro/nano PSS preparation and preparation method of flexible film |
Country Status (1)
| Country | Link |
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| CN (1) | CN105742414A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4897325A (en) * | 1985-11-18 | 1990-01-30 | The Perkin-Elmer Corporation | Contact lithographic fabrication of patterns on large optics |
| CN1800973A (en) * | 2005-01-04 | 2006-07-12 | 三星Sdi株式会社 | Flexible optical mask for lithographic and method producing same and patterning method |
| KR20140038309A (en) * | 2012-09-20 | 2014-03-28 | 내셔널 청쿵 유니버시티 | Metal-embedded photomask and manufacturering method thereof |
-
2016
- 2016-02-26 CN CN201610103730.3A patent/CN105742414A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4897325A (en) * | 1985-11-18 | 1990-01-30 | The Perkin-Elmer Corporation | Contact lithographic fabrication of patterns on large optics |
| CN1800973A (en) * | 2005-01-04 | 2006-07-12 | 三星Sdi株式会社 | Flexible optical mask for lithographic and method producing same and patterning method |
| KR20140038309A (en) * | 2012-09-20 | 2014-03-28 | 내셔널 청쿵 유니버시티 | Metal-embedded photomask and manufacturering method thereof |
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Application publication date: 20160706 |