CN105742390B - A kind of overlapping thin film solar battery and preparation method thereof - Google Patents
A kind of overlapping thin film solar battery and preparation method thereof Download PDFInfo
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- 239000010409 thin film Substances 0.000 title claims abstract description 25
- 238000002360 preparation method Methods 0.000 title claims abstract description 10
- 239000004065 semiconductor Substances 0.000 claims abstract description 81
- 239000000758 substrate Substances 0.000 claims abstract description 39
- 238000000034 method Methods 0.000 claims abstract description 37
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 21
- 229910052738 indium Inorganic materials 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 17
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 16
- 229910052733 gallium Inorganic materials 0.000 claims description 14
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- 239000000126 substance Substances 0.000 claims description 13
- 230000005611 electricity Effects 0.000 claims description 7
- 239000010408 film Substances 0.000 claims description 7
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- 230000005540 biological transmission Effects 0.000 abstract description 2
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- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical group [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- 229910052719 titanium Inorganic materials 0.000 description 6
- 230000008569 process Effects 0.000 description 5
- 229910004611 CdZnTe Inorganic materials 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
- 238000010276 construction Methods 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 239000011733 molybdenum Substances 0.000 description 4
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- 229910052802 copper Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
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- 238000006243 chemical reaction Methods 0.000 description 2
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- 229910052710 silicon Inorganic materials 0.000 description 2
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- 229910017612 Cu(In,Ga)Se2 Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention discloses a kind of overlapping thin film solar battery, including substrate and the back electrode being set in turn on substrate, bottom battery, top battery and Window layer, tunnel knot is provided between bottom battery and top battery, tunnel knot includes n+ type semiconductor layers and p+ type semiconductor layers, n+ type semiconductor layers contact with the n-type semiconductor layer of bottom battery, and p+ type semiconductor layers contact with pushing up the p-type semiconductor layer of battery；The preparation method of said structure is additionally provided simultaneously, and the present invention connect between bottom battery and top battery using the form of tunnel knot, realizes being conductively connected between two batteries, the mode of relative mechanical lamination is more convenient for adjusting optics transmission and resistivity.Meanwhile the present invention realizes the continuous growth of lamination using suitable tunnel knot, processing step is reduced relative to mechanical laminated method, and adds the reliability of battery, integral battery door efficiency is lifted, carrier Interface composites can be weakened.
Description
Technical field
The present invention relates to technical field of thin-film solar, and in particular to a kind of overlapping thin film solar battery and its system
Preparation Method.
Background technology
In order to widen the absorption region of solar cell material, usually using the solar energy materials lamination knot of different band gap
Structure.Solar spectrum can be regarded as to some sections, long-wave band is absorbed using low bandgap material, broad-band gap material is used for short-wave band
Material absorbs, and can greatly improve performance and stability.
For hull cell, the laminated construction continuously grown is mainly used in the solar energy of silicon substrate and III-V
On battery.The world record of wherein silicon substrate lamination solar cell is kept by LG company, basic structure a-Si:H/nc-Si:H/
nc-Si:H, 13.4% electricity conversion is had been achieved with present；The laminated cell world record of III-V is
The InGaP/GaAs/InGaAs batteries of sharp companies, electricity conversion reaches 44.4% under the conditions of 302 times of optically focused.And
Continuous growth laminated construction main factor for development is restricted in copper-indium-galliun-selenium film solar cell Cu (In, Ga) Se2Band gap
Being limited in 1.04-1.67ev scopes can not be directly applied in more sub- batteries.Even if by the CuGaSe of broad-band gap2As top
Battery, due to Cu (In, Ga) Se2Itself the defects of, p-type semiconductor layer can be only formed using common CVD and PVD modes, very
It is difficult to carry out highly doped formation p+ type semiconductor layers by mixing other elements, so being hardly formed with Cu (In, Ga) Se2Tunnel
Road knot.
So the conventional patent document of lamination copper-indium-galliun-selenium film solar cell is mainly mechanical laminated mode at present,
Such as patent CN101097968A.By two independent one broad-band gaps of solar cell, a narrow band gap, the mode of bonding is used
Press together to form laminated construction.The band gap of general top battery and bottom battery is respectively 1.7ev and 1.0ev.Mechanical laminated
Although mode can realize that the solar energy materials of different band gap absorbs the light of different-waveband, there is great limitation, for example bond
Material will certainly absorb the sunshine of a part, cause certain optical loss, the length of the mode of this bonding to whole battery
Phase stability will also result in some risks.Connection of the sealant used in CN101097968A as top layer and bottom cell,
Transmitance can be poor, and the life-span is than relatively low.Further, since coupling part is non-conductive, it is necessary to which extra extraction electrode again, is also increased
Contact resistance and the risk of loose contact, while solar cell is sensitive to temperature and material cross pollution, so being not suitable for
Direct precipitation top battery on the battery of bottom.
In addition, there is an other patent to refer to the laminated construction continuously grown, for example refer in CN102945893A
Using nanometer metallic film and transparent metal oxide electrode combination.Nanometer metallic film can not adjust well electric current by with
The problem of light penetration.
The content of the invention
Therefore, present invention aims at a kind of overlapping thin film solar battery and preparation method thereof is provided, by suitable
Tunnel knot material and film layer structure, the overlapping thin film solar battery continuously grown is realized, lift integral battery door performance.
Used technical scheme is as described below：
On the one hand, the invention provides a kind of overlapping thin film solar battery, a kind of overlapping thin film solar battery, including
Substrate and it is sequentially overlapped the back electrode being arranged on the substrate, bottom battery, top battery, Window layer and front electrode, the bottom
Tunnel knot is provided between battery and top battery, the band gap of the bottom battery is less than the band gap of the top battery；Described bottom battery and
Push up battery to form by p-type semiconductor layer and n-type semiconductor layer, the tunnel knot includes n+ type semiconductor layers and p+ type semiconductors
Layer, the n+ type semiconductor layers contact with the n-type semiconductor layer in the bottom battery, the p+ type semiconductor layers and the top electricity
The p-type semiconductor layer contact in pond.
The tunnel knot is made up of wide bandgap material, and its doping concentration is more than absorbed layer in the top battery and bottom battery
Doping concentration.
Become p+-Cd in described tunnelxZn1-xTe and n+-CdS, wherein x=0-1, its thickness are 10-50nm.
The absorbed layer band gap of the bottom battery is 1.0-1.2eV Cu (In, Ga) Se2, the absorbed layer band of the top battery
Gap is 1.6-1.8eV CdxZn1-xTe。
The substrate is flexible substrate.
The substrate is metal foil substrate or polyimide substrate.
The first window layer and the second Window layer that described Window layer is made up of the semi-conducting material of broad-band gap, described first
Window layer is arranged on the top battery, and it is intrinsic metal conductive oxide layer, and second Window layer is arranged at described
On first window layer, it is the composite conductive layers of n-type doping.
On the other hand, present invention also offers a kind of preparation method of overlapping thin film solar battery, specifically include following
Step：
Step 1, back electrode is formed on substrate by magnetically controlled sputter method；
Step 2, the p-type semiconductor layer of bottom battery is formed by magnetron sputtering or the method for coevaporation on back electrode；
Step 3, in the p-type semiconductor layer of bottom battery, bottom battery is formed by the method for magnetron sputtering or chemical bath
N-type semiconductor layer；
Step 4, in the n-type semiconductor layer of bottom battery, by magnetron sputtering, CVD or MBE (molecular beam epitaxy)
A kind of mode grows to form n+ type semiconductor layers and p+ type semiconductor layers successively, produces tunnel knot；
Step 5, in tunnel junctions, top is grown by a kind of mode in magnetron sputtering, CVD or MBE (molecular beam epitaxy)
The p-type semiconductor layer and n-type semiconductor layer of battery；
Step 6, top battery n-type semiconductor layer on by the method for magnetron sputtering or CVD formed intrinsic ZnO and
ZnO：Al, produce Window layer；
Step 7, the method in Window layer by silk-screen printing or with mask plating form front electrode.
Tunnel knot in the step 4 is made up of wide bandgap material, and its doping concentration is more than the top battery and bottom battery
The doping concentration of middle absorbed layer.
Become p+-Cd in described tunnelxZn1-xTe and n+-CdS, wherein x=0-1, its thickness are 10-50nm.
The absorbed layer band gap of the bottom battery is 1.0-1.2eV Cu (In, Ga) Se2, the absorbed layer band of the top battery
Gap is 1.6-1.8eV CdxZn1-xTe。
Substrate in the step 1 is flexible substrate, forms stop on flexible substrates by magnetically controlled sputter method first
Layer, then back electrode is formed on substrate by magnetically controlled sputter method.
In described step four and step 5, moving back containing doped chemical is carried out after the film layer grown using MBE modes again
Fiery step, i.e., under the atmosphere of doped chemical, annealed at 10 DEG C~150 DEG C.
The present invention has the advantages that relative to prior art：
A. the present invention is connected between bottom battery and top battery using the form of tunnel knot, being conductively connected between both realizations,
The mode of relative mechanical lamination is more convenient for adjusting optics transmission and resistivity.Meanwhile the present invention realizes lamination using tunnel knot
Continuous growth, processing step is reduced relative to mechanical laminated method, and add the reliability of battery, lifting integral battery door effect
Rate；In addition, the present invention can be adjusted using the tunnel knot of p-type and n-type material by doping concentration, carrier circle can be weakened
Face is compound.
B. the battery in the present invention is made up of the different battery of band gap, and the band gap for pushing up battery is more than the band gap of bottom battery, its
Absorption region is bigger；Cell substrate uses flexible substrate, can be wider in curved surface, use range by battery applications.
Brief description of the drawings
In order that present disclosure is more likely to be clearly understood, specific embodiment and combination below according to the present invention
Accompanying drawing, the present invention is further detailed explanation, wherein
Fig. 1 is the overlapping thin film solar battery structural representation provided by the present invention with tunnel knot；
Fig. 2 is CIGS/CdZnTe laminated cells structural representation provided by the present invention.
In figure：1- substrates；2- barrier layers；3- back electrodes；4- bottoms battery, 41-p type semiconductor layers, 42-n type semiconductors
Layer；5- tunnel knots, 51-n+ type semiconductor layers, 52-p+ type semiconductor layers；6- pushes up battery, 61-p type semiconductor layers, 62-n types half
Conductor layer；7- Window layers, 71- first window layers, the Window layers of 72- second；8- front electrodes.
Embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with accompanying drawing to embodiment party of the present invention
Formula is described in further detail.
As shown in Fig. 1 structures, the invention provides a kind of overlapping thin film solar battery, including substrate 1 and set gradually
In the back electrode 3 on substrate 1 from bottom to top, bottom battery 4, tunnel knot 5, top battery 6, Window layer 7 and front electrode 8, tunnel knot 5
Including n+ type semiconductor layers 51 and p+ type semiconductor layers 52, n+ type semiconductor layers 51 and the n-type semiconductor layer 42 of bottom battery 4 connect
Touch, p+ type semiconductor layers 41 contact with pushing up the p-type semiconductor layer 61 of battery 6.
Wherein the doping concentration of tunnel knot 5 is more than bottom battery 4 and pushes up the doping concentration in battery 6, and tunnel knot 5 is broadband
Gap material forms；Preferably, tunnel knot 5 uses p+-CdxZn1-xTe and n+-CdS, its thickness are 10-50nm.
In order that laminated cell is more flexible, substrate 1 is flexible substrate in the present invention, and its thickness is 10~100 μm.
Metal foil substrate or polyimide substrate are wherein preferably used, its thickness is 30-50 μm.
The thickness of its midsole battery 4 is 0.5-3 μm, and its absorbed layer band gap is the Cu (In, Ga) of 1.0-1.2eV scopes
Se2；It is 0.5-2 μm to push up the thickness of battery 6, Cd of its absorbed layer band gap in 1.6-1.8eV scopesxZn1-xTe。
In addition, the Window layer 72 of first window layer 71 and second that Window layer 7 is made up of the semi-conducting material of broad-band gap, first
Window layer 71 is arranged on the battery 6 of top, and it is intrinsic metal conductive oxide layer, and the second Window layer 72 is answering for n-type doping
Conductive layer is closed, is arranged on first window layer 71.
As shown in Fig. 2 by taking two junction batteries as an example, top battery obsorbing layer is CdxZn1-xTe, x=0.6-0.7, bottom battery are inhaled
Receipts layer is Cu (In, Ga) Se2.The manufacturing process of overlapping thin film solar battery is described below in detail.
Embodiment 1
【101】Form back electrode 3 on substrate 1 by magnetically controlled sputter method, it is 500nm that it, which prepares thickness,；
【102】The p type semiconductor layers of bottom battery 4 are formed by magnetron sputtering or the method for coevaporation on back electrode 3
41, i.e. p-type Cu (In, Ga) Se2Semiconductor layer, its thickness are 500nm, and doping concentration is in 1x1017cm-3, band gap 1.0eV, adopt
With Cu, In, Ga alloys targets, p-type Cu (In, Ga) Se is formed under air pressure 0.1Pa, Se atmosphere2Semi-conducting material absorbed layer, its
The Cu/ (In+Ga) of middle alloys target：Ga/ (In+Ga) changes in gradient, can be optimized according to Technical expression.
【103】In the p-type semiconductor layer 41 of bottom battery 4, bottom electricity is formed by the method for magnetron sputtering or chemical bath
The n-type semiconductor layer 42 in pond 4, i.e. n-type CdS cushions, using CdS targets, in air pressure 0.1Pa, Ar, O2, H2N-type is formed under atmosphere
CdS cushions, buffer layer thickness 30nm.
【104】In the n-type semiconductor layer 41 of bottom battery 4, grow to form p+- successively by magnetron sputtering mode
CdxZn1-xTe and n+-CdS, produces tunnel knot 5, and the thickness of tunnel knot 5 is 5nm；
【105】On tunnel knot 5, the p-type semiconductor layer 61 of top battery 6 is grown by magnetron sputtering mode and n-type is partly led
Body layer 62, its thickness are 250nm；
【106】Intrinsic ZnO and ZnO are formed by magnetically controlled sputter method on the battery 6 of top：Al, produce Window layer 7.Using
ZnO and ZnO:Al targets, ZnO and ZnO is formed under an ar atmosphere：Al Window layers, its thickness are respectively 200nm and 400nm.
【107】Method in Window layer 7 by silk-screen printing or with mask plating forms front electrode 8, front electricity
20 μm of 8 thickness of pole, so as to which CIGS/CdZnTe overlapping thin film solar batteries be made.
Embodiment 2
【201】In the metal foil substrate 1 that thickness is 50 μm, by the method for magnetron sputtering, using metal titanium targets, in gas
It is argon gas to press as 10Pa, process gas, prepares the metal titanium barrier layer 2 that thickness is 500nm.
【202】It is 10Pa in air pressure using molybdenum target by the method for magnetron sputtering on metal titanium barrier layer 2, technique
Gas is argon gas, prepare thickness be 700nm molybdenum as back electrode 3.
【203】On back electrode 3, by the method for magnetron sputtering, using Cu, In, Ga alloys targets, in air pressure 10Pa, Se
P-type Cu (In, Ga) Se is formed under atmosphere2Semiconductor layer.The Cu/ (In+Ga) of alloys target：Ga/ (In+Ga) changes in gradient, can
To be optimized according to Technical expression. Cu(In,Ga)Se2Semiconductor material thicknesses are in 2000nm.Doping concentration is 1x1017cm-3, band gap 1.2eV.
【204】In the p-type semiconductor layer 41 of bottom battery 4, using CdS targets, under air pressure 10Pa, Ar, O2、H2Under atmosphere
Form n-type semiconductor layer 42, i.e. n-type CdS cushions, buffering thickness 80nm.
【205】In the n-type semiconductor layer 42 of bottom battery 4, tunnel knot 5 is grown by MBE modes, process atmospheric pressures exist
1x10-6Pa, technological temperature are 400 DEG C, first grow n+ type semiconductor layers 51, i.e. n+-CdS, doped chemical In, doping concentration
For 1 × 1018cm-3, thickness 10nm；Then under In atmosphere, annealed at 150 DEG C.
【206】In n+ type semiconductor layers 51, p+ type semiconductor layers 52, i.e. p+-Cd are grown by MBE modesxZn1-xTe,
X=0.7, doped chemical As, doping concentration are 1 × 1019cm-3, thickness 20nm, then under As atmosphere, moved back at 150 DEG C
Fire.
【207】On tunnel knot 5, the p-type semiconductor layer 61 and n-type semiconductor layer of top battery 6 are grown by MBE modes
62, p-CdxZn1-xTe, x=0.6, doped chemical As, doping concentration are 1 × 1018 cm-3And n+-CdxZn1-xTe, x=0.6, mix
Miscellaneous element In, doping concentration are 1 × 1018cm-3, thickness is respectively 750nm and 500nm.
【208】By magnetically controlled sputter method on the battery 6 of top, using ZnO and ZnO:Al targets, ZnO is formed under Ar atmosphere
And ZnO：Al Window layers 7.Thickness is respectively 400nm, 600nm.
【209】Cu front electrodes 8,20 μm of thickness of electrode, so as to make are formed by method for printing screen in Window layer 7
Obtain CIGS/CdZnTe overlapping thin film solar batteries.
Embodiment 3
【301】On the stainless steel lining bottom 1 that thickness is 40 μm, by the method for magnetron sputtering, using metal titanium targets, in gas
It is the metal titanium barrier layer 2 that argon gas prepares that thickness is 400nm to press as 5Pa, process gas.
【302】It is 5Pa in air pressure using molybdenum target by the method for magnetron sputtering on metal titanium barrier layer 2, process gas
Body is that argon gas prepares molybdenum that thickness is 600nm as back electrode 3.
【303】On back electrode 3, by the method for magnetron sputtering, using Cu, In, Ga alloys targets, in air pressure 6Pa, Se gas
P-type Cu (In, Ga) Se is formed under atmosphere2Semiconductor layer.The Cu/ (In+Ga) of alloys target：Ga/ (In+Ga) changes in gradient.Cu
(In, Ga) Se2 semiconductor material thicknesses are 1000nm, and doping concentration is in 1x1017cm-3, band gap 1.1eV.
【304】In the p-type semiconductor layer 41 of bottom battery 4, using CdS targets, in air pressure 6Pa, Ar, O2, H2Shape under atmosphere
Into n-type semiconductor layer 42, i.e. n-type CdS cushions, buffering thickness 50nm.
【305】In the n-type semiconductor layer 42 of bottom battery 4, tunnel knot 5 is grown by MBE modes, process atmospheric pressures exist
1x10-5Pa .Technological temperature is 300 DEG C.First grow n+ type semiconductor layers 51, i.e. n+-CdS, doped chemical In, doping concentration
For 4 × 1018cm-3, thickness 8nm；Then under In atmosphere, annealed at 10 DEG C.
【306】In n+ type semiconductor layers 51, p+ type semiconductor layers 52, i.e. p+-Cd are grown by MBE modesxZn1-xTe,
X=0.6, doped chemical As, doping concentration are 4 × 1019cm-3, thickness 15nm；Then under As atmosphere, moved back at 10 DEG C
Fire.
【307】On tunnel knot 5, the p-type semiconductor layer 61 and n-type semiconductor layer of top battery 6 are grown by MBE modes
62, p-CdxZn1-xTe, x=0.7, doped chemical As, doping concentration are 5 × 1017cm-3And n+-CdxZn1-xTe, x=0.7, mix
Miscellaneous element In, doping concentration are 5 × 1018cm-3.Thickness is respectively 500nm, 300nm
【308】By magnetically controlled sputter method on the battery 6 of top, using ZnO and ZnO:Al targets, ZnO is formed under Ar atmosphere
And ZnO：Al Window layers 7.Thickness is respectively 300nm, 500nm.
【309】Cu front electrodes 8,20 μm of thickness of electrode, so as to make are formed by method for printing screen in Window layer 8
Obtain CIGS/CdZnTe overlapping thin film solar batteries.
Obviously, above-described embodiment is only intended to clearly illustrate example, and is not the restriction to embodiment.It is right
For those of ordinary skill in the art, can also make on the basis of the above description it is other it is various forms of change or
Change.There is no necessity and possibility to exhaust all the enbodiments.And the obvious change thus extended out or
Among changing still in protection scope of the present invention.
Claims (9)
1. a kind of preparation method of overlapping thin film solar battery, it is characterised in that specifically include following steps：
Step 1, back electrode is formed on substrate by magnetically controlled sputter method；
Step 2, the p-type semiconductor layer of bottom battery is formed by magnetron sputtering or the method for coevaporation on back electrode；
Step 3, in the p-type semiconductor layer of bottom battery, the n of bottom battery is formed by the method for magnetron sputtering or chemical bath
Type semiconductor layer, the absorbed layer band gap of the bottom battery are 1.0-1.2eV Cu (In, Ga) Se2；
Step 4, in the n-type semiconductor layer of bottom battery, pass through one kind in magnetron sputtering, CVD or MBE (molecular beam epitaxy)
Mode grows to form n+-CdS and p+-Cd successivelyxZn1-xTe tunnel knot；The thickness of the tunnel knot is 10-50nm；
Step 5, in tunnel junctions, top battery is grown by a kind of mode in magnetron sputtering, CVD or MBE (molecular beam epitaxy)
P-type semiconductor layer and n-type semiconductor layer, it is described top battery absorbed layer band gap be 1.6-1.8eV CdxZn1-xTe；
Step 6, intrinsic ZnO and ZnO are formed by the method for magnetron sputtering or CVD in the n-type semiconductor layer of top battery：
Al, produce Window layer；
Step 7, the method in Window layer by silk-screen printing or with mask plating form front electrode.
2. the preparation method of overlapping thin film solar battery according to claim 1, it is characterised in that in the step 4
Tunnel knot be made up of wide bandgap material, its doping concentration be more than it is described top battery and bottom battery in absorbed layer doping concentration.
3. the preparation method of overlapping thin film solar battery according to claim 1, it is characterised in that in the step 1
Substrate be flexible substrate, barrier layer is formed by magnetically controlled sputter method on flexible substrates first, then pass through magnetron sputtering side
Method forms back electrode on substrate.
4. the preparation method of overlapping thin film solar battery according to claim 1, it is characterised in that described step four
In step 5, the annealing steps containing doped chemical are carried out after the film layer grown using MBE modes again, i.e., in doped chemical
Under atmosphere, annealed at 10 DEG C -150 DEG C.
5. a kind of overlapping thin film solar battery, including substrate and it is sequentially overlapped the back electrode being arranged on the substrate, bottom electricity
Pond, top battery, Window layer and front electrode, it is characterised in that tunnel knot, the bottom electricity are provided between the bottom battery and top battery
The band gap in pond is less than the band gap of the top battery；Described bottom battery and top battery are by p-type semiconductor layer and n-type semiconductor layer
Composition, the tunnel knot include n+ type semiconductor layers and p+ type semiconductor layers, in the n+ type semiconductor layers and the bottom battery
N-type semiconductor layer contact, the p+ type semiconductor layers with it is described push up battery p-type semiconductor layer contact；The bottom battery
Absorbed layer band gap is 1.0-1.2eV Cu (In, Ga) Se2, it is described top battery absorbed layer band gap be 1.6-1.8eV CdxZn1- xTe；Become p+-Cd in described tunnelxZn1-xTe and n+-CdS, wherein x=0-1, its thickness are 10-50nm.
6. overlapping thin film solar battery according to claim 5, it is characterised in that the tunnel knot is by wide bandgap material
Composition, its doping concentration are more than the doping concentration of absorbed layer in the top battery and bottom battery.
7. overlapping thin film solar battery according to claim 5, it is characterised in that the substrate is flexible substrate.
8. overlapping thin film solar battery according to claim 7, it is characterised in that the substrate be metal foil substrate or
Polyimide substrate.
9. overlapping thin film solar battery according to claim 8, it is characterised in that described Window layer is by broad-band gap
The first window layer and the second Window layer of semi-conducting material composition, the first window layer are arranged on the top battery, and it is
Intrinsic metal conductive oxide layer, second Window layer are arranged on the first window layer, and it is the compound of n-type doping
Conductive layer.
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| CN113875025A (en) * | 2019-03-29 | 2021-12-31 | 新加坡国立大学 | Solar cell and method for manufacturing solar cell |
| CN110112248A (en) * | 2019-05-13 | 2019-08-09 | 中国科学院电工研究所 | Four end CIGS/CBTS binode stacked solar cell, cascade solar cells and preparation method thereof |
| CN112349801B (en) * | 2020-10-16 | 2023-12-01 | 泰州隆基乐叶光伏科技有限公司 | Intermediate series layer of laminated battery, production method thereof and laminated battery |
| CN115084302A (en) * | 2021-03-16 | 2022-09-20 | 北京理工大学 | Photoelectric device based on photoelectric recovery effect enhancement, preparation method and application |
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