CN105742259A - Welding plate structure and preparation method thereof - Google Patents
Welding plate structure and preparation method thereof Download PDFInfo
- Publication number
- CN105742259A CN105742259A CN201410751380.2A CN201410751380A CN105742259A CN 105742259 A CN105742259 A CN 105742259A CN 201410751380 A CN201410751380 A CN 201410751380A CN 105742259 A CN105742259 A CN 105742259A
- Authority
- CN
- China
- Prior art keywords
- layer
- metal
- pad
- protective layer
- pad structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
The invention discloses a welding plate structure and a preparation method thereof. A first barrier layer, a first metal layer, and a second barrier layer are deposited successively from top to bottom to cover the upper surface of the rest of a first protection layer and the bottom and side wall surface of a welding plate opening formed after partial etching on the first protection layer, so that a defect of poor barrier layer step coverage due to the thick protection layer can be overcome and the blocking effect of metal diffusion can be enhanced effectively. In addition, the contact resistance between the welding plate metal and the top metal layer does not increase, so that the device reliability is improved. And the preparation method can be applied to an advanced process requiring the length below 28nm; and the application range is wide.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, particularly relate to a kind of pad structure and preparation method thereof.
Background technology
In integrated circuit manufacturing process, last layer that chip makes on wafer is aluminum pad (pad), and aluminum pad is made up of Ta, TaN layer and metal AL.In the processing technology of advanced process aluminum pad; owing to protective layer (Passivation) is increasingly thicker; the coverage rate (stepcoverage) that Ta/TaN deposits ladder is poor; thus be very easy to produce breach owing to covering incomplete at pad base angle place Ta/TaN; now, the copper of top metal (Topmetal) will diffuse to aluminum pad from base angle breakage.It is diffused into routing failure, the problem that simultaneously can bring reliability time the copper in aluminum pad can cause encapsulating below.
At present, along with the development of semiconductor technology, the live width of semiconductor device is more and more less; thus it requires the thickness of protective layer thickeies, meanwhile, the coverage rate on barrier layer becomes worse and worse; and the resistance that the thickness increasing Ta/TaN can cause pad raises, and then affect the electrical performance of pad.Thus, in order to effectively prevent the metal in metal layer at top from diffusing in pad, outside instead of relying on the raising of the Technology of PVD, structural design, evade the metal of metal layer at top diffuse to and pad metal becomes those skilled in the art endeavour the direction of research.
Summary of the invention
For above-mentioned Problems existing; disclosure one pad structure and preparation method thereof; to overcome in prior art owing to protective layer is thickening, the coverage rate on the barrier layer barrier layer, place, pad base angle caused that is deteriorated covers and not exclusively produces breach, and then cause the problem that metal spreads.
To achieve these goals, the preparation method that the application describes a kind of pad structure, comprise the following steps:
A surface configuration is provided to have the substrate of metal layer at top；
Deposit the first protective layer to be covered with the upper surface by described metal layer at top；
The extremely described metal layer at top surface of first protective layer described in partial etching is to form bonding pad opening；
The first barrier layer, the first metal layer, the second barrier layer remaining upper surface of described first protective layer of covering and the bottom of described bonding pad opening and sidewall surfaces thereof it is sequentially depositing according to order from bottom to up；
Continuing preparation the second metal level cover the surface on described second barrier layer and be full of described bonding pad opening, described first barrier layer, the first metal layer, the second barrier layer and described second metal level constitute a pad；
Pad described in partial etching is to expose the part surface of remaining described first protective layer；
After continuing deposition the second protective layer, the second protective layer described in partial etching is to expose the upper surface of described second metal level.
The preparation method of above-mentioned pad structure, wherein, the span of the thickness of described the first metal layer is 150-200nm.
The preparation method of above-mentioned pad structure; wherein, the step depositing described first barrier layer includes: be sequentially depositing Ta layer according to order from bottom to up, a TaN layer covers the remaining upper surface of described first protective layer and the bottom of described bonding pad opening and sidewall surfaces thereof.
The preparation method of above-mentioned pad structure, wherein, the step depositing described second barrier layer includes: is sequentially depositing the first TiN layer, the 2nd TaN layer and the second TiN layer according to order from bottom to up and covers the surface of described the first metal layer.
The preparation method of above-mentioned pad structure, wherein, described method includes:
Deposit the second protective layer and cover the exposed upper surface of remaining described first protective layer and the exposed surface of remaining described pad；
Second protective layer described in partial etching is to expose the upper surface of described second metal level.
The preparation method of above-mentioned pad structure, wherein, the material of described the first metal layer and described second metal level is aluminum.
The preparation method of above-mentioned pad structure, wherein, the material of described metal layer at top is copper.
The preparation method of above-mentioned pad structure, wherein, described first protective layer and described second protective layer all include silicon nitride layer and silicon dioxide layer.
The application has also stated that a kind of pad structure, including:
One substrate, described substrate is provided with metal layer at top；
First protective layer, described first protective layer part covers the upper surface of described metal layer at top, and a bonding pad opening runs through described first protective layer upper surface to described metal layer at top；
One pad, described pad is full of described bonding pad opening and partly covers the upper surface of described first protective layer；
Wherein, described pad includes the first barrier layer, the first metal layer, the second barrier layer and the second metal level; and described first barrier layer covers bottom and the sidewall surfaces thereof of the part surface of described first protective layer and described bonding pad opening; described the first metal layer covers the surface on described first barrier layer, and described second barrier layer isolates described the first metal layer and described second metal level.
Above-mentioned pad structure, wherein, the span of the thickness of described the first metal layer is 150-200nm.
Above-mentioned pad structure, wherein, the including Ta layer and cover a TaN layer of described Ta layer upper surface of described first barrier layer.
Above-mentioned pad structure, wherein, described second barrier layer includes the first TiN layer, the 2nd TaN layer and the second TiN layer, described first TiN layer covers the surface of described the first metal layer, described 2nd TaN layer covers the surface of described first TiN layer, and described second TiN layer covers the surface of described 2nd TaN layer.
Above-mentioned pad structure, wherein, the material of described the first metal layer and described second metal level is aluminum.
Above-mentioned pad structure, wherein, the material of described metal layer at top is copper.
Above-mentioned pad structure, wherein, described first protective layer and described second protective layer all include silicon nitride layer and silicon dioxide layer.
Above-mentioned pad structure, wherein, described pad structure also includes the second protective layer, and described second protective layer covers the exposed sidewall surfaces of described pad and the exposed upper surface of described first protective layer.
In sum; the invention discloses a kind of pad structure and preparation method thereof; by being sequentially depositing the first barrier layer according to order from bottom to up, the bottom of bonding pad opening that the first metal layer, the second barrier layer are formed after covering the upper surface of remaining first protective layer and partial etching the first protective layer and sidewall surfaces thereof; thus compensate for the deficiency that the barrier layer step coverage rate caused owing to protective layer is thickening is poor, effectively enhance the barrier effect to metal diffusion simultaneously；Raising additionally, pad structure prepared by the method for the present invention is not result in the contact resistance between pad metal and metal layer at top, thus further increasing the reliability of device, and present invention can be suitably applied in the advanced process of below 28nm, applied range.
Concrete accompanying drawing explanation
By reading detailed description non-limiting example made with reference to the following drawings, the present invention and feature, profile and advantage will become more apparent.The part that labelling instruction identical in whole accompanying drawings is identical.Can not be drawn to scale accompanying drawing, it is preferred that emphasis is the purport of the present invention is shown.
Fig. 1-10 is the schematic flow sheet preparing pad structure in the embodiment of the present invention；
Figure 11 is the schematic diagram of pad structure in the embodiment of the present invention.
Detailed description of the invention
Below in conjunction with accompanying drawing and specific embodiment, the present invention is further illustrated, but not as limiting to the invention.
Fig. 1-10 is the schematic flow sheet preparing pad structure in the embodiment of the present invention；As Figure 1-10 shows:
The preparation method that the present embodiment relates to a kind of pad structure, comprises the steps:
Step S1 a, it is provided that surface has the substrate 1 of metal layer at top 2；This substrate 1 has been formed with semiconductor device structure (not shown), for different technique, on this substrate 1, established semiconductor device structure is different, owing to the present invention is not related to the improvement of this part, at this, just it will not go into details, structure as shown in Figure 1.
Wherein, the preferred Cu of the material (copper) of above-mentioned metal layer at top 2.
Step S2, deposits the first protective layer 3 and is covered with the upper surface by metal layer at top 2, this first protective layer 3 i.e. passivation layer；Concrete; deposit the first silicon nitride layer (not shown) and cover the upper surface of metal layer at top 2; continue deposition the first silicon dioxide layer (not shown) and cover the upper surface of the first silicon nitride layer; this first silicon nitride layer and the first silicon dioxide layer constitute above-mentioned first protective layer, structure as shown in Figure 2.
In an embodiment of the present invention, adopt the method for chemical vapour deposition (CVD) to deposit the first protective layer 3 to be covered with the upper surface by metal layer at top 2.
Step S3, above-mentioned first protective layer 3 to metal layer at top 2 surface of partial etching to form bonding pad opening, structure as shown in Figure 3.
Concrete, above-mentioned first protective layer 3 to metal layer at top 2 surface of partial etching includes with the step forming bonding pad opening:
First; spin coating one layer photoetching glue covers the surface of above-mentioned first protective layer 3; after overexposure, development; form the photoresistance with bonding pad opening figure; then adopt above-mentioned first protective layer 3 of dry etch process partial etching to expose the part surface of above-mentioned metal layer at top 2 with this photoresistance for mask, in above-mentioned first protective layer 3, form bonding pad opening.
Step S4; deposit the first barrier layer 4 and cover the remaining upper surface of the first protective layer 3 ＇ and the bottom of above-mentioned bonding pad opening and sidewall surfaces thereof; preferably, be sequentially depositing Ta layer according to order from bottom to up, a TaN layer covers the remaining upper surface of the first protective layer 3 ＇ and the bottom of bonding pad opening and sidewall surfaces thereof；Namely this first barrier layer 4 includes Ta layer and covers a TaN layer of this Ta layer upper surface, now, due to Chu Shi right angle, bonding pad opening base angle, so the first barrier layer 4 easily produces breach (i.e. weakness because covering incomplete at bonding pad opening base angle place, weakpoint, not shown), preferably, adopt physical vapour deposition (PVD) (PhysicalVaporDeposition, be called for short PVD) method deposit this first barrier layer 4, and the thickness on this first barrier layer 4 is according to concrete technology requirements set, can according to the concrete process set of application, structure as shown in Figure 4.
Step S5, deposition the first metal layer 5 covers the surface on the first barrier layer 4, preferably, the span of the thickness of this first metal layer 5 is 150-200nm (such as 150nm, 190nm, 195nm and 200nm etc.), in an embodiment of the present invention, the material of this first metal layer 5 is Al (aluminum), after having deposited this first metal layer 5, the base angle place of bonding pad opening becomes round and smooth (not shown), structure as shown in Figure 5.
Step S6, deposit the second barrier layer 6 and cover the surface of the first metal layer 5, preferably, it is sequentially depositing the first TiN layer, the 2nd TaN layer and the second TiN layer according to order from bottom to up and covers the surface of the first metal layer 5, namely this second barrier layer 6 is TiN/TaN/TiN, in other words, this second barrier layer 6 includes the first TiN layer, the 2nd TaN layer and the second TiN layer, this first TiN layer covers the surface of above-mentioned the first metal layer 5,2nd TaN layer covers the surface of the first TiN layer, and the second TiN layer covers the upper surface of TaN layer.nullIn an embodiment of the present invention，Owing to aluminum is had cohesive by TiN，So the cohesive to aluminum and the block to copper have been taken into account in the second barrier layer 6，And due to after having deposited this first metal layer 5，The base angle place of bonding pad opening becomes round and smooth，So owing to spreadability is higher without producing breach during deposition the second barrier layer 6，Therefore，Even if there is breakage (cracky particularly in bonding pad opening base angle place) on the first barrier layer 4，Metal in metal layer at top 2 diffuses to the second metal level 5，The metal of this diffusion will be stopped by the second barrier layer 6 after somewhat spreading in little scope，The metal diffusion of therefore small metal layer at top 2 all can be limited in the second metal level 5，From without diffusing in pad metal layer，The thickness on this second barrier layer 6 is according to concrete technology requirements set，Can according to the concrete process set of application，Structure as shown in Figure 6.
Step S7, after continuing surface and the full bonding pad opening having deposited the first barrier layer 4, the first metal layer 5 and the second barrier layer 6 that deposition metal level covers described second barrier layer 6, carry out flatening process, form the second metal level 7 of surface and the full bonding pad opening covering the second barrier layer 6, this second metal level 7 i.e. pad metal；Wherein, the deposit thickness of this metal level meets process requirements, now the first barrier layer 4, the first metal layer the 5, second barrier layer 6 and the second metal level 7 constitute a pad, preferably, the material of this second metal level 7 is Al (aluminum), the technique depositing this second metal level 7 adopts technology well-known to those skilled in the art, and at this, just it will not go into details, structure as shown in Figure 7.
In an embodiment of the present invention, the thickness of above-mentioned second metal level is much larger than the thickness of above-mentioned the first metal layer.
Additionally, the height of above-mentioned bonding pad opening and width value all much larger than above-mentioned first barrier layer, the first metal layer, the second barrier layer 2 times of one-tenth-value thickness 1/10 sum.
Step S8; the above-mentioned pad of partial etching is to expose the part surface of remaining first protective layer 3 ＇; concrete; surface spin coating photoresist in the second metal level 7; after through exposure and development; form the photoresistance covering above-mentioned second metal level 7 mid portion surface; etch above-mentioned second metal level 7, above-mentioned second barrier layer 6, above-mentioned the first metal layer 5 and above-mentioned first barrier layer 4 to the surface of remaining first protective layer 3 ＇ with this photoresistance for mask successively part to stop; exposed with the part surface by remaining first protective layer 3 ＇, structure as shown in Figure 8.
Step S9, deposit the second protective layer 8 and cover remaining second metal level 7 ＇ (or remaining pad) and remaining first exposed for protective layer 3 ＇ surface, preferably, the method adopting chemical vapour deposition (CVD) deposits this second protective layer 8, concrete, deposit the second silicon nitride layer (not shown) and cover remaining second metal level 7 ＇ and remaining first exposed for protective layer 3 ＇ surface, continue deposition the second silicon dioxide layer (not shown) and cover the upper surface of the second silicon nitride layer, this second silicon nitride layer and the second silicon dioxide layer form above-mentioned second protective layer 8, structure as shown in Figure 9.
Step S10, above-mentioned second protective layer 8 of partial etching is exposed with the surface by remaining second metal level 7 ＇, completes last layer that chip makes on wafer, structure as shown in Figure 10.
From above-described embodiment, adopt pad structure prepared by the method for the present invention, if there is breakage on the first barrier layer 4 at A place, bonding pad opening base angle (as shown in Figure 10), metal layer at top 2 spreads, the metal of this diffusion will be stopped by the second barrier layer 6 after somewhat spreading in little scope, the metal diffusion of therefore small metal layer at top 2 all can be limited in the second metal level 5, from without diffusing in pad metal, thus effectively compensate for the deficiency of PVD stepcoverage rate variance that is thickening due to protective layer (passivation layer) in advanced process and that cause, and then effectively strengthen the barrier effect of metal diffusion in pad structure, prevent chip failure.And the preparation method of this pad structure is applied to below 28nm processing procedure, namely suitable in advanced process, have wide range of applications.
Figure 11 is the schematic diagram of pad structure in the embodiment of the present invention；As shown in figure 11:
The present embodiment relates to a kind of pad structure; including: substrate 100, metal layer at top the 101, first protective layer 102, pad and the second protective layer 107; metal layer at top 101 is arranged at the top of above-mentioned substrate 100; first protective layer 102 part covers the upper surface of metal layer at top 101; and one bonding pad opening run through the upper surface of the first protective layer 102 to metal layer at top 101, above-mentioned pad is full of this bonding pad opening and part covers the upper surface of the first protective layer 102；Second protective layer 107 covers the exposed sidewall surfaces of pad and the exposed upper surface of the first protective layer 102.
Wherein, pad includes the first barrier layer 103, the first metal layer the 104, second barrier layer 105; and second metal level 106; and above-mentioned first barrier layer 103 covers the part surface of the first protective layer 102 and the bottom of bonding pad opening and sidewall surfaces thereof; the first metal layer 104 covers the surface on the first barrier layer 103; second barrier layer 105 isolates the first metal layer 104 and the second metal level 106; second barrier layer 105 covers the surface on the first barrier layer 103, and the second metal level 106 covers the surface on above-mentioned second barrier layer 105；And cover the second protective layer 107 above first protective layer 102 of another part.
In an embodiment of the present invention, this second metal level 106 i.e. pad metal, and this pad metal becomes T-type structure, above-mentioned pad to be T-type structure.
Additionally, the thickness of above-mentioned second metal level 106 is much larger than the thickness of above-mentioned the first metal layer 104；The height of above-mentioned bonding pad opening and width value all much larger than above-mentioned first barrier layer 103,2 times of the one-tenth-value thickness 1/10 sum on the first metal layer the 104, second barrier layer 105.
In an embodiment of the present invention, above-mentioned substrate has been formed with semiconductor device structure (not shown), because the present invention is not related to the improvement of this part, therefore do not repeat them here.
Preferably, the span of the thickness of above-mentioned the first metal layer 104 is 150-200nm (such as 150nm, 190nm, 195nm and 200nm etc.).
Further, the including Ta layer and cover a TaN layer of described Ta layer upper surface of above-mentioned first barrier layer 103；Above-mentioned second barrier layer 105 includes the first TiN layer, the 2nd TaN layer and the second TiN layer, and the first TiN layer covers the surface of above-mentioned the first metal layer 104, and the 2nd TaN layer covers the surface of the first TiN layer, and the second TiN layer covers the upper surface of the 2nd TaN layer.
Preferably, the material of above-mentioned metal layer at top 101 is copper, and the material of the first metal 104 and described second metal level 107 is aluminum.
Further, above-mentioned first protective layer 102 and 107 second protective layer all includes silicon nitride layer and silicon dioxide layer.
The pad structure that the present embodiment provides, if there is breakage on the first barrier layer 103 at B place, bonding pad opening base angle, metal in metal layer at top 101 diffuses to the second metal level 104, the metal of this diffusion will be stopped by the second barrier layer 105 after somewhat spreading in little scope, the metal diffusion of therefore small metal layer at top 101 all can be limited in the second metal level 104, from without diffusing in pad metal, thus effectively compensate for the deficiency of PVD stepcoverage rate variance that is thickening due to protective layer (passivation layer) in advanced process and that cause, and then effectively strengthen the barrier effect of metal diffusion in pad structure, prevent chip failure.And the preparation method of this pad structure can be applicable to below 28nm processing procedure, namely suitable in advanced process, have wide range of applications.
It is seen that, the present embodiment is the constructive embodiment corresponding with the embodiment of the above-mentioned method preparing pad structure, and the present embodiment can be worked in coordination enforcement with the embodiment of the method preparing pad structure.The relevant technical details mentioned in the embodiment of the above-mentioned method preparing pad structure is still effective in the present embodiment, in order to reduce repetition, repeats no more here.Correspondingly, the relevant technical details mentioned in the present embodiment is also applicable in the embodiment of the above-mentioned method preparing pad structure.
In sum; the invention discloses a kind of pad structure and preparation method thereof; by being sequentially depositing the first barrier layer according to order from bottom to up, the bottom of bonding pad opening that the first metal layer, the second barrier layer are formed after covering the upper surface of remaining first protective layer and partial etching the first protective layer and sidewall surfaces thereof; thus compensate for the deficiency that the barrier layer step coverage rate caused owing to protective layer is thickening is poor, effectively enhance the barrier effect to metal diffusion simultaneously；Additionally, due to the contact resistance being not result between pad metal and metal layer at top raises, thus further increasing the reliability of device, and present invention can be suitably applied in the advanced process of below 28nm, applied range.
It should be appreciated by those skilled in the art that those skilled in the art are realizing described change case in conjunction with prior art and above-described embodiment, do not repeat at this.Such change case has no effect on the flesh and blood of the present invention, does not repeat them here.
Above presently preferred embodiments of the present invention is described.It is to be appreciated that the invention is not limited in above-mentioned particular implementation, the equipment and the structure that are not wherein described in detail to the greatest extent are construed as and are practiced with the common mode in this area；Any those of ordinary skill in the art, without departing under technical solution of the present invention ambit, all may utilize the method for the disclosure above and technology contents and technical solution of the present invention is made many possible variations and modification, or it being revised as the Equivalent embodiments of equivalent variations, this has no effect on the flesh and blood of the present invention.Therefore, every content without departing from technical solution of the present invention, the technical spirit of the foundation present invention, to any simple modification made for any of the above embodiments, equivalent variations and modification, all still falls within the scope of technical solution of the present invention protection.
Claims (16)
1. the preparation method of a pad structure, it is characterised in that comprise the following steps:
A surface configuration is provided to have the substrate of metal layer at top；
Deposit the first protective layer to be covered with the upper surface by described metal layer at top；
The extremely described metal layer at top surface of first protective layer described in partial etching is to form bonding pad opening；
The first barrier layer, the first metal layer, the second barrier layer remaining upper surface of described first protective layer of covering and the bottom of described bonding pad opening and sidewall surfaces thereof it is sequentially depositing according to order from bottom to up；
Continuing preparation the second metal level cover the surface on described second barrier layer and be full of described bonding pad opening, described first barrier layer, the first metal layer, the second barrier layer and described second metal level constitute a pad；
Pad described in partial etching is to expose the part surface of remaining described first protective layer；
After continuing deposition the second protective layer, the second protective layer described in partial etching is to expose the upper surface of described second metal level.
2. the preparation method of pad structure as claimed in claim 1, it is characterised in that the span of the thickness of described the first metal layer is 150-200nm.
3. the preparation method of pad structure as claimed in claim 1; it is characterized in that, the step depositing described first barrier layer includes: be sequentially depositing Ta layer according to order from bottom to up, a TaN layer covers the remaining upper surface of described first protective layer and the bottom of described bonding pad opening and sidewall surfaces thereof.
4. the preparation method of pad structure as claimed in claim 1, it is characterized in that, the step depositing described second barrier layer includes: is sequentially depositing the first TiN layer, the 2nd TaN layer and the second TiN layer according to order from bottom to up and covers the surface of described the first metal layer.
5. the preparation method of pad structure as claimed in claim 1, it is characterised in that described method includes:
Deposit the second protective layer and cover the exposed upper surface of remaining described first protective layer and the exposed surface of remaining described pad；
Second protective layer described in partial etching is to expose the upper surface of described second metal level.
6. the preparation method of pad structure as claimed in claim 1, it is characterised in that the material of described the first metal layer and described second metal level is aluminum.
7. the preparation method of pad structure as claimed in claim 1, it is characterised in that the material of described metal layer at top is copper.
8. the preparation method of pad structure as claimed in claim 1, it is characterised in that described first protective layer and described second protective layer all include silicon nitride layer and silicon dioxide layer.
9. a pad structure, it is characterised in that including:
Substrate, described substrate is provided with metal layer at top；
First protective layer, described first protective layer part covers the upper surface of described metal layer at top, and a bonding pad opening runs through described first protective layer upper surface to described metal layer at top；
Pad, described pad is full of described bonding pad opening and partly covers the upper surface of described first protective layer；
Wherein, described pad includes the first barrier layer, the first metal layer, the second barrier layer and the second metal level; and described first barrier layer covers bottom and the sidewall surfaces thereof of the part surface of described first protective layer and described bonding pad opening; described the first metal layer covers the surface on described first barrier layer, and described second barrier layer isolates described the first metal layer and described second metal level.
10. pad structure as claimed in claim 9, it is characterised in that the span of the thickness of described the first metal layer is 150-200nm.
11. pad structure as claimed in claim 9, it is characterised in that the including Ta layer and cover a TaN layer of described Ta layer upper surface of described first barrier layer.
12. pad structure as claimed in claim 9, it is characterized in that, described second barrier layer includes the first TiN layer, the 2nd TaN layer and the second TiN layer, described first TiN layer covers the surface of described the first metal layer, described 2nd TaN layer covers the surface of described first TiN layer, and described second TiN layer covers the surface of described 2nd TaN layer.
13. pad structure as claimed in claim 9, it is characterised in that the material of described the first metal layer and described second metal level is aluminum.
14. pad structure as claimed in claim 9, it is characterised in that the material of described metal layer at top is copper.
15. pad structure as claimed in claim 9, it is characterised in that described first protective layer and described second protective layer all include silicon nitride layer and silicon dioxide layer.
16. pad structure as claimed in claim 9, it is characterised in that described pad structure also includes the second protective layer, described second protective layer covers the exposed sidewall surfaces of described pad and the exposed upper surface of described first protective layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410751380.2A CN105742259A (en) | 2014-12-09 | 2014-12-09 | Welding plate structure and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410751380.2A CN105742259A (en) | 2014-12-09 | 2014-12-09 | Welding plate structure and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105742259A true CN105742259A (en) | 2016-07-06 |
Family
ID=56239743
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410751380.2A Pending CN105742259A (en) | 2014-12-09 | 2014-12-09 | Welding plate structure and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105742259A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1627515A (en) * | 2003-10-10 | 2005-06-15 | 台湾积体电路制造股份有限公司 | Semiconductor assembly and its mfg.method |
| US20080142971A1 (en) * | 2006-12-14 | 2008-06-19 | Lam Research Corporation | Interconnect structure and method of manufacturing a damascene structure |
| US8148257B1 (en) * | 2010-09-30 | 2012-04-03 | Infineon Technologies Ag | Semiconductor structure and method for making same |
| CN102738117A (en) * | 2011-04-13 | 2012-10-17 | 中国科学院微电子研究所 | Interconnect structure and method of forming the same |
-
2014
- 2014-12-09 CN CN201410751380.2A patent/CN105742259A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1627515A (en) * | 2003-10-10 | 2005-06-15 | 台湾积体电路制造股份有限公司 | Semiconductor assembly and its mfg.method |
| US20080142971A1 (en) * | 2006-12-14 | 2008-06-19 | Lam Research Corporation | Interconnect structure and method of manufacturing a damascene structure |
| US8148257B1 (en) * | 2010-09-30 | 2012-04-03 | Infineon Technologies Ag | Semiconductor structure and method for making same |
| CN102738117A (en) * | 2011-04-13 | 2012-10-17 | 中国科学院微电子研究所 | Interconnect structure and method of forming the same |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7847402B2 (en) | BEOL interconnect structures with improved resistance to stress | |
| US11069630B2 (en) | Structures and methods for reducing thermal expansion mismatch during integrated circuit packaging | |
| US9793106B2 (en) | Reliability improvement of polymer-based capacitors by moisture barrier | |
| CN105321891B (en) | Semiconductor devices and its manufacturing method | |
| US8487445B1 (en) | Semiconductor device having through electrodes protruding from dielectric layer | |
| EP3154078A2 (en) | Fan-out wafer level package structure | |
| CN102610563A (en) | Method for preparing copper dual damascene structure | |
| CN109585360A (en) | The method for forming semiconductor structure | |
| CN115662903B (en) | Method for manufacturing semiconductor device and semiconductor device | |
| US20110180922A1 (en) | Semiconductor chip, seal-ring structure and manufacturing process thereof | |
| US6649512B1 (en) | Method for improving adhesion of a low k dielectric to a barrier layer | |
| CN105826329B (en) | A kind of production method of array substrate, array substrate and liquid crystal display panel | |
| CN105742259A (en) | Welding plate structure and preparation method thereof | |
| CN106601624B (en) | A kind of metal connecting line method and structure of compound semiconductor | |
| NO320484B1 (en) | Semiconductor device with passivation film | |
| TWI358100B (en) | Test pattern for reliability measurement of copper | |
| CN105632891A (en) | Preparation method of PIP capacitor | |
| KR100773687B1 (en) | Method for forming metal line of semiconductor device | |
| CN104716085B (en) | A kind of semiconductor devices and its manufacturing method | |
| JP6149476B2 (en) | Manufacturing method of semiconductor device | |
| KR100827495B1 (en) | Pad part structure of a semiconductor device for decreasing chip area and manufacturing method thereof | |
| CN105977236A (en) | Bonding wafer structure and production method thereof | |
| JP2016152275A (en) | Semiconductor device manufacturing method | |
| JPS5936932A (en) | Semiconductor integrated circuit | |
| CN102800626A (en) | Method for preparing dielectric film on dual damascene structure through etching forming process |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20160706 |