CN105738428A - Organic garbage disposer - Google Patents
Organic garbage disposer Download PDFInfo
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- CN105738428A CN105738428A CN201610067497.8A CN201610067497A CN105738428A CN 105738428 A CN105738428 A CN 105738428A CN 201610067497 A CN201610067497 A CN 201610067497A CN 105738428 A CN105738428 A CN 105738428A
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- polyvinyl alcohol
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- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/22—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating capacitance
- G01N27/223—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating capacitance for determining moisture content, e.g. humidity
- G01N27/225—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating capacitance for determining moisture content, e.g. humidity by using hygroscopic materials
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Abstract
The invention discloses an organic garbage disposer.A ZnO-based humidity-sensitive sensor module is installed outside of the garbage disposer and can detect humidity of the work environment of the garbage disposer.A humidity-sensitive sensing component of the ZnO-based humidity-sensitive sensor module is prepared with a silicon nanoporous pillar material as a substrate and zinc oxide nanowires and a graphene material as sensitive materials.A device structure is of an interdigital electrode type.The structure has a large specific surface area and a good gas diffusion channel.A dehumidified polyvinyl alcohol-EDTMPS-polysulfone base film hollow fiber composite film assembly is arranged on the surface layer of the garbage disposer, and humidity sensitivity, moisture absorption and corrosion resistance of the garbage disposer are greatly improved.
Description
Technical field
The present invention relates to field of garbage disposal, be specifically related to a kind of organic garbage disposal.
Background technology
Rubbish refers to need not or useless solid, flowing material.In densely populated big city, garbage disposal is one and makes us head
The problem of pain.Common way be collect after be sent to landfill, or incinerate with incinerator.
Organic garbage disposal is the device of special disposal organic waste, and command module has kitchen, school, restaurant unit etc..
But, conventional garbage datatron does not the most possess humidity detecting function, when its working environment humidity is excessive, can cause equipment
Infringement, greatly limit its range of application simultaneously.
Summary of the invention
It is an object of the invention to avoid above-mentioned weak point of the prior art to provide a kind of organic garbage disposal.
The purpose of the present invention is achieved through the following technical solutions:
The invention provides a kind of organic garbage disposal, it is characterised in that: the outside of described garbage disposer (1) is provided with
Zno-based moisture sensor module (2), garbage disposer working environment humidity can be detected by it；Described zno-based wet sensitive
Sensor assembly (2) is mainly made up of wet sensitive sensing element and data read element, and described wet sensitive sensing element is interdigital electrode type,
Including silicon chip substrate (10), Si-NPA (20), zinc oxide nanowire (30) and graphene layer (40)；Described garbage disposer
(1) microprocessor, LED display lamp bar and wireless communication module it are additionally provided with on；The input of described microprocessor is with described
The outfan of ZnO moisture sensor module (2) connects, and described ZnO moisture sensor module (2) detected value reaches preset value,
Described microprocessor controls LED display lamp bar and flashes, and described LED display lamp bar connects a buzzer, and LED shows
Touch buzzer while showing the flicker of lamp bar and send alarm；Described wireless communication module is CC2420 wireless communication module, described
ZnO moisture sensor module (2) can be mobile by described CC2420 wireless communication module transmission detection data to data basestation
By the Internet, user terminal can check that detection data are maybe uploaded to cloud storage center by testing result, form detection and monitoring network；
Described garbage disposer (1) output electric wire sidewall on be provided with a polyvinyl alcohol for dehumidification-ethylenediamine tetraacetic methene phosphoric acid-
Polysulfones basement membrane hollow fiber composite membrane assembly, this membrane module is by polyvinyl alcohol-ethylenediamine tetraacetic methene phosphoric acid-polysulfones basement membrane doughnut
Composite membrane is fixed in glass electrode, and glass electrode is connected with moisture sensor；Described zinc oxide nanowire (30) length about 13
μm。
Preferably, the preparation method of described wet sensitive sensing element is as follows:
Step one, prepares Si-NPA substrate: the silicon chip substrate (10) of 3cm × 3cm is included clean dirt, hydro-thermal
Method corrosion preparation Si-NPA substrate；1. take the silicon chip of 3cm × 3cm, silicon chip is placed in sulphuric acid and hydrogen peroxide volume ratio 4:1
Mixed solution in, supersound process 20min, taking-up with deionized water clean, to remove the organic impurities of silicon chip surface；By silicon
It is H that sheet is positioned over volume ratio2O:H2O2: NH4In the mixed solution of OH=5:2:1, ultrasonic cleaning 20min, take subsequently
Go out and clean, to remove Organic substance and the metal complex of silicon chip surface with deionized water；2. utilize hydro-thermal method to corrode and prepare Si-NPA:
Weigh the Fe (NO of 1.0g3)·9H2O pours in politef, is added thereto to 20ml deionized water and 30ml 40% subsequently
HF solution；The silicon chip that upper step is cleaned is put in solution, adds a cover and put in water heating kettle, subsequently water heating kettle is put into drying baker
In, 180 DEG C of constant temperature keep 30min, after natural cooling, take out Wafer Cleaning and i.e. obtain Si-NPA substrate；
Step 2, growth of zinc oxide nano line: use magnetron sputtering to combine thermal oxidation method and prepare zinc oxide nanowire；By silicon nanometer
Hole post substrate is put in magnetic control sputtering device, under the conditions of sputtering voltage 220V, sputtering current 0.8A, and magnetron sputtering Zn film,
Thickness is 50nm, puts it into subsequently in batch-type furnace, and at 400 DEG C, thermal oxidation method processes 4h, obtains diameter about 30nm's
Zinc oxide nanowire；
Step 3, grows graphene layer: use process for preparing graphenes by chemical vapour deposition；First magnetic on the substrate that upper step obtains
Control sputtering layer of metal Ni film, thickness is about 5nm；Secondly, this substrate is put in tube furnace, is warming up to 900 DEG C, presses
Given pace be passed through hydrogen as protection reducing gas, stablize 30min, then, be passed through methane 2h the most simultaneously,
Temperature fall is started after stopping being passed through methane；Under Ni catalyst action, methane molecule at high temperature can be cracked into carbon atom and hydrogen
Atom, at temperature-fall period and under the protection of hydrogen, carbon atom can formation of deposits one layer graphene thin film；
Step 4, is deposited with interdigital electrode: after obtaining growing the silicon nano hole column substrate having zinc oxide nanowire and Graphene, at lining
Basal surface covers interdigital electrode mask, utilizes magnetron sputtering method to be deposited with Au thin film thick for one layer of 500nm on its surface as electricity
Pole；
Step 5, assembles sensing element and reads data element: the both positive and negative polarity wire reading data element is connected in interdigital electrode,
Two parts composition Zinc oxide-base moisture sensor device；
The preparation method of described polyvinyl alcohol-ethylenediamine tetraacetic methene phosphoric acid-polysulfones basement membrane hollow fiber composite membrane assembly is as follows:
Step one, polysulfone hollow fibre basement membrane pretreatment: polysulfone hollow fibre basement membrane pretreatment to be carried out, spend
After ionized water soaks 12h, with the soak with hydrochloric acid 60min of 1.0mol/l, remove glycerin layer and other organic solvents on membrane removal surface；
Then with in the sodium hydroxide solution of 1.0mol/l and the hydrochloric acid of excess, finally repeatedly rinse with deionized water, make film surface in
Property, dry in the shade standby；
Step 2, prepares polyvinyl alcohol-ethylenediamine tetraacetic methene phosphoric acid-polysulfone hollow fibre composite membrane: average by certain mass gathers
Right be 1750 ± 50 polyvinyl alcohol add in deionized water, the most molten to polyvinyl alcohol at 50 DEG C of stirred in water bath about 3h
Solve, obtain 5wt% polyvinyl alcohol homogeneous phase aqueous solution；A certain amount of ethylenediamine tetraacetic methene phosphoric acid is added after solution is cooled to room temperature,
And it being stirred at room temperature 1.5h, standing and defoaming i.e. obtains casting solution；By the polysulfones basement membrane (molecular cut off 30000) through pretreatment
Take out after casting solution soaks 20min, be vertically fixed on the guide frame that dries in the air and dry in the shade；By the film through primary coating in casting solution again
After soaking 20min, reversely it is fixed on and dries in the air on guide frame, dry at room temperature over night, prepare required PVA-EDTMPA/PS hollow
Composite fiber membrane.
Step 3, fixing: polyvinyl alcohol-ethylenediamine tetraacetic methene phosphoric acid-polysulfone hollow fibre composite membrane is fixed in glass electrode.
There is advantages that
1. configuration aspects, the present invention uses Si-NPA (silicon nano hole column) material to be substrate, ZnO NWs (zinc oxide nanowire)
Being sensitive material in conjunction with Graphene, this structure has great specific surface area and good gas diffusion paths, substantially increases this
The sensitivity of sensitive material in garbage disposer；
2. using grapheme material can increase the conductivity of material greatly, hydrone primary attachment is at nano wire and graphite simultaneously
The surface of alkene, is easily desorbed, and the repeatability that humidity is responded by this garbage disposer is good；
3. preparation process material consumption is few, and the controllable degree of technique is high, device small volume and less weight, it is easy to batch production.
Accompanying drawing explanation
Utilize accompanying drawing that invention is described further, but the embodiment in accompanying drawing does not constitute any limitation of the invention, for this
The those of ordinary skill in field, on the premise of not paying creative work, it is also possible to obtain other accompanying drawing according to the following drawings.
Fig. 1 is the schematic diagram of garbage disposer of the present invention.
Fig. 2 is sensor sensing element partial schematic diagram.
Detailed description of the invention
Sensor technology is main path and the means that can obtain various information in nature, production field.It is a kind of modern section
The cutting edge technology of skill, it is one of three big pillars of modern information technologies, is the important base weighing a national science and technology level of development
Accurate.According to definition, sensor is: " can experience the measured of regulation and be converted into the device of usable output signal according to certain rule
Part or device, be generally made up of sensing element, conversion element and measuring circuit." sensing element be can direct feeling measured also
It is converted into and has the electricity determining relation or the element of physical quantity easily becoming electricity with measured.Conversion element is can be by quick
The measured element being converted directly into the electricity determining relation that sensing unit is experienced.Conversion element is exported by measuring circuit
The signal of telecommunication is converted to the circuit of easy-to-handle capable telecommunications number.
Humidity refers to the content of water vapor in air.Along with the development of modern science and technology, to the Detection & Controling of humidity in productive life
Having very important meaning, the application of moisture sensor is more extensive, and such as moisture sensor is at such as household electrical appliance, vapour
The field such as car, industrial or agricultural has a wide range of applications.
Dew cell refers to that have response to ambient humidity maybe can be converted to can measure accordingly the element of signal by ambient humidity, its
Have a wide range of applications in fields such as industrial and agricultural production, environment measuring and Engineering Control.The core of humidity sensor is humidity-sensitive material,
It is the hydrone utilizing adsorption effect directly to adsorb in air, makes the electrology characteristic etc. of material change, thus detects humidity
Change.Zinc oxide is a kind of semiconductor material with wide forbidden band, and it is in fields such as sensor, solaode, lithium battery, catalysis
All it is widely used.And zinc oxide material to have preparation cost low, chemical stability, Heat stability is good, prepare controlled and
The advantages such as pattern is abundant, are a kind of preferably humidity sensor material.The pattern that has additionally, due to nano material itself, structure
Etc. the advantage of aspect, nano zinc oxide material is the most sensitive to humidity of external environment condition etc., has obvious Unordered system.
After humidity sensor refers to utilize humidity-sensitive material adsorbed water molecule, the principle that measured amount changes is made.Generally connect
The theory being subject to be the Water Molecular Adsorption in air when sensitive material surface and grain boundaries, reduce surface and the grain boundary resistance of material.
The problem such as the highest, response recovery time length for existing moisture sensor sensitivity, this programme based on nano zinc oxide material,
It is prepared for the zinc oxide nanowire with large specific surface area, and combines the grapheme material that conductivity is high, make moisture sensor.
Moisture sensor of the present invention is made up of wet sensitive sensing element part and data read element part.Wherein, wet sensitive sensing element
Based on zinc oxide nanowire, making in conjunction with grapheme material, device architecture is interdigital electrode type, wet at moisture sensor periphery
In the case of degree change, Water Molecular Adsorption can change in the speed of sensitive material surface and crystal boundary, causes leading of sensitive material
Electricity rate changes, and then reflects its capacitance variations from read element part；Digital independent element is with microprocessor, and it is
Apply the voltage of characteristic frequency to sensing element, read different numerical value according to the change of sensing element electric capacity at this voltage and show
Show the change of ambient humidity.
The present invention is further described in explanation below in conjunction with the accompanying drawings.
Fig. 1 is the schematic diagram of garbage disposer of the present invention.The outside of garbage disposer (1) is provided with zno-based moisture sensor mould
Block (2).
Fig. 2 is sensor sensing element partial schematic diagram.Wherein: 10-silicon chip substrate, 20-Si-NPA, 30-zinc oxide nanowire,
40-graphene layer.
The invention will be further described with the following Examples.
Embodiment 1:
A kind of organic garbage disposal as shown in Figure 1, the outside of described garbage disposer 1 is provided with zno-based moisture sensor
Module 2；Described zno-based moisture sensor module 2 is mainly made up of wet sensitive sensing element and data read element.Such as Fig. 2 institute
Showing, described wet sensitive sensing element is interdigital electrode type, and it includes silicon chip substrate 10, Si-NPA20, zinc oxide nanowire 30 and
Graphene layer 40；Microprocessor, LED display lamp bar and wireless communication module it is additionally provided with on described garbage disposer 1；Described
The input of microprocessor is connected with the outfan of described ZnO moisture sensor module, and described ZnO moisture sensor module is examined
Measured value reaches preset value, and described microprocessor controls LED display lamp bar and flashes, and described LED display lamp bar connects one
Individual buzzer, touches buzzer while the flicker of LED display lamp bar and sends alarm；Described wireless communication module be CC2420 without
Line communication module, described ZnO moisture sensor module can send detection data to number by described CC2420 wireless communication module
According to base station, by the Internet, mobile subscriber terminal can be checked that detection data are maybe uploaded to cloud storage center by testing result, form inspection
Survey and monitoring network；It is provided with a polyvinyl alcohol-ethylenediamine tetraacetic for dehumidification on the output electric wire sidewall of described garbage disposer
Methene phosphoric acid-polysulfones basement membrane hollow fiber composite membrane assembly, this membrane module is by polyvinyl alcohol-ethylenediamine tetraacetic methene phosphoric acid-polysulfones basement membrane
Hollow fiber composite membrane is fixed in glass electrode, and glass electrode is connected with moisture sensor；Described zinc oxide nanowire 30 length
About 13 μm.
Preferably, the preparation method of described wet sensitive sensing element is as follows:
Step one, prepares Si-NPA substrate: the silicon chip substrate of 3cm × 3cm being included, clean dirt, hydro-thermal method are corroded
Preparation Si-NPA substrate；1. taking the silicon chip of 3cm × 3cm, the mixing that silicon chip is placed in sulphuric acid and hydrogen peroxide volume ratio 4:1 is molten
In liquid, supersound process 20min, taking-up deionized water cleans, to remove the organic impurities of silicon chip surface；Silicon chip is positioned over
Volume ratio is H2O:H2O2: NH4In the mixed solution of OH=5:2:1, ultrasonic cleaning 20min, subsequently take out spend from
Sub-water cleans, to remove Organic substance and the metal complex of silicon chip surface；2. hydro-thermal method corrosion preparation Si-NPA is utilized: weigh 1.0
Fe (the NO of g3)·9H2O pours in politef, is added thereto to 20ml deionized water and the HF of 30ml 40% subsequently
Solution；The silicon chip that upper step is cleaned is put in solution, adds a cover and put in water heating kettle, subsequently water heating kettle is put in drying baker, 180 DEG C
Constant temperature keeps 30min, after natural cooling, takes out Wafer Cleaning and i.e. obtains Si-NPA substrate；
Step 2, growth of zinc oxide nano line: use magnetron sputtering to combine thermal oxidation method and prepare zinc oxide nanowire；By silicon nanometer
Hole post substrate is put in magnetic control sputtering device, under the conditions of sputtering voltage 220V, sputtering current 0.8A, and magnetron sputtering Zn film,
Thickness is 50nm, puts it into subsequently in batch-type furnace, and at 400 DEG C, thermal oxidation method processes 4h, obtains diameter about 30nm's
Zinc oxide nanowire；
Step 3, grows graphene layer: use process for preparing graphenes by chemical vapour deposition；First magnetic on the substrate that upper step obtains
Control sputtering layer of metal Ni film, thickness is about 5nm；Secondly, this substrate is put in tube furnace, is warming up to 900 DEG C, presses
Given pace be passed through hydrogen as protection reducing gas, stablize 30min, then, be passed through methane 2h the most simultaneously,
Temperature fall is started after stopping being passed through methane；Under Ni catalyst action, methane molecule at high temperature can be cracked into carbon atom and hydrogen
Atom, at temperature-fall period and under the protection of hydrogen, carbon atom can formation of deposits one layer graphene thin film；
Step 4, is deposited with interdigital electrode: after obtaining growing the silicon nano hole column substrate having zinc oxide nanowire and Graphene, at lining
Basal surface covers interdigital electrode mask, utilizes magnetron sputtering method to be deposited with Au thin film thick for one layer of 500nm on its surface as electricity
Pole；
Step 5, assembles sensing element and reads data element: the both positive and negative polarity wire reading data element is connected in interdigital electrode,
Two parts composition Zinc oxide-base moisture sensor device；
Wherein, the preparation method of described polyvinyl alcohol-ethylenediamine tetraacetic methene phosphoric acid-polysulfones basement membrane hollow fiber composite membrane assembly is as follows:
Step one, polysulfone hollow fibre basement membrane pretreatment: polysulfone hollow fibre basement membrane pretreatment to be carried out, spend
After ionized water soaks 12h, with the soak with hydrochloric acid 60min of 1.0mol/l, remove glycerin layer and other organic solvents on membrane removal surface；
Then with in the sodium hydroxide solution of 1.0mol/l and the hydrochloric acid of excess, finally repeatedly rinse with deionized water, make film surface in
Property, dry in the shade standby；
Step 2, prepares polyvinyl alcohol-ethylenediamine tetraacetic methene phosphoric acid-polysulfone hollow fibre composite membrane: average by certain mass gathers
Right be 1750 ± 50 polyvinyl alcohol add in deionized water, the most molten to polyvinyl alcohol at 50 DEG C of stirred in water bath about 3h
Solve, obtain 5wt% polyvinyl alcohol homogeneous phase aqueous solution；A certain amount of ethylenediamine tetraacetic methene phosphoric acid is added after solution is cooled to room temperature,
And it being stirred at room temperature 1.5h, standing and defoaming i.e. obtains casting solution；By the polysulfones basement membrane (molecular cut off 30000) through pretreatment
Take out after casting solution soaks 20min, be vertically fixed on the guide frame that dries in the air and dry in the shade；By the film through primary coating in casting solution again
After soaking 20min, reversely it is fixed on and dries in the air on guide frame, dry at room temperature over night, prepare required PVA-EDTMPA/PS hollow
Composite fiber membrane.
Step 3, fixing: polyvinyl alcohol-ethylenediamine tetraacetic methene phosphoric acid-polysulfone hollow fibre composite membrane is fixed in glass electrode.
Wet sensitive is tested:
Zinc oxide-base moisture sensor is put in control appliance of temperature and humidity.Test temperature is set as 20 DEG C, then controls relatively
Range of humidity variation is 10%～95%, reads the electric capacity of sensing element with humidity situation of change；
The sensitivity definition of dew cell is: CRH-C11/ C11× 100%, wherein CRHFor obtaining under test environment humidity
The component capacitance value arrived, C11Capacitance for 11% time element of relative humidity.Response or the recovery time of dew cell are defined as
Testing capacitor value reaches the time used by total variation 80% at the variable quantity of 11%RH to 75%RH；
When testing frequency and being 100Hz, under the relative humidity of 15%, 35%, 55%, 75%, 95%, sensing element
Sensitivity be respectively 4,69,264,1097 and 2571, response and recovery time are respectively 7s and 11s, and test result shows
Showing that this garbage disposer has good wet sensitive performance, highly sensitive, response time is short.
Embodiment 2
A kind of organic garbage disposal as shown in Figure 1, the outside of described garbage disposer 1 is provided with zno-based moisture sensor
Module 2；Described zno-based moisture sensor module 2 is mainly made up of wet sensitive sensing element and data read element.Such as Fig. 2 institute
Showing, described wet sensitive sensing element is interdigital electrode type, and it includes silicon chip substrate 10, Si-NPA20, zinc oxide nanowire 30 and
Graphene layer 40；Microprocessor, LED display lamp bar and wireless communication module it is additionally provided with on described garbage disposer 1；Described
The input of microprocessor is connected with the outfan of described ZnO moisture sensor module, and described ZnO moisture sensor module is examined
Measured value reaches preset value, and described microprocessor controls LED display lamp bar and flashes, and described LED display lamp bar connects one
Individual buzzer, touches buzzer while the flicker of LED display lamp bar and sends alarm；Described wireless communication module be CC2420 without
Line communication module, described ZnO moisture sensor module can send detection data to number by described CC2420 wireless communication module
According to base station, by the Internet, mobile subscriber terminal can be checked that detection data are maybe uploaded to cloud storage center by testing result, form inspection
Survey and monitoring network；It is provided with a polyvinyl alcohol-ethylenediamine tetraacetic for dehumidification on the output electric wire sidewall of described garbage disposer
Methene phosphoric acid-polysulfones basement membrane hollow fiber composite membrane assembly, this membrane module is by polyvinyl alcohol-ethylenediamine tetraacetic methene phosphoric acid-polysulfones basement membrane
Hollow fiber composite membrane is fixed in glass electrode, and glass electrode is connected with moisture sensor；Described zinc oxide nanowire 30 length
About 10 μm.
Preferably, the preparation method of described wet sensitive sensing element is as follows:
Step one, prepares Si-NPA substrate: the silicon chip substrate of 3cm × 3cm being included, clean dirt, hydro-thermal method are corroded
Preparation Si-NPA substrate；1. taking the silicon chip of 3cm × 3cm, the mixing that silicon chip is placed in sulphuric acid and hydrogen peroxide volume ratio 4:1 is molten
In liquid, supersound process 20min, taking-up deionized water cleans, to remove the organic impurities of silicon chip surface；Silicon chip is positioned over
Volume ratio is H2O:H2O2: NH4In the mixed solution of OH=5:2:1, ultrasonic cleaning 20min, subsequently take out spend from
Sub-water cleans, to remove Organic substance and the metal complex of silicon chip surface；2. hydro-thermal method corrosion preparation Si-NPA is utilized: weigh 1.0
Fe (the NO of g3)·9H2O pours in politef, is added thereto to 10ml deionized water and the HF of 30ml 40% subsequently
Solution；The silicon chip that upper step is cleaned is put in solution, adds a cover and put in water heating kettle, subsequently water heating kettle is put in drying baker, 180 DEG C
Constant temperature keeps 30min, after natural cooling, takes out Wafer Cleaning and i.e. obtains Si-NPA substrate；
Step 2, growth of zinc oxide nano line: use magnetron sputtering to combine thermal oxidation method and prepare zinc oxide nanowire；By silicon nanometer
Hole post substrate is put in magnetic control sputtering device, under the conditions of sputtering voltage 250V, sputtering current 0.8A, and magnetron sputtering Zn film,
Thickness is 30nm, puts it into subsequently in batch-type furnace, and at 400 DEG C, thermal oxidation method processes 4h, obtains diameter about 30nm's
Zinc oxide nanowire；
Step 3, grows graphene layer: use process for preparing graphenes by chemical vapour deposition；First magnetic on the substrate that upper step obtains
Control sputtering layer of metal Ni film, thickness is about 5nm；Secondly, this substrate is put in tube furnace, is warming up to 900 DEG C, presses
Given pace be passed through hydrogen as protection reducing gas, stablize 30min, then, be passed through methane 2h the most simultaneously,
Temperature fall is started after stopping being passed through methane；Under Ni catalyst action, methane molecule at high temperature can be cracked into carbon atom and hydrogen
Atom, at temperature-fall period and under the protection of hydrogen, carbon atom can formation of deposits one layer graphene thin film；
Step 4, is deposited with interdigital electrode: after obtaining growing the silicon nano hole column substrate having zinc oxide nanowire and Graphene, at lining
Basal surface covers interdigital electrode mask, utilizes magnetron sputtering method to be deposited with Au thin film thick for one layer of 500nm on its surface as electricity
Pole；
Step 5, assembles sensing element and reads data element: the both positive and negative polarity wire reading data element is connected in interdigital electrode,
Two parts composition Zinc oxide-base moisture sensor device；
Wherein, the preparation method of described polyvinyl alcohol-ethylenediamine tetraacetic methene phosphoric acid-polysulfones basement membrane hollow fiber composite membrane assembly is as follows:
Step one, polysulfone hollow fibre basement membrane pretreatment: polysulfone hollow fibre basement membrane pretreatment to be carried out, spend
After ionized water soaks 12h, with the soak with hydrochloric acid 60min of 1.0mol/l, remove glycerin layer and other organic solvents on membrane removal surface；
Then with in the sodium hydroxide solution of 1.0mol/l and the hydrochloric acid of excess, finally repeatedly rinse with deionized water, make film surface in
Property, dry in the shade standby；
Step 2, prepares polyvinyl alcohol-ethylenediamine tetraacetic methene phosphoric acid-polysulfone hollow fibre composite membrane: average by certain mass gathers
Right be 1750 ± 50 polyvinyl alcohol add in deionized water, the most molten to polyvinyl alcohol at 50 DEG C of stirred in water bath about 3h
Solve, obtain 5wt% polyvinyl alcohol homogeneous phase aqueous solution；A certain amount of ethylenediamine tetraacetic methene phosphoric acid is added after solution is cooled to room temperature,
And it being stirred at room temperature 2h, standing and defoaming i.e. obtains casting solution；By the polysulfones basement membrane (molecular cut off 30000) through pretreatment
Take out after casting solution soaks 20min, be vertically fixed on the guide frame that dries in the air and dry in the shade；By the film through primary coating in casting solution again
After soaking 20min, reversely it is fixed on and dries in the air on guide frame, dry at room temperature over night, prepare required PVA-EDTMPA/PS hollow
Composite fiber membrane.
Step 3, fixing: polyvinyl alcohol-ethylenediamine tetraacetic methene phosphoric acid-polysulfone hollow fibre composite membrane is fixed in glass electrode.
Wet sensitive is tested:
Zinc oxide-base moisture sensor is put in control appliance of temperature and humidity.Test temperature is set as 20 DEG C, then controls relatively
Range of humidity variation is 10%～95%, reads the electric capacity of sensing element with humidity situation of change；
The sensitivity definition of dew cell is: CRH-C11/ C11× 100%, wherein CRHFor obtaining under test environment humidity
The component capacitance value arrived, C11Capacitance for 11% time element of relative humidity.Response or the recovery time of dew cell are defined as
Testing capacitor value reaches the time used by total variation 80% at the variable quantity of 11%RH to 75%RH；
When testing frequency and being 100Hz, under the relative humidity of 15%, 35%, 55%, 75%, 95%, sensing element
Sensitivity be respectively 4,35,272,843 and 2171, response and recovery time are respectively 10s and 12s, and test result shows
Showing that this garbage disposer has good wet sensitive performance, highly sensitive, response time is short.
Embodiment 3:
A kind of organic garbage disposal as shown in Figure 1, the outside of described garbage disposer 1 is provided with zno-based moisture sensor
Module 2；Described zno-based moisture sensor module 2 is mainly made up of wet sensitive sensing element and data read element.Such as Fig. 2 institute
Showing, described wet sensitive sensing element is interdigital electrode type, and it includes silicon chip substrate 10, Si-NPA20, zinc oxide nanowire 30 and
Graphene layer 40；Microprocessor, LED display lamp bar and wireless communication module it is additionally provided with on described garbage disposer 1；Described
The input of microprocessor is connected with the outfan of described ZnO moisture sensor module, and described ZnO moisture sensor module is examined
Measured value reaches preset value, and described microprocessor controls LED display lamp bar and flashes, and described LED display lamp bar connects one
Individual buzzer, touches buzzer while the flicker of LED display lamp bar and sends alarm；Described wireless communication module be CC2420 without
Line communication module, described ZnO moisture sensor module can send detection data to number by described CC2420 wireless communication module
According to base station, by the Internet, mobile subscriber terminal can be checked that detection data are maybe uploaded to cloud storage center by testing result, form inspection
Survey and monitoring network；It is provided with a polyvinyl alcohol-ethylenediamine tetraacetic for dehumidification on the output electric wire sidewall of described garbage disposer
Methene phosphoric acid-polysulfones basement membrane hollow fiber composite membrane assembly, this membrane module is by polyvinyl alcohol-ethylenediamine tetraacetic methene phosphoric acid-polysulfones basement membrane
Hollow fiber composite membrane is fixed in glass electrode, and glass electrode is connected with moisture sensor；Described zinc oxide nanowire 30 length
About 5 μm.
Preferably, the preparation method of described wet sensitive sensing element is as follows:
Step one, prepares Si-NPA substrate: the silicon chip substrate of 3cm × 3cm being included, clean dirt, hydro-thermal method are corroded
Preparation Si-NPA substrate；1. taking the silicon chip of 3cm × 3cm, the mixing that silicon chip is placed in sulphuric acid and hydrogen peroxide volume ratio 4:3 is molten
In liquid, supersound process 20min, taking-up deionized water cleans, to remove the organic impurities of silicon chip surface；Silicon chip is positioned over
Volume ratio is H2O:H2O2: NH4In the mixed solution of OH=5:4:1, ultrasonic cleaning 20min, subsequently take out spend from
Sub-water cleans, to remove Organic substance and the metal complex of silicon chip surface；2. hydro-thermal method corrosion preparation Si-NPA is utilized: weigh 1.0
Fe (the NO of g3)·9H2O pours in politef, is added thereto to 20ml deionized water and the HF of 60ml 40% subsequently
Solution；The silicon chip that upper step is cleaned is put in solution, adds a cover and put in water heating kettle, subsequently water heating kettle is put in drying baker, 180 DEG C
Constant temperature keeps 30min, after natural cooling, takes out Wafer Cleaning and i.e. obtains Si-NPA substrate；
Step 2, growth of zinc oxide nano line: use magnetron sputtering to combine thermal oxidation method and prepare zinc oxide nanowire；By silicon nanometer
Hole post substrate is put in magnetic control sputtering device, under the conditions of sputtering voltage 180V, sputtering current 0.8A, and magnetron sputtering Zn film,
Thickness is 50nm, puts it into subsequently in batch-type furnace, and at 400 DEG C, thermal oxidation method processes 2h, obtains diameter about 60nm's
Zinc oxide nanowire；
Step 3, grows graphene layer: use process for preparing graphenes by chemical vapour deposition；First magnetic on the substrate that upper step obtains
Control sputtering layer of metal Ni film, thickness is about 5nm；Secondly, this substrate is put in tube furnace, is warming up to 900 DEG C, presses
Given pace be passed through hydrogen as protection reducing gas, stablize 30min, then, be passed through methane 2h the most simultaneously,
Temperature fall is started after stopping being passed through methane；Under Ni catalyst action, methane molecule at high temperature can be cracked into carbon atom and hydrogen
Atom, at temperature-fall period and under the protection of hydrogen, carbon atom can formation of deposits one layer graphene thin film；
Step 4, is deposited with interdigital electrode: after obtaining growing the silicon nano hole column substrate having zinc oxide nanowire and Graphene, at lining
Basal surface covers interdigital electrode mask, utilizes magnetron sputtering method to be deposited with Au thin film thick for one layer of 500nm on its surface as electricity
Pole；
Step 5, assembles sensing element and reads data element: the both positive and negative polarity wire reading data element is connected in interdigital electrode,
Two parts composition Zinc oxide-base moisture sensor device；
Wherein, the preparation method of described polyvinyl alcohol-ethylenediamine tetraacetic methene phosphoric acid-polysulfones basement membrane hollow fiber composite membrane assembly is as follows:
Step one, polysulfone hollow fibre basement membrane pretreatment: polysulfone hollow fibre basement membrane pretreatment to be carried out, spend
After ionized water soaks 12h, with the soak with hydrochloric acid 60min of 1.0mol/l, remove glycerin layer and other organic solvents on membrane removal surface；
Then with in the sodium hydroxide solution of 1.0mol/l and the hydrochloric acid of excess, finally repeatedly rinse with deionized water, make film surface in
Property, dry in the shade standby；
Step 2, prepares polyvinyl alcohol-ethylenediamine tetraacetic methene phosphoric acid-polysulfone hollow fibre composite membrane: average by certain mass gathers
Right be 1750 ± 50 polyvinyl alcohol add in deionized water, the most molten to polyvinyl alcohol at 50 DEG C of stirred in water bath about 3h
Solve, obtain 5wt% polyvinyl alcohol homogeneous phase aqueous solution；A certain amount of ethylenediamine tetraacetic methene phosphoric acid is added after solution is cooled to room temperature,
And it being stirred at room temperature 1.5h, standing and defoaming i.e. obtains casting solution；By the polysulfones basement membrane (molecular cut off 30000) through pretreatment
Take out after casting solution soaks 20min, be vertically fixed on the guide frame that dries in the air and dry in the shade；By the film through primary coating in casting solution again
After soaking 20min, reversely it is fixed on and dries in the air on guide frame, dry at room temperature over night, prepare required PVA-EDTMPA/PS hollow
Composite fiber membrane.
Step 3, fixing: polyvinyl alcohol-ethylenediamine tetraacetic methene phosphoric acid-polysulfone hollow fibre composite membrane is fixed in glass electrode.
Wet sensitive is tested:
Zinc oxide-base moisture sensor is put in control appliance of temperature and humidity.Test temperature is set as 20 DEG C, then controls relatively
Range of humidity variation is 10%～95%, reads the electric capacity of sensing element with humidity situation of change；
The sensitivity definition of dew cell is: CRH-C11/ C11× 100%, wherein CRHFor obtaining under test environment humidity
The component capacitance value arrived, C11Capacitance for 11% time element of relative humidity.Response or the recovery time of dew cell are defined as
Testing capacitor value reaches the time used by total variation 80% at the variable quantity of 11%RH to 75%RH；
When testing frequency and being 100Hz, under the relative humidity of 15%, 35%, 55%, 75%, 95%, sensing element
Sensitivity be respectively 4,68,138,753 and 1952, response and recovery time are respectively 12s and 13s, and test result shows
Showing that this garbage disposer has good wet sensitive performance, highly sensitive, response time is short.
Embodiment 4
A kind of organic garbage disposal as shown in Figure 1, the outside of described garbage disposer 1 is provided with zno-based moisture sensor
Module 2；Described zno-based moisture sensor module 2 is mainly made up of wet sensitive sensing element and data read element.Such as Fig. 2 institute
Showing, described wet sensitive sensing element is interdigital electrode type, and it includes silicon chip substrate 10, Si-NPA20, zinc oxide nanowire 30 and
Graphene layer 40；Microprocessor, LED display lamp bar and wireless communication module it is additionally provided with on described garbage disposer 1；Described
The input of microprocessor is connected with the outfan of described ZnO moisture sensor module, and described ZnO moisture sensor module is examined
Measured value reaches preset value, and described microprocessor controls LED display lamp bar and flashes, and described LED display lamp bar connects one
Individual buzzer, touches buzzer while the flicker of LED display lamp bar and sends alarm；Described wireless communication module be CC2420 without
Line communication module, described ZnO moisture sensor module can send detection data to number by described CC2420 wireless communication module
According to base station, by the Internet, mobile subscriber terminal can be checked that detection data are maybe uploaded to cloud storage center by testing result, form inspection
Survey and monitoring network；It is provided with a polyvinyl alcohol-ethylenediamine tetraacetic for dehumidification on the output electric wire sidewall of described garbage disposer
Methene phosphoric acid-polysulfones basement membrane hollow fiber composite membrane assembly, this membrane module is by polyvinyl alcohol-ethylenediamine tetraacetic methene phosphoric acid-polysulfones basement membrane
Hollow fiber composite membrane is fixed in glass electrode, and glass electrode is connected with moisture sensor；Described zinc oxide nanowire 30 length
About 5 μm.
Preferably, the preparation method of described wet sensitive sensing element is as follows:
Step one, prepares Si-NPA substrate: the silicon chip substrate of 3cm × 3cm being included, clean dirt, hydro-thermal method are corroded
Preparation Si-NPA substrate；1. taking the silicon chip of 3cm × 3cm, the mixing that silicon chip is placed in sulphuric acid and hydrogen peroxide volume ratio 4:1 is molten
In liquid, supersound process 20min, taking-up deionized water cleans, to remove the organic impurities of silicon chip surface；Silicon chip is positioned over
Volume ratio is H2O:H2O2: NH4In the mixed solution of OH=5:2:1, ultrasonic cleaning 20min, subsequently take out spend from
Sub-water cleans, to remove Organic substance and the metal complex of silicon chip surface；2. hydro-thermal method corrosion preparation Si-NPA is utilized: weigh 1.0
Fe (the NO of g3)·9H2O pours in politef, is added thereto to 20ml deionized water and the HF of 30ml 40% subsequently
Solution；The silicon chip that upper step is cleaned is put in solution, adds a cover and put in water heating kettle, subsequently water heating kettle is put in drying baker, 180 DEG C
Constant temperature keeps 30min, after natural cooling, takes out Wafer Cleaning and i.e. obtains Si-NPA substrate；
Step 2, growth of zinc oxide nano line: use magnetron sputtering to combine thermal oxidation method and prepare zinc oxide nanowire；By silicon nanometer
Hole post substrate is put in magnetic control sputtering device, under the conditions of sputtering voltage 330V, sputtering current 1.9A, and magnetron sputtering Zn film,
Thickness is 50nm, puts it into subsequently in batch-type furnace, and at 400 DEG C, thermal oxidation method processes 4h, obtains diameter about 30nm's
Zinc oxide nanowire；
Step 3, grows graphene layer: use process for preparing graphenes by chemical vapour deposition；First magnetic on the substrate that upper step obtains
Control sputtering layer of metal Ni film, thickness is about 9nm；Secondly, this substrate is put in tube furnace, is warming up to 900 DEG C, presses
Given pace be passed through hydrogen as protection reducing gas, stablize 30min, then, be passed through methane 2h the most simultaneously,
Temperature fall is started after stopping being passed through methane；Under Ni catalyst action, methane molecule at high temperature can be cracked into carbon atom and hydrogen
Atom, at temperature-fall period and under the protection of hydrogen, carbon atom can formation of deposits one layer graphene thin film；
Step 4, is deposited with interdigital electrode: after obtaining growing the silicon nano hole column substrate having zinc oxide nanowire and Graphene, at lining
Basal surface covers interdigital electrode mask, utilizes magnetron sputtering method to be deposited with Au thin film thick for one layer of 500nm on its surface as electricity
Pole；
Step 5, assembles sensing element and reads data element: the both positive and negative polarity wire reading data element is connected in interdigital electrode,
Two parts composition Zinc oxide-base moisture sensor device；
Wherein, the preparation method of described polyvinyl alcohol-ethylenediamine tetraacetic methene phosphoric acid-polysulfones basement membrane hollow fiber composite membrane assembly is as follows:
Step one, polysulfone hollow fibre basement membrane pretreatment: polysulfone hollow fibre basement membrane pretreatment to be carried out, spend
After ionized water soaks 12h, with the soak with hydrochloric acid 60min of 1.0mol/l, remove glycerin layer and other organic solvents on membrane removal surface；
Then with in the sodium hydroxide solution of 1.0mol/l and the hydrochloric acid of excess, finally repeatedly rinse with deionized water, make film surface in
Property, dry in the shade standby；
Step 2, prepares polyvinyl alcohol-ethylenediamine tetraacetic methene phosphoric acid-polysulfone hollow fibre composite membrane: average by certain mass gathers
Right be 1750 ± 50 polyvinyl alcohol add in deionized water, the most molten to polyvinyl alcohol at 50 DEG C of stirred in water bath about 3h
Solve, obtain 5wt% polyvinyl alcohol homogeneous phase aqueous solution；A certain amount of ethylenediamine tetraacetic methene phosphoric acid is added after solution is cooled to room temperature,
And it being stirred at room temperature 1.5h, standing and defoaming i.e. obtains casting solution；By the polysulfones basement membrane (molecular cut off 30000) through pretreatment
Take out after casting solution soaks 20min, be vertically fixed on the guide frame that dries in the air and dry in the shade；By the film through primary coating in casting solution again
After soaking 20min, reversely it is fixed on and dries in the air on guide frame, dry at room temperature over night, prepare required PVA-EDTMPA/PS hollow
Composite fiber membrane.
Step 3, fixing: polyvinyl alcohol-ethylenediamine tetraacetic methene phosphoric acid-polysulfone hollow fibre composite membrane is fixed in glass electrode.
Wet sensitive is tested:
Zinc oxide-base moisture sensor is put in control appliance of temperature and humidity.Test temperature is set as 20 DEG C, then controls relatively
Range of humidity variation is 10%～95%, reads the electric capacity of sensing element with humidity situation of change；
The sensitivity definition of dew cell is: CRH-C11/ C11× 100%, wherein CRHFor obtaining under test environment humidity
The component capacitance value arrived, C11Capacitance for 11% time element of relative humidity.Response or the recovery time of dew cell are defined as
Testing capacitor value reaches the time used by total variation 80% at the variable quantity of 11%RH to 75%RH；
When testing frequency and being 100Hz, under the relative humidity of 15%, 35%, 55%, 75%, 95%, sensing element
Sensitivity be respectively 4,28,428,878 and 1732, response and recovery time are respectively 16s and 18s, and test result shows
Showing that this garbage disposer has good wet sensitive performance, highly sensitive, response time is short.
Embodiment 5
A kind of organic garbage disposal as shown in Figure 1, the outside of described garbage disposer 1 is provided with zno-based moisture sensor
Module 2；Described zno-based moisture sensor module 2 is mainly made up of wet sensitive sensing element and data read element.Such as Fig. 2 institute
Showing, described wet sensitive sensing element is interdigital electrode type, and it includes silicon chip substrate 10, Si-NPA20, zinc oxide nanowire 30 and
Graphene layer 40；Microprocessor, LED display lamp bar and wireless communication module it is additionally provided with on described garbage disposer 1；Described
The input of microprocessor is connected with the outfan of described ZnO moisture sensor module, and described ZnO moisture sensor module is examined
Measured value reaches preset value, and described microprocessor controls LED display lamp bar and flashes, and described LED display lamp bar connects one
Individual buzzer, touches buzzer while the flicker of LED display lamp bar and sends alarm；Described wireless communication module be CC2420 without
Line communication module, described ZnO moisture sensor module can send detection data to number by described CC2420 wireless communication module
According to base station, by the Internet, mobile subscriber terminal can be checked that detection data are maybe uploaded to cloud storage center by testing result, form inspection
Survey and monitoring network；It is provided with a polyvinyl alcohol-ethylenediamine tetraacetic for dehumidification on the output electric wire sidewall of described garbage disposer
Methene phosphoric acid-polysulfones basement membrane hollow fiber composite membrane assembly, this membrane module is by polyvinyl alcohol-ethylenediamine tetraacetic methene phosphoric acid-polysulfones basement membrane
Hollow fiber composite membrane is fixed in glass electrode, and glass electrode is connected with moisture sensor；Described zinc oxide nanowire 30 length
About 5 μm.
Preferably, the preparation method of described wet sensitive sensing element is as follows:
Step one, prepares Si-NPA substrate: the silicon chip substrate of 3cm × 3cm being included, clean dirt, hydro-thermal method are corroded
Preparation Si-NPA substrate；1. taking the silicon chip of 3cm × 3cm, the mixing that silicon chip is placed in sulphuric acid and hydrogen peroxide volume ratio 4:1 is molten
In liquid, supersound process 20min, taking-up deionized water cleans, to remove the organic impurities of silicon chip surface；Silicon chip is positioned over
Volume ratio is H2O:H2O2: NH4In the mixed solution of OH=5:2:1, ultrasonic cleaning 20min, subsequently take out spend from
Sub-water cleans, to remove Organic substance and the metal complex of silicon chip surface；2. hydro-thermal method corrosion preparation Si-NPA is utilized: weigh 1.0
Fe (the NO of g3)·9H2O pours in politef, is added thereto to 20ml deionized water and the HF of 30ml 60% subsequently
Solution；The silicon chip that upper step is cleaned is put in solution, adds a cover and put in water heating kettle, subsequently water heating kettle is put in drying baker, 180 DEG C
Constant temperature keeps 30min, after natural cooling, takes out Wafer Cleaning and i.e. obtains Si-NPA substrate；
Step 2, growth of zinc oxide nano line: use magnetron sputtering to combine thermal oxidation method and prepare zinc oxide nanowire；By silicon nanometer
Hole post substrate is put in magnetic control sputtering device, under the conditions of sputtering voltage 220V, sputtering current 0.8A, and magnetron sputtering Zn film,
Thickness is 50nm, puts it into subsequently in batch-type furnace, and at 380 DEG C, thermal oxidation method processes 5h, obtains diameter about 30nm's
Zinc oxide nanowire；
Step 3, grows graphene layer: use process for preparing graphenes by chemical vapour deposition；First magnetic on the substrate that upper step obtains
Control sputtering layer of metal Ni film, thickness is about 5nm；Secondly, this substrate is put in tube furnace, is warming up to 700 DEG C, presses
Given pace be passed through hydrogen as protection reducing gas, stablize 30min, then, be passed through methane 2h the most simultaneously,
Temperature fall is started after stopping being passed through methane；Under Ni catalyst action, methane molecule at high temperature can be cracked into carbon atom and hydrogen
Atom, at temperature-fall period and under the protection of hydrogen, carbon atom can formation of deposits one layer graphene thin film；
Step 4, is deposited with interdigital electrode: after obtaining growing the silicon nano hole column substrate having zinc oxide nanowire and Graphene, at lining
Basal surface covers interdigital electrode mask, utilizes magnetron sputtering method to be deposited with Au thin film thick for one layer of 500nm on its surface as electricity
Pole；
Step 5, assembles sensing element and reads data element: the both positive and negative polarity wire reading data element is connected in interdigital electrode,
Two parts composition Zinc oxide-base moisture sensor device；
Wherein, the preparation method of described polyvinyl alcohol-ethylenediamine tetraacetic methene phosphoric acid-polysulfones basement membrane hollow fiber composite membrane assembly is as follows:
Step one, polysulfone hollow fibre basement membrane pretreatment: polysulfone hollow fibre basement membrane pretreatment to be carried out, spend
After ionized water soaks 12h, with the soak with hydrochloric acid 60min of 1.5mol/l, remove glycerin layer and other organic solvents on membrane removal surface；
Then with in the sodium hydroxide solution of 1.0mol/l and the hydrochloric acid of excess, finally repeatedly rinse with deionized water, make film surface in
Property, dry in the shade standby；
Step 2, prepares polyvinyl alcohol-ethylenediamine tetraacetic methene phosphoric acid-polysulfone hollow fibre composite membrane: average by certain mass gathers
Right be 1750 ± 50 polyvinyl alcohol add in deionized water, the most molten to polyvinyl alcohol at 50 DEG C of stirred in water bath about 3h
Solve, obtain 5wt% polyvinyl alcohol homogeneous phase aqueous solution；A certain amount of ethylenediamine tetraacetic methene phosphoric acid is added after solution is cooled to room temperature,
And it being stirred at room temperature 1.5h, standing and defoaming i.e. obtains casting solution；By the polysulfones basement membrane (molecular cut off 30000) through pretreatment
Take out after casting solution soaks 20min, be vertically fixed on the guide frame that dries in the air and dry in the shade；By the film through primary coating in casting solution again
After soaking 20min, reversely it is fixed on and dries in the air on guide frame, dry at room temperature over night, prepare required PVA-EDTMPA/PS hollow
Composite fiber membrane.
Step 3, fixing: polyvinyl alcohol-ethylenediamine tetraacetic methene phosphoric acid-polysulfone hollow fibre composite membrane is fixed in glass electrode.
Wet sensitive is tested:
Zinc oxide-base moisture sensor is put in control appliance of temperature and humidity.Test temperature is set as 20 DEG C, then controls relatively
Range of humidity variation is 10%～95%, reads the electric capacity of sensing element with humidity situation of change；
The sensitivity definition of dew cell is: CRH-C11/ C11× 100%, wherein CRHFor obtaining under test environment humidity
The component capacitance value arrived, C11Capacitance for 11% time element of relative humidity.Response or the recovery time of dew cell are defined as
Testing capacitor value reaches the time used by total variation 80% at the variable quantity of 11%RH to 75%RH；
When testing frequency and being 100Hz, under the relative humidity of 15%, 35%, 55%, 75%, 95%, sensing element
Sensitivity be respectively 4,21,433,588 and 1932, response and recovery time are respectively 15s and 17s, and test result shows
Showing that this garbage disposer has good wet sensitive performance, highly sensitive, response time is short.
Last it should be noted that, above example is only in order to illustrate technical scheme, rather than to scope
Restriction, although having made to explain to the present invention with reference to preferred embodiment, it will be understood by those within the art that,
Technical scheme can be modified or equivalent, without deviating from the spirit and scope of technical solution of the present invention.
Claims (2)
1. an organic garbage disposal, it is characterised in that: the outside of described garbage disposer (1) is provided with zno-based wet sensitive
Sensor assembly (2)；Described zno-based moisture sensor module (2) is main by wet sensitive sensing element and data read element group
Becoming, described wet sensitive sensing element is interdigital electrode type, including silicon chip substrate (10), Si NPA (20), zinc oxide nanowire (30)
With graphene layer (40)；Microprocessor, LED display lamp bar and radio communication mold it is additionally provided with on described garbage disposer (1)
Block；The input of described microprocessor is connected with the outfan of described ZnO moisture sensor module (2), described ZnO wet sensitive
Sensor assembly (2) detected value reaches preset value, and described microprocessor controls LED display lamp bar and flashes, and described LED shows
Show that the connection of lamp bar has a buzzer, touch buzzer while the flicker of LED display lamp bar and send alarm；Described radio communication mold
Block is CC2420 wireless communication module, and described ZnO moisture sensor module (2) can be by described CC2420 radio communication mold
By the Internet, block sends detection data can check that detection data are maybe uploaded to by testing result to data basestation, mobile subscriber terminal
Cloud storage center, forms detection and monitoring network；Be provided with on the output electric wire sidewall of described garbage disposer (1) one for
The polyvinyl alcohol ethylenediamine tetraacetic methene phosphoric acid polysulfones basement membrane hollow fiber composite membrane assembly of dehumidification, this membrane module is by polyvinyl alcohol second
Diamidogen four methene phosphoric acid polysulfones basement membrane hollow fiber composite membrane is fixed in glass electrode, and glass electrode is connected with moisture sensor；
Described zinc oxide nanowire (30) length about 13 μm.
Garbage disposer the most according to claim 1, it is characterised in that the preparation method of described wet sensitive sensing element is as follows:
Step one, prepares Si NPA substrate: the silicon chip substrate (10) of 3cm × 3cm is included clean dirt, hydro-thermal method
Corrosion preparation Si NPA substrate；1. take the silicon chip of 3cm × 3cm, silicon chip is placed in the mixed of sulphuric acid and hydrogen peroxide volume ratio 4:1
Closing in solution, supersound process 20min, taking-up deionized water cleans, to remove the organic impurities of silicon chip surface；Silicon chip is put
Being placed in volume ratio is H2O:H2O2: NH4In the mixed solution of OH=5:2:1, ultrasonic cleaning 20min, takes out subsequently and spends
Ionized water cleans, to remove Organic substance and the metal complex of silicon chip surface；2. hydro-thermal method corrosion preparation Si NPA is utilized: weigh
Fe (the NO of 1.0g3)·9H2O pours in politef, is added thereto to 20ml deionized water and 30ml 40% subsequently
HF solution；The silicon chip that upper step is cleaned is put in solution, adds a cover and put in water heating kettle, subsequently water heating kettle is put in drying baker,
180 DEG C of constant temperature keep 30min, after natural cooling, take out Wafer Cleaning and i.e. obtain Si NPA substrate；
Step 2, growth of zinc oxide nano line: use magnetron sputtering to combine thermal oxidation method and prepare zinc oxide nanowire；By silicon nanometer
Hole post substrate is put in magnetic control sputtering device, under the conditions of sputtering voltage 220V, sputtering current 0.8A, magnetron sputtering Zn film is thick
Degree is 50nm, puts it into subsequently in batch-type furnace, and at 400 DEG C, thermal oxidation method processes 4h, obtains diameter about 30nm's
Zinc oxide nanowire；
Step 3, grows graphene layer: use process for preparing graphenes by chemical vapour deposition；First magnetic on the substrate that upper step obtains
Control sputtering layer of metal Ni film, thickness is about 5nm；Secondly, this substrate is put in tube furnace, is warming up to 900 DEG C, presses
Given pace be passed through hydrogen as protection reducing gas, stablize 30min, then, be passed through methane 2h the most simultaneously,
Temperature fall is started after stopping being passed through methane；Under Ni catalyst action, methane molecule at high temperature can be cracked into carbon atom and hydrogen
Atom, at temperature-fall period and under the protection of hydrogen, carbon atom can formation of deposits one layer graphene thin film；
Step 4, is deposited with interdigital electrode: after obtaining growing the silicon nano hole column substrate having zinc oxide nanowire and Graphene, at lining
Basal surface covers interdigital electrode mask, utilizes magnetron sputtering method to be deposited with Au thin film thick for one layer of 500nm on its surface as electricity
Pole；
Step 5, assembles sensing element and reads data element: the both positive and negative polarity wire reading data element is connected in interdigital electrode,
Two parts composition Zinc oxide-base moisture sensor device；
The preparation method of described polyvinyl alcohol-ethylenediamine tetraacetic methene phosphoric acid-polysulfones basement membrane hollow fiber composite membrane assembly is as follows:
Step one, polysulfone hollow fibre basement membrane pretreatment: polysulfone hollow fibre basement membrane pretreatment to be carried out, spend
After ionized water soaks 12h, with the soak with hydrochloric acid 60min of 1.0mol/l, remove glycerin layer and other organic solvents on membrane removal surface；
Then with in the sodium hydroxide solution of 1.0mol/l and the hydrochloric acid of excess, finally repeatedly rinse with deionized water, make film surface in
Property, dry in the shade standby；
Step 2, prepares polyvinyl alcohol-ethylenediamine tetraacetic methene phosphoric acid-polysulfone hollow fibre composite membrane: average by certain mass gathers
Right be 1750 ± 50 polyvinyl alcohol add in deionized water, the most molten to polyvinyl alcohol at 50 DEG C of stirred in water bath about 3h
Solve, obtain 5wt% polyvinyl alcohol homogeneous phase aqueous solution；A certain amount of ethylenediamine tetraacetic methene phosphoric acid is added after solution is cooled to room temperature,
And it being stirred at room temperature 1.5h, standing and defoaming i.e. obtains casting solution；By the polysulfones basement membrane (molecular cut off 30000) through pretreatment
Take out after casting solution soaks 20min, be vertically fixed on the guide frame that dries in the air and dry in the shade；By the film through primary coating in casting solution again
After soaking 20min, reversely it is fixed on and dries in the air on guide frame, dry at room temperature over night, prepare required PVA-EDTMPA/PS hollow
Composite fiber membrane.
Step 3, fixing: polyvinyl alcohol-ethylenediamine tetraacetic methene phosphoric acid-polysulfone hollow fibre composite membrane is fixed in glass electrode.
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101259381A (en) * | 2007-12-19 | 2008-09-10 | 天津大学 | Hollow fiber compound film, preparation and application |
| WO2015085537A1 (en) * | 2013-12-12 | 2015-06-18 | 中国科学院微电子研究所 | Sensor module based on flexible substrate |
| CN204789450U (en) * | 2015-07-16 | 2015-11-18 | 吕银兰 | Humidity detection alarm device based on zigbee |
-
2016
- 2016-01-29 CN CN201610067497.8A patent/CN105738428A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101259381A (en) * | 2007-12-19 | 2008-09-10 | 天津大学 | Hollow fiber compound film, preparation and application |
| WO2015085537A1 (en) * | 2013-12-12 | 2015-06-18 | 中国科学院微电子研究所 | Sensor module based on flexible substrate |
| CN204789450U (en) * | 2015-07-16 | 2015-11-18 | 吕银兰 | Humidity detection alarm device based on zigbee |
Non-Patent Citations (1)
| Title |
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| 王文闯: "ZnO基传感器的气敏和湿敏特性研究", 《中国博士学位论文全文数据库信息科技辑》 * |
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Application publication date: 20160706 |
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