CN105742363A - Radio-frequency switching device and forming method thereof - Google Patents
Radio-frequency switching device and forming method thereof Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7838—Field effect transistors with field effect produced by an insulated gate without inversion channel, e.g. buried channel lateral MISFETs, normally-on lateral MISFETs, depletion-mode lateral MISFETs
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41758—Source or drain electrodes for field effect devices for lateral devices with structured layout for source or drain region, i.e. the source or drain region having cellular, interdigitated or ring structure or being curved or angular
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
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Abstract
The invention provides a radio-frequency switching device and a forming method thereof. The radio-frequency switching device comprises a base, gate structures, source regions, drain regions, source metal layers, drain metal layers and a metal layer, wherein the gate structures are located on the base; the source regions and the drain regions are located in the base at two sides of the gate structures; each source metal layer is located on the base and is connected with the corresponding source region; each drain metal layer is located on the base and is connected with the corresponding drain region; the source metal layers and the drain metal layers are provided with dielectric layers; the metal layer is located on the dielectric layers; and the metal layer is at least projected to the top surfaces of partial source metal layers and partial drain metal layers. According to the radio-frequency switching device, the isolating properties of the drain metal layers and the source metal layers in an off state are strengthened.
Description
Technical field
The present invention relates to field of semiconductor manufacture, particularly relate to a kind of RF switching devices and forming method thereof.
Background technology
RF switching devices is a kind of important switching device, belongs to the switch of communication field signal, can be applicable to wire transmission radiofrequency signal.When RF switching devices works, subregion is in the conduction state, and subregion is off state.The figure of merit (FigureofMerit is called for short FOM) is the characteristic test parameter of performance or the technique evaluating RF switching devices.FOM=Ron*Coff, wherein, RonBe RF switching devices in the conduction state time equivalent resistance, CoffIt it is RF switching devices equivalent capacitance value when being off state.CoffIt is weigh RF switching devices parameter of isolation performance under OFF state；FOM is more low, represents that the combination property of RF switching devices is more good.
But, the performance of the RF switching devices formed in prior art has much room for improvement.
Summary of the invention
The problem that this invention address that is to provide a kind of RF switching devices and forming method thereof, to strengthen the isolation performance leaking between metal level and source metal level under OFF state.
For solving the problems referred to above, the present invention provides a kind of RF switching devices, including: substrate；Grid structure, is positioned in described substrate；Source region and drain region, lay respectively in the substrate of described grid structure both sides；Source metal level, is positioned in described substrate, and described source metal level is corresponding with described source region to be connected；Leakage metal level, be positioned in described substrate, described leakage metal level corresponding with described drain region connect, on the metal level of described source with described leakage metal level has dielectric layer；Metal level, on described dielectric layer, and described metal level at least projects to part source metal level and the top surface of part leakage metal level.
Optionally, described metal level projects to whole source metal level and the top surface of whole leakage metal level.
Optionally, described metal level projects to part source metal level and the top surface of part leakage metal level.
Optionally, the quantity of described grid structure is a plurality of；The quantity of described source metal level is a plurality of；The quantity of described leakage metal level is a plurality of.
Optionally, each bar grid structure, each bar source metal level and each bar leakage metal level are parallel to each other；Each bar source metal level and each bar leakage metal level are arranged alternately, and are placed with grid structure between source metal level and leakage metal level.
Optionally, on the bearing of trend along described grid structure, described metal level projects to part source metal level and the top surface of part leakage metal level；And along being perpendicular on the bearing of trend of described grid structure, described metal level projects to whole sources metal level and all leaks the top surface of metal level.
Optionally, also including: grid connector, described grid connector is connected with one end of each bar grid structure；Source connector, described source connector is connected with one end of each bar source metal level；Leakage connector, one end that described leakage connector leaks metal level with each bar is connected.
Optionally, described grid structure and described grid connector constitute finger gate electrode structure, the corresponding described grid structure of the grid comb of described finger gate electrode structure；Described source metal level and described source connector constitute comb shaped source metal level, the source comb corresponding described source metal level of described comb shaped source metal level；Described leakage metal level and described leakage connector constitute comb shaped drain metal level, the corresponding described leakage metal level of the leakage comb of described comb shaped drain metal level.
Optionally, the material of described metal level is aluminum, copper or albronze.
The present invention also provides for the forming method of a kind of RF switching devices, including: substrate is provided；Form grid structure on the substrate；The substrate of described grid structure both sides forms source region and drain region respectively；After forming source region and drain region, form source metal level, leakage metal level and dielectric layer on the substrate, described source metal level corresponding with described source region connect, described leakage metal level corresponding with described drain region connect, on the metal level of described source with described leakage metal level is formed with dielectric layer；Forming metal level on described dielectric layer, described metal level at least projects to part source metal level and the top surface of part leakage metal level.
Compared with prior art, technical scheme has the advantage that
Owing to being formed with metal level on described dielectric layer, described metal level at least projects to part source metal level and the top surface of part leakage metal level, make described metal level, dielectric layer and source metal level form the first electric capacity, described metal level, dielectric layer and leakage metal level form the second electric capacity, the signal of described source metal level end can pass through the first electric capacity and outwards discharge from metal level, the signal of described leakage metal level end can pass through the second electric capacity and outwards discharge from metal level, equivalent OFF state electric capacity between described source metal level and described leakage metal level is reduced, thus strengthening leakage metal level and described source metal level isolation performance under OFF state.
Further, when described metal level projects to the top surface of part source metal level and part leakage metal level, it is possible to the area projecting to source metal level and leakage metal level top surface by regulating metal level adjusts the first electric capacity and the size of the second electric capacity.Concrete, along with metal level projects to the area reduction of the top surface of source metal level and leakage metal level, the first electric capacity and the second electric capacity reduce therewith；Owing to the equivalent ON resistance between described source metal level and described leakage metal level reduces along with the reduction of the first electric capacity and the second electric capacity, making when the first electric capacity and the second electric capacity reduce, the equivalent ON resistance between described source metal level and described leakage metal level reduces；So that metal level termination in source is subject to the signal increase of leakage metal level end under ON state, consequently reduce the signal revealed to metal level under ON state from leakage metal level and source metal level, thus improve the performance of RF switching devices.
Further, on the bearing of trend along described grid structure, described metal level projects to part source metal level and the top surface of part leakage metal level, and along being perpendicular on the bearing of trend of described grid structure, described metal level projects to whole sources metal level and all leaks the top surface of metal level.Improve the concordance of each bar grid structure duty.
Accompanying drawing explanation
Fig. 1 is the schematic top plan view of RF switching devices in an embodiment；
Fig. 2 is along the profile obtained of line of cut A-A1 in Fig. 1；
Fig. 3, Fig. 4 and Fig. 5 are the schematic diagram of RF switching devices in first embodiment of the invention；
Fig. 6 and Fig. 7 is the schematic diagram of RF switching devices in second embodiment of the invention；
Fig. 8, Fig. 9 and Figure 10 are the schematic diagram of RF switching devices in third embodiment of the invention；
Figure 11 and Figure 12 is the schematic diagram of RF switching devices in fourth embodiment of the invention；
Figure 13 and Figure 14 is the schematic diagram of RF switching devices in fifth embodiment of the invention；
Figure 15 to Figure 19 is the structural representation of RF switching devices forming process in the present invention.
Detailed description of the invention
As described in background, the performance forming RF switching devices in prior art has much room for improvement.
Fig. 1 is the schematic top plan view of RF switching devices in an embodiment, and Fig. 2 is along the profile obtained of line of cut A-A1 in Fig. 1.
In conjunction with reference to Fig. 1 and Fig. 2, RF switching devices includes: substrate 101；Finger gate electrode structure G01, is positioned in substrate 101；Source-drain area 104, source-drain area 104 includes source region and drain region, and described source region and drain region lay respectively in the substrate 101 of the comb both sides of finger gate electrode structure G01；Connector 103, is positioned on source-drain area 104；Comb shaped source metal level S01 and comb shaped drain metal level D01, it is positioned in described substrate 101, the comb of comb shaped source metal level S01, the comb of comb shaped drain metal level D01 and the comb of finger gate electrode structure G01 are parallel to each other, each comb of comb shaped source metal level S01 and each comb of comb shaped drain metal level D01 are arranged alternately, and are finger gate electrode structure G01 between comb and the comb of comb shaped drain metal level D01 of comb shaped source metal level S01；Comb shaped source metal level S01 is connected with described source region by connector 103, and comb shaped drain metal level D01 is connected with described drain region by connector 103；Dielectric layer (not shown), covers substrate 101, finger gate electrode structure G01, connector 103, comb shaped source metal level S01 and comb shaped drain metal level D01.
Wherein, it is illustrated by the broken lines out device region 10, the substrate 101 of described device region 10 includes source region and the isolation structure of isolation adjacent active regions.
Research finds, the equivalent OFF state electric capacity between comb shaped source metal level S01 and comb shaped drain metal level D01 is to weigh RF switching devices important parameter of isolation performance between comb shaped source metal level S01 and comb shaped drain metal level D01 under OFF state.Concrete, the equivalent OFF state electric capacity between comb shaped source metal level S01 and comb shaped drain metal level D01 is more little, and under OFF state, between comb shaped source metal level S01 and comb shaped drain metal level D01, isolation performance is more good；Equivalent OFF state electric capacity between comb shaped source metal level S01 and comb shaped drain metal level D01 is more big, and under OFF state, between comb shaped source metal level S01 and comb shaped drain metal level D01, isolation performance is more poor.
Further investigation revealed that, if forming metal level on dielectric layer, make, between comb shaped source metal level S01 and metal level, there is the first electric capacity, between comb shaped drain metal level D01 and metal level, there is the second electric capacity, the signal of described comb shaped source metal level S01 end can pass through the first electric capacity from metal level to outward leakage, the signal of described comb shaped drain metal level D01 can pass through the second electric capacity from metal level to outward leakage, the equivalent OFF state electric capacity between described comb shaped source metal level S01 and comb shaped drain metal level D01 can be reduced, thus the isolation performance strengthened under OFF state between comb shaped source metal level S01 and comb shaped drain metal level D01.
On this basis, the present invention provides a kind of RF switching devices, including: substrate；Grid structure, is positioned in described substrate；Source region and drain region, lay respectively in the substrate of described grid structure both sides；Source metal level, is positioned in described substrate, and described source metal level is corresponding with described source region to be connected；Leakage metal level, be positioned in described substrate, described leakage metal level corresponding with described drain region connect, on the metal level of described source with described leakage metal level has dielectric layer；Metal level, on described dielectric layer, and described metal level at least projects to part source metal level and the top surface of part leakage metal level.Described RF switching devices can strengthen leakage metal level and described source metal level isolation performance under OFF state.
Understandable for enabling the above-mentioned purpose of the present invention, feature and advantage to become apparent from, below in conjunction with accompanying drawing, specific embodiments of the invention are described in detail.
First embodiment
Fig. 3, Fig. 4 and Fig. 5 are the schematic diagram of RF switching devices in first embodiment of the invention, and wherein, Fig. 3 is the top view of RF switching devices in first embodiment of the invention, and Fig. 4 is along the profile obtained of line of cut A1-A2 in Fig. 3.
In conjunction with reference to Fig. 3 and Fig. 4, RF switching devices includes: substrate 200；Grid structure G021, is positioned in described substrate 200；Source region and drain region, lay respectively in the substrate of described grid structure G021 both sides；Source metal level S021, is positioned in described substrate 200, and described source metal level S021 is corresponding with described source region to be connected；Leakage metal level D021, be positioned in described substrate 200, described leakage metal level D021 corresponding with described drain region connect, on described source metal level S021 with described leakage metal level D021 has dielectric layer (not shown)；Metal level 230, on described dielectric layer, described metal level 230 projects to whole source metal level S021 and the top surface of whole leakage metal level D021.
It is illustrated by the broken lines out device region 20, the substrate 200 of described device region 20 includes source region and the isolation structure of isolation adjacent active regions.
Described substrate 200 can be Semiconductor substrate, and described Semiconductor substrate can be monocrystal silicon, polysilicon or non-crystalline silicon；Described Semiconductor substrate can also be the semi-conducting materials such as silicon, germanium, SiGe, GaAs；Described Semiconductor substrate can also is that other semi-conducting material, no longer illustrates one by one here.
Described substrate 200 can also be silicon-on-insulator, described silicon-on-insulator includes bottom substrate, be positioned at the buried layer on described bottom substrate surface and be positioned at the roof liner on described buried layer surface at the bottom of.The formation of described silicon-on-insulator may is that offer body semiconductor layer；Forming buried layer in described body semiconductor layer, the semiconductor layer below described buried layer forms bottom substrate, and the semiconductor layer above described buried layer is formed at the bottom of roof liner.
Described grid structure G021 is strip；Described source metal level S021 is strip；Described leakage metal level D021 is strip.
The quantity of described grid structure G021 is one or more.When the quantity of described grid structure G021 is one, the quantity of described source metal level S021 is one, and the quantity of described leakage metal level D021 is one；When the quantity of described grid structure G021 is a plurality of, the quantity of described source metal level S021 is a plurality of, and the quantity of described leakage metal level D021 is a plurality of.In the present embodiment, the quantity of described grid structure G021 is a plurality of, and the quantity of described source metal level S021 is a plurality of, and the quantity of described leakage metal level D021 is a plurality of.
Described grid structure G021 includes the gate dielectric layer (not shown) being positioned in substrate 200 and the gate electrode (not shown) being positioned on described gate dielectric layer.The material of described gate dielectric layer is silicon oxide, and the material of described gate electrode is polysilicon.
Described source region is arranged in the substrate of described grid structure G021 side, and described drain region is arranged in the substrate of described grid structure G021 opposite side；Described source region and described drain region constitute source-drain area 210；In the present embodiment, the structure leaked with described source-drain area 210 for common source is exemplarily.
In the present embodiment, described RF switching devices also includes: grid connector G022, one end of described grid connector G022 and each bar grid structure G021 is connected, described grid connector G022 is suitable to be connected in parallel each bar grid structure G021, concrete, grid connector G022 is connected with one end of each fence electrode, and is connected in parallel by each fence electrode；One end of source connector S022, described source connector S022 and each bar source metal level S021 is connected, and described source connector S022 is suitable to be connected in parallel each bar source metal level S021；One end that leakage connector D022, described leakage connector D022 leak metal level D021 with each bar is connected, and described leakage connector D022 is suitable to that each bar is leaked metal level D021 and is connected in parallel.It can be avoided that when radio-frequency devices works, it is necessary on each bar grid structure G021, apply voltage respectively, each bar source metal level S021 applies voltage respectively, on each bar leakage metal level D021, applies voltage respectively.
The material of described grid connector G022 is polysilicon；The material of described leakage connector D022 is metal, such as aluminum, copper or albronze；The material of described source connector S022 is metal, such as aluminum, copper or albronze.
In the present embodiment, each bar grid structure G021, each bar source metal level S021 and each bar leakage metal level D021 are parallel to each other；In other embodiments, it is possible to according to side circuit need design each bar grid structure, each bar source metal level and each bar leakage metal level position relationship.
When each bar grid structure G021, each bar source metal level S021 and each bar leakage metal level D021 is parallel to each other, each bar source metal level S021 and each bar leakage metal level D021 is arranged alternately, and is placed with grid structure G021 between source metal level S021 and leakage metal level D021.
In the present embodiment, described source metal level S021 and leakage metal level D021 is in the upper strata of grid structure G021, source metal level S021 and grid structure G021 is made to be in different layers, leakage metal level D021 and grid structure G021 is in different layers, reduces the parasitic capacitance between source metal level S021 and grid structure G021 and the parasitic capacitance between leakage metal level D021 and grid structure G021.
Described source metal level S021 and leakage metal level D021 may be at same layer, enabling concurrently forms source metal level S021 and leakage metal level D021 in a processing step, simplifies technique.In other embodiments, described source metal level and described leakage metal level are positioned at different layers, it is possible to make the long-pending reduction of the right opposite between source metal level and leakage metal level, thus the parasitic capacitance reduced between source metal level and leakage metal level.
When described source metal level and described leakage metal level are positioned at different layers, in one embodiment, described source metal level is positioned on described leakage metal level；In another embodiment, described leakage metal level is positioned on the metal level of described source.
In the present embodiment, described grid structure G021 and described grid connector G022 constitutes finger gate electrode structure G02, described finger gate electrode structure G02 has grid comb and is positioned at described grid comb side the grid comb handle being connected with each grid comb, the bearing of trend extending perpendicularly to described grid comb of described grid comb handle, described grid comb corresponds to described grid structure G021, and described grid comb handle corresponds to grid connector G022；Described source metal level S021 and described source connector S022 constitutes comb shaped source metal level S02, described comb shaped source metal level S02 has source comb and is positioned at comb side, described source the source comb handle being connected with each source comb, the bearing of trend extending perpendicularly to described source comb of described source comb handle, described source comb corresponds to source metal level S021, and described source comb handle corresponds to source connector S022；Described leakage metal level D021 and described leakage connector D022 constitutes comb shaped drain metal level D02, described comb shaped drain metal level D02 has leakage comb and is positioned at described leakage comb side the leakage comb handle being connected with each leakage comb, the bearing of trend extending perpendicularly to described leakage comb of described leakage comb handle, described leakage comb corresponds to Lou metal level D021, and described leakage comb handle corresponds to Lou connector D022.
The source comb of described comb shaped source metal level S02, the leakage comb of comb shaped drain metal level D02 and the grid comb of finger gate electrode structure G02 are parallel to each other, the leakage comb of the source comb of each comb shaped source metal level S02 and each comb shaped drain metal level D02 is arranged alternately, and is placed with the grid comb of finger gate electrode structure G02 between source comb and the leakage comb of comb shaped drain metal level D02 of comb shaped source metal level S02.
Described source metal level S021 is corresponding with described source region to be connected, and described leakage metal level D021 is corresponding with described drain region to be connected.Concrete, in the present embodiment, the source comb of described comb shaped source metal level S02 is corresponding with described source region to be connected, and the leakage comb of described comb shaped drain metal level D02 is corresponding with described drain region to be connected.
In the present embodiment, described RF switching devices also includes: connector 220, between described source region and described source metal level S021 and between described drain region and described leakage metal level D021；Described source metal level S021 is connected with described source region by the connector 220 on source region, and described leakage metal level D021 is connected with described drain region by the connector 220 on drain region.The material of described connector 220 is metal, such as tungsten, copper, aluminum or albronze.
Described RF switching devices also includes: interlayer dielectric layer (not shown), and described interlayer dielectric layer covers described substrate 200 and grid structure G02.
In the present embodiment, described interlayer dielectric layer covers substrate 200, finger gate electrode structure G02, source region and drain region, and described connector 220 runs through described interlayer dielectric layer.
The material of described interlayer dielectric layer is silicon oxide, silicon oxynitride or silicon oxide carbide.
On described source metal level S021 and described leakage metal level D021 has dielectric layer (not shown).
In the present embodiment, described dielectric layer covers source metal level S021, leakage metal level D021, interlayer dielectric layer and connector 220.
The relative dielectric constant of described dielectric layer can be 3.9～7.
Described dielectric layer can be single layer structure or laminated construction.When described dielectric layer is single layer structure, the material of described dielectric layer can be silicon oxide；When described dielectric layer is laminated construction, described dielectric layer includes first medium layer and the second dielectric layer being positioned on first medium layer, and described first medium layer can be silicon nitride, and described second dielectric layer can be silicon oxide.
In the present embodiment, described metal level 230 is positioned on described dielectric layer, and described metal level 230 projects to whole source metal level S021 and the top surface of whole leakage metal level D021.
The projecting direction of the top surface that described metal level 230 projects to source metal level S021 and leakage metal level D021 refers to: project along the direction being perpendicular to substrate 200 surface.
The material of described metal level 230 is aluminum, copper or albronze.
In the present embodiment, described metal level 230 is block structure (with reference to Fig. 5).
Second embodiment
Second embodiment and first embodiment are distinctive in that: metal level projects to part source metal level and the top surface of part leakage metal level.In the present embodiment, list a kind of situation that metal level projects to the top surface of part source metal level and part leakage metal level.About the part that the second embodiment is identical with first embodiment, no longer describe in detail.
Fig. 6 and Fig. 7 is the schematic diagram of RF switching devices in second embodiment of the invention, and wherein, Fig. 6 is the top view of RF switching devices in second embodiment of the invention, and Fig. 7 is along the profile obtained of line of cut A2-A3 in Fig. 6.
In conjunction with reference to Fig. 6 and Fig. 7, RF switching devices includes: substrate 300；Grid structure G031, is positioned in described substrate 300；Source region and drain region, lay respectively in the substrate 300 of described grid structure G031 both sides；Source metal level S031, is positioned in described substrate 300, and described source metal level S031 is corresponding with described source region to be connected；Leakage metal level D031, be positioned in described substrate 300, described leakage metal level D031 corresponding with described drain region connect, on described source metal level S031 with described leakage metal level D031 has dielectric layer；Metal level 330, on described dielectric layer, described metal level 330 projects to part source metal level S031 and the top surface of part leakage metal level D031.
It should be noted that the projecting direction of top surface that described metal level 330 projects to source metal level S031 and leakage metal level D031 refers to: project along the direction being perpendicular to substrate 300 surface.
It is illustrated by the broken lines out device region 30, the substrate 300 of described device region 30 includes source region and the isolation structure of isolation adjacent active regions.
Described source region and described drain region constitute source-drain area 310；In the present embodiment, the structure leaked with described source-drain area 310 for common source is exemplarily.
Described grid structure G031 includes the gate dielectric layer (not shown) being positioned in substrate 300 and the gate electrode (not shown) being positioned on described gate dielectric layer.The material of described gate dielectric layer is silicon oxide, and the material of described gate electrode is polysilicon.
In the present embodiment, described RF switching devices also includes: grid connector G032, one end of described grid connector G032 and each bar grid structure G031 is connected, described grid connector G032 is suitable to be connected in parallel each bar grid structure G031, concrete, grid connector G032 is connected with one end of each fence electrode, and is connected in parallel by each fence electrode；One end of source connector S032, described source connector S032 and each bar source metal level S031 is connected, and described source connector S032 is suitable to be connected in parallel each bar source metal level S031；One end that leakage connector D032, described leakage connector D032 leak metal level D031 with each bar is connected, and described leakage connector D032 is suitable to that each bar is leaked metal level D031 and is connected in parallel.It can be avoided that when radio-frequency devices works, it is necessary on each bar grid structure G031, apply voltage respectively, each bar source metal level S031 applies voltage respectively, on each bar leakage metal level D031, applies voltage respectively.
In the present embodiment, each bar grid structure G031, each bar source metal level S031 and each bar leakage metal level D031 are parallel to each other；In other embodiments, it is possible to according to side circuit need design each bar grid structure, each bar source metal level and each bar leakage metal level position relationship.
When each bar grid structure G031, each bar source metal level S031 and each bar leakage metal level D031 is parallel to each other, each bar source metal level S031 and each bar leakage metal level D031 is arranged alternately, and is placed with grid structure G031 between source metal level S031 and leakage metal level D031.
In the present embodiment, described grid structure G031 and described grid connector G032 constitutes finger gate electrode structure G03, described finger gate electrode structure G03 has grid comb and is positioned at described grid comb side the grid comb handle being connected with each grid comb, the bearing of trend extending perpendicularly to described grid comb of described grid comb handle, described grid comb corresponds to described grid structure G031, and described grid comb handle corresponds to grid connector G032；Described source metal level S031 and described source connector S032 constitutes comb shaped source metal level S03, described comb shaped source metal level S03 has source comb and is positioned at comb side, described source the source comb handle being connected with each source comb, the bearing of trend extending perpendicularly to described source comb of described source comb handle, described source comb corresponds to source metal level S031, and described source comb handle corresponds to source connector S032；Described leakage metal level D031 and described leakage connector D032 constitutes comb shaped drain metal level D03, described comb shaped drain metal level D03 has leakage comb and is positioned at described leakage comb side the leakage comb handle being connected with each leakage comb, the bearing of trend extending perpendicularly to described leakage comb of described leakage comb handle, described leakage comb corresponds to Lou metal level D031, and described leakage comb handle corresponds to Lou connector D032.
The source comb of described comb shaped source metal level S03, the leakage comb of comb shaped drain metal level D03 and the grid comb of finger gate electrode structure G03 are parallel to each other, the leakage comb of the source comb of each comb shaped source metal level S03 and each comb shaped drain metal level D03 is arranged alternately, and is placed with the grid comb of finger gate electrode structure G03 between source comb and the leakage comb of comb shaped drain metal level D03 of comb shaped source metal level S03.
Described RF switching devices also includes: interlayer dielectric layer, covers described substrate 300 and grid structure G031；Connector 320, run through described interlayer dielectric layer, between described source region and described source metal level S031 and between drain region and leakage metal level D031, described source metal level S031 is connected with described source region by the connector 320 on source region, and described leakage metal level D031 is connected with described drain region by the connector 320 on drain region.
When there is grid connector G022, described interlayer dielectric layer covers grid connector G022.
The material of described interlayer dielectric layer and connector 320 selects with reference to first embodiment.
When each bar grid structure G031, each bar source metal level S031 and each bar leakage metal level D031 is parallel to each other, with reference to Fig. 6, on the bearing of trend along described grid structure G031, described metal level 330 projects to part source metal level S031 and the top surface of part leakage metal level D031；And along being perpendicular on the bearing of trend of described grid structure G031, described metal level 330 projects to whole source metal level S031 and all leaks the top surface of metal level D031.
The bearing of trend of described grid structure G031 refers to the direction being parallel in Fig. 6 x-axis.
In the present embodiment, described metal level 330 is block structure.
3rd embodiment
3rd embodiment and the second embodiment are distinctive in that: metal level is pectinate texture.About the part that the 3rd embodiment is identical with the second embodiment, no longer describe in detail.
Fig. 8, Fig. 9 and Figure 10 are the schematic diagram of RF switching devices in third embodiment of the invention, and wherein, Fig. 8, Figure 10 are the top view of RF switching devices in the 3rd embodiment, and Fig. 9 is the schematic perspective view that in Fig. 8, metal level is corresponding.
When described metal level is pectinate texture, described metal level includes the comb of metal level and the comb handle of metal level, the comb of described metal level is positioned at the side of the comb handle of described metal level, the bearing of trend of the comb extending perpendicularly to described metal level of the comb handle of described metal level.
With reference to Fig. 8, metal level 331 projects to part source metal level S031 and the top surface of part leakage metal level D031.When each bar grid structure G031, each bar source metal level S031 and each bar leakage metal level D031 is parallel to each other, on the bearing of trend along described grid structure G031, described metal level 331 projects to part source metal level S031 and the top surface of part leakage metal level D031；And along being perpendicular on the bearing of trend of described grid structure G031, described metal level 331 projects to whole source metal level S031 and all leaks the top surface of metal level D031.
The projecting direction of the top surface that described metal level 331 projects to source metal level S031 and leakage metal level D031 refers to: project along the direction being perpendicular to substrate 300 surface.
Fig. 9 is the schematic perspective view of metal level 331 in Fig. 8, clearly illustrates that metal level 331 is for pectinate texture.
With reference to Figure 10, metal level 332 projects to part source metal level S031 and the top surface of part leakage metal level D031.When each bar grid structure G031, each bar source metal level S031 and each bar leakage metal level D031 is parallel to each other, on the bearing of trend along described grid structure G031, described metal level 332 projects to part source metal level S031 and the top surface of part leakage metal level D031；And along being perpendicular on the bearing of trend of described grid structure G031, described metal level 332 projects to whole source metal level S031 and all leaks the top surface of metal level D031.
The projecting direction of the top surface that described metal level 332 projects to source metal level S031 and leakage metal level D031 refers to: project along the direction being perpendicular to substrate 300 surface.
It should be noted that, when each bar grid structure G031, each bar source metal level S031 and each bar leakage metal level D031 is parallel to each other, and the metal level related in the present embodiment projects under the part source metal level S031 concrete condition of top surface leaking metal level D031 with part, the bearing of trend extending perpendicularly to described grid structure G031 of the comb of described metal level.
4th embodiment
4th embodiment and the second embodiment are distinctive in that: list metal level and project to part source metal level and the top surface another kind situation of part leakage metal level.About the part that the 4th embodiment is identical with the second embodiment, no longer describe in detail.
Figure 11 and Figure 12 is the schematic diagram of RF switching devices in fourth embodiment of the invention, and wherein, Figure 11 is the top view of RF switching devices in fourth embodiment of the invention, and Figure 12 is along the profile obtained of line of cut A3-A4 in Figure 11.
In conjunction with reference to Figure 11 and Figure 12, RF switching devices includes: substrate 300；Grid structure G031, is positioned in described substrate 300；Source region and drain region, lay respectively in the substrate 300 of described grid structure G031 both sides；Source metal level S031, is positioned in described substrate 300, and described source metal level S031 is corresponding with described source region to be connected；Leakage metal level D031, be positioned in described substrate 300, described leakage metal level D031 corresponding with described drain region connect, on described source metal level S031 with described leakage metal level D031 has dielectric layer；Metal level 430, on described dielectric layer, described metal level 430 projects to part source metal level S031 and the top surface of part leakage metal level D031.
Described source region and described drain region constitute source-drain area 310.
In the present embodiment, described RF switching devices also includes: grid connector G032, source connector S032 and leakage connector D032.About grid connector G032, source connector S032, leakage connector D032 particular location with reference to the explanation of the second embodiment, no longer describe in detail.
In the present embodiment, described RF switching devices also includes: interlayer dielectric layer and connector 320, about reference by location second embodiment of the position of interlayer dielectric layer and connector 320, no longer describes in detail.
When each bar grid structure G031, each bar source metal level S031 and each bar leakage metal level D031 is parallel to each other, with reference to Figure 11, on the bearing of trend along described grid structure G031, described metal level 430 projects to whole source metal level S031 and all leaks the top surface of metal level D031；And along being perpendicular on the bearing of trend of described grid structure G031, described metal level 430 projects to part source metal level S031 and the top surface of part leakage metal level D031.
The projecting direction of the top surface that described metal level 430 projects to source metal level S031 and leakage metal level D031 refers to: project along the direction being perpendicular to substrate 300 surface.
In Figure 11, described metal level 430 is block structure.In other embodiments, described metal level can also be pectinate texture.
It should be noted that, when each bar grid structure G031, each bar source metal level S031 and each bar leakage metal level D031 is parallel to each other, and the metal level related in the present embodiment project to part source metal level and part leak metal level top surface when, when described metal level is pectinate texture, the bearing of trend of the comb of described metal level is parallel to the bearing of trend of described grid structure.
5th embodiment
5th embodiment and the second embodiment are distinctive in that: list metal level and project to part source metal level and another situation of part leakage metal level.About the part that the 5th embodiment is identical with the second embodiment, no longer describe in detail.
Figure 13 and Figure 14 is the schematic diagram of RF switching devices in fifth embodiment of the invention, and wherein, Figure 13 is the top view of RF switching devices in fifth embodiment of the invention, and Figure 14 is along the profile obtained of line of cut A4-A5 in Figure 13.
In conjunction with reference to Figure 13 and Figure 14, RF switching devices includes: substrate 300；Grid structure G031, is positioned in described substrate 300；Source region and drain region, lay respectively in the substrate of described grid structure G031 both sides；Source metal level S031, is positioned in described substrate 300, and described source metal level S031 is corresponding with described source region to be connected；Leakage metal level D031, be positioned in described substrate 300, described leakage metal level D031 corresponding with described drain region connect, on described source metal level S031 with described leakage metal level D031 has dielectric layer；Metal level 530, on described dielectric layer, described metal level 530 projects to part source metal level S031 and the top surface of part leakage metal level D031.
The projecting direction of the top surface that described metal level 530 projects to source metal level S031 and leakage metal level D031 refers to: project along the direction being perpendicular to substrate 300 surface.
Described source region and described drain region constitute source-drain area 310.
In the present embodiment, described RF switching devices also includes: grid connector G032, source connector S032 and leakage connector D032.About grid connector G032, source connector S032, leakage connector D032 particular location with reference to the explanation of the second embodiment, no longer describe in detail.
In the present embodiment, described RF switching devices also includes interlayer dielectric layer and connector 320, about reference by location second embodiment of the position of interlayer dielectric layer and connector 320, no longer describes in detail.
When each bar grid structure G031, each bar source metal level S031 and each bar leakage metal level D031 is parallel to each other, with reference to Figure 13, on the bearing of trend along described grid structure G031, described metal level 530 projects to part source metal level S031 and the top surface of part leakage metal level D031；And along being perpendicular on the bearing of trend of described grid structure G031, described metal level 530 projects to part source metal level S031 and the top surface of part leakage metal level D031.
In Figure 13, described metal level 530 is block structure.Described metal level can also be pectinate texture.
It should be noted that, when each bar grid structure G031, each bar source metal level S031 and each bar leakage metal level D031 is parallel to each other, and the metal level related in the present embodiment project to part source metal level and part leak metal level top surface when, when described metal level is pectinate texture, the bearing of trend of the comb of described metal level can be parallel to the bearing of trend of described grid structure, it is also possible to is perpendicular to the bearing of trend of described grid structure.
In first embodiment, second embodiment, 3rd embodiment, in 4th embodiment and the 5th embodiment, owing to defining metal level on described dielectric layer, described metal level at least projects to part source metal level and the top surface of part leakage metal level, make described metal level, dielectric layer and source metal level form the first electric capacity, described metal level, dielectric layer and leakage metal level form the second electric capacity, when RF switching devices works, described metal level ground connection or connecting to neutral potential, the signal of described source metal level end can pass through the first electric capacity and outwards discharge from metal level, the signal of described leakage metal level end can pass through the second electric capacity and outwards discharge from metal level, equivalent OFF state electric capacity between described source metal level and described leakage metal level is reduced, thus strengthening under OFF state the isolation performance leaking metal level and source metal level.
Further, in the second embodiment, the 3rd embodiment, the 4th embodiment and the 5th embodiment, metal level projects to part source metal level and the top surface of part leakage metal level, the area that can project to source metal level and leakage metal level top surface by regulating metal level adjusts the first electric capacity and the size of the second electric capacity, concrete, along with metal level projects to the area reduction of source metal level and leakage metal level top surface, the first electric capacity and the second electric capacity reduce therewith.Owing to the equivalent ON resistance between described source metal level and described leakage metal level reduces along with the reduction of the first electric capacity and the second electric capacity so that the equivalent ON resistance between described source metal level and described leakage metal level reduces；So that metal level termination in source is subject to the signal increase of leakage metal level end under ON state, consequently reduce the signal revealed to metal level under ON state from leakage metal level and source metal level, thus improve the performance of RF switching devices.
Further, in the second embodiment and the 3rd embodiment, on the bearing of trend along described grid structure, described metal level projects to part source metal level and the top surface of part leakage metal level；And along being perpendicular on the bearing of trend of described grid structure, described metal level projects to whole sources metal level and all leaks the top surface of metal level.Benefit is: avoid on the bearing of trend being perpendicular to grid structure, and only the source metal level of part of grid pole structure both sides and leakage metal level form electric capacity with metal level, improve the concordance of each bar grid structure duty.
It should be noted that be, it is also possible to by selecting the dielectric layer of the numerical value of different relative dielectric constant, changing the first electric capacity and the size of the second electric capacity, the relative dielectric constant of dielectric layer is more little, the first corresponding electric capacity and and the size of the second electric capacity more little；Equivalent ON resistance between described source metal level and described leakage metal level reduces along with the reduction of the first electric capacity and the second electric capacity, thus the purpose of the equivalent ON resistance size reached between change source metal level and described leakage metal level.Concrete, when the relative dielectric constant of dielectric layer reduces, the first corresponding electric capacity and the second electric capacity reduce so that the equivalent ON resistance between source metal level and described leakage metal level reduces；So that metal level termination in source is subject to the signal increase of leakage metal level end under ON state, consequently reduce the signal revealed to metal level under ON state from leakage metal level and source metal level, thus improve the performance of RF switching devices.
It should be noted that the size of the first electric capacity can also be changed to the distance between the metal level of source by regulating metal level, change the size of the second electric capacity to the distance between leakage metal level by regulating metal level.Concrete, the first electric capacity reduces along with the increase of the distance between metal level to source metal level, and the second electric capacity reduces along with the increase of the distance between metal level to leakage metal level.
The present invention also provides for the forming method of a kind of RF switching devices, including: substrate is provided；Form grid structure on the substrate；The substrate of described grid structure both sides forms source region and drain region respectively；After forming source region and drain region, form source metal level, leakage metal level and dielectric layer on the substrate, described source metal level corresponding with described source region connect, described leakage metal level corresponding with described drain region connect, on the metal level of described source with described leakage metal level is formed with dielectric layer；Forming metal level on described dielectric layer, described metal level at least projects to part source metal level and the top surface of part leakage metal level.
Figure 15 to Figure 19 is the structural representation of RF switching devices forming process in the present invention.
In conjunction with reference to Figure 15 and Figure 16, wherein, Figure 15 is the top view of RF switching devices, and Figure 16 is along the profile obtained of line of cut A5-A6 in Figure 15, it is provided that substrate 600.
It is illustrated by the broken lines out device region 60, the substrate 600 of described device region 60 includes source region and the isolation structure of isolation adjacent active regions.
The material of described substrate 600 selects to select with reference to the material of substrate 200 in first embodiment, no longer describes in detail.
Continuing with reference Figure 15 and Figure 16, described substrate 600 forms grid structure G061；The substrate 600 of described grid structure G061 both sides forms source region and drain region respectively.
It should be noted that source region and drain region are not illustrated in fig .15.
Described grid structure G061 includes the gate dielectric layer (not shown) being positioned in substrate 600 and the gate electrode (not shown) being positioned on described gate dielectric layer.The material of described gate dielectric layer is silicon oxide, and the material of described gate electrode is polysilicon.
The step forming described grid structure G061 is: form gate dielectric material layer and the gate material layers being positioned on described gate dielectric material layer in described substrate 600；Graphical described gate dielectric material layer and gate material layers, form gate dielectric layer and the gate electrode being positioned on described gate dielectric layer, described gate dielectric layer and described gate electrode constitute grid structure G061.
Described grid structure G061 is strip.The quantity of described grid structure G061 is one or more.In the present embodiment, the quantity of described grid structure G061 is a plurality of.
In the present embodiment, each bar grid structure G061 is parallel to each other；In other embodiments, it is possible to need to design the position relationship of each bar grid structure according to side circuit.
In the present embodiment, it is also formed with grid connector G062, one end of described grid connector G062 and each bar grid structure G061 is connected, described grid connector G062 is suitable to be connected in parallel each bar grid structure G061, concrete, grid connector G062 is connected with one end of each fence electrode, and is connected in parallel by each fence electrode.It can be avoided that need when RF switching devices works to apply voltage respectively on each bar grid structure G061.
The material of described grid connector G062 is polysilicon.
Formed grid structure G061 concurrently form grid connector G062, it is possible to Simplified flowsheet；In other embodiments, it is possible to form described grid structure G061 and described grid connector G062 respectively.
In the present embodiment, described grid structure G061 and described grid connector G062 constitutes finger gate electrode structure G06, described finger gate electrode structure G06 has grid comb and is positioned at described grid comb side the grid comb handle being connected with each grid comb, the bearing of trend extending perpendicularly to described grid comb of described grid comb handle, described grid comb corresponds to described grid structure G061, and described grid comb handle corresponds to grid connector G062.
The technique forming source region and drain region in the substrate 600 of described grid structure G061 both sides respectively is: with described grid structure G061 for mask, the substrate of described grid structure G061 both sides is carried out ion implanting, thus forming source region in the substrate 600 of described grid structure G061 side, the substrate 600 of described grid structure G061 opposite side is formed drain region, described source region and drain region and forms source-drain area 610.
In the present embodiment, the structure that described source-drain area 610 leaks for common source is exemplarily.
In conjunction with reference to Figure 17 and Figure 18, wherein, Figure 17 is the schematic diagram formed on Figure 15 basis, Figure 18 is the schematic diagram formed on Figure 16 basis, after forming source region and drain region, forming source metal level S061, leakage metal level D061 and dielectric layer (not shown) in described substrate 600, described source metal level S061 is corresponding with described source region to be connected, described leakage metal level D061 corresponding with described drain region connect, described source metal level S061 on described leakage metal level D061 is formed with dielectric layer.
The material of described source metal level S061 is metal, such as aluminum, copper or albronze；The material metal of described leakage metal level D061, such as aluminum, copper or albronze.
The position relationship of each bar grid structure G061, each bar source metal level S061 and each bar leakage metal level D061, with reference to the position relationship of each bar grid structure G021, each bar source metal level S021 in first embodiment and each bar leakage metal level D021, no longer describes in detail.
Concrete, after forming source region and drain region, form the interlayer dielectric layer (not shown) covering described substrate 600 and grid structure G061.
If there is grid connector G062, described interlayer dielectric layer also covers grid connector G062.
The material of described interlayer dielectric layer is silicon oxide, silicon oxynitride or silicon oxide carbide.The technique forming described interlayer dielectric layer is depositing operation, such as plasma activated chemical vapour deposition technique, sub-atmospheric pressure chemical vapor deposition method or low-pressure chemical vapor deposition process.
Then, the connector 620 running through described interlayer dielectric layer is formed, concrete, it is initially formed the through hole (not shown) running through described interlayer dielectric layer, described through hole exposes area surface and surface, drain region；Then electroplating technology or physical gas-phase deposition is adopted to form connector 620 in described through hole.
It should be noted that in actual process, described through hole can also expose the top surface of grid structure G061, after forming connector 620, the top surface of described grid structure G061 also has connector 620.
Then, source metal level S061, leakage metal level D061 and dielectric layer are formed.
In the present embodiment, source metal level S061 and leakage metal level D061 is in same layer, and the concrete step forming source metal level S061, leakage metal level D061 and dielectric layer is: form the source and drain metal material layer covering described interlayer dielectric layer and connector 620；Graphical described source and drain metal material layer, formation source metal level S061 and leakage metal level D061, described source metal level S061 covers the top surface of connector 620 on source region, described leakage metal level D061 covers the top surface of connector 620 on drain region, so that source metal level S061 is connected with described source region by the connector 620 on source region, described leakage metal level D061 is connected with described drain region by the connector 620 on drain region；Adopt depositing operation, such as plasma activated chemical vapour deposition technique, sub-atmospheric pressure chemical vapor deposition method or low-pressure chemical vapor deposition process, the dielectric layer of formation covering source metal level S061, leakage metal level D061, interlayer dielectric layer and connector 620.
The relative dielectric constant of described dielectric layer and the selection of material, with reference to first embodiment, are no longer described in detail.
When described source metal level and leakage metal level are in different layers, described leakage metal level is positioned at the upper strata of described source metal level, or described source metal level is positioned at the upper strata of described leakage metal level.
When described leakage metal level is positioned at the upper strata of source metal level, the step forming described source metal level, leakage metal level and dielectric layer is: form source metal level；Form the underlying dielectric layer of covering source metal level, interlayer dielectric layer and connector；Underlying dielectric layer is formed leakage metal level；Form the top layer dielectric layer covering leakage metal level and underlying dielectric layer, described top layer dielectric layer and underlying dielectric layer and form dielectric layer.
When described source metal level is positioned at the upper strata of leakage metal level, the step forming described source metal level, leakage metal level and dielectric layer is: form leakage metal level；Form the underlying dielectric layer covering leakage metal level, interlayer dielectric layer and connector 620；Underlying dielectric layer is formed source metal level；Form the top layer dielectric layer of covering source metal level and underlying dielectric layer, described top layer dielectric layer and underlying dielectric layer and form dielectric layer.
The technique forming described top layer dielectric layer and underlying dielectric layer is depositing operation, such as plasma activated chemical vapour deposition technique, sub-atmospheric pressure chemical vapor deposition method or low-pressure chemical vapor deposition process.
Described source metal level S061 is strip；Described leakage metal level D061 is strip.
When the quantity of described grid structure G061 is one, the quantity of described source metal level S061 is one, and the quantity of described leakage metal level D061 is one；When the quantity of described grid structure G061 is a plurality of, the quantity of described source metal level S061 is a plurality of, and the quantity of described leakage metal level D061 is a plurality of.In the present embodiment, with the quantity of described grid structure G061 be source metal level S061 a plurality of, described the quantity that quantity is leakage metal level D061 a plurality of, described be a plurality of exemplarily.
In the present embodiment, described RF switching devices also includes: source connector S062, and one end of described source connector S062 and each bar source metal level S061 is connected, and described source connector S062 is suitable to be connected in parallel each bar source metal level S061；One end that leakage connector D062, described leakage connector D062 leak metal level D061 with each bar is connected, and described leakage connector D062 is suitable to that each bar is leaked metal level D061 and is connected in parallel.It can be avoided that when radio-frequency devices works, each bar source metal level S061 applies voltage respectively, applies voltage respectively on each bar leakage metal level D061.
The material of described leakage connector D062 is metal, such as aluminum, copper or albronze；The material of described source connector S062 is metal, such as aluminum, copper or albronze.
In the present embodiment, formed source metal level S061 the source that concurrently forms connector S062, formed leakage metal level D061 concurrently form Lou connector D062, simplify technique.In other embodiments, described source metal level and source connector can be formed respectively, and described leakage metal level and leakage connector can be formed respectively.
When forming active connector S062 and leakage connector D062, described dielectric layer also covers described source connector S062 and leakage connector D062.
In the present embodiment, described source metal level S061 and described source connector S062 constitutes comb shaped source metal level S06, described comb shaped source metal level S06 has source comb and is positioned at comb side, described source the source comb handle being connected with each source comb, the bearing of trend extending perpendicularly to described source comb of described source comb handle, described source comb corresponds to source metal level S061, and described source comb handle corresponds to source connector S062；Described leakage metal level D061 and described leakage connector D062 constitutes comb shaped drain metal level D06, described comb shaped drain metal level D06 has leakage comb and is positioned at described leakage comb side the leakage comb handle being connected with each leakage comb, the bearing of trend extending perpendicularly to described leakage comb of described leakage comb handle, described leakage comb corresponds to Lou metal level D061, and described leakage comb handle corresponds to Lou connector D062.
The source comb of described comb shaped source metal level S06, the leakage comb of comb shaped drain metal level D06 and the grid comb of finger gate electrode structure G06 are parallel to each other, the leakage comb of the source comb of each comb shaped source metal level S06 and each comb shaped drain metal level D06 is arranged alternately, and is placed with the grid comb of finger gate electrode structure G06 between source comb and the leakage comb of comb shaped drain metal level D06 of comb shaped source metal level S06.
Being the schematic diagram formed on Figure 18 basis with reference to Figure 19, Figure 19, form metal level 630 on described dielectric layer, described metal level 630 at least projects to part source metal level S061 and partly leaks the top surface of metal level D061.
The projecting direction of the top surface that described metal level 630 projects to source metal level S061 and leakage metal level D061 refers to: project along the direction being perpendicular to substrate 600 surface.
In the present embodiment, projecting to whole source metal level S061 with the top surface all leaking metal level D061 exemplarily with described metal level 630, in other embodiments, described metal level projects to part source metal level and the top surface of part leakage metal level.
When described metal level projects to the top surface of part source metal level and part leakage metal level, the position relationship of described metal level and source metal level and leakage metal level, with reference to the various situations in the second embodiment to the 5th embodiment, no longer describes in detail.
The technique forming described metal level 630 is physical gas-phase deposition or electroplating technology.The material of described metal level 630 is metal, such as aluminum, copper or albronze.
Described metal level 630 can be block structure or pectinate texture.
When metal level 630 is chosen as pectinate texture, project in the various situations of top surface of part source metal level S061 and part leakage metal level D061 at metal level 630, the pass of the bearing of trend of the bearing of trend of the comb of metal level 630 and the G061 of grid structure refers to the 3rd embodiment to the 5th embodiment, no longer describes in detail.
The bearing of trend of the G061 of described grid structure refers to: the direction being parallel in Figure 15 x-axis.
Although present disclosure is as above, but the present invention is not limited to this.Any those skilled in the art, without departing from the spirit and scope of the present invention, all can make various changes or modifications, and therefore protection scope of the present invention should be as the criterion with claim limited range.
Claims (10)
1. a RF switching devices, it is characterised in that including:
Substrate；
Grid structure, is positioned in described substrate；
Source region and drain region, lay respectively in the substrate of described grid structure both sides；
Source metal level, is positioned in described substrate, and described source metal level is corresponding with described source region to be connected；
Leakage metal level, be positioned in described substrate, described leakage metal level corresponding with described drain region connect, on the metal level of described source with described leakage metal level has dielectric layer；
Metal level, on described dielectric layer, and described metal level at least projects to part source metal level and the top surface of part leakage metal level.
2. RF switching devices according to claim 1, it is characterised in that described metal level projects to whole source metal level and the top surface of whole leakage metal level.
3. RF switching devices according to claim 1, it is characterised in that described metal level projects to part source metal level and the top surface of part leakage metal level.
4. RF switching devices according to claim 3, it is characterised in that the quantity of described grid structure is a plurality of；The quantity of described source metal level is a plurality of；The quantity of described leakage metal level is a plurality of.
5. RF switching devices according to claim 4, it is characterised in that each bar grid structure, each bar source metal level and each bar leakage metal level are parallel to each other；Each bar source metal level and each bar leakage metal level are arranged alternately, and are placed with grid structure between source metal level and leakage metal level.
6. RF switching devices according to claim 5, it is characterised in that on the bearing of trend along described grid structure, described metal level projects to part source metal level and the top surface of part leakage metal level；And along being perpendicular on the bearing of trend of described grid structure, described metal level projects to whole sources metal level and all leaks the top surface of metal level.
7. RF switching devices according to claim 1, it is characterised in that also include:
Grid connector, described grid connector is connected with one end of each bar grid structure；
Source connector, described source connector is connected with one end of each bar source metal level；
Leakage connector, one end that described leakage connector leaks metal level with each bar is connected.
8. RF switching devices according to claim 7, it is characterised in that described grid structure and described grid connector constitute finger gate electrode structure, the corresponding described grid structure of the grid comb of described finger gate electrode structure；Described source metal level and described source connector constitute comb shaped source metal level, the source comb corresponding described source metal level of described comb shaped source metal level；Described leakage metal level and described leakage connector constitute comb shaped drain metal level, the corresponding described leakage metal level of the leakage comb of described comb shaped drain metal level.
9. RF switching devices according to claim 1, it is characterised in that the material of described metal level is aluminum, copper or albronze.
10. one kind forms the method for RF switching devices described in claim 1～9 any one, it is characterised in that including:
Substrate is provided；
Form grid structure on the substrate；
The substrate of described grid structure both sides forms source region and drain region respectively；
After forming source region and drain region, form source metal level, leakage metal level and dielectric layer on the substrate, described source metal level corresponding with described source region connect, described leakage metal level corresponding with described drain region connect, on the metal level of described source with described leakage metal level is formed with dielectric layer；
Forming metal level on described dielectric layer, described metal level at least projects to part source metal level and the top surface of part leakage metal level.
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